JP2020017639A - 配線基板 - Google Patents
配線基板 Download PDFInfo
- Publication number
- JP2020017639A JP2020017639A JP2018139884A JP2018139884A JP2020017639A JP 2020017639 A JP2020017639 A JP 2020017639A JP 2018139884 A JP2018139884 A JP 2018139884A JP 2018139884 A JP2018139884 A JP 2018139884A JP 2020017639 A JP2020017639 A JP 2020017639A
- Authority
- JP
- Japan
- Prior art keywords
- hole conductor
- conductor
- land
- wiring board
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 86
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 64
- 239000012792 core layer Substances 0.000 description 34
- 238000007747 plating Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012779 reinforcing material Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 229910052570 clay Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0263—Details about a collection of particles
- H05K2201/0269—Non-uniform distribution or concentration of particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/096—Vertically aligned vias, holes or stacked vias
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
11 コア層
12 スルーホール導体
13 絶縁層
14 ビアホール導体
14a ビア底
14b ビア本体
15 ビアランド
Claims (5)
- 複数の絶縁層と、
絶縁層の表面に形成されており、ビアランドを含む配線導体層と、
絶縁層の上面から下面まで貫通するビアホールと、
ビアホールに充填されたビアホール導体と、
を含み、
ビアホール導体のビア底が、ビアランドと接触しており、
ビア底を形成している結晶粒子が、ビアホール導体のビア底以外の部分およびビアランドを形成している結晶粒子よりも小さいことを特徴とする配線基板。 - 前記ビア底を形成している結晶粒子の平均粒子径が、前記ビアホール導体のビア底以外の部分および前記ビアランドを形成している結晶粒子の平均粒子径を100とした場合の相対値で1〜20である請求項1に記載の配線基板。
- 前記ビア底の厚みが、前記ビアホール導体の高さを100とした場合の相対値で0.1〜10である請求項1または2に記載の配線基板。
- 前記ビア底を形成している結晶粒子が、前記ビア底から前記ビアホール導体の高さ方向に向かって、前記ビアホール導体の外周部の一部も形成している請求項1〜3のいずれかに記載の配線基板。
- 前記ビア底を形成している結晶粒子で形成されている外周部の高さが、前記ビアホール導体の高さを100とした場合の相対値で20以下である請求項4に記載の配線基板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018139884A JP7097139B2 (ja) | 2018-07-26 | 2018-07-26 | 配線基板 |
US16/522,302 US11322417B2 (en) | 2018-07-26 | 2019-07-25 | Wiring board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018139884A JP7097139B2 (ja) | 2018-07-26 | 2018-07-26 | 配線基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020017639A true JP2020017639A (ja) | 2020-01-30 |
JP7097139B2 JP7097139B2 (ja) | 2022-07-07 |
Family
ID=69177473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018139884A Active JP7097139B2 (ja) | 2018-07-26 | 2018-07-26 | 配線基板 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11322417B2 (ja) |
JP (1) | JP7097139B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024024878A1 (ja) * | 2022-07-27 | 2024-02-01 | 京セラ株式会社 | 配線基板およびそれを用いた実装構造体 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7219598B2 (ja) * | 2018-11-27 | 2023-02-08 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
US11398419B2 (en) * | 2020-07-16 | 2022-07-26 | Advanced Semiconductor Engineering, Inc. | Wiring structure and method for manufacturing the same |
US20220148954A1 (en) * | 2020-11-06 | 2022-05-12 | Advanced Semiconductor Engineering, Inc. | Wiring structure and method for manufacturing the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004128177A (ja) * | 2002-10-02 | 2004-04-22 | Hitachi Cable Ltd | 配線板の製造方法及び配線板、ならびに半導体装置 |
JP2006114787A (ja) * | 2004-10-15 | 2006-04-27 | Sumitomo Bakelite Co Ltd | 回路基板の製造方法 |
WO2008120755A1 (ja) * | 2007-03-30 | 2008-10-09 | Nec Corporation | 機能素子内蔵回路基板及びその製造方法、並びに電子機器 |
JP2010153628A (ja) * | 2008-12-25 | 2010-07-08 | Hitachi Chem Co Ltd | 多層配線基板の製造方法 |
JP2017073520A (ja) * | 2015-10-09 | 2017-04-13 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3819670B2 (ja) * | 2000-04-14 | 2006-09-13 | 富士通株式会社 | ダマシン配線を有する半導体装置 |
JP3851768B2 (ja) | 2000-10-24 | 2006-11-29 | 日本特殊陶業株式会社 | 配線基板及び配線基板の製造方法 |
DE102014115105B4 (de) * | 2014-10-09 | 2023-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Halbleitereinrichtung und Verfahren zur Herstellung einer Halbleitereinrichtung |
-
2018
- 2018-07-26 JP JP2018139884A patent/JP7097139B2/ja active Active
-
2019
- 2019-07-25 US US16/522,302 patent/US11322417B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004128177A (ja) * | 2002-10-02 | 2004-04-22 | Hitachi Cable Ltd | 配線板の製造方法及び配線板、ならびに半導体装置 |
JP2006114787A (ja) * | 2004-10-15 | 2006-04-27 | Sumitomo Bakelite Co Ltd | 回路基板の製造方法 |
WO2008120755A1 (ja) * | 2007-03-30 | 2008-10-09 | Nec Corporation | 機能素子内蔵回路基板及びその製造方法、並びに電子機器 |
JP2010153628A (ja) * | 2008-12-25 | 2010-07-08 | Hitachi Chem Co Ltd | 多層配線基板の製造方法 |
JP2017073520A (ja) * | 2015-10-09 | 2017-04-13 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024024878A1 (ja) * | 2022-07-27 | 2024-02-01 | 京セラ株式会社 | 配線基板およびそれを用いた実装構造体 |
Also Published As
Publication number | Publication date |
---|---|
JP7097139B2 (ja) | 2022-07-07 |
US11322417B2 (en) | 2022-05-03 |
US20200035575A1 (en) | 2020-01-30 |
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