JP2019530222A - 方向性イオンを使用したパターンフィーチャの形成技法 - Google Patents
方向性イオンを使用したパターンフィーチャの形成技法 Download PDFInfo
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- 150000002500 ions Chemical class 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 53
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 2
- UBMXAAKAFOKSPA-UHFFFAOYSA-N [N].[O].[Si] Chemical compound [N].[O].[Si] UBMXAAKAFOKSPA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- -1 ion ion Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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Abstract
Description
本出願は、「方向性イオンを使用したパターンフィーチャの形成技法」と題する、2016年9月22日に出願された米国仮特許出願第62/398032号に対する優先権を主張し、これは参照によりその全体が本明細書に組み込まれる。
Claims (15)
- 基板のパターニング方法であって:
第1の表面フィーチャおよび第2の表面フィーチャを、前記基板上に配置された層内に千鳥配置で設けるステップと;
反応種を含む反応性雰囲気の存在下で、第1の露光において第1のイオンを前記第1の表面フィーチャの第1の側面および前記第2の表面フィーチャの第1の側面に向けるステップと;を含み、
前記第1の露光が、前記第1の表面フィーチャの前記第1の側面および前記第2の表面フィーチャの前記第1の側面をエッチングし、当該イオンを向けた後、前記第1の表面フィーチャおよび前記第2の表面フィーチャが併合して第3の表面フィーチャを形成する、方法。 - 前記第3の表面フィーチャが:L字型、大文字のT字型、小文字のt字型、ジグザグ形状、および階段形状のうちの1つによって特徴付けられる形状を有する、請求項1に記載の方法。
- 前記第3の表面フィーチャが前記層内の凹部である、請求項1に記載の方法。
- 前記基板が基板平面を含み、前記第1の表面フィーチャの少なくとも一端が、前記第2の表面フィーチャの少なくとも一端に対して第1の軸に沿ってオフセットしている、請求項1に記載の方法。
- 前記基板が基板平面を含み、前記第1の表面フィーチャの前記第1の側面および前記第2の表面フィーチャの前記第1の側面が、前記第1の軸と平行に延びている、請求項4に記載の方法。
- 前記第1のイオンがイオン軌道を含み、前記基板平面内における前記イオン軌道の投影が、前記第1の軸に対して垂直である、前記基板平面内における第2の軸と平行である、請求項4に記載の方法。
- 前記基板が第1の材料を含み、前記層が第2の材料を含み、前記イオンおよび前記反応種が、前記基板の前記第1の材料に対して前記層の前記第2の材料を選択的にエッチングし、前記第1の材料の第1のエッチング速度は、前記第2の材料の第2のエッチング速度よりも大きい、請求項1に記載の方法。
- 前記基板が基板平面を含み、当該方法が;
前記基板平面の垂直線を中心に前記基板を約180度回転させるステップと;
前記反応種を含む前記反応性雰囲気の存在下で、第2の露光において第2のイオンを前記第1の表面フィーチャの第2の側面および前記第2の表面フィーチャの第2の側面に向けるステップと;をさらに含み、
前記第1の露光および前記第2の露光の組合せが、前記第3の表面フィーチャを形成する、請求項1に記載の方法。 - 基板上に配置された層のパターニング方法であって:
第1の表面フィーチャおよび第2の表面フィーチャを前記層内に千鳥配置で設けるステップと;
前記第1の表面フィーチャおよび前記第2の表面フィーチャを露光にさらすステップと、を含み、前記露光は:
反応種を含む反応性雰囲気の存在下で、第1のイオンを前記第1の表面フィーチャの第1の側面および前記第2の表面フィーチャの第1の側面に向けることと;
同時に、第2のイオンを前記第1の表面フィーチャの第2の側面および前記第2の表面フィーチャの第2の側面に向けることと、を含み、
前記露光は、前記第1の表面フィーチャの前記第1の側面および前記第2の表面フィーチャの前記第1の側面をエッチングし、かつ前記第1の表面フィーチャの前記第2の側面および前記第2の表面フィーチャの前記第2の側面をエッチングし、
前記イオンを向けた後、前記第1の表面フィーチャおよび前記第2の表面フィーチャが併合して第3の表面フィーチャを形成する、方法。 - 前記基板が基板平面を含み、前記第1の表面フィーチャの少なくとも一端が、前記第2の表面フィーチャの少なくとも一端に対して第1の軸に沿ってオフセットしている、請求項9に記載の方法。
- 前記基板が基板平面を含み、前記第1の表面フィーチャの前記第1の側面および前記第2の側面ならびに前記第2の表面フィーチャの前記第1の側面および前記第2の側面が、前記第1の軸と平行に延びている、請求項10に記載の方法。
- 前記第1のイオンが第1のリボンビームを形成し、前記第2のイオンが第2のリボンビームを形成し、前記第1のイオンおよび前記第2のイオンが前記第1の軸と平行な長軸を有する、請求項10に記載の方法。
- 前記露光の間に、前記第1の軸に対して垂直に延びる第2の軸に沿って前記基板を走査するステップをさらに含む、請求項12に記載の方法。
- デバイス構造の形成方法であって:
第1の表面フィーチャおよび第2の表面フィーチャを、基板上に配置された第1の層内に千鳥配置で設けるステップと;
反応種を含む反応性雰囲気の存在下で、露光において第1のイオンを前記第1の表面フィーチャの第1の側面および前記第2の表面フィーチャの第1の側面に向けるステップであって、
前記露光が、前記第1の表面フィーチャおよび前記第2の表面フィーチャの前記第1の側面をエッチングし、前記イオンを向けた後、前記第1の表面フィーチャおよび前記第2の表面フィーチャが併合して、凹部を含む第3の表面フィーチャを形成するステップと;
前記第3の表面フィーチャを導電性材料で充填するステップと;を含む、方法。 - 前記基板が基板平面を含み、前記第1の表面フィーチャの少なくとも一端が、前記第2の表面フィーチャの少なくとも一端に対して第1の軸に沿ってオフセットしている、請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662398032P | 2016-09-22 | 2016-09-22 | |
US62/398,032 | 2016-09-22 | ||
US15/384,496 US10229832B2 (en) | 2016-09-22 | 2016-12-20 | Techniques for forming patterned features using directional ions |
US15/384,496 | 2016-12-20 | ||
PCT/US2017/050958 WO2018057327A1 (en) | 2016-09-22 | 2017-09-11 | Techniques for forming patterned features using directional ions |
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JP2019530222A true JP2019530222A (ja) | 2019-10-17 |
JP2019530222A5 JP2019530222A5 (ja) | 2020-05-28 |
JP6889773B2 JP6889773B2 (ja) | 2021-06-18 |
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US10229832B2 (en) | 2019-03-12 |
JP6889773B2 (ja) | 2021-06-18 |
CN109791874A (zh) | 2019-05-21 |
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