JP2019216230A - Electrostatic chuck system, deposition apparatus, attraction method, deposition method, and manufacturing method for electronic device - Google Patents

Electrostatic chuck system, deposition apparatus, attraction method, deposition method, and manufacturing method for electronic device Download PDF

Info

Publication number
JP2019216230A
JP2019216230A JP2018221716A JP2018221716A JP2019216230A JP 2019216230 A JP2019216230 A JP 2019216230A JP 2018221716 A JP2018221716 A JP 2018221716A JP 2018221716 A JP2018221716 A JP 2018221716A JP 2019216230 A JP2019216230 A JP 2019216230A
Authority
JP
Japan
Prior art keywords
potential difference
electrostatic chuck
substrate
electrode
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018221716A
Other languages
Japanese (ja)
Other versions
JP7278541B2 (en
JP2019216230A5 (en
Inventor
一史 柏倉
Kazufumi Kashiwakura
一史 柏倉
石井　博
Hiroshi Ishii
石井　　博
映之 細谷
Akiyuki Hosoya
映之 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AOI Co Ltd
Canon Tokki Corp
Original Assignee
AOI Co Ltd
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AOI Co Ltd, Canon Tokki Corp filed Critical AOI Co Ltd
Publication of JP2019216230A publication Critical patent/JP2019216230A/en
Publication of JP2019216230A5 publication Critical patent/JP2019216230A5/ja
Application granted granted Critical
Publication of JP7278541B2 publication Critical patent/JP7278541B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

To make an electrostatic chuck favorably attract an object to be attracted such as a substrate or a mask.SOLUTION: An electrostatic chuck system for attracting an object to be attracted includes: an electrostatic chuck including an electrode unit; a potential difference application unit for applying a potential difference to the electrode unit of the electrostatic chuck; and a potential difference control unit for controlling the application of the potential difference by the potential difference application unit. The potential difference control unit performs control so that a first potential difference for making a first object to be attracted be attracted by the electrostatic chuck, a second potential difference smaller than the first potential difference, and a third potential difference for making a second object to be attracted be attracted by the electrostatic chuck via the first object to be attracted are sequentially applied to the electrode unit, the third potential difference being equal to or larger than the second potential difference.SELECTED DRAWING: Figure 5

Description

本発明は、静電チャックに関するものである。   The present invention relates to an electrostatic chuck.

有機ＥＬ表示装置の製造においては、成膜装置の蒸発源から蒸発した蒸着材料を、画素パターンが形成されたマスクを介して、基板に蒸着させることで、有機物層や金属層が形成される。   In manufacturing an organic EL display device, an organic material layer or a metal layer is formed by depositing a deposition material evaporated from an evaporation source of a film forming apparatus on a substrate through a mask on which a pixel pattern is formed.

上向蒸着方式の成膜装置において、蒸発源は成膜装置の真空容器の下部に設けられ、基板は真空容器の上部に配置され、基板の下面に蒸着される。このような上向蒸着方式の成膜装置の真空容器内において、基板はその下面が基板ホルダによって保持されるが、基板の自重による基板の撓みが、蒸着精度を落とす要因となっている。   In an upward deposition type film forming apparatus, an evaporation source is provided at a lower portion of a vacuum vessel of the film forming apparatus, and a substrate is disposed at an upper portion of the vacuum vessel, and is deposited on a lower surface of the substrate. In a vacuum vessel of such an upward evaporation type film forming apparatus, the lower surface of the substrate is held by a substrate holder, but the bending of the substrate due to its own weight causes the deposition accuracy to be reduced.

基板の自重による撓みを低減するための方法として、静電チャックを使う技術が検討されている。すなわち、基板ホルダの支持部の上部に静電チャックを設け、静電チャックを基板の上面に近接又は接触させた状態で静電チャックに吸着電位差を印加する。このようにして、基板の表面に反対極性の電荷を誘導することで、基板の中央部が静電チャックの静電引力によって引っ張られるようにして、基板の撓みを低減することができる。   As a method for reducing the deflection of the substrate due to its own weight, a technique using an electrostatic chuck has been studied. That is, an electrostatic chuck is provided above the support portion of the substrate holder, and a suction potential difference is applied to the electrostatic chuck in a state where the electrostatic chuck is close to or in contact with the upper surface of the substrate. In this way, by inducing charges of the opposite polarity on the surface of the substrate, the central portion of the substrate is pulled by the electrostatic attraction of the electrostatic chuck, and the deflection of the substrate can be reduced.

特許文献１（特表２０１６−５３９４８９号公報）では、静電チャックにより基板を保持した状態でマスクを吸着する技術が提案されている。   Patent Literature 1 (Japanese Patent Application Laid-Open No. 2006-529489) proposes a technique of adsorbing a mask while holding a substrate by an electrostatic chuck.

特表２０１６−５３９４８９号公報JP-T-2006-593489A

本発明は、基板やマスク等の被吸着体を良好に静電チャックに吸着することができる技術を提供することを目的とする。   An object of the present invention is to provide a technique capable of satisfactorily adsorbing an object to be attracted such as a substrate or a mask to an electrostatic chuck.

本発明の第１態様による静電チャックシステムは、被吸着体を吸着するための静電チャックシステムであって、電極部を含む静電チャックと、前記静電チャックの前記電極部に電位差を印加するための電位差印加部と、前記電位差印加部による電位差の印加を制御するための電位差制御部とを含み、前記電位差制御部は、第１被吸着体を前記静電チャックに吸着させるための第１電位差、前記第１電位差よりも小さい第２電位差、及び前記静電チャックに前記第１被吸着体を介して、第２被吸着体を吸着するための第３電位差が前記電極部に順次に印加されるように制御し、前記第３電位差は、前記第２電位差以上であることを特徴とする。   An electrostatic chuck system according to a first aspect of the present invention is an electrostatic chuck system for adsorbing an object to be adsorbed, and applies a potential difference to an electrostatic chuck including an electrode unit and the electrode unit of the electrostatic chuck. And a potential difference control unit for controlling the application of a potential difference by the potential difference application unit, wherein the potential difference control unit is configured to hold a first object to be attracted to the electrostatic chuck. The first potential difference, the second potential difference smaller than the first potential difference, and the third potential difference for adsorbing the second chuck on the electrostatic chuck via the first chuck are sequentially applied to the electrode unit. The voltage is controlled so as to be applied, and the third potential difference is equal to or greater than the second potential difference.

本発明の第２態様による成膜装置は、基板にマスクを介して成膜を行うための成膜装置であって、第１被吸着体である基板と第２被吸着体であるマスクを吸着するための静電チャックシステムを含み、前記静電チャックシステムは本発明の第１態様による静電チャックシステムであることを特徴とする。   A film forming apparatus according to a second aspect of the present invention is a film forming apparatus for forming a film on a substrate via a mask, and adsorbs a substrate as a first object to be adsorbed and a mask as a second object to be adsorbed. Wherein the electrostatic chuck system is an electrostatic chuck system according to the first aspect of the present invention.

本発明の第３態様による吸着方法は、被吸着体を吸着するための吸着方法であって、静電チャックの電極部に第１電位差を印加して第１被吸着体を静電チャックに吸着する工程と、前記電極部に前記第１電位差よりも小さい第２電位差を印加する工程と、前記電極部に前記第２電位差以上の第３電位差を印加して、前記静電チャックに前記第１被吸着体を介して前記第２被吸着体を吸着する工程とを含むことを特徴とする。   The adsorption method according to the third aspect of the present invention is an adsorption method for adsorbing an object to be adsorbed, wherein a first potential difference is applied to an electrode portion of the electrostatic chuck to adsorb the first object to be adsorbed to the electrostatic chuck. And applying a second potential difference smaller than the first potential difference to the electrode portion, and applying a third potential difference greater than or equal to the second potential difference to the electrode portion to apply the first potential difference to the electrostatic chuck. And adsorbing the second object to be adsorbed via the object to be adsorbed.

本発明の第４態様による成膜方法は、基板にマスクを介して蒸着材料を成膜する方法であって、真空容器内にマスクを搬入する工程と、前記真空容器内に基板を搬入する工程と、静電チャックの電極部に第１電位差を印加して、前記基板を前記静電チャックに吸着する工程と、前記電極部に前記第１電位差よりも小さい第２電位差を印加する工程と、前記電極部に前記第２電位差以上の第３電位差を印加して、前記静電チャックに前記基板を介して前記マスクを吸着する工程と、前記静電チャックに前記基板と前記マスクが吸着した状態で、蒸着材料を蒸発させ、前記マスクを介して前記基板に前記蒸着材料を成膜する工程とを含むことを特徴とする。   A film forming method according to a fourth aspect of the present invention is a method of forming a deposition material on a substrate via a mask, wherein the step of carrying the mask into a vacuum vessel and the step of carrying the substrate into the vacuum vessel Applying a first potential difference to the electrode portion of the electrostatic chuck to attract the substrate to the electrostatic chuck, and applying a second potential difference smaller than the first potential difference to the electrode portion; Applying a third potential difference greater than or equal to the second potential difference to the electrode portion to attract the mask to the electrostatic chuck via the substrate, and adsorbing the substrate and the mask to the electrostatic chuck; And evaporating the deposition material, and forming the deposition material on the substrate via the mask.

本発明の第５態様による電子デバイスの製造方法は、本発明の第４態様による成膜方法を用いて電子デバイスを製造することを特徴とする。   A method of manufacturing an electronic device according to a fifth aspect of the present invention is characterized by manufacturing an electronic device using the film forming method according to the fourth aspect of the present invention.

本発明によれば、基板やマスク等の被吸着体を良好に静電チャックに吸着することができる。   ADVANTAGE OF THE INVENTION According to this invention, a to-be-adsorbed body, such as a board | substrate and a mask, can be adsorbed favorably to an electrostatic chuck.

図１は、電子デバイスの製造装置の一部の模式図である。FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. 図２は、本発明の一実施形態による成膜装置の模式図である。FIG. 2 is a schematic diagram of a film forming apparatus according to one embodiment of the present invention. 図３Ａは、本発明の一実施形態による静電チャックシステムの概念図である。FIG. 3A is a conceptual diagram of an electrostatic chuck system according to an embodiment of the present invention. 図３Ｂは、本発明の一実施形態による静電チャックシステムの模式図である。FIG. 3B is a schematic diagram of an electrostatic chuck system according to an embodiment of the present invention. 図３Ｃは、本発明の一実施形態による静電チャックシステムの模式図である。FIG. 3C is a schematic diagram of an electrostatic chuck system according to one embodiment of the present invention. 図４Ａは、基板及びマスクの静電チャックへの吸着、保持のシーケンスを示す模式図である。FIG. 4A is a schematic diagram showing a sequence of suction and holding of the substrate and the mask on the electrostatic chuck. 図４Ｂは、基板及びマスクの静電チャックへの吸着、保持のシーケンスを示す模式図である。FIG. 4B is a schematic diagram showing a sequence of suction and holding of the substrate and the mask on the electrostatic chuck. 図４Ｃは、基板及びマスクの静電チャックへの吸着、保持のシーケンスを示す模式図である。FIG. 4C is a schematic diagram showing a sequence of suction and holding of the substrate and the mask on the electrostatic chuck. 図４Ｄは、基板及びマスクの静電チャックへの吸着、保持のシーケンスを示す模式図である。FIG. 4D is a schematic view showing a sequence of suction and holding of the substrate and the mask on the electrostatic chuck. 図５は、静電チャックに印加される電位差の変化を示すグラフである。FIG. 5 is a graph showing a change in a potential difference applied to the electrostatic chuck. 図６は、電子デバイスを示す模式図である。FIG. 6 is a schematic diagram illustrating an electronic device.

以下、図面を参照しつつ本発明の好適な実施形態及び実施例を説明する。ただし、以下の実施形態及び実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲はそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。   Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative examples of preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, in the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention to only these unless otherwise specified. It is not intended.

本発明は、基板の表面に真空蒸着によって所望のパターンの薄膜（材料層）を形成する
装置に望ましく適用することができる。基板の材料としては、硝子、高分子材料のフィルム、金属などの任意の材料を選択してもよく、また、蒸着材料としても、有機材料、金属性材料（金属、金属酸化物など）などの任意の材料を選択してもよい。本発明の技術は、具体的には、有機電子デバイス（例えば、有機ＥＬ表示装置、薄膜太陽電池）、光学部材などの製造装置に適用可能である。その中でも、有機ＥＬ表示装置の製造装置においては、蒸着材料を蒸発させてマスクを介して基板に蒸着させることで有機ＥＬ表示素子を形成しているので、本発明の好ましい適用例の一つである。 The present invention can be desirably applied to an apparatus for forming a thin film (material layer) of a desired pattern on a surface of a substrate by vacuum evaporation. As the material of the substrate, any material such as a glass, a film of a polymer material, or a metal may be selected. Also, as the vapor deposition material, an organic material, a metal material (a metal, a metal oxide, or the like) may be used. Any material may be selected. The technique of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (for example, organic EL display devices, thin-film solar cells), optical members, and the like. Among them, in a manufacturing apparatus of an organic EL display device, an organic EL display element is formed by evaporating an evaporation material and evaporating the evaporation material on a substrate through a mask. is there.

＜電子デバイスの製造装置＞
図１は、電子デバイスの製造装置の一部の構成を模式的に示す平面図である。 <Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

図１の製造装置は、例えば、スマートフォン用の有機ＥＬ表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば、４．５世代の基板（約７００ｍｍ×９００ｍｍ）や６世代のフルサイズ（約１５００ｍｍ×約１８５０ｍｍ）又はハーフカットサイズ（約１５００ｍｍ×約９２５ｍｍ）の基板に、有機ＥＬ素子の形成のための成膜を行った後、該基板を切り抜いて複数の小さなサイズのパネルに製作する。   The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, a 4.5 generation substrate (about 700 mm × 900 mm) or a 6 generation full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 925 mm) substrate, After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

電子デバイスの製造装置は、一般的に、複数のクラスタ装置１と、クラスタ装置１の間を繋ぐ中継装置とを含む。   An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects between the cluster apparatuses 1.

クラスタ装置１は、基板Ｓに対する処理（例えば、成膜）を行う複数の成膜装置１１と、使用前後のマスクを収納する複数のマスクストック装置１２と、その中央に配置される搬送室１３を具備する。   The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing processing (for example, film formation) on the substrate S, a plurality of mask stock apparatuses 12 for storing masks before and after use, and a transfer chamber 13 arranged at the center thereof. Have.

搬送室１３内には、複数の成膜装置１１の間で基板Ｓを搬送し、成膜装置１１とマスクストック装置１２との間でマスクを搬送する搬送ロボット１４が設置される。搬送ロボット１４は、例えば、多関節アームに、基板Ｓを保持するロボットハンドが取り付けられた構造を有するロボットである。   In the transfer chamber 13, a transfer robot 14 that transfers the substrate S between the plurality of film forming apparatuses 11 and transfers a mask between the film forming apparatus 11 and the mask stock apparatus 12 is installed. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate S is attached to an articulated arm.

成膜装置１１（蒸着装置とも呼ぶ）では、蒸発源に収納された蒸着材料がヒータによって加熱されて蒸発し、マスクを介して基板上に蒸着される。搬送ロボット１４との基板Ｓの受け渡し、基板Ｓとマスクの相対位置の調整（アライメント）、マスク上への基板Ｓの固定、成膜（蒸着）などの一連の成膜プロセスは、成膜装置によって行われる。   In the film forming apparatus 11 (also referred to as an evaporation apparatus), an evaporation material stored in an evaporation source is heated by a heater to evaporate, and is evaporated on a substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment of the relative position between the substrate S and the mask (alignment), fixing of the substrate S on the mask, and film formation (evaporation) are performed by a film forming apparatus. Done.

マスクストック装置１２には、成膜装置１１での成膜工程に使われる新しいマスクと、使用済みのマスクとが、二つのカセットに分けて収納される。搬送ロボット１４は、使用済みのマスクを成膜装置１１からマスクストック装置１２のカセットに搬送し、マスクストック装置１２の他のカセットに収納された新しいマスクを成膜装置１１に搬送する。   In the mask stock apparatus 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

クラスタ装置１には、基板Ｓの流れ方向において上流側からの基板Ｓを当該クラスタ装置１に伝達するパス室１５と、当該クラスタ装置１で成膜処理が完了した基板Ｓを下流側の他のクラスタ装置１に伝えるためのバッファー室１６が連結される。搬送室１３の搬送ロボット１４は、上流側のパス室１５から基板Ｓを受け取って、当該クラスタ装置１内の成膜装置１１の一つ（例えば、成膜装置１１ａ）に搬送する。また、搬送ロボット１４は、当該クラスタ装置１での成膜処理が完了した基板Ｓを複数の成膜装置１１の一つ（例えば、成膜装置１１ｂ）から受け取って、下流側に連結されたバッファー室１６に搬送する。   The cluster apparatus 1 includes a pass chamber 15 for transmitting the substrate S from the upstream side to the cluster apparatus 1 in the flow direction of the substrate S, and another substrate S on which the film forming process is completed in the cluster apparatus 1 on the downstream side. A buffer chamber 16 for communicating to the cluster device 1 is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. Further, the transfer robot 14 receives the substrate S on which the film forming process has been completed in the cluster device 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and connects the buffer S connected to the downstream side. It is transported to the chamber 16.

バッファー室１６とパス室１５との間には、基板の向きを変える旋回室１７が設置される。旋回室１７には、バッファー室１６から基板Ｓを受け取って基板Ｓを１８０°回転さ
せ、パス室１５に搬送するための搬送ロボット１８が設けられる。これにより、上流側のクラスタ装置１と下流側のクラスタ装置１で基板Ｓの向きが同一となり、基板処理が容易になる。 A swirling chamber 17 that changes the direction of the substrate is provided between the buffer chamber 16 and the pass chamber 15. The swiveling chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transferring the substrate S to the pass chamber 15. Thereby, the direction of the substrate S is the same in the cluster device 1 on the upstream side and the cluster device 1 on the downstream side, and substrate processing is facilitated.

パス室１５、バッファー室１６、旋回室１７は、２つのクラスタ装置１の間を連結する、いわゆる中継装置であり、クラスタ装置１の上流側及び／又は下流側に設置される中継装置は、パス室１５、バッファー室１６、旋回室１７のうち少なくとも１つを含む。   The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect between the two cluster devices 1, and the relay devices installed on the upstream and / or downstream of the cluster device 1 It includes at least one of the chamber 15, the buffer chamber 16, and the swirl chamber 17.

成膜装置１１、マスクストック装置１２、搬送室１３、バッファー室１６、旋回室１７などは、有機ＥＬ表示パネルの製造の過程で、高真空状態に維持される。パス室１５は、通常低真空状態に維持されるが、必要に応じて高真空状態に維持されてもよい。   The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the swirling chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic EL display panel. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

本実施例では、図１を参照して、電子デバイスの製造装置の構成について説明したが、本発明はこれに限定されず、他の種類の装置やチャンバーを有してもよく、これらの装置やチャンバー間の配置が変わってもよい。   In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1. However, the present invention is not limited to this, and may have other types of apparatuses and chambers. Or the arrangement between chambers may be changed.

以下、成膜装置１１の具体的な構成について説明する。
＜成膜装置＞
図２は、成膜装置１１の構成を示す模式図である。以下の説明においては、鉛直方向をＺ方向とするＸＹＺ直交座標系を用いる。成膜時に基板Ｓが水平面（ＸＹ平面）と平行となるように固定された場合、基板Ｓの短手方向（短辺に平行な方向）をＸ方向、長手方向（長辺に平行な方向）をＹ方向とする。また、Ｚ軸まわりの回転角をθで表す。 Hereinafter, a specific configuration of the film forming apparatus 11 will be described.
<Deposition equipment>
FIG. 2 is a schematic diagram illustrating a configuration of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the short direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the long direction (direction parallel to the long side). Is the Y direction. The rotation angle about the Z axis is represented by θ.

成膜装置１１は、真空雰囲気又は窒素ガスなどの不活性ガス雰囲気に維持される真空容器２１と、真空容器２１の内部に設けられる、基板支持ユニット２２と、マスク支持ユニット２３と、静電チャック２４と、蒸発源２５とを含む。   The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as a nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and an evaporation source 25.

基板支持ユニット２２は、搬送室１３に設けられた搬送ロボット１４が搬送して来る基板Ｓを受取り保持する手段であり、基板ホルダとも呼ばれる。   The substrate support unit 22 is a unit that receives and holds the substrate S transported by the transport robot 14 provided in the transport chamber 13, and is also called a substrate holder.

基板支持ユニット２２の下方には、マスク支持ユニット２３が設けられる。マスク支持ユニット２３は、搬送室１３に設けられた搬送ロボット１４が搬送して来るマスクＭを受取り保持する手段であり、マスクホルダとも呼ばれる。   A mask support unit 23 is provided below the substrate support unit 22. The mask support unit 23 is a unit that receives and holds the mask M transported by the transport robot 14 provided in the transport chamber 13, and is also called a mask holder.

マスクＭは、基板Ｓ上に形成する薄膜パターンに対応する開口パターンを有し、マスク支持ユニット２３の上に載置される。特に、スマートフォン用の有機ＥＬ素子を製造するのに使われるマスクは、微細な開口パターンが形成された金属製のマスクであり、ＦＭＭ（Fine Metal Mask）とも呼ぶ。   The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is mounted on the mask support unit 23. In particular, a mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called an FMM (Fine Metal Mask).

基板支持ユニット２２の上方には、基板Ｓを静電引力によって吸着し固定するための静電チャック２４が設けられる。静電チャック２４は、誘電体（例えば、セラミック材質）マトリックス内に金属電極などの電気回路が埋設された構造を有する。金属電極にプラス（＋）及びマイナス（−）の電位が印加されると、誘電体マトリックスを通じて基板Ｓなどの被吸着体に金属電極と反対極性の分極電荷が誘導され、これらの間の静電引力によって基板Ｓが静電チャック２４に吸着固定される。静電チャック２４は、一つのプレートで形成されてもよく、複数のサブプレートを有するように形成されてもよい。また、一つのプレートで形成される場合にも、その内部に複数の電気回路を含み、一つのプレート内で位置によって静電引力が異なるように制御してもよい。   Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate S by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. When plus (+) and minus (-) potentials are applied to the metal electrode, a polarization charge having a polarity opposite to that of the metal electrode is induced in the object to be adsorbed such as the substrate S through the dielectric matrix. The substrate S is attracted and fixed to the electrostatic chuck 24 by the attractive force. The electrostatic chuck 24 may be formed of one plate or may have a plurality of sub-plates. Further, even in the case where a single plate is formed, a plurality of electric circuits may be included therein, and the control may be performed such that the electrostatic attraction differs depending on the position in one plate.

本実施形態では後述のように、成膜前に静電チャック２４で基板Ｓ（第１被吸着体）だ
けでなく、マスクＭ（第２被吸着体）も吸着し保持する。その後、静電チャック２４で基板Ｓ（第１被吸着体）とマスクＭ（第２被吸着体）を保持した状態で、成膜を行う。 In the present embodiment, as described later, not only the substrate S (the first suction target) but also the mask M (the second suction target) is sucked and held by the electrostatic chuck 24 before film formation. Thereafter, film formation is performed with the electrostatic chuck 24 holding the substrate S (the first suction target) and the mask M (the second suction target).

本実施例では、静電チャック２４の鉛直方向の下側に配置される基板Ｓ（第１被吸着体）を静電チャックに吸着及び保持し、その後、基板Ｓ（第１被吸着体）を中心に静電チャック２４と反対側に配置されるマスクＭ（第２被吸着体）を、基板Ｓ（第１被吸着体）越しに静電チャック２４に吸着し保持する。   In the present embodiment, the substrate S (first object to be suctioned) disposed vertically below the electrostatic chuck 24 is sucked and held by the electrostatic chuck, and then the substrate S (first object to be suctioned) is held. A mask M (second object to be attracted) arranged at the center on the opposite side to the electrostatic chuck 24 is attracted to and held by the electrostatic chuck 24 over the substrate S (first object to be attracted).

図２には図示していないが、静電チャック２４の吸着面とは反対側に基板Ｓの温度上昇を抑える冷却機構（例えば、冷却板）を設けることで、有機材料の変質や劣化を抑制する構成としてもよい。   Although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing a temperature rise of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, deterioration and deterioration of the organic material are suppressed. It is good also as a structure which performs.

また、図２に図示していないが、静電チャック２４は、マグネット板を兼ねていてもよい。マグネット板は、磁力によってマスクＭを引き付けることで、成膜時の基板ＳとマスクＭの密着性を高める部材である。   Although not shown in FIG. 2, the electrostatic chuck 24 may also serve as a magnet plate. The magnet plate is a member that enhances the adhesion between the substrate S and the mask M during film formation by attracting the mask M by magnetic force.

蒸発源２５は、基板に成膜される蒸着材料が収納されるるつぼ（不図示）、るつぼを加熱するためのヒータ（不図示）、蒸発源からの蒸発レートが一定になるまで蒸着材料が基板に飛散することを阻むシャッタ（不図示）などを含む。蒸発源２５は、点（point）蒸
発源や線形（linear）蒸発源など、用途に従って多様な構成を有することができる。 The evaporation source 25 includes a crucible (not shown) in which a vapor deposition material to be formed on the substrate is stored, a heater (not shown) for heating the crucible, and a vapor deposition material until the evaporation rate from the evaporation source becomes constant. And a shutter (not shown) for preventing the light from being scattered. The evaporation source 25 may have various configurations according to the application, such as a point evaporation source and a linear evaporation source.

図２に図示していないが、成膜装置１１は、基板に蒸着された膜の厚さを測定するための膜厚モニタ（不図示）及び膜厚算出ユニット（不図示）を含む。   Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate and a film thickness calculating unit (not shown).

真空容器２１の上部外側（大気側）には、基板Ｚアクチュエータ２６、マスクＺアクチュエータ２７、静電チャックＺアクチュエータ２８、位置調整機構２９などが設けられる。これらのアクチュエータと位置調整機構は、例えば、モータとボールねじ、或いはモータとリニアガイドなどで構成される。基板Ｚアクチュエータ２６は、基板支持ユニット２２を昇降（Ｚ方向移動）させるための駆動手段である。マスクＺアクチュエータ２７は、マスク支持ユニット２３を昇降（Ｚ方向移動）させるための駆動手段である。静電チャックＺアクチュエータ２８は、静電チャック２４を昇降（Ｚ方向移動）させるための駆動手段である。   A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outside (atmosphere side) of the vacuum vessel 21. These actuators and position adjustment mechanisms are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving unit for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a driving unit for moving the mask support unit 23 up and down (moving in the Z direction). The electrostatic chuck Z actuator 28 is a driving unit for moving the electrostatic chuck 24 up and down (moving in the Z direction).

位置調整機構２９は、静電チャック２４のアライメントのための駆動手段である。位置調整機構２９は、静電チャック２４全体を基板支持ユニット２２及びマスク支持ユニット２３に対して、Ｘ方向移動、Ｙ方向移動、θ回転させる。なお、本実施形態では、静電チャック２４をＸ、Ｙ、θ方向に位置調整することで、基板ＳとマスクＭの両者の位置を調整するアライメントを行ってもよい。   The position adjusting mechanism 29 is a driving unit for aligning the electrostatic chuck 24. The position adjustment mechanism 29 causes the entire electrostatic chuck 24 to move in the X direction, the Y direction, and the θ rotation with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the position of the electrostatic chuck 24 may be adjusted in the X, Y, and θ directions to perform alignment for adjusting the positions of both the substrate S and the mask M.

真空容器２１の外側上面には、上述した駆動機構の他に、真空容器２１の上面に設けられた透明窓を介して、基板Ｓ及びマスクＭに形成されたアライメントマークを撮影するためのアライメント用カメラ２０を設置してもよい。本実施例においては、アライメント用カメラ２０は、矩形の基板Ｓ、マスクＭ及び静電チャック２４の対角線に対応する位置または、矩形の４つのコーナー部に対応する位置に設置してもよい。   On the outer upper surface of the vacuum vessel 21, in addition to the above-described driving mechanism, an alignment mark for photographing alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper face of the vacuum vessel 21. A camera 20 may be provided. In this embodiment, the alignment camera 20 may be installed at a position corresponding to a diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24, or at a position corresponding to four rectangular corners.

本実施形態の成膜装置１１に設置されるアライメント用カメラ２０は、基板ＳとマスクＭとの相対的な位置を高精度で調整するのに使われるファインアライメント用カメラであり、その視野角は狭いが高解像度を持つカメラである。成膜装置１１は、アライメント用カメラ２０として、ファインアライメント用カメラの他に相対的に視野角が広くて低解像度であるラフアライメント用カメラを有してもよい。   The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a fine alignment camera used to adjust the relative position of the substrate S and the mask M with high accuracy, and has a view angle of It is a small but high resolution camera. The film forming apparatus 11 may include, as the alignment camera 20, a rough alignment camera having a relatively wide viewing angle and low resolution in addition to the fine alignment camera.

尚、位置調整機構２９は、アライメント用カメラ２０によって取得した基板Ｓ（第１被吸着体）及びマスクＭ（第２被吸着体）の位置情報に基づいて、基板Ｓ（第１被吸着体）とマスクＭ（第２被吸着体）を相対的に移動させて位置調整するアライメントを行う。   The position adjusting mechanism 29 is configured to control the position of the substrate S (first object) based on the position information of the substrate S (first object) and the mask M (second object) acquired by the alignment camera 20. And the mask M (second object) is relatively moved to perform position adjustment.

成膜装置１１は、制御部（不図示）を具備する。制御部は、基板Ｓの搬送及びアライメント、蒸発源の制御、成膜の制御などの機能を有する。制御部は、例えば、プロセッサ、メモリー、ストレージ、Ｉ/Ｏなどを持つコンピューターによって構成可能である。この
場合、制御部の機能はメモリーまたはストレージに格納されたプログラムをプロセッサが実行することにより実現される。コンピューターとしては、汎用のパーソナルコンピューターを使用してもよく、組込み型のコンピューターまたはＰＬＣ（Programmable Logic Controller）を使用してもよい。または、制御部の機能の一部または全部をＡＳＩＣやＦ
ＰＧＡのような回路で構成してもよい。また、成膜装置ごとに制御部が設置されていてもよく、一つの制御部が複数の成膜装置を制御するように構成してもよい。 The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source, and control of film formation. The control unit can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (Programmable Logic Controller) may be used. Alternatively, some or all of the functions of the control unit may be ASIC or F
You may comprise with a circuit like PGA. Further, a control unit may be provided for each film forming apparatus, and one control unit may be configured to control a plurality of film forming apparatuses.

＜静電チャックシステム＞
図３Ａ〜図３Ｃを参照して本実施形態による静電チャックシステム３０について説明する。図３Ａは、本実施形態の静電チャックシステム３０の概念的なブロック図であり、図３Ｂは静電チャック２４の模式的な断面図であり、図３Ｃは静電チャック２４の模式的な平面図である。 <Electrostatic chuck system>
The electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3C. FIG. 3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic sectional view of the electrostatic chuck 24, and FIG. FIG.

本実施形態の静電チャックシステム３０は、図３Ａに示すように、静電チャック２４と、電位差印加部３１と、電位差制御部３２とを含む。   As shown in FIG. 3A, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a potential difference applying unit 31, and a potential difference control unit 32.

電位差印加部３１は、静電チャック２４の電極部に静電引力を発生させるための電位差を印加する。このように、電位差印加部３１は、所望の電位（電位差）が形成されるように電圧を印加する。   The potential difference applying unit 31 applies a potential difference for generating an electrostatic attraction to the electrode unit of the electrostatic chuck 24. As described above, the potential difference applying unit 31 applies a voltage so that a desired potential (potential difference) is formed.

電位差制御部３２は、成膜装置１１の成膜工程の進行に応じて、電位差印加部３１から電極部に加えられる電位差の大きさ、電位差の印加開始時点、電位差の維持時間、電位差の印加順番などを制御する。電位差制御部３２は、例えば、静電チャック２４の電極部に含まれる複数のサブ電極部２４１〜２４９への電位差印加をサブ電極部別に独立的に制御することができる。本実施形態では、電位差制御部３２が成膜装置１１の制御部とは別途設けられているが、本発明はこれに限定されず、成膜装置１１の制御部に統合されてもよい。   The potential difference control unit 32 determines the magnitude of the potential difference applied from the potential difference application unit 31 to the electrode unit, the start time of application of the potential difference, the maintenance time of the potential difference, and the order of applying the potential difference in accordance with the progress of the film forming process of the film forming apparatus 11. Control and so on. The potential difference control unit 32 can independently control the application of the potential difference to the plurality of sub-electrodes 241 to 249 included in the electrodes of the electrostatic chuck 24 for each sub-electrode. In the present embodiment, the potential difference control unit 32 is provided separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and may be integrated with the control unit of the film forming apparatus 11.

静電チャック２４は、基板Ｓとの間で静電吸着力を発生させる電極部を含み、電極部は、複数のサブ電極部２４１〜２４９を含むことができる。例えば、本実施形態の静電チャック２４は、図３Ａに示すように、静電チャック２４の長手方向（Ｙ方向）および/また
は、静電チャック２４の短手方向（Ｘ方向）に沿って、分割された複数のサブ電極部２４１〜２４９を含む。したがって、電極部は、静電チャック２４が有する複数の辺のうちの一辺（第１辺）に沿って分割された複数のサブ電極部２４１〜２４９を含んでもよい。 The electrostatic chuck 24 includes an electrode unit that generates an electrostatic attraction force with the substrate S, and the electrode unit may include a plurality of sub electrode units 241 to 249. For example, as shown in FIG. 3A, the electrostatic chuck 24 of the present embodiment may be configured to extend along the longitudinal direction (Y direction) of the electrostatic chuck 24 and / or the short direction (X direction) of the electrostatic chuck 24. It includes a plurality of divided sub-electrode units 241 to 249. Therefore, the electrode section may include a plurality of sub-electrode sections 241 to 249 divided along one side (first side) of the plurality of sides of the electrostatic chuck 24.

サブ電極部２４１〜２４９のそれぞれは、静電吸着力を発生させるためにプラス（第１極性）及びマイナス（第２極性）の電位が印加される電極対３３を含む。例えば、それぞれの電極対３３は、プラス電位が印加される第１電極３３１と、マイナス電位が印加される第２電極３３２とを含む。   Each of the sub-electrode portions 241 to 249 includes an electrode pair 33 to which a plus (first polarity) and a minus (second polarity) potential is applied to generate an electrostatic attraction force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

第１電極３３１及び第２電極３３２は、図３Ｃに図示したように、それぞれ櫛形状を有する。例えば、第１電極３３１及び第２電極３３２は、それぞれ複数の櫛歯部と、複数の
櫛歯部に連結される基部とを含む。各電極３３１、３３２の基部は櫛歯部に電位を供給し、複数の櫛歯部は、基板Ｓとの間で静電吸着力を生じさせる。一つのサブ電極部において、第１電極３３１の各櫛歯部は、第２電極３３２の各櫛歯部と対向するように、交互に配置される。 The first electrode 331 and the second electrode 332 each have a comb shape as shown in FIG. 3C. For example, each of the first electrode 331 and the second electrode 332 includes a plurality of comb teeth and a base connected to the plurality of comb teeth. The bases of the electrodes 331 and 332 supply a potential to the comb teeth, and the plurality of comb teeth generate an electrostatic attraction force with the substrate S. In one sub-electrode portion, the comb teeth of the first electrode 331 are alternately arranged so as to face the comb teeth of the second electrode 332.

第１電極３３１及び第２電極３３２に印加される電位に対応して被吸着体である基板Ｓが静電誘導あるいは誘電分極により帯電して静電チャック２４に吸着されるが、第１電極３３１の櫛歯部及び第２電極３３２の櫛歯部を細く、かつ間隔を狭くすることで絶縁体である基板Ｓに対しても十分に強い吸着力を発生させることができる。   The substrate S, which is the object to be attracted, is charged by electrostatic induction or dielectric polarization and is attracted to the electrostatic chuck 24 according to the potential applied to the first electrode 331 and the second electrode 332. By making the comb-tooth portion of the second electrode 332 and the comb-tooth portion of the second electrode 332 thinner and narrower, it is possible to generate a sufficiently strong adsorption force even on the substrate S which is an insulator.

つまり、第１電極３３１の櫛歯部及び第２電極３３２の櫛歯部によって大きな不均一な電界を形成し、これによるグラジエント力によって絶縁性基板を強く吸着することができる。櫛歯部の間隔が狭いほど電界強度の勾配が大きくなり、吸着力も大きくなる。櫛歯部間の電界の勾配が大きいため、絶縁破壊が生じないように、静電チャック２４の電極部が埋設される誘電体マトリックスとしては高抵抗材料を用いることが望ましい。   In other words, a large non-uniform electric field is formed by the comb teeth of the first electrode 331 and the comb teeth of the second electrode 332, and the insulating substrate can be strongly attracted by the resulting gradient force. The smaller the interval between the comb teeth, the greater the gradient of the electric field intensity and the greater the attraction force. Since the gradient of the electric field between the comb teeth is large, it is desirable to use a high-resistance material as the dielectric matrix in which the electrode portion of the electrostatic chuck 24 is buried so that dielectric breakdown does not occur.

本実施例においては、静電チャック２４のサブ電極部２４１〜２４９の各電極３３１、３３２が櫛形状を有すると説明したが、本発明はそれに限定されず、基板Ｓとの間で静電引力を発生させることができる限り、多様な形状を持つことができる。   In the present embodiment, the electrodes 331 and 332 of the sub-electrodes 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape. However, the present invention is not limited to this, and the electrostatic attraction between the substrate S and the substrate S is not limited thereto. Can have various shapes, as long as the shape can be generated.

本実施形態の静電チャック２４は、複数のサブ電極部に対応する複数の吸着部を有する。例えば、本実施例の静電チャック２４は、図３Ｃに図示したように、９つのサブ電極部２４１〜２４９に対応する９つの吸着部を有するが、これに限定されず、基板Ｓの吸着をより精緻に制御するため、他の個数の吸着部を有してもよい。   The electrostatic chuck 24 of the present embodiment has a plurality of suction units corresponding to the plurality of sub-electrode units. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment has nine suction portions corresponding to the nine sub-electrode portions 241 to 249, but is not limited thereto. For more precise control, another number of suction units may be provided.

吸着部は、静電チャック２４の長手方向（Ｙ軸方向）及び短手方向（Ｘ軸方向）に分割されるように設けられるが、これに限定されず、静電チャック２４の長手方向または短手方向だけに分割されてもよい。複数の吸着部は、物理的に一つのプレートが複数の電極部を持つことで構成されてもよく、物理的に分割された複数のプレートそれぞれが一つまたはそれ以上の電極部を持つことで構成されてもよい。例えば、図３Ｃに示した実施例において、複数の吸着部のそれぞれが複数のサブ電極部のそれぞれに対応するように構成されてもよく、一つの吸着部が複数のサブ電極部を含むように構成されてもよい。   The suction unit is provided so as to be divided in the longitudinal direction (Y-axis direction) and the short direction (X-axis direction) of the electrostatic chuck 24, but is not limited thereto. It may be divided only in the hand direction. The plurality of adsorption units may be configured by physically having one plate having a plurality of electrode units, and by physically dividing a plurality of plates each having one or more electrode units. It may be configured. For example, in the embodiment shown in FIG. 3C, each of the plurality of suction sections may be configured to correspond to each of the plurality of sub-electrode sections, and one suction section may include a plurality of sub-electrode sections. It may be configured.

つまり、電位差制御部３２によるサブ電極部２４１〜２４９への電位差の印加を制御することで、後述するように、基板Ｓの吸着進行方向（Ｘ方向）と交差する方向（Ｙ方向）に配置された３つのサブ電極部２４１、２４４、２４７によって一つの吸着部を成すようにすることができる。すなわち、３つのサブ電極部２４１、２４４、２４７のそれぞれは、独立的に電位差制御が可能であるが、これら３つのサブ電極部２４１、２４４、２４７に同時に電位差が印加されるように制御することで、これら３つのサブ電極部２４１、２４４、２４７が一つの吸着部として機能するようにすることができる。複数の吸着部のそれぞれが独立的に基板Ｓの吸着を行うことができる限り、その具体的な物理的構造及び電気回路的構造を変更してもよい。   That is, by controlling the application of the potential difference to the sub-electrode units 241 to 249 by the potential difference control unit 32, the substrate S is arranged in a direction (Y direction) intersecting with the suction progress direction (X direction) of the substrate S, as described later. The three sub-electrodes 241, 244, and 247 can form one suction unit. That is, each of the three sub-electrodes 241, 244, and 247 can independently control the potential difference. However, it is necessary to control so that a potential difference is simultaneously applied to these three sub-electrodes 241, 244, and 247. Thus, these three sub-electrodes 241, 244, and 247 can function as one suction unit. The specific physical structure and electric circuit structure may be changed as long as each of the plurality of suction units can independently suction the substrate S.

＜静電チャックシステムによる吸着方法及び電位差の制御＞
以下、図４Ａ〜図４Ｄ及び図５を参照して、静電チャック２４に基板Ｓ及びマスクＭを吸着する工程及び電位差の制御について説明する。 <Suction method and control of potential difference by electrostatic chuck system>
Hereinafter, a process of attracting the substrate S and the mask M to the electrostatic chuck 24 and control of the potential difference will be described with reference to FIGS. 4A to 4D and FIG.

図４Ａは、静電チャック２４に基板Ｓを吸着する工程を図示する。
本実施形態においては、図４Ａに示したように、基板Ｓが静電チャック２４の下面の全面に同時に吸着されるのではなく、静電チャック２４の第１辺（短辺）に沿って静電チャ
ック２４の一端から他端に向かって順次に吸着が進行する。ただし、本発明はこれに限定されず、例えば、静電チャック２４の対角線上の一つの角からこれと対向する他の角に向かって基板の吸着が進行してもよい。 FIG. 4A illustrates a process of attracting the substrate S to the electrostatic chuck 24.
In the present embodiment, as shown in FIG. 4A, the substrate S is not adsorbed on the entire lower surface of the electrostatic chuck 24 at the same time, but statically along the first side (short side) of the electrostatic chuck 24. Suction proceeds sequentially from one end of the electric chuck 24 to the other end. However, the present invention is not limited to this, and, for example, the suction of the substrate may proceed from one diagonal corner of the electrostatic chuck 24 to another opposite corner.

静電チャック２４の第１辺に沿って基板Ｓが順次に吸着されるようにするために、複数のサブ電極部２４１〜２４９に基板Ｓの吸着のための第１電位差を印加する順番を制御してもよく、複数のサブ電極部２４１〜２４９に同時に第１電位差を印加するが、基板Ｓを支持する基板支持ユニット２２の支持部の構造や支持力を異ならせてもよい。例えば、電位差制御部３２は、複数のサブ電極部２４１〜２４９のうち、静電チャック２４の一端のサブ電極部２４１から静電チャック２４の第１辺に沿って静電チャック２４の他端のサブ電極部２４９に向かって順次に、第１電位差が印加されるように制御してもよい。   In order to sequentially attract the substrate S along the first side of the electrostatic chuck 24, the order in which the first potential difference for attracting the substrate S is applied to the plurality of sub-electrode units 241 to 249 is controlled. Although the first potential difference may be simultaneously applied to the plurality of sub-electrode units 241 to 249, the structure and the supporting force of the supporting unit of the substrate supporting unit 22 that supports the substrate S may be different. For example, the potential difference control unit 32 is configured such that, of the plurality of sub-electrode units 241 to 249, the sub-electrode unit 241 at one end of the electrostatic chuck 24 and the other end of the electrostatic chuck 24 along the first side of the electrostatic chuck 24. The control may be performed such that the first potential difference is sequentially applied toward the sub-electrode portion 249.

図４Ａは、静電チャック２４の複数のサブ電極部２４１〜２４９に印加される電位差の制御によって、基板Ｓを静電チャック２４に順次に吸着させる実施形態を示す。ここでは、静電チャック２４の長辺方向（Ｙ方向）に沿って配置される３つのサブ電極部２４１、２４４、２４７が第１吸着部４１を成し、静電チャック２４の中央部の３つのサブ電極部２４２、２４５、２４８が第２吸着部４２を成し、残り３つのサブ電極部２４３、２４６、２４９が第３吸着部４３を成すことを前提に説明する。   FIG. 4A shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the potential difference applied to the plurality of sub-electrodes 241 to 249 of the electrostatic chuck 24. Here, three sub-electrodes 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first suction unit 41, and the three sub-electrodes 241 at the center of the electrostatic chuck 24 are formed. The description will be made on the assumption that one sub-electrode portion 242, 245, 248 forms the second suction portion 42, and the remaining three sub-electrode portions 243, 246, 249 form the third suction portion 43.

まず、図４Ａに示したように、成膜装置１１の真空容器２１内に基板Ｓが搬入され、基板支持ユニット２２の支持部に載置される。   First, as shown in FIG. 4A, the substrate S is carried into the vacuum vessel 21 of the film forming apparatus 11 and placed on the support of the substrate support unit 22.

続いて、静電チャック２４が下降し、基板支持ユニット２２の支持部上に載置された基板Ｓに向かって移動する。   Subsequently, the electrostatic chuck 24 moves down and moves toward the substrate S placed on the support of the substrate support unit 22.

静電チャック２４が基板Ｓに十分に近接または接触すると、電位差制御部３２は、静電チャック２４の第１辺（短手）に沿って第１吸着部４１から第３吸着部４３に向かって順次に第１電位差（ΔＶ１）が印加されるように制御する。   When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the potential difference control unit 32 moves from the first suction unit 41 to the third suction unit 43 along the first side (short side) of the electrostatic chuck 24. Control is performed so that the first potential difference (ΔV1) is sequentially applied.

つまり、図４Ａに示したように、第１吸着部４１に先に第１電位差が印加され、次いで、第２吸着部４２に第１電位差が印加され、最終的に第３吸着部４３に第１電位差が印加されるように制御する。   That is, as shown in FIG. 4A, the first potential difference is applied first to the first suction unit 41, then the first potential difference is applied to the second suction unit 42, and finally, the third potential Control is performed so that one potential difference is applied.

第１電位差（ΔＶ１）は、基板Ｓを静電チャック２４に確実に吸着させるために十分な大きさの電位差に設定される。   The first potential difference ([Delta] V1) is set to a sufficiently large potential difference so that the substrate S is surely attracted to the electrostatic chuck 24.

これにより、基板Ｓの静電チャック２４への吸着が、基板Ｓの第１吸着部４１に対応する側から基板Ｓの中央部を経て、第３吸着部４３側に向かって進行し（すなわち、Ｘ方向に基板Ｓの吸着が進行し）、基板Ｓは、基板Ｓの中央部にしわ（撓み）が残らずに、平らな状態で静電チャック２４に吸着される。これにより、静電チャック２４に吸着された基板Ｓの撓みが低減される。   Thereby, the suction of the substrate S to the electrostatic chuck 24 proceeds from the side corresponding to the first suction portion 41 of the substrate S to the third suction portion 43 through the central portion of the substrate S (ie, The attraction of the substrate S proceeds in the X direction), and the substrate S is attracted to the electrostatic chuck 24 in a flat state without leaving wrinkles (bending) at the center of the substrate S. Thereby, the bending of the substrate S sucked by the electrostatic chuck 24 is reduced.

本実施形態においては、静電チャック２４が基板Ｓに十分に近接或いは接触した状態で第１電位差（ΔＶ１）を印加する場合の一例を説明したが、静電チャック２４が基板Ｓに向かって下降を始める前に、或いは、下降の途中に第１電位差（ΔＶ１）を印加してもよい。   In the present embodiment, an example in which the first potential difference (ΔV1) is applied in a state where the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S has been described. The first potential difference (ΔV1) may be applied before starting or during the descent.

基板Ｓの静電チャック２４への吸着工程が完了した後の所定の時点で、電位差制御部３２は、図４Ｂに示したように、静電チャック２４の電極部に印加される電位差を、第１電位差（ΔＶ１）から第１電位差（ΔＶ１）よりも小さい第２電位差（ΔＶ２）に下げる。   At a predetermined point in time after the step of attracting the substrate S to the electrostatic chuck 24 is completed, the potential difference control unit 32 determines the potential difference applied to the electrode unit of the electrostatic chuck 24 as shown in FIG. The potential difference is reduced from one potential difference (ΔV1) to a second potential difference (ΔV2) smaller than the first potential difference (ΔV1).

第２電位差（ΔＶ２）は、基板Ｓを静電チャック２４に吸着された状態に維持するための吸着維持電位差であり、基板Ｓを静電チャック２４に吸着させる際に印加した第１電位差（ΔＶ１）よりも小さい電位差である。静電チャック２４に印加される電位差が第２電位差（ΔＶ２）に下がると、これに対応して基板Ｓに誘導される分極電荷量も、図４Ｂに示したように、第１電位差（ΔＶ１）が加えられた場合に比べて減少するが、基板Ｓが一旦第１電位差（ΔＶ１）によって静電チャック２４に吸着された以後は、第１電位差（ΔＶ１）よりも小さい第２電位差（ΔＶ２）を印加しても基板Ｓの吸着状態を維持することができる。   The second potential difference (ΔV2) is a suction maintaining potential difference for maintaining the substrate S in a state of being attracted to the electrostatic chuck 24, and the first potential difference (ΔV1) applied when the substrate S is attracted to the electrostatic chuck 24. ). When the potential difference applied to the electrostatic chuck 24 decreases to the second potential difference (ΔV2), the amount of polarization charge induced on the substrate S corresponding to this decreases, as shown in FIG. 4B, by the first potential difference (ΔV1). However, after the substrate S is once attracted to the electrostatic chuck 24 by the first potential difference (ΔV1), the second potential difference (ΔV2) smaller than the first potential difference (ΔV1) is reduced. Even if the voltage is applied, the suction state of the substrate S can be maintained.

このように、静電チャック２４の電極部に印加される電位差を第２電位差（ΔＶ２）に下げることで、基板Ｓを静電チャック２４から分離するのにかかる時間を短縮することができる。   As described above, by reducing the potential difference applied to the electrode portion of the electrostatic chuck 24 to the second potential difference (ΔV2), it is possible to reduce the time required to separate the substrate S from the electrostatic chuck 24.

つまり、静電チャック２４から基板Ｓを分離しようとする時、静電チャック２４の電極部に加えられる電位差をゼロ（０）にしても、直ちに静電チャック２４と基板Ｓとの間の静電引力が消えるのではなく、静電チャック２４と基板Ｓとの界面に誘導された電荷が消えるのに相当な時間（場合によっては、数分程度）がかかる。特に、静電チャック２４に基板Ｓを吸着させる際は、通常、その吸着を確実にするために、静電チャック２４に基板Ｓを吸着させるのに必要な最小静電引力（Ｆｔｈ）よりも十分に大きい静電引力が作用するように第１電位差（例えば、図５に示したΔＶｍａｘ）を設定するが、このような第１電位差から基板Ｓの分離が可能な状態になるまでは相当な時間がかかる。   That is, when the substrate S is to be separated from the electrostatic chuck 24, even if the potential difference applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic force between the electrostatic chuck 24 and the substrate S is immediately increased. It takes a considerable time (in some cases, about several minutes) for the charges induced at the interface between the electrostatic chuck 24 and the substrate S to disappear, instead of the attraction disappearing. In particular, when the substrate S is attracted to the electrostatic chuck 24, usually, in order to secure the suction, it is more than the minimum electrostatic attraction (Fth) required to attract the substrate S to the electrostatic chuck 24. The first potential difference (eg, ΔVmax shown in FIG. 5) is set so that a large electrostatic attraction acts on the substrate S. However, it takes a considerable time until the substrate S can be separated from such a first potential difference. It takes.

本実施例では、このような静電チャック２４からの基板Ｓの分離にかかる時間により全体的な工程時間（Ｔａｃｔ）が増加してしまうことを防止するために、基板Ｓが静電チャック２４に吸着した後に、所定の時点で、静電チャック２４に印加される電位差を第２電位差に下げる。   In the present embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required to separate the substrate S from the electrostatic chuck 24, the substrate S is attached to the electrostatic chuck 24. At a predetermined time after the suction, the potential difference applied to the electrostatic chuck 24 is reduced to a second potential difference.

図４Ｂに示した実施例では、静電チャック２４の第１吸着部４１〜第３吸着部４３に印加される電位差を同時に第２電位差に下げることと示したが、本発明はこれに限定されず、吸着部別に第２電位差に下げる時点や印加される第２電位差の大きさがそれぞれ異なるようにしてもよい。例えば、第１吸着部４１から第３吸着部４３に向かって順次に第２電位差に下げてもよい。   In the embodiment shown in FIG. 4B, the potential difference applied to the first to third suction portions 41 to 43 of the electrostatic chuck 24 is simultaneously reduced to the second potential difference, but the present invention is not limited to this. Instead, the point of time when the voltage is reduced to the second potential difference and the magnitude of the applied second potential difference may be different for each suction unit. For example, the potential difference may be sequentially reduced from the first suction unit 41 toward the third suction unit 43 to the second potential difference.

このように、静電チャック２４の電極部に印加される電位差が第２電位差に下がった後、静電チャック２４に吸着した基板Ｓとマスク支持ユニット２３上に載置されたマスクＭの相対的位置を調整（アライメント）する。本実施例では、静電チャック２４の電極部に印加される電位差が第２電位差に下がった後に基板ＳとマスクＭと間の相対的な位置調整（アライメント）を行う場合の一例を説明したが、本発明はこれに限定されず、静電チャック２４の電極部に第１電位差が印加されている状態でアライメント工程を行ってもよい。   Thus, after the potential difference applied to the electrode portion of the electrostatic chuck 24 decreases to the second potential difference, the relative position between the substrate S adsorbed on the electrostatic chuck 24 and the mask M placed on the mask support unit 23 is reduced. Adjust the position (alignment). In the present embodiment, an example has been described in which the relative position adjustment (alignment) between the substrate S and the mask M is performed after the potential difference applied to the electrode portion of the electrostatic chuck 24 decreases to the second potential difference. The present invention is not limited to this, and the alignment step may be performed in a state where the first potential difference is applied to the electrode portion of the electrostatic chuck 24.

続いて、図４Ｃに図示したように、静電チャック２４の電極部に第３電位差（ΔＶ３）を印加することで、基板Ｓを介してマスクＭを吸着させる。つまり、静電チャック２４に吸着した基板Ｓの下面にマスクＭを吸着させる。   Subsequently, as shown in FIG. 4C, the mask M is sucked through the substrate S by applying a third potential difference (ΔV3) to the electrode portion of the electrostatic chuck 24. That is, the mask M is attracted to the lower surface of the substrate S that is attracted to the electrostatic chuck 24.

このため、まず、基板Ｓが吸着した静電チャック２４を静電チャックＺアクチュエータ２８によりマスクＭに向かって下降させる。   For this reason, first, the electrostatic chuck 24 on which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28.

静電チャック２４に吸着した基板Ｓの下面がマスクＭに十分に近接又は接触すれば、電
位差制御部３２は、電位差印加部３１が静電チャック２４の電極部に第３電位差（ΔＶ３）を印加するように制御する。 When the lower surface of the substrate S attracted to the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the potential difference control unit 32 applies the third potential difference (ΔV3) to the electrode unit of the electrostatic chuck 24. To control.

第３電位差（ΔＶ３）は、第２電位差（ΔＶ２）よりも大きく、基板Ｓ越しにマスクＭが静電誘導によって帯電できる程度の大きさであることが好ましい。これによって、マスクＭを基板Ｓ越しに静電チャック２４に吸着することができる。ただし、本発明はこれに限定されず、第３電位差（ΔＶ３）は、第２電位差（ΔＶ２）と同じ大きさを有してもよい。第３電位差（ΔＶ３）が第２電位差（ΔＶ２）と同じ大きさを有しても、前述した通り、静電チャック２４の下降によって静電チャック２４または基板ＳとマスクＭとの間の相対的な距離が縮まるので、静電チャック２４の電極部に印加される電位差の大きさを大きくしなくても、基板Ｓに静電誘導された分極電荷によってマスクＭにも静電誘導を起こせることができ、マスクＭを基板Ｓ越しに静電チャック２４に吸着できる程度の吸着力が得られる。   The third potential difference (ΔV3) is preferably larger than the second potential difference (ΔV2), and is large enough to charge the mask M over the substrate S by electrostatic induction. As a result, the mask M can be attracted to the electrostatic chuck 24 over the substrate S. However, the present invention is not limited to this, and the third potential difference (ΔV3) may have the same magnitude as the second potential difference (ΔV2). Even if the third potential difference (ΔV3) has the same magnitude as the second potential difference (ΔV2), the relative movement between the electrostatic chuck 24 or the substrate S and the mask M by the lowering of the electrostatic chuck 24 as described above. The distance can be shortened, so that even if the magnitude of the potential difference applied to the electrode portion of the electrostatic chuck 24 is not increased, the mask M can be induced electrostatically by the polarization charge induced in the substrate S. As a result, an attraction force enough to attract the mask M to the electrostatic chuck 24 over the substrate S is obtained.

第３電位差（ΔＶ３）は、第１電位差（ΔＶ１）よりも小さくしてもよく、工程時間（Ｔａｃｔ）の短縮を考慮して第１電位差（ΔＶ１）と同等な程度の大きさにしてもよい。例えば、第３電位差（ΔＶ３）は、第１電位差（ΔＶ１）以下であってもよい。   The third potential difference ([Delta] V3) may be smaller than the first potential difference ([Delta] V1), or may be as large as the first potential difference ([Delta] V1) in consideration of shortening of the process time (Tact). . For example, the third potential difference (ΔV3) may be equal to or less than the first potential difference (ΔV1).

図４Ｃに図示したマスク吸着工程では、マスクＭにしわが残らずに、マスクＭを基板Ｓの下面に吸着できるように、電位差制御部３２は、第３電位差（ΔＶ３）を静電チャック２４全体にわたって同時に印加するのではなく、静電チャック２４の第１辺に沿って第１吸着部４１から第３吸着部４３に向かって順次に印加する。   In the mask suction step illustrated in FIG. 4C, the potential difference controller 32 applies the third potential difference (ΔV3) to the entire surface of the electrostatic chuck 24 so that the mask M can be attracted to the lower surface of the substrate S without leaving wrinkles on the mask M. Rather than being applied simultaneously, they are applied sequentially from the first suction unit 41 to the third suction unit 43 along the first side of the electrostatic chuck 24.

つまり、図４Ｃに示したように、第１吸着部４１に先に第３電位差が印加され、次いで、第２吸着部４２に第３電位差が印加され、第３吸着部４３には最終的に第３電位差が加えられるように制御する。第１電位差の印加と同様に、例えば、電位差制御部３２は、複数のサブ電極部２４１〜２４９のうち、静電チャック２４の一端のサブ電極部２４１から静電チャック２４の第１辺に沿って静電チャック２４の他端のサブ電極部２４９に向かって順次に、第３電位差が印加されるように制御してもよい。   That is, as shown in FIG. 4C, the third potential difference is applied first to the first suction unit 41, then the third potential difference is applied to the second suction unit 42, and finally the third suction unit 43 Control is performed so that a third potential difference is applied. Similarly to the application of the first potential difference, for example, the potential difference control unit 32 extends along the first side of the electrostatic chuck 24 from the sub electrode unit 241 at one end of the electrostatic chuck 24 among the plurality of sub electrode units 241 to 249. The control may be performed such that the third potential difference is sequentially applied toward the sub-electrode portion 249 at the other end of the electrostatic chuck 24.

これにより、マスクＭの静電チャック２４への吸着は、マスクＭの第１吸着部４１に対応する側からマスクＭの中央部を経て、第３吸着部４３側に向かって、進行し（すなわち、Ｘ方向にマスクＭの吸着が進行し）、マスクＭは、マスクＭの中央部にしわが残ることなく、平らな状態で静電チャック２４に吸着される。したがって、静電チャック２４に吸着されたマスクＭの撓みが低減される。   As a result, the suction of the mask M onto the electrostatic chuck 24 proceeds from the side of the mask M corresponding to the first suction portion 41 to the third suction portion 43 through the central portion of the mask M (that is, toward the third suction portion 43). , The suction of the mask M proceeds in the X direction), and the mask M is suctioned to the electrostatic chuck 24 in a flat state without wrinkles remaining in the central portion of the mask M. Therefore, the deflection of the mask M attracted to the electrostatic chuck 24 is reduced.

本実施形態においては、静電チャック２４がマスクＭに近接或いは接触した状態で第３電位差（ΔＶ３）を印加する場合の一例を説明したが、静電チャック２４がマスクＭに向かって下降を始める前に、或いは、下降の途中に第３電位差（ΔＶ３）を印加してもよい。   In the present embodiment, an example in which the third potential difference (ΔV3) is applied in a state where the electrostatic chuck 24 is close to or in contact with the mask M has been described, but the electrostatic chuck 24 starts descending toward the mask M. The third potential difference (ΔV3) may be applied before or during the descent.

マスクＭの静電チャック２４への吸着工程が完了した後の所定の時点で、電位差制御部３２は、図４Ｄに示したように、静電チャック２４の電極部に印加される電位差を、第３電位差（ΔＶ３）から第３電位差（ΔＶ３）よりも小さい第４電位差（ΔＶ４）に下げる。   At a predetermined point in time after the suction step of the mask M onto the electrostatic chuck 24 is completed, the potential difference control unit 32 determines the potential difference applied to the electrode unit of the electrostatic chuck 24 as shown in FIG. 4D. The third potential difference (ΔV3) is reduced to a fourth potential difference (ΔV4) smaller than the third potential difference (ΔV3).

第４電位差（ΔＶ４）は、静電チャック２４に基板Ｓ越しに吸着されたマスクＭの吸着状態を維持するための吸着維持電位差であり、マスクＭを静電チャック２４に吸着させる時の第３電位差（ΔＶ３）よりも小さい電位差である。静電チャック２４に印加される電位差が第４電位差（ΔＶ４）に下がると、これに対応してマスクＭに誘導される分極電荷
量も、図４Ｄに示したように、第３電位差（ΔＶ３）が加えられた場合に比べて減少するが、マスクＭが一旦第３電位差（ΔＶ３）によって静電チャック２４に吸着された以後は、第３電位差（ΔＶ３）よりも小さい第４電位差（ΔＶ４）を印加してもマスクＭの吸着状態を維持することができる。 The fourth potential difference (ΔV4) is a suction maintaining potential difference for maintaining the suction state of the mask M suctioned over the substrate S by the electrostatic chuck 24, and is the third potential when the mask M is suctioned by the electrostatic chuck 24. The potential difference is smaller than the potential difference (ΔV3). When the potential difference applied to the electrostatic chuck 24 decreases to the fourth potential difference (ΔV4), the amount of polarization charge induced in the mask M corresponding to this decreases, as shown in FIG. 4D, by the third potential difference (ΔV3). However, after the mask M is once attracted to the electrostatic chuck 24 by the third potential difference (ΔV3), a fourth potential difference (ΔV4) smaller than the third potential difference (ΔV3) is generated. Even if the voltage is applied, the suction state of the mask M can be maintained.

このように、静電チャック２４の電極部に印加される電位差を第４電位差（ΔＶ４）に下げることで、基板Ｓを静電チャック２４から分離するのにかかる時間を減らすことができる。   As described above, by reducing the potential difference applied to the electrode portion of the electrostatic chuck 24 to the fourth potential difference (ΔV4), the time required to separate the substrate S from the electrostatic chuck 24 can be reduced.

つまり、静電チャック２４からマスクＭを分離しようとする時、静電チャック２４の電極部に加えられる電位差をゼロ（０）にしても、直ちに静電チャック２４とマスクＭとの間の静電引力が消えるのではなく、基板ＳとマスクＭとの界面に誘導された電荷が消えるのに相当な時間（場合によっては、数分程度）がかかる。特に、静電チャック２４にマスクＭを吸着させる際は、通常、その吸着を確実にし、吸着にかかる時間を短縮するために、十分に大きい電位差を印加するが、このような第３電位差からマスクの分離が可能な状態になるまでは相当な時間がかかる。   That is, when the mask M is to be separated from the electrostatic chuck 24, even if the potential difference applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic potential between the electrostatic chuck 24 and the mask M is immediately increased. It takes a considerable time (in some cases, about several minutes) for the charge induced at the interface between the substrate S and the mask M to disappear, instead of the attraction disappearing. In particular, when the mask M is attracted to the electrostatic chuck 24, a sufficiently large potential difference is usually applied to secure the suction and shorten the time required for the suction. It takes a considerable amount of time until the separation becomes possible.

本実施例では、このような静電チャック２４からのマスクＭの分離にかかる時間により全体的な工程時間（Ｔａｃｔ）が増加してしまうことを防止するために、マスクＭが静電チャック２４に吸着した後に、所定の時点で、静電チャック２４に印加される電位差を第４電位差に下げる。   In this embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required for separating the mask M from the electrostatic chuck 24, the mask M is attached to the electrostatic chuck 24. After the suction, at a predetermined time, the potential difference applied to the electrostatic chuck 24 is reduced to a fourth potential difference.

図４Ｄに図示した実施例では、静電チャック２４の第１吸着部４１〜第３吸着部４３に印加される電位差を同時に第４電位差に下げることにしたが、本発明はこれに限定されず、吸着部別に第４電位差に下げる時点や印加される第４電位差の大きさがそれぞれ異なるようにしてもよい。例えば、第１吸着部４１から第３吸着部４３に向かって順次に第４電位差に下げてもよい。   In the embodiment shown in FIG. 4D, the potential difference applied to the first to third suction portions 41 to 43 of the electrostatic chuck 24 is simultaneously reduced to the fourth potential difference, but the present invention is not limited to this. Alternatively, the point of time when the voltage is lowered to the fourth potential difference and the magnitude of the fourth potential difference to be applied may be different for each suction unit. For example, the potential difference may be sequentially reduced from the first suction unit 41 to the third suction unit 43 to the fourth potential difference.

このようにして、マスクＭが基板Ｓ越しに静電チャック２４に吸着した状態で、蒸発源２５から蒸発された蒸着材料がマスクＭを介して基板Ｓに成膜される成膜工程が行われる。本実施例では、静電チャック２４による静電吸着力でマスクＭを保持する場合の一例を説明したが、本発明はこれに限定されず、静電チャック２４の上部に設置されたマグネット板によって金属製のマスクＭに磁力を印加することで、より確実にマスクＭを基板Ｓに密着させることができる。   In this manner, in a state where the mask M is attracted to the electrostatic chuck 24 over the substrate S, a film forming process is performed in which the evaporation material evaporated from the evaporation source 25 is formed on the substrate S via the mask M. . In this embodiment, an example in which the mask M is held by the electrostatic chucking force of the electrostatic chuck 24 has been described. However, the present invention is not limited to this, and a magnet plate installed on the electrostatic chuck 24 may be used. By applying a magnetic force to the metal mask M, the mask M can be more securely adhered to the substrate S.

以下、図５を参照して、静電チャック２４により基板ＳおよびマスクＭを吸着して保持する過程において、静電チャック２４の電極部またはサブ電極部に印加される電位差の制御について説明する。   Hereinafter, control of the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 in the process of attracting and holding the substrate S and the mask M by the electrostatic chuck 24 will be described with reference to FIG.

まず、基板Ｓを静電チャック２４に吸着させるために、所定の時点（ｔ１）で静電チャック２４の電極部またはサブ電極部に第１電位差（ΔＶ１）を印加する。   First, in order to attract the substrate S to the electrostatic chuck 24, a first potential difference (ΔV1) is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 at a predetermined time (t1).

第１電位差（ΔＶ１）は、基板Ｓを静電チャック２４に吸着させるのに十分な静電吸着力が得られる大きさを有し、静電チャック２４の電極部またはサブ電極部に第１電位差が印加されてから基板Ｓに分極電荷が発生するまでかかる時間を短縮させるために可能な限り大きい電位差であることが好ましい。例えば、電位差印加部３１によって印加可能な最大電位差（ΔＶｍａｘ）を印加してもよい。   The first potential difference (ΔV1) is large enough to obtain an electrostatic attraction force enough to attract the substrate S to the electrostatic chuck 24, and is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24. It is preferable that the potential difference is as large as possible in order to reduce the time required from the application of the electric field to the generation of the polarization charge on the substrate S. For example, the maximum potential difference (ΔVmax) that can be applied by the potential difference applying unit 31 may be applied.

続いて、印加された第１電位差によって基板Ｓに分極電荷が誘導され、基板Ｓが静電チャック２４に十分な静電吸着力で吸着した後（ｔ＝ｔ２）に、静電チャック２４の電極部
またはサブ電極部に印加される電位差を第２電位差（ΔＶ２）に下げる。第２電位差（ΔＶ２）は、基板Ｓが静電チャック２４に吸着した状態を維持できる最も低い電位差（ΔＶｍｉｎ）であればよい。 Subsequently, a polarization charge is induced on the substrate S by the applied first potential difference, and after the substrate S is attracted to the electrostatic chuck 24 with a sufficient electrostatic attraction force (t = t2), the electrodes of the electrostatic chuck 24 are turned off. The potential difference applied to the section or the sub-electrode section is reduced to a second potential difference (ΔV2). The second potential difference (ΔV2) may be the lowest potential difference (ΔVmin) that can maintain the state in which the substrate S is attracted to the electrostatic chuck 24.

続いて、マスクＭを基板Ｓ越しに静電チャック２４に吸着させるために、静電チャック２４の電極部またはサブ電極部に印加される電位差を第３電位差（ΔＶ３）に上げる（ｔ＝ｔ３）。第３電位差（ΔＶ３）は、マスクＭを基板Ｓ越しに静電チャック２４に吸着させるための電位差であるので、第２電位差（ΔＶ２）以上の大きさを有することが好ましく、工程時間を考慮して電位差印加部３１が印加できる最大電位差（ΔＶｍａｘ）であることがより好ましい。   Subsequently, in order to attract the mask M to the electrostatic chuck 24 over the substrate S, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is increased to a third potential difference (ΔV3) (t = t3). . Since the third potential difference (ΔV3) is a potential difference for attracting the mask M to the electrostatic chuck 24 over the substrate S, the third potential difference (ΔV3) is preferably larger than the second potential difference (ΔV2). It is more preferable that the potential difference is the maximum potential difference (ΔVmax) that the potential difference applying unit 31 can apply.

本実施形態では、成膜工程後に基板ＳおよびマスクＭを静電チャック２４から分離するのにかかる時間を短縮するために、静電チャック２４の電極部またはサブ電極部に印加される電位差を第３電位差（ΔＶ３）に維持せず、より小さい第４電位差（ΔＶ４）に下げる（ｔ＝ｔ４）。ただし、マスクＭが基板Ｓ越しに静電チャック２４に吸着した状態を維持するために、第４電位差（ΔＶ４）は、基板Ｓのみが静電チャック２４に吸着された状態を維持するのに必要な第２電位差（ΔＶ２）以上の電位差であることが好ましい。   In the present embodiment, in order to reduce the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is set to the first value. Instead of maintaining the third potential difference (ΔV3), the potential is reduced to a smaller fourth potential difference (ΔV4) (t = t4). However, in order to maintain the state in which the mask M is attracted to the electrostatic chuck 24 over the substrate S, the fourth potential difference (ΔV4) is necessary to maintain the state in which only the substrate S is attracted to the electrostatic chuck 24. It is preferable that the potential difference is equal to or greater than the second potential difference (ΔV2).

成膜工程が完了した後（ｔ５）に、マスクＭを静電チャック２４から分離するために、まず、静電チャック２４の電極部に印加される電位差を、基板Ｓのみの吸着状態が維持可能な電位差（ΔＶｍｉｎ）に下げる（第５電位差）。   After the film forming process is completed (t5), in order to separate the mask M from the electrostatic chuck 24, first, the potential difference applied to the electrode portion of the electrostatic chuck 24 can be maintained in a state where only the substrate S is attracted. Potential difference (ΔVmin) (fifth potential difference).

これによって、マスク（Ｍ）が分離した後、静電チャック２４の電極部に印加される電位差をゼロ（０）に下げるか（すなわち、オフにするか）、反対極性の電位差を印加する（ｔ＝ｔ６）。これにより、基板Ｓに誘導された分極電荷が除去されて、基板Ｓが静電チャック２４から分離できる。   Thus, after the mask (M) is separated, the potential difference applied to the electrode portion of the electrostatic chuck 24 is reduced to zero (0) (that is, turned off), or a potential difference having the opposite polarity is applied (t). = T6). Thereby, the polarization charges induced on the substrate S are removed, and the substrate S can be separated from the electrostatic chuck 24.

基板ＳとマスクＭを静電チャック２４から分離するための他の実施例では、成膜工程が完了した後に、第５電位差に下げる段階を省いて、基板ＳとマスクＭを同時に静電チャック２４から分離する。このために、電位差印加部３１をオフにするか、静電チャック２４の電極部またはサブ電極部に反対極性の電位差を印加する。これにより、基板ＳとマスクＭは同時に静電チャック２４から分離され、以後、別途の機構を使用して基板ＳとマスクＭを分離する。   In another embodiment for separating the substrate S and the mask M from the electrostatic chuck 24, the step of lowering the potential to the fifth potential difference after the film forming process is completed is omitted, and the substrate S and the mask M are simultaneously held on the electrostatic chuck 24. Separate from For this purpose, the potential difference applying unit 31 is turned off, or a potential difference having the opposite polarity is applied to the electrode unit or the sub-electrode unit of the electrostatic chuck 24. As a result, the substrate S and the mask M are simultaneously separated from the electrostatic chuck 24, and thereafter, the substrate S and the mask M are separated using a separate mechanism.

＜成膜プロセス＞
以下、本実施形態による静電チャックの電位差制御を採用した成膜方法について説明する。 <Deposition process>
Hereinafter, a film forming method employing the potential difference control of the electrostatic chuck according to the present embodiment will be described.

真空容器２１内のマスク支持ユニット２３にマスクＭが載置された状態で、搬送室１３の搬送ロボット１４によって成膜装置１１の真空容器２１内に基板Ｓが搬入される。   With the mask M placed on the mask support unit 23 in the vacuum chamber 21, the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13.

真空容器２１内に進入した搬送ロボット１４のハンドが下降し、基板Ｓを基板支持ユニット２２の支持部上に載置する。   The hand of the transfer robot 14 that has entered the vacuum vessel 21 descends, and places the substrate S on the support of the substrate support unit 22.

続いて、静電チャック２４が基板Ｓに向かって下降し、基板Ｓに十分に近接或いは接触した後に、静電チャック２４に第１電位差（ΔＶ１）を印加し、基板Ｓを吸着する。   Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or contacts the substrate S, the first potential difference (ΔV1) is applied to the electrostatic chuck 24 to attract the substrate S.

本発明の一実施形態においては、基板Ｓを静電チャック２４から分離するのに必要な時間を最大限に確保するため、基板Ｓの静電チャック２４への吸着が完了した後に、静電チャック２４に加えられる電位差を第１電位差（ΔＶ１）から第２電位差（ΔＶ２）に下げ
る。静電チャック２４に加えられる電位差を第２電位差（ΔＶ２）に下げても、第１電位差（ΔＶ１）によって基板Ｓに誘導された分極電荷が放電されるまでに時間がかかるため、以降の工程で静電チャック２４による基板Ｓへの吸着力を維持することができる。 In one embodiment of the present invention, in order to maximize the time required to separate the substrate S from the electrostatic chuck 24, the electrostatic chuck is removed after the substrate S has been attracted to the electrostatic chuck 24. 24 is reduced from the first potential difference (ΔV1) to the second potential difference (ΔV2). Even if the potential difference applied to the electrostatic chuck 24 is reduced to the second potential difference (ΔV2), it takes time until the polarized charges induced on the substrate S by the first potential difference (ΔV1) are discharged. The attraction force of the electrostatic chuck 24 to the substrate S can be maintained.

静電チャック２４に基板Ｓが吸着された状態で、基板ＳのマスクＭに対する相対的な位置ずれを計測するため、基板ＳをマスクＭに向かって下降させる。本発明の他の実施形態においては、静電チャック２４に吸着された基板Ｓの下降の過程で基板Ｓが静電チャック２４から脱落することを確実に防止するために、基板Ｓの下降の過程が完了した後（つまり、後述するアライメント工程が開始する直前）に、静電チャック２４に加える電位差を第２電位差（ΔＶ２）に下げる。   In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to surely prevent the substrate S from dropping off from the electrostatic chuck 24 in the process of lowering the substrate S adsorbed on the electrostatic chuck 24, the lowering process of the substrate S is performed. Is completed (that is, immediately before the alignment step described later starts), the potential difference applied to the electrostatic chuck 24 is reduced to the second potential difference (ΔV2).

基板Ｓが計測位置まで下降すると、アライメント用カメラ２０で基板ＳとマスクＭに形成されたアライメントマークを撮影して、基板ＳとマスクＭの相対的な位置ずれを計測する。本発明の他の実施形態では、基板ＳとマスクＭの相対的位置の計測工程の精度をより高めるために、アライメントのための計測工程が完了した後（アライメント工程中）に、静電チャック２４に加えられる電位差を第２電位差に下げる。つまり、静電チャック２４に基板Ｓを第１電位差（ΔＶ１）によって強く吸着させた状態（基板Ｓをより平らに維持した状態）での基板ＳとマスクＭのアライメントマークを撮影することにより、計測工程の精度を上げることができる。   When the substrate S descends to the measurement position, an alignment mark formed on the substrate S and the mask M is photographed by the alignment camera 20, and the relative displacement between the substrate S and the mask M is measured. In another embodiment of the present invention, in order to further improve the accuracy of the measurement process of the relative position between the substrate S and the mask M, the electrostatic chuck 24 is completed after the measurement process for alignment is completed (during the alignment process). Is reduced to a second potential difference. That is, the measurement is performed by photographing the alignment mark between the substrate S and the mask M in a state where the substrate S is strongly attracted to the electrostatic chuck 24 by the first potential difference (ΔV1) (a state in which the substrate S is maintained more flat). The accuracy of the process can be improved.

計測の結果、基板ＳのマスクＭに対する相対的位置ずれが閾値を超えることが判明すれば、静電チャック２４に吸着された状態の基板Ｓを水平方向（ＸＹθ方向）に移動させて、基板ＳをマスクＭに対して、位置調整（アライメント）する。本発明の他の実施形態においては、このような位置調整の工程が完了した後に、静電チャック２４に加えられる電位差を第２電位差（ΔＶ２）に下げる。これによって、アライメント工程全体（相対的な位置計測や位置調整）にわたって精度をより高めることができる。   As a result of the measurement, if it is determined that the relative displacement of the substrate S with respect to the mask M exceeds the threshold value, the substrate S that has been attracted to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction), and Is adjusted (aligned) with respect to the mask M. In another embodiment of the present invention, after such a position adjustment process is completed, the potential difference applied to the electrostatic chuck 24 is reduced to the second potential difference (ΔV2). Thereby, accuracy can be further improved over the entire alignment process (relative position measurement and position adjustment).

アライメント工程の後、マスクＭを基板Ｓ越しに静電チャック２４に吸着させる。このため、静電チャック２４の電極部またはサブ電極部に第２電位差以上の大きさを有する第３電位差（ΔＶ３）を印加する。   After the alignment step, the mask M is attracted to the electrostatic chuck 24 over the substrate S. Therefore, a third potential difference (ΔV3) having a magnitude equal to or larger than the second potential difference is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24.

このようなマスクＭの吸着工程が完了した後、静電チャック２４の電極部またはサブ電極部に印加される電位差を、静電チャック２４に基板ＳとマスクＭが吸着された状態を維持することができる電位差である、第４電位差に下げる。これにより、成膜工程の完了後に基板ＳおよびマスクＭを静電チャック２４から分離するのにかかる時間を短縮することができる。   After the mask M suction step is completed, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is changed to maintain the state in which the substrate S and the mask M are sucked by the electrostatic chuck 24. To a fourth potential difference. Accordingly, the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the completion of the film forming process can be reduced.

続いて、蒸発源２５のシャッタを開け、蒸着材料をマスクＭを介して基板Ｓに蒸着させる。   Subsequently, the shutter of the evaporation source 25 is opened, and the evaporation material is evaporated on the substrate S via the mask M.

所望の厚さの蒸着材料を基板Ｓに蒸着した後、静電チャック２４の電極部またはサブ電極部に印加される電位差を第５電位差に下げてマスクＭを分離し、静電チャック２４に基板Ｓのみが吸着した状態で、静電チャックＺアクチュエータ２８により、基板Ｓを上昇させる。   After depositing a vapor deposition material having a desired thickness on the substrate S, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to a fifth potential difference, the mask M is separated, and the substrate is placed on the electrostatic chuck 24. The substrate S is raised by the electrostatic chuck Z actuator 28 in a state where only S is sucked.

続いて、搬送ロボット１４のハンドが成膜装置１１の真空容器２１内に進入し、静電チャック２４の電極部或いはサブ電極部にゼロ（０）または逆極性の電位差が印加され（ｔ６）、静電チャック２４が基板Ｓから分離されて上昇する。その後、蒸着が完了した基板Ｓを搬送ロボット１４によって真空容器２１から搬出する。   Subsequently, the hand of the transfer robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, and a potential difference of zero (0) or reverse polarity is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 (t6). The electrostatic chuck 24 is separated from the substrate S and rises. Thereafter, the substrate S on which the vapor deposition has been completed is carried out of the vacuum vessel 21 by the transfer robot 14.

＜電子デバイスの製造方法＞
次に、本実施形態の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機ＥＬ表示装置の構成及び製造方法を例示する。 <Electronic device manufacturing method>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be described as an example of an electronic device.

まず、製造する有機ＥＬ表示装置について説明する。図６（ａ）は有機ＥＬ表示装置６０の全体図、図６（ｂ）は１画素の断面構造を表している。   First, an organic EL display device to be manufactured will be described. FIG. 6A shows an overall view of the organic EL display device 60, and FIG. 6B shows a sectional structure of one pixel.

図６（ａ）に示すように、有機ＥＬ表示装置６０の表示領域６１には、発光素子を複数備える画素６２がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域６１において所望の色の表示を可能とする最小単位を指している。本実施例にかかる有機ＥＬ表示装置の場合、互いに異なる発光を示す第１発光素子６２Ｒ、第２発光素子６２Ｇ、第３発光素子６２Ｂの組合せにより画素６２が構成されている。画素６２は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも１色以上であれば特に制限されるものではない。   As shown in FIG. 6A, in a display area 61 of the organic EL display device 60, a plurality of pixels 62 having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B which emit light different from each other. The pixel 62 is often formed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. There is no restriction.

図６（ｂ）は、図６（ａ）のＡ−Ｂ線における部分断面模式図である。画素６２は、基板６３上に、陽極６４と、正孔輸送層６５と、発光層６６Ｒ、６６Ｇ、６６Ｂのいずれかと、電子輸送層６７と、陰極６８と、を備える有機ＥＬ素子を有している。これらのうち、正孔輸送層６５、発光層６６Ｒ、６６Ｇ、６６Ｂ、電子輸送層６７が有機層に相当する。また、本実施形態では、発光層６６Ｒは赤色を発する有機ＥＬ層、発光層６６Ｇは緑色を発する有機ＥＬ層、発光層６６Ｂは青色を発する有機ＥＬ層である。発光層６６Ｒ、６６Ｇ、６６Ｂは、それぞれ赤色、緑色、青色を発する発光素子（有機ＥＬ素子と記述する場合もある）に対応するパターンに形成されている。また、陽極６４は、発光素子ごとに分離して形成されている。正孔輸送層６５と電子輸送層６７と陰極６８は、複数の発光素子６２Ｒ、６２Ｇ、６２Ｂと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、陽極６４と陰極６８とが異物によってショートするのを防ぐために、複数の陽極６４間に絶縁層６９が設けられている。さらに、有機ＥＬ層は水分や酸素によって劣化するため、水分や酸素から有機ＥＬ素子を保護するための保護層７０が設けられている。   FIG. 6B is a schematic partial cross-sectional view taken along line AB in FIG. 6A. The pixel 62 includes, on a substrate 63, an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68. I have. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. In the present embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green light, and the light emitting layer 66B is an organic EL layer emitting blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements that emit red, green, and blue light (which may be referred to as organic EL elements). The anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. Note that an insulating layer 69 is provided between the plurality of anodes 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture or oxygen is provided.

図６（ｂ）では正孔輸送層６５や電子輸送層６７が一つの層で示されているが、有機ＥＬ表示素子の構造によって、正孔ブロック層や電子ブロック層を含む複数の層で形成されてもよい。また、陽極６４と正孔輸送層６５との間には陽極６４から正孔輸送層６５への正孔の注入が円滑に行われるようにすることのできるエネルギーバンド構造を有する正孔注入層を形成することもできる。同様に、陰極６８と電子輸送層６７の間にも電子注入層を形成することができる。   In FIG. 6B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer. However, depending on the structure of the organic EL display element, the hole transport layer 65 and the electron transport layer 67 are formed of a plurality of layers including a hole block layer and an electron block layer. May be done. Further, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

次に、有機ＥＬ表示装置の製造方法の例について具体的に説明する。
まず、有機ＥＬ表示装置を駆動するための回路（不図示）および陽極６４が形成された基板６３を準備する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and the anode 64 are formed is prepared.

陽極６４が形成された基板６３の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、陽極６４が形成された部分に開口部が形成されるようにパターニングして絶縁層６９を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。   An acrylic resin is formed on the substrate 63 on which the anode 64 is formed by spin coating, and the acrylic resin is patterned by lithography so that an opening is formed in a portion where the anode 64 is formed, thereby forming the insulating layer 69. Form. This opening corresponds to a light emitting area where the light emitting element actually emits light.

絶縁層６９がパターニングされた基板６３を第１の有機材料成膜装置に搬入し、基板支持ユニット及び静電チャックにて基板６３を保持し、正孔輸送層６５を、表示領域の陽極
６４の上に共通する層として成膜する。正孔輸送層６５は真空蒸着により成膜される。実際には正孔輸送層６５は表示領域６１よりも大きなサイズに形成されるため、高精細なマスクは不要である。 The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate 63 is held by the substrate support unit and the electrostatic chuck, and the hole transport layer 65 is connected to the anode 64 in the display area. A film is formed thereon as a common layer. The hole transport layer 65 is formed by vacuum evaporation. Actually, since the hole transport layer 65 is formed in a size larger than the display area 61, a high-definition mask is unnecessary.

次に、正孔輸送層６５までが形成された基板６３を第２の有機材料成膜装置に搬入し、基板支持ユニット及び静電チャックにて保持する。基板６３とマスクとのアライメントを行い、基板６３をマスクの上に載置し、基板６３の赤色を発する素子を配置する部分に、赤色を発する発光層６６Ｒを成膜する。   Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus, and is held by the substrate support unit and the electrostatic chuck. The alignment between the substrate 63 and the mask is performed, the substrate 63 is placed on the mask, and a red light emitting layer 66R is formed on a portion of the substrate 63 where a red light emitting element is arranged.

発光層６６Ｒの成膜と同様に、第３の有機材料成膜装置により緑色を発する発光層６６Ｇを成膜し、さらに第４の有機材料成膜装置により青色を発する発光層６６Ｂを成膜する。発光層６６Ｒ、６６Ｇ、６６Ｂの成膜が完了した後、第５の成膜装置により表示領域６１の全体に電子輸送層６７を成膜する。電子輸送層６７は、３色の発光層６６Ｒ、６６Ｇ、６６Ｂに共通の層として形成される。   Similarly to the formation of the light emitting layer 66R, the third organic material film forming apparatus forms a green light emitting layer 66G, and the fourth organic material forming apparatus forms a blue light emitting layer 66B. . After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

電子輸送層６７まで形成された基板６３を金属性蒸着材料成膜装置で移動させて陰極６８を成膜する。   The substrate 63 on which the electron transport layer 67 has been formed is moved by a metal deposition material film forming apparatus to form a cathode 68.

本発明によると、基板とマスクを静電チャック２４に吸着させた後、所定の時点で静電チャック２４に印加する電位差をあらかじめ下げておくことによって、基板及び/又はマ
スクを静電チャック２４から分離するのにかかる時間を短縮し、工程時間を減らすことができる。 According to the present invention, after the substrate and the mask are attracted to the electrostatic chuck 24, the substrate and / or the mask can be removed from the electrostatic chuck 24 by previously reducing the potential difference applied to the electrostatic chuck 24 at a predetermined time. The time required for separation can be reduced, and the process time can be reduced.

その後プラズマＣＶＤ装置に移動して保護層７０を成膜して、有機ＥＬ表示装置６０が完成する。   After that, the organic EL display device 60 is completed by moving to a plasma CVD device to form the protective layer 70.

絶縁層６９がパターニングされた基板６３を成膜装置に搬入してから保護層７０の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機ＥＬ材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本実施例において、成膜装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。   If the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and is exposed to an atmosphere containing moisture or oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material becomes It may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the transfer of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

上記実施例は本発明の一例を示したものでしかなく、本発明は上記実施例の構成に限定されず、その技術思想の範囲内で適宜変形してもよい。   The above embodiment is merely an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

１:クラスタ装置
１１:成膜装置
１２:マスクストック装置
１３:搬送室
１４:搬送ロボット
２０:アライメント用カメラ
２１:真空容器
２２:基板支持ユニット
２３:マスク支持ユニット
２４:静電チャック
２５:蒸発源
２８:静電チャックＺアクチュエータ
２９:位置調整機構
３０:静電チャックシステム
３１:電位差印加部
３２:電位差制御部
３３:電極対
４１〜４３:第１吸着部〜第３吸着部
２４１〜２４９:サブ電極部
３３１:第１電極
３３２:第２電極 1: Cluster device 11: Film forming device 12: Mask stock device 13: Transfer chamber 14: Transfer robot 20: Alignment camera 21: Vacuum container 22: Substrate support unit 23: Mask support unit 24: Electrostatic chuck 25: Evaporation source 28: electrostatic chuck Z actuator 29: position adjustment mechanism 30: electrostatic chuck system 31: potential difference applying unit 32: potential difference control unit 33: electrode pairs 41 to 43: first to third suction units 241 to 249: sub Electrode part 331: first electrode 332: second electrode

Claims (26)

被吸着体を吸着するための静電チャックシステムであって、
電極部を含む静電チャックと、
前記静電チャックの前記電極部に電位差を印加するための電位差印加部と、
前記電位差印加部による電位差の印加を制御するための電位差制御部とを含み、
前記電位差制御部は、第１被吸着体を前記静電チャックに吸着させるための第１電位差、前記第１電位差よりも小さい第２電位差、及び前記静電チャックに前記第１被吸着体を介して、第２被吸着体を吸着するための第３電位差が前記電極部に順次に印加されるように制御し、
前記第３電位差は、前記第２電位差以上であることを特徴とする静電チャックシステム。 An electrostatic chuck system for adsorbing an object to be adsorbed,
An electrostatic chuck including an electrode part,
A potential difference applying unit for applying a potential difference to the electrode unit of the electrostatic chuck,
Including a potential difference control unit for controlling the application of a potential difference by the potential difference application unit,
The potential difference control unit includes a first potential difference for causing the first chuck to be attached to the electrostatic chuck, a second potential difference smaller than the first potential difference, and the electrostatic chuck via the first chuck. Controlling the third potential difference for adsorbing the second object to be sequentially applied to the electrode unit;
The said 3rd electric potential difference is more than the said 2nd electric potential difference, The electrostatic chuck system characterized by the above-mentioned. 前記第３電位差は、前記第１電位差以下であることを特徴とする請求項１に記載の静電チャックシステム。   The electrostatic chuck system according to claim 1, wherein the third potential difference is equal to or less than the first potential difference. 前記電位差制御部は、前記第３電位差の印加以後に、第４電位差が前記電極部に印加されるように制御することを特徴とする請求項１又は請求項２に記載の静電チャックシステム。   3. The electrostatic chuck system according to claim 1, wherein the potential difference control unit controls so that a fourth potential difference is applied to the electrode unit after the application of the third potential difference. 4. 前記第４電位差は、前記第３電位差よりも小さいことを特徴とする請求項３に記載の静電チャックシステム。   The electrostatic chuck system according to claim 3, wherein the fourth potential difference is smaller than the third potential difference. 前記第４電位差は、前記第２電位差以上であることを特徴とする請求項３又は請求項４に記載の静電チャックシステム。   The electrostatic chuck system according to claim 3, wherein the fourth potential difference is equal to or greater than the second potential difference. 前記電極部は、前記静電チャックの第１辺に沿って分割された複数のサブ電極部を含むことを特徴とする請求項１〜請求項５の何れか一項に記載の静電チャックシステム。   6. The electrostatic chuck system according to claim 1, wherein the electrode unit includes a plurality of sub-electrode units divided along a first side of the electrostatic chuck. 7. . 前記電位差制御部は、前記複数のサブ電極部のうち、前記静電チャックの一端のサブ電極部から前記第１辺に沿って前記静電チャックの他端のサブ電極部に向かって順次に、前記第１電位差が印加されるように制御することを特徴とする請求項６に記載の静電チャックシステム。   The potential difference control unit, among the plurality of sub-electrodes, sequentially from the sub-electrode at one end of the electrostatic chuck toward the sub-electrode at the other end of the electrostatic chuck along the first side, The electrostatic chuck system according to claim 6, wherein control is performed such that the first potential difference is applied. 前記電位差制御部は、前記複数のサブ電極部のうち、前記静電チャックの一端のサブ電極部から前記第１辺に沿って前記静電チャックの他端のサブ電極部に向かって順次に、前記第３電位差が印加されるように制御することを特徴とする請求項６又は請求項７に記載の静電チャックシステム。   The potential difference control unit, among the plurality of sub-electrodes, sequentially from the sub-electrode at one end of the electrostatic chuck toward the sub-electrode at the other end of the electrostatic chuck along the first side, The electrostatic chuck system according to claim 6, wherein control is performed such that the third potential difference is applied. 前記電極部は、第１極性の電位が印加される櫛形状の第１電極と、前記第１極性と反対極性の電位が印加される櫛形状の第２電極とを含み、櫛形状の前記第１電極の各櫛歯部と櫛形状の前記第２電極の各櫛歯部とは交互に配置されることを特徴とする請求項１〜請求項８の何れか一項に記載の静電チャックシステム。   The electrode portion includes a comb-shaped first electrode to which a first polarity potential is applied, and a comb-shaped second electrode to which a potential having a polarity opposite to the first polarity is applied. The electrostatic chuck according to any one of claims 1 to 8, wherein each comb tooth of one electrode and each comb tooth of the comb-shaped second electrode are alternately arranged. system. 基板にマスクを介して成膜を行うための成膜装置であって、
第１被吸着体である基板と第２被吸着体であるマスクを吸着するための静電チャックシステムを含み、
前記静電チャックシステムは、請求項１〜請求項９の何れか一項に記載の静電チャックシステムであることを特徴とする成膜装置。 A film forming apparatus for forming a film on a substrate via a mask,
An electrostatic chuck system for adsorbing a substrate that is a first object to be adsorbed and a mask that is a second object to be adsorbed,
The film forming apparatus according to claim 1, wherein the electrostatic chuck system is the electrostatic chuck system according to claim 1. 被吸着体を吸着するための吸着方法であって、
静電チャックの電極部に第１電位差を印加して第１被吸着体を静電チャックに吸着する工程と、
前記電極部に前記第１電位差よりも小さい第２電位差を印加する工程と、
前記電極部に前記第２電位差以上の第３電位差を印加して、前記静電チャックに前記第１被吸着体を介して前記第２被吸着体を吸着する工程とを含むことを特徴とする吸着方法。 An adsorption method for adsorbing an object to be adsorbed,
A step of applying a first potential difference to an electrode portion of the electrostatic chuck to attract the first object to be attracted to the electrostatic chuck;
Applying a second potential difference smaller than the first potential difference to the electrode unit;
Applying a third potential difference equal to or greater than the second potential difference to the electrode portion, and adsorbing the second object to be attracted to the electrostatic chuck via the first object to be adsorbed. Adsorption method. 前記第３電位差は、前記第１電位差以下であることを特徴とする請求項１１に記載の吸着方法。   The method according to claim 11, wherein the third potential difference is equal to or less than the first potential difference. 前記第２電位差を印加する工程と前記第２被吸着体を吸着する工程との間に、前記第１被吸着体と前記第２被吸着体との間の距離が縮まるように、前記第１被吸着体と前記第２被吸着体を相対的に移動させる工程をさらに含むことを特徴とする請求項１１又は請求項１２に記載の吸着方法。   Between the step of applying the second potential difference and the step of adsorbing the second adsorbent, the first and second adsorbents are reduced so that the distance between the first and second adsorbents is reduced. 13. The adsorption method according to claim 11, further comprising a step of relatively moving the object to be adsorbed and the second object to be adsorbed. 前記第２被吸着体を吸着する工程以後に、前記第３電位差よりも小さい第４電位差を前記電極部に印加する工程をさらに含むことを特徴とする請求項１１〜請求項１３の何れか一項に記載の吸着方法。   The method according to any one of claims 11 to 13, further comprising a step of applying a fourth potential difference smaller than the third potential difference to the electrode unit after the step of adsorbing the second object. The adsorption method described in the paragraph. 前記第４電位差は前記第２電位差以上であることを特徴とする請求項１４に記載の吸着方法。   The method according to claim 14, wherein the fourth potential difference is equal to or greater than the second potential difference. 前記第１被吸着体を吸着する工程において、前記静電チャックの第１辺に沿って分割された複数のサブ電極部のうち、前記静電チャックの一端のサブ電極部から前記第１辺に沿って前記静電チャックの他端のサブ電極部に向かって順次に、前記第１電位差が印加されることを特徴とする請求項１１〜請求項１５の何れか一項に記載の吸着方法。   In the step of adsorbing the first object, the sub-electrode portion at one end of the electrostatic chuck is connected to the first side of the plurality of sub-electrode portions divided along the first side of the electrostatic chuck. The suction method according to any one of claims 11 to 15, wherein the first potential difference is sequentially applied to the sub-electrode portion at the other end of the electrostatic chuck. 前記第２被吸着体を吸着する工程において、前記静電チャックの第１辺に沿って分割された複数のサブ電極部のうち、前記静電チャックの一端のサブ電極部から前記第１辺に沿って前記静電チャックの他端のサブ電極部に向かって順次に、前記第３電位差が印加されることを特徴とする請求項１１〜請求項１６の何れか一項に記載の吸着方法。   In the step of adsorbing the second adsorbent, the sub-electrode portion at one end of the electrostatic chuck is connected to the first side of the plurality of sub-electrode portions divided along the first side of the electrostatic chuck. The suction method according to any one of claims 11 to 16, wherein the third potential difference is sequentially applied along a sub-electrode portion at the other end of the electrostatic chuck. 基板にマスクを介して蒸着材料を成膜する成膜方法であって、
真空容器内にマスクを搬入する工程と、
前記真空容器内に基板を搬入する工程と、
静電チャックの電極部に第１電位差を印加して、前記基板を前記静電チャックに吸着する工程と、
前記電極部に前記第１電位差よりも小さい第２電位差を印加する工程と、
前記電極部に前記第２電位差以上の第３電位差を印加して、前記静電チャックに前記基板を介して前記マスクを吸着する工程と、
前記静電チャックに前記基板と前記マスクが吸着した状態で、蒸着材料を蒸発させ、前記マスクを介して前記基板に前記蒸着材料を成膜する工程とを含むことを特徴とする成膜方法。 A film forming method for forming a deposition material on a substrate via a mask,
Loading a mask into the vacuum vessel;
Loading a substrate into the vacuum vessel;
Applying a first potential difference to the electrode portion of the electrostatic chuck to attract the substrate to the electrostatic chuck;
Applying a second potential difference smaller than the first potential difference to the electrode unit;
Applying a third potential difference greater than or equal to the second potential difference to the electrode unit, and adsorbing the mask on the electrostatic chuck via the substrate;
A step of evaporating an evaporation material in a state where the substrate and the mask are attracted to the electrostatic chuck, and forming the evaporation material on the substrate via the mask. 前記第３電位差は、前記第１電位差以下であることを特徴とする請求項１８に記載の成膜方法。   19. The method according to claim 18, wherein the third potential difference is equal to or less than the first potential difference. 前記基板を吸着する工程と前記マスクを吸着する工程との間に、前記基板と前記マスクとの相対的位置を調整する工程をさらに含むことを特徴とする請求項１８又は請求項１９
に記載の成膜方法。 20. The method according to claim 18, further comprising, between the step of adsorbing the substrate and the step of adsorbing the mask, adjusting a relative position between the substrate and the mask.
3. The film forming method according to item 1. 前記第２電位差を印加する工程と前記マスクを吸着する工程との間に、前記基板と前記マスクとの間の距離が縮まるように、前記基板と前記マスクを相対的に移動させる工程をさらに含むことを特徴とする請求項１８〜請求項２０の何れか一項に記載の成膜方法。   The method further includes, between the step of applying the second potential difference and the step of adsorbing the mask, a step of relatively moving the substrate and the mask such that a distance between the substrate and the mask is reduced. The film forming method according to any one of claims 18 to 20, wherein: 前記マスクを吸着する工程以後に、前記第３電位差よりも小さい第４電位差を前記電極部に印加する工程をさらに含むことを特徴とする請求項１８〜請求項２１の何れか一項に記載の成膜方法。   22. The method according to claim 18, further comprising, after the step of adsorbing the mask, applying a fourth potential difference smaller than the third potential difference to the electrode unit. Film formation method. 前記第４電位差は、前記第２電位差以上であることを特徴とする請求項２２に記載の成膜方法。   23. The method according to claim 22, wherein the fourth potential difference is equal to or greater than the second potential difference. 前記基板を吸着する工程において、前記静電チャックの第１辺に沿って分割された複数のサブ電極部のうち、前記静電チャックの一端のサブ電極部から前記第１辺に沿って前記静電チャックの他端のサブ電極部に向かって順次に、前記第１電位差が印加されることを特徴とする請求項１８〜請求項２３の何れか一項に記載の成膜方法。   In the step of adsorbing the substrate, of the plurality of sub-electrode portions divided along the first side of the electrostatic chuck, the static electrode is arranged along the first side from the sub-electrode portion at one end of the electrostatic chuck. The film forming method according to any one of claims 18 to 23, wherein the first potential difference is sequentially applied toward the sub-electrode portion at the other end of the electric chuck. 前記マスクを吸着する工程において、前記静電チャックの第１辺に沿って分割された複数のサブ電極部のうち、前記静電チャックの一端のサブ電極部から前記第１辺に沿って前記静電チャックの他端のサブ電極部に向かって順次に、前記第３電位差が印加されることを特徴とする請求項１８〜請求項２４の何れか一項に記載の成膜方法。   In the step of adsorbing the mask, of the plurality of sub-electrode portions divided along the first side of the electrostatic chuck, the static electrode along the first side from the sub-electrode portion at one end of the electrostatic chuck. The film forming method according to any one of claims 18 to 24, wherein the third potential difference is sequentially applied toward a sub-electrode portion at the other end of the electric chuck. 請求項１８〜請求項２５の何れか一項の成膜方法を用いて、電子デバイスを製造することを特徴とする電子デバイスの製造方法。   An electronic device manufacturing method, comprising manufacturing an electronic device by using the film forming method according to any one of claims 18 to 25.
JP2018221716A 2018-06-11 2018-11-27 Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and electronic device manufacturing method Active JP7278541B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0066582 2018-06-11
KR1020180066582A KR102427823B1 (en) 2018-06-11 2018-06-11 Electrostatic chuck system, film forming apparatus, adsorption process, film forming method and electronic device manufacturing method

Publications (3)

Publication Number Publication Date
JP2019216230A true JP2019216230A (en) 2019-12-19
JP2019216230A5 JP2019216230A5 (en) 2022-01-06
JP7278541B2 JP7278541B2 (en) 2023-05-22

Family

ID=68810467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018221716A Active JP7278541B2 (en) 2018-06-11 2018-11-27 Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and electronic device manufacturing method

Country Status (3)

Country Link
JP (1) JP7278541B2 (en)
KR (1) KR102427823B1 (en)
CN (1) CN110578118A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021100107A (en) * 2019-12-23 2021-07-01 キヤノントッキ株式会社 Film forming device, film forming method, and manufacturing method of electronic device
JP2021098883A (en) * 2019-12-20 2021-07-01 キヤノントッキ株式会社 Film deposition apparatus, film deposition method using the same and manufacturing method of electronic device
CN113093416A (en) * 2021-04-02 2021-07-09 曲面超精密光电(深圳)有限公司 Method and equipment for full lamination of planes with ultra-long aspect ratio
CN113106395A (en) * 2019-12-24 2021-07-13 佳能特机株式会社 Film forming apparatus, electronic device manufacturing apparatus, film forming method, and electronic device manufacturing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102411995B1 (en) * 2018-09-21 2022-06-21 캐논 톡키 가부시키가이샤 Electrostatic chuk system, apparatus for forming film, adsorption and separation method, method for forming film, and manufacturing method of electronic device
CN113005403B (en) * 2019-12-20 2023-06-20 佳能特机株式会社 Film forming apparatus, film forming method using the same, and method for manufacturing electronic device
CN113005398B (en) * 2019-12-20 2023-04-07 佳能特机株式会社 Film forming apparatus, film forming method, and method for manufacturing electronic device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204325A (en) * 1992-12-28 1994-07-22 Hitachi Ltd Electrostatic attraction device and its method
JP2005116849A (en) * 2003-10-09 2005-04-28 Canon Inc Electrostatic adsorption device and method therefor, exposure device, and device manufacturing method
JP2007251083A (en) * 2006-03-20 2007-09-27 Mitsubishi Heavy Ind Ltd Electrostatic attraction device for glass substrate and attraction secession method therefor
JP2014065959A (en) * 2012-09-27 2014-04-17 Hitachi High-Technologies Corp Vapor deposition apparatus, and installation method for vapor deposition apparatus
JP2016539489A (en) * 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Substrate carrier with integrated electrostatic chuck
JP2017516294A (en) * 2014-05-09 2017-06-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Substrate carrier system and method for using the same
JP2017155338A (en) * 2016-03-03 2017-09-07 エルジー ディスプレイ カンパニー リミテッド Vapor deposition apparatus for organic light-emitting element

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3805134B2 (en) * 1999-05-25 2006-08-02 東陶機器株式会社 Electrostatic chuck for insulating substrate adsorption
JP4647122B2 (en) * 2001-03-19 2011-03-09 株式会社アルバック Vacuum processing method
EP1359466A1 (en) * 2002-05-01 2003-11-05 ASML Netherlands B.V. Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method
DE102008037387A1 (en) * 2008-09-24 2010-03-25 Aixtron Ag Method and device for depositing laterally structured layers by means of a shadow mask held magnetically on a substrate holder
JP2011195907A (en) 2010-03-19 2011-10-06 Tokyo Electron Ltd Mask holding device and thin film forming device
US9463543B2 (en) 2014-06-02 2016-10-11 Applied Materials, Inc. Electromagnetic chuck for OLED mask chucking
KR102235605B1 (en) * 2014-10-08 2021-04-06 삼성디스플레이 주식회사 Deposition apparatus and deposition method using the same
KR102083443B1 (en) * 2015-04-15 2020-03-02 가부시키가이샤 알박 Substrate holding mechanism, film forming apparatus, and substrate holding method
KR102586049B1 (en) * 2015-11-13 2023-10-10 삼성디스플레이 주식회사 Mask frame assembly, apparatus for manufacturing display apparatus and method of manufacturing display apparatus
KR102490641B1 (en) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 Deposition device and depositing method
JP6351918B2 (en) * 2016-06-24 2018-07-04 キヤノントッキ株式会社 Substrate mounting method, film forming method, and electronic device manufacturing method
CN107856041B (en) * 2016-09-22 2021-04-20 欣兴电子股份有限公司 Suction cup device and element transfer method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204325A (en) * 1992-12-28 1994-07-22 Hitachi Ltd Electrostatic attraction device and its method
JP2005116849A (en) * 2003-10-09 2005-04-28 Canon Inc Electrostatic adsorption device and method therefor, exposure device, and device manufacturing method
JP2007251083A (en) * 2006-03-20 2007-09-27 Mitsubishi Heavy Ind Ltd Electrostatic attraction device for glass substrate and attraction secession method therefor
JP2014065959A (en) * 2012-09-27 2014-04-17 Hitachi High-Technologies Corp Vapor deposition apparatus, and installation method for vapor deposition apparatus
JP2016539489A (en) * 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Substrate carrier with integrated electrostatic chuck
JP2017516294A (en) * 2014-05-09 2017-06-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Substrate carrier system and method for using the same
JP2017155338A (en) * 2016-03-03 2017-09-07 エルジー ディスプレイ カンパニー リミテッド Vapor deposition apparatus for organic light-emitting element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021098883A (en) * 2019-12-20 2021-07-01 キヤノントッキ株式会社 Film deposition apparatus, film deposition method using the same and manufacturing method of electronic device
JP7024044B2 (en) 2019-12-20 2022-02-22 キヤノントッキ株式会社 Film forming equipment, film forming method using this, and manufacturing method of electronic devices
JP2021100107A (en) * 2019-12-23 2021-07-01 キヤノントッキ株式会社 Film forming device, film forming method, and manufacturing method of electronic device
CN113106395A (en) * 2019-12-24 2021-07-13 佳能特机株式会社 Film forming apparatus, electronic device manufacturing apparatus, film forming method, and electronic device manufacturing method
CN113106395B (en) * 2019-12-24 2023-08-15 佳能特机株式会社 Film forming apparatus, electronic device manufacturing apparatus, film forming method, and electronic device manufacturing method
CN113093416A (en) * 2021-04-02 2021-07-09 曲面超精密光电(深圳)有限公司 Method and equipment for full lamination of planes with ultra-long aspect ratio
CN113093416B (en) * 2021-04-02 2024-04-12 曲面超精密光电(深圳)有限公司 Super-aspect ratio plane full-lamination method and equipment thereof

Also Published As

Publication number Publication date
KR20190140156A (en) 2019-12-19
CN110578118A (en) 2019-12-17
JP7278541B2 (en) 2023-05-22
KR102427823B1 (en) 2022-07-29

Similar Documents

Publication Publication Date Title
JP7278541B2 (en) Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and electronic device manufacturing method
CN111128828B (en) Adsorption and alignment method, adsorption system, film forming method and apparatus, and method for manufacturing electronic device
KR102459872B1 (en) Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device
KR102505832B1 (en) Adsorption apparatus, position adjusting method, and method for forming film
KR102430370B1 (en) Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device
KR102419064B1 (en) Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device
KR102421610B1 (en) Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device
JP2020050952A (en) Electrostatic chuck system, film deposition device, adsorbed body separation method, film deposition method, and electronic device manufacturing method
KR102085446B1 (en) Electrostatic chuk system, apparatus for forming film, separation method of attracted body, method for forming film, and manufacturing method of electronic device
KR102411995B1 (en) Electrostatic chuk system, apparatus for forming film, adsorption and separation method, method for forming film, and manufacturing method of electronic device
KR102085447B1 (en) Electrostatic chuk system, apparatus for forming film, separation method of attracted body, method for forming film, and manufacturing method of electronic device
JP7224167B2 (en) Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and electronic device manufacturing method
JP2020053684A (en) Electrostatic chuck system, deposition device, adsorbed body separation method, deposition method and manufacturing method for electronic device
KR20210080802A (en) Film forming apparatus, film forming method and manufacturing method of electronic device
CN111118444A (en) Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and method for manufacturing electronic device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211122

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221021

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230404

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230426

R150 Certificate of patent or registration of utility model

Ref document number: 7278541

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150