JP2019189901A - Vacuum evaporation device - Google Patents

Vacuum evaporation device Download PDF

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JP2019189901A
JP2019189901A JP2018082553A JP2018082553A JP2019189901A JP 2019189901 A JP2019189901 A JP 2019189901A JP 2018082553 A JP2018082553 A JP 2018082553A JP 2018082553 A JP2018082553 A JP 2018082553A JP 2019189901 A JP2019189901 A JP 2019189901A
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vapor deposition
vacuum
evaporation
plate
vacuum chamber
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JP7092543B2 (en
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政司 梅原
Seiji Umehara
政司 梅原
僚也 北沢
Ryoya KITAZAWA
僚也 北沢
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Ulvac Inc
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Ulvac Inc
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Abstract

To provide a vacuum evaporation device having a regulation plate which suppresses blocking of a scattering path toward an evaporation object of a sublimated or vaporized evaporation material as much as possible, even if the evaporation material is adhered and deposited.SOLUTION: A vacuum evaporation device DM includes an evaporation source 4 in a vacuum chamber 1, sublimates or evaporates an evaporation material 5 by the evaporation source in a vacuum atmosphere, and deposits the sublimated or evaporated evaporation material on an evaporation object. The vacuum evaporation device further includes a regulation plate 7 which regulates a scattering range of the evaporation material scattering from the evaporation source to an evaporation material Sw by being cantilevered by a support body 6 provided in the vacuum chamber, wherein while one face directed to the evaporation source side of the regulation plate is defined as a bottom face 71 and the other face thereof is defined as a top face 72, an inclined plane 73 is formed crossing with the bottom face at an obtuse angle α1, and with a top face edge at an acute angle α2 at a free end of the regulation plate.SELECTED DRAWING: Figure 2

Description

本発明は、真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する真空蒸着装置に関し、より詳しくは、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備えるものに関する。   The present invention relates to a vacuum vapor deposition apparatus that includes a vapor deposition source in a vacuum chamber, sublimates or vaporizes the vapor deposition material with the vapor deposition source in a vacuum atmosphere, and deposits the sublimated or vaporized vapor deposition material on a deposition object. Specifically, the present invention relates to a device further including a regulating plate that regulates a scattering range of a vapor deposition material that scatters from a vapor deposition source toward a deposition target.

この種の真空蒸着装置は例えば特許文献１で知られている。このものは、真空チャンバを有し、真空チャンバの底部には、成膜しようとする薄膜に応じて適宜選択される蒸着物質が収容される蒸着源としてのルツボが配置されている。そして、真空雰囲気中の真空チャンバ内で一方向に所定速度で被蒸着物を移動させながら、蒸着源にて蒸着物質を加熱することで昇華または気化させ、この昇華または気化した、蒸着源から飛散する蒸着物質を被蒸着物に付着、堆積させて所定膜厚の薄膜が蒸着されるようにしている。このとき、真空チャンバ内で被蒸着物と蒸着源との間に位置させて規制手段（遮蔽手段）を設け、昇華または気化させた蒸着物質の被蒸着物への蒸着領域を規制するようにしている。規制手段としては、蒸着源の周囲に位置させて真空チャンバの底部に立設した支柱で片持ち支持される板状部材（規制板）が用いられる。   This type of vacuum vapor deposition apparatus is known, for example, from Patent Document 1. This has a vacuum chamber, and a crucible serving as a vapor deposition source for accommodating a vapor deposition material appropriately selected according to a thin film to be deposited is disposed at the bottom of the vacuum chamber. Then, while moving the deposition object in one direction at a predetermined speed in a vacuum chamber in a vacuum atmosphere, the vapor deposition material is heated to sublimate or vaporize, and the sublimation or vaporization is scattered from the vapor deposition source. A vapor deposition material to be deposited is attached to and deposited on an object to be vapor deposited to deposit a thin film having a predetermined thickness. At this time, a regulating means (shielding means) is provided in the vacuum chamber between the deposition object and the deposition source so as to regulate the deposition area of the deposited substance on the deposition object by sublimation or vaporization. Yes. As the regulating means, a plate-like member (regulating plate) that is positioned around the vapor deposition source and is cantilevered by a support column standing on the bottom of the vacuum chamber is used.

ここで、蒸着時に蒸着源から飛散した蒸着物質は、被蒸着物だけでなく、規制板のうち蒸着源側を向く一方の面やその側面にも付着、堆積するが、通常は、蒸着源に近い規制板の自由端側でその堆積量が最も多くなり易い。すると、規制板の一方の面から自由端に位置する規制板の側面にかけて蒸着物質が堆積し、この堆積物が昇華または気化した蒸着物質の被蒸着物に向かう飛散経路を遮るように膨出する。このため、この膨出した堆積物によって被処理物における蒸着領域が狭く制限されてしまうという不具合が生じる。このような場合、板状部材を頻繁に交換する必要が生じ、これでは、量産性が損なわれる。   Here, the vapor deposition material scattered from the vapor deposition source during vapor deposition adheres and deposits not only on the vapor deposition target, but also on one side of the regulation plate facing the vapor deposition source side or its side surface. The amount of accumulation tends to be the largest on the free end side of the nearest regulation plate. Then, the vapor deposition material accumulates from one surface of the regulation plate to the side surface of the regulation plate located at the free end, and this deposit bulges out so as to block the scattering path toward the deposition target of the vapor deposition material that has been sublimated or vaporized. . For this reason, the problem that the vapor deposition area | region in a to-be-processed object will be restrict | limited narrow by this swelled deposit arises. In such a case, it is necessary to frequently replace the plate-like member, which impairs mass productivity.

特開平７−９８８６２号公報JP-A-7-98862

本発明は、以上の点に鑑み、蒸着物質が付着、堆積しても、昇華または気化した蒸着物質の被蒸着物に向かう飛散経路を遮ることが可及的に抑制されるようにした規制板を有する真空蒸着装置を提供することをその課題とするものである。   In view of the above points, the present invention provides a regulating plate that suppresses as much as possible the blocking of the scattering path of the vapor deposition material that has been sublimated or vaporized toward the deposition target, even if the vapor deposition material has adhered or deposited. It is an object of the present invention to provide a vacuum vapor deposition apparatus having

上記課題を解決するために、真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する本発明の真空蒸着装置は、真空チャンバ内に設けた支持体で片持ち支持されて、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備え、規制板のうち蒸着源側を向く一方の面を下面、その他方を上面として、規制板の自由端に、下面と鈍角で且つ上面端部と鋭角で交差する傾斜面が形成されていることを特徴とする。   In order to solve the above-mentioned problem, the present invention is provided with a vapor deposition source in a vacuum chamber, and a vapor deposition material is sublimated or vaporized by the vapor deposition source in a vacuum atmosphere, and the sublimated or vaporized vapor deposition material is vapor deposited on an object to be deposited. The vacuum vapor deposition apparatus further includes a regulation plate that is cantilevered by a support provided in the vacuum chamber and regulates a scattering range of the vapor deposition material that scatters from the vapor deposition source toward the deposition target. One surface facing the vapor deposition source side is a lower surface and the other surface is an upper surface, and an inclined surface is formed at the free end of the regulating plate at an obtuse angle with the lower surface and at an acute angle with the upper surface end.

本発明によれば、真空チャンバ内で被蒸着物と蒸着源との間に位置させると共に、自由端側で昇華または気化させた蒸着物質の被蒸着物への蒸着領域を規制するように規制板を配置した状態で被蒸着物に対して蒸着すると、蒸着源から飛散した蒸着物質は、規制板のうち蒸着源側を向く規制板の一方の面及び傾斜面にも付着、堆積するが、規制板の側面が省略されるように傾斜面が形成されているため、この堆積物が昇華または気化した蒸着物質の被蒸着物に向かう飛散経路を遮るように膨出することが可及的に抑制される。その結果、堆積物によって被処理物における蒸着領域が狭く制限されるといった不具合が抑制され、規制板の交換頻度を上記従来例ものより大幅に少なくすることができる。   According to the present invention, the regulating plate is positioned between the deposition object and the deposition source in the vacuum chamber and regulates the deposition area of the deposition material sublimated or vaporized on the free end side to the deposition object. When vapor deposition is performed on an object to be vapor-deposited in a state of being disposed, the vapor deposition material scattered from the vapor deposition source adheres to and accumulates on one surface and the inclined surface of the restriction plate facing the vapor deposition source side of the restriction plate. Since the inclined surface is formed so that the side surface of the plate is omitted, it is possible to suppress as much as possible that the deposit bulges out so as to block the scattering path toward the deposition target of the vapor deposition material that has been sublimated or vaporized. Is done. As a result, the problem that the vapor deposition area in the object to be processed is narrowly restricted by the deposit is suppressed, and the replacement frequency of the regulation plate can be significantly reduced as compared with the conventional example.

ここで、蒸着源から飛散した蒸着物質が規制板に所定以上の厚さで堆積したとき、この堆積物が例えばパーティクルの発生源となる等の不具合が生じるため、所定の成膜時間を超えると、規制板を交換する必要がある。このとき、その都度、真空チャンバを大気開放して交換するのでは、量産性が損なわれる。本発明において、前記支持体が、前記蒸着源が設置される真空チャンバの壁面に立設された支柱で構成される場合、前記支柱に規制板の複数枚が取り付けられ、各規制板を蒸着物質の飛散範囲を制限しない退避位置に夫々移動させる移動手段を更に設ける構成を採用してもよい。また、前記支持体が回転軸を有し、この回転軸を回転駆動する駆動モータを設けられている場合、前記規制板の複数枚が回転軸回りに間隔を存して取り付けられている構成を採用してもよい。更に、前記支持体が複数本のローラとローラの周囲に無端状に巻き掛けられた搬送ベルトとを有する場合、前記規制板の複数枚が搬送ベルトに間隔を存して取り付けられている構成を採用してもよい。これにより、真空チャンバを大気開放して規制板を交換する頻度を少なくでき、高い量産性を達成することができる。   Here, when the vapor deposition material scattered from the vapor deposition source is deposited on the regulation plate with a thickness greater than or equal to a predetermined thickness, a problem such as the deposit becoming a particle generation source occurs. It is necessary to replace the regulation plate. At this time, if the vacuum chamber is opened and replaced each time, mass productivity is impaired. In the present invention, in the case where the support is composed of a support column erected on the wall surface of the vacuum chamber where the deposition source is installed, a plurality of regulation plates are attached to the support column, and each regulation plate is attached to a vapor deposition substance. A configuration may be adopted in which moving means for moving to the retreat positions that do not limit the scattering range is further provided. Further, in the case where the support has a rotating shaft and a drive motor for rotating the rotating shaft is provided, a plurality of the restriction plates are attached around the rotating shaft with a space therebetween. It may be adopted. Further, when the support has a plurality of rollers and a conveyor belt wound endlessly around the rollers, a plurality of the regulation plates are attached to the conveyor belt at intervals. It may be adopted. As a result, the frequency of opening the vacuum chamber to the atmosphere and exchanging the regulating plate can be reduced, and high mass productivity can be achieved.

本発明の実施形態の規制板を備える真空蒸着装置を模式的に示す断面図。Sectional drawing which shows typically a vacuum evaporation system provided with the control board of embodiment of this invention. （ａ）は従来例の規制板への蒸着物質の堆積を説明する拡大図、（ｂ）は本実施形態の規制板への蒸着物質の堆積を説明する拡大図。(A) is an enlarged view explaining deposition of the vapor deposition substance on the regulation plate of a conventional example, (b) is an enlarged view explaining deposition of the vapor deposition substance on the regulation plate of this embodiment. 図１に示す真空蒸着装置の一部を拡大して示す部分断面図。The fragmentary sectional view which expands and shows a part of vacuum deposition apparatus shown in FIG. 複数枚の規制板を設ける場合の変形例を説明する図。The figure explaining the modification in the case of providing a plurality of regulation boards. 複数枚の規制板を設ける場合の他の変形例を説明する図。The figure explaining other modifications in the case of providing a plurality of regulation boards. 複数枚の規制板を設ける場合の更に他の変形例を説明する図。The figure explaining further another modification in the case of providing a plurality of regulation boards.

以下、図面を参照して、被成膜物を矩形の輪郭を持つ所定厚さのガラス基板（以下、「基板Ｓｗ」という）、蒸着物質５を、液相を経て気相に転移する金属等の材料とし、基板Ｓｗの一方の面に所定の薄膜を蒸着する場合を例に本発明の真空蒸着装置の実施形態を説明する。以下において、「上」、「下」といった方向を示す用語は、真空蒸着装置の設置姿勢を示す図１を基準にする。   Hereinafter, with reference to the drawings, a film-deposited object is a glass substrate having a rectangular outline (hereinafter referred to as “substrate Sw”), a deposition material 5 that is transferred to a gas phase through a liquid phase, and the like. An embodiment of the vacuum deposition apparatus of the present invention will be described by taking as an example a case where a predetermined thin film is deposited on one surface of the substrate Sw. In the following, terms indicating directions such as “up” and “down” are based on FIG. 1 showing the installation posture of the vacuum deposition apparatus.

図１を参照して、ＤＭは、本実施形態の真空蒸着装置である。真空蒸着装置ＤＭは、真空チャンバ１を備え、真空チャンバ１には、特に図示して説明しないが、排気管を介して真空ポンプが接続され、所定圧力（真空度）に真空引きして保持できるようになっている。また、真空チャンバ１の上部には基板搬送装置２が設けられている。基板搬送装置２は、成膜面としての下面を開放した状態で基板Ｓｗを保持するキャリア２１を有し、図外の駆動装置によってキャリア２１、ひいては基板Ｓｗを真空チャンバ１内の一方向に所定速度で移動するようになっている。基板搬送装置２としては公知のものが利用できるため、これ以上の説明は省略する。また、以下において、蒸着源４に対する基板Ｓｗの相対移動方向をＸ軸方向、Ｘ軸方向に直交する基板Ｓｗの幅方向をＹ軸方向、Ｘ軸方向及びＹ軸方向に直交する図１中の上下方向をＺ軸方向とする。   With reference to FIG. 1, DM is the vacuum evaporation apparatus of this embodiment. The vacuum vapor deposition apparatus DM includes a vacuum chamber 1, which is not particularly illustrated and described, but is connected to a vacuum pump through an exhaust pipe, and can be evacuated to a predetermined pressure (degree of vacuum) and held. It is like that. A substrate transfer device 2 is provided above the vacuum chamber 1. The substrate transfer device 2 has a carrier 21 that holds the substrate Sw in a state where a lower surface as a film formation surface is opened, and the carrier 21 and thus the substrate Sw are predetermined in one direction in the vacuum chamber 1 by a driving device (not shown). It moves at speed. Since a well-known device can be used as the substrate transfer device 2, further description is omitted. Further, in the following, the relative movement direction of the substrate Sw with respect to the vapor deposition source 4 is the X axis direction, and the width direction of the substrate Sw orthogonal to the X axis direction is orthogonal to the Y axis direction, the X axis direction, and the Y axis direction in FIG. The vertical direction is the Z-axis direction.

基板搬送装置２によって搬送される基板Ｓｗと後述の蒸着源４との間には、板状のマスクプレート３が設けられている。本実施形態では、マスクプレート３は、基板Ｓｗと一体に取り付けられて基板Ｓｗと共に基板搬送装置２によって搬送されるようになっている。なお、マスクプレート３は、真空チャンバ１に予め固定配置しておくこともできる。マスクプレート３には、板厚方向に貫通する複数の開口３１が形成され、これら開口３１がない位置にて蒸着物質の基板Ｓｗに対する付着範囲が制限されることで所定のパターンで基板Ｓｗに成膜されるようになっている。マスクプレート３としては、インバー、アルミ、アルミナやステンレス等の金属製の他、ポリイミド等の樹脂製のものが用いられる。そして、真空チャンバ１の底面には、Ｘ軸方向に移動される基板Ｓｗに対向させて本実施形態の蒸着源４が設けられている。   A plate-like mask plate 3 is provided between the substrate Sw transported by the substrate transport device 2 and a vapor deposition source 4 described later. In the present embodiment, the mask plate 3 is mounted integrally with the substrate Sw and is transported by the substrate transport device 2 together with the substrate Sw. Note that the mask plate 3 can be fixedly disposed in advance in the vacuum chamber 1. The mask plate 3 is formed with a plurality of openings 31 penetrating in the thickness direction, and the deposition range of the vapor deposition material on the substrate Sw is limited at positions where these openings 31 are not present, so that the substrate Sw is formed in a predetermined pattern. It has come to be a film. The mask plate 3 is made of a metal such as invar, aluminum, alumina, stainless steel, or a resin such as polyimide. And the vapor deposition source 4 of this embodiment is provided in the bottom face of the vacuum chamber 1 facing the board | substrate Sw moved to the X-axis direction.

蒸着源４は蒸着物質５を収容する収容箱４１を有する。蒸着物質５としては、基板Ｓｗに成膜しようとする薄膜に応じて金属や樹脂等の材料から適宜選択され、顆粒状またはタブレット状のものが利用される。収容箱４１の下部には、金属製の受け皿４２が設けられ、受け皿４２上に蒸着物質５が設置されるようになっている。受け皿４２と収容箱４１の底壁との間には加熱手段（図示せず）が設けられ、受け皿４２を介して蒸着物質５が気化温度まで加熱されるようになっている。加熱手段としては、シースヒータやランプヒータ等の公知のものが利用でき、このような加熱手段は収容箱４１の外側に配置することもできる。なお、特に図示して説明しないが、収容箱４１内には、受け皿４２の上方に位置させて分散板が設けられ、気化した蒸着物質５を後述の各噴射ノズルから略均等な流量で噴射できるようになっている。   The vapor deposition source 4 includes a storage box 41 that stores the vapor deposition material 5. The vapor deposition substance 5 is appropriately selected from materials such as metal and resin according to the thin film to be formed on the substrate Sw, and is in the form of granules or tablets. A metal tray 42 is provided at the bottom of the storage box 41, and the vapor deposition material 5 is placed on the tray 42. A heating means (not shown) is provided between the tray 42 and the bottom wall of the storage box 41 so that the vapor deposition material 5 is heated to the vaporization temperature via the tray 42. As the heating means, known ones such as a sheath heater and a lamp heater can be used, and such a heating means can be disposed outside the storage box 41. Although not specifically illustrated and described, a dispersion plate is provided in the storage box 41 so as to be positioned above the receiving tray 42, and the vaporized vapor deposition material 5 can be injected from each injection nozzle described later at a substantially equal flow rate. It is like that.

収容箱４１の上面（基板Ｓｗとの対向面）４１ａには、所定高さの筒体で構成される、気化した蒸着物質５を噴射する噴射ノズル４３ａ，４３ｂがＹ軸方向に所定の間隔で（本実施形態では、６本）列設されている。この場合、Ｙ軸方向両端に位置する２本の噴射ノズル４３ａは、その孔軸がＺ軸方向に対して所定角度でＹ軸方向外方に傾斜するように立設され、それ以外の各噴射ノズル４３ｂは、Ｚ軸方向に沿って立設されている。なお、噴射ノズル４３ａ，４３ｂの本数及び相互間の間隔、傾斜させる噴射ノズル４３ａ，４３ｂの本数及びその傾斜角、各噴射ノズル４３ａ，４３ｂのノズル径や、上面４１ａからノズル先端までの高さは、例えば基板Ｓｗに蒸着したときのＹ軸方向の膜厚分布や、蒸着中の（上面４１ａに堆積したものによる）ノズル詰まりの回避を考慮して適宜設定される。   On the upper surface (opposite surface facing the substrate Sw) 41a of the storage box 41, injection nozzles 43a and 43b for injecting the vaporized vapor deposition material 5 made of a cylinder having a predetermined height are provided at predetermined intervals in the Y-axis direction. (Six in this embodiment) are arranged. In this case, the two injection nozzles 43a located at both ends in the Y-axis direction are erected so that their hole axes are inclined outward in the Y-axis direction at a predetermined angle with respect to the Z-axis direction. The nozzle 43b is erected along the Z-axis direction. The number of spray nozzles 43a and 43b and the distance between them, the number of spray nozzles 43a and 43b to be tilted and their tilt angles, the nozzle diameter of each spray nozzle 43a and 43b, and the height from the upper surface 41a to the nozzle tip are as follows. For example, the thickness is appropriately set in consideration of the film thickness distribution in the Y-axis direction when vapor-deposited on the substrate Sw and the prevention of nozzle clogging (due to the deposit on the upper surface 41a) during vapor deposition.

また、真空チャンバ１の底面には、蒸着源４のＹ軸方向両側に位置させて支持体としての支柱６が夫々立設され、その先端部には、上下方向で基板Ｓｗと蒸着源４との間に位置させて規制板７が片持ち支持されている。そして、真空雰囲気中の真空チャンバ１内で収容箱４１の受け皿４２上に設置した固体の蒸着物質５を加熱すると、蒸着物質５が液相を経て気相に転移し、この気化した蒸着物質５が各噴射ノズル４３ａ，４３ｂ内を通って基板Ｓｗに向けて飛散し、蒸着物質５が付着、堆積して蒸着される。このとき、規制板７により気化させた蒸着物質５の基板Ｓｗへの蒸着領域が規制され（つまり、Ｙ軸方向両端に位置する噴射ノズル４３ａと基板ＳｗのＹ軸方向両端とを結ぶ規制線ＲｌよりＹ軸方向への蒸着物質５の飛散が制限され）、例えば、基板ＳｗにおけるＹ軸方向に沿う膜厚分布を均等にできるようになっている。   Further, on the bottom surface of the vacuum chamber 1, support columns 6 as support members are erected on both sides in the Y-axis direction of the vapor deposition source 4, and the substrate Sw, the vapor deposition source 4, and the vertical direction are formed at the tip portions thereof. The restricting plate 7 is cantilevered between the two. When the solid vapor deposition material 5 placed on the receiving tray 42 of the storage box 41 is heated in the vacuum chamber 1 in a vacuum atmosphere, the vapor deposition material 5 is transferred to the gas phase through the liquid phase. Is scattered toward the substrate Sw through each of the injection nozzles 43a and 43b, and the vapor deposition material 5 is attached and deposited to be evaporated. At this time, the vapor deposition region on the substrate Sw of the vapor deposition material 5 vaporized by the regulation plate 7 is regulated (that is, the regulation line Rl connecting the spray nozzle 43a located at both ends in the Y axis direction and both ends in the Y axis direction of the substrate Sw. For example, the film thickness distribution along the Y-axis direction in the substrate Sw can be made uniform.

ところで、蒸着時に蒸着源４から飛散した蒸着物質５は、基板Ｓｗの下面だけでなく、規制板７のうち蒸着源４側を向く下面やその側面にも付着、堆積するが、通常は、蒸着源４に近い規制板７の自由端側でその堆積量が最も多くなる。この場合、従来例の規制板７０では、図２（ａ）に示すように、その下面７０ａからＹ軸方向に位置する自由端側の側面７０ｂにかけて蒸着物質５が堆積し、この堆積物５１が、蒸着源４から飛散した蒸着物質５の基板Ｓｗに向かう飛散経路を遮るように（即ち、規制線Ｒｌを跨いでＹ軸方向内方まで）膨出する。このため、この膨出した堆積物５１によって基板Ｓｗにおける蒸着領域が狭く制限されてしまうという不具合が生じる。   By the way, the vapor deposition material 5 scattered from the vapor deposition source 4 at the time of vapor deposition adheres to and accumulates not only on the lower surface of the substrate Sw but also on the lower surface of the regulation plate 7 facing the vapor deposition source 4 and the side surfaces thereof. On the free end side of the regulating plate 7 close to the source 4, the amount of accumulation is the largest. In this case, in the regulation plate 70 of the conventional example, as shown in FIG. 2A, the vapor deposition material 5 is deposited from the lower surface 70a to the side surface 70b on the free end side located in the Y-axis direction. Then, the vapor deposition material 5 swelled from the vapor deposition source 4 bulges out so as to block the scattering path toward the substrate Sw (that is, to the inside of the Y axis direction across the regulation line Rl). For this reason, the problem that the vapor deposition area | region in the board | substrate Sw will be narrowly restrict | limited by this bulging deposit 51 arises.

そこで、本実施形態では、図２（ｂ）に示すように、規制板７の自由端に、規制板７のうち蒸着源４側を向くその下面７１と鈍角で且つ上面７２の端部と鋭角で交差する傾斜面７３を形成することとした（つまり、Ｙ軸方向に位置する規制板７の自由端側の側面が省略されるようにした）。この場合、規制板７の下面７１と傾斜面７３とが交差するときの角度α１が、５度〜４５度の範囲内であることが好ましい。これにより、蒸着源４から飛散した蒸着物質５は、規制板７の下面７１や傾斜面７３にも付着、堆積するが、この堆積物５１が、蒸着源４から飛散した蒸着物質５の基板Ｓｗに向かう飛散経路を遮るように（即ち、規制線Ｒｌを跨いでＹ軸方向内方まで）膨出することが可及的に抑制される。その結果、堆積物５１によって基板Ｓｗにおける蒸着領域が狭く制限されるといった不具合が抑制され、規制板７の交換頻度を上記従来例ものより大幅に少なくすることができる。   Therefore, in the present embodiment, as shown in FIG. 2B, the free end of the restriction plate 7 is obtuse with the lower surface 71 of the restriction plate 7 facing the vapor deposition source 4 side, and is acute with the end of the upper surface 72. The inclined surfaces 73 intersecting with each other are formed (that is, the side surface on the free end side of the regulating plate 7 positioned in the Y-axis direction is omitted). In this case, it is preferable that the angle α1 when the lower surface 71 of the regulating plate 7 and the inclined surface 73 intersect each other is in the range of 5 degrees to 45 degrees. As a result, the vapor deposition material 5 scattered from the vapor deposition source 4 adheres to and accumulates on the lower surface 71 and the inclined surface 73 of the regulating plate 7, but this deposit 51 is the substrate Sw of the vapor deposition material 5 scattered from the vapor deposition source 4. It is possible to suppress as much as possible the bulging so as to block the scattering path toward (that is, to the inside in the Y-axis direction across the regulation line Rl). As a result, the problem that the deposition region on the substrate Sw is narrowly limited by the deposit 51 is suppressed, and the replacement frequency of the regulation plate 7 can be significantly reduced as compared with the conventional example.

ところで、蒸着源４の噴射ノズル４３ａ，４３ｂから飛散した蒸着物質５が規制板７の下面７１や傾斜面７３に所定以上の厚さで堆積したとき、この堆積物５１が例えばパーティクルの発生源となる等の不具合が生じる。このため、所定の成膜時間を超えると、規制板７を交換する必要があるが、その都度、真空チャンバ１を大気開放して交換するのでは、量産性が損なわれる。本実施形態では、図３に示すように、支柱６の上端部に、同一形態を持つ複数枚の規制板７が片持ち支持されるようにしている。支柱６には、この支柱６から真空チャンバ１のＹ軸方向内方に向けて出没自在な支持竿８１を有する２個のアクチュエータ８ａ，８ｂが上下方向に間隔を存して設けられている。この場合、各アクチュエータ８ａ，８ｂは、規制板７の面積（つまり、Ｘ軸方向の長さ）に応じて、Ｘ軸方向に間隔を置いて複数設けることができ、また、支持竿８１の先端にＸ軸方向に長手のものを更に設けることもできる。各アクチュエータ８ａ，８ｂとしては、空気式や電動式など公知のものが利用できるため、ここでは詳細な説明は省略する。   By the way, when the vapor deposition material 5 scattered from the spray nozzles 43a and 43b of the vapor deposition source 4 is deposited on the lower surface 71 and the inclined surface 73 of the regulation plate 7 with a thickness greater than a predetermined thickness, the deposit 51 is, for example, a particle generation source. This causes problems. For this reason, when the predetermined film formation time is exceeded, it is necessary to replace the regulation plate 7. However, if the vacuum chamber 1 is opened and replaced each time, mass productivity is impaired. In the present embodiment, as shown in FIG. 3, a plurality of restriction plates 7 having the same configuration are cantilevered at the upper end of the column 6. The support 6 is provided with two actuators 8a and 8b having support rods 81 that can be projected and retracted from the support 6 toward the inside of the vacuum chamber 1 in the Y-axis direction with a space in the vertical direction. In this case, a plurality of actuators 8a and 8b can be provided at intervals in the X-axis direction according to the area of the restricting plate 7 (that is, the length in the X-axis direction). In addition, it is possible to further provide a member having a length in the X-axis direction. As each actuator 8a, 8b, since a well-known thing, such as an air type and an electric type, can be used, detailed explanation is omitted here.

下方に位置する第１アクチュエータ８ａは、最下段に位置する規制板７のみを支持し、この状態では、規制板７の自由端が、規制線Ｒｌ上に位置するようになっている。また、第１アクチュエータ８ａより上方に位置する支柱６の部分は、Ｙ軸方向外方に向けて傾斜され、この傾斜させた支柱６の部分に第２アクチュエータ８ｂが設けられている。第２アクチュエータ８ｂの支持竿８１は、複数枚の規制板７が重ねられた状態で支持し、この状態では、各規制板７の自由端が規制線Ｒｌ上から所定間隔を存するようにＹ軸方向外方にオフセットされ、蒸着源４から飛散した蒸着物質５の基板Ｓｗに向かう飛散経路を遮らないようになっている（図１参照）。そして、第１アクチュエータ８ａで支持された最下段に位置する規制板７に所定以上の堆積物５１が形成されると、第１アクチュエータ８ａの支持竿８１が没入位置に移動され、その規制板７が支柱６に案内されて真空チャンバ１の底面（退避位置）まで移動される。   The lower first actuator 8a supports only the restriction plate 7 located at the lowermost stage. In this state, the free end of the restriction plate 7 is located on the restriction line Rl. Further, the portion of the column 6 positioned above the first actuator 8a is inclined outward in the Y-axis direction, and the second actuator 8b is provided in the inclined column 6 portion. The support rod 81 of the second actuator 8b supports in a state where a plurality of restriction plates 7 are stacked, and in this state, the Y-axis is set such that the free ends of the restriction plates 7 are spaced from the restriction line Rl. It is offset outward in the direction so as not to block the scattering path toward the substrate Sw of the vapor deposition material 5 scattered from the vapor deposition source 4 (see FIG. 1). And when the deposit 51 more than predetermined is formed in the control board 7 located in the lowest step supported by the 1st actuator 8a, the support rod 81 of the 1st actuator 8a will be moved to an immersion position, and the control board 7 Is guided to the column 6 and moved to the bottom surface (retracted position) of the vacuum chamber 1.

次に、第１アクチュエータ８ａの支持竿８１を突出位置（図３に示す状態）に移動させた後、第２アクチュエータ８ｂの支持竿８１を没入位置に移動させると、第２アクチュエータ８ｂで支持された規制板７のうち最下段のものが下降して第１アクチュエータ８ａで支持される（成膜位置）。本実施形態では、支柱６に設けられる各アクチュエータ８ａ，８ｂが各規制板７を蒸着物質の飛散範囲を制限しない退避位置に夫々移動させる移動手段を構成する。以降、この操作が繰り返されて、最上段に位置する規制板７に所定以上の堆積物５１が形成されるまで長時間にわたって規制板７により気化させた蒸着物質５の基板Ｓｗへの蒸着領域が規制される。これにより、堆積物５１に起因した規制板７自体の交換頻度を少なくできることと相俟って、真空チャンバ１を大気開放して各規制板７を交換する頻度を少なくでき（メンテナンスサイクルを長くでき）、高い量産性を達成することができる。   Next, after the support rod 81 of the first actuator 8a is moved to the protruding position (the state shown in FIG. 3), if the support rod 81 of the second actuator 8b is moved to the immersive position, the first actuator 8a is supported by the second actuator 8b. The lowermost one of the regulating plates 7 is lowered and supported by the first actuator 8a (deposition position). In this embodiment, each actuator 8a, 8b provided in the support | pillar 6 comprises the moving means which moves each control board 7 to the retracted position which does not restrict | limit the scattering range of a vapor deposition substance, respectively. Thereafter, this operation is repeated until an evaporation region 5 on the substrate Sw of the vapor deposition material 5 vaporized by the restriction plate 7 for a long time until the deposit 51 of a predetermined amount or more is formed on the restriction plate 7 positioned at the uppermost stage. Be regulated. Thereby, coupled with the fact that the replacement frequency of the restriction plate 7 itself due to the deposit 51 can be reduced, the frequency of replacing the restriction plate 7 by opening the vacuum chamber 1 to the atmosphere can be reduced (the maintenance cycle can be lengthened). ), High mass productivity can be achieved.

以上、本発明の実施形態について説明したが、本発明の技術思想の範囲を逸脱しない限り、種々の変形が可能である。上記実施形態では、蒸着源４として、収容箱４１の上面４１ａに噴射ノズル４３を列設したもの（所謂ラインソース）を用いるものを例に説明したが、これに限定されるものではなく、蒸着源４がルツボで構成されるような場合も本発明は適用可能である。また、上記実施形態では、蒸着源４のＹ軸方向両側に規制板７を配置して蒸着物質５の基板Ｓｗへの蒸着領域を規制するものを例に説明したが、これに限定されるものではない。特に図示して説明しないが、例えば上記蒸着源４にて収容箱４１の上面４１ａに支柱を立設し、上記と同様にしてこの支柱に複数枚の規制板を設け、いずれかの噴射ノズル４３ａ，４３ｂからの蒸着物質５の飛散範囲を規制するものにも本発明は適用できる。   The embodiment of the present invention has been described above, but various modifications can be made without departing from the scope of the technical idea of the present invention. In the above-described embodiment, the vapor deposition source 4 is described using an example in which the injection nozzle 43 is arranged on the upper surface 41a of the storage box 41 (so-called line source), but is not limited thereto. The present invention can also be applied when the source 4 is constituted by a crucible. Moreover, although the said embodiment demonstrated the example which arrange | positions the control board 7 on the both sides of the Y-axis direction of the vapor deposition source 4, and regulates the vapor deposition area | region to the board | substrate Sw of the vapor deposition substance 5, it is limited to this. is not. Although not specifically illustrated and described, for example, a column is erected on the upper surface 41a of the storage box 41 in the vapor deposition source 4, and a plurality of regulating plates are provided on the column in the same manner as described above, and any one of the injection nozzles 43a , 43b, the present invention can also be applied to those that regulate the scattering range of the vapor deposition material 5.

また、上記実施形態では、規制板７を片持ち支持する支持体として支柱６を用いるものを例に説明したが、これに限定されるものではなく、例えば、真空チャンバ１の内側壁で規制板７を支持することができ、そのような場合には真空チャンバ１の内側壁に移動手段が設けられる。また、移動手段として２個のアクチュエータ８ａ，８ｂを用いるものを例に説明したが、所定以上の堆積物５１が形成された規制板７を支柱６に沿って退避位置に移動できるものであれば、その形態は問わない。   In the above embodiment, the support 6 that supports the restriction plate 7 in a cantilever manner is described as an example. However, the present invention is not limited to this. For example, the restriction plate is formed on the inner wall of the vacuum chamber 1. In such a case, a moving means is provided on the inner wall of the vacuum chamber 1. Further, although the example using the two actuators 8a and 8b as the moving means has been described as an example, as long as the regulation plate 7 on which the deposit 51 or more is formed can be moved along the support column 6 to the retracted position. The form does not matter.

図４に示す変形例では、Ｘ軸方向に間隔を存して２本の板状の支柱６０が真空チャンバ１に立設され、両支柱６０には、複数本の回転軸６１がＺ軸方向に間隔を存して軸支され、各回転軸６１に規制板７が揺動自在に取り付けられている。そして、規制板７に所定以上の堆積物５１が形成されると、移動手段としての駆動モータＤｍで回転軸６１を回転駆動させて、各規制板７を真空チャンバ１の内側壁に重なる位置（退避位置）に夫々移動できるようにしている。この場合、堆積物５１が形成された各規制板７を真空チャンバ１の内側壁に沿って重ねることができるように、各回転軸６１は、Ｚ軸方向上方に向かうに従い、Ｙ軸方向内方に向けて偏心されている。また、未使用の規制板７が蒸着源４から飛散した蒸着物質５の基板Ｓｗに向かう飛散経路を遮らないように規制板７のＹ軸方向の長さは、Ｚ軸方向上方に向かうに従い、短くなるように設定されている。   In the modification shown in FIG. 4, two plate-like support columns 60 are erected in the vacuum chamber 1 with an interval in the X-axis direction, and a plurality of rotating shafts 61 are arranged in the Z-axis direction on both support columns 60. The regulating plate 7 is swingably attached to each rotating shaft 61. And when the deposit 51 more than predetermined is formed in the control board 7, the rotating shaft 61 is rotationally driven by the drive motor Dm as a moving means, and each control board 7 overlaps the inner wall of the vacuum chamber 1 ( Each of them can be moved to a retreat position. In this case, the rotary shafts 61 move inward in the Y-axis direction as they move upward in the Z-axis direction so that the regulating plates 7 on which the deposits 51 are formed can be stacked along the inner wall of the vacuum chamber 1. It is eccentric towards Further, the length of the restriction plate 7 in the Y-axis direction is increased upward in the Z-axis direction so that the unused restriction plate 7 does not block the scattering path toward the substrate Sw of the vapor deposition material 5 scattered from the vapor deposition source 4. It is set to be shorter.

また、図５に示す他の変形例では、真空チャンバ１内にＸ軸方向にのびる単一の回転軸９０が設けられ、回転軸９０の周囲に、周方向に間隔を置いて複数枚の規制板７が設けられている。そして、一の規制板７に所定以上の堆積物５１が形成されると、移動手段としての駆動モータＤｍで回転軸９０を所定角だけ回転駆動させて、次の規制板７により、蒸着物質５の基板Ｓｗへの蒸着領域が規制されるようにしている。   In another modification shown in FIG. 5, a single rotating shaft 90 extending in the X-axis direction is provided in the vacuum chamber 1, and a plurality of restrictions are provided around the rotating shaft 90 at intervals in the circumferential direction. A plate 7 is provided. And when the deposit 51 more than the predetermined is formed on one regulation plate 7, the rotary shaft 90 is rotated by a predetermined angle by the drive motor Dm as the moving means, and the vapor deposition material 5 is produced by the next regulation plate 7. The deposition region on the substrate Sw is regulated.

更に、図６に示す更に他の変形例では、真空チャンバ１内にＹ軸方向に間隔を置いてＸ軸方向にのびる少なくとも２個のローラ９１と、各ローラ９１の周囲に無端状に巻き掛けられた搬送ベルト９２とを備え、搬送ベルト９２に間隔をおいて複数枚の規制板７を設けている。そして、一の規制板７に所定以上の堆積物５１が形成されると、図示省略のモータでローラ９１を間欠的に回転駆動させて、次の規制板７により、蒸着物質５の基板Ｓｗへの蒸着領域が規制されるようにしている。   Further, in still another modification shown in FIG. 6, at least two rollers 91 extending in the X-axis direction at intervals in the Y-axis direction in the vacuum chamber 1 and endlessly wound around each roller 91. And a plurality of regulating plates 7 are provided at intervals on the conveyor belt 92. Then, when a predetermined amount or more of deposit 51 is formed on one regulation plate 7, the roller 91 is intermittently rotated by a motor (not shown), and the next regulation plate 7 moves to the substrate Sw of the vapor deposition material 5. The deposition area is regulated.

ＤＭ…真空蒸着装置、１…真空チャンバ、４…蒸着源、５…蒸着物質、５１…蒸着物質の堆積物、６…支柱（支持体）、７…規制板、７１…規制板の下面、７２…規制板の上面、７３…傾斜面、８ａ、８ｂ…アクチュエータ（移動手段）、９１…ローラ、９２…搬送ベルト、Ｄｍ…駆動モータ、Ｓｗ…基板（被成膜物）。   DM ... Vacuum evaporation apparatus, 1 ... Vacuum chamber, 4 ... Vapor deposition source, 5 ... Vapor deposition material, 51 ... Deposition of vapor deposition material, 6 ... Stand (support), 7 ... Regulator plate, 71 ... Lower surface of the regulator plate, 72 ... upper surface of regulating plate, 73 ... inclined surface, 8a, 8b ... actuator (moving means), 91 ... roller, 92 ... transport belt, Dm ... drive motor, Sw ... substrate (film formation object).

Claims (4)

真空チャンバ内に蒸着源を備え、真空雰囲気中にてこの蒸着源で蒸着物質を昇華または気化させ、この昇華または気化した蒸着物質を被蒸着物に蒸着する真空蒸着装置であって、
真空チャンバ内に設けた支持体で片持ち支持されて、蒸着源から被蒸着物に向けて飛散する蒸着物質の飛散範囲を規制する規制板を更に備えるものにおいて、
規制板のうち蒸着源側を向く一方の面を下面、その他方を上面として、規制板の自由端に、下面と鈍角で且つ上面端部と鋭角で交差する傾斜面が形成されていることを特徴とする真空蒸着装置。 A vacuum vapor deposition apparatus comprising a vapor deposition source in a vacuum chamber, sublimating or vaporizing a vapor deposition material with the vapor deposition source in a vacuum atmosphere, and depositing the sublimated or vaporized vapor deposition material on a deposition target,
In what further includes a regulating plate that is cantilevered by a support provided in the vacuum chamber and regulates the scattering range of the vapor deposition material that scatters from the vapor deposition source toward the deposition target,
Of the restricting plate, one surface facing the vapor deposition source side is the lower surface and the other is the upper surface, and an inclined surface intersecting the lower surface with an obtuse angle and an upper surface end at an acute angle is formed at the free end of the restricting plate. A vacuum deposition device characterized. 請求項１記載の真空蒸着装置であって、前記支持体が、前記蒸着源が設置される真空チャンバの壁面に立設された支柱で構成されるものにおいて、
前記支柱に規制板の複数枚が取り付けられ、各規制板を蒸着物質の飛散範囲を制限しない退避位置に夫々移動させる移動手段を更に設けたことを特徴とする真空蒸着装置。 The vacuum deposition apparatus according to claim 1, wherein the support is configured by a support column erected on a wall surface of a vacuum chamber where the deposition source is installed.
A vacuum deposition apparatus, wherein a plurality of regulating plates are attached to the support column, and further provided with moving means for moving each regulating plate to a retreat position that does not limit the scattering range of the vapor deposition material. 請求項１記載の真空蒸着装置であって、前記支持体が回転軸を有し、この回転軸を回転駆動する駆動モータを設けたものにおいて、
前記規制板の複数枚が回転軸回りに間隔を存して取り付けられていることを特徴とする真空蒸着装置。 The vacuum evaporation apparatus according to claim 1, wherein the support has a rotating shaft, and a drive motor for rotating the rotating shaft is provided.
A vacuum deposition apparatus, wherein a plurality of the regulation plates are attached around the rotation axis with a space therebetween. 請求項１記載の真空蒸着装置であって、前記支持体が複数本のローラとローラの周囲に無端状に巻き掛けられた搬送ベルトとを有するものにおいて、
前記規制板の複数枚が搬送ベルトに間隔を存して取り付けられていることを特徴とする真空蒸着装置。 The vacuum deposition apparatus according to claim 1, wherein the support has a plurality of rollers and a transport belt wound endlessly around the rollers.
A vacuum deposition apparatus, wherein a plurality of the regulating plates are attached to the conveying belt with a space therebetween.
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JP2023091409A (en) * 2021-12-20 2023-06-30 キヤノントッキ株式会社 Sputtering device
WO2024070473A1 (en) * 2022-09-26 2024-04-04 キヤノントッキ株式会社 Film formation device and film formation method

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JPH0798863A (en) * 1993-09-30 1995-04-11 Kao Corp Apparatus for production of magnetic recording medium
JP2012140695A (en) * 2011-01-06 2012-07-26 Nitto Denko Corp Vapor deposition device

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JPH0798863A (en) * 1993-09-30 1995-04-11 Kao Corp Apparatus for production of magnetic recording medium
JP2012140695A (en) * 2011-01-06 2012-07-26 Nitto Denko Corp Vapor deposition device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023091409A (en) * 2021-12-20 2023-06-30 キヤノントッキ株式会社 Sputtering device
JP7473520B2 (en) 2021-12-20 2024-04-23 キヤノントッキ株式会社 Sputtering Equipment
WO2024070473A1 (en) * 2022-09-26 2024-04-04 キヤノントッキ株式会社 Film formation device and film formation method

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