JP2019184229A5 - - Google Patents
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- JP2019184229A5 JP2019184229A5 JP2019045511A JP2019045511A JP2019184229A5 JP 2019184229 A5 JP2019184229 A5 JP 2019184229A5 JP 2019045511 A JP2019045511 A JP 2019045511A JP 2019045511 A JP2019045511 A JP 2019045511A JP 2019184229 A5 JP2019184229 A5 JP 2019184229A5
- Authority
- JP
- Japan
- Prior art keywords
- plate
- heat equalizing
- heater
- equalizing plate
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 9
- 238000002791 soaking Methods 0.000 claims 6
- 238000004049 embossing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001902 propagating Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Description
また、複数のワーク支持部３３の、少なくともワーク１００に接触する端部を熱伝導率
の低い材料から形成することができる。熱伝導率の低い材料は、例えば、セラミックスと
することができる。この場合、セラミックスの中でも２０℃における熱伝導率が３２Ｗ/
（ｍ・ｋ）以下の材料とすることが好ましい。セラミックスは、例えばアルミナ（Ａｌ２
Ｏ３）、窒化珪素（Ｓｉ３Ｎ４）、ジルコニア（ＺｒＯ２）などとすることができる。
Further, at least the ends of the plurality of work support portions 33 that come into contact with the work 100 can be formed of a material having a low thermal conductivity. The material having low thermal conductivity can be ceramics, for example. In this case, among the ceramics, the thermal conductivity at 20°C is 32 W/
It is preferable to use a material of (m·k) or less. Ceramics are, for example, alumina (Al2
O3), silicon nitride (Si3N4), zirconia ( ZrO2 ), or the like.
なお、複数の上部均熱板３４ａおよび複数の下部均熱板３４ｂは、複数のヒータ３２ａが並ぶ方向に並べて設けられているものとして説明したが、上部均熱板３４ａおよび下部均熱板３４ｂの少なくとも一方は、単一の板状部材とすることもできる。この場合、上部均熱板３４ａおよび下部均熱板３４ｂの少なくとも一方は、フレーム３１の両端に最も近い一対の均熱板支持部３５によって支持されることになる。
なお、上部均熱板３４ａおよび下部均熱板３４ｂの少なくとも一方を、単一の板状部材とする場合であっても、上部均熱板３４ａ（または下部均熱板３４ｂ）の図１における端部の付近には、チャンバ１０の内壁と反射板３６との間の空間と、処理室３０ａ、３０ｂとがつながる隙間が設けられている。
上部均熱板３４ａおよび下部均熱板３４ｂを単一の板状部材とした場合であっても、複数のヒータ３２ａから放射された熱は、上部均熱板３４ａおよび下部均熱板３４ｂに入射し、これらの内部を面方向に伝搬しながらワーク１００に向けて放射される。そのため、ワーク１００に不均一な温度分布が生じるのを抑制することができ、ひいては形成された有機膜の品質を向上させることができる。すなわち、本実施の形態に係る有機膜形成装置１によれば有機材料と溶媒を含む溶液が塗布された基板を均一に加熱し、基板面内均一に有機膜を形成することができる。
The plurality of upper heat equalizing plates 34a and the plurality of lower heat equalizing plates 34b have been described as being provided side by side in the direction in which the plurality of heaters 32a are arranged. At least one may be a single plate-shaped member. In this case, at least one of the upper heat equalizing plate 34a and the lower heat equalizing plate 34b is supported by the pair of heat equalizing plate support portions 35 closest to both ends of the frame 31.
Even when at least one of the upper heat equalizing plate 34a and the lower heat equalizing plate 34b is a single plate member, the end of the upper heat equalizing plate 34a (or the lower heat equalizing plate 34b) in FIG. A space between the inner wall of the chamber 10 and the reflection plate 36 and the processing chambers 30a and 30b is provided near the portion.
Even when the upper heat equalizing plate 34a and the lower heat equalizing plate 34b are formed as a single plate-shaped member, the heat radiated from the plurality of heaters 32a is incident on the upper heat equalizing plate 34a and the lower heat equalizing plate 34b. Then, it is radiated toward the workpiece 100 while propagating in the inside in the plane direction. Therefore, it is possible to suppress the occurrence of non-uniform temperature distribution in the work 100, and it is possible to improve the quality of the formed organic film. That is, according to the organic film forming apparatus 1 according to the present embodiment, the substrate coated with the solution containing the organic material and the solvent can be uniformly heated to uniformly form the organic film in the substrate surface.
スペーサ３７の材料には特に限定はないが、耐熱性と耐食性を有する材料とすることが好ましい。例えば、スペーサ３７の材料は、ステンレスやセラミックスなどとすることができる。この場合、スペーサ３７は、熱伝導率の低い材料から形成することが好ましい。熱伝導率の低い材料は、例えば、セラミックスとすることができる。この場合、セラミックスの中でも２０℃における熱伝導率が３２Ｗ/（ｍ・ｋ）以下の材料とすることが好ましい。セラミックスは、例えばアルミナ（Ａｌ２Ｏ３）、窒化珪素（Ｓｉ３Ｎ４）、ジル
コニア（ＺｒＯ２）などとすることができる。
The material of the spacer 37 is not particularly limited, but a material having heat resistance and corrosion resistance is preferable. For example, the material of the spacer 37 can be stainless steel or ceramics. In this case, the spacer 37 is preferably formed of a material having low thermal conductivity. The material having a low thermal conductivity can be ceramics, for example. In this case, among the ceramics, a material having a thermal conductivity at 20° C. of 32 W/(m·k) or less is preferable. The ceramic can be, for example, alumina (Al2O3), silicon nitride (Si3N4), zirconia ( ZrO2 ), or the like.
Claims (8)
前記チャンバの内部を排気可能な排気部と、
前記チャンバの内部に設けられた、少なくとも１つの第１のヒータを有する第１の加熱部と、
前記チャンバの内部に設けられた、少なくとも１つの第２のヒータを有し、前記第１の加熱部と対向する第２の加熱部と、
前記第１の加熱部と、前記第２の加熱部との間に設けられた少なくとも１つの第１の均熱板と、
前記第１の均熱板と、前記第２の加熱部との間に設けられた少なくとも１つの第２の均熱板と、
前記第１の均熱板と、前記第２の均熱板と、の間であって、基板と、前記基板の上面に塗布された有機材料と溶媒とを含む溶液と、を有するワークが支持される処理領域と、
前記チャンバの内部に設けられ、前記第１の加熱部、前記第２の加熱部、前記第１の均熱板、前記第２の均熱板、および、前記処理領域が含まれる領域を囲む第１の反射板と、
を備え、
前記第１の均熱板および前記第２の均熱板は、前記第１のヒータおよび前記第２のヒータから入射した熱を前記処理領域側に放射し、前記第１の反射板は前記第１のヒータおよび前記第２のヒータから入射した熱を前記処理領域側に反射する有機膜形成装置。 A chamber that can maintain an atmosphere that is depressurized below atmospheric pressure,
An exhaust unit capable of exhausting the inside of the chamber,
A first heating section having at least one first heater provided inside the chamber;
A second heating unit provided inside the chamber, the second heating unit having at least one second heater and facing the first heating unit;
At least one first heat equalizing plate provided between the first heating unit and the second heating unit;
At least one second heat equalizing plate provided between the first heat equalizing plate and the second heating unit;
A work, which is between the first soaking plate and the second soaking plate and has a substrate and a solution containing an organic material and a solvent applied to the upper surface of the substrate, is supported. Processing area,
A first heating unit, a second heating unit, a first soaking plate, a second soaking plate, and a region surrounding the processing region, the region being provided inside the chamber; 1 reflector,
Equipped with
The first heat equalizing plate and the second heat equalizing plate radiate the heat incident from the first heater and the second heater to the processing area side, and the first reflecting plate is the first reflecting plate. An organic film forming apparatus that reflects the heat incident from the first heater and the second heater to the processing region side.
前記処理領域は、前記第１の均熱板と、前記第２の均熱板と、前記側部均熱板とで囲まれ、
前記第１の反射板は、前記第１の均熱板と、前記第２の均熱板と、前記側部均熱板とで囲まれた領域をさらに囲む請求項１記載の有機膜形成装置。 Further comprising a side heat equalizing plate provided on the side of the processing region,
The processing area is surrounded by the first heat equalizing plate, the second heat equalizing plate, and the side heat equalizing plate,
The organic film forming apparatus according to claim 1, wherein the first reflector further surrounds a region surrounded by the first heat equalizing plate, the second heat equalizing plate, and the side heat equalizing plate. ..
前記第１の反射板の前記第１のヒータ側の面、および前記第１の反射板の前記第２のヒータ側の面の反射率は、前記第１の均熱板の前記第１のヒータ側の面、および前記第２の均熱板の前記第２のヒータ側の面の反射率よりも高い請求項１または２に記載の有機膜形成装置。 The emissivity of the surface of the first soaking plate on the side of the first heater and the emissivity of the surface of the second soaking plate on the side of the second heater are the first emissivity of the first reflecting plate. Higher than the emissivity of the surface on the heater side and the surface of the first reflecting plate on the second heater side,
The reflectance of the surface of the first reflection plate on the side of the first heater and the reflectance of the surface of the first reflection plate on the side of the second heater are equal to those of the first heater of the first heat equalizing plate. 3. The organic film forming apparatus according to claim 1, wherein the reflectance is higher than the reflectance of the surface on the side and the surface of the second heat equalizing plate on the side of the second heater.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190042585A KR102231061B1 (en) | 2018-04-16 | 2019-04-11 | Apparatus for forming organic film |
| CN201910293044.0A CN110391132B (en) | 2018-04-16 | 2019-04-12 | Organic film forming apparatus |
| TW108113178A TWI740129B (en) | 2018-04-16 | 2019-04-16 | Organic film forming device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018078484 | 2018-04-16 | ||
| JP2018078484 | 2018-04-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019184229A JP2019184229A (en) | 2019-10-24 |
| JP2019184229A5 true JP2019184229A5 (en) | 2020-05-28 |
| JP6940541B2 JP6940541B2 (en) | 2021-09-29 |
Family
ID=68340650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019045511A Active JP6940541B2 (en) | 2018-04-16 | 2019-03-13 | Organic film forming device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6940541B2 (en) |
| KR (1) | KR102231061B1 (en) |
| TW (1) | TWI740129B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115116887A (en) | 2021-03-17 | 2022-09-27 | 芝浦机械电子装置株式会社 | Organic film forming apparatus and cleaning method for organic film forming apparatus |
| KR20230010579A (en) | 2021-07-12 | 2023-01-19 | 시바우라 메카트로닉스 가부시끼가이샤 | Apparatus for forming organic film, and manufacturing method of organic film |
| JP7366086B2 (en) * | 2021-07-29 | 2023-10-20 | 芝浦メカトロニクス株式会社 | Heat treatment equipment |
| JP2024049807A (en) | 2022-09-29 | 2024-04-10 | 芝浦メカトロニクス株式会社 | Heat Treatment Equipment |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3631847B2 (en) | 1996-05-28 | 2005-03-23 | 大日本印刷株式会社 | Vacuum drying equipment |
| TWI232509B (en) * | 2001-07-25 | 2005-05-11 | Tokyo Electron Ltd | Processing apparatus and processing method |
| JP4981477B2 (en) * | 2007-02-16 | 2012-07-18 | 三菱重工業株式会社 | Vacuum processing apparatus and substrate heating method |
| JP5084420B2 (en) * | 2007-09-21 | 2012-11-28 | 東京エレクトロン株式会社 | Load lock device and vacuum processing system |
| JP5478280B2 (en) * | 2010-01-27 | 2014-04-23 | 東京エレクトロン株式会社 | Substrate heating apparatus, substrate heating method, and substrate processing system |
| JP6138610B2 (en) * | 2013-07-10 | 2017-05-31 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment equipment |
| JP6639867B2 (en) * | 2015-10-30 | 2020-02-05 | 東京応化工業株式会社 | Substrate heating apparatus and substrate heating method |
-
2019
- 2019-03-13 JP JP2019045511A patent/JP6940541B2/en active Active
- 2019-04-11 KR KR1020190042585A patent/KR102231061B1/en active IP Right Grant
- 2019-04-16 TW TW108113178A patent/TWI740129B/en active
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