JP2019179791A - モジュールの製造方法及び光学モジュールの製造方法 - Google Patents
モジュールの製造方法及び光学モジュールの製造方法 Download PDFInfo
- Publication number
- JP2019179791A JP2019179791A JP2018066933A JP2018066933A JP2019179791A JP 2019179791 A JP2019179791 A JP 2019179791A JP 2018066933 A JP2018066933 A JP 2018066933A JP 2018066933 A JP2018066933 A JP 2018066933A JP 2019179791 A JP2019179791 A JP 2019179791A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- light
- curing
- layer
- cured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 80
- 230000003287 optical effect Effects 0.000 title claims description 112
- 229920005989 resin Polymers 0.000 claims abstract description 342
- 239000011347 resin Substances 0.000 claims abstract description 342
- 238000000034 method Methods 0.000 claims abstract description 67
- 238000010030 laminating Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 2
- 238000001723 curing Methods 0.000 description 134
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 83
- 230000004888 barrier function Effects 0.000 description 72
- 229920002050 silicone resin Polymers 0.000 description 58
- 238000010586 diagram Methods 0.000 description 54
- 239000000126 substance Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 230000009975 flexible effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 238000011900 installation process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007652 sheet-forming process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27332—Manufacturing methods by local deposition of the material of the layer connector in solid form using a powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
- H01L2224/2781—Cleaning, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32238—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
1層目の樹脂を本硬化させない範囲で硬化させる工程と、
2層目以降のN層目の樹脂について、(N−1)層目の樹脂に積層させ、積層した前記N層目の樹脂を本硬化させない範囲で硬化させる処理を繰り返す工程と、
前記N層目の樹脂を形成した後に、前記積層した前記N層の樹脂を総て本硬化させる工程と、を有する。
図1は、本発明の第1の実施形態に係るモジュールの製造方法の一例の一連の工程を示した図である。第1の実施形態においては、光透過性樹脂Aと光透過性樹脂Bを用いて、モジュールを製造した例について説明する。本実施形態に係るモジュールの製造方法は、種々の樹脂に適用することができ、光透過性樹脂への適用に限定されるものではないが、ここでは、光透過性樹脂A、Bを用いた例を挙げて説明する。光透過性樹脂は、LED(Light Emitting Diode)を用いた光学的半導体装置に多く利用され、用途の広い樹脂である。なお、本実施形態に係るモジュールの製造方法では、製造に用いる樹脂の硬化率特性を利用してモジュールを製造する。
次に、第2の実施形態に係るモジュールの製造方法について説明する。
図6は、第3の実施形態に係るモジュールの製造方法の一例を説明するための図である。第3の実施形態に係るモジュールの製造方法においても、第2の実施形態に係るモジュールの製造方法と同様に、バリア層付蛍光体シートを製造する方法について説明する。
次に、比較例として、従来のモジュールの製造方法について説明する。
次に、本実施形態に係るモジュールの製造方法を、光学的モジュールの製造工程に適用した実施形態について説明する。
図18は、光学アレイ260及びバックライトユニット270に第4の実施形態に係る光学モジュール250を適用した例を示した図である。図18(a)は、個片化した光学モジュール250を配列して光学アレイ260を構成し、これをバックライトユニット270に組み込んだ全体構成の一例を示した図であり、図18(b)は、バックライトユニット270に組み込まれた光学アレイ光学260を取り出した図である。
次に、第2の実施形態に係るモジュールの製造方法を実施した実施例について説明する。第2の実施形態と同様に、蛍光体シート81を1層目にハードニング(本硬化)させない範囲で形成し、バリアシート91を2層目にハードニング(本硬化)しない範囲で形成し、最後にハードニング(本硬化)してバリア層付蛍光体シート100を形成した。蛍光体シートに用いる光透過性樹脂80と、バリアシート91に用いる光透過性樹脂90は、同じ系のシリコーン樹脂とした。一方、比較例においては、蛍光体シート82のみを形成し、最初から本硬化した。樹脂は、実施例の光透過性樹脂80と同様にシリコーン樹脂とした。
20 2層目の光透過性樹脂
30 3層目の光透過性樹脂
40 4層目の光透過性樹脂
50 モジュール
60 金型
80、90 光透過性樹脂
81、82 蛍光体シート
91、92 バリアシート
100、101 バリア層付蛍光体シート
110 プリント配線板
150 LEDチップ
170、180 シリコーン樹脂
190 溝
200 白樹脂
250 光学モジュール
260〜268 光学アレイ
270 バックライトユニット
Claims (13)
- N層(Nは2以上の自然数)の樹脂を積層してなるモジュールの製造方法であって、
1層目の樹脂を本硬化させない範囲で硬化させる工程と、
2層目以降のN層目の樹脂について、(N−1)層目の樹脂に積層させ、積層した前記N層目の樹脂を本硬化させない範囲で硬化させる処理を繰り返す工程と、
前記N層目の樹脂を形成した後に、前記積層した前記N層の樹脂を総て本硬化させる工程と、を有する、モジュールの製造方法。 - 前記1層目の樹脂を本硬化させない範囲で硬化させる工程では、前記1層目の樹脂が固体化されるレベルまで前記1層目の樹脂を硬化させる請求項1に記載のモジュールの製造方法。
- 前記1層目の樹脂が固体化されるレベルは、50〜65%の範囲の硬化率に設定される請求項2に記載のモジュールの製造方法。
- 前記積層した前記N層目の樹脂を本硬化させない範囲で硬化させる処理では、前記N層目の樹脂が固体化されるレベルまで前記N層目の樹脂を硬化させる請求項1乃至3のいずれか一項に記載のモジュールの製造方法。
- 前記N層目の樹脂が固体化されるレベルは、50〜65%の範囲の硬化率に設定される請求項4に記載のモジュールの製造方法。
- 前記積層した前記N層目の樹脂を本硬化させない範囲で硬化させる処理を繰り返す工程は、前記積層した前記N層の樹脂の総てを本硬化させない範囲で硬化させる工程である請求項1乃至5のいずれか一項に記載のモジュールの製造方法。
- 前記積層した前記N層の樹脂の総てを本硬化させない範囲で硬化させる工程は、前記積層した前記N層の樹脂の総てを、50%〜95%の範囲の硬化率で硬化させる工程である請求項1乃至3のいずれか一項に記載のモジュールの製造方法。
- 前記積層した前記N層の樹脂を総て本硬化させる工程は、前記積層した前記N層の樹脂を総て95%を超える硬化率で硬化させる工程である請求項1乃至7のいずれか一項に記載のモジュールの製造方法。
- 前記N層の樹脂の総てが同一系列の樹脂である請求項1乃至8のいずれか一項に記載のモジュールの製造方法。
- 表面に複数の電極を有する基板上に発光素子をフェイスダウンで実装する第1工程と、
前記発光素子を含めて前記基板の実装面を光波長変換物質が混合された第1の光透過性樹脂で封止する第2工程と、
前記第1の光透過性樹脂の上面を第2の光透過性樹脂で覆う第3工程と、
前記発光素子を囲むように、前記第2の光透過性樹脂の上面から前記基板の所定深さまで到達する溝を形成する第4工程と、
前記溝に光反射性樹脂を充填するとともに前記第2の光透過性樹脂の上面を前記光反射性樹脂で覆う第5工程と、
前記第2の光透過性樹脂の上面を覆っている前記光反射性樹脂を除去する第6工程と、
前記溝に充填された前記光反射性樹脂の一部を残して外側面が前記光反射性樹脂で覆われるように前記光反射性樹脂に沿ってダイシングを行い、前記発光素子を個片化する第7工程と、を有し、
前記第2工程、前記第3工程及び前記第5工程において、前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂は、本硬化させない範囲で硬化させることにより形成され、
前記第5工程と前記第7工程との間に、前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を本硬化させる工程を更に有する、光学モジュールの製造方法。 - 前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を本硬化させない範囲で硬化させるレベルは、前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を固体化させるレベルである請求項10に記載の光学モジュールの製造方法。
- 前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を固体化させるレベルは、前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を50%〜95%の範囲の硬化率で硬化するレベルである請求項11に記載の光学モジュールの製造方法。
- 前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を本硬化させる工程は、前記第1の光透過性樹脂、前記第2の光透過性樹脂及び前記光反射性樹脂を95%を超える硬化率で硬化させる工程である請求項10乃至12のいずれか一項に記載の光学モジュールの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018066933A JP7136532B2 (ja) | 2018-03-30 | 2018-03-30 | モジュールの製造方法及び光学モジュールの製造方法 |
US16/357,741 US10714360B2 (en) | 2018-03-30 | 2019-03-19 | Method for manufacturing a module and an optical module |
CN201910252101.0A CN110323317B (zh) | 2018-03-30 | 2019-03-29 | 模块的制造方法和光学模块的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018066933A JP7136532B2 (ja) | 2018-03-30 | 2018-03-30 | モジュールの製造方法及び光学モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019179791A true JP2019179791A (ja) | 2019-10-17 |
JP7136532B2 JP7136532B2 (ja) | 2022-09-13 |
Family
ID=68057315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018066933A Active JP7136532B2 (ja) | 2018-03-30 | 2018-03-30 | モジュールの製造方法及び光学モジュールの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10714360B2 (ja) |
JP (1) | JP7136532B2 (ja) |
CN (1) | CN110323317B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6823262B2 (ja) * | 2017-03-15 | 2021-02-03 | ミツミ電機株式会社 | 光学モジュールの製造方法及び光学モジュール |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008071793A (ja) * | 2006-09-12 | 2008-03-27 | Toshiba Corp | 光半導体装置及びその製造方法 |
WO2009066430A1 (ja) * | 2007-11-19 | 2009-05-28 | Panasonic Corporation | 半導体発光装置および半導体発光装置の製造方法 |
JP2014064021A (ja) * | 2008-05-30 | 2014-04-10 | Sharp Corp | 発光装置、面光源および液晶表示装置 |
WO2016117526A1 (ja) * | 2015-01-19 | 2016-07-28 | 日本化薬株式会社 | 画像表示装置の製造方法、それに用いる硬化性樹脂組成物、タッチパネル及び画像表示装置 |
JP2016164963A (ja) * | 2015-02-27 | 2016-09-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4288912B2 (ja) * | 2002-08-08 | 2009-07-01 | 日立化成工業株式会社 | 配線板、半導体パッケージ用基板、半導体パッケージ及びそれらの製造方法 |
JP5478109B2 (ja) * | 2009-04-24 | 2014-04-23 | 株式会社ハウステック | 蓄光材配合成形品の製造方法、並びに蓄光材配合成形品 |
KR101499600B1 (ko) * | 2011-01-14 | 2015-03-06 | 제이엑스 닛코닛세키 에네루기 가부시키가이샤 | 미세 패턴 전사용 몰드의 제조 방법 및 이것을 사용한 회절 격자의 제조 방법, 및 상기 회절 격자를 가지는 유기 el 소자의 제조 방법 |
JP5753446B2 (ja) | 2011-06-17 | 2015-07-22 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP2013063606A (ja) * | 2011-09-20 | 2013-04-11 | Fujimori Kogyo Co Ltd | 接着シート積層体 |
WO2013073434A1 (ja) * | 2011-11-18 | 2013-05-23 | Jx日鉱日石エネルギー株式会社 | 有機el素子 |
KR101216601B1 (ko) * | 2012-08-02 | 2012-12-31 | 주식회사 앤앤드에프 | 일체형 광학 필름 제조 방법 |
JP6197422B2 (ja) * | 2013-07-11 | 2017-09-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および支持基板付きウェハ |
JP2015104881A (ja) * | 2013-11-29 | 2015-06-08 | 三菱樹脂株式会社 | 熱成形体および熱成形体の製造方法 |
KR102351666B1 (ko) * | 2014-07-14 | 2022-01-14 | 삼성디스플레이 주식회사 | 터치 패널을 구비한 플랙서블 표시 장치 |
US10009523B2 (en) * | 2015-05-11 | 2018-06-26 | Samsung Electro-Mechanics Co., Ltd. | Electronic module and method of manufacturing the same |
JP6713872B2 (ja) * | 2015-07-31 | 2020-06-24 | 日東電工株式会社 | 積層フィルム、積層フィルムの製造方法、光学部材、画像表示装置、光学部材の製造方法および画像表示装置の製造方法 |
JP2017069003A (ja) * | 2015-09-29 | 2017-04-06 | 日東電工株式会社 | フレキシブル発光デバイス、照明装置および画像表示装置 |
JP6729143B2 (ja) * | 2015-10-29 | 2020-07-22 | 三菱マテリアル株式会社 | 樹脂組成物、接合体及び半導体装置 |
TWI722048B (zh) * | 2016-06-10 | 2021-03-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
-
2018
- 2018-03-30 JP JP2018066933A patent/JP7136532B2/ja active Active
-
2019
- 2019-03-19 US US16/357,741 patent/US10714360B2/en active Active
- 2019-03-29 CN CN201910252101.0A patent/CN110323317B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008071793A (ja) * | 2006-09-12 | 2008-03-27 | Toshiba Corp | 光半導体装置及びその製造方法 |
WO2009066430A1 (ja) * | 2007-11-19 | 2009-05-28 | Panasonic Corporation | 半導体発光装置および半導体発光装置の製造方法 |
JP2014064021A (ja) * | 2008-05-30 | 2014-04-10 | Sharp Corp | 発光装置、面光源および液晶表示装置 |
WO2016117526A1 (ja) * | 2015-01-19 | 2016-07-28 | 日本化薬株式会社 | 画像表示装置の製造方法、それに用いる硬化性樹脂組成物、タッチパネル及び画像表示装置 |
JP2016164963A (ja) * | 2015-02-27 | 2016-09-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20190304806A1 (en) | 2019-10-03 |
JP7136532B2 (ja) | 2022-09-13 |
US10714360B2 (en) | 2020-07-14 |
CN110323317B (zh) | 2024-05-03 |
CN110323317A (zh) | 2019-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6658723B2 (ja) | 発光装置 | |
JP6711369B2 (ja) | 発光装置ならびに発光装置の製造方法 | |
JP6554914B2 (ja) | 発光装置とその製造方法 | |
US10559722B2 (en) | Light-emitting device | |
JP2011243977A (ja) | 波長変換層を有する発光ダイオードチップとその製造方法、及びそれを含むパッケージ及びその製造方法 | |
US9660148B2 (en) | Method for manufacturing light emitting device, and light emitting device | |
JP6947995B2 (ja) | 発光装置 | |
WO2014203793A1 (ja) | 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法 | |
JP2023089162A (ja) | 発光モジュール及び発光モジュールの製造方法 | |
US11233184B2 (en) | Light-emitting device and method for manufacturing the same | |
JP6575828B2 (ja) | 発光装置及び発光モジュール | |
US10332824B2 (en) | Lead frame | |
WO2018168473A1 (ja) | 光学モジュールの製造方法及び光学モジュール | |
US10840420B2 (en) | Method for manufacturing light emitting device | |
US11315913B2 (en) | Light emitting device and method of manufacturing the light emitting device | |
JP2019179791A (ja) | モジュールの製造方法及び光学モジュールの製造方法 | |
JP6349953B2 (ja) | 発光装置の製造方法 | |
US11367821B2 (en) | Light emitting device | |
JP7193698B2 (ja) | 発光装置及び発光装置の製造方法 | |
JP2009182072A (ja) | 半導体発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20190530 |
|
A625 | Written request for application examination (by other person) |
Free format text: JAPANESE INTERMEDIATE CODE: A625 Effective date: 20210315 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220311 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220802 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220829 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7136532 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |