JP2019149518A - Method for processing processing target object - Google Patents

Method for processing processing target object Download PDF

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JP2019149518A
JP2019149518A JP2018034805A JP2018034805A JP2019149518A JP 2019149518 A JP2019149518 A JP 2019149518A JP 2018034805 A JP2018034805 A JP 2018034805A JP 2018034805 A JP2018034805 A JP 2018034805A JP 2019149518 A JP2019149518 A JP 2019149518A
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workpiece
grinding
protection member
chip
chips
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JP7075242B2 (en
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昌充 上里
Masamitsu Ueno
昌充 上里
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2018034805A priority Critical patent/JP7075242B2/en
Priority to KR1020190008592A priority patent/KR102586315B1/en
Priority to CN201910128396.0A priority patent/CN110211926B/en
Priority to TW108106378A priority patent/TWI787471B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Laser Beam Processing (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

To prevent a polishing water containing polishing dust from entering the gap between chips adjacent to each other even if a processing target object is formed to have a finished thickness.SOLUTION: The method for processing a processing target object includes the steps of: protecting a surface Wa of a processing target object W by a surface protecting member 1; causing the adhesive material of the surface protecting member 1 to be cured and contracted; forming an altered layer M in the inside of the processing target object W; polishing the back surface Wb of the processing target object W so that the object has a chip finished thickness; and dividing the processing target object W into chips C and expanding the space 7 between chips C. Since the adhesive material of the surface protecting member 1 is caused to be cured and contracted in the protecting member heating step, a non-divided region, which is a region where the division into chips is not performed completely, is formed in the processing target object W in the back surface polishing step. This prevents a space from generating between chips C at the time of polishing a back surface and prevents polishing dust from being attached to a side surface of the chips C.SELECTED DRAWING: Figure 4

Description

本発明は、被加工物の加工方法に関する。   The present invention relates to a method for processing a workpiece.

半導体デバイス製造工程においては、略円板形状である被加工物の表面に格子状に配列されたストリートと呼ばれる分割予定ラインによって複数の領域が区画され、この区画された領域にＩＣ、ＬＳＩ等の回路（機能素子）が形成される。そして、被加工物を分割予定ラインに沿って切断することにより回路が形成された領域を分割して個々のチップを製造している。   In the semiconductor device manufacturing process, a plurality of regions are defined by division-scheduled lines called streets arranged in a lattice pattern on the surface of a workpiece having a substantially disk shape, and ICs, LSIs, and the like are defined in the partitioned regions. A circuit (functional element) is formed. Then, by cutting the workpiece along the planned dividing line, the area where the circuit is formed is divided to manufacture individual chips.

被加工物を分割予定ラインに沿って切断する方法として、分割すべき領域の内部に集光点を合わせて被加工物に対して透過性を有するパルスレーザ光線を照射するレーザ加工方法がある。このレーザ加工方法を用いた分割方法では、被加工物の一方の面側から内部に集光点を合わせて被加工物に対して透過性を有する赤外光領域のパルスレーザ光線を照射し、被加工物の内部に分割予定ラインに沿って変質層を連続的に形成し、この変質層が形成されることによって強度が低下した分割予定ラインに沿って、被加工物の裏面を研削する応力によって、被加工物を破断して個々のチップへと分割することができる（例えば、下記の特許文献１を参照）。   As a method of cutting a workpiece along a division line, there is a laser machining method in which a focused laser beam is placed inside a region to be divided and a pulsed laser beam having transparency to the workpiece is irradiated. In the division method using this laser processing method, a pulse laser beam in an infrared region having a transparency with respect to the workpiece is irradiated by aligning the condensing point from one side of the workpiece to the inside, Stress that continuously forms a deteriorated layer along the planned dividing line inside the work piece, and grinds the back surface of the work piece along the planned dividing line whose strength has decreased due to the formation of the deteriorated layer. Thus, the workpiece can be broken and divided into individual chips (see, for example, Patent Document 1 below).

特許４７３３９３４号公報Japanese Patent No. 4733934

しかしながら、分割されたチップ間には隙間が生じるため、チップ分割後に仕上がり厚さまで研削を実施するとチップ間の隙間に研削屑を含む研削水が浸入してチップ側面に研削屑が付着する。チップ側面に付着した研削屑は研削装置の洗浄機構で洗浄しても取り除くことは非常に困難である。   However, since a gap is generated between the divided chips, if grinding is performed to the finished thickness after the chip is divided, the grinding water containing the grinding waste enters the gap between the chips, and the grinding waste adheres to the side surface of the chip. Grinding debris adhering to the side surface of the chip is very difficult to remove even if it is cleaned by the cleaning mechanism of the grinding apparatus.

本発明は、上記の事情に鑑みてなされたもので、被加工物を仕上がり厚さに形成しても、隣り合うチップ間の隙間に研削屑を含む研削水が浸入しないようにすることを目的としている。   The present invention has been made in view of the above circumstances, and it is an object of the present invention to prevent grinding water containing grinding waste from entering a gap between adjacent chips even when a workpiece is formed to a finished thickness. It is said.

本発明は、表面に格子状に形成された分割予定ラインによって区画された領域に機能素子が形成された被加工物を、分割予定ラインに沿って個々のチップに分割する被加工物の加工方法であって、該被加工物の表面の該機能素子が形成された領域を表面保護部材で覆う表面保護ステップと、該表面保護部材の粘着材を硬化収縮させる保護部材加熱ステップと、該被加工物の裏面側から分割予定ラインに沿って該被加工物に対して透過性を有するレーザ光線を照射し、チップの仕上がり厚さに相当する位置より裏面側に変質層を形成する変質層形成ステップと、変質層の形成された被加工物の裏面を研削し、チップの仕上がり厚さに形成する裏面研削ステップと、該被加工物を個々のチップに分割するとともにチップ間隔を拡張させる保護部材拡張ステップと、を含み、保護部材加熱ステップで該表面保護部材の該粘着材を硬化収縮させることで、該裏面研削ステップでチップ分割が完全にされない未分割領域が被加工物に形成されることを特徴とする。上記表面保護部材は、粘着テープであることが好ましい。   The present invention relates to a processing method for a workpiece, in which a workpiece on which functional elements are formed in a region partitioned by a predetermined division line formed in a lattice pattern on the surface is divided into individual chips along the predetermined division line. A surface protection step for covering the region where the functional element is formed on the surface of the workpiece with a surface protection member, a protection member heating step for curing and shrinking the adhesive material of the surface protection member, and the workpiece A deteriorated layer forming step of irradiating a laser beam having transparency to the workpiece from the back surface side of the object along the division line and forming a deteriorated layer on the back surface side from a position corresponding to the finished thickness of the chip And a back grinding step for grinding the back surface of the workpiece on which the altered layer is formed to form a finished thickness of the chip, and a protective member that divides the workpiece into individual chips and expands the chip interval. An undivided region that is not completely divided in the back grinding step is formed in the work piece by curing and shrinking the adhesive material of the surface protective member in the protective member heating step. It is characterized by. The surface protection member is preferably an adhesive tape.

本発明に係る被加工物の加工方法は、被加工物の表面の機能素子が形成された領域を表面保護部材で覆う表面保護ステップと、表面保護部材の粘着材を硬化収縮させる保護部材加熱ステップと、被加工物の裏面側から分割予定ラインに沿って被加工物に対して透過性を有するレーザ光線を照射し、チップの仕上がり厚さに相当する位置より裏面側に変質層を形成する変質層形成ステップと、変質層の形成された被加工物の裏面を研削し、チップの仕上がり厚さに形成する裏面研削ステップと、被加工物を個々のチップに分割するとともにチップ間隔を拡張させる保護部材拡張ステップとを含み、保護部材加熱ステップで表面保護部材の粘着材を硬化収縮させることで、裏面研削ステップでチップ分割が完全にされない未分割領域が被加工物に形成されるように構成したため、裏面研削時に変質層から生じる亀裂が被加工物の表面まで伸展するのを防いでチップ間に隙間を発生させない。このように、本発明によれば、研削屑を含む研削水がチップ側面に侵入するおそれを防止して、チップ側面に研削屑を付着するのを防止することができる。上記表面保護部材が、粘着テープにより構成されている場合は、上記表面保護ステップを容易に実施することができる。   A processing method for a workpiece according to the present invention includes a surface protection step for covering a region where a functional element on the surface of the workpiece is formed with a surface protection member, and a protection member heating step for curing and shrinking the adhesive material of the surface protection member. Then, from the back side of the work piece, a laser beam that is transmissive to the work piece along the line to be divided is irradiated to form a deteriorated layer on the back side from the position corresponding to the finished thickness of the chip. A layer forming step, a back surface grinding step for grinding the back surface of the workpiece on which the deteriorated layer is formed to form a finished thickness of the chip, and a protection for dividing the work piece into individual chips and extending the chip interval. Including a member expansion step, and by curing and shrinking the adhesive material of the surface protection member in the protection member heating step, an undivided region in which the chip division is not completely performed in the back surface grinding step becomes a workpiece. Since thus constructed is made, does not generate a gap between the chips to prevent cracks that result from altered layer at the time of grinding the back surface is to stretch to the surface of the workpiece. Thus, according to the present invention, it is possible to prevent the grinding water containing grinding waste from entering the side surface of the chip and prevent the grinding waste from adhering to the side surface of the chip. When the surface protection member is formed of an adhesive tape, the surface protection step can be easily performed.

表面保護ステップを示す斜視図である。It is a perspective view which shows a surface protection step. 保護部材加熱ステップを示す断面図である。It is sectional drawing which shows a protection member heating step. 変質層形成ステップを示す斜視図および断面図である。It is the perspective view and sectional drawing which show a deteriorated layer formation step. 裏面研削ステップを示す斜視図および断面図である。It is the perspective view and sectional drawing which show a back surface grinding step. 保護部材拡張ステップを示す断面図である。It is sectional drawing which shows a protection member expansion step.

図１に示す被加工物Ｗは、円形板状の基板を有し、基板の表面Ｗａに格子状に形成された複数の分割予定ラインＳによって区画された各領域にそれぞれ機能素子（図示の例ではデバイスＤ）が形成されている。被加工物Ｗの表面Ｗａと反対側の裏面Ｗｂは、所定の加工が施される被加工面となっている。被加工物Ｗの材質、厚み及び大きさは特に限定されるものではない。以下では、被加工物Ｗを、分割予定ラインＳに沿って個々のチップに分割する被加工物の加工方法について説明する。   A workpiece W shown in FIG. 1 has a circular plate-like substrate, and a functional element (example shown in the figure) is provided in each region defined by a plurality of division lines S formed in a lattice shape on the surface Wa of the substrate. Then, a device D) is formed. A back surface Wb opposite to the front surface Wa of the workpiece W is a processing surface on which a predetermined processing is performed. The material, thickness, and size of the workpiece W are not particularly limited. Below, the processing method of the workpiece which divides the workpiece W into each chip | tip along the division | segmentation scheduled line S is demonstrated.

（１） 表面保護ステップ
図１に示すように、被加工物Ｗの表面ＷａのデバイスＤが形成された領域を表面保護部材１で覆う。本実施形態に示す表面保護部材１は、粘着性を有し、かつ、被加工物Ｗと略同径の大きさを有している。また、表面保護部材１は、例えば、ポリオレフィンやポリ塩化ビニル等なる基材に粘着材が積層された粘着テープであることが好ましい。表面保護部材１を被加工物Ｗの表面Ｗａに貼着して、その表面Ｗａの全面を覆うことにより、各デバイスＤが保護される。表面保護部材１が粘着テープにより構成されているため、表面保護ステップを容易に実施可能となる。表面保護ステップは、図示していないが、例えば、粘着テープを被加工物Ｗの表面Ｗａに貼着するテープ貼り機において実施される。 (1) Surface Protection Step As shown in FIG. 1, the surface protection member 1 covers the region where the device D of the surface Wa of the workpiece W is formed. The surface protection member 1 shown in the present embodiment has adhesiveness and has a size approximately the same diameter as the workpiece W. Moreover, it is preferable that the surface protection member 1 is an adhesive tape in which an adhesive material is laminated on a base material such as polyolefin or polyvinyl chloride. Each device D is protected by sticking the surface protection member 1 to the surface Wa of the workpiece W and covering the entire surface Wa. Since the surface protection member 1 is made of an adhesive tape, the surface protection step can be easily performed. Although not shown, the surface protection step is performed, for example, in a tape applicator for attaching an adhesive tape to the surface Wa of the workpiece W.

（２） 保護部材加熱ステップ
図２に示すように、被加工物Ｗに貼着された表面保護部材１側から加熱部材２の上に載置して、表面保護部材１を加熱する。加熱部材２は、例えば赤外線ヒータからなる。加熱部材２では、表面保護部材１を例えば８０℃で１分間程度加熱することにより、表面保護部材１の粘着材を硬化収縮させる。これにより、表面保護部材１の粘着材が硬くなることから、後述する裏面研削ステップを実施するときに、研削時の応力の影響を小さくして隣り合うチップの動きを抑制することができる。加熱部材２は、表面保護部材１に温風を噴射して粘着材を加温させるヒータで構成してもよい。保護部材加熱ステップは、上記したテープ貼り機内で実施してもよいし、後記のレーザ加工装置３内で実施してもよい。 (2) Protection member heating step As shown in FIG. 2, the surface protection member 1 is placed on the heating member 2 from the side of the surface protection member 1 adhered to the workpiece W to heat the surface protection member 1. The heating member 2 is made of, for example, an infrared heater. In the heating member 2, the pressure-sensitive adhesive material of the surface protection member 1 is cured and contracted by heating the surface protection member 1 at 80 ° C. for about 1 minute, for example. Thereby, since the adhesive material of the surface protection member 1 becomes hard, when performing the back surface grinding step mentioned later, the influence of the stress at the time of grinding can be made small and the movement of an adjacent chip | tip can be suppressed. The heating member 2 may be configured by a heater that heats the adhesive material by spraying hot air on the surface protection member 1. The protective member heating step may be performed in the tape applicator described above or may be performed in the laser processing apparatus 3 described later.

（３） 変質層形成ステップ
次いで、図３（ａ）に示すレーザ加工装置３に被加工物Ｗを搬送し、レーザ加工によって被加工物Ｗの内部に変質層Ｍを形成する。レーザ加工装置３は、被加工物Ｗを保持する保持テーブル３０と、保持テーブル３０の上方側に配設されたレーザ加工手段３１とを少なくとも備えている。保持テーブル３０の上面は、図示しない吸引源からの吸引作用を受けて被加工物Ｗを吸引保持する保持面３０ａとなっている。保持テーブル３０の下方には、保持テーブル３０とレーザ加工手段３１とを鉛直方向と直交する水平方向（Ｘ軸方向及びＹ軸方向）に相対移動させる移動手段が接続されている。 (3) Altered Layer Formation Step Next, the workpiece W is conveyed to the laser processing apparatus 3 shown in FIG. 3A, and the altered layer M is formed inside the workpiece W by laser processing. The laser processing apparatus 3 includes at least a holding table 30 that holds the workpiece W and laser processing means 31 that is disposed above the holding table 30. The upper surface of the holding table 30 is a holding surface 30a that receives a suction action from a suction source (not shown) and sucks and holds the workpiece W. Below the holding table 30 is connected moving means for relatively moving the holding table 30 and the laser processing means 31 in the horizontal direction (X-axis direction and Y-axis direction) perpendicular to the vertical direction.

レーザ加工手段３１は、保持テーブル３０に保持された被加工物Ｗに対して透過性を有する波長のレーザ光線ＬＢを照射するレーザヘッド３２と、先端にレーザヘッド３２が取り付けられたケーシング３３とを備えている。ケーシング３３の内部には、レーザ光線ＬＢを発振する発振器及びレーザ光線ＬＢの出力を調整する出力調整器が収容され、レーザヘッド３２の内部には、発振器から発振されたレーザ光線ＬＢを集光するための集光レンズが内蔵されている。また、レーザ加工手段３１は、集光レンズによって集光されるレーザ光線ＬＢの集光点の位置を調整するための位置調整ユニット（不図示）を備えている。ケーシング３３の側方には、撮像手段３４が配設されている。撮像手段３４は、例えばＣＣＤイメージセンサを内蔵した赤外線カメラである。   The laser processing means 31 includes a laser head 32 that irradiates a laser beam LB having a wavelength that is transmissive to the workpiece W held on the holding table 30, and a casing 33 that has the laser head 32 attached to the tip. I have. The casing 33 accommodates an oscillator that oscillates the laser beam LB and an output adjuster that adjusts the output of the laser beam LB. The laser head 32 condenses the laser beam LB oscillated from the oscillator. A condensing lens is built in. The laser processing means 31 includes a position adjustment unit (not shown) for adjusting the position of the condensing point of the laser beam LB condensed by the condensing lens. An imaging unit 34 is disposed on the side of the casing 33. The imaging means 34 is an infrared camera with a built-in CCD image sensor, for example.

変質層形成ステップを実施する際には、被加工物Ｗは表面Ｗａ側を下にして表面保護部材１を介して保持テーブル３０の保持面３０ａに吸引保持される。保持テーブル３０を撮像手段３４の直下に位置づけ、撮像手段３４により被加工物Ｗを上方から撮像し、パターンマッチング等の画像処理を行うことにより、レーザ光線ＬＢを照射すべき領域（分割予定ラインＳ）を検出する。   When performing the deteriorated layer forming step, the workpiece W is sucked and held on the holding surface 30a of the holding table 30 via the surface protection member 1 with the surface Wa side down. The holding table 30 is positioned immediately below the imaging unit 34, the workpiece W is imaged from above by the imaging unit 34, and image processing such as pattern matching is performed, whereby the region to be irradiated with the laser beam LB (division planned line S). ) Is detected.

次いで、レーザヘッド３２を被加工物Ｗに接近する方向に下降させ、図３（ｂ）に示すように、被加工物Ｗに対して透過性を有する波長のレーザ光線ＬＢの集光点を被加工物Ｗの内部の所定位置に位置づけた状態で、保持テーブル３０を所定の加工送り速度でＸ軸方向に加工送りしながら、レーザヘッド３２により被加工物Ｗの裏面Ｗｂ側から図１に示した分割予定ラインＳに沿って照射して、チップの仕上がり厚さに相当する位置より裏面Ｗｂ側に変質層Ｍを形成する。変質層Ｍは、被加工物Ｗの内部の強度や物理的な特性が変化した領域であり、被加工物Ｗを個々のチップへと分割する際の分割起点となる。   Next, the laser head 32 is lowered in a direction approaching the workpiece W, and a condensing point of a laser beam LB having a wavelength that is transmissive to the workpiece W is applied as shown in FIG. FIG. 1 shows from the rear surface Wb side of the workpiece W by the laser head 32 while feeding the holding table 30 in the X-axis direction at a predetermined processing feed speed while being positioned at a predetermined position inside the workpiece W. Irradiation is performed along the planned division line S, and the altered layer M is formed on the back surface Wb side from the position corresponding to the finished thickness of the chip. The altered layer M is a region where the internal strength and physical characteristics of the workpiece W have changed, and serves as a starting point for dividing the workpiece W into individual chips.

一本の分割予定ラインＳに沿ってレーザ光線ＬＢを照射して変質層Ｍを形成する毎に、保持テーブル３０をＹ軸方向に割り出し送りして次の分割予定ラインＳに沿ってレーザ光線ＬＢを照射する。Ｘ軸方向に向く全ての分割予定ラインＳに対してレーザ光線ＬＢの照射が完了したら、図３（ａ）に示す保持テーブル３０を９０°回転させ、Ｙ軸方向に向いていた分割予定ラインＳをＸ軸方向に向かせる。そして、全ての分割予定ラインＳに沿って上記同様のレーザ加工を繰り返し行い、分割予定ラインＳに沿った変質層Ｍを形成する。   Each time the deteriorated layer M is formed by irradiating the laser beam LB along one scheduled division line S, the holding table 30 is indexed and fed in the Y-axis direction, and the laser beam LB along the next scheduled division line S. Irradiate. When the irradiation of the laser beam LB is completed for all the division lines S directed in the X axis direction, the holding table 30 shown in FIG. 3A is rotated by 90 °, and the division lines S directed in the Y axis direction are rotated. Is directed in the X-axis direction. Then, the laser processing similar to the above is repeated along all the planned division lines S, and the altered layer M along the planned division line S is formed.

（４） 裏面研削ステップ
次に、図４（ａ）に示す研削装置４を用いて、被加工物Ｗの裏面Ｗｂを研削してチップの仕上がり厚さに形成する。研削装置４は、被加工物Ｗを保持する保持テーブル４０と、保持テーブル４０を回転させる回転手段４１と、保持テーブル４０に保持された被加工物Ｗに対して研削を施す研削手段４２とを備えている。保持テーブル４０の上面は、図示しない吸引源からの吸引作用を受けて被加工物Ｗを吸引保持する保持面４０ａとなっている。 (4) Back Surface Grinding Step Next, the back surface Wb of the workpiece W is ground using the grinding device 4 shown in FIG. The grinding apparatus 4 includes a holding table 40 that holds the workpiece W, a rotating means 41 that rotates the holding table 40, and a grinding means 42 that performs grinding on the workpiece W held on the holding table 40. I have. The upper surface of the holding table 40 serves as a holding surface 40a that sucks and holds the workpiece W by receiving a suction action from a suction source (not shown).

研削手段４２は、保持面４０ａと直交する鉛直方向の軸心を有するスピンドル４３と、スピンドル４３の下端にマウント４４を介して装着された研削ホイール４５と、研削ホイール４５の下部に環状に固着された研削砥石４６とを備えている。研削手段４２には、図示しない昇降手段が接続され、昇降手段によって研削ホイール４５を回転させながら研削手段４２の全体を昇降させることができる。   The grinding means 42 is fixed in a ring shape to a spindle 43 having a vertical axis perpendicular to the holding surface 40a, a grinding wheel 45 attached to the lower end of the spindle 43 via a mount 44, and a lower part of the grinding wheel 45. A grinding wheel 46. Elevating means (not shown) is connected to the grinding means 42, and the entire grinding means 42 can be raised and lowered while rotating the grinding wheel 45 by the raising and lowering means.

被加工物Ｗを研削する場合は、図４（ｂ）に示すように、被加工物Ｗの表面Ｗａに貼着された表面保護部材１側を保持テーブル４０の保持面４０ａで保持して、被加工物Ｗの裏面Ｗｂを上向きに露出させ、保持テーブル４０を例えば矢印Ａ方向に回転させる。次いで、研削手段４２は、研削ホイール４５を例えば矢印Ａ方向に回転させながら、所定の研削送り速度で下降させ、回転する研削砥石４６で被加工物Ｗの裏面Ｗｂをチップの仕上がり厚さに至るまで押圧しながら研削する。被加工物Ｗの研削中は、図示していないが、回転する研削砥石４６と被加工物Ｗとの接触面に研削水を供給する。   When grinding the workpiece W, as shown in FIG. 4B, the surface protection member 1 side adhered to the surface Wa of the workpiece W is held by the holding surface 40a of the holding table 40, The back surface Wb of the workpiece W is exposed upward, and the holding table 40 is rotated in the direction of arrow A, for example. Next, the grinding means 42 lowers the grinding wheel 45 at a predetermined grinding feed speed while rotating the grinding wheel 45 in the direction of arrow A, for example, and the rotating grinding wheel 46 brings the back surface Wb of the workpiece W to the finished thickness of the chip. Grind while pressing. While the workpiece W is being ground, although not shown, grinding water is supplied to the contact surface between the rotating grinding wheel 46 and the workpiece W.

裏面研削ステップでは、上記保護部材加熱ステップで表面保護部材１の粘着材を硬化収縮させており、研削加工が進んで被加工物Ｗが仕上がり厚さに形成されて研削時の応力が表面保護部材１に作用しても表面保護部材１が撓まないため、チップの動きを抑制しチップ分割が完全にされない未分割領域が被加工物Ｗに形成される。この未分割領域では、隣り合うチップ間に隙間が生じず、研削屑が混入した研削水が隙間に浸入するおそれがない。もっとも、被加工物Ｗが仕上がり厚さに達すると、被加工物Ｗには変質層Ｍが起点となってチップに分割される領域も部分的には生じるが、本実施形態に示す裏面研削ステップでは、表面保護部材１の粘着材が硬くなっているため、被加工物Ｗが全体として円形板状の形態を保ちながら被加工物Ｗを仕上がり厚さに形成することができる。   In the back surface grinding step, the adhesive material of the surface protection member 1 is cured and shrunk in the protection member heating step, and the workpiece W is formed to a finished thickness by the progress of the grinding process, so that the stress during grinding is affected by the surface protection member. Since the surface protection member 1 does not bend even if it acts on 1, the movement of the chip is suppressed, and an undivided region where the chip is not completely divided is formed in the workpiece W. In this undivided region, there is no gap between adjacent chips, and there is no possibility that the grinding water mixed with the grinding waste enters the gap. Of course, when the workpiece W reaches the finished thickness, the workpiece W partially has a region divided into chips starting from the altered layer M, but the back grinding step shown in the present embodiment. Then, since the adhesive material of the surface protection member 1 is hard, the workpiece W can be formed in a finished thickness while the workpiece W maintains a circular plate shape as a whole.

（５） 保護部材拡張ステップ
図５（ａ）に示すように、例えば拡張装置５を用いて、被加工物Ｗを個々のチップＣに分割するとともにチップ間隔を拡張させる。拡張装置５は、被加工物Ｗを下方から支持する支持テーブル５０と、支持テーブル５０の外周側に配設され中央に開口を有するフレームＦが載置されるフレーム載置台５１と、フレーム載置台５１に載置されたフレームＦをクランプするクランプ部５２と、フレーム載置台５１の下部に連結されフレーム載置台５１を上下方向に昇降させる昇降手段５３とを備えている。昇降手段５３は、シリンダ５３ａと、シリンダ５３ａにより昇降駆動されるピストン５３ｂとにより構成され、ピストン５３ｂが上下に移動することにより、フレーム載置台５１を昇降させることができる。 (5) Protection Member Expansion Step As shown in FIG. 5A, for example, using the expansion device 5, the workpiece W is divided into individual chips C and the chip interval is expanded. The expansion device 5 includes a support table 50 that supports the workpiece W from below, a frame mounting table 51 on which the frame F disposed on the outer peripheral side of the support table 50 and having an opening at the center is mounted, and a frame mounting table The clamp part 52 which clamps the flame | frame F mounted in 51, and the raising / lowering means 53 connected to the lower part of the frame mounting base 51 and raising / lowering the frame mounting base 51 to the up-down direction are provided. The elevating means 53 includes a cylinder 53a and a piston 53b that is driven up and down by the cylinder 53a, and the frame mounting table 51 can be raised and lowered by moving the piston 53b up and down.

拡張装置５に被加工物Ｗを搬送する際には、被加工物Ｗの表裏を反転させて、フレームＦに貼着され開口から露出したテープＴの上に被加工物Ｗの裏面Ｗｂを貼着するとともに、被加工物Ｗの表面Ｗａから図４に示した表面保護部材１を引き剥がす。このようにして、テープＴを介してフレームＦと被加工物Ｗとを一体に形成しておく。裏面研削ステップを実施した被加工物Ｗは、完全には分割されていないが、隣り合うチップＣの間に図４（ａ）に示した変質層Ｍから被加工物Ｗの厚さ方向に亀裂６が生じている。この亀裂６は、被加工物Ｗの表面Ｗａにまでは伸展していない。   When transporting the workpiece W to the expansion device 5, the front and back of the workpiece W are reversed, and the back surface Wb of the workpiece W is pasted on the tape T that is stuck to the frame F and exposed from the opening. At the same time, the surface protection member 1 shown in FIG. 4 is peeled off from the surface Wa of the workpiece W. In this way, the frame F and the workpiece W are integrally formed via the tape T. The workpiece W subjected to the back grinding step is not completely divided, but cracks are formed between the adjacent chips C in the thickness direction of the workpiece W from the altered layer M shown in FIG. 6 has occurred. The crack 6 does not extend to the surface Wa of the workpiece W.

被加工物Ｗを、テープＴを介して被加工物Ｗの裏面Ｗｂ側を支持テーブル５０に載置するとともに、フレームＦをフレーム載置台５１に載置する。クランプ部５２によってフレームＦの上面を押さえて動かないように固定する。図５（ｂ）に示すように、ピストン５３ｂが下方に移動しフレーム載置台５１を下降させ、支持テーブル５０に対して相対的にフレーム載置台５１を下降させる。これにより、テープＴが放射状に拡張されると、被加工物Ｗに放射方向の外力が付与され、被加工物Ｗが亀裂６に沿って個々のチップＣに分割される。被加工物ＷのチップＣへの完全分割は、隣り合うチップＣの間に亀裂６が入っているため、テープＴを拡張することで容易に行うことができる。所定の拡張量だけテープＴを拡張することにより、隣り合うチップＣの間のチップ間隔７を拡張させる。そして、全ての隣り合うチップＣの間にチップ間隔７を形成したら、保護部材拡張ステップが完了する。分割されたチップＣは、図示しない搬出手段等によりピックアップされて次の工程に搬送される。   The workpiece W is placed on the support table 50 on the back surface Wb side of the workpiece W via the tape T, and the frame F is placed on the frame placing table 51. The upper surface of the frame F is pressed by the clamp portion 52 and fixed so as not to move. As shown in FIG. 5B, the piston 53 b moves downward to lower the frame mounting table 51 and lower the frame mounting table 51 relative to the support table 50. Thus, when the tape T is radially expanded, an external force in the radial direction is applied to the workpiece W, and the workpiece W is divided into individual chips C along the cracks 6. The complete division of the workpiece W into the chips C can be easily performed by expanding the tape T because the cracks 6 are formed between the adjacent chips C. By expanding the tape T by a predetermined expansion amount, the chip interval 7 between the adjacent chips C is expanded. And if the chip | tip space | interval 7 is formed between all the adjacent chips | tips C, a protection member expansion step will be completed. The divided chips C are picked up by unillustrated unloading means and transferred to the next process.

以上のとおり、本発明に係る被加工物の加工方法は、被加工物Ｗの表面ＷａのデバイスＤが形成された領域を表面保護部材１で覆う表面保護ステップと、表面保護部材１の粘着材を硬化収縮させる保護部材加熱ステップと、被加工物Ｗの裏面Ｗｂ側から分割予定ラインＳに沿って被加工物Ｗに対して透過性を有するレーザ光線ＬＢを照射し、チップの仕上がり厚さに相当する位置より裏面Ｗｂ側に変質層Ｍを形成する変質層形成ステップと、変質層Ｍの形成された被加工物Ｗの裏面Ｗｂを研削し、チップの仕上がり厚さに形成する裏面研削ステップと、被加工物Ｗを個々のチップＣに分割するとともにチップ間隔７を拡張させる保護部材拡張ステップとを含み、保護部材加熱ステップで表面保護部材１の粘着材を硬化収縮させることで、裏面研削ステップでチップ分割が完全にされない未分割領域が被加工物に形成されるように構成したため、裏面研削時に変質層Ｍから生じる亀裂６が被加工物Ｗの表面Ｗａまで伸展するのを防いでチップＣ間に隙間を発生させない。したがって、研削屑を含む研削水がチップＣの側面に侵入するおそれを防止して、チップＣの側面に研削屑を付着するのを防止することができる。   As mentioned above, the processing method of the workpiece which concerns on this invention is the surface protection step which covers the area | region in which the device D of the surface Wa of the workpiece W was formed with the surface protection member 1, and the adhesive material of the surface protection member 1 A protective member heating step for curing and shrinking the substrate, and irradiating the workpiece W with a laser beam LB having transparency to the workpiece W along the division line S from the back surface Wb side of the workpiece W to obtain a finished thickness of the chip. A modified layer forming step of forming a modified layer M on the back surface Wb side from a corresponding position; a back surface grinding step of grinding the back surface Wb of the workpiece W on which the modified layer M is formed and forming a finished thickness of the chip; A protection member expansion step for dividing the workpiece W into individual chips C and expanding the chip interval 7, and by curing and shrinking the adhesive material of the surface protection member 1 in the protection member heating step, Since the workpiece is formed with an undivided region in which the chip is not completely divided in the cutting step, the crack 6 generated from the altered layer M during back grinding is prevented from extending to the surface Wa of the workpiece W. No gap is generated between the chips C. Therefore, it is possible to prevent the grinding water containing the grinding waste from entering the side surface of the chip C and to prevent the grinding waste from adhering to the side surface of the chip C.

１：表面保護部材 ２：加熱部材 ３：レーザ加工装置 ３０：保持テーブル
３１：レーザ加工手段 ３２：レーザヘッド ３３：ケーシング ３４：撮像手段
４：研削装置 ４０：保持テーブル ４１：回転手段 ４２：研削手段
４３：スピンドル ４４：マウント ４５：研削ホイール ４６：研削砥石
５：拡張装置 ５０：支持テーブル ５１：フレーム載置台
５２：クランプ部 ５３：昇降手段 ５３ａ：シリンダ ５３ｂ：ピストン
６：亀裂 ７：チップ間隔 1: Surface protection member 2: Heating member 3: Laser processing device 30: Holding table 31: Laser processing means 32: Laser head 33: Casing 34: Imaging means 4: Grinding device 40: Holding table 41: Rotating means 42: Grinding means 43: Spindle 44: Mount 45: Grinding wheel 46: Grinding wheel 5: Expansion device 50: Support table 51: Frame mounting table 52: Clamping part 53: Lifting means 53a: Cylinder 53b: Piston 6: Crack 7: Tip interval

Claims (2)

表面に格子状に形成された分割予定ラインによって区画された領域に機能素子が形成された被加工物を、分割予定ラインに沿って個々のチップに分割する被加工物の加工方法であって、
該被加工物の表面の該機能素子が形成された領域を表面保護部材で覆う表面保護ステップと、
該表面保護部材の粘着材を硬化収縮させる保護部材加熱ステップと、
該被加工物の裏面側から分割予定ラインに沿って該被加工物に対して透過性を有するレーザ光線を照射し、チップの仕上がり厚さに相当する位置より裏面側に変質層を形成する変質層形成ステップと、
変質層の形成された被加工物の裏面を研削し、チップの仕上がり厚さに形成する裏面研削ステップと、
該被加工物を個々のチップに分割するとともにチップ間隔を拡張させる保護部材拡張ステップと、を含み、
保護部材加熱ステップで該表面保護部材の該粘着材を硬化収縮させることで、該裏面研削ステップでチップ分割が完全にされない未分割領域が被加工物に形成されることを特徴とする被加工物の加工方法。 A workpiece processing method for dividing a workpiece in which a functional element is formed in a region partitioned by a division schedule line formed in a lattice shape on a surface into individual chips along the division division line,
A surface protection step of covering the region where the functional element is formed on the surface of the workpiece with a surface protection member;
A protective member heating step for curing and shrinking the adhesive material of the surface protective member;
Alteration that forms a deteriorated layer on the back side from the position corresponding to the finished thickness of the chip by irradiating the workpiece with a laser beam having transparency to the work piece from the back side of the work piece along a division line. A layer forming step;
Grinding the back surface of the work piece on which the altered layer is formed, and forming a back surface grinding step to form the finished thickness of the chip;
A protection member expansion step for dividing the workpiece into individual chips and expanding a chip interval;
The workpiece is characterized in that an undivided region in which chip division is not completed in the back grinding step is formed in the workpiece by curing and shrinking the adhesive material of the surface protection member in the protection member heating step. Processing method. 前記表面保護部材は、粘着テープであることを特徴とする請求項１記載の被加工物の加工方法。   The method for processing a workpiece according to claim 1, wherein the surface protection member is an adhesive tape.
JP2018034805A 2018-02-28 2018-02-28 Processing method of work piece Active JP7075242B2 (en)

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TWI734549B (en) * 2020-07-06 2021-07-21 荌益國際有限公司 Substrate transfer method and device
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099622A (en) * 2010-11-02 2012-05-24 Panasonic Corp Manufacturing method and manufacturing apparatus of semiconductor device
JP2012109357A (en) * 2010-11-16 2012-06-07 Tokyo Seimitsu Co Ltd Cutting method and cutting device of semiconductor substrate
JP2015056446A (en) * 2013-09-10 2015-03-23 古河電気工業株式会社 Adhesive tape for protection of semiconductor wafer surface and method for processing semiconductor wafer
JP2015149444A (en) * 2014-02-07 2015-08-20 株式会社ディスコ Method for processing wafer
JP2016025188A (en) * 2014-07-18 2016-02-08 株式会社ディスコ Wafer parting method
JP2016115800A (en) * 2014-12-15 2016-06-23 株式会社ディスコ Processing method for wafer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4733934U (en) 1971-05-15 1972-12-15
JP2005223283A (en) * 2004-02-09 2005-08-18 Disco Abrasive Syst Ltd Method for dividing wafer
JP2011151070A (en) 2010-01-19 2011-08-04 Disco Abrasive Syst Ltd Processing method for wafer
JP2016119370A (en) * 2014-12-19 2016-06-30 株式会社ディスコ Wafer processing method
JP6456766B2 (en) 2015-05-08 2019-01-23 株式会社ディスコ Wafer processing method
JP6523882B2 (en) 2015-09-02 2019-06-05 株式会社ディスコ Wafer processing method
JP2017054843A (en) * 2015-09-07 2017-03-16 株式会社ディスコ Processing method for wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099622A (en) * 2010-11-02 2012-05-24 Panasonic Corp Manufacturing method and manufacturing apparatus of semiconductor device
JP2012109357A (en) * 2010-11-16 2012-06-07 Tokyo Seimitsu Co Ltd Cutting method and cutting device of semiconductor substrate
JP2015056446A (en) * 2013-09-10 2015-03-23 古河電気工業株式会社 Adhesive tape for protection of semiconductor wafer surface and method for processing semiconductor wafer
JP2015149444A (en) * 2014-02-07 2015-08-20 株式会社ディスコ Method for processing wafer
JP2016025188A (en) * 2014-07-18 2016-02-08 株式会社ディスコ Wafer parting method
JP2016115800A (en) * 2014-12-15 2016-06-23 株式会社ディスコ Processing method for wafer

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