CN110211926A - The processing method of machined object - Google Patents
The processing method of machined object Download PDFInfo
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- CN110211926A CN110211926A CN201910128396.0A CN201910128396A CN110211926A CN 110211926 A CN110211926 A CN 110211926A CN 201910128396 A CN201910128396 A CN 201910128396A CN 110211926 A CN110211926 A CN 110211926A
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- protecting component
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 230000011218 segmentation Effects 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000428 dust Substances 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 description 7
- 230000035699 permeability Effects 0.000 description 6
- 229910001651 emery Inorganic materials 0.000 description 5
- 238000003754 machining Methods 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Laser Beam Processing (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The processing method of machined object is provided, machined object is formed as into the thickness that completes, it is ensured that the grinding water comprising grindstone dust will not immerse the gap of adjacent chip chamber.The processing method of the machined object includes: front protecting step, utilizes the front (Wa) of front protecting component (1) covering machined object (W)；Guard block heating stepses make the adhesives curing shrinkage of front protecting component；Metamorphic layer forming step forms metamorphic layer (M) in the inside of machined object；The back side is ground step, is ground to the back side (Wb) of machined object, is formed as the completion thickness of chip；With guard block spread step; machined object is divided into each chip (C) and extends the interval (7) of chip; by the adhesives curing shrinkage for making front protecting component using guard block heating stepses; the undivided region of chip separation will not be carried out completely to be formed with overleaf grinding step on machined object; gap is not generated in chip chamber when being overleaf ground, grindstone dust is prevented to be attached to the side of chip.
Description
Technical field
The present invention relates to the processing methods of machined object.
Background technique
In semiconductor devices manufacturing process, on the front of the machined object of substantially circular plate shape by clathrate row
The segmentation preset lines for being referred to as spacing track of column mark off multiple regions, are formed with the electricity such as IC, LSI in the region divided
Road (function element).Also, machined object is cut off along segmentation preset lines, to be split to the region for being formed with circuit
And manufacture each chip.
As the method for cutting off machined object along segmentation preset lines, there is following laser processing: making focal point
It converges to the inside in the region to be divided and irradiates the pulse laser light that there is permeability for machined object.Swash using this
In the dividing method of light processing method, focal point is made to converge to internal from a surface side of machined object and irradiate for being processed
Object has the pulse laser light of the infrared light region of permeability, in the inside of machined object along the segmentation continuous landform of preset lines
At metamorphic layer, by grinding the segmentation preset lines of strength reduction to the back side of machined object along because forming the metamorphic layer
The stress cut can make machined object be broken and be divided into each chip (for example, referring to following patent documents 1).
Patent document 1: No. 4733934 bulletins of Japanese Patent
But gap is generated in the chip chamber divided, therefore when implementing grinding after chip separation up to having reached
When work thickness, the grinding water comprising grindstone dust can immerse to the gap of chip chamber and grindstone dust is made to be attached to chip sides.Attachment
Even if the grindstone dust in chip sides is cleaned using the wiper mechanism of grinding attachment, also it is very difficult to remove.
Summary of the invention
The present invention has been made in view of the above-described circumstances, and an object thereof is to provide the processing methods of machined object, even if will
Machined object is formed as the thickness that completes, and the grinding water comprising grindstone dust will not be immersed to the gap of adjacent chip chamber.
The present invention is the processing method of machined object, and the segmentation preset lines by clathrate formation on front are divided
Region be formed with the machined object of function element and be divided into each chip along segmentation preset lines, which is characterized in that this is added
The processing method of work object includes following step: front protecting step is covering the machined object just using front protecting component
The formation in face has the region of the function element；Guard block heating stepses harden the adhesives of the front protecting component and receive
Contracting；Metamorphic layer forming step has thoroughly the machined object along segmentation preset lines irradiation from the back side of the machined object
The laser beam for the property crossed forms metamorphic layer in the position of the position backrest surface side of the completion thickness than being equivalent to chip；Back side mill
Step is cut, the back side for the machined object for being formed with metamorphic layer is ground, is formed as the completion thickness of chip；And protection portion
The machined object is divided into each chip, and makes the space expansion of chip by part spread step, by being added using guard block
Hot step makes the adhesives curing shrinkage of the front protecting component, is ground to be formed on machined object at the back side
The undivided region of chip separation will not be carried out in step completely.It is preferred that the front protecting component is splicing tape.
The processing method of machined object of the invention is configured to comprising following step: front protecting step utilizes front
The positive region for being formed with function element of guard block covering machined object；Guard block heating stepses, make front protecting
The adhesives curing shrinkage of component；Metamorphic layer forming step, from the back side of machined object along segmentation preset lines irradiation pair
There is the laser beam of permeability in machined object, the position shape in the position backrest surface side of the completion thickness than being equivalent to chip
At metamorphic layer；The back side is ground step, is ground to the back side for the machined object for being formed with metamorphic layer, is formed as the completion of chip
Thickness；And guard block spread step, machined object is separated into each chip, and make the space expansion of chip, passed through
The adhesives curing shrinkage for making front protecting component using guard block heating stepses, to be formed on machined object
The undivided region of chip separation will not be carried out completely in back side grinding step, therefore prevent the back side from generating when being ground from metamorphic layer
Cracking extend to the front of machined object, to not generate gap in chip chamber.In this way, in accordance with the invention it is possible to preventing from wrapping
Grinding water containing grindstone dust immerses chip sides, grindstone dust can be prevented to be attached to chip sides.In above-mentioned front protecting component
In the case where being made of splicing tape, it can easily implement above-mentioned front protecting step.
Detailed description of the invention
Fig. 1 is the perspective view for showing front protecting step.
Fig. 2 is the cross-sectional view for showing guard block heating stepses.
(a) and (b) of Fig. 3 is the perspective view and cross-sectional view for showing metamorphic layer forming step.
(a) and (b) of Fig. 4 is the perspective view and cross-sectional view for showing back side grinding step.
(a) and (b) of Fig. 5 is the cross-sectional view for showing guard block spread step.
Label declaration
1: front protecting component；2: heating element；3: laser processing device；30: keeping workbench；31: laser processing is single
Member；32: laser head；33: shell；34: shooting unit；4: grinding attachment；40: keeping workbench；41: rotary unit；42: grinding
Unit；43: main shaft；44: mounting base；45: grinding emery wheel；46: grinding grinding tool；5: expanding unit；50: supporting station；51: frame carries
Set platform；52: clamping part；53: lifting unit；53a: cylinder；53b: piston；6: cracking；7: the interval of chip.
Specific embodiment
Machined object W shown in FIG. 1 has the substrate of circular plate, on the positive Wa of substrate, by clathrate shape
At each region that divides a plurality of segmentation preset lines S in be respectively formed with function element (be in the example in the figures device D).With
The back side Wb of the positive Wa of machined object W opposite side is to implement the defined machined surface processed.The material of machined object W
Matter, thickness and size are not particularly limited.Hereinafter, to the quilt that machined object W is divided into each chip along segmentation preset lines S
The processing method of machining object is illustrated.
(1) front protecting step
As shown in Figure 1, there is the region of device D using the formation that front protecting component 1 covers the positive Wa of machined object W.
Front protecting component 1 shown in present embodiment is with cementability and with the size with machined object W roughly the same diameter.Separately
Outside, front protecting component 1 is such as made of being laminated adhesives preferably on the substrate constituted by polyolefin or polyvinyl chloride
Splicing tape.Front protecting component 1 is pasted on the positive Wa of machined object W and covers entire front Wa, thus to each device D into
Row protection.Front protecting component 1 is made of splicing tape, therefore can easily implement front protecting step.Front protecting step
Implement in the band labelling machine of the positive Wa (not shown) for example by adhesive tape joining in machined object W.
(2) guard block heating stepses
As shown in Fig. 2, machined object W is placed in heating element from 1 side of front protecting component for being pasted on machined object W
Front protecting component 1 is heated on 2.Heating element 2 is for example made of infrared heater.It, will in heating element 2
Front protecting component 1 heats 1 minute or so for example at 80 DEG C, to make the adhesives curing shrinkage of front protecting component 1.
The adhesives of front protecting component 1 is hardened as a result, therefore when implementing aftermentioned back side grinding step, can reduce grinding
When stress influence and inhibit the movement of adjacent chip.Heating element 2 can also be by spraying hot wind to front protecting component 1
And the heater heated to adhesives is constituted.Guard block heating stepses can be implemented in above-mentioned band labelling machine,
It can also implement in aftermentioned laser processing device 3.
(3) metamorphic layer forming step
Then, machined object W is transported into laser processing device 3 shown in (a) to Fig. 3, is being added by laser processing
The inside of work object W forms metamorphic layer M.Laser processing device 3, which at least includes, keeps workbench 30, protects to machined object W
It holds；And laser processing unit 31, it is disposed in the upper side for keeping workbench 30.Keep workbench 30 upper surface be by
Sucking action from attraction source (not shown) and to machined object W carry out attracting holding retaining surface 30a.Keeping workbench
30 lower section is connected with mobile unit, which makes to keep workbench 30 and laser machine unit 31 to hang down with vertical direction
It is relatively moved in straight horizontal direction (X-direction and Y direction).
Laser processing unit 31 includes laser head 32, irradiates and has for the machined object W for keeping workbench 30 to be kept
There is the laser beam LB of the wavelength of permeability；And shell 33, laser head 32 is installed in front end.It is received in the inside of shell 33
Receive vibrate the oscillator of laser beam LB out and adjust laser beam LB output output adjustment device, in laser head 32
Inside is built-in with collector lens, and the laser beam LB which is used to make to vibrate from oscillator out is assembled.In addition, laser adds
Work order member 31 has position adjustment unit (not shown), which is used to adjust the laser assembled by collector lens
The position of the focal point of light LB.Shooting unit 34 is equipped in the side of shell 33.Shooting unit 34 is, for example, to be built-in with CCD
The infrared camera of imaging sensor.
When implementing metamorphic layer forming step, inhale the positive side Wa downward machined object W across front protecting component 1
Draw on the retaining surface 30a for being maintained at and keeping workbench 30.The underface that workbench 30 will be kept to be positioned at shooting unit 34, passes through
Shooting unit 34 shoots machined object W from top, the image procossings such as pattern match is carried out, thus to laser light to be irradiated
It is detected in the region (segmentation preset lines S) of line LB.
Then, decline laser head 32 to close to the direction of machined object W, as shown in (b) of Fig. 3, will be for being added
The focal point of the laser beam LB of wavelength of the work object W with permeability is positioned at the shape of the specified position of the inside of machined object W
Under state, workbench 30 will be kept to carry out processing feeding in the X-axis direction according to the processing feed speed of regulation on one side, passed through on one side
Laser head 32 is irradiated from the back side Wb lateral edge of machined object W segmentation preset lines S shown in FIG. 1, than being equivalent to chip
Completion thickness the position side backrest surface Wb position formed metamorphic layer M.Metamorphic layer M be the inside of machined object W intensity or
The changed region of physical characteristic, metamorphic layer M is as segmentation starting point when machined object W to be divided into each chip.
Whenever forming metamorphic layer M along a segmentation preset lines S irradiation laser beam LB, workbench 30 will be kept to exist
Index feed is carried out in Y direction and irradiates laser beam LB along next segmentation preset lines S.If to towards X-direction
All segmentation preset lines S complete the irradiation of laser beam LB, then are rotated by 90 ° holding workbench 30 shown in (a) of Fig. 3, make
Before this towards the segmentation preset lines S of Y direction towards X-direction.Also, repeat along all segmentation preset lines S above-mentioned
Same laser processing, forms the metamorphic layer M along segmentation preset lines S.
(4) back side is ground step
Then, grinding attachment 4 shown in (a) using Fig. 4 is ground the back side Wb of machined object W and is formed as
The completion thickness of chip.Grinding attachment 4, which includes, keeps workbench 40, keeps to machined object W；Rotary unit 41,
Make that workbench 40 is kept to rotate；And grinding unit 42, grinding is implemented to the machined object W for keeping workbench 40 to be kept.
The upper surface for keeping workbench 40 is to be carried out attraction guarantor to machined object W by the sucking action from attraction source (not shown)
The retaining surface 40a held.
Grinding unit 42 includes main shaft 43, the axle center with the vertical direction vertical with retaining surface 40a；It is ground emery wheel
45, the lower end of main shaft 43 is installed on by mounting base 44；And grinding grinding tool 46, annularly adhere to grinding emery wheel 45
Lower part.It is connected with lifting unit (not shown) in grinding unit 42, can make on one side to be ground the rotation of emery wheel 45 by lifting unit
Turn the integral elevating for making grinding unit 42 on one side.
In the case where being ground to machined object W, as shown in (b) of Fig. 4, the retaining surface for keeping workbench 40 is utilized
40a keeps 1 side of front protecting component for the positive Wa for being pasted on machined object W, makes the back side Wb of machined object W upward
Expose, makes that workbench 40 is kept for example to rotate to the direction arrow A.Then, grinding unit 42 make be ground emery wheel 45 for example on one side to
The direction arrow A rotates to be declined according to the grinding and feeding speed of regulation on one side, using the grinding grinding tool 46 of rotation to machined object W's
Back side Wb is pressed and is carried out grinding until reaching the completion thickness of chip.In the grinding of machined object W, do not carry out
The contact surface of diagram but grinding grinding tool 46 and machined object W to rotation provides grinding water.
It is overleaf ground in step, due to making the bonding of front protecting component 1 using above-mentioned guard block heating stepses
Material hardening is shunk, even if carrying out grinding and making machined object is W-shaped to become completion thickness to make to answer masterpiece when grinding
For front protecting component 1, front protecting component 1 will not be bent, therefore inhibit the movement of chip, the shape on machined object W
At there is the undivided region that will not carry out chip separation completely.In the undivided region, it will not be generated in adjacent chip chamber
Gap, the grinding water for being mixed into grindstone dust can not be immersed to gap.But when machined object W reaches completion thickness, in quilt
Also the region that be divided into chip using metamorphic layer M as starting point is locally generated on machining object W, but shown in the present embodiment
Back side grinding step in, the adhesives of front protecting component 1 is hardened, therefore machined object W can be made to keep whole on one side
For the form of circular plate, make machined object is W-shaped to become completion thickness on one side.
(5) guard block spread step
Machined object W is divided into each chip C as shown in (a) of Fig. 5, such as using expanding unit 5, and makes chip
Space expansion.Expanding unit 5 includes supporting station 50, supports machined object W from below；Frame mounting table 51, is disposed in
The peripheral side of supporting station 50 in center there is the frame F of opening to load；Clamping part 52 is loaded to frame is placed in
The frame F of platform 51 is clamped；Lifting unit 53 links with the lower part of frame mounting table 51, makes frame mounting table 51 upper
Lower section is gone up and down upwards.Lifting unit 53 includes: cylinder 53a；And the piston 53b of lifting driving is carried out by cylinder 53a, pass through
Piston 53b is moved up and down, and frame mounting table 51 can be made to go up and down.
When transporting machined object W to expanding unit 5, the front and back of machined object W is inverted, frame is being pasted on
The back side Wb of frame F and the band exposed from opening stickup machined object W on T, and by front protecting component 1 shown in Fig. 4 from quilt
The positive Wa of machining object W is removed.In this way, making frame F by band T and machined object is W-shaped is integrally formed.Implement back side grinding
The machined object W of step is not divided completely, but between adjacent chip C the metamorphic layer M shown in (a) of Fig. 4 along quilt
The thickness direction of machining object W generates cracking 6.The un-extended positive Wa to machined object W of the cracking 6.
For machined object W, the back side side Wb of machined object W is placed in supporting station 50 across with T, and by frame F
It is placed in frame mounting table 51.Press by upper surface of the clamping part 52 to frame F and is fixed into and can not move.Such as Fig. 5
(b) shown in, piston 53b move downwards and make frame mounting table 51 decline, make frame mounting table 51 relative to supporting station 50
Relatively decline.As a result, when the radial extension of band T, the external force of radiation direction, the edge machined object W are assigned to machined object W
Cracking 6 and be divided into each chip C.Since cracking 6 enters between adjacent chip C, by being extended to band T
And it can easily be done complete parttion of the machined object W to chip C.Band T is extended according to the propagation of regulation, thus
Extend the interval 7 of the chip between adjacent chip C.If also, being formed between chip between all adjacent chip C
Every 7, then guard block spread step is completed.It moves out unit etc. by (not shown) the obtained chip C of segmentation is picked up
It transports to subsequent processing.
As described above, the processing method of machined object of the invention is configured to comprising following step: front protecting step,
There is the region of device D using the formation that front protecting component 1 covers the positive Wa of machined object W；Guard block heating stepses, make
The adhesives curing shrinkage of front protecting component 1；Metamorphic layer forming step, from the segmentation of the back side Wb lateral edge of machined object W
Preset lines S irradiation has machined object W the laser beam LB of permeability, in the position of the completion thickness than being equivalent to chip
The position of the more side backrest surface Wb forms metamorphic layer M；The back side is ground step, the back side Wb to the machined object W for being formed with metamorphic layer M
It is ground, is formed as the completion thickness of chip；And guard block spread step, machined object W is divided into each chip
C, and the interval 7 of chip is extended, by hardening the adhesives of front protecting component 1 using guard block heating stepses
It shrinks, so that the undivided region for being overleaf ground in step and will not carrying out chip separation completely is formed on machined object,
Therefore prevent the back side from extending to the positive Wa of machined object W when being ground from the cracking 6 that metamorphic layer M is generated, thus not between chip C
Generate gap.Therefore, it can prevent the grinding water comprising grindstone dust from immersing to the side of chip C, can prevent grindstone dust from adhering to
In the side of chip C.
Claims (2)
1. a kind of processing method of machined object, the region that the segmentation preset lines by clathrate formation on front are divided
The machined object for being inside formed with function element is divided into each chip along segmentation preset lines, which is characterized in that
The processing method of the machined object includes following step:
Front protecting step covers the positive area for being formed with the function element of the machined object using front protecting component
Domain；
Guard block heating stepses make the adhesives curing shrinkage of the front protecting component；
Metamorphic layer forming step has thoroughly the machined object along segmentation preset lines irradiation from the back side of the machined object
The laser beam for the property crossed forms metamorphic layer in the position of the position backrest surface side of the completion thickness than being equivalent to chip；
The back side is ground step, is ground to the back side for the machined object for being formed with metamorphic layer, is formed as the completion thickness of chip；
And
The machined object is divided into each chip, and makes the space expansion of chip by guard block spread step,
By making the adhesives curing shrinkage of the front protecting component using guard block heating stepses, thus being processed
The undivided region that will not carry out chip separation completely in back side grinding step is formed on object.
2. the processing method of machined object according to claim 1, which is characterized in that
The front protecting component is splicing tape.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-034805 | 2018-02-28 | ||
| JP2018034805A JP7075242B2 (en) | 2018-02-28 | 2018-02-28 | Processing method of work piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110211926A true CN110211926A (en) | 2019-09-06 |
| CN110211926B CN110211926B (en) | 2024-02-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910128396.0A Active CN110211926B (en) | 2018-02-28 | 2019-02-21 | Method for processing object to be processed |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7075242B2 (en) |
| KR (1) | KR102586315B1 (en) |
| CN (1) | CN110211926B (en) |
| TW (1) | TWI787471B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI734549B (en) * | 2020-07-06 | 2021-07-21 | 荌益國際有限公司 | Substrate transfer method and device |
| CN115319563B (en) * | 2022-08-30 | 2024-01-19 | 上海积塔半导体有限公司 | Fixing device and chip polishing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005223283A (en) * | 2004-02-09 | 2005-08-18 | Disco Abrasive Syst Ltd | Method for dividing wafer |
| JP2012099622A (en) * | 2010-11-02 | 2012-05-24 | Panasonic Corp | Manufacturing method and manufacturing apparatus of semiconductor device |
| JP2012109357A (en) * | 2010-11-16 | 2012-06-07 | Tokyo Seimitsu Co Ltd | Cutting method and cutting device of semiconductor substrate |
| CN105720008A (en) * | 2014-12-19 | 2016-06-29 | 株式会社迪思科 | Wafer Processing Method |
| CN106505035A (en) * | 2015-09-07 | 2017-03-15 | 株式会社迪思科 | The processing method of chip |
Family Cites Families (8)
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| JP2015056446A (en) * | 2013-09-10 | 2015-03-23 | 古河電気工業株式会社 | Adhesive tape for protection of semiconductor wafer surface and method for processing semiconductor wafer |
| JP6257365B2 (en) | 2014-02-07 | 2018-01-10 | 株式会社ディスコ | Wafer processing method |
| JP6295154B2 (en) * | 2014-07-18 | 2018-03-14 | 株式会社ディスコ | Wafer dividing method |
| JP2016115800A (en) | 2014-12-15 | 2016-06-23 | 株式会社ディスコ | Processing method for wafer |
| JP6456766B2 (en) | 2015-05-08 | 2019-01-23 | 株式会社ディスコ | Wafer processing method |
| JP6523882B2 (en) | 2015-09-02 | 2019-06-05 | 株式会社ディスコ | Wafer processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005223283A (en) * | 2004-02-09 | 2005-08-18 | Disco Abrasive Syst Ltd | Method for dividing wafer |
| JP2012099622A (en) * | 2010-11-02 | 2012-05-24 | Panasonic Corp | Manufacturing method and manufacturing apparatus of semiconductor device |
| JP2012109357A (en) * | 2010-11-16 | 2012-06-07 | Tokyo Seimitsu Co Ltd | Cutting method and cutting device of semiconductor substrate |
| CN105720008A (en) * | 2014-12-19 | 2016-06-29 | 株式会社迪思科 | Wafer Processing Method |
| CN106505035A (en) * | 2015-09-07 | 2017-03-15 | 株式会社迪思科 | The processing method of chip |
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| KR20190103942A (en) | 2019-09-05 |
| CN110211926B (en) | 2024-02-09 |
| TWI787471B (en) | 2022-12-21 |
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