JP2019096834A - Resistor - Google Patents

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JP2019096834A
JP2019096834A JP2017227293A JP2017227293A JP2019096834A JP 2019096834 A JP2019096834 A JP 2019096834A JP 2017227293 A JP2017227293 A JP 2017227293A JP 2017227293 A JP2017227293 A JP 2017227293A JP 2019096834 A JP2019096834 A JP 2019096834A
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resistor
electrode
protective film
substrate
film
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JP7296565B2 (en
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孝彦 伊澤
Takahiko Izawa
孝彦 伊澤
弘志 齋藤
Hiroshi Saito
弘志 齋藤
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Panasonic Intellectual Property Management Co Ltd
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Abstract

To provide a resistor capable of reducing corrosion of a resistive element.SOLUTION: A resistor 1 includes a substrate 11, a resistive element 12, a first electrode 14, a second protection film 16, and a second electrode 17. The resistive element 12 is positioned on the substrate 11. The first electrode 14 is positioned on the resistive element 12. The second protection film 16 is positioned on the resistive element 12. The second electrode 17 is positioned on the first electrode 14 including a border crossing portion 171 which crosses a border b2 between the first electrode 14 and the second protection film 16 when viewed from a thickness direction of the substrate 11.SELECTED DRAWING: Figure 7

Description

本開示は、一般に抵抗器に関し、より詳細には、電子機器に使用されるチップ抵抗器に関する。   The present disclosure relates generally to resistors and, more particularly, to chip resistors used in electronic devices.

特許文献１には、電子機器に使用されるチップ抵抗器が記載されている。特許文献１に記載のチップ抵抗器は、アルミナ基板と、アルミナ基板の表面全体を覆う平坦化層と、平坦化層の表面上に設けられた抵抗体と、抵抗体の両端部に接続する一対の表電極と、抵抗体を被覆する絶縁性の保護層と、を備える。特許文献１に記載のチップ抵抗器では、保護層は、一対の表電極で挟まれた部分の抵抗体を覆うように、抵抗体の表面にスクリーン印刷される。   Patent Document 1 describes a chip resistor used in an electronic device. The chip resistor described in Patent Document 1 includes an alumina substrate, a planarization layer covering the entire surface of the alumina substrate, a resistor provided on the surface of the planarization layer, and a pair connected to both ends of the resistor. And a protective protective layer covering the resistor. In the chip resistor described in Patent Document 1, the protective layer is screen-printed on the surface of the resistor so as to cover the resistor in a portion sandwiched by the pair of front electrodes.

特開２０１７−１３５２３４号公報JP 2017-135234 A

ところで、特許文献１に記載のチップ抵抗器（抵抗器）では、表電極（第１電極）と保護層（保護膜）との間から水分が浸入し、この水分によって抵抗体が腐食する可能性があった。   By the way, in the chip resistor (resistor) described in Patent Document 1, moisture may intrude from between the front electrode (first electrode) and the protective layer (protective film), and the resistor may be corroded by the moisture. was there.

本開示は上記問題点に鑑みて為されており、抵抗体の腐食を低減することができる抵抗器を提供することを目的とする。   The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a resistor capable of reducing corrosion of the resistor.

本開示の一態様に係る抵抗器は、基板と、抵抗体と、第１電極と、保護膜と、第２電極と、を備える。前記抵抗体は、前記基板上に位置する。前記第１電極は、前記抵抗体上に位置する。前記保護膜は、前記抵抗体上に位置する。前記第２電極は、前記基板の厚み方向から見たときの前記第１電極と前記保護膜との境界を跨ぐ境界跨ぎ部を含むように前記第１電極上に位置する。   A resistor according to an aspect of the present disclosure includes a substrate, a resistor, a first electrode, a protective film, and a second electrode. The resistor is located on the substrate. The first electrode is located on the resistor. The protective film is located on the resistor. The second electrode is positioned on the first electrode so as to include a boundary crossing portion across the boundary between the first electrode and the protective film when viewed in the thickness direction of the substrate.

本開示によれば、抵抗体の腐食を低減することができる、という効果がある。   According to the present disclosure, there is an effect that corrosion of the resistor can be reduced.

図１Ａは、実施形態１に係る抵抗器の平面図である。図１Ｂは、図１ＡのＡ−Ａ断面図である。1A is a plan view of a resistor according to Embodiment 1. FIG. FIG. 1B is a cross-sectional view taken along line AA of FIG. 1A. 図２Ａ〜図２Ｃは、図１ＢのＢ部拡大図であって、静電気放電によって抵抗値が変化する場合のメカニズムを説明する説明図である。FIGS. 2A to 2C are enlarged views of a portion B of FIG. 1B, and are explanatory diagrams for explaining a mechanism in the case where the resistance value changes due to electrostatic discharge. 図３は、静電気放電による印加電圧と抵抗体の抵抗値変化率との関係を示すグラフである。FIG. 3 is a graph showing the relationship between the applied voltage due to electrostatic discharge and the rate of change in resistance value of the resistor. 図４Ａは、同上の抵抗器の一部省略した平面図である。図４Ｂは、図４ＡのＡ−Ａ断面図である。FIG. 4A is a partially omitted plan view of the above resistor. FIG. 4B is a cross-sectional view taken along line A-A of FIG. 4A. 図５Ａは、同上の抵抗器の一部省略した平面図である。図５Ｂは、図５ＡのＡ−Ａ断面図である。FIG. 5A is a partially omitted plan view of the above resistor. FIG. 5B is a cross-sectional view taken along the line AA of FIG. 5A. 図６Ａは、同上の抵抗器の一部省略した平面図である。図６Ｂは、図６ＡのＡ−Ａ断面図である。FIG. 6A is a partially omitted plan view of the above resistor. FIG. 6B is a cross-sectional view taken along line AA of FIG. 6A. 図７Ａは、同上の抵抗器の一部省略した平面図である。図７Ｂは、図７ＡのＡ−Ａ断面図である。FIG. 7A is a partially omitted plan view of the above resistor. FIG. 7B is a cross-sectional view taken along line A-A of FIG. 7A. 図８は、図１ＢのＣ部拡大図である。FIG. 8 is an enlarged view of a portion C of FIG. 1B. 図９は、第１保護膜の膜厚と抵抗体の抵抗値変化率との関係を示すグラフである。FIG. 9 is a graph showing the relationship between the film thickness of the first protective film and the rate of change in resistance value of the resistor. 図１０は、第１電極に対する第２保護膜の重なり量と抵抗体の抵抗値変化率との関係を示すグラフである。FIG. 10 is a graph showing the relationship between the amount of overlap of the second protective film with the first electrode and the rate of change in resistance value of the resistor. 図１１は、第２保護膜に対する第２電極の重なり量と抵抗体の抵抗値変化率との関係を示すグラフである。FIG. 11 is a graph showing the relationship between the amount of overlap of the second electrode with the second protective film and the rate of change in resistance value of the resistor. 図１２は、抵抗体を構成するタンタル及び窒素の構成比と抵抗体の比抵抗との関係を示すグラフである。FIG. 12 is a graph showing the relationship between the composition ratio of tantalum and nitrogen constituting the resistor and the specific resistance of the resistor. 図１３は、実施形態１の変形例に係る抵抗器の断面図である。FIG. 13 is a cross-sectional view of a resistor according to a modification of the first embodiment. 図１４Ａは、実施形態２に係る抵抗器の断面図である。図１４Ｂは、実施形態２の変形例に係る抵抗器の断面図である。14A is a cross-sectional view of a resistor according to Embodiment 2. FIG. FIG. 14B is a cross-sectional view of a resistor according to a variation of Embodiment 2.

（実施形態１）
（１）抵抗器の概要
本実施形態に係る抵抗器１の概要について、図１Ａ及び図１Ｂを参照して説明する。なお、図面中の各部の寸法については、抵抗器１の構成が分かりやすいようにしており、必ずしも実際の抵抗器１と一致していない。 (Embodiment 1)
(1) Outline of Resistor An outline of the resistor 1 according to the present embodiment will be described with reference to FIGS. 1A and 1B. In addition, about the dimension of each part in drawing, the structure of the resistor 1 is made to be intelligible, and it does not necessarily correspond with the actual resistor 1. FIG.

本実施形態に係る抵抗器１は、例えば、表面実装機（マウンタ）を用いて、プリント基板の表面（実装面）に実装される表面実装（ＳＭＴ：Surface Mount Technology）用のチップ抵抗器である。本実施形態では、抵抗器１が薄膜チップ抵抗器である場合を例として説明するが、抵抗器１は、薄膜チップ抵抗器に限らず、厚膜チップ抵抗器であってもよい。また、本実施形態では、抵抗器１が表面実装用の抵抗器である場合を例として説明するが、抵抗器１は、表面実装用の抵抗器に限らず、スルーホール実装（ＴＨＴ：Through-hole Technology）用の抵抗器であってもよい。   The resistor 1 according to the present embodiment is, for example, a chip resistor for surface mounting (SMT: Surface Mount Technology) mounted on the surface (mounting surface) of a printed circuit board using a surface mounting machine (mounter). . In the present embodiment, the case where the resistor 1 is a thin film chip resistor will be described as an example, but the resistor 1 is not limited to a thin film chip resistor, and may be a thick film chip resistor. Further, in the present embodiment, the case where the resistor 1 is a surface mounting resistor will be described as an example, but the resistor 1 is not limited to a surface mounting resistor, and through-hole mounting (THT: Through- It may be a resistor for hole technology).

本実施形態に係る抵抗器１は、図１Ａ及び図１Ｂに示すように、基板１１と、抵抗体１２と、第１電極１４と、第２保護膜（保護膜）１６と、第２電極１７と、を備える。抵抗体１２は、基板１１上に位置する。第１電極１４は、抵抗体１２上に位置する。第２保護膜１６は、抵抗体１２上に位置する。第２電極１７は、基板１１の厚み方向から見て第１電極１４と第２保護膜１６との境界ｂ２を跨ぐ境界跨ぎ部１７１を含むように第１電極１４上に位置する。すなわち、本実施形態に係る抵抗器１では、抵抗体１２、第１電極１４、第２保護膜１６及び第２電極１７がこの順番で基板１１上に積層（形成）されている。   As shown in FIGS. 1A and 1B, the resistor 1 according to this embodiment includes a substrate 11, a resistor 12, a first electrode 14, a second protective film (protective film) 16, and a second electrode 17 And. The resistor 12 is located on the substrate 11. The first electrode 14 is located on the resistor 12. The second protective film 16 is located on the resistor 12. The second electrode 17 is positioned on the first electrode 14 so as to include a boundary crossing portion 171 that crosses the boundary b 2 between the first electrode 14 and the second protective film 16 when viewed from the thickness direction of the substrate 11. That is, in the resistor 1 according to the present embodiment, the resistor 12, the first electrode 14, the second protective film 16 and the second electrode 17 are stacked (formed) on the substrate 11 in this order.

このように、第１電極１４と第２保護膜１６との境界ｂ２が第２電極１７で覆われているので、第２電極１７で覆われていない場合と比較して、水分が内部に浸入しにくい。その結果、上記水分による抵抗体１２の腐食を低減することができ、抵抗器１の抵抗値が低下しにくいという利点がある。   Thus, since the boundary b2 between the first electrode 14 and the second protective film 16 is covered by the second electrode 17, moisture intrudes inside as compared to the case where the second electrode 17 does not cover it. It is difficult to do. As a result, the corrosion of the resistor 12 due to the moisture can be reduced, and there is an advantage that the resistance value of the resistor 1 does not easily decrease.

（２）抵抗器の構成
本実施形態に係る抵抗器１の構成について、図１Ａ及び図１Ｂを参照して説明する。以下の説明では、図面に示すように、抵抗器１の厚み方向を前後方向、抵抗器１の長手方向を左右方向、抵抗器１の短手方向を上下方向と規定するが、これらの方向は抵抗器１の使用方向を規定する趣旨ではない。また、図面中の「前」、「後」、「左」、「右」、「上」、「下」を示す矢印は説明のために表記しているに過ぎず、実体を伴わない。 (2) Configuration of Resistor The configuration of the resistor 1 according to the present embodiment will be described with reference to FIGS. 1A and 1B. In the following description, as shown in the drawings, the thickness direction of the resistor 1 is defined as the longitudinal direction, the longitudinal direction of the resistor 1 as the lateral direction, and the short direction of the resistor 1 as the vertical direction. It is not the meaning which prescribes the use direction of resistor 1. In addition, arrows indicating “front”, “rear”, “left”, “right”, “up”, and “down” in the drawings are merely shown for the purpose of explanation and do not accompany an entity.

本実施形態に係る抵抗器１は、図１Ａ及び図１Ｂに示すように、基板１１と、抵抗体１２と、一対の接着層１３と、一対の第１電極１４と、第１保護膜１５と、第２保護膜（保護膜）１６と、一対の第２電極１７と、を備えている。また、本実施形態に係る抵抗器１は、一対の第３電極１８と、一対の第４電極１９と、一対の第５電極２０と、一対の第６電極２１と、を備えている。   As shown in FIGS. 1A and 1B, the resistor 1 according to this embodiment includes a substrate 11, a resistor 12, a pair of adhesive layers 13, a pair of first electrodes 14, and a first protective film 15. And a second protective film (protective film) 16 and a pair of second electrodes 17. Further, the resistor 1 according to the present embodiment includes a pair of third electrodes 18, a pair of fourth electrodes 19, a pair of fifth electrodes 20, and a pair of sixth electrodes 21.

基板１１は、例えば、Ａｌ２Ｏ３（アルミナ）を含有するアルミナ基板である。基板１１は、図１Ａに示すように、前方から見たとき（平面視）の形状が左右方向に長い矩形状である。基板１１は、例えば、その厚みが０．１〔ｍｍ〕〜０．６〔ｍｍ〕である。 The substrate 11 is, for example, an alumina substrate containing Al 2 O 3 (alumina). As shown in FIG. 1A, the substrate 11 has a rectangular shape that is long in the left-right direction when viewed from the front (in plan view). The substrate 11 has, for example, a thickness of 0.1 mm to 0.6 mm.

抵抗体１２は、例えばＮｉＣｒ系合金からなり、基板１１上に位置している。抵抗体１２は、例えばスパッタリングによって基板１１の前面全体に形成（成膜）される。そして、基板１１上に形成された抵抗体１２に対して、例えばフォトリソグラフィ及びエッチングを行うことによって、所望の抵抗値となるように抵抗体１２がパターニングされる。抵抗体１２の膜厚は、例えば、１０〔ｎｍ〕〜１０００〔ｎｍ〕程度である。   The resistor 12 is made of, for example, a NiCr-based alloy, and is located on the substrate 11. The resistor 12 is formed (deposited) on the entire front surface of the substrate 11 by sputtering, for example. Then, the resistor 12 is patterned to have a desired resistance value by performing, for example, photolithography and etching on the resistor 12 formed on the substrate 11. The film thickness of the resistor 12 is, for example, about 10 nm to 1000 nm.

一対の接着層１３は、例えばタンタル（Ｔａ）からなり、抵抗体１２上で、かつ左右方向の両端部にそれぞれ位置している。一対の接着層１３は、例えば、スパッタリングにて抵抗体１２の前面全体に接着層の膜を形成した後、フォトリソグラフィ及びエッチングにて左右方向の中央部分の膜を除去することで、左右方向の両端部にそれぞれ形成（成膜）される。一対の接着層１３の各々の大きさは、第１電極１４と略同じ大きさである。接着層１３の材料は、タンタル（Ｔａ）に限らず、ＺｎＯ、ＺｎＮ、Ｒｈ、Ｔｉ等のいずれかであってもよい。   The pair of adhesive layers 13 are made of, for example, tantalum (Ta), and are located on the resistor 12 and at both end portions in the left-right direction. For example, after forming a film of the adhesive layer on the entire front surface of the resistor 12 by sputtering, the pair of adhesive layers 13 is formed by removing the film in the central portion in the horizontal direction by photolithography and etching. The film is formed (film-formed) on both ends. The size of each of the pair of adhesive layers 13 is substantially the same size as the first electrode 14. The material of the adhesive layer 13 is not limited to tantalum (Ta), and may be any of ZnO, ZnN, Rh, Ti, and the like.

一対の第１電極（上面電極）１４は、例えばＣｕ系合金、Ａｇ系合金、Ａｕ系合金からなり、一対の接着層１３上に位置している。言い換えると、一対の第１電極１４は、一対の接着層１３を介して抵抗体１２上に位置している。一対の第１電極１４は、例えば、スパッタリングにて抵抗体１２及び一対の接着層１３の前面全体に電極の膜を形成した後、フォトリソグラフィ及びエッチングにて左右方向の中央部分の膜を除去することで、左右方向の両端部にそれぞれ形成（成膜）される。一対の第１電極１４の各々の形状は、本実施形態では矩形状（図４Ａ参照）であるが、円形状、三角形状等であってもよい。なお、第１電極１４については、「（３．１）第１電極」の欄で詳細に説明する。   The pair of first electrodes (upper surface electrodes) 14 is made of, for example, a Cu-based alloy, an Ag-based alloy, or an Au-based alloy, and is located on the pair of adhesive layers 13. In other words, the pair of first electrodes 14 is located on the resistor 12 via the pair of adhesive layers 13. For example, after forming a film of an electrode on the entire front surface of the resistor 12 and the pair of adhesive layers 13 by sputtering, the pair of first electrodes 14 removes the film in the central portion in the left-right direction by photolithography and etching. Thus, the film is formed (deposited) on both end portions in the left-right direction. Each of the pair of first electrodes 14 has a rectangular shape (see FIG. 4A) in the present embodiment, but may have a circular shape, a triangular shape, or the like. The first electrode 14 will be described in detail in the section “(3.1) First electrode”.

ここで、本実施形態では、上述のように、抵抗体１２と第１電極１４との間に接着層１３が設けられており、この接着層１３によって抵抗体１２と第１電極１４との密着性を高めることができる。さらに、本実施形態では、抵抗体１２がＮｉＣｒ系合金からなり、第１電極１４がＣｕ系合金からなり、接着層１３がタンタルからなる。つまり、接着層１３の活性化エネルギは、抵抗体１２及び第１電極１４の活性化エネルギよりも小さい。これにより、抵抗体１２と第１電極１４との密着性を更に高めることができる。また、例えば抵抗体１２と第１電極１４とを拡散接合にて接合する場合には、加圧及び加熱が必要であるため、抵抗体１２と第１電極１４との少なくとも一方に歪みが生じる可能性がある。これに対して、抵抗体１２と第１電極１４とを接着層１３を介して接合する場合には、常温接合が可能であることから、抵抗体１２及び第１電極１４に歪みが生じにくいという利点がある。   Here, in the present embodiment, as described above, the adhesive layer 13 is provided between the resistor 12 and the first electrode 14, and adhesion between the resistor 12 and the first electrode 14 is made by the adhesive layer 13. Can be enhanced. Furthermore, in the present embodiment, the resistor 12 is made of a NiCr-based alloy, the first electrode 14 is made of a Cu-based alloy, and the adhesive layer 13 is made of tantalum. That is, the activation energy of the adhesive layer 13 is smaller than the activation energy of the resistor 12 and the first electrode 14. Thereby, the adhesion between the resistor 12 and the first electrode 14 can be further enhanced. In addition, for example, in the case of bonding the resistor 12 and the first electrode 14 by diffusion bonding, since pressurization and heating are required, distortion may occur in at least one of the resistor 12 and the first electrode 14 There is sex. On the other hand, when the resistor 12 and the first electrode 14 are joined via the adhesive layer 13, normal temperature bonding is possible, so it is difficult to cause distortion in the resistor 12 and the first electrode 14. There is an advantage.

第１保護膜（無機保護膜）１５は、抵抗体１２を保護するための膜である。第１保護膜１５は、例えば、ＴｉＯｘ、ＴａＯｘ、ＡｌＯｘ、ＳｉＯｘ、ＺｒＯｘ、ＴｉＮｘ、ＴａＮｘ、ＡｌＮｘ、ＳｉＮｘ、ＺｒＮｘ等の組成式からなる金属酸化物、金属窒化物からなり、抵抗体１２上に位置している。言い換えると、第１保護膜１５は、金属酸化物と金属窒化物との少なくとも一方からなるのが好ましい。この構成によれば、第１保護膜１５が腐食しにくいという利点がある。第１保護膜１５は、例えば、スパッタリングにて抵抗体１２及び一対の第１電極１４の前面全体に保護膜を形成した後、フォトリソグラフィ及びエッチングにて左右方向の両端部の保護膜を除去することで、形成（成膜）される。第１保護膜１５の形状は、本実施形態では左右方向に長い矩形状であるが、抵抗体１２の形状に合わせて任意の形状が可能である。なお、第１保護膜１５については、「（３．２）第１保護膜」の欄で詳細に説明する。   The first protective film (inorganic protective film) 15 is a film for protecting the resistor 12. The first protective film 15 is made of, for example, a metal oxide or metal nitride having a composition formula such as TiOx, TaOx, AlOx, SiOx, ZrOx, TiNx, TaNx, AlNx, SiNx, ZrNx, etc. doing. In other words, the first protective film 15 is preferably made of at least one of metal oxide and metal nitride. According to this configuration, there is an advantage that the first protective film 15 is resistant to corrosion. The first protective film 15 forms a protective film on the entire front surface of the resistor 12 and the pair of first electrodes 14 by sputtering, for example, and then removes the protective films of both end portions in the left-right direction by photolithography and etching. Is formed (film formation). The shape of the first protective film 15 is a rectangular shape that is long in the left-right direction in the present embodiment, but any shape may be adopted in accordance with the shape of the resistor 12. The first protective film 15 will be described in detail in the section “(3.2) First protective film”.

第２保護膜（樹脂保護膜）１６は、例えばエポキシ樹脂からなり、第１保護膜１５上に位置している。第２保護膜１６は、例えば、スクリーン印刷にてエポキシ樹脂を塗布した後、紫外線を照射してエポキシ樹脂を硬化させることで形成される。第２保護膜１６の形状は、本実施形態では左右方向に長い矩形状であるが、抵抗体１２の形状に合わせて任意の形状が可能である。なお、第２保護膜１６については、「（３．３）第２保護膜」の欄で詳細に説明する。   The second protective film (resin protective film) 16 is made of, for example, an epoxy resin, and is located on the first protective film 15. The second protective film 16 is formed, for example, by applying an epoxy resin by screen printing and then irradiating ultraviolet light to cure the epoxy resin. The shape of the second protective film 16 is a rectangular shape that is long in the left-right direction in the present embodiment, but any shape is possible in accordance with the shape of the resistor 12. The second protective film 16 will be described in detail in the section “(3.3) Second protective film”.

一対の第２電極（再上面電極）１７は、例えばＣｕＮｉからなり、一対の第１電極１４上にそれぞれ位置している。一対の第２電極１７は、例えば、スパッタリングにて一対の第１電極１４及び第２保護膜１６の前面全体に電極の膜を形成した後、フォトリソグラフィ及びエッチングにて中央部分（第２保護膜１６と対向する部分）の膜を除去することで、形成（成膜）される。第２電極１７の材料は、ＣｕＮｉに限らず、Ｃｕ系合金であれば他の化合物であってもよい。なお、第２電極１７については、「（３．４）第２電極」の欄で詳細に説明する。   The pair of second electrodes (re-upper surface electrode) 17 is made of, for example, CuNi, and located on the pair of first electrodes 14 respectively. For example, after forming a film of an electrode on the entire front surface of the pair of first electrodes 14 and the second protective film 16 by sputtering, the pair of second electrodes 17 is formed in the center portion (second protective film by photolithography and etching). It is formed (film formation) by removing the film of the part facing 16). The material of the second electrode 17 is not limited to CuNi, and may be another compound as long as it is a Cu-based alloy. The second electrode 17 will be described in detail in the section “(3.4) Second electrode”.

一対の第３電極（裏面電極）１８は、例えば、導電物として銀（Ａｇ）を含有させたエポキシ樹脂からなる。一対の第３電極１８は、例えば、スクリーン印刷にて基板１１の後面にエポキシ樹脂を塗布した後、紫外線を照射してエポキシ樹脂を硬化させることで、左右方向の両端部にそれぞれ形成される。一対の第３電極１８は、一対の第１電極１４及び一対の第２電極１７と一対一に対応している。   The pair of third electrodes (back electrode) 18 is made of, for example, an epoxy resin containing silver (Ag) as a conductive material. The pair of third electrodes 18 is formed, for example, by coating an epoxy resin on the rear surface of the substrate 11 by screen printing, and then irradiating ultraviolet light to cure the epoxy resin, thereby forming both ends in the lateral direction. The pair of third electrodes 18 correspond to the pair of first electrodes 14 and the pair of second electrodes 17 in a one-to-one manner.

一対の第４電極（端面電極）１９は、例えばＣｕＮｉからなり、基板１１の長手方向（左右方向）の両端部にそれぞれ位置している。一対の第４電極１９は、例えば、スパッタリングにて、基板１１の長手方向の両端面にそれぞれ形成（成膜）される。一対の第４電極１９の各々は、前後方向（基板１１の厚み方向）に並ぶ第１電極１４と第２電極１７と第３電極１８とを電気的に接続する。第４電極１９の材料は、ＣｕＮｉに限らず、Ｃｕ系合金であれば他の化合物であってもよい。   The pair of fourth electrodes (end face electrodes) 19 are made of, for example, CuNi, and are respectively located at both end portions in the longitudinal direction (left and right direction) of the substrate 11. The pair of fourth electrodes 19 are formed (deposited) on both end faces in the longitudinal direction of the substrate 11 by sputtering, for example. Each of the pair of fourth electrodes 19 electrically connects the first electrode 14, the second electrode 17, and the third electrode 18 arranged in the front-rear direction (the thickness direction of the substrate 11). The material of the fourth electrode 19 is not limited to CuNi, but may be another compound as long as it is a Cu-based alloy.

一対の第５電極（中間電極）２０は、例えば、ニッケルめっきからなる。一対の第５電極２０の各々は、基板１１の長手方向（左右方向）の一端部（左端部又は右端部）において、第２保護膜１６の一部、第２電極１７、第３電極１８及び第４電極１９を覆っている。   The pair of fifth electrodes (intermediate electrodes) 20 is made of, for example, nickel plating. Each of the pair of fifth electrodes 20 is a part of the second protective film 16, the second electrode 17, the third electrode 18, and the one end (left end or right end) of the substrate 11 in the longitudinal direction (left and right direction). It covers the fourth electrode 19.

一対の第６電極（外部電極）２１は、例えば、スズめっきからなる。一対の第６電極２１の各々は、基板１１の長手方向（左右方向）の一端部（左端部又は右端部）において、第５電極２０を覆っている。   The pair of sixth electrodes (external electrodes) 21 are made of, for example, tin plating. Each of the pair of sixth electrodes 21 covers the fifth electrode 20 at one end (left end or right end) of the substrate 11 in the longitudinal direction (left and right direction).

（３）各部の詳細
以下、第１電極１４、第１保護膜１５、第２保護膜１６及び第２電極１７の詳細について、図２Ａ〜図１１を参照して説明する。 (3) Details of Each Part Hereinafter, the details of the first electrode 14, the first protective film 15, the second protective film 16, and the second electrode 17 will be described with reference to FIGS. 2A to 11.

（３．１）第１電極
図２Ａ〜図２Ｃは、静電気放電（ＥＳＤ：Electro-Static Discharge）によって抵抗値が変化する場合のメカニズムを説明するための説明図である。以下では、図２Ａに示すように、抵抗体１２の表面（前面）に酸化膜２２が形成されており、酸化膜２２が形成された抵抗体１２上に第１電極１４が直接形成されている場合を例示する。 (3.1) First Electrode FIGS. 2A to 2C are explanatory diagrams for describing a mechanism in the case where the resistance value changes due to electrostatic discharge (ESD: Electro-Static Discharge). Below, as shown to FIG. 2A, the oxide film 22 is formed in the surface (front surface) of the resistor 12, and the 1st electrode 14 is directly formed on the resistor 12 in which the oxide film 22 was formed. The case is illustrated.

表面に酸化膜２２が形成された抵抗体１２上に第１電極１４を形成した場合、図２Ａに示すように、抵抗体１２と第１電極１４との間に酸化膜２２が介在することになる。この状態で、例えば静電気放電によって電圧を印加すると、酸化膜２２が発熱して抵抗体１２と酸化膜２２との間で相互拡散が起こり（図２Ｂ参照）、抵抗体１２と第１電極１４との間に低抵抗率の層２２Ａが形成される（図２Ｃ参照）。その結果、抵抗体１２と第１電極１４との間の接触抵抗が低下し、これにより抵抗器１の抵抗値が低下する。したがって、抵抗体１２の表面に酸化膜２２が形成されている場合には、例えば逆スパッタリングによって酸化膜２２を除去することが好ましい。   When the first electrode 14 is formed on the resistor 12 having the oxide film 22 formed on the surface, as shown in FIG. 2A, the oxide film 22 intervenes between the resistor 12 and the first electrode 14 Become. In this state, when a voltage is applied, for example, by electrostatic discharge, the oxide film 22 generates heat and interdiffusion occurs between the resistor 12 and the oxide film 22 (see FIG. 2B), the resistor 12 and the first electrode 14 And a low resistivity layer 22A is formed (see FIG. 2C). As a result, the contact resistance between the resistor 12 and the first electrode 14 is reduced, whereby the resistance value of the resistor 1 is reduced. Therefore, when the oxide film 22 is formed on the surface of the resistor 12, it is preferable to remove the oxide film 22 by, for example, reverse sputtering.

図３は、静電気放電による印加電圧と抵抗器１の抵抗値変化率との関係を示すグラフである。図３では、横軸が印加電圧であり、縦軸が抵抗値変化率である。図３中の破線ａ１は、逆スパッタリングを行わない場合を示し、図３中の実線ａ２は、逆スパッタリングにて酸化膜２２を２〔ｎｍ〕除去した場合を示し、図３中の一点鎖線ａ３は、逆スパッタリングにて酸化膜２２を５〔ｎｍ〕除去した場合を示している。図３によれば、逆スパッタリングにて酸化膜２２を除去しない場合には、印加電圧が大きくなるに従って抵抗器１の抵抗値が低下しており、逆スパッタリングにて酸化膜２２を除去することが好ましい。これにより、抵抗器１の抵抗値が変化しにくいという利点がある。   FIG. 3 is a graph showing the relationship between the applied voltage due to electrostatic discharge and the rate of change in resistance value of the resistor 1. In FIG. 3, the horizontal axis is the applied voltage, and the vertical axis is the resistance value change rate. The broken line a1 in FIG. 3 shows the case where reverse sputtering is not performed, and the solid line a2 in FIG. 3 shows the case where oxide film 22 is removed by 2 nm by reverse sputtering, and a dashed dotted line a3 in FIG. Shows a case where the oxide film 22 is removed by 5 nm by reverse sputtering. According to FIG. 3, when the oxide film 22 is not removed by reverse sputtering, the resistance value of the resistor 1 decreases as the applied voltage increases, and the oxide film 22 may be removed by reverse sputtering. preferable. This has the advantage that the resistance value of the resistor 1 is unlikely to change.

図４Ａは、抵抗体１２、接着層１３及び第１電極１４を、この順番で基板１１に積層した場合の平面図である。図４Ｂは、図４ＡのＡ−Ａ断面図である。   FIG. 4A is a plan view of the case where the resistor 12, the adhesive layer 13 and the first electrode 14 are stacked on the substrate 11 in this order. FIG. 4B is a cross-sectional view taken along line A-A of FIG. 4A.

上述のように、抵抗体１２の表面に酸化膜２２が形成されている場合には、酸化膜２２を除去することが好ましいが、抵抗体１２のうち、少なくとも第１電極１４（厳密には接着層１３）が位置する部分の酸化膜２２が除去されていればよい。図４Ａ中の「ＰＯ１」は、前方から見て抵抗体１２において第１電極１４が位置する第１部分であり、図４Ａ中の「ＰＯ２」は、前方から見て抵抗体１２において第１部分を除いた第２部分である。したがって、第１電極１４が位置する第１部分ＰＯ１の酸化膜２２が除去されていればよい。この場合において、第１部分ＰＯ１の全ての酸化膜２２が除去されていなくてもよく、第２部分ＰＯ２の酸化膜２２の量よりも第１部分ＰＯ１の酸化膜２２の量が少なくなっていればよい。言い換えると、抵抗体１２において第１電極１４が位置する第１部分ＰＯ１の単位面積当たりの酸化膜２２の量は、抵抗体１２において第１部分ＰＯ１を除いた第２部分ＰＯ２の単位面積当たりの酸化膜２２の量よりも少ないことが好ましい。この構成によれば、抵抗体１２と第１電極１４との接触抵抗の低下を抑えることができ、その結果、抵抗器１の抵抗値が低下しにくいという利点がある。   As described above, in the case where the oxide film 22 is formed on the surface of the resistor 12, it is preferable to remove the oxide film 22, but at least the first electrode 14 (strictly speaking, adhesion) of the resistor 12 is preferably removed. The oxide film 22 in the portion where the layer 13) is located may be removed. “PO1” in FIG. 4A is a first portion where the first electrode 14 is located in the resistor 12 when viewed from the front, and “PO2” in FIG. 4A is a first portion in the resistor 12 when viewed from the front Is the second part excluding Therefore, the oxide film 22 of the first portion PO1 where the first electrode 14 is located may be removed. In this case, all the oxide film 22 of the first portion PO1 may not be removed, and the amount of the oxide film 22 of the first portion PO1 is smaller than the amount of the oxide film 22 of the second portion PO2. Just do it. In other words, the amount of the oxide film 22 per unit area of the first portion PO1 where the first electrode 14 is located in the resistor 12 is equal to the amount per unit area of the second portion PO2 excluding the first portion PO1 in the resistor 12. Preferably, the amount is smaller than the amount of the oxide film 22. According to this configuration, it is possible to suppress a decrease in contact resistance between the resistor 12 and the first electrode 14, and as a result, there is an advantage that the resistance value of the resistor 1 does not easily decrease.

（３．２）第１保護膜
図５Ａは、抵抗体１２、接着層１３、第１電極１４及び第１保護膜１５を、この順番で基板１１に積層した場合の平面図である。図５Ｂは、図５ＡのＡ−Ａ断面図である。 (3.2) First Protective Film FIG. 5A is a plan view in the case where the resistor 12, the adhesive layer 13, the first electrode 14 and the first protective film 15 are stacked on the substrate 11 in this order. FIG. 5B is a cross-sectional view taken along the line AA of FIG. 5A.

第１保護膜１５は、図５Ａ及び図５Ｂに示すように、抵抗体１２の前面だけでなく、一対の第１電極１４の各々の前面の一部（抵抗体１２側の一部）も覆っている。言い換えると、第１保護膜１５は、基板１１の厚み方向（前方）から見て、抵抗体１２から第１電極１４の少なくとも一部にかけて連続的に覆っている。また、第１保護膜１５は、図５Ａに示すように、上下方向（基板１１の厚み方向及び長手方向の両方と直交する方向、つまり基板１１の短手方向）において、第１電極１４の全長Ｌ１に亘って第１電極１４を覆っている。   As shown in FIGS. 5A and 5B, the first protective film 15 covers not only the front surface of the resistor 12 but also a portion (a portion on the resistor 12 side) of the front surface of each of the pair of first electrodes 14. ing. In other words, the first protective film 15 continuously covers from the resistor 12 to at least a part of the first electrode 14 when viewed from the thickness direction (front) of the substrate 11. Further, as shown in FIG. 5A, the first protective film 15 has the entire length of the first electrode 14 in the vertical direction (direction orthogonal to both the thickness direction and the longitudinal direction of the substrate 11, that is, the short direction of the substrate 11). The first electrode 14 is covered over L1.

このように、第１電極１４における抵抗体１２側の少なくとも一部を第１保護膜１５で覆うことによって、水分が内部に浸入しにくくなる。その結果、上記水分による抵抗体１２の腐食を低減することができ、抵抗器１の抵抗値が低下しにくいという利点がある。   As described above, by covering at least a part of the first electrode 14 on the side of the resistor 12 with the first protective film 15, moisture is less likely to infiltrate into the inside. As a result, the corrosion of the resistor 12 due to the moisture can be reduced, and there is an advantage that the resistance value of the resistor 1 does not easily decrease.

（３．３）第２保護膜
図６Ａは、抵抗体１２、接着層１３、第１電極１４、第１保護膜１５及び第２保護膜１６を、この順番で基板１１に積層した場合の平面図である。図６Ｂは、図６ＡのＡ−Ａ断面図である。 (3.3) Second Protective Film FIG. 6A is a plan view in which the resistor 12, the adhesive layer 13, the first electrode 14, the first protective film 15, and the second protective film 16 are stacked on the substrate 11 in this order. FIG. FIG. 6B is a cross-sectional view taken along line AA of FIG. 6A.

第２保護膜１６は、図６Ａ及び図６Ｂに示すように、前方から見たときの第１電極１４と第１保護膜１５との境界ｂ１を跨ぐように、第１保護膜１５から一対の第１電極１４の各々の一部（第１保護膜１５側の一部）にかけて連続的に覆っている。言い換えると、第２保護膜１６は、基板１１の厚み方向から見たときの第１電極１４と第１保護膜１５との境界ｂ１を跨ぐ境界跨ぎ部１６１を含むように、第１保護膜１５上に位置している。境界跨ぎ部１６１は、前方から見て、第１電極１４と第１保護膜１５との境界ｂ１を含むように第１電極１４と第１保護膜１５とに跨って形成されている。また、第２保護膜１６は、図６Ａに示すように、上下方向（基板１１の厚み方向及び長手方向の両方と直交する方向、つまり基板１１の短手方向）において境界ｂ１の全長Ｌ２に亘って境界ｂ１を覆っている。また、第２保護膜１６は、図６Ａに示すように、前方から見て、第１保護膜１５の全体を覆っている。言い換えると、第１保護膜１５は、基板１１の厚み方向から見て第２保護膜１６で覆われている。   As shown in FIGS. 6A and 6B, the second protective film 16 is formed of a pair of first protective films 15 so as to straddle the boundary b1 between the first electrode 14 and the first protective film 15 when viewed from the front. It covers continuously to a part of each of the first electrodes 14 (a part on the side of the first protective film 15). In other words, the second protective film 16 includes the boundary crossing portion 161 straddling the boundary b1 between the first electrode 14 and the first protective film 15 when viewed in the thickness direction of the substrate 11. Located on the top. The border crossing portion 161 is formed across the first electrode 14 and the first protective film 15 so as to include the border b1 between the first electrode 14 and the first protective film 15 when viewed from the front. Further, as shown in FIG. 6A, the second protective film 16 extends over the entire length L2 of the boundary b1 in the vertical direction (direction orthogonal to both the thickness direction and the longitudinal direction of the substrate 11, ie, the lateral direction of the substrate 11). And covers the boundary b1. In addition, as shown in FIG. 6A, the second protective film 16 covers the entire first protective film 15 as viewed from the front. In other words, the first protective film 15 is covered with the second protective film 16 when viewed in the thickness direction of the substrate 11.

ここで、境界跨ぎ部１６１がない場合、つまり境界ｂ１が第２保護膜１６で覆われていない場合、境界ｂ１から浸入した水分によって抵抗体１２が腐食する可能性がある。これに対して、本実施形態に係る抵抗器１では、境界跨ぎ部１６１によって境界ｂ１から水分が浸入しにくくなっており、その結果、抵抗体１２の腐食を低減することができる。これにより、抵抗器１の抵抗値が低下しにくいという利点がある。   Here, if there is no boundary crossing portion 161, that is, if the boundary b1 is not covered by the second protective film 16, the resistor 12 may be corroded by the water that has entered from the boundary b1. On the other hand, in the resistor 1 according to the present embodiment, moisture is less likely to infiltrate from the boundary b1 by the boundary crossing portion 161, and as a result, corrosion of the resistor 12 can be reduced. This has the advantage that the resistance value of the resistor 1 does not easily decrease.

（３．４）第２電極
図７Ａは、抵抗体１２、接着層１３、第１電極１４、第１保護膜１５、第２保護膜１６及び第２電極１７を、この順番で基板１１に積層した場合の平面図である。図７Ｂは、図７ＡのＡ−Ａ断面図である。 (3.4) Second electrode FIG. 7A shows that the resistor 12, the adhesive layer 13, the first electrode 14, the first protective film 15, the second protective film 16 and the second electrode 17 are laminated on the substrate 11 in this order. It is a top view at the time of having. FIG. 7B is a cross-sectional view taken along line A-A of FIG. 7A.

一対の第２電極１７の各々は、図７Ａ及び図７Ｂに示すように、前方から見たときの第１電極１４と第２保護膜１６との境界ｂ２を跨ぐように、一対の第１電極１４の各々から第２保護膜１６の一部（第１電極１４側の一部）にかけて連続的に覆っている。言い換えると、第２電極１７は、基板１１の厚み方向から見たときの第１電極１４と第２保護膜１６との境界ｂ２を跨ぐ境界跨ぎ部１７１を含むように、第１電極１４上に位置している。境界跨ぎ部１７１は、前方から見て、第１電極１４と第２保護膜１６との境界ｂ２を含むように第１電極１４と第２保護膜１６とに跨って形成されている。また、第２電極１７は、図７Ａに示すように、上下方向（基板１１の厚み方向及び長手方向の両方と直交する方向、つまり基板１１の短手方向）において境界ｂ２の全長Ｌ３に亘って境界ｂ２を覆っている。また、第２電極１７は、図７Ｂに示すように、基板１１の厚み方向から見て抵抗体１２から第１電極１４の少なくとも一部にかけて連続的に覆っている。   As shown in FIGS. 7A and 7B, each of the pair of second electrodes 17 straddles the boundary b2 between the first electrode 14 and the second protective film 16 when viewed from the front, It covers continuously from each of 14 to a part (part by the side of the 1st electrode 14) of the 2nd protective film 16. As shown in FIG. In other words, the second electrode 17 is formed on the first electrode 14 so as to include the boundary crossing portion 171 that crosses the boundary b 2 between the first electrode 14 and the second protective film 16 when viewed in the thickness direction of the substrate 11 positioned. The boundary crossing portion 171 is formed across the first electrode 14 and the second protective film 16 so as to include the boundary b2 between the first electrode 14 and the second protective film 16 when viewed from the front. Further, as shown in FIG. 7A, the second electrode 17 extends over the entire length L3 of the boundary b2 in the vertical direction (direction orthogonal to both the thickness direction and the longitudinal direction of the substrate 11, that is, the lateral direction of the substrate 11). It covers the boundary b2. Further, as shown in FIG. 7B, the second electrode 17 covers continuously from the resistor 12 to at least a part of the first electrode 14 when viewed from the thickness direction of the substrate 11.

ここで、境界跨ぎ部１７１がない場合、つまり境界ｂ２が第２電極１７で覆われていない場合、境界ｂ２から浸入した水分によって抵抗体１２が腐食する可能性がある。これに対して、本実施形態に係る抵抗器１では、境界跨ぎ部１７１によって境界ｂ２から水分が浸入しにくくなっており、その結果、抵抗体１２の腐食を低減することができる。これにより、抵抗器１の抵抗値が低下しにくいという利点がある。   Here, when there is no boundary crossing portion 171, that is, when the boundary b2 is not covered by the second electrode 17, the resistor 12 may be corroded by the moisture that has entered from the boundary b2. On the other hand, in the resistor 1 according to the present embodiment, moisture is less likely to infiltrate from the boundary b2 by the boundary crossing portion 171, and as a result, corrosion of the resistor 12 can be reduced. This has the advantage that the resistance value of the resistor 1 does not easily decrease.

表１は、第２電極１７を構成するニッケル（Ｎｉ）と銅（Ｃｕ）との組成比を表す表である。表１中の「〇」は、抵抗体１２の比抵抗と酸化との相関を満たしていることを表し、表１中の「×」は、上記相関を満たしていないことを表している。ここでいう「相関」を満たすとは、抵抗体１２の比抵抗がある基準値よりも小さく、かつ抵抗体１２が酸化しにくいことをいう。   Table 1 is a table showing the composition ratio of nickel (Ni) and copper (Cu) which constitute the second electrode 17. "O" in Table 1 represents that the correlation between the specific resistance of the resistor 12 and oxidation is satisfied, and "X" in Table 1 represents that the above-mentioned correlation is not satisfied. Here, “to satisfy the“ correlation ”means that the specific resistance of the resistor 12 is smaller than a certain reference value and the resistor 12 is difficult to oxidize.

Figure 2019096834
Figure 2019096834

表１によれば、ニッケルと銅との組成比が４対６、５対５、６対４であれば上記相関を満たし、ニッケルと銅との組成比が３対７、７対３であれば上記相関を満たさない。すなわち、第２電極１７を構成するニッケルと銅との組成比は、４対６、５対５及び６対４のいずれかであることが好ましい。   According to Table 1, if the composition ratio of nickel to copper is 4 to 6, 5 to 5, 6 to 4, the above correlation is satisfied, and if the composition ratio of nickel to copper is 3 to 7, 7 to 3 If the above correlation is not satisfied. That is, the composition ratio of nickel to copper constituting the second electrode 17 is preferably any of 4 to 6, 5 to 5, and 6 to 4.

（３．５）各部の寸法
図８は、図１ＢのＣ部拡大図である。図８中の「ｔ１」は、第１保護膜１５の膜厚であり、図８中の「Ｄ１」は、基板１１の厚み方向から見たときの第１電極１４に対する第２保護膜１６の重なり量である。また、図８中の「Ｄ２」は、基板１１の厚み方向から見たときの第２保護膜１６に対する第２電極１７の重なり量である。 (3.5) Dimensions of Each Part FIG. 8 is an enlarged view of a part C in FIG. 1B. “T1” in FIG. 8 is the film thickness of the first protective film 15, and “D1” in FIG. 8 is the thickness of the second protective film 16 with respect to the first electrode 14 when viewed from the thickness direction of the substrate 11. It is an overlap amount. Further, “D2” in FIG. 8 is the overlapping amount of the second electrode 17 with the second protective film 16 when viewed from the thickness direction of the substrate 11.

（３．５．１）第１保護膜の膜厚
図９は、第１保護膜１５の膜厚と抵抗器１の抵抗値変化率との関係を示すグラフであり、常温においてエッチング液に２時間浸漬させた結果である。図９では、横軸が膜厚であり、縦軸が抵抗値変化率である。図９によれば、第１保護膜１５の膜厚が９０〔ｎｍ〕未満である場合、抵抗器１の抵抗値が数〔％〕程度変化することになる。例えば、第１保護膜１５の膜厚が７０〔ｎｍ〕であれば、抵抗器１の抵抗値は５〔％〕程度変化する。一方、第１保護膜１５の膜厚が９０〔ｎｍ〕以上である場合、抵抗器１の抵抗値の変化率は略ゼロとなる。特に、第１保護膜１５の膜厚が１８０〔ｎｍ〕以上である場合、抵抗器１の抵抗値変化率はゼロである。 (3.5.1) Film Thickness of First Protective Film FIG. 9 is a graph showing the relationship between the film thickness of the first protective film 15 and the rate of change in resistance value of the resistor 1. It is the result of being immersed in time. In FIG. 9, the horizontal axis is the film thickness, and the vertical axis is the resistance value change rate. According to FIG. 9, when the film thickness of the first protective film 15 is less than 90 nm, the resistance value of the resistor 1 changes by about several percent. For example, when the film thickness of the first protective film 15 is 70 nm, the resistance value of the resistor 1 changes by about 5%. On the other hand, when the film thickness of the first protective film 15 is 90 nm or more, the change rate of the resistance value of the resistor 1 is substantially zero. In particular, when the film thickness of the first protective film 15 is 180 nm or more, the resistance value change rate of the resistor 1 is zero.

図９から、第１保護膜１５の膜厚ｔ１の下限値は９０〔ｎｍ〕であるのが好ましく、またタクトタイム、スパッタリング時間等の関係で膜厚ｔ１の上限値は２００〔ｎｍ〕であるのが好ましい。より好ましくは、膜厚ｔ１の下限値は１００〔ｎｍ〕であるのがよく、膜厚ｔ１の上限値は１４０〔ｎｍ〕であるのがよい。このように、第１保護膜１５の膜厚ｔ１を９０〔ｎｍ〕以上にすることで、抵抗器１の抵抗値の変化率が略ゼロとなり、抵抗器１の抵抗値が変化しにくいという利点がある。   From FIG. 9, it is preferable that the lower limit value of the film thickness t1 of the first protective film 15 is 90 nm, and the upper limit value of the film thickness t1 is 200 nm due to the tact time, sputtering time, etc. Is preferred. More preferably, the lower limit of the film thickness t1 is 100 nm, and the upper limit of the film thickness t1 is 140 nm. As described above, by setting the film thickness t1 of the first protective film 15 to 90 nm or more, the change rate of the resistance value of the resistor 1 becomes substantially zero, and the advantage that the resistance value of the resistor 1 does not easily change There is.

（３．５．２）第１電極に対する第２保護膜の重なり量
図１０は、第１電極１４に対する第２保護膜１６の重なり量Ｄ１と抵抗器１の抵抗値変化率との関係を示すグラフであり、ＰＣＢＴ（Pressure Cooker Bias Test）試験による試験結果である。本実施形態では、ＰＣＢＴ試験において、温度１２０〔℃〕、湿度８５〔％ＲＨ〕、印加電圧３１．６〔Ｖ〕であって、試験時間は２４時間である。図１０では、横軸が重なり量Ｄ１であり、縦軸が抵抗値変化率である。また、図１０に示す例では、各プロット点の値は、各プロット点に重なる縦線の範囲内に含まれる１５個のサンプル値の平均値である。図１０によれば、重なり量Ｄ１が５０〔μｍ〕から２００〔μｍ〕の範囲内にあれば、抵抗器１の抵抗値の変化率が略ゼロとなる。つまり、重なり量Ｄ１が５０〔μｍ〕よりも小さい場合には、抵抗器１の抵抗値の変化率が大きくなってしまう。 (3.5.2) Overlap Amount of Second Protective Film on First Electrode FIG. 10 shows the relationship between the overlap amount D1 of the second protective film 16 on the first electrode 14 and the rate of change in resistance value of the resistor 1. It is a graph and it is a test result by a PCBT (Pressure Cooker Bias Test) test. In this embodiment, in the PCBT test, the temperature is 120 ° C., the humidity is 85% RH, the applied voltage is 31.6 V, and the test time is 24 hours. In FIG. 10, the horizontal axis is the overlap amount D1, and the vertical axis is the resistance value change rate. Moreover, in the example shown in FIG. 10, the value of each plot point is an average value of 15 sample values included in the range of the vertical line overlapping each plot point. According to FIG. 10, when the overlap amount D1 is in the range of 50 μm to 200 μm, the change rate of the resistance value of the resistor 1 becomes substantially zero. That is, when the overlap amount D1 is smaller than 50 μm, the change rate of the resistance value of the resistor 1 becomes large.

図１０から、第１電極１４に対する第２保護膜１６の重なり量Ｄ１の下限値は、抵抗器１の抵抗値の変化率が大きくならないように５０〔μｍ〕であるのが好ましく、重なり量Ｄ１の上限値は２００〔μｍ〕であるのが好ましい。より好ましくは、重なり量Ｄ１の下限値は８０〔μｍ〕であるのがよく、重なり量Ｄ１の上限値は１６０〔μｍ〕であるのがよい。このように、第１電極１４に対する第２保護膜１６の重なり量Ｄ１を５０〔μｍ〕以上にすることで、抵抗器１の抵抗値の変化率が略ゼロとなり、抵抗器１の抵抗値が変化しにくいという利点がある。なお、第１電極１４同士が接触しない程度の重なり量Ｄ１が、重なり量Ｄ１の上限値であることは言うまでもない。   From FIG. 10, it is preferable that the lower limit value of the overlap amount D1 of the second protective film 16 with respect to the first electrode 14 be 50 μm so that the change rate of the resistance value of the resistor 1 does not increase. The upper limit of is preferably 200 μm. More preferably, the lower limit of the overlap amount D1 is 80 μm, and the upper limit of the overlap amount D1 is 160 μm. Thus, by setting the overlap amount D1 of the second protective film 16 to the first electrode 14 to 50 μm or more, the change rate of the resistance value of the resistor 1 becomes substantially zero, and the resistance value of the resistor 1 becomes It has the advantage of being hard to change. Needless to say, the overlap amount D1 to such an extent that the first electrodes 14 are not in contact with each other is the upper limit value of the overlap amount D1.

（３．５．３）第２保護膜に対する第２電極の重なり量
図１１は、第２保護膜１６に対する第２電極１７の重なり量Ｄ２と抵抗器１の抵抗値変化率との関係を示すグラフであり、ＰＣＢＴ試験による試験結果である。本実施形態では、ＰＣＢＴ試験において、温度１２０〔℃〕、湿度８５〔％ＲＨ〕、印加電圧３１．６〔Ｖ〕であって、試験時間は２４時間である。図１１では、横軸が重なり量Ｄ２であり、縦軸が抵抗値変化率である。また、図１１に示す例では、各プロット点の値は、各プロット点に重なる縦線の範囲内に含まれる１５個のサンプル値の平均値である。図１１によれば、重なり量Ｄ２が６０〔μｍ〕から１６０〔μｍ〕の範囲内にあれば、抵抗器１の抵抗値の変化率が略ゼロとなる。つまり、重なり量Ｄ２が６０〔μｍ〕よりも小さい場合には、抵抗器１の抵抗値の変化率が大きくなってしまう。 (3.5.3) Overlap Amount of Second Electrode to Second Protective Film FIG. 11 shows the relationship between the overlap amount D2 of the second electrode 17 to the second protective film 16 and the rate of change in resistance value of the resistor 1. It is a graph and it is a test result by a PCBT test. In this embodiment, in the PCBT test, the temperature is 120 ° C., the humidity is 85% RH, the applied voltage is 31.6 V, and the test time is 24 hours. In FIG. 11, the horizontal axis is the overlap amount D2, and the vertical axis is the resistance value change rate. Moreover, in the example shown in FIG. 11, the value of each plot point is an average value of 15 sample values included in the range of the vertical line overlapping each plot point. According to FIG. 11, when the overlap amount D2 is in the range of 60 μm to 160 μm, the change rate of the resistance value of the resistor 1 becomes substantially zero. That is, when the overlap amount D2 is smaller than 60 μm, the rate of change of the resistance value of the resistor 1 becomes large.

図１１から、第２保護膜１６に対する第２電極１７の重なり量Ｄ２の下限値は、抵抗器１の抵抗値の変化率が大きくならないように６０〔μｍ〕であるのが好ましく、重なり量Ｄ２の上限値は１６０〔μｍ〕であるのが好ましい。このように、第２保護膜１６に対する第２電極１７の重なり量Ｄ２を６０〔μｍ〕以上にすることで、抵抗器１の抵抗値の変化率が略ゼロとなり、抵抗器１の抵抗値が変化しにくいという利点がある。なお、第２電極１７同士が接触しない程度の重なり量Ｄ２が、重なり量Ｄ２の上限値であることは言うまでもない。   From FIG. 11, it is preferable that the lower limit value of the overlap amount D2 of the second electrode 17 with respect to the second protective film 16 be 60 μm so that the change rate of the resistance value of the resistor 1 does not increase. The upper limit value of is preferably 160 μm. As described above, by setting the overlap amount D2 of the second electrode 17 to the second protective film 16 to 60 [μm] or more, the change rate of the resistance value of the resistor 1 becomes substantially zero, and the resistance value of the resistor 1 becomes It has the advantage of being hard to change. Needless to say, the overlap amount D2 to such an extent that the second electrodes 17 are not in contact with each other is the upper limit value of the overlap amount D2.

（４）変形例
実施形態１は、本開示の様々な実施形態の一つに過ぎない。実施形態１は、本開示の目的を達成できれば、設計等に応じて種々の変更が可能である。以下、実施形態１の変形例を列挙する。以下に説明する変形例は、適宜組み合わせて適用可能である。 (4) Modifications Embodiment 1 is only one of various embodiments of the present disclosure. The first embodiment can be variously modified according to the design and the like as long as the object of the present disclosure can be achieved. Hereinafter, modifications of the first embodiment will be listed. The modifications described below can be applied in combination as appropriate.

（４．１）変形例１
実施形態１では、抵抗体１２の材料がＮｉＣｒ系合金である場合を例として説明したが、ＮｉＣｒ系合金の場合には高抵抗の抵抗器１を実現することができない。そのため、高抵抗の抵抗器１を実現するためには、抵抗体１２の材料として窒化タンタル（ＴａＮ）を用いることが好ましい。言い換えると、抵抗体１２は、窒化タンタル（ＴａＮ）からなるのが好ましい。以下、実施形態１の変形例１に係る抵抗器１について、図１２を参照して説明する。なお、抵抗体１２の材料以外については実施形態１と同様であり、ここでは抵抗器１の詳細な説明を省略する。 (4.1) Modified Example 1
In the first embodiment, the case where the material of the resistor 12 is a NiCr alloy is described as an example, but in the case of the NiCr alloy, the high resistance resistor 1 can not be realized. Therefore, in order to realize the high resistance resistor 1, it is preferable to use tantalum nitride (TaN) as a material of the resistor 12. In other words, the resistor 12 is preferably made of tantalum nitride (TaN). Hereinafter, the resistor 1 according to the first modification of the first embodiment will be described with reference to FIG. In addition, it is the same as that of Embodiment 1 except the material of the resistor 12, and the detailed description of the resistor 1 is omitted here.

図１２は、窒素（Ｎ）の量に対するタンタル（Ｔａ）の量の比（構成比）と抵抗器１の比抵抗との関係を示すグラフである。図１２では、横軸が構成比であり、縦軸が比抵抗である。図１２によれば、比抵抗は、構成比が大きくなるに従って小さくなっており、例えば構成比が２．５〜４．５の範囲では５００〔μΩ・ｃｍ〕程度まで低下する。一方、構成比が１．０〜２．０の範囲では、比抵抗が５００〔μΩ・ｃｍ〕よりも大きくなる。   FIG. 12 is a graph showing the relationship between the ratio (composition ratio) of the amount of tantalum (Ta) to the amount of nitrogen (N) and the specific resistance of the resistor 1. In FIG. 12, the horizontal axis is the component ratio, and the vertical axis is the resistivity. According to FIG. 12, the specific resistance decreases as the composition ratio increases. For example, when the composition ratio is in the range of 2.5 to 4.5, the resistivity decreases to about 500 μΩ · cm. On the other hand, when the composition ratio is in the range of 1.0 to 2.0, the specific resistance is larger than 500 [μΩ · cm].

したがって、比抵抗の大きい高抵抗な抵抗器１を実現するためには、抵抗体１２の材料として、構成比（窒素の量に対するタンタルの量の比）が１．０〜２．０の範囲の窒化タンタル（ＴａＮ）を用いることが好ましい。   Therefore, in order to realize a high-resistance resistor 1 having a large specific resistance, the material of the resistor 12 has a composition ratio (ratio of the amount of tantalum to the amount of nitrogen) in the range of 1.0 to 2.0. It is preferable to use tantalum nitride (TaN).

（４．２）その他の変形例
以下、その他の変形例を列挙する。 (4.2) Other Modifications Hereinafter, other modifications will be listed.

抵抗器１の定格電力を向上させるためには、抵抗体１２の温度を下げる必要がある。実施形態１では、第１電極１４及び第２電極１７の各々の材料がＣｕ系合金であるため、抵抗体１２で発生する熱を十分に放熱することができず、抵抗体１２の温度を下げることができない可能性がある。そのため、第１電極１４及び第２電極１７のうち、少なくとも第２電極１７は、抵抗体１２で発生する熱を放熱しやすいように、非酸化材料からなるのが好ましく、具体的には、Ａｇを主成分とするＡｇＰｄＣｕからなるのが好ましい。言い換えると、第１電極１４及び第２電極１７は、抵抗体１２に電気的に接続されており、少なくとも第２電極１７は、ＡｇＰｄＣｕを含むのが好ましい。一例として、Ａｇの含有量は９９〔％〕、Ｐｄの含有量は０．５〔％〕、Ｃｕの含有量は０．５〔％〕である。この構成によれば、抵抗体１２で発生する熱を放熱しやすくなり、これにより抵抗体１２の温度を下げることができ、抵抗器１の定格電力を向上させることができる。なお、第１電極１４及び第２電極１７の両方がＡｇＰｄＣｕで構成されていてもよい。   In order to improve the rated power of the resistor 1, it is necessary to lower the temperature of the resistor 12. In the first embodiment, since each material of the first electrode 14 and the second electrode 17 is a Cu-based alloy, the heat generated by the resistor 12 can not be sufficiently dissipated, and the temperature of the resistor 12 is lowered. It may not be possible. Therefore, at least the second electrode 17 out of the first electrode 14 and the second electrode 17 is preferably made of a non-oxidizing material so that the heat generated by the resistor 12 can be easily dissipated. It is preferable to consist of AgPdCu which has as a main component. In other words, preferably, the first electrode 14 and the second electrode 17 are electrically connected to the resistor 12, and at least the second electrode 17 includes AgPdCu. As an example, the content of Ag is 99%, the content of Pd is 0.5%, and the content of Cu is 0.5%. According to this configuration, the heat generated by the resistor 12 can be easily dissipated, whereby the temperature of the resistor 12 can be lowered, and the rated power of the resistor 1 can be improved. Note that both the first electrode 14 and the second electrode 17 may be made of AgPdCu.

実施形態１では、抵抗器１が接着層１３及び第１保護膜１５を備えているが、図１３に示すように、抵抗器１Ａが接着層１３及び第１保護膜１５を備えていなくてもよい。つまり、抵抗器１Ａにおいて、接着層１３及び第１保護膜１５は必須の構成ではない。また、抵抗器１Ａにおいて、接着層１３及び第１保護膜１５の両方が省略されていなくてもよく、接着層１３及び第１保護膜１５の少なくとも一方が省略されていてもよい。   In the first embodiment, the resistor 1 includes the adhesive layer 13 and the first protective film 15. However, as shown in FIG. 13, even if the resistor 1A does not include the adhesive layer 13 and the first protective film 15, Good. That is, in the resistor 1A, the adhesive layer 13 and the first protective film 15 are not essential components. Further, in the resistor 1A, both of the adhesive layer 13 and the first protective film 15 may not be omitted, and at least one of the adhesive layer 13 and the first protective film 15 may be omitted.

さらに、第３電極１８、第４電極１９、第５電極２０及び第６電極２１は省略されていてもよいし、省略されていなくてもよい。   Furthermore, the third electrode 18, the fourth electrode 19, the fifth electrode 20, and the sixth electrode 21 may or may not be omitted.

実施形態１では、基板１１の厚み方向から見て、第１電極１４の全長Ｌ１に亘って第１電極１４が第１保護膜１５で覆われているが（図５Ａ参照）、第１電極１４の全長方向における少なくとも一部が第１保護膜１５で覆われていればよい。   In the first embodiment, the first electrode 14 is covered with the first protective film 15 over the entire length L1 of the first electrode 14 when viewed in the thickness direction of the substrate 11 (see FIG. 5A). It is sufficient that at least a part in the full length direction of the first protective film 15 be covered with the first protective film 15.

実施形態１では、第２保護膜１６は、基板１１の厚み方向から見て、境界ｂ１の全長Ｌ２に亘って境界ｂ１を覆っているが（図６Ａ参照）、境界ｂ１の全長方向における少なくとも一部が第２保護膜１６（境界跨ぎ部１６１）で覆われていればよい。   In the first embodiment, the second protective film 16 covers the boundary b1 over the entire length L2 of the boundary b1 when viewed from the thickness direction of the substrate 11 (see FIG. 6A), but at least one in the entire length direction of the boundary b1. The portion may be covered by the second protective film 16 (boundary crossing portion 161).

実施形態１では、第２電極１７は、基板１１の厚み方向から見て、境界ｂ２の全長Ｌ３に亘って境界ｂ２を覆っているが（図７Ａ参照）、境界ｂ２の全長方向における少なくとも一部が第２電極（境界跨ぎ部１７１）で覆われていればよい。   In the first embodiment, the second electrode 17 covers the boundary b2 over the entire length L3 of the boundary b2 when viewed from the thickness direction of the substrate 11 (see FIG. 7A), but at least a part of the boundary b2 in the entire length direction May be covered by the second electrode (the boundary crossing portion 171).

（実施形態２）
本実施形態に係る抵抗器１Ｂは、図１４Ａに示すように、抵抗体１２で発生する熱を逃がすための放熱膜２３を備えている点で、実施形態１に係る抵抗器１と相違している。なお、それ以外の構成については実施形態１に係る抵抗器１と同様であり、ここでは抵抗器１Ｂの詳細な説明を省略する。 Second Embodiment
The resistor 1B according to the present embodiment differs from the resistor 1 according to the first embodiment in that the resistor 1B according to the present embodiment includes a heat dissipation film 23 for dissipating heat generated by the resistor 12 as shown in FIG. 14A. There is. The other configuration is the same as that of the resistor 1 according to the first embodiment, and the detailed description of the resistor 1B is omitted here.

本実施形態に係る抵抗器１Ｂは、図１４Ａに示すように、基板１１と、抵抗体１２と、一対の接着層１３と、一対の第１電極１４と、第１保護膜１５と、第２保護膜（保護膜）１６と、一対の第２電極１７と、を備えている。また、本実施形態に係る抵抗器１Ｂは、一対の第３電極１８と、一対の第４電極１９と、一対の第５電極２０と、一対の第６電極２１と、放熱膜２３と、を備えている。基板１１は、図１４Ａに示すように、第１面１１１と、基板１１の厚み方向（前後方向）において第１面１１１と反対側の第２面１１２と、を有している。本実施形態では、第１面１１１は基板１１の前面であり、第２面１１２は基板１１の後面である。   The resistor 1B according to the present embodiment is, as shown in FIG. 14A, a substrate 11, a resistor 12, a pair of adhesive layers 13, a pair of first electrodes 14, a first protective film 15, and a second A protective film (protective film) 16 and a pair of second electrodes 17 are provided. Further, the resistor 1B according to the present embodiment includes the pair of third electrodes 18, the pair of fourth electrodes 19, the pair of fifth electrodes 20, the pair of sixth electrodes 21, and the heat dissipation film 23. Have. The substrate 11 has a first surface 111 and a second surface 112 opposite to the first surface 111 in the thickness direction (front-rear direction) of the substrate 11, as shown in FIG. 14A. In the present embodiment, the first surface 111 is a front surface of the substrate 11, and the second surface 112 is a rear surface of the substrate 11.

放熱膜２３は、熱抵抗の小さい金属材料（例えば、銅、アルミニウム等）からなる。放熱膜２３は、例えばスパッタリング、印刷等によって基板１１の第２面１１２の中央部分に形成（成膜）される。放熱膜２３の形状は、矩形状、円形状、三角形状等、任意の形状が可能である。なお、放熱膜２３の厚み寸法（前後寸法）は、抵抗器１Ｂをプリント基板に実装した状態において、放熱膜２３の表面（後面）がプリント基板の表面（実装面）に接触する寸法であることが好ましい。   The heat dissipation film 23 is made of a metal material (for example, copper, aluminum, etc.) having a small thermal resistance. The heat dissipation film 23 is formed (deposited) on the central portion of the second surface 112 of the substrate 11 by, for example, sputtering, printing or the like. The shape of the heat dissipation film 23 may be any shape such as a rectangular shape, a circular shape, or a triangular shape. The thickness dimension (front-rear dimension) of the heat radiation film 23 is such that the surface (rear surface) of the heat radiation film 23 contacts the surface (mounting surface) of the printed circuit board in a state where the resistor 1B is mounted on the printed circuit board. Is preferred.

次に、抵抗体１２で発生した熱をプリント基板に放熱する動作を簡単に説明する。抵抗体１２で発生した熱は、基板１１を介して放熱膜２３に伝達される（図１４Ａの矢印Ａ１参照）。そして、放熱膜２３へと伝達された熱は、放熱膜２３がプリント基板の表面に接触していることから、放熱膜２３からプリント基板へと放熱される。このように、放熱膜２３を設けることによって、抵抗体１２で発生した熱をプリント基板へと放熱することができる。その結果、抵抗器１Ｂの定格電力を向上させることができる。   Next, the operation of radiating the heat generated by the resistor 12 to the printed circuit board will be briefly described. The heat generated by the resistor 12 is transferred to the heat dissipation film 23 through the substrate 11 (see arrow A1 in FIG. 14A). Then, the heat transferred to the heat dissipation film 23 is dissipated from the heat dissipation film 23 to the printed circuit board because the heat dissipation film 23 is in contact with the surface of the printed circuit board. Thus, by providing the heat dissipation film 23, the heat generated by the resistor 12 can be dissipated to the printed circuit board. As a result, the rated power of the resistor 1B can be improved.

また、図１４Ｂに示すように、放熱膜２３Ｂが樹脂層２４で覆われていてもよい。本実施形態の変形例に係る抵抗器１Ｃは、図１４Ｂに示すように、基板１１と、抵抗体１２と、一対の接着層１３と、一対の第１電極１４と、第１保護膜１５と、第２保護膜（保護膜）１６と、一対の第２電極１７と、を備えている。また、本実施形態の変形例に係る抵抗器１Ｃは、一対の第３電極１８と、一対の第４電極１９と、一対の第５電極２０と、一対の第６電極２１と、放熱膜２３Ｂと、樹脂層２４と、を備えている。基板１１は、抵抗体１２が形成される第１面１１１と、基板１１の厚み方向において第１面１１１と反対側の第２面１１２と、を有している。   In addition, as shown in FIG. 14B, the heat dissipation film 23B may be covered with the resin layer 24. As shown in FIG. 14B, a resistor 1C according to a modification of the present embodiment includes a substrate 11, a resistor 12, a pair of adhesive layers 13, a pair of first electrodes 14, and a first protective film 15. And a second protective film (protective film) 16 and a pair of second electrodes 17. Further, the resistor 1C according to the modification of the present embodiment includes the pair of third electrodes 18, the pair of fourth electrodes 19, the pair of fifth electrodes 20, the pair of sixth electrodes 21, and the heat dissipation film 23B. And the resin layer 24. The substrate 11 has a first surface 111 on which the resistor 12 is formed, and a second surface 112 opposite to the first surface 111 in the thickness direction of the substrate 11.

放熱膜２３Ｂは、放熱膜２３と同様に、熱抵抗の小さい金属材料からなり、例えばスパッタリング、印刷等によって基板１１の第２面１１２の中央部分に形成される。また、本変形例では、樹脂層２４によって放熱膜２３Ｂが覆われている。樹脂層２４は、例えばエポキシ樹脂からなり、スクリーン印刷にて形成される。   The heat dissipation film 23B is made of a metal material having a small thermal resistance, like the heat dissipation film 23, and is formed on the central portion of the second surface 112 of the substrate 11 by, for example, sputtering or printing. Further, in the present modification, the heat dissipation film 23B is covered with the resin layer 24. The resin layer 24 is made of, for example, an epoxy resin, and is formed by screen printing.

本変形例に係る抵抗器１Ｃによれば、抵抗体１２で発生した熱を放熱膜２３Ｂによって後面側（プリント基板側）に伝達することができ（図１４Ｂの矢印Ａ２参照）、さらにプリント基板へと放熱することができる。これにより、抵抗器１Ｃの定格電力を向上させることができる。   According to the resistor 1C according to the present modification, the heat generated by the resistor 12 can be transmitted to the rear side (printed board side) by the heat dissipation film 23B (see arrow A2 in FIG. 14B), and further to the printed board Can dissipate heat. Thereby, the rated power of the resistor 1C can be improved.

本実施形態に係る抵抗器１Ｂは、基板１１と、抵抗体１２と、放熱膜２３と、を備える。基板１１は、第１面１１１と、第２面１１２と、を有する。第２面１１２は、基板１１の厚み方向において第１面１１１と反対側の面である。抵抗体１２は、第１面１１１上に位置する。放熱膜２３は、第２面１１２上に位置する。   The resistor 1B according to the present embodiment includes a substrate 11, a resistor 12, and a heat dissipation film 23. The substrate 11 has a first surface 111 and a second surface 112. The second surface 112 is a surface opposite to the first surface 111 in the thickness direction of the substrate 11. The resistor 12 is located on the first surface 111. The heat dissipation film 23 is located on the second surface 112.

また、本実施形態の変形例に係る抵抗器１Ｃは、基板１１と、抵抗体１２と、放熱膜２３Ｂと、樹脂層２４と、を備える。基板１１は、第１面１１１と、第２面１１２と、を有する。第２面１１２は、基板１１の厚み方向において第１面１１１と反対側の面である。抵抗体１２は、第１面１１１上に位置する。放熱膜２３Ｂは、第２面１１２上に位置する。樹脂層２４は、放熱膜２３Ｂ上に位置する。   Further, a resistor 1C according to a modification of the present embodiment includes a substrate 11, a resistor 12, a heat dissipation film 23B, and a resin layer 24. The substrate 11 has a first surface 111 and a second surface 112. The second surface 112 is a surface opposite to the first surface 111 in the thickness direction of the substrate 11. The resistor 12 is located on the first surface 111. The heat dissipation film 23 B is located on the second surface 112. The resin layer 24 is located on the heat dissipation film 23B.

なお、本実施形態に係る抵抗器１Ｂ，１Ｃにおいて、上述の接着層１３は必須の構成ではなく、省略されていてもよい。   In the resistors 1B and 1C according to the present embodiment, the above-described adhesive layer 13 is not an essential component, and may be omitted.

実施形態２（変形例を含む）で説明した構成は、実施形態１で説明した構成（変形例を含む）と適宜組み合わせて適用可能である。   The configuration described in the second embodiment (including the modification) can be appropriately combined with the configuration (including the modification) described in the first embodiment.

（まとめ）
以上説明したように、第１の態様に係る抵抗器（１）は、基板（１１）と、抵抗体（１２）と、第１電極（１４）と、第２保護膜（１６）（保護膜）と、第２電極（１７）と、を備える。抵抗体（１２）は、基板（１１）上に位置する。第１電極（１４）は、抵抗体（１２）上に位置する。第２保護膜（１６）は、抵抗体（１２）上に位置する。第２電極（１７）は、基板（１１）の厚み方向から見たときの第１電極（１４）と第２保護膜（１６）との境界（ｂ２）を跨ぐ境界跨ぎ部（１７１）を含むように第１電極（１４）上に位置する。 (Summary)
As described above, the resistor (1) according to the first aspect includes the substrate (11), the resistor (12), the first electrode (14), and the second protective film (16) (protective film And a second electrode (17). The resistor (12) is located on the substrate (11). The first electrode (14) is located on the resistor (12). The second protective film (16) is located on the resistor (12). The second electrode (17) includes a boundary crossing portion (171) straddling the boundary (b2) between the first electrode (14) and the second protective film (16) when viewed in the thickness direction of the substrate (11). As such, it is located on the first electrode (14).

この態様によれば、境界跨ぎ部（１７１）によって第１電極（１４）と第２保護膜（１６）との境界（ｂ２）から水分が浸入しにくくなる。その結果、上記水分による抵抗体（１２）の腐食を低減することができ、抵抗器（１）の抵抗値が低下しにくいという利点がある。   According to this aspect, water is less likely to infiltrate from the boundary (b2) between the first electrode (14) and the second protective film (16) by the boundary crossing portion (171). As a result, the corrosion of the resistor (12) due to the moisture can be reduced, and there is an advantage that the resistance value of the resistor (1) is hardly reduced.

第２の態様に係る抵抗器（１）では、第１の態様において、境界跨ぎ部（１７１）は、境界（ｂ２）の全長（Ｌ３）に亘って境界（ｂ２）を覆っている。   In the resistor (1) according to the second aspect, in the first aspect, the boundary crossing portion (171) covers the boundary (b2) over the entire length (L3) of the boundary (b2).

この態様によれば、第１電極（１４）と第２保護膜（１６）との境界（ｂ２）を全長（Ｌ３）に亘って境界跨ぎ部（１７１）で覆っているので、境界（ｂ２）から水分が浸入しにくくなる。その結果、上記水分による抵抗体（１２）の腐食を低減することができ、抵抗器（１）の抵抗値が低下しにくいという利点がある。   According to this aspect, since the boundary (b2) between the first electrode (14) and the second protective film (16) is covered by the boundary crossing portion (171) over the entire length (L3), the boundary (b2) Moisture is less likely to infiltrate. As a result, the corrosion of the resistor (12) due to the moisture can be reduced, and there is an advantage that the resistance value of the resistor (1) is hardly reduced.

第３の態様に係る抵抗器（１）では、第１又は２の態様において、基板（１１）の厚み方向から見たときの第２保護膜（１６）に対する第２電極（１７）の重なり量（Ｄ２）は、６０マイクロメートル以上である。   In the resistor (1) according to the third aspect, in the first or second aspect, the overlapping amount of the second electrode (17) with respect to the second protective film (16) when viewed from the thickness direction of the substrate (11) (D2) is 60 micrometers or more.

この態様によれば、第２保護膜（１６）に対する第２電極（１７）の重なり量（Ｄ２）を６０マイクロメートル以上とすることで、抵抗器（１）の抵抗値が低下しにくくなるという利点がある。   According to this aspect, by setting the overlapping amount (D2) of the second electrode (17) to the second protective film (16) to 60 micrometers or more, the resistance value of the resistor (1) is less likely to decrease. There is an advantage.

第４の態様に係る抵抗器（１）では、第１〜３のいずれかの態様において、第２保護膜（１６）は、基板（１１）の厚み方向から見て抵抗体（１２）から第１電極（１４）の少なくとも一部にかけて連続的に覆っている。   In the resistor (1) according to the fourth aspect, in any one of the first to third aspects, the second protective film (16) is formed from the resistor (12) when viewed from the thickness direction of the substrate (11). It covers continuously to at least one copy of 1 electrode (14).

この態様によれば、第２保護膜（１６）が第１電極（１４）の少なくとも一部を覆っているので、水分が浸入しにくくなる。その結果、抵抗体（１２）の腐食を低減することができ、抵抗器（１）の抵抗値が低下しにくいという利点がある。   According to this aspect, since the second protective film (16) covers at least a part of the first electrode (14), it is difficult for moisture to infiltrate. As a result, the corrosion of the resistor (12) can be reduced, and there is an advantage that the resistance value of the resistor (1) does not easily decrease.

第５の態様に係る抵抗器（１）では、第１〜４のいずれかの態様において、第１電極（１４）及び第２電極（１７）は、抵抗体（１２）に電気的に接続されている。少なくとも第２電極（１７）は、ＡｇＰｄＣｕを含む。   In the resistor (1) according to the fifth aspect, in any of the first to fourth aspects, the first electrode (14) and the second electrode (17) are electrically connected to the resistor (12). ing. At least the second electrode (17) contains AgPdCu.

この態様によれば、抵抗体（１２）に電気的に接続されている第２電極（１７）がＡｇＰｄＣｕを含んでいるので、抵抗体（１２）で発生した熱を逃がしやすくなるという利点がある。   According to this aspect, since the second electrode (17) electrically connected to the resistor (12) contains AgPdCu, there is an advantage that the heat generated in the resistor (12) can be easily dissipated .

第２〜５の態様に係る構成については、抵抗器（１）の必須の構成ではなく、適宜省略可能である。   The configurations according to the second to fifth aspects are not essential configurations of the resistor (1), and can be appropriately omitted.

１ 抵抗器
１１ 基板
１２ 抵抗体
１４ 第１電極
１６ 第２保護膜（保護膜）
１７ 第２電極
Ｌ３ 第１電極と保護膜との境界の全長 Reference Signs List 1 resistor 11 substrate 12 resistor 14 first electrode 16 second protective film (protective film)
17 Second electrode L3 Total length of boundary between first electrode and protective film

Claims (5)

基板と、
前記基板上に位置する抵抗体と、
前記抵抗体上に位置する第１電極と、
前記抵抗体上に位置する保護膜と、
前記基板の厚み方向から見たときの前記第１電極と前記保護膜との境界を跨ぐ境界跨ぎ部を含むように前記第１電極上に位置する第２電極と、を備える
抵抗器。 A substrate,
A resistor located on the substrate;
A first electrode located on the resistor;
A protective film located on the resistor;
A second electrode positioned on the first electrode so as to include a boundary crossing portion across the boundary between the first electrode and the protective film when viewed from the thickness direction of the substrate. 前記境界跨ぎ部は、前記境界の全長に亘って前記境界を覆っている
請求項１に記載の抵抗器。 The resistor according to claim 1, wherein the boundary crossing portion covers the boundary over the entire length of the boundary. 前記基板の厚み方向から見たときの前記保護膜に対する前記第２電極の重なり量は、６０マイクロメートル以上である
請求項１又は２に記載の抵抗器。 The resistor according to claim 1 or 2, wherein the overlapping amount of the second electrode with respect to the protective film when viewed from the thickness direction of the substrate is 60 micrometers or more. 前記保護膜は、前記基板の厚み方向から見て前記抵抗体から前記第１電極の少なくとも一部にかけて連続的に覆っている
請求項１〜３のいずれか１項に記載の抵抗器。 The resistor according to any one of claims 1 to 3, wherein the protective film is continuously covered from the resistor to at least a part of the first electrode when viewed in the thickness direction of the substrate. 前記第１電極及び前記第２電極は、前記抵抗体に電気的に接続されており、
少なくとも前記第２電極は、ＡｇＰｄＣｕを含む
請求項１〜４のいずれか１項に記載の抵抗器。 The first electrode and the second electrode are electrically connected to the resistor,
The resistor according to any one of claims 1 to 4, wherein at least the second electrode contains AgPdCu.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314402A (en) * 1986-07-04 1988-01-21 多摩電気工業株式会社 Manufacture of chip resistor
JPS646006U (en) * 1987-06-30 1989-01-13
JPH01189102A (en) * 1988-01-25 1989-07-28 Tdk Corp Manufacture of electrodes of circuit component
JPH07176411A (en) * 1993-12-21 1995-07-14 Matsushita Electric Ind Co Ltd Manufacture of chip resistor and structure thereof
JP2001155957A (en) * 1999-04-30 2001-06-08 Matsushita Electric Ind Co Ltd Electronic component
JP2002353001A (en) * 2001-05-25 2002-12-06 Tateyama Kagaku Kogyo Kk Thick film chip resistor
JP2016171306A (en) * 2015-02-19 2016-09-23 ローム株式会社 Chip resistor and method for manufacturing the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314402A (en) * 1986-07-04 1988-01-21 多摩電気工業株式会社 Manufacture of chip resistor
JPS646006U (en) * 1987-06-30 1989-01-13
JPH01189102A (en) * 1988-01-25 1989-07-28 Tdk Corp Manufacture of electrodes of circuit component
JPH07176411A (en) * 1993-12-21 1995-07-14 Matsushita Electric Ind Co Ltd Manufacture of chip resistor and structure thereof
JP2001155957A (en) * 1999-04-30 2001-06-08 Matsushita Electric Ind Co Ltd Electronic component
JP2002353001A (en) * 2001-05-25 2002-12-06 Tateyama Kagaku Kogyo Kk Thick film chip resistor
JP2016171306A (en) * 2015-02-19 2016-09-23 ローム株式会社 Chip resistor and method for manufacturing the same

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