JP2019087715A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
- Publication number
- JP2019087715A JP2019087715A JP2018016699A JP2018016699A JP2019087715A JP 2019087715 A JP2019087715 A JP 2019087715A JP 2018016699 A JP2018016699 A JP 2018016699A JP 2018016699 A JP2018016699 A JP 2018016699A JP 2019087715 A JP2019087715 A JP 2019087715A
- Authority
- JP
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- Prior art keywords
- wavelength conversion
- reflector
- led package
- conversion panel
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 93
- 239000011521 glass Substances 0.000 claims abstract description 63
- 238000007789 sealing Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 35
- 239000002096 quantum dot Substances 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000000499 gel Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
12 (第1)段差
13 上部壁
14 下部壁
20 波長変換パネル
21a 下部ガラス
21b 上部ガラス
22 波長変換シート
30 LEDチップ
31a、31b 電極パッド
40 樹脂材反射壁
60 メタルシーリング部
62 充填部
70 メタルめっき層
80 樹脂材側面密封部
121 第2段差
201 リセス
Claims (14)
- キャビティが形成されたリフレクタと、
前記リフレクタのキャビティの下側空間に配置されたLEDチップと、
下部ガラス、上部ガラス、及び前記下部ガラスと上部ガラスとの間に介在する波長変換シートを含んで前記リフレクタのキャビティの上側空間に配置された波長変換パネルと、
前記下部ガラスの側面及び前記上部ガラスの側面に形成されて前記波長変換パネルと前記リフレクタとを連結するシーリング部と、を備えることを特徴とするLEDパッケージ。 - 前記リフレクタは、内壁面に形成された段差を含み、
前記波長変換パネルは、前記段差に接して支持されることを特徴とする請求項1に記載のLEDパッケージ。 - 前記リフレクタの内壁面は、前記波長変換パネルが載置された第1段差と、前記第1段差につながって前記第1段差の下部に形成され、前記シーリング部が充填された第2段差と、を含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記波長変換パネルは、前記波長変換シートの側面が前記下部ガラスの側面及び前記上部ガラスの側面よりも内側に陥没して形成されたリセスを含み、
前記シーリング部の一部は、前記リセス内に充填されていることを特徴とする請求項1に記載のLEDパッケージ。 - 前記シーリング部は、前記リフレクタの内壁面と前記波長変換パネルとの間のギャップにパウダー状、液状、又はゲル状に充填された熱伝導性メタルが固相化されて形成されたことを特徴とする請求項1に記載のLEDパッケージ。
- 前記リフレクタ及び前記シーリング部を覆うように形成されて、前記リフレクタと前記シーリング部とを一体化するめっき層をさらに含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記波長変換パネルは、前記波長変換シートの側面が前記下部ガラスの側面及び前記上部ガラスの側面よりも内側に陥没して形成されたリセスと、前記リセスにおいて前記波長変換シートの側面と前記シーリング部との間に位置する側面密封部と、をさらに含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記LEDチップは、前記リフレクタのキャビティの下側空間に配置された状態で前記LEDチップの上面及び側面を覆う樹脂材反射壁によって前記リフレクタと一体化されたことを特徴とする請求項1に記載のLEDパッケージ。
- 前記LEDチップは、前記リフレクタの下端の開放部を介して下部に露出した一対の電極パッドを含むことを特徴とする請求項8に記載のLEDパッケージ。
- 前記樹脂材反射壁は、非結晶性球状シリカ材料と樹脂とを混合した材料が前記リフレクタのキャビティの下側空間に注入された後に硬化させて形成されたことを特徴とする請求項8に記載のLEDパッケージ。
- 前記リフレクタの下部壁は、内側面が上方から下方に向かって収斂する傾斜面を成すように形成されていることを特徴とする請求項8に記載のLEDパッケージ。
- 前記波長変換シートに含まれる波長変換材料は、QD(Quantum Dot)を含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記シーリング部は、前記波長変換パネルが前記リフレクタの高さの中間の位置に水平に配置されるときに前記波長変換パネルの側面と前記リフレクタの上部壁の内側面との間に生じたギャップに、液状、ゲル状、又はパウダー状に充填されたメタルが固相化されて形成されたことを特徴とする請求項1に記載のLEDパッケージ。
- 前記シーリング部は、金属又は金属性質を含む材質で形成されていることを特徴とする請求項1に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170146590A KR20190051205A (ko) | 2017-11-06 | 2017-11-06 | 엘이디 패키지 |
KR10-2017-0146590 | 2017-11-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018187635A Division JP6814774B2 (ja) | 2017-11-06 | 2018-10-02 | Ledパッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6415765B1 JP6415765B1 (ja) | 2018-10-31 |
JP2019087715A true JP2019087715A (ja) | 2019-06-06 |
Family
ID=64017165
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018016699A Active JP6415765B1 (ja) | 2017-11-06 | 2018-02-01 | Ledパッケージ |
JP2018187635A Active JP6814774B2 (ja) | 2017-11-06 | 2018-10-02 | Ledパッケージ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018187635A Active JP6814774B2 (ja) | 2017-11-06 | 2018-10-02 | Ledパッケージ |
Country Status (4)
Country | Link |
---|---|
US (2) | US10586897B2 (ja) |
JP (2) | JP6415765B1 (ja) |
KR (1) | KR20190051205A (ja) |
WO (1) | WO2019088439A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109301053B (zh) * | 2018-11-09 | 2024-07-19 | 易美芯光(北京)科技有限公司 | 一种量子点led封装结构及其制造方法 |
JP7370274B2 (ja) * | 2020-02-18 | 2023-10-27 | 日機装株式会社 | 半導体パッケージ及び半導体発光装置 |
CN115188874B (zh) * | 2022-07-12 | 2023-05-09 | 珠海市宏科光电子有限公司 | 一种清晰、明亮的led光源及其制备方法 |
Citations (5)
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JP2009071005A (ja) * | 2007-09-13 | 2009-04-02 | Sony Corp | 波長変換部材及びその製造方法、並びに、波長変換部材を用いた発光デバイス |
WO2012132232A1 (ja) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | 半導体発光装置 |
WO2015020205A1 (ja) * | 2013-08-09 | 2015-02-12 | 株式会社光波 | 発光装置 |
WO2015190241A1 (ja) * | 2014-06-09 | 2015-12-17 | 日本電気硝子株式会社 | 発光デバイス |
WO2015194297A1 (ja) * | 2014-06-18 | 2015-12-23 | 日本電気硝子株式会社 | 発光デバイス、波長変換部材及び波長変換部材の製造方法 |
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JPS59206869A (ja) | 1983-05-11 | 1984-11-22 | 三菱電機株式会社 | 液晶表示装置 |
JP3131354B2 (ja) | 1994-09-02 | 2001-01-31 | シャープ株式会社 | 液晶表示装置 |
JP4645071B2 (ja) * | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | パッケージ成型体およびそれを用いた半導体装置 |
JP5092866B2 (ja) | 2008-04-18 | 2012-12-05 | 日亜化学工業株式会社 | ディスプレイユニット及びその製造方法 |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
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JP5433399B2 (ja) * | 2009-12-22 | 2014-03-05 | パナソニック株式会社 | 発光装置 |
KR101761857B1 (ko) * | 2011-01-25 | 2017-07-26 | 서울반도체 주식회사 | 발광다이오드 패키지 |
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KR101550779B1 (ko) * | 2014-10-31 | 2015-09-18 | 주식회사 루멘스 | 발광 소자 패키지 |
KR20170093405A (ko) * | 2016-02-05 | 2017-08-16 | 주식회사 루멘스 | 엘이디 모듈 및 그 제조방법 |
JP6577874B2 (ja) * | 2016-01-07 | 2019-09-18 | 富士フイルム株式会社 | 波長変換フィルム |
-
2017
- 2017-11-06 KR KR1020170146590A patent/KR20190051205A/ko unknown
-
2018
- 2018-02-01 JP JP2018016699A patent/JP6415765B1/ja active Active
- 2018-09-05 WO PCT/KR2018/010337 patent/WO2019088439A1/ko active Application Filing
- 2018-10-02 JP JP2018187635A patent/JP6814774B2/ja active Active
- 2018-10-17 US US16/162,745 patent/US10586897B2/en active Active
-
2020
- 2020-01-29 US US16/775,539 patent/US20200168769A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009071005A (ja) * | 2007-09-13 | 2009-04-02 | Sony Corp | 波長変換部材及びその製造方法、並びに、波長変換部材を用いた発光デバイス |
WO2012132232A1 (ja) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | 半導体発光装置 |
WO2015020205A1 (ja) * | 2013-08-09 | 2015-02-12 | 株式会社光波 | 発光装置 |
WO2015190241A1 (ja) * | 2014-06-09 | 2015-12-17 | 日本電気硝子株式会社 | 発光デバイス |
WO2015194297A1 (ja) * | 2014-06-18 | 2015-12-23 | 日本電気硝子株式会社 | 発光デバイス、波長変換部材及び波長変換部材の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10586897B2 (en) | 2020-03-10 |
JP2019087734A (ja) | 2019-06-06 |
JP6415765B1 (ja) | 2018-10-31 |
KR20190051205A (ko) | 2019-05-15 |
US20200168769A1 (en) | 2020-05-28 |
WO2019088439A1 (ko) | 2019-05-09 |
JP6814774B2 (ja) | 2021-01-20 |
US20190140147A1 (en) | 2019-05-09 |
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