JP2019075533A - クロスポイント型スピン蓄積トルクmram - Google Patents
クロスポイント型スピン蓄積トルクmram Download PDFInfo
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (20)
- 読み出し線層における複数の読み出し線と、
書き込み線層における複数の書き込み線と、
前記読み出し線層と前記書き込み線層との間に配設されるスピン蓄積線層における複数のスピン蓄積線であって、前記読み出し線および前記書き込み線を水平に横断する、スピン蓄積線と、
複数の垂直磁気抵抗ランダムアクセスメモリ(MRAM)セルと、
を備え、
前記垂直MRAMセルは、スピン蓄積線と書き込み線との間に結合される偏光子、および、前記スピン蓄積線と読み出し線との間に結合される磁気トンネル接合であって、前記磁気トンネル接合および前記偏光子が垂直に整列されるようにする磁気トンネル結合を含む、装置。 - 前記垂直MRAMセルの面密度は、1セル当たり、プロセスフィーチャサイズの2乗の4倍である、請求項1に記載の装置。
- 前記垂直MRAMセルは、前記磁気トンネル結合と前記読み出し線との間に配設される読み出しセレクタ、および、前記偏光子と前記書き込み線との間に配設される書き込みセレクタをさらに備える、請求項1に記載の装置。
- 前記読み出しセレクタおよび前記書き込みセレクタは前記偏光子および前記磁気トンネル接合と垂直に整列される、請求項3に記載の装置。
- 前記読み出しセレクタはユニポーラセレクタを含み、前記書き込みセレクタはバイポーラセレクタを含む、請求項3に記載の装置。
- 前記読み出し線は前記書き込み線に平行であり、前記スピン蓄積線は前記読み出し線および前記書き込み線に直角である、請求項1に記載の装置。
- 前記磁気トンネル結合は、固定層、障壁層、および自由層を含み、前記障壁層は前記固定層と前記自由層との間に配設され、前記自由層は前記スピン蓄積線と接触している、請求項1に記載の装置。
- 前記固定層の磁気モーメント、前記自由層の磁気モーメント、および前記偏光子の磁気モーメントは、前記障壁層に垂直である、請求項7に記載の装置。
- 前記スピン蓄積線は、銀、銅、アルミニウム、およびグラフェンのうちの1つまたは複数を含む、請求項1に記載の装置。
- 前記偏光子はスピン分極した強磁性材料を含む、請求項1に記載の装置。
- 第2の複数の垂直MRAMセルをさらに含み、前記複数の垂直MRAMセルおよび前記第2の複数の垂直MRAMセルは3次元アレイを形成し、前記第2の複数の垂直MRAMセルは、前記読み出し線および前記書き込み線のうちの1つまたは複数を前記複数の垂直MRAMセルと共有する、請求項1に記載の装置。
- 前記読み出し線、前記書き込み線、および前記スピン蓄積線に対する電圧を制御することによって前記垂直MRAMセルに対する読み出し動作および書き込み動作を行うコントローラをさらに含む、請求項1に記載の装置。
- 磁気ランダムアクセスメモリ(MRAM)アレイを備えるシステムであって、
前記磁気ランダムアクセスメモリアレイは、
複数の読み出し線と、
複数の書き込み線と、
前記読み出し線と前記書き込み線との間に配設されるスピン蓄積層における複数のスピン蓄積線であって、前記読み出し線および前記書き込み線に直角であるスピン蓄積線と、
複数のMRAMセルであって、書き込みセレクタ、偏光子、磁気トンネル接合、および読み出しセレクタを含み、前記書き込みセレクタおよび偏光子は前記スピン蓄積線と前記書き込み線との間に直列に電気的に結合され、前記読み出しセレクタおよび磁気トンネル接合は前記スピン蓄積線と前記読み出し線との間に直列に電気的に結合される、MRAMセルと、
前記読み出し線、前記書き込み線、および前記スピン蓄積線に対する電圧を制御することによって前記アレイに対する読み出し動作および書き込み動作を行うコントローラと、を含む、システム。 - 前記コントローラは、選択されたMRAMセルに対する読み出し動作を、読み出し電圧を前記選択されたセルに対する読み出し線に結合し、前記選択されたセルのためのスピン蓄積線を接地し、および、前記読み出し電圧の半分を他の読み出し線、他のスピン蓄積線、および前記書き込み線に結合することによって行う、請求項13に記載のシステム。
- 前記コントローラは、第1のビット値を選択されたセルに書き込むための書き込み動作を、書き込み電圧を前記選択されたセルに対する書き込み線に結合し、前記選択されたセルのためのスピン蓄積線を接地し、および、前記書き込み電圧の半分を、他の書き込み線、他のスピン蓄積線、および前記読み出し線に結合することによって行う、請求項13に記載のシステム。
- 前記コントローラは、前記書き込み動作中、前記選択されたセルに対する読み出し線に前記書き込み電圧の半分より大きい電圧を加える、請求項15に記載のシステム。
- 前記コントローラは、前記第1のビット値と異なる第2のビット値を前記選択されたセルに書き込むための書き込み動作を、前記書き込み電圧を前記選択されたセルに対する前記スピン蓄積線に結合し、前記選択されたセルのための前記書き込み線を接地し、および前記書き込み電圧の半分を、他の書き込み線、他のスピン蓄積線、および前記読み出し線に結合することによって行う、請求項15に記載のシステム。
- 磁気抵抗を利用してデータ値を記憶する手段と、
記憶された前記データ値を変更するために、前記磁気抵抗を利用してデータ値を記憶する手段に、隣接して、磁気スピンを蓄積する手段と、
蓄積された前記磁気スピンを生成するために電気的な書き込み電流をスピン分極する手段と、を備え、
前記磁気抵抗を利用してデータ値を記憶する手段、前記磁気スピンを蓄積する手段、および前記スピン分極する手段は、クロスポイント型磁気抵抗メモリアレイにおいて垂直に整列される、装置。 - 第1の電圧が閾値を満たさないことに基づいて前記書き込み電流を阻止する手段をさらに備える、請求項18に記載の装置。
- 第2の電圧が閾値を満たさないことに基づいて読み出し電流を阻止する手段をさらに備え、前記読み出し電流を阻止する手段は、前記書き込み電流を阻止する手段から物理的に分離される、請求項19に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US15/692,920 | 2017-08-31 | ||
US15/692,920 US10134457B1 (en) | 2017-08-31 | 2017-08-31 | Cross-point spin accumulation torque MRAM |
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JP2019075533A true JP2019075533A (ja) | 2019-05-16 |
JP2019075533A5 JP2019075533A5 (ja) | 2019-08-15 |
JP6799566B2 JP6799566B2 (ja) | 2020-12-16 |
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US (1) | US10134457B1 (ja) |
JP (1) | JP6799566B2 (ja) |
CN (1) | CN109427381B (ja) |
DE (1) | DE102018115209A1 (ja) |
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WO2017090728A1 (ja) * | 2015-11-27 | 2017-06-01 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ |
US10411069B1 (en) * | 2018-02-17 | 2019-09-10 | GlobalFoundries, Inc. | Integrated circuits including magnetic random access memory structures and methods for fabricating the same |
US10522590B2 (en) * | 2018-03-14 | 2019-12-31 | Avalanche Technology, Inc. | Magnetic memory incorporating dual selectors |
US10930843B2 (en) * | 2018-12-17 | 2021-02-23 | Spin Memory, Inc. | Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory |
WO2020172891A1 (zh) * | 2019-02-28 | 2020-09-03 | 华为技术有限公司 | 存储器和存取方法 |
CN111640769B (zh) * | 2019-03-01 | 2023-04-18 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
US10891999B1 (en) | 2019-06-19 | 2021-01-12 | Western Digital Technologies, Inc. | Perpendicular SOT MRAM |
CN112151089B (zh) * | 2019-06-28 | 2022-09-30 | 中电海康集团有限公司 | 存储器 |
US11211426B2 (en) * | 2019-10-01 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel junction selector MRAM |
US11502241B2 (en) * | 2019-12-31 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic device and magnetic random access memory |
CN113451505B (zh) * | 2021-02-25 | 2023-07-07 | 北京航空航天大学 | 磁性随机存储单元、存储器及设备 |
US11961544B2 (en) | 2021-05-27 | 2024-04-16 | International Business Machines Corporation | Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line |
US20230066107A1 (en) * | 2021-08-26 | 2023-03-02 | International Business Machines Corporation | Ai accelerator with integrated pcm and mram |
US11869561B2 (en) | 2021-09-23 | 2024-01-09 | International Business Machines Corporation | Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ) |
US11823723B2 (en) | 2021-11-22 | 2023-11-21 | International Business Machines Corporation | Memory device with spin-harvesting structure |
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US9230626B2 (en) | 2012-08-06 | 2016-01-05 | Cornell University | Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications |
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