JP2019044022A - 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 - Google Patents
有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 Download PDFInfo
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Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G16/00—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00
- C08G16/02—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes
- C08G16/0212—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes with acyclic or carbocyclic organic compounds
- C08G16/0218—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes with acyclic or carbocyclic organic compounds containing atoms other than carbon and hydrogen
- C08G16/0231—Condensation polymers of aldehydes or ketones with monomers not provided for in the groups C08G4/00 - C08G14/00 of aldehydes with acyclic or carbocyclic organic compounds containing atoms other than carbon and hydrogen containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
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Abstract
Description
有機膜を形成するための組成物であって、(A)下記一般式(1)で示される繰り返し単位を有する重合体及び(B)有機溶剤を含有するものである有機膜形成用組成物を提供する。
本発明の重合体は、下記一般式(1)で示される繰り返し単位を有する。
本発明の重合体を得る手段としては、下記で示される窒素含有化合物とアルデヒド又はケトンとの重縮合反応によって得ることができる。下記式中のAR1、AR2、Y、Z、n、R1、及びR2は先述の通りである。
更に、重合体は、下記に示す窒素含有化合物とアルデヒド化合物又はケトン化合物を、前述の重合体の製造方法と同様に重縮合により中間体を得た後(Step1)、窒素上の水素原子をYに変換する(Step2)方法でも得ることも可能である。
また、本発明では、有機膜形成用の組成物であって、(A)成分として、前記一般式(1)で示される繰り返し単位を有する重合体、及び(B)成分として有機溶剤を含有する有機膜形成用組成物を提供する。
本発明の有機膜形成用組成物の(A)成分としては、上述の本発明の重合体と同様の物を用いることができる。なお、本発明の有機膜形成用組成物において、(A)成分は、上記で説明した本発明の重合体を、1種を単独で、又は2種以上を組み合わせて用いることができる。(A)成分は、本発明の有機膜形成用組成物のベースポリマーである。
本発明の有機膜形成方法に用いる有機膜形成用組成物において使用可能な有機溶剤としては、(A)成分、後述の酸発生剤、架橋剤、その他添加剤等が溶解するものであれば特に制限はない。沸点が180℃未満の溶剤が好ましく、具体的には、2−ヘプタノン、シクロペンタノン、シクロヘキサノン、メチル−2−アミルケトン等のケトン類;3−メトキシブタノール、3−メチル−3−メトキシブタノール、1−メトキシ−2−プロパノール、1−エトキシ−2−プロパノール等のアルコール類;プロピレングリコールモノメチルエーテル、エチレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、エチレングリコールモノエチルエーテル、プロピレングリコールジメチルエーテル、ジエチレングリコールジメチルエーテル等のエーテル類;プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、乳酸エチル、ピルビン酸エチル、酢酸ブチル、3−メトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、酢酸tert−ブチル、プロピオン酸tert−ブチル、プロピレングリコールモノtert−ブチルエーテルアセテート等のエステル類等が挙げられ、これらを1種又は2種以上を混合して使用できるが、これらに限定されるものではない。中でも、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテル、2−ヘプタノン、シクロペンタノン、シクロヘキサノン及びこれらのうち2種以上の混合物が好ましく用いられる。
本発明の有機膜形成用組成物においては、硬化反応を更に促進させるために(C)酸発生剤を添加することができる。酸発生剤は熱分解によって酸を発生するものや、光照射によって酸を発生するものがあるが、いずれのものも添加することができる。(C)成分としては、例えば、オニウム塩、ジアゾメタン誘導体、グリオキシム誘導体、ビススルホン誘導体、N−ヒドロキシイミド化合物のスルホン酸エステル、β−ケトスルホン酸誘導体、ジスルホン誘導体、ニトロベンジルスルホネート誘導体、スルホン酸エステル誘導体等が挙げられ、具体的には、特開2007−199653号公報中の(0061)〜(0085)段落に記載されている酸発生剤を添加することができるが、これらに限定されない。
本発明の有機膜形成用組成物には、スピンコーティングにおける塗布性を向上させるために(D)界面活性剤を添加することができる。界面活性剤としては、例えば、ポリオキシエチレンアルキルエーテル類、ポリオキシエチレンアルキルアリルエーテル類、ポリオキシエチレンポリオキシプロピレンブロックコポリマー類、ソルビタン脂肪酸エステル類、ノニオン系界面活性剤、フッ素系界面活性剤等が挙げられ、具体的には、特開2009−269953号公報中の(0142)〜(0147)記載のものを用いることができるが、これらに限定されない。
また、本発明の有機膜形成用組成物には、硬化性を高め、上層膜とのインターミキシングを更に抑制するために、(E)架橋剤を添加することもできる。架橋剤としては、特に限定されることはなく、公知の種々の系統の架橋剤を広く用いることができる。一例として、メラミン系架橋剤、グリコールウリル系架橋剤、ベンゾグアナミン系架橋剤、ウレア系架橋剤、β−ヒドロキシアルキルアミド系架橋剤、イソシアヌレート系架橋剤、アジリジン系架橋剤、オキサゾリン系架橋剤、エポキシ系架橋剤を例示できる。
また、本発明の有機膜形成用組成物には、平坦化/埋め込み特性を更に向上させるために、(F)可塑剤を添加することができる。可塑剤としては、特に限定されることはなく、公知の種々の系統の可塑剤を広く用いることができる。一例として、フタル酸エステル類、アジピン酸エステル類、リン酸エステル類、トリメリット酸エステル類、クエン酸エステル類等の低分子化合物、ポリエーテル系、ポリエステル系、特開2013−253227記載のポリアセタール系重合体等のポリマーを例示できる。
また、本発明の有機膜形成用組成物には、上述した(A)〜(F)成分以外の成分も、必要に応じて配合することができる。
また、本発明では、基板上に、前述の有機膜形成用組成物が硬化した有機膜が形成されたものである半導体装置製造用基板を提供する。
また、本発明では、半導体装置の製造工程で適用される有機膜の形成方法であって、被加工基板上に上述の本発明の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物が塗布された被加工体を不活性ガス雰囲気下で50℃以上600℃以下の温度で5秒〜7200秒の範囲で熱処理して硬化膜を得る有機膜の形成方法を提供する。
[ケイ素含有レジスト中間膜を用いた3層レジスト法]
本発明では、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト中間膜材料を用いてレジスト中間膜を形成し、該レジスト中間膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたレジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の本発明の有機膜形成用組成物を用いた3層レジスト法によるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の本発明の有機膜形成用組成物を用いた4層レジスト法によるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
有機膜形成用組成物用化合物(A1)〜(A28)の合成には下記に示す化合物群P:(P1)〜(P14)、化合物群Q:(Q1)〜(Q5)を用いた。
(A1):Mw=2300、Mw/Mn=2.45
表1に示される化合物群P、化合物群Qを用いた以外は、合成例1と同じ反応条件で、表1に示されるような化合物(A2)〜(A28)を生成物として得た。これらの化合物の重量平均分子量(Mw)及び分散度(Mw/Mn)を求め、表2〜4に示した。
(A29):Mw=4200、Mw/Mn=2.75
(A30):Mw=3700、Mw/Mn=2.82
合成例で合成した化合物(A1)〜(A30)、添加剤として架橋剤(CR1)、酸発生剤(AG1)、高沸点溶剤として(S1)1,6−ジアセトキシヘキサン:沸点260℃又は(S2)トリプロピレングリコールモノメチルエーテル:沸点242℃をプロピレングリコールモノメチルエーテルアセテート(PGMEA)、FC−4430(住友スリーエム(株)製)0.1質量%を含む溶媒中に表5に示す割合で溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)をそれぞれ調製した。
上記で調製した有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)をシリコン基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下400℃で60秒間焼成した後、膜厚を測定し、その上にPGMEA溶媒をディスペンスし、30秒間放置しスピンドライ、100℃で60秒間ベークしてPGMEAを蒸発させ、膜厚を測定しPGMEA処理前後の膜厚差を求めた。これらの結果を表6に示す。
上記で調製した有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)をそれぞれシリコン基板上に塗布し、大気中、180℃で焼成して300nmの塗布膜を形成し、膜厚を測定した。この基板を更に酸素濃度が0.2%以下に管理された窒素気流下450℃で焼成して膜厚を測定した(実施例2−1〜2−27、比較例2−1〜2−16)。更に有機膜形成用組成物(比較UDL−1、3、5、7、9、11、13)を用いて、上記と同様に大気中180℃で焼成まで行った後、大気中450℃で焼成して膜厚を測定した(比較例2−17〜2−23)。これらの結果を表7、8に示す。
図3のように、上記で調製した有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)をそれぞれ、密集ホールパターン(ホール直径0.16μm、ホール深さ0.50μm、隣り合う二つのホールの中心間の距離0.32μm)を有するSiO2ウエハー基板上に塗布し、ホットプレートを用いて酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間焼成し、有機膜8を形成した。使用した基板は図3(G)(俯瞰図)及び(H)(断面図)に示すような密集ホールパターンを有する下地基板7(SiO2ウエハー基板)である。得られた各ウエハー基板の断面形状を、走査型電子顕微鏡(SEM)を用いて観察し、ホール内部にボイド(空隙)なく、有機膜で充填されているかどうかを確認した。結果を表9に示す。埋め込み特性に劣る有機膜形成用組成物を用いた場合は、本評価において、ホール内部にボイドが発生する。埋め込み特性が良好な有機膜形成用組成物を用いた場合は、本評価において、図3(I)に示されるようにホール内部にボイドなく有機膜が充填される。
上記で調製した有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)をそれぞれ、巨大孤立トレンチパターン(図4(J)、トレンチ幅10μm、トレンチ深さ0.50μm)を有する下地基板9(SiO2ウエハー基板)上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒間焼成した後、トレンチ部分と非トレンチ部分の有機膜10の段差(図4(K)中のdelta10)を、パークシステムズ社製NX10原子間力顕微鏡(AFM)を用いて観察した。結果を表10に示す。本評価において、段差が小さいほど、平坦化特性が良好であるといえる。なお、本評価では、深さ0.10μmのトレンチパターンを、通常膜厚約0.2μmの有機膜形成用組成物を用いて平坦化しており、これは平坦化特性の優劣を評価するための特殊な厳しい評価条件である。
上記で調製した有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)を、それぞれ、300nmのSiO2膜が形成されているシリコンウエハー基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒焼成し、有機膜(レジスト下層膜)を形成した。その上にCVD−SiONハードマスクを形成し、更に有機反射防止膜材料(ARC−29A:日産化学社製)を塗布して210℃で60秒間ベークして膜厚80nmの有機反射防止膜を形成し、その上にレジスト上層膜材料のArF用単層レジストを塗布し、105℃で60秒間ベークして膜厚100nmのフォトレジスト膜を形成した。フォトレジスト膜上に液浸保護膜材料(TC−1)を塗布し90℃で60秒間ベークし膜厚50nmの保護膜を形成した。
チャンバー圧力:10.0Pa
RFパワー: 1,500W
CF4ガス流量:75sccm
O2ガス流量: 15sccm
時間: 15sec
チャンバー圧力:2.0Pa
RFパワー: 500W
Arガス流量: 75sccm
O2ガス流量: 45sccm
時間: 120sec
チャンバー圧力: 2.0Pa
RFパワー: 2,200W
C5F12ガス流量:20sccm
C2F6ガス流量: 10sccm
Arガス流量: 300sccm
O2ガス流量: 60sccm
時間: 90sec
上記で調製した有機膜形成用組成物(UDL−1〜27、比較UDL−1〜16)を、それぞれ、トレンチパターン(トレンチ幅10μm、トレンチ深さ0.10μm)を有するSiO2ウエハー基板上に塗布し、酸素濃度が0.2%以下に管理された窒素気流下450℃で60秒焼成した以外は、実施例5と同じ方法で塗布膜を形成し、パターニング、ドライエッチングを行ない、出来上がったパターンの形状を観察した。これらの結果を表14に示す。
3…有機膜、 3’…有機膜形成用組成物、 3a…有機膜パターン、
4…ケイ素含有レジスト中間膜、 4a…ケイ素含有レジスト中間膜パターン、
5…レジスト上層膜、 5a…レジスト上層膜パターン、 6…露光部分、
7…密集ホールパターンを有する下地基板、 8…有機膜、
9…巨大孤立トレンチパターンを有する下地基板、 10…有機膜、
delta10…トレンチ部分と非トレンチ部分の有機膜の膜厚の差。
Claims (18)
- 有機膜を形成するための組成物であって、(A)下記一般式(1)で示される繰り返し単位を有する重合体及び(B)有機溶剤を含有するものであることを特徴とする有機膜形成用組成物。
- 前記(A)成分が、重量平均分子量500〜20,000のものであることを特徴とする請求項1に記載の有機膜形成用組成物。
- 前記有機膜形成用組成物が、更に(C)酸発生剤、(D)界面活性剤、(E)架橋剤、及び(F)可塑剤のうち1種以上を含有するものであることを特徴とする請求項1又は請求項2に記載の有機膜形成用組成物。
- 基板上に、請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物が硬化した有機膜が形成されたものであることを特徴とする半導体装置製造用基板。
- 半導体装置の製造工程で適用される有機膜の形成方法であって、被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物が塗布された被加工体を不活性ガス雰囲気下で50℃以上600℃以下の温度で5秒〜7200秒の範囲で熱処理して硬化膜を得ることを特徴とする有機膜の形成方法。
- 半導体装置の製造工程で適用される有機膜の形成方法であって、被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物が塗布された被加工体を空気中で50℃以上300℃以下の温度で5秒〜600秒の範囲で熱処理して塗布膜形成し、続いて該塗布膜が形成された被加工体を不活性ガス雰囲気下で200℃以上600℃以下の温度で10秒〜7200秒の範囲で熱処理して硬化膜を得ることを特徴とする有機膜の形成方法。
- 前記不活性ガスとして、酸素濃度が1%以下のものを用いることを特徴とする請求項5又は請求項6に記載の有機膜の形成方法。
- 前記被加工体として、高さ30nm以上の構造体又は段差を有する被加工体を用いることを特徴とする請求項5から請求項7のいずれか一項に記載の有機膜の形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素含有レジスト中間膜材料を用いてケイ素含有レジスト中間膜を形成し、該ケイ素含有レジスト中間膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成して4層膜構造とし、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記ケイ素含有レジスト中間膜にエッチングでパターンを転写し、該パターンが転写されたケイ素含有レジスト中間膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体をエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが形成された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが形成された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項1から請求項3のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、ケイ素酸化窒化膜、チタン酸化膜、及びチタン窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成して4層膜構造とし、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが形成された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが形成された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 前記無機ハードマスクの形成を、CVD法又はALD法によって行うことを特徴とする請求項11又は請求項12に記載のパターン形成方法。
- 前記回路パターンの形成において、波長が10nm以上300nm以下の光を用いたリソグラフィー、電子線による直接描画、ナノインプリンティング、又はこれらの組み合わせによって回路パターンを形成することを特徴とする請求項9から請求項13のいずれか一項に記載のパターン形成方法。
- 前記回路パターンの形成において、アルカリ現像又は有機溶剤によって回路パターンを現像することを特徴とする請求項9から請求項14のいずれか一項に記載のパターン形成方法。
- 前記被加工体が、半導体装置基板、又は該半導体装置基板上に金属膜、金属炭化膜、金属酸化膜、金属窒化膜、金属酸化炭化膜、及び金属酸化窒化膜のいずれかが成膜されたものであることを特徴とする請求項9から請求項15のいずれか一項に記載のパターン形成方法。
- 前記被加工体を構成する金属が、ケイ素、チタン、タングステン、ハフニウム、ジルコニウム、クロム、ゲルマニウム、銅、銀、金、アルミニウム、インジウム、ガリウム、ヒ素、パラジウム、鉄、タンタル、イリジウム、モリブデン、又はこれらの合金であることを特徴とする請求項16に記載のパターン形成方法。
- 下記一般式(1)で示される繰り返し単位を有するものであることを特徴とする重合体。
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JP2017166240A JP6940335B2 (ja) | 2017-08-30 | 2017-08-30 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
US16/044,567 US11181821B2 (en) | 2017-08-30 | 2018-07-25 | Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer |
TW107129711A TWI675880B (zh) | 2017-08-30 | 2018-08-27 | 有機膜形成用組成物、半導體裝置製造用基板、有機膜之形成方法、圖案形成方法及聚合物 |
CN201810985309.9A CN109426077B (zh) | 2017-08-30 | 2018-08-28 | 有机膜形成用组合物、半导体装置制造用基板、有机膜的形成方法、图案形成方法及聚合物 |
KR1020180101083A KR102107307B1 (ko) | 2017-08-30 | 2018-08-28 | 유기막 형성용 조성물, 반도체 장치 제조용 기판, 유기막의 형성 방법, 패턴 형성 방법 및 중합체 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012215842A (ja) * | 2011-03-31 | 2012-11-08 | Jsr Corp | レジスト下層膜形成用組成物及びパターン形成方法 |
WO2013047516A1 (ja) * | 2011-09-29 | 2013-04-04 | 日産化学工業株式会社 | ジアリールアミンノボラック樹脂 |
WO2016021594A1 (ja) * | 2014-08-08 | 2016-02-11 | 日産化学工業株式会社 | 芳香族メチロール化合物が反応したノボラック樹脂を含むレジスト下層膜形成組成物 |
JP2016044272A (ja) * | 2014-08-25 | 2016-04-04 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
JP2016206676A (ja) * | 2015-04-24 | 2016-12-08 | Jsr株式会社 | レジスト下層膜形成方法及びパターン形成方法 |
JP2017021329A (ja) * | 2015-07-13 | 2017-01-26 | 信越化学工業株式会社 | レジスト下層膜形成用組成物及びこれを用いたパターン形成方法 |
JP2017082205A (ja) * | 2015-10-23 | 2017-05-18 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | 重合体、有機膜組成物、およびパターン形成方法 |
JP2017119671A (ja) * | 2015-12-24 | 2017-07-06 | 信越化学工業株式会社 | 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5705232A (en) | 1994-09-20 | 1998-01-06 | Texas Instruments Incorporated | In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing |
US5607773A (en) | 1994-12-20 | 1997-03-04 | Texas Instruments Incorporated | Method of forming a multilevel dielectric |
US5804259A (en) | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US5855962A (en) | 1997-01-09 | 1999-01-05 | International Business Machines Corporation | Flowable spin-on insulator |
JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
JP4382750B2 (ja) | 2003-01-24 | 2009-12-16 | 東京エレクトロン株式会社 | 被処理基板上にシリコン窒化膜を形成するcvd方法 |
JP4355943B2 (ja) | 2003-10-03 | 2009-11-04 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4662052B2 (ja) | 2005-03-11 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4575214B2 (ja) | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
JP4659678B2 (ja) | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
WO2008062932A1 (en) | 2006-11-22 | 2008-05-29 | Gwangju Institute Of Science And Technology | Sulfonated poly(arylene ether) containing crosslinkable moity at end group, method of manufacturing the same, and polymer electrolyte membrane using the sulfonated poly(arylene ether) and the method |
JP4569786B2 (ja) | 2008-05-01 | 2010-10-27 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP5336306B2 (ja) | 2008-10-20 | 2013-11-06 | 信越化学工業株式会社 | レジスト下層膜形成方法、これを用いたパターン形成方法、及びレジスト下層膜材料 |
JP5195478B2 (ja) | 2009-02-05 | 2013-05-08 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜、レジスト下層膜の形成方法、及びパターン形成方法 |
CN102803324B (zh) | 2009-06-19 | 2015-09-16 | 日产化学工业株式会社 | 咔唑酚醛清漆树脂 |
EP2650729A4 (en) | 2010-12-09 | 2014-07-16 | Nissan Chemical Ind Ltd | COMPOSITION FOR FORMING LACQUER COATING WITH A CARBAZOLE NOVOLAC HYDROXYL GROUP-CONTAINING RESIN |
KR101913101B1 (ko) | 2011-07-07 | 2018-10-31 | 닛산 가가쿠 가부시키가이샤 | 지환식 골격 함유 카바졸 수지를 포함하는 레지스트 하층막 형성 조성물 |
JP6137486B2 (ja) | 2012-02-01 | 2017-05-31 | 日産化学工業株式会社 | 複素環を含む共重合樹脂を含むレジスト下層膜形成組成物 |
JP5925721B2 (ja) | 2012-05-08 | 2016-05-25 | 信越化学工業株式会社 | 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法 |
JP5894106B2 (ja) | 2012-06-18 | 2016-03-23 | 信越化学工業株式会社 | レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法 |
KR102222665B1 (ko) | 2013-06-24 | 2021-03-05 | 제이에스알 가부시끼가이샤 | 막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 패턴 형성 방법 및 화합물 |
KR102327785B1 (ko) | 2013-12-26 | 2021-11-17 | 닛산 가가쿠 가부시키가이샤 | 제2 아미노기를 갖는 노볼락폴리머를 포함하는 레지스트 하층막 형성 조성물 |
JP6264246B2 (ja) | 2014-09-19 | 2018-01-24 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
KR102316585B1 (ko) | 2015-03-10 | 2021-10-26 | 삼성전자주식회사 | 하드마스크용 중합체, 상기 중합체를 포함하는 하드마스크용 조성물, 및 이를 이용한 반도체 소자의 패턴 형성 방법 |
JP6372887B2 (ja) | 2015-05-14 | 2018-08-15 | 信越化学工業株式会社 | 有機膜材料、有機膜形成方法、パターン形成方法、及び化合物 |
WO2017094780A1 (ja) | 2015-12-01 | 2017-06-08 | 日産化学工業株式会社 | インドロカルバゾールノボラック樹脂を含むレジスト下層膜形成組成物 |
JP6718406B2 (ja) | 2017-03-31 | 2020-07-08 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
JP6853716B2 (ja) | 2017-03-31 | 2021-03-31 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
JP6726142B2 (ja) * | 2017-08-28 | 2020-07-22 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
-
2017
- 2017-08-30 JP JP2017166240A patent/JP6940335B2/ja active Active
-
2018
- 2018-07-25 US US16/044,567 patent/US11181821B2/en active Active
- 2018-08-27 TW TW107129711A patent/TWI675880B/zh active
- 2018-08-28 KR KR1020180101083A patent/KR102107307B1/ko active IP Right Grant
- 2018-08-28 CN CN201810985309.9A patent/CN109426077B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012215842A (ja) * | 2011-03-31 | 2012-11-08 | Jsr Corp | レジスト下層膜形成用組成物及びパターン形成方法 |
WO2013047516A1 (ja) * | 2011-09-29 | 2013-04-04 | 日産化学工業株式会社 | ジアリールアミンノボラック樹脂 |
WO2016021594A1 (ja) * | 2014-08-08 | 2016-02-11 | 日産化学工業株式会社 | 芳香族メチロール化合物が反応したノボラック樹脂を含むレジスト下層膜形成組成物 |
JP2016044272A (ja) * | 2014-08-25 | 2016-04-04 | Jsr株式会社 | 膜形成用組成物、膜、パターンが形成された基板の製造方法及び化合物 |
JP2016206676A (ja) * | 2015-04-24 | 2016-12-08 | Jsr株式会社 | レジスト下層膜形成方法及びパターン形成方法 |
JP2017021329A (ja) * | 2015-07-13 | 2017-01-26 | 信越化学工業株式会社 | レジスト下層膜形成用組成物及びこれを用いたパターン形成方法 |
JP2017082205A (ja) * | 2015-10-23 | 2017-05-18 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | 重合体、有機膜組成物、およびパターン形成方法 |
JP2017119671A (ja) * | 2015-12-24 | 2017-07-06 | 信越化学工業株式会社 | 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法 |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7103993B2 (ja) | 2019-05-16 | 2022-07-20 | 信越化学工業株式会社 | 有機膜形成用組成物、パターン形成方法及び重合体 |
JP2020186339A (ja) * | 2019-05-16 | 2020-11-19 | 信越化学工業株式会社 | 有機膜形成用組成物、パターン形成方法及び重合体 |
CN112034681A (zh) * | 2019-06-04 | 2020-12-04 | 信越化学工业株式会社 | 有机膜形成用组成物、图案形成方法、以及聚合物 |
JP2020196830A (ja) * | 2019-06-04 | 2020-12-10 | 信越化学工業株式会社 | 有機膜形成用組成物、パターン形成方法及び重合体 |
JP7209588B2 (ja) | 2019-06-04 | 2023-01-20 | 信越化学工業株式会社 | 有機膜形成用組成物、パターン形成方法及び重合体 |
JP2021012266A (ja) * | 2019-07-05 | 2021-02-04 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
JP2022126681A (ja) * | 2019-07-05 | 2022-08-30 | 信越化学工業株式会社 | 重合体 |
JP7406590B2 (ja) | 2019-07-05 | 2023-12-27 | 信越化学工業株式会社 | 重合体 |
JP7161451B2 (ja) | 2019-07-05 | 2022-10-26 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、及びパターン形成方法 |
US11635691B2 (en) | 2019-07-05 | 2023-04-25 | Shin-Etsu Chemical Co., Ltd. | Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and polymer |
JP2021138851A (ja) * | 2020-03-05 | 2021-09-16 | 信越化学工業株式会社 | 塗布型有機膜形成用組成物、パターン形成方法、重合体および重合体の製造方法 |
JP7465679B2 (ja) | 2020-03-05 | 2024-04-11 | 信越化学工業株式会社 | 塗布型有機膜形成用組成物、パターン形成方法、重合体および重合体の製造方法 |
KR20220029390A (ko) * | 2020-08-31 | 2022-03-08 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 하층 조성물 및 패턴화 방법 |
KR102584764B1 (ko) | 2020-08-31 | 2023-10-05 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 하층 조성물 및 패턴화 방법 |
WO2022196495A1 (ja) * | 2021-03-17 | 2022-09-22 | 日産化学株式会社 | レジスト下層膜形成組成物 |
KR20230158070A (ko) | 2021-03-17 | 2023-11-17 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
WO2023149553A1 (ja) * | 2022-02-03 | 2023-08-10 | 日産化学株式会社 | 焼成物の硬度の向上方法 |
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WO2023189799A1 (ja) * | 2022-03-28 | 2023-10-05 | 日産化学株式会社 | 自己架橋性ポリマー及びレジスト下層膜形成組成物 |
EP4276535A1 (en) | 2022-05-10 | 2023-11-15 | Shin-Etsu Chemical Co., Ltd. | Composition for forming metal oxide film, patterning process, and method for forming metal oxide film |
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JP6940335B2 (ja) | 2021-09-29 |
KR20190024779A (ko) | 2019-03-08 |
CN109426077A (zh) | 2019-03-05 |
CN109426077B (zh) | 2022-06-28 |
TW201920446A (zh) | 2019-06-01 |
US11181821B2 (en) | 2021-11-23 |
KR102107307B1 (ko) | 2020-05-06 |
TWI675880B (zh) | 2019-11-01 |
US20190064659A1 (en) | 2019-02-28 |
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