JP2019029667A - Substrate processing apparatus, substrate processing method, photomask cleaning method, and photomask manufacturing method - Google Patents
Substrate processing apparatus, substrate processing method, photomask cleaning method, and photomask manufacturing method Download PDFInfo
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- JP2019029667A JP2019029667A JP2018138346A JP2018138346A JP2019029667A JP 2019029667 A JP2019029667 A JP 2019029667A JP 2018138346 A JP2018138346 A JP 2018138346A JP 2018138346 A JP2018138346 A JP 2018138346A JP 2019029667 A JP2019029667 A JP 2019029667A
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- 239000000758 substrate Substances 0.000 title claims abstract description 475
- 238000012545 processing Methods 0.000 title claims abstract description 133
- 238000004140 cleaning Methods 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000003672 processing method Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims abstract description 91
- 239000007788 liquid Substances 0.000 claims abstract description 89
- 238000000926 separation method Methods 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 42
- 238000005201 scrubbing Methods 0.000 description 37
- 238000012546 transfer Methods 0.000 description 14
- 238000011109 contamination Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
本発明は、基板処理に関し、特に、フォトマスク基板の洗浄処理に有利に用いられる、基板処理装置、基板処理方法、フォトマスク洗浄方法、及びフォトマスク製造方法に関する。 The present invention relates to substrate processing, and more particularly to a substrate processing apparatus, a substrate processing method, a photomask cleaning method, and a photomask manufacturing method, which are advantageously used for cleaning processing of a photomask substrate.
ＬＳＩ（大規模集積回路）用フォトマスクやＦＰＤ（フラットパネルディスプレイ）用フォトマスクでは、製造工程中やハンドリングによって発生した異物が、フォトマスクの転写用パターンの領域などに付着することにより、転写不良をきたす。このため、フォトマスクの製造過程や製造後に精密な洗浄を施す必要がある。 In LSI (Large Scale Integrated Circuit) photomasks and FPD (Flat Panel Display) photomasks, foreign matter generated during the manufacturing process or by handling adheres to the transfer pattern area of the photomask, resulting in poor transfer. Bring For this reason, it is necessary to perform precise cleaning after the photomask manufacturing process or after manufacturing.
特許文献１には、異なる複数サイズのフォトマスクに用いられるスピン洗浄装置が記載されている。このスピン洗浄装置は、投入されたフォトマスク基板のサイズ情報を読み取る手段と、読み取った基板サイズ情報に基づいて、所定の制御を行なう制御部を有している。また、このスピン洗浄装置は、第一洗浄槽と第二洗浄槽との間に基板反転手段を備えており、上記基板サイズ情報を基に基板反転手段の挟持アーム用駆動部を制御してフォトマスク基板を挟持することにより、フォトマスク基板を反転する構成になっている。 Patent Document 1 describes a spin cleaning apparatus used for photomasks of different sizes. This spin cleaning apparatus has means for reading the size information of the input photomask substrate and a control unit for performing predetermined control based on the read substrate size information. Further, the spin cleaning apparatus includes a substrate reversing unit between the first cleaning tank and the second cleaning tank, and controls the nipping arm driving unit of the substrate reversing unit based on the substrate size information. The photomask substrate is inverted by sandwiching the mask substrate.
特許文献２には、フォトマスク用ガラス基板などの基板の表面と裏面にそれぞれ異なる処理液を供給して基板を処理する、基板処理装置が記載されている。この基板処理装置は、基板の主面を水平にして搬送しつつ、基板の表面に第１の処理液、基板の裏面に第２の処理液を供給することにより、基板の表面と裏面を処理する。この基板処理装置は、基板の表面への裏面用の洗浄液の回り込みを防止しつつ、基板の裏面を適切に処理することが可能な基板処理装置とされている。 Patent Document 2 describes a substrate processing apparatus that processes substrates by supplying different processing liquids to the front and back surfaces of a substrate such as a photomask glass substrate. The substrate processing apparatus processes the front and back surfaces of the substrate by supplying the first processing liquid to the front surface of the substrate and the second processing liquid to the back surface of the substrate while transporting the main surface of the substrate horizontally. To do. This substrate processing apparatus is a substrate processing apparatus capable of appropriately processing the back surface of the substrate while preventing the back surface cleaning liquid from entering the surface of the substrate.
基板の表面を液剤で処理する方法として、スピン洗浄が知られている。スピン洗浄は、水平に保持した基板を処理カップ中で回転させつつ、基板の表面に処理液を供給して基板処理を行なう。このスピン洗浄によれば、水平に保持した基板の上向き面に、ブラシやスポンジ等のスクラブ材を接触させて基板を洗浄することができる。 Spin cleaning is known as a method for treating the surface of a substrate with a liquid agent. In the spin cleaning, the substrate is processed by supplying a processing liquid to the surface of the substrate while rotating the horizontally held substrate in the processing cup. According to this spin cleaning, the substrate can be cleaned by bringing a scrub material such as a brush or a sponge into contact with the upward surface of the substrate held horizontally.
一方、基板の下向き面は、基板を水平に載置するための保持部材（スピンチャック）に保持される。このため、基板の下向き面に、スクラブ材等による接触式の洗浄を適用するには不都合がある。したがって、基板の表面と裏面をそれぞれ接触式で洗浄する場合には、基板の上向き面を洗浄した後で、基板の反転を行なう必要がある。但し、基板の反転には、後述する技術的な課題が伴う。このため、特許文献１に記載のスピン洗浄装置では、基板の反転に伴う課題を考慮していない点で改善の余地がある。 On the other hand, the downward surface of the substrate is held by a holding member (spin chuck) for placing the substrate horizontally. For this reason, it is inconvenient to apply contact cleaning with a scrubbing material or the like on the downward surface of the substrate. Therefore, when the front surface and the back surface of the substrate are cleaned by the contact method, it is necessary to invert the substrate after cleaning the upward surface of the substrate. However, the reversal of the substrate involves technical problems described later. For this reason, the spin cleaning apparatus described in Patent Document 1 has room for improvement in that it does not consider the problems associated with substrate inversion.
特許文献２に記載の基板処理装置は、搬送ローラによって基板を搬送しつつ、基板の裏面（下向き面）に処理液を供給している。この基板処理装置では、基板を反転せずに裏面を処理している。但し、裏面の処理は、搬送ローラによって基板を搬送しつつ行なわれる。したがって、この基板処理装置を用いて基板の裏面を洗浄する場合には、基板と搬送ローラとの接触によって基板の裏面に汚染物が残留してしまう。 The substrate processing apparatus described in Patent Document 2 supplies the processing liquid to the back surface (downward surface) of the substrate while transporting the substrate by the transport roller. In this substrate processing apparatus, the back surface is processed without inverting the substrate. However, the back surface processing is performed while the substrate is transported by the transport roller. Therefore, when the back surface of the substrate is cleaned using this substrate processing apparatus, contaminants remain on the back surface of the substrate due to contact between the substrate and the transport roller.
現在、たとえばＦＰＤ用フォトマスク基板においては、コスト効率の観点から、基板の主面の面積を転写領域として最大限利用すべく、基板の外縁近くまでデバイスパターンを配置するニーズがある。これに伴い、基板の外縁近傍においても、欠陥や異物の存在が許容されず、これらが許容される幅が非常に狭くなっている。特許文献２に記載の基板処理装置では、基板の裏面に搬送ローラが接触し、その接触部分に汚染物が残留するため、基板の外縁近くまでデバイスパターンを配置するフォトマスクには、このような処理装置が適用できない点で課題を残す。 At present, for example, in the photomask substrate for FPD, from the viewpoint of cost efficiency, there is a need to arrange a device pattern as close as possible to the outer edge of the substrate in order to make maximum use of the area of the main surface of the substrate as a transfer region. As a result, the presence of defects and foreign matter is not allowed in the vicinity of the outer edge of the substrate, and the allowable width of these is very narrow. In the substrate processing apparatus described in Patent Document 2, since the conveyance roller contacts the back surface of the substrate and contaminants remain in the contact portion, such a photomask for arranging the device pattern near the outer edge of the substrate A problem remains in that the processing apparatus cannot be applied.
本発明の主な目的は、基板の下向き面の洗浄方法を改善することにより、異物等の付着による汚染を低減した基板を得ることができる技術を提供することにある。 A main object of the present invention is to provide a technique capable of obtaining a substrate in which contamination due to adhesion of foreign substances or the like is reduced by improving a method for cleaning a downward surface of the substrate.
（第１の態様）
本発明の第１の態様は、
基板の下向き面を処理液によって処理する基板処理装置であって、
前記基板の主面を水平にした状態で、前記基板を下向き面側から支承する支承部材と、
前記支承部材に支承された前記基板の外縁部の一部を、対向する２方向から挟んで前記基板を保持するクランプ部材と、
前記クランプ部材に保持された基板を前記支承部材から離間させるために、前記支承部材と前記クランプ部材の少なくとも一方を鉛直方向に移動させる駆動手段と、
前記離間により形成された空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させるスクラブ移動手段と、
前記基板の下向き面に処理液を供給する処理液供給手段と、
を有する、基板処理装置である。
（第２の態様）
本発明の第２の態様は、
前記クランプ部材の先端には、前記基板の主面と端面の間に形成されたコーナ面に接触可能な接触面が設けられている、上記第１の態様記載の基板処理装置である。
（第３の態様）
本発明の第３の態様は、
前記支承部材に支承された前記基板を水平面内で回転させる回転手段を有する、上記第１又は第２の態様に記載の基板処理装置である。
（第４の態様）
本発明の第４の態様は、
基板の下向き面を処理液によって処理する基板処理方法であって、
前記基板の四角形の主面を水平にした状態で、前記基板を下向き面側から支承部材で支承することにより、前記基板をセットする工程と、
前記基板の主面の相対向する二辺にある基板外縁部の一部を、それぞれクランプ保持する保持工程と、
前記クランプ保持された前記基板と前記支承部材の少なくとも一方を鉛直方向に移動させることにより、前記基板の下向き面と前記支承部材を離間する離間工程と、
前記下向き面に、前記処理液を供給するとともに、前記離間によって形成された空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させることにより、前記基板の下向き面を処理液によって処理する処理工程と、
を有する、基板処理方法である。
（第５の態様）
本発明の第５の態様は、
基板の下向き面を処理液によって処理する基板処理方法であって、
前記基板の四角形の主面を水平にした状態で、前記基板を下向き面側から支承部材で支承することにより、前記基板をセットする工程と、
前記基板の主面の相対向する二辺にある基板外縁部の一部を、それぞれクランプ保持する第１保持工程と、
前記クランプ保持された前記基板と前記支承部材の少なくとも一方を鉛直方向に移動させることにより、前記基板の下向き面と前記支承部材を離間する離間工程と、
前記下向き面に、前記処理液を供給するとともに、前記離間によって形成された空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させることにより、前記基板の下向き面を処理液によって処理する第１処理工程と、
前記二辺にある基板外縁部をクランプ保持から解放し、前記二辺と異なる二辺にある基板外縁部の一部を、それぞれクランプ保持する第２保持工程と、
前記下向き面に、前記処理液を供給するとともに、前記空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させることにより、前記基板の下向き面を処理液によって処理する第２処理工程と、
を有する、基板処理方法である。
（第６の態様）
本発明の第６の態様は、
前記第１処理工程の後で、かつ、前記第２保持工程の前に、前記基板を水平面上で所定角度回転させる回転工程を有する、上記第５の態様に記載の基板処理方法である。
（第７の態様）
本発明の第７の態様は、
前記所定角度は９０度である、上記第６の態様に記載の基板処理方法である。
（第８の態様）
前記回転工程は、前記支承部材により前記基板を支承して行なう、上記第６又は第７の態様に記載の基板処理方法である。
（第９の態様）
本発明の第９の態様は、
前記基板処理方法により、フォトマスク基板の裏面を洗浄する、上記第４〜第８の態様のいずれか１つに記載の基板処理方法である。
（第１０の態様）
本発明の第１０の態様は、
上記第４〜第９の態様のいずれか１つに記載の基板処理方法によりフォトマスク基板の裏面を洗浄する裏面洗浄工程と、
前記フォトマスク基板の膜面を上側にした状態で、前記フォトマスク基板の膜面を洗浄する膜面洗浄工程と、を有し、
前記裏面洗浄工程と前記膜面洗浄工程との間に、前記フォトマスク基板を上下反転させる工程を有しない、フォトマスク洗浄方法である。
（第１１の態様）
本発明の第１１の態様は、
上記第４〜第９の態様のいずれか１つに記載の基板処理方法を含む、フォトマスク製造方法である。
（第１２の態様）
本発明の第１２の態様は、
上記第１０の態様に記載のフォトマスク洗浄方法を含む、フォトマスク製造方法である。
(First aspect)
The first aspect of the present invention is:
A substrate processing apparatus for processing a downward surface of a substrate with a processing liquid,
With the main surface of the substrate horizontal, a support member for supporting the substrate from the downward surface side;
A clamp member for holding the substrate by sandwiching a part of the outer edge of the substrate supported by the support member from two opposing directions;
Drive means for moving at least one of the support member and the clamp member in a vertical direction to separate the substrate held by the clamp member from the support member;
A scrub moving means for moving the scrub material along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate within the space formed by the separation;
Treatment liquid supply means for supplying a treatment liquid to the downward surface of the substrate;
A substrate processing apparatus.
(Second aspect)
The second aspect of the present invention is:
The substrate processing apparatus according to the first aspect, wherein a contact surface capable of contacting a corner surface formed between a main surface and an end surface of the substrate is provided at a tip of the clamp member.
(Third aspect)
The third aspect of the present invention is:
The substrate processing apparatus according to the first or second aspect, further comprising a rotating unit that rotates the substrate supported by the support member in a horizontal plane.
(Fourth aspect)
The fourth aspect of the present invention is:
A substrate processing method for processing a downward surface of a substrate with a processing liquid,
A step of setting the substrate by supporting the substrate with a supporting member from a downward surface side in a state where the rectangular main surface of the substrate is horizontal;
A holding step of clamping and holding a part of the substrate outer edge portion on two opposite sides of the main surface of the substrate;
A separation step of separating the downward surface of the substrate and the support member by moving at least one of the substrate held by the clamp and the support member in a vertical direction;
The processing liquid is supplied to the downward surface, and the scrub material is moved along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate in the space formed by the separation. A processing step of processing the downward surface of the substrate with a processing liquid;
A substrate processing method.
(Fifth aspect)
According to a fifth aspect of the present invention,
A substrate processing method for processing a downward surface of a substrate with a processing liquid,
A step of setting the substrate by supporting the substrate with a supporting member from a downward surface side in a state where the rectangular main surface of the substrate is horizontal;
A first holding step of clamping and holding a part of the substrate outer edge portion on two opposite sides of the main surface of the substrate;
A separation step of separating the downward surface of the substrate and the support member by moving at least one of the substrate held by the clamp and the support member in a vertical direction;
The processing liquid is supplied to the downward surface, and the scrub material is moved along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate in the space formed by the separation. A first processing step of processing the downward surface of the substrate with a processing liquid;
A second holding step of releasing the substrate outer edge portion on the two sides from the clamp holding, and clamping and holding a part of the substrate outer edge portion on the two sides different from the two sides;
The substrate is provided by supplying the processing liquid to the downward surface and moving the scrub material along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate in the space. A second treatment step of treating the downward surface of the substrate with the treatment liquid;
A substrate processing method.
(Sixth aspect)
The sixth aspect of the present invention is:
The substrate processing method according to the fifth aspect, further including a rotating step of rotating the substrate by a predetermined angle on a horizontal plane after the first processing step and before the second holding step.
(Seventh aspect)
The seventh aspect of the present invention is
The substrate processing method according to the sixth aspect, wherein the predetermined angle is 90 degrees.
(Eighth aspect)
The rotation process is the substrate processing method according to the sixth or seventh aspect, wherein the substrate is supported by the support member.
(Ninth aspect)
The ninth aspect of the present invention provides
The substrate processing method according to any one of the fourth to eighth aspects, wherein the back surface of the photomask substrate is cleaned by the substrate processing method.
(Tenth aspect)
The tenth aspect of the present invention provides
A back surface cleaning step of cleaning the back surface of the photomask substrate by the substrate processing method according to any one of the fourth to ninth aspects;
A film surface cleaning step of cleaning the film surface of the photomask substrate with the film surface of the photomask substrate facing upward,
The photomask cleaning method does not include a step of inverting the photomask substrate between the back surface cleaning step and the film surface cleaning step.
(Eleventh aspect)
The eleventh aspect of the present invention is
It is a photomask manufacturing method containing the substrate processing method as described in any one of the said 4th-9th aspect.
(Twelfth aspect)
The twelfth aspect of the present invention provides
A photomask manufacturing method including the photomask cleaning method according to the tenth aspect.
本発明によれば、基板の下向き面の洗浄方法を改善することにより、異物等の付着による汚染を低減した基板を得ることができる。 According to the present invention, by improving the method of cleaning the downward surface of the substrate, it is possible to obtain a substrate with reduced contamination due to adhesion of foreign substances and the like.
本発明の実施形態において、基板処理の対象となる基板とは、たとえば、フォトマスク基板である。フォトマスク基板には、フォトマスクとするための透明基板（フォトマスク用ガラス基板等）のみならず、該透明基板の表面に所定の膜を成膜したフォトマスクブランクや、フォトマスクブランクにフォトレジストを塗布したレジスト付フォトマスクブランク、或いはフォトマスク製造過程のフォトマスク中間体や、完成したフォトマスクを含むものとする。以下の実施形態の説明においては、上記フォトマスク基板を基板と略称することがある。 In the embodiment of the present invention, the substrate to be subjected to substrate processing is, for example, a photomask substrate. The photomask substrate includes not only a transparent substrate (such as a glass substrate for a photomask) used as a photomask, but also a photomask blank in which a predetermined film is formed on the surface of the transparent substrate, and a photoresist on the photomask blank. It includes a photomask blank with a resist coated with a photomask, a photomask intermediate in the process of manufacturing a photomask, and a completed photomask. In the following description of the embodiments, the photomask substrate may be abbreviated as a substrate.
また、本発明の実施形態においては、フォトマスク基板が有する表裏２つの主面のうち、一方の主面を膜面、他方の主面を裏面とする。膜面とは、成膜及び転写用パターンの形成が行なわれる側の面をいう。裏面は多くの場合、フォトマスク基板の材料であるガラスの表面が露出した面となる。よって、本実施形態ではフォトマスク基板の裏面をガラス面ともいう。 In the embodiment of the present invention, of the two main surfaces of the photomask substrate, one main surface is a film surface and the other main surface is a back surface. The film surface is a surface on the side where film formation and transfer pattern formation are performed. In many cases, the back surface is a surface where the surface of the glass, which is the material of the photomask substrate, is exposed. Therefore, in this embodiment, the back surface of the photomask substrate is also referred to as a glass surface.
また、本発明の実施形態では、基板処理の過程で基板の主面を水平にしたとき、２つの主面のうち、鉛直方向の上側を向く面を上向き面、鉛直方向の下側を向く面を下向き面とする。 In the embodiment of the present invention, when the main surface of the substrate is leveled during the substrate processing, the surface facing the upper side in the vertical direction is the upper surface and the surface facing the lower side in the vertical direction, out of the two main surfaces. Is the downward surface.
＜スピン洗浄装置＞
図１は、参考例としてのスピン洗浄装置の構成例を示す側面概略図である。
図示したスピン洗浄装置５０は、平面視四角形のフォトマスク基板１を保持するホルダ５１と、ホルダ５１を収容可能なカップ５２と、ホルダ５１を回転させる回転軸５３と、回転軸５３を駆動する駆動部５４と、接触洗浄用のスクラブ材５５と、上側処理液供給ライン５６と、下側処理液供給ライン５７と、を備える。ホルダ５１には、フォトマスク基板１を下から受けて支えるピン５８と、フォトマスク基板１の四隅付近で端面を規制するチャック５９が設けられている。駆動部５４は、たとえば、モータ等の駆動源と、駆動源の駆動力を回転軸５３に伝達する駆動力伝達機構（プーリー、ベルト等）とによって構成される。スクラブ材５５は、たとえば、ブラシやスポンジなどを用いて構成される。
<Spin cleaning device>
FIG. 1 is a schematic side view showing a configuration example of a spin cleaning apparatus as a reference example.
The illustrated spin cleaning apparatus 50 includes a holder 51 that holds a photomask substrate 1 that is square in plan view, a cup 52 that can hold the holder 51, a rotating shaft 53 that rotates the holder 51, and a drive that drives the rotating shaft 53. A part 54, a scrubbing material 55 for contact cleaning, an upper processing liquid supply line 56, and a lower processing liquid supply line 57. The holder 51 is provided with pins 58 that receive and support the photomask substrate 1 from below, and chucks 59 that restrict the end surfaces near the four corners of the photomask substrate 1. The drive unit 54 includes, for example, a drive source such as a motor and a drive force transmission mechanism (pulley, belt, etc.) that transmits the drive force of the drive source to the rotating shaft 53. The scrub member 55 is configured using, for example, a brush or a sponge.
上記構成からなるスピン洗浄装置５０においては、ホルダ５１上にフォトマスク基板１を載置し、回転軸５３を中心にホルダ５１とフォトマスク基板１を高速回転させながら、フォトマスク基板１の上向き面に上側処理液供給ライン５６を通して処理液（洗浄液、リンス液を含む）を供給する。これにより、フォトマスク基板１の上向き面を処理液によって処理することができる。その際、必要に応じて、基板の下側から下側処理液供給ライン５７を通して処理液（洗浄液、リンス液を含む）を噴出させることにより、フォトマスク基板１の下向き面を処理液によって処理することができる。 In the spin cleaning apparatus 50 having the above-described configuration, the photomask substrate 1 is placed on the holder 51, and the upward surface of the photomask substrate 1 is rotated while the holder 51 and the photomask substrate 1 are rotated at high speed about the rotation shaft 53. A processing liquid (including a cleaning liquid and a rinsing liquid) is supplied through the upper processing liquid supply line 56. Thereby, the upward surface of the photomask substrate 1 can be processed with the processing liquid. At that time, if necessary, the lower surface of the photomask substrate 1 is processed with the processing liquid by ejecting the processing liquid (including the cleaning liquid and the rinsing liquid) from the lower side of the substrate through the lower processing liquid supply line 57. be able to.
上記図１に示す例では、フォトマスク基板１の上向き面が膜面となっており、この膜面に転写用パターン１ａが形成されている。フォトマスクを製造した後、フォトマスクを洗浄する場合は、フォトマスク基板１の膜面側に存在する異物を極力排除する必要がある。このため、スピン洗浄装置５０には、スクラブ材５５を用いた接触洗浄機構を取り付けることができる。接触洗浄機構は、スクラブ材５５を保持するアーム（不図示）の動作により、フォトマスク基板１の上向き面（膜面）と対向するようにスクラブ材５５を配置するとともに、フォトマスク基板１の上向き面にスクラブ材５５を接触させて洗浄する機構である。 In the example shown in FIG. 1, the upward surface of the photomask substrate 1 is a film surface, and the transfer pattern 1a is formed on the film surface. When the photomask is cleaned after the photomask is manufactured, it is necessary to eliminate foreign matter existing on the film surface side of the photomask substrate 1 as much as possible. For this reason, a contact cleaning mechanism using the scrub material 55 can be attached to the spin cleaning device 50. The contact cleaning mechanism arranges the scrubbing material 55 so as to face the upward surface (film surface) of the photomask substrate 1 by the operation of an arm (not shown) that holds the scrubbing material 55, and upwards the photomask substrate 1. The scrubbing material 55 is brought into contact with the surface for cleaning.
但し、フォトマスク基板１はホルダ５１上に載置されることで、その自重を支承されている。このため、フォトマスク基板１の下向き面側にはあまり空間がない。したがって、下側処理液供給ライン５７から噴出させた処理液を、ホルダ５１の隙間を通してフォトマスク基板１の下向き面に到達させて処理することは可能であるが、スクラブ材などを用いた接触洗浄を下向き面に適用することは極めて困難である。その理由は、フォトマスク基板１の下向き面をスクラブ材などによって、より積極的に異物を除去すべく接触洗浄しようとすると、スクラブ材を保持するアームなどがホルダ５１と干渉してしまうなどの不都合が生じるためである。 However, the photomask substrate 1 is supported on its own weight by being placed on the holder 51. For this reason, there is not much space on the downward surface side of the photomask substrate 1. Accordingly, it is possible to process the processing liquid ejected from the lower processing liquid supply line 57 by reaching the downward surface of the photomask substrate 1 through the gap of the holder 51, but contact cleaning using a scrub material or the like. Is extremely difficult to apply to the downward facing surface. The reason for this is that when the downward surface of the photomask substrate 1 is cleaned with a scrub material or the like in order to more actively remove foreign matter, the arm or the like that holds the scrub material interferes with the holder 51. This is because.
そこで、フォトマスク基板１の膜面及び裏面の両方を接触洗浄する方法としては、膜面を処理する前に、図２（ａ）に示すように、膜面を下向きにしてフォトマスク基板１をホルダ５１に載置し、そのときに上向き面となった裏面を上記スクラブ材５５によって洗浄する。その後、図２（ｂ）に示すように、フォトマスク基板１を上下反転させてホルダ５１に載置し、そのときに上向き面となった膜面を上記スクラブ材５５によって洗浄する。なお、フォトマスク基板１の表面及び裏面をそれぞれ接触洗浄する場合、先に膜面を洗浄してから裏面を洗浄することも可能であるが、最終的には膜面側の異物を可能なかぎり除去すべきであるため、膜面の処理は、最後に行なうことが有利である。 Therefore, as a method of contact cleaning both the film surface and the back surface of the photomask substrate 1, before processing the film surface, the photomask substrate 1 is placed with the film surface facing downward as shown in FIG. The back surface which is placed on the holder 51 and becomes an upward surface at that time is cleaned by the scrub material 55. Thereafter, as shown in FIG. 2B, the photomask substrate 1 is turned upside down and placed on the holder 51, and the film surface that has turned upward at that time is cleaned with the scrub material 55. In the case where the front surface and the back surface of the photomask substrate 1 are respectively contact cleaned, it is possible to clean the back surface after first cleaning the film surface. Since it should be removed, the film surface treatment is advantageously performed last.
但し、膜面の処理を最後に行なう場合であっても、その前に上向き面となった裏面を洗浄する際に、洗浄によって裏面から取り除かれる異物や、フォトマスク基板１の端面に存在する異物が、処理液と共に膜面側に回り込むことが、発明者によって見出された（図３）。すなわち上記の洗浄方法では、フォトマスク製造過程のハンドリングなどでフォトマスク基板１の裏面に付着した異物や、フォトマスク基板１の端面に付着した異物が、裏面を上向き面として洗浄する際に、図３の破線矢印で示すように膜面側に回り込む。特に、フォトマスク基板１の端面の粗さが主面に比べて粗い場合は、端面に多くの異物が潜在しているため、膜面側に異物が回り込む傾向が顕著になる。 However, even when the film surface processing is performed last, when cleaning the back surface that has turned upward before that, the foreign material removed from the back surface by cleaning or the foreign material existing on the end surface of the photomask substrate 1 Was found by the inventor to wrap around with the treatment liquid toward the membrane surface (FIG. 3). That is, in the above-described cleaning method, when foreign matters attached to the back surface of the photomask substrate 1 due to handling of the photomask manufacturing process or foreign materials attached to the end face of the photomask substrate 1 are cleaned with the back surface facing upward, As shown by the broken line arrow 3, it goes around the film surface side. In particular, when the roughness of the end face of the photomask substrate 1 is rougher than that of the main surface, a large amount of foreign matter is present on the end face.
なお、サイズが５０μｍ未満（例えば０．５〜５０μｍ程度）の異物を除去するための洗浄において、洗浄環境を十分に清浄にする。仮に洗浄装置の汚染や、スクラブ材の汚染、洗浄装置内に飛散した処理液の滴下や再付着の防止策が不十分であれば、１回の洗浄によって、異物の数を低減するどころか増加させることもあり得る。一方、洗浄環境を良好に整えることにより、所定の割合で、異物の数を減らすことができる。但し、仮に１回の洗浄で、たとえば異物を７０％程度除去できるとしても、１００％除去することは現実的にほぼ不可能である。したがって、基板の洗浄工程では、膜面に対する洗浄前の初期段階で異物の数を極力減らしておくことが肝要である。上述したように、まずフォトマスク基板１の裏面を洗浄し、その後、フォトマスク基板１の膜面を洗浄する場合は、最初に行なう裏面の洗浄において、膜面側への異物の回り込みにより、膜面に付着する異物の数が増加する。そうすると、その後の工程で行なう膜面の洗浄において、除去しきれずに残存する異物の数が増加する傾向となる。つまり、洗浄工程において、フォトマスク基板１のいずれの面でも異物の数を増加させるプロセスが存在しないことが理想であり、特に微細なパターンを形成する（又はパターンが形成された）膜面側の異物の数は、たとえ一時であっても増加させない工程を採用することが有利であることを、発明者は見出した。 In the cleaning for removing foreign matters having a size of less than 50 μm (for example, about 0.5 to 50 μm), the cleaning environment is sufficiently cleaned. If the contamination of the cleaning device, the contamination of the scrubbing material, the dripping or re-adhesion of the treatment liquid scattered in the cleaning device is insufficient, the number of foreign matters is increased rather than reduced by one cleaning. It can happen. On the other hand, the number of foreign matters can be reduced at a predetermined rate by properly arranging the cleaning environment. However, even if, for example, about 70% of foreign matter can be removed by one cleaning, it is practically impossible to remove 100%. Therefore, in the substrate cleaning process, it is important to reduce the number of foreign matters as much as possible in the initial stage before cleaning the film surface. As described above, when the back surface of the photomask substrate 1 is first cleaned and then the film surface of the photomask substrate 1 is cleaned, in the first cleaning of the back surface, the film is caused by the entrapping of foreign matter toward the film surface side. The number of foreign substances adhering to the surface increases. If it does so, in the washing | cleaning of the film | membrane surface performed at a subsequent process, it will tend to increase the number of the foreign materials which remain without being removed. That is, in the cleaning process, it is ideal that there is no process for increasing the number of foreign matters on any surface of the photomask substrate 1, and in particular on the side of the film surface on which a fine pattern is formed (or a pattern is formed). The inventor has found that it is advantageous to employ a process that does not increase the number of foreign substances even if only temporarily.
以下、上記発明者の知見に基づく本発明の具体的な実施形態について説明する。 Hereinafter, specific embodiments of the present invention based on the knowledge of the inventor will be described.
＜基板処理装置＞
図４は、本発明の実施形態に係る基板処理装置の構成例を示す概略側面図である。
図示した基板処理装置１０は、たとえばフォトマスク基板を被処理基板とする基板洗浄装置として適用可能である。その場合、基板処理装置１０は、フォトマスク製造に関わる各工程（成膜、現像、エッチング、検査、欠陥修正など）の前又は後に、必要に応じてフォトマスク基板を洗浄するために用いることができる。特に、本発明の実施形態に係るフォトマスク基板１は、一連のフォトマスク製造において、エッチング工程の後、及び、欠陥修正工程の後など、パターンが形成された状態のフォトマスク基板を洗浄する際に、顕著な効果を奏する。
<Substrate processing equipment>
FIG. 4 is a schematic side view showing a configuration example of the substrate processing apparatus according to the embodiment of the present invention.
The illustrated substrate processing apparatus 10 can be applied as, for example, a substrate cleaning apparatus using a photomask substrate as a substrate to be processed. In that case, the substrate processing apparatus 10 is used to clean the photomask substrate as necessary before or after each step (film formation, development, etching, inspection, defect correction, etc.) related to photomask manufacturing. it can. In particular, the photomask substrate 1 according to the embodiment of the present invention is used for cleaning a photomask substrate on which a pattern has been formed, such as after an etching process and after a defect correction process, in a series of photomask manufacturing. It has a remarkable effect.
図示した基板処理装置１０は、基板を支承する支承部材としてのホルダ１１と、基板の外縁部を保持するクランプ部材１２と、クランプ部材１２に保持された基板をホルダ１１から離間させるべく駆動する駆動手段１３と、スクラブ材１４を移動させるスクラブ移動手段１５と、基板の上向き面に処理液を供給する上面側処理液供給手段１６と、基板の下向き面に処理液を供給する下面側処理液供給手段１７と、駆動手段１３及びスクラブ移動手段１５を制御する制御部１８と、を備える。以降、基板をフォトマスク基板１として説明する。フォトマスク基板１の有する２つの主面のうち、一方の主面２は転写用パターン１ａが形成された膜面、他方の主面３はガラス面からなる裏面となっている。 The illustrated substrate processing apparatus 10 includes a holder 11 as a support member that supports a substrate, a clamp member 12 that holds an outer edge portion of the substrate, and a drive that drives the substrate held by the clamp member 12 to be separated from the holder 11. Means 13; scrub moving means 15 for moving the scrubbing material 14; upper surface side processing liquid supply means 16 for supplying the processing liquid to the upward surface of the substrate; and lower surface side processing liquid supply for supplying the processing liquid to the downward surface of the substrate. Means 17 and a control unit 18 for controlling the driving means 13 and the scrub moving means 15 are provided. Hereinafter, the substrate is described as the photomask substrate 1. Of the two main surfaces of the photomask substrate 1, one main surface 2 is a film surface on which the transfer pattern 1a is formed, and the other main surface 3 is a back surface made of a glass surface.
ホルダ１１は、図５（ａ）の側面図に示すように、フォトマスク基板１の主面２，３を水平にした状態で、フォトマスク基板１を下向き面側から支承する部材である。なお、水平とは実質的に水平である場合を指し、たとえば、フォトマスク基板１が自重による撓みの影響で変形している場合などを含む。基板処理装置１０にフォトマスク基板１をセットする場合は、まずホルダ１１にフォトマスク基板１を載置する。ホルダ１１は、基板処理装置１０の専用治具として用いる以外にも、フォトマスク基板１を他工程から基板処理装置１０に搬送する際の搬送治具として用いることもでき、又は他工程においてフォトマスク基板１を支承する部材として兼用してもよい。このため、ホルダ１１は、基板処理装置１０に対して着脱可能となっていることが好ましい。 As shown in the side view of FIG. 5A, the holder 11 is a member that supports the photomask substrate 1 from the downward surface side in a state where the main surfaces 2 and 3 of the photomask substrate 1 are horizontal. In addition, horizontal refers to a case where it is substantially horizontal, and includes, for example, a case where the photomask substrate 1 is deformed by the influence of bending due to its own weight. When setting the photomask substrate 1 on the substrate processing apparatus 10, first, the photomask substrate 1 is placed on the holder 11. In addition to using the holder 11 as a dedicated jig for the substrate processing apparatus 10, the holder 11 can also be used as a transfer jig for transferring the photomask substrate 1 from another process to the substrate processing apparatus 10. It may be used as a member for supporting the substrate 1. For this reason, it is preferable that the holder 11 be detachable from the substrate processing apparatus 10.
ホルダ１１には、それぞれ柱状をなす複数のピン２１が設けられている。これらのピン２１は、フォトマスク基板１をホルダ１１に載置したときに、フォトマスク基板１の下向き面に接触することにより、フォトマスク基板１を下向き面側から支承する。各々のピン２１は、フォトマスク基板１の主面の外縁から１０ｍｍの範囲内に位置することが好ましい。また、各々のピン２１は、フォトマスク基板１の主面とピン２１との接触面積は小さく、例えばトータルで１００ｍｍ２以下である。接触面積を小さくするために、該主面と接触するピン２１の先端（上端）が凸曲面形状、好ましくは、半球面状に形成されていてもよい。また、各々のピン２１は、図５（ｂ）の平面図に示すように、フォトマスク基板１の主面の４つの角部近傍にそれぞれピン２１が位置するように設定されることが好ましい。 The holder 11 is provided with a plurality of pins 21 each having a columnar shape. The pins 21 support the photomask substrate 1 from the downward surface side by contacting the downward surface of the photomask substrate 1 when the photomask substrate 1 is placed on the holder 11. Each pin 21 is preferably located within a range of 10 mm from the outer edge of the main surface of the photomask substrate 1. Further, each pin 21 has a small contact area between the main surface of the photomask substrate 1 and the pin 21, for example, 100 mm 2 or less in total. In order to reduce the contact area, the tip (upper end) of the pin 21 in contact with the main surface may be formed in a convex curved shape, preferably a hemispherical shape. Each pin 21 is preferably set such that the pin 21 is positioned in the vicinity of the four corners of the main surface of the photomask substrate 1 as shown in the plan view of FIG.
クランプ部材１２は、ホルダ１１に支承された基板の外縁部の一部を、対向する２方向から挟んで該基板を保持する部材である。この一対のクランプ部材の中心軸は、一直線上にある。クランプ部材１２は、平面視四角形をなすフォトマスク基板１の主面のうち、相対向する二辺の一部をそれぞれ保持することが好ましい。具体的には、フォトマスク基板１の主面の外縁を挟んで保持するクランプ部材１２とすることができる。ここで、フォトマスク基板１は、図６に示すように、２つの主面（２、３）と、４つの端面４を有し、主面と端面の間に、それぞれコーナ面５をもつ。クランプ部材１２は、フォトマスク基板１のコーナ面５に接触する接触面を有していることが好ましい。これによって、クランプ部材１２は、少なくともいずれか一方の基板主面に面接触せず、主面に対しては線接触のみの状態によってフォトマスク基板１を保持することができる。クランプ部材１２の先端には、図６に示すように、断面が台形状の切り込みを形成することにより、クランプ保持するフォトマスク基板の主面に対して傾斜角をもつ２つの接触面２２が設けられている。クランプ部材１２の先端における２つの接触面２２の開き角度θ（ｄｅｇ）は、フォトマスク基板１の各主面２，３と端面４との間に形成されるコーナ面５に接触面２２が接触し得るように設定することが好ましい。例えば、７０≦θ≦１００とすることができる。 The clamp member 12 is a member that holds the substrate by sandwiching a part of the outer edge portion of the substrate supported by the holder 11 from two opposing directions. The central axes of the pair of clamp members are on a straight line. The clamp member 12 preferably holds a part of two opposite sides of the main surface of the photomask substrate 1 having a square shape in plan view. Specifically, the clamp member 12 that holds the outer edge of the main surface of the photomask substrate 1 can be used. Here, as shown in FIG. 6, the photomask substrate 1 has two main surfaces (2, 3) and four end surfaces 4, and each has a corner surface 5 between the main surfaces. It is preferable that the clamp member 12 has a contact surface that contacts the corner surface 5 of the photomask substrate 1. As a result, the clamp member 12 can hold the photomask substrate 1 in a state of only line contact with the main surface without making surface contact with at least one of the main surfaces of the substrate. As shown in FIG. 6, two contact surfaces 22 having an inclination angle with respect to the main surface of the photomask substrate to be clamped are provided at the tip of the clamp member 12 by forming a notch having a trapezoidal cross section. It has been. The opening angle θ (deg) of the two contact surfaces 22 at the tip of the clamp member 12 is such that the contact surface 22 contacts the corner surface 5 formed between the main surfaces 2 and 3 and the end surface 4 of the photomask substrate 1. It is preferable to set so as to be able to. For example, 70 ≦ θ ≦ 100.
ここで、図７に示すように、フォトマスク基板１が平面視長方形に形成され、フォトマスク基板１の長辺の長さがＷ１、短辺の長さがＷ２である場合、クランプ部材１２がフォトマスク基板１を保持する接触長さＬ（ｍｍ）は、たとえば、以下のように設定することができる。すなわち、フォトマスク基板１を１対のクランプ部材１２で保持する場合、その辺の長さ方向でクランプ部材１２がフォトマスク基板１に接触する接触長さＬ（ｍｍ）は、本装置に適用する最小サイズのフォトマスク基板１を考慮して、５０≦Ｌ≦５００に設定することが好ましい。この場合、相対向する各辺の長さ方向の中間部又はその近傍を、それぞれ１つのクランプ部材１２により保持することが好ましい。この場合、一辺（長辺、短辺）が５００〜１５００ｍｍ程度の、多様なサイズのフォトマスク基板１を２つのクランプ部材１２で保持することができる。 Here, as shown in FIG. 7, when the photomask substrate 1 is formed in a rectangular shape in plan view, the length of the long side of the photomask substrate 1 is W1, and the length of the short side is W2, the clamp member 12 is The contact length L (mm) for holding the photomask substrate 1 can be set as follows, for example. That is, when the photomask substrate 1 is held by a pair of clamp members 12, the contact length L (mm) at which the clamp member 12 contacts the photomask substrate 1 in the length direction of the sides is applied to this apparatus. In consideration of the photomask substrate 1 of the minimum size, it is preferable to set 50 ≦ L ≦ 500. In this case, it is preferable that the intermediate portion in the length direction of each side facing each other or the vicinity thereof is held by one clamp member 12. In this case, it is possible to hold the photomask substrate 1 of various sizes having one side (long side, short side) of about 500 to 1500 mm by the two clamp members 12.
なお、図７においては、フォトマスク基板１の相対向する２つの長辺を一対のクランプ部材１２で保持する場合を示しているが、上記接触長さＬ（ｍｍ）の設定は、フォトマスク基板１の相対向する２つの短辺を一対のクランプ部材１２で保持する場合にも同様に適用可能である。また、図８に示すように、複数対のクランプ部材を用い、フォトマスク基板１の一辺を複数（図例では２つ）のクランプ部材１２で保持する場合は、各々のクランプ部材１２の接触長さＬ１，Ｌ２をそれぞれ５０〜２００ｍｍに設定するとともに、クランプ部材１２同士の離間距離Ｂ１を５００ｍｍ以下に設定することが好ましい。 7 shows the case where two long sides facing each other of the photomask substrate 1 are held by a pair of clamp members 12, the setting of the contact length L (mm) is as follows. The same can be applied to the case where two opposing short sides are held by a pair of clamp members 12. In addition, as shown in FIG. 8, when a plurality of pairs of clamp members are used and one side of the photomask substrate 1 is held by a plurality of (two in the illustrated example) clamp members 12, the contact length of each clamp member 12 The lengths L1 and L2 are preferably set to 50 to 200 mm, respectively, and the distance B1 between the clamp members 12 is preferably set to 500 mm or less.
また、図９に示すように、フォトマスク基板１の相対向する二辺（図例では長辺）を一対のクランプ部材１２ａで保持する一方、フォトマスク基板１の相対向する他の二辺（図例では短辺）を他の一対のクランプ部材１２ｂで保持する構成としてもよい。この構成では、フォトマスク基板１の四辺を二対のクランプ部材１２ａ，１２ｂで同時に保持することもできるし、フォトマスク基板１の相対向する二辺（長辺または短辺）を二対のクランプ部材１２ａ，１２ｂで交互に保持することもできる。
尚、図７等において、フォトマスク基板１のパターンデザインは、フォトマスク基板１の向きを示すものであり、必ずしも現実の転写用パターンを意味するものではない。
Further, as shown in FIG. 9, two opposite sides (long sides in the illustrated example) of the photomask substrate 1 are held by a pair of clamp members 12a, while the other two opposite sides of the photomask substrate 1 ( It is good also as a structure hold | maintained by the other pair of clamp member 12b in the example of a short side. In this configuration, the four sides of the photomask substrate 1 can be simultaneously held by two pairs of clamp members 12a and 12b, and the two opposite sides (long side or short side) of the photomask substrate 1 are clamped in two pairs. The members 12a and 12b can be held alternately.
In FIG. 7 and the like, the pattern design of the photomask substrate 1 indicates the direction of the photomask substrate 1 and does not necessarily mean an actual transfer pattern.
クランプ部材１２は、上記図４に示すように、アーム２５の先端に取り付けられている。アーム２５は、次のように動作する。まず、フォトマスク基板１をクランプ部材１２によって保持する必要があるときは、ホルダ１１に支承されたフォトマスク基板１の外縁部にクランプ部材１２が接触するよう、アーム２５は前進動作する。また、フォトマスク基板１をクランプ部材１２によって保持する必要がないときは、フォトマスク基板１の外縁部からクランプ部材１２が離間するよう、アーム２５はホルダ１１の外側へと待避動作する。このようなアーム２５の動作は、制御部１８によって制御され、対をなす２つのアーム２５の動作が同期するように制御が実行されることにより、一対のクランプ部材１２も同期して動作することができる。 The clamp member 12 is attached to the tip of the arm 25 as shown in FIG. The arm 25 operates as follows. First, when the photomask substrate 1 needs to be held by the clamp member 12, the arm 25 moves forward so that the clamp member 12 contacts the outer edge portion of the photomask substrate 1 supported by the holder 11. Further, when it is not necessary to hold the photomask substrate 1 by the clamp member 12, the arm 25 is retracted to the outside of the holder 11 so that the clamp member 12 is separated from the outer edge portion of the photomask substrate 1. Such an operation of the arm 25 is controlled by the control unit 18, and the control is executed so that the operations of the two arms 25 forming a pair are synchronized, so that the pair of clamp members 12 are also operated in synchronization. Can do.
駆動手段１３は、クランプ部材１２に保持されたフォトマスク基板１をホルダ１１から離間させるために、ホルダ１１とクランプ部材１２の少なくとも一方を鉛直方向に移動させるように駆動する。クランプ部材１２を鉛直方向に移動させる場合は、上述したアーム２５の前進動作によってフォトマスク基板１をクランプ部材１２で保持した後、図１０（ａ）に示すようにクランプ部材１２を鉛直方向の上側に移動（以下、「上昇」ともいう。）させる。また、ホルダ１１を鉛直方向に移動させる場合は、図１０（ｂ）に示すように、フォトマスク基板１をクランプ部材１２で保持した後、ホルダ１１を鉛直方向の下側に移動（以下、「下降」ともいう。）させる。これにより、鉛直方向において、フォトマスク基板１の下向き面とホルダ１１とを離間させ、フォトマスク基板１の下向き面側の空間を広げることができる。 The driving means 13 drives the holder 11 and the clamp member 12 to move in the vertical direction in order to separate the photomask substrate 1 held by the clamp member 12 from the holder 11. When the clamp member 12 is moved in the vertical direction, the photomask substrate 1 is held by the clamp member 12 by the advance operation of the arm 25 described above, and then the clamp member 12 is moved upward in the vertical direction as shown in FIG. (Hereinafter also referred to as “rising”). When the holder 11 is moved in the vertical direction, as shown in FIG. 10B, after the photomask substrate 1 is held by the clamp member 12, the holder 11 is moved downward in the vertical direction (hereinafter, “ It is also called “down”.) Thereby, in the vertical direction, the downward surface of the photomask substrate 1 and the holder 11 can be separated, and the space on the downward surface side of the photomask substrate 1 can be widened.
なお、フォトマスク基板１の下向き面とホルダ１１とを離間させる場合は、クランプ部材１２を上昇させ、かつ、ホルダ１１を下降させてもよい。また、上記図１０（ａ）のように上昇させたクランプ部材１２を元の位置まで下降させる、或いは、上記図１０（ｂ）のように下降させたホルダ１１を元の位置まで上昇させることにより、フォトマスク基板１とホルダ１１を相対的に接近させ、フォトマスク基板１の下向き面側の空間を閉じることもできる。例えば、ホルダ１１とクランプ部材１２との間で、フォトマスク基板１を受け渡すときには、互いに相対的に接近させる。 When the downward surface of the photomask substrate 1 and the holder 11 are separated, the clamp member 12 may be raised and the holder 11 may be lowered. Further, the clamp member 12 raised as shown in FIG. 10 (a) is lowered to the original position, or the holder 11 lowered as shown in FIG. 10 (b) is raised to the original position. The space on the downward surface side of the photomask substrate 1 can also be closed by relatively approaching the photomask substrate 1 and the holder 11. For example, when the photomask substrate 1 is delivered between the holder 11 and the clamp member 12, the holders 11 and the clamp member 12 are relatively close to each other.
また、駆動手段１３は、ホルダ１１に支承されたフォトマスク基板１を水平面内で回転させる回転手段としての機能も兼ね備えている。回転手段は、ホルダ１１が水平に取り付けられる回転軸１９（図４）を回転させることにより、ホルダ１１に支承されたフォトマスク基板１を水平面内で回転させる。これにより、水平面内におけるフォトマスク基板１の配置姿勢（向き）を変えることができる。回転手段は、たとえば、水平面内でフォトマスク基板１を９０度の角度で回転させることが可能である。 The driving means 13 also has a function as a rotating means for rotating the photomask substrate 1 supported by the holder 11 in a horizontal plane. The rotating means rotates the photomask substrate 1 supported by the holder 11 in a horizontal plane by rotating a rotating shaft 19 (FIG. 4) to which the holder 11 is attached horizontally. Thereby, the arrangement posture (direction) of the photomask substrate 1 in the horizontal plane can be changed. The rotating means can rotate the photomask substrate 1 at an angle of 90 degrees in a horizontal plane, for example.
なお、本実施形態では駆動手段１３が回転手段の機能を兼ねる構成としたが、駆動手段１３と回転手段をそれぞれ独立に構成することも可能である。また、基板処理装置１０に対してスピン洗浄装置、又は乾燥装置の機能を併せ持たせる場合には、上記回転手段は、ホルダ１１を高速回転させるものとすることができる。 In the present embodiment, the driving unit 13 serves as a function of the rotating unit. However, the driving unit 13 and the rotating unit may be configured independently of each other. When the substrate processing apparatus 10 is provided with the functions of a spin cleaning apparatus or a drying apparatus, the rotating means can rotate the holder 11 at a high speed.
スクラブ移動手段１５は、フォトマスク基板１の下向き面を接触洗浄するためのスクラブ材１４を、上記駆動手段１３によりフォトマスク基板１の下向き面側に形成した空間に導入する。スクラブ移動手段１５は、駆動手段１３がフォトマスク基板１をホルダ１１から離間させた場合に、離間によりフォトマスク基板１の下向き面側に形成された空間内でスクラブ材１４を移動させる。また、スクラブ移動手段１５は、フォトマスク基板１の下向き面にスクラブ材１４を接触させつつ、スクラブ材１４をフォトマスク基板１の下向き面に沿って接触移動させる。これにより、フォトマスク基板１の下向き面をスクラブ材１４によって接触洗浄することができる。 The scrub moving means 15 introduces a scrub material 14 for contacting and cleaning the downward surface of the photomask substrate 1 into the space formed on the downward surface side of the photomask substrate 1 by the driving means 13. When the driving unit 13 moves the photomask substrate 1 away from the holder 11, the scrub moving unit 15 moves the scrubbing material 14 in the space formed on the downward surface side of the photomask substrate 1 by the separation. Further, the scrub moving means 15 moves the scrub material 14 in contact with the downward surface of the photomask substrate 1 while bringing the scrub material 14 into contact with the downward surface of the photomask substrate 1. Thereby, the downward surface of the photomask substrate 1 can be contact cleaned with the scrubbing material 14.
スクラブ移動手段１５は、スポンジやブラシなどのスクラブ材１４を保持することができる。また、スクラブ移動手段１５は、フォトマスク基板１の下向き面の接触洗浄が必要なときは、上記空間にスクラブ材１４を導入し、接触洗浄が不要なときは、上記空間からスクラブ材１４を退避させる。また、スクラブ移動手段１５は、フォトマスク基板１の下向き面にスクラブ材１４を接触させ、その状態を維持しつつフォトマスク基板１の下向き面に沿ってスクラブ材１４を移動させることにより、下向き面全体にわたって処理（洗浄）することを可能とする。このため、フォトマスク基板１の下向き面をＸＹ面とするとき、スクラブ移動手段１５は、図１１に示すように、該ＸＹ面内でスクラブ材１４を所望のルートで水平移動させることにより、下向き面全体をカバーするように処理する。 The scrub moving means 15 can hold a scrub material 14 such as a sponge or a brush. The scrub moving means 15 introduces the scrubbing material 14 into the space when the downward cleaning of the photomask substrate 1 is necessary, and retracts the scrubbing material 14 from the space when the contact cleaning is unnecessary. Let Further, the scrub moving means 15 brings the scrub material 14 into contact with the downward surface of the photomask substrate 1 and moves the scrub material 14 along the downward surface of the photomask substrate 1 while maintaining the state. It is possible to process (wash) the whole. For this reason, when the downward surface of the photomask substrate 1 is an XY surface, the scrub moving means 15 moves downward by horizontally moving the scrub material 14 along the desired route within the XY surface as shown in FIG. Process to cover the entire surface.
スクラブ材１４は、好ましくはディスクブラシやスポンジなど、ディスク形状が好ましい（図１２）。他のスクラブ材としてはロールブラシを使用してもよいが、水平な回転軸をもつロールブラシを用いると、ロールブラシの回転によって跳ね上げられた処理液と一緒に異物が飛散し、基板に異物が再付着しやすい。このため、異物の再付着による基板の上向き面の汚染を防止するためには、ディスク形状のスクラブ材１４を適用し、これを上記ＸＹ面内のみで移動させつつ、基板を処理（洗浄）することが好ましい。 The scrubbing material 14 preferably has a disk shape such as a disk brush or sponge (FIG. 12). A roll brush may be used as the other scrubbing material, but if a roll brush having a horizontal rotation axis is used, foreign matter scatters along with the processing liquid splashed up by the rotation of the roll brush, and the foreign matter appears on the substrate. Is easy to reattach. For this reason, in order to prevent contamination of the upward surface of the substrate due to the reattachment of foreign matter, the disc-shaped scrubbing material 14 is applied, and the substrate is processed (cleaned) while being moved only within the XY plane. It is preferable.
上面側処理液供給手段１６（図４）は、ホルダ１１に支承されるフォトマスク基板１の上向き面に処理液を供給する。 The upper surface side processing liquid supply means 16 (FIG. 4) supplies the processing liquid to the upward surface of the photomask substrate 1 supported by the holder 11.
下面側処理液供給手段１７（図４）は、クランプ部材１２により保持されるフォトマスク基板１の下向き面に処理液を供給する。たとえば、スクラブ移動手段１５によりフォトマスク基板１の下向き面に沿ってスクラブ材１４が接触移動する際、フォトマスク基板１とスクラブ材１４の接触面近傍に処理液（洗浄液又はリンス液）を供給する。
供給される処理液は、フォトマスク基板１の下向き面での滞留時間を長くするため、粘性の高いゲル状のものや、泡を含むものが好ましく用いられる。このため、下面側処理液供給手段１７が連結された、処理液タンク（不図示）には、発泡手段として、泡を生成するためのミキサーや、気体（エア、窒素ガスなど）の供給手段を伴なうものであってもよい。
The lower surface side processing liquid supply means 17 (FIG. 4) supplies the processing liquid to the downward surface of the photomask substrate 1 held by the clamp member 12. For example, when the scrubbing material 14 contacts and moves along the downward surface of the photomask substrate 1 by the scrubbing means 15, a processing liquid (cleaning liquid or rinsing liquid) is supplied to the vicinity of the contact surface between the photomask substrate 1 and the scrubbing material 14. .
In order to lengthen the residence time on the downward surface of the photomask substrate 1, the treatment liquid to be supplied is preferably a highly viscous gel or one containing bubbles. For this reason, the processing liquid tank (not shown) to which the lower surface side processing liquid supply means 17 is connected has, as foaming means, a mixer for generating bubbles and gas (air, nitrogen gas, etc.) supply means. It may be accompanied.
制御部１８は、予め設定された制御プログラムに従って制御対象を制御する。制御対象には、駆動手段１３及びスクラブ移動手段１５に加えてアーム２５が含まれる。このため、駆動手段１３、スクラブ移動手段１５及びアーム２５の動きは、それぞれ制御部１８によって制御される。 The control unit 18 controls the control target according to a preset control program. Control objects include the arm 25 in addition to the drive means 13 and the scrub moving means 15. For this reason, the movement of the drive means 13, the scrub moving means 15, and the arm 25 is controlled by the control unit 18, respectively.
＜基板処理方法＞
続いて、本発明の実施形態に係る基板処理方法について、図１３及び図１４を用いて説明する。なお、図１３（ａ）〜（ｆ）及び図１４（ａ）〜（ｆ）において、左側は側面図、右側は平面図を示している。
<Substrate processing method>
Subsequently, a substrate processing method according to an embodiment of the present invention will be described with reference to FIGS. 13A to 13F and FIGS. 14A to 14F, the left side is a side view and the right side is a plan view.
本発明の実施形態に係る基板処理方法は、上記構成の基板処理装置１０を使用して実施してもよいし、他の構成の基板処理装置を使用して実施してもよい。ここでは一例として、基板処理装置１０を使用した基板処理方法を説明する。また、本発明の実施形態に係る基板処理方法では、転写用パターンが形成されたフォトマスク基板１を被処理基板とするとともに、転写用パターンが形成されたフォトマスク基板１の膜面を上向き面とし、裏面（ガラス面）を下向き面として、下向き面を処理液によって処理（洗浄等）する場合について説明する。 The substrate processing method according to the embodiment of the present invention may be performed using the substrate processing apparatus 10 having the above-described configuration, or may be performed using a substrate processing apparatus having another configuration. Here, as an example, a substrate processing method using the substrate processing apparatus 10 will be described. Moreover, in the substrate processing method according to the embodiment of the present invention, the photomask substrate 1 on which the transfer pattern is formed is used as the substrate to be processed, and the film surface of the photomask substrate 1 on which the transfer pattern is formed faces upward. The case where the back surface (glass surface) is the downward surface and the downward surface is treated (cleaned or the like) with the processing liquid will be described.
（第１実施形態に係る基板処理方法）
まず、図１３（ａ）に示すように、被処理基板となるフォトマスク基板１を基板処理装置１０（図４）にセットする。具体的には、フォトマスク基板１の主面２，３を水平にした状態で、ホルダ１１にフォトマスク基板１を載置する（セットする工程）。その際、ホルダ１１に設けられた複数のピン２１は、フォトマスク基板１の下向き面の外縁近傍に接触することにより、フォトマスク基板１の下向き面側から該基板の自重を支承する。
(Substrate processing method according to the first embodiment)
First, as shown in FIG. 13A, the photomask substrate 1 to be processed is set in the substrate processing apparatus 10 (FIG. 4). Specifically, the photomask substrate 1 is placed (set step) on the holder 11 with the main surfaces 2 and 3 of the photomask substrate 1 being horizontal. At this time, the plurality of pins 21 provided on the holder 11 contact the vicinity of the outer edge of the downward surface of the photomask substrate 1, thereby supporting the weight of the substrate from the downward surface side of the photomask substrate 1.
次に、図１３（ｂ）に示すように、フォトマスク基板１を一対のクランプ部材１２で保持すべく、フォトマスク基板１とほぼ同一の水平面上から、互いに対向する一対のアーム２５（図４）を接近（前進移動）させる。その際、各々のアーム２５の先端に取り付けられたクランプ部材１２が、フォトマスク基板１の主面の相対向する二辺（図例では短辺）にある基板外縁部の一部をクランプ保持する。これにより、フォトマスク基板１は、クランプ部材１２によって両側から挟まれて水平に保持される（保持工程、第１保持工程）。 Next, as shown in FIG. 13B, in order to hold the photomask substrate 1 with a pair of clamp members 12, a pair of arms 25 (FIG. 4) facing each other from substantially the same horizontal plane as the photomask substrate 1. ) Is approaching (moving forward). At that time, the clamp member 12 attached to the tip of each arm 25 clamps and holds a part of the outer edge of the substrate on two opposite sides (short sides in the example) of the main surface of the photomask substrate 1. . Thereby, the photomask substrate 1 is sandwiched from both sides by the clamp member 12 and held horizontally (holding step, first holding step).
次に、図１３（ｃ）に示すように、駆動手段１３によってホルダ１１を下降させることにより、フォトマスク基板１の下向き面とホルダ１１を離間する（離間工程）。これにより、フォトマスク基板１の下向き面とホルダ１１との間に、所定の高さの空間を形成する。この空間は、スクラブ移動手段１５が導入されても干渉しない程度の高さ、好ましくは、４０〜８０ｃｍ程度の高さを有する。なお、ここではホルダ１１を下降させたが、フォトマスク基板１を保持するクランプ部材１２を上昇させてもよい。また、ホルダ１１を下降させ、かつ、クランプ部材１２を上昇させてもよい。 Next, as shown in FIG. 13C, the holder 11 is lowered by the driving means 13, thereby separating the downward surface of the photomask substrate 1 from the holder 11 (separation step). Thereby, a space having a predetermined height is formed between the downward surface of the photomask substrate 1 and the holder 11. This space has a height that does not interfere even when the scrub moving means 15 is introduced, and preferably has a height of about 40 to 80 cm. Although the holder 11 is lowered here, the clamp member 12 that holds the photomask substrate 1 may be raised. Further, the holder 11 may be lowered and the clamp member 12 may be raised.
次に、図１３（ｄ）に示すように、フォトマスク基板１の下向き面とホルダ１１との間の空間内にスクラブ移動手段１５を導入するとともに、スクラブ移動手段１５に取り付けられたスクラブ材１４を該空間内でフォトマスク基板１の下向き面に接触させる。また、フォトマスク基板１の下向き面にスクラブ材１４を接触させつつ、スクラブ材１４をフォトマスク基板１の下向き面に沿って移動させる。このとき、フォトマスク基板１の下向き面に下面側処理液供給手段１７によって処理液を供給することにより、フォトマスク基板１の下向き面を処理液によって処理（本形態では洗浄処理）する（処理工程、第１処理工程）。 Next, as shown in FIG. 13 (d), the scrub moving means 15 is introduced into the space between the downward surface of the photomask substrate 1 and the holder 11, and the scrub material 14 attached to the scrub moving means 15. Is brought into contact with the downward surface of the photomask substrate 1 in the space. Further, the scrub material 14 is moved along the downward surface of the photomask substrate 1 while the scrub material 14 is brought into contact with the downward surface of the photomask substrate 1. At this time, by supplying the processing liquid to the downward surface of the photomask substrate 1 by the lower surface side processing liquid supply means 17, the downward surface of the photomask substrate 1 is processed with the processing liquid (in this embodiment, a cleaning process) (processing step). , First processing step).
本態様では、スクラブ材１４としてディスクブラシを用いるとともに、ディスクブラシを所定の速度で回転（自転）させながら、フォトマスク基板１の下向き面全体に所定の軌跡を描くようにディスクブラシを移動させる。スクラブ材１４としてのディスクブラシの移動は、たとえば上記図１２に点線で示すような往復運動でよい。また、好ましくは、スクラブ材１４の中央に縦方向に貫通する貫通孔を形成し、この貫通孔を通じて下面側処理液供給手段１７が処理液（洗浄液）を供給する構成とすれば、フォトマスク基板１の下向き面とスクラブ材１４との接触面に直接、処理液を供給することができる。下面側処理液供給手段１７が供給する処理液は、たとえば３０〜６０度程度に加温してあってもよい。処理液による処理を終えたら、フォトマスク基板１の下向き面とホルダ１１との間の空間から、スクラブ移動手段１５と共にスクラブ材１４を待避させる。 In this embodiment, a disc brush is used as the scrubbing material 14, and the disc brush is moved so as to draw a predetermined trajectory on the entire downward surface of the photomask substrate 1 while rotating (spinning) the disc brush at a predetermined speed. The disc brush as the scrubbing material 14 may be moved in a reciprocating motion as indicated by a dotted line in FIG. Preferably, if a through-hole penetrating in the vertical direction is formed in the center of the scrubbing material 14 and the lower surface processing liquid supply means 17 supplies the processing liquid (cleaning liquid) through this through-hole, the photomask substrate The treatment liquid can be supplied directly to the contact surface between the downward surface 1 and the scrubbing material 14. The processing liquid supplied by the lower surface processing liquid supply means 17 may be heated to about 30 to 60 degrees, for example. When the treatment with the treatment liquid is finished, the scrub material 14 is retracted together with the scrub moving means 15 from the space between the downward surface of the photomask substrate 1 and the holder 11.
なお、フォトマスク基板１をクランプ部材１２で保持しつつ、フォトマスク基板１の下向き面全体をスクラブ材１４によって接触洗浄しようとする場合、クランプ部材１２が存在する基板外縁部の一部では、クランプ部材１２とスクラブ材１４との干渉により、スクラブ材１４を接触させることができない領域が生じる。具体的には、上記図６に示すように、クランプ部材１２の先端部がフォトマスク基板１の下向き面側に寸法ｄだけ突き出して配置されるエリアが存在し、そのエリアは、クランプ部材１２とスクラブ材１４との干渉により処理（洗浄）が施されない未処理エリア（未洗浄エリア）となる。未洗浄エリアの面積は、クランプ部材１２の形状とフォトマスク基板１の厚みによって変化するが、たとえば、寸法ｄは２〜５０ｍｍ程度である。一般には、フォトマスク基板１の基板サイズ（各辺の長さ寸法）の大小に連動して基板の厚みが異なるため、表示装置製造用フォトマスクとして、サイズの異なる様々な基板を処理可能とする為にはこの傾向が避けられない。 Note that when the photomask substrate 1 is held by the clamp member 12 and the entire downward surface of the photomask substrate 1 is to be contact cleaned with the scrubbing material 14, the clamp member 12 may be clamped at a part of the outer edge of the substrate. Due to the interference between the member 12 and the scrubbing material 14, an area where the scrubbing material 14 cannot be brought into contact is generated. Specifically, as shown in FIG. 6, there is an area where the tip of the clamp member 12 protrudes from the downward surface side of the photomask substrate 1 by the dimension d, and the area includes the clamp member 12 and the area. Due to interference with the scrubbing material 14, an untreated area (uncleaned area) that is not treated (cleaned) is formed. Although the area of the uncleaned area varies depending on the shape of the clamp member 12 and the thickness of the photomask substrate 1, for example, the dimension d is about 2 to 50 mm. In general, since the thickness of the substrate varies in conjunction with the size of the photomask substrate 1 (length of each side), various substrates having different sizes can be processed as photomasks for manufacturing display devices. For this reason, this tendency is inevitable.
次に、図１３（ｅ）に示すように、上記空間を広げるために下降させていたホルダ１１を駆動手段１３によって上昇させることにより、フォトマスク基板１を再びホルダ１１上にセットする。 Next, as shown in FIG. 13 (e), the photomask substrate 1 is set on the holder 11 again by raising the holder 11 which has been lowered to widen the space by the driving means 13.
次に、アーム２５をホルダ１１の外側に待避させることにより、図１３（ｆ）に示すように、フォトマスク基板１の相対向する二辺（図例では短辺）にある基板外縁部を、クランプ部材１２によるクランプ保持から解放する。これにより、フォトマスク基板１は、複数のピン２１を有するホルダ１１により、再び下向き面側から支承された状態になる。この段階では、フォトマスク基板１の下側面に上記未処理エリア（未洗浄エリア）１ｂが存在する。 Next, by retracting the arm 25 to the outside of the holder 11, as shown in FIG. 13 (f), the substrate outer edge portions on the two opposite sides (short sides in the example) of the photomask substrate 1 are Release from clamping by the clamping member 12. As a result, the photomask substrate 1 is again supported from the downward surface side by the holder 11 having the plurality of pins 21. At this stage, the unprocessed area (uncleaned area) 1b exists on the lower surface of the photomask substrate 1.
次に、図１４（ａ）に示すように、駆動手段１３によりホルダ１１を水平面内で９０度（又は２７０度）回転させる（回転工程）。これにより、水平面内においてフォトマスク基板１の長辺と短辺の向きが入れ替わる。 Next, as shown in FIG. 14A, the holder 11 is rotated 90 degrees (or 270 degrees) in the horizontal plane by the driving means 13 (rotation process). Thereby, the direction of the long side and the short side of the photomask substrate 1 is switched in the horizontal plane.
次に、図１４（ｂ）に示すように、一対のアーム２５を再び接近（前進移動）させることにより、上記図１３（ｂ）でクランプ保持した二辺と異なる二辺（図例では長辺）にある基板外縁部をクランプ部材１２でクランプ保持する（第２保持工程）。 Next, as shown in FIG. 14 (b), by bringing the pair of arms 25 closer (forward movement) again, two sides different from the two sides clamped and held in FIG. ) Is clamped and held by the clamp member 12 (second holding step).
次に、図１４（ｃ）に示すように、再び駆動手段１３によってホルダ１１を下降させて、フォトマスク基板１の下向き面とホルダ１１を離間することにより、フォトマスク基板１の下向き面とホルダ１１との間に、所定の高さの空間を形成する。 Next, as shown in FIG. 14C, the holder 11 is lowered again by the driving means 13 to separate the downward surface of the photomask substrate 1 from the holder 11, whereby the downward surface of the photomask substrate 1 and the holder are separated. 11 and a space having a predetermined height.
次に、図１４（ｄ）に示すように、再びフォトマスク基板１の下向き面とホルダ１１との間の空間内にスクラブ移動手段１５を導入し、該空間内でスクラブ材１４をフォトマスク基板１の下向き面に接触させつつ、スクラブ材１４をフォトマスク基板１の下向き面に沿って移動させることにより、フォトマスク基板１の下向き面全体を処理液（洗浄液）によって処理する（第２処理工程）。このとき、上記未処理エリア（未洗浄エリア）１ｂにもスクラブ材１４が接触するため、未処理エリア１ｂが消失する。よって、未処理エリア１ｂを含む、下向き面全体の洗浄が完了する。 Next, as shown in FIG. 14D, the scrub moving means 15 is again introduced into the space between the downward surface of the photomask substrate 1 and the holder 11, and the scrubbing material 14 is placed in the space in the photomask substrate. The entire downward surface of the photomask substrate 1 is treated with the processing liquid (cleaning liquid) by moving the scrubbing material 14 along the downward surface of the photomask substrate 1 while being in contact with the downward surface 1 (second processing step) ). At this time, since the scrubbing material 14 also contacts the untreated area (unwashed area) 1b, the untreated area 1b disappears. Therefore, the cleaning of the entire downward surface including the untreated area 1b is completed.
次に、図１４（ｅ）に示すように、上記空間を広げるために下降させていたホルダ１１を駆動手段１３によって上昇させることにより、フォトマスク基板１を再びホルダ１１上にセットする。 Next, as shown in FIG. 14 (e), the holder 11 that has been lowered to widen the space is raised by the driving means 13, whereby the photomask substrate 1 is set on the holder 11 again.
次に、図１４（ｆ）に示すように、アーム２５をホルダ１１の外側に待避させることにより、フォトマスク基板１の相対向する二辺（図例では長辺）にある基板外縁部を、クランプ部材１２によるクランプ保持から解放する。これにより、フォトマスク基板１は、ホルダ１１に設けられた複数のピン２１により下向き面側から支承された状態に戻る。 Next, as shown in FIG. 14 (f), by retracting the arm 25 to the outside of the holder 11, the substrate outer edge portion on the two opposite sides (long side in the illustrated example) of the photomask substrate 1 is Release from clamping by the clamping member 12. As a result, the photomask substrate 1 returns to the state of being supported from the downward surface side by the plurality of pins 21 provided on the holder 11.
上記基板処理装置１０とこれを用いた基板処理方法によれば、ホルダ１１で支承したフォトマスク基板１の下向き面を、フォトマスク基板１を上下反転させなくても、スクラブ材１４を用いて処理液により処理することができる。これにより、フォトマスク基板１の裏面を下向き面として洗浄する場合に、裏面洗浄に起因した膜面側への異物等の回り込みを回避し、異物等の付着による汚染を低減することができる。
また、この基板処理方法によれば、フォトマスク基板１の相対する長辺及び短辺を、それぞれ１回ずつクランプ保持することによって、下向き面全面の処理が行なえる。クランプ保持を解放した部分は、再度クランプ保持されることが無い。四角形（正方形、又は長方形）の主面をもつフォトマスク基板１に対し、互いに直交する２つの方向から交互に保持するという、最も簡易な動作で迅速に、下向き面の全面が処理できる。
According to the substrate processing apparatus 10 and the substrate processing method using the same, the downward surface of the photomask substrate 1 supported by the holder 11 is processed using the scrubbing material 14 without turning the photomask substrate 1 upside down. It can be treated with a liquid. As a result, when cleaning the back surface of the photomask substrate 1 as a downward surface, it is possible to avoid wraparound of foreign matter and the like on the film surface side due to back surface cleaning, and to reduce contamination due to adhesion of foreign matter and the like.
In addition, according to this substrate processing method, the entire long and short sides of the photomask substrate 1 can be clamped and held once, whereby the entire downward surface can be processed. The portion from which the clamp is released is not clamped again. With respect to the photomask substrate 1 having a quadrangle (square or rectangular) main surface, the entire surface of the downward surface can be processed promptly with the simplest operation of holding alternately from two directions orthogonal to each other.
（第２実施形態に係る基板処理方法）
本発明の第２実施形態に係る基板処理方法は、上記第１実施形態と比べて、以下の点が異なる。
まず、上記図１３（ｂ）又は図１４（ｂ）の工程では、フォトマスク基板１をクランプ部材１２によってクランプ保持する。その際、フォトマスク基板１が自重によって撓むと、フォトマスク基板１の重心位置の高さが、クランプ部材１２で保持されている基板外縁部の高さより低くなる。このため、スクラブ材１４を水平面上で移動させると、フォトマスク基板１の下向き面に対するスクラブ材１４の圧力が不均一になる場合や、両者の接触状態が適切に維持されない場合がある。
(Substrate processing method according to the second embodiment)
The substrate processing method according to the second embodiment of the present invention differs from the first embodiment in the following points.
First, in the process of FIG. 13B or FIG. 14B, the photomask substrate 1 is clamped and held by the clamp member 12. At this time, when the photomask substrate 1 is bent by its own weight, the height of the center of gravity of the photomask substrate 1 becomes lower than the height of the outer edge portion of the substrate held by the clamp member 12. For this reason, if the scrubbing material 14 is moved on a horizontal plane, the pressure of the scrubbing material 14 with respect to the downward surface of the photomask substrate 1 may become uneven or the contact state between the two may not be properly maintained.
そこで本発明の第２実施形態では、図１５に示すように、水平面をＸＹ平面とするとき、スクラブ移動手段１５は、ＸＹ平面内でスクラブ材１４を移動させるだけでなく、Ｚ方向を含めた、３次元の方向にスクラブ材１４を移動可能としている。具体的には、制御部１８がスクラブ移動手段１５を制御することにより、フォトマスク基板１の下向き面形状の凹凸に沿ってスクラブ材１４を接触移動可能な構成とすることが好ましい。その場合は、たとえば、フォトマスク基板１の形状（縦横サイズ、厚み）と素材の物性により、フォトマスク基板１が自重で撓むときの撓み形状を予め算定し、算定した下向き面の形状に合わせて、スクラブ材１４の移動を３次元的に制御する。これにより、フォトマスク基板１が自重で撓む場合でも、その撓み形状に追従するよう、スクラブ材１４を下向き面に沿って移動させることができる。このため、フォトマスク基板１の下向き面全体にスクラブ材１４を均一な圧力で接触させることができる。 Therefore, in the second embodiment of the present invention, as shown in FIG. 15, when the horizontal plane is the XY plane, the scrub moving means 15 not only moves the scrub member 14 within the XY plane but also includes the Z direction. The scrub member 14 can be moved in a three-dimensional direction. Specifically, it is preferable that the control unit 18 controls the scrub moving means 15 so that the scrub material 14 can be contacted and moved along the downward surface irregularities of the photomask substrate 1. In that case, for example, the bending shape when the photomask substrate 1 bends by its own weight is calculated in advance based on the shape (vertical and horizontal size, thickness) of the photomask substrate 1 and the physical properties of the material, and matched to the calculated downward surface shape. Thus, the movement of the scrubbing material 14 is controlled three-dimensionally. Thereby, even when the photomask substrate 1 is bent by its own weight, the scrub material 14 can be moved along the downward surface so as to follow the bent shape. For this reason, the scrubbing material 14 can be brought into contact with the entire downward surface of the photomask substrate 1 with uniform pressure.
（第３実施形態に係る基板処理方法）
上記第１実施形態に係る基板処理方法では、クランプ部材１２でクランプ保持したフォトマスク基板１を水平に維持し、該基板の下向き面にスクラブ材１４を接触させる構成を採用している。一方、本第３実施形態では、図１６に示すように、クランプ部材１２でクランプ保持したフォトマスク基板１を、水平面を基準に所定角度の傾きを持たせて保持する構成を採用している。具体的には、上記図１３（ｂ）又は図１４（ｂ）の工程において、クランプ部材１２でクランプ保持したフォトマスク基板１に、所定角度（２度〜２０度程度）の傾きを持たせ、その状態で下向き面の上流側（高位側）から下面側処理液供給手段１７によって処理液（洗浄液）３０を供給する。これにより、図１６の点線の矢印で示すように、処理液３０がフォトマスク基板１の下向き面の上流側から下流側（低位側）に向かって流れる。つまり、フォトマスク基板１の下向き面において、処理液３０の流れる方向を一定方向に制御できる。このため、処理液３０の停滞や不規則な滴下を抑止することが可能となる。また、本第３実施形態においても、スクラブ移動手段１５がスクラブ材１４を三次元の方向に移動可能な構成とすることにより、フォトマスク基板１の傾きに合わせて、スクラブ材１４の移動を三次元に制御することができる。このため、フォトマスク基板１の下向き面全体にスクラブ材１４を均一な圧力で接触させることができる。
(Substrate processing method according to the third embodiment)
The substrate processing method according to the first embodiment employs a configuration in which the photomask substrate 1 clamped and held by the clamp member 12 is kept horizontal and the scrubbing material 14 is brought into contact with the downward surface of the substrate. On the other hand, in the third embodiment, as shown in FIG. 16, a configuration is adopted in which the photomask substrate 1 clamped and held by the clamp member 12 is held with a predetermined angle of inclination with respect to the horizontal plane. Specifically, in the process of FIG. 13B or FIG. 14B, the photomask substrate 1 clamped and held by the clamp member 12 is inclined by a predetermined angle (about 2 to 20 degrees). In this state, the processing liquid (cleaning liquid) 30 is supplied by the lower surface side processing liquid supply means 17 from the upstream side (higher side) of the downward surface. As a result, as indicated by the dotted arrows in FIG. 16, the processing liquid 30 flows from the upstream side to the downstream side (low side) of the downward surface of the photomask substrate 1. That is, on the downward surface of the photomask substrate 1, the direction in which the processing liquid 30 flows can be controlled to a certain direction. For this reason, it becomes possible to suppress the stagnation and irregular dripping of the processing liquid 30. Also in the third embodiment, the scrub moving means 15 can move the scrub material 14 in a three-dimensional direction, so that the scrub material 14 is moved in a tertiary manner in accordance with the inclination of the photomask substrate 1. It can be controlled originally. For this reason, the scrubbing material 14 can be brought into contact with the entire downward surface of the photomask substrate 1 with uniform pressure.
（他の実施形態）
上記実施形態においては、一対のクランプ部材１２を用いてフォトマスク基板１を保持する場合について説明したが、たとえば上記図９に示すように二対のクランプ部材１２（１２ａ，１２ｂ）を用いてフォトマスク基板１を保持する場合は、上記図１３（ｅ），（ｆ）及び図１４（ａ）の工程（回転工程）を省略することが可能である。具体的には、上記図１３（ｄ）の工程を終えたら、それまでフォトマスク基板１の相対向する二辺（短辺）を保持していた一対のクランプ部材１２ａに加えて、該二辺と異なる二辺を、他の一対のクランプ部材１２ｂで保持する。次に、一対のクランプ部材１２ａによるクランプ保持を解放した後、フォトマスク基板１の下向き面をスクラブ材１４を用いて処理液により処理（洗浄）する。次に、ホルダ１１の上昇により、フォトマスク基板１をホルダ１１に再セットした後、一対のクランプ部材１２ｂによるクランプ保持を解放する。これにより、上記第１実施形態に比べて工程が簡素化される。このため、フォトマスク基板１の処理を効率良く行なうことが可能となる。
(Other embodiments)
In the above embodiment, the case where the photomask substrate 1 is held using a pair of clamp members 12 has been described. For example, as shown in FIG. 9, two pairs of clamp members 12 (12a, 12b) are used for photo When the mask substrate 1 is held, the process (rotation process) shown in FIGS. 13 (e), 13 (f) and 14 (a) can be omitted. Specifically, after the process of FIG. 13D is completed, in addition to the pair of clamp members 12a that have been holding two opposite sides (short sides) of the photomask substrate 1 until then, the two sides Two sides different from the above are held by another pair of clamp members 12b. Next, after the clamp holding by the pair of clamp members 12 a is released, the downward surface of the photomask substrate 1 is processed (cleaned) with a processing liquid using the scrubbing material 14. Next, after the holder 11 is lifted, the photomask substrate 1 is reset to the holder 11, and then the clamp holding by the pair of clamp members 12b is released. Thereby, a process is simplified compared with the said 1st Embodiment. For this reason, it becomes possible to process the photomask substrate 1 efficiently.
上記実施形態においては、フォトマスク基板１の下向き面を処理する場合について説明したが、それと同時にフォトマスク基板１の上向き面に対しても、スクラブ移動手段やスクラブ材を用いた処理を行なってもよい。すなわち、本発明の実施形態に係る基板処理装置は、付加的に、フォトマスク基板１の上向き面を処理するためのスクラブ移動手段やスクラブ材、更には上向き面に処理液を供給する処理液供給手段を有し、その動作を上記制御部によって制御する態様を含む。 In the above embodiment, the case where the downward surface of the photomask substrate 1 is processed has been described. At the same time, the upward surface of the photomask substrate 1 may be processed using a scrub moving means or a scrub material. Good. That is, the substrate processing apparatus according to the embodiment of the present invention additionally includes a scrub moving means and a scrub material for processing the upward surface of the photomask substrate 1, and a processing liquid supply for supplying the processing liquid to the upward surface. And a mode in which the operation is controlled by the control unit.
また、本発明の実施形態に係る基板処理方法によってフォトマスク基板１の裏面を下向き面としてスクラブ材１４と洗浄液により洗浄した後、公知のスピン洗浄装置によってフォトマスク基板１の膜面を洗浄してもよい。この過程で、フォトマスク基板１の上下反転を不要とすることができる。その場合は、フォトマスク基板１の裏面を下向き面として該裏面を洗浄する裏面洗浄工程と、フォトマスク基板１の膜面を上側にした状態で、フォトマスク基板１の膜面を洗浄する膜面洗浄工程と、を有し、上記裏面洗浄工程と上記膜面洗浄工程との間に、フォトマスク基板１を上下反転させる工程を有しないフォトマスク洗浄方法が実現される。このフォトマスク洗浄方法においては、フォトマスク基板１の裏面洗浄が、膜面を上側に向けて行なわれるため、裏面洗浄時に異物が膜面側に回り込むリスクを低減することができる。 In addition, after the substrate processing method according to the embodiment of the present invention cleans the back surface of the photomask substrate 1 with the scrubbing material 14 and the cleaning liquid with the back surface facing downward, the film surface of the photomask substrate 1 is cleaned with a known spin cleaning device. Also good. In this process, the upside down of the photomask substrate 1 can be made unnecessary. In that case, a back surface cleaning process for cleaning the back surface with the back surface of the photomask substrate 1 facing downward, and a film surface for cleaning the film surface of the photomask substrate 1 with the film surface of the photomask substrate 1 facing upward And a photomask cleaning method that does not include a step of inverting the photomask substrate 1 up and down between the back surface cleaning step and the film surface cleaning step. In this photomask cleaning method, the backside cleaning of the photomask substrate 1 is performed with the film surface facing upward, so that it is possible to reduce the risk of foreign matters moving around to the film surface side during backside cleaning.
上記実施形態においては、基板処理装置１０や基板処理方法で処理の対象となる被処理基板としてフォトマスク基板１を例に挙げて説明したが、処理の対象とする基板の種類や用途に特に制限はない。また、フォトマスク基板１を洗浄する場合、そのフォトマスクの仕様や用途にも、特段の制限はない。たとえば、本発明の実施形態に係る基板処理装置１０や基板処理方法は、表示装置（液晶パネル、有機エレクトロルミネッセンスパネル等）製造用フォトマスク基板を処理する場合に好適に適用可能である。また、表示装置製造用フォトマスク基板としては、たとえば、一辺が３００〜２０００ｍｍ程度の四角形の主面をもち、厚みが５〜２０ｍｍ程度のフォトマスク基板を適用可能である。特に、パターンＣＤ（Ｃｒｉｔｉｃａｌ Ｄｉｍｅｎｓｉｏｎ）が微細（たとえば、ＣＤ＝３μｍ以下、或いは１〜３μｍ程度）のホールパターン、Ｌ／Ｓ（ライン／スペース）パターンを有する表示装置用フォトマスク基板に適用すると、効果が顕著である。これらのフォトマスク基板は、ＦＰＤ用の露光装置（ｉ線、ｈ線、ｇ線のいずれか、又は全てを含む光源を有し、光学系のＮＡ（開口数）が０．０８〜０．１５程度のプロジェクション露光装置、又は同様の光源をもつプロキシミティ露光装置など）によって、被転写体上に、その転写用パターンを転写することができる。 In the above-described embodiment, the photomask substrate 1 is described as an example of the substrate to be processed by the substrate processing apparatus 10 or the substrate processing method, but is particularly limited to the type and application of the substrate to be processed. There is no. Further, when the photomask substrate 1 is cleaned, there are no particular restrictions on the specifications and applications of the photomask. For example, the substrate processing apparatus 10 and the substrate processing method according to the embodiment of the present invention are preferably applicable when processing a photomask substrate for manufacturing a display device (liquid crystal panel, organic electroluminescence panel, etc.). Moreover, as a photomask substrate for manufacturing a display device, for example, a photomask substrate having a rectangular main surface with a side of about 300 to 2000 mm and a thickness of about 5 to 20 mm is applicable. In particular, the present invention is effective when applied to a photomask substrate for a display device having a hole pattern or L / S (line / space) pattern having a fine pattern CD (Critical Dimension) (for example, CD = 3 μm or less, or about 1 to 3 μm). Is remarkable. These photomask substrates have an FPD exposure apparatus (a light source including any or all of i-line, h-line, and g-line), and an optical system NA (numerical aperture) of 0.08 to 0.15. The transfer pattern can be transferred onto the transfer object by a projection exposure apparatus of a degree or a proximity exposure apparatus having a similar light source.
本発明は、上記実施形態に係る基板処理方法を含む、フォトマスク製造方法として実現することができるし、上記裏面洗浄工程及び膜面洗浄工程を有するフォトマスク洗浄方法を含む、フォトマスク製造方法として実現することもできる。 The present invention can be realized as a photomask manufacturing method including the substrate processing method according to the above embodiment, and as a photomask manufacturing method including the photomask cleaning method including the back surface cleaning step and the film surface cleaning step. It can also be realized.
フォトマスク製造方法は、たとえば以下の工程を有する。
フォトマスクの主面に、少なくとも１層の光学膜（たとえば遮光膜）を形成し、更にフォトレジスト膜を塗布形成した、レジスト付フォトマスクブランクを用意する工程。
レーザや電子線を用いた描画装置を用い、得ようとするデバイスの設計に基づくパターンデータを、フォトマスクブランクに対して描画する工程。
描画済みのフォトレジスト膜を現像し、レジストパターンを形成する工程。
形成したレジストパターンをエッチングマスクとして、上記光学膜をドライエッチング又はウェットエッチングでエッチングし、転写用パターンを形成する工程。
形成した転写用パターンの検査を行い、必要に応じて、パターンの欠陥修正を行なう工程。
これらの工程のいずれかの段階で、本発明の実施形態に係る基板処理方法やフォトマスク洗浄方法を適用することが可能である。
The photomask manufacturing method includes, for example, the following steps.
A step of preparing a photomask blank with a resist, in which at least one optical film (for example, a light-shielding film) is formed on the main surface of the photomask and a photoresist film is further applied and formed.
A step of drawing pattern data based on the design of a device to be obtained on a photomask blank using a drawing apparatus using a laser or an electron beam.
A step of developing a drawn photoresist film to form a resist pattern.
A step of forming a transfer pattern by etching the optical film by dry etching or wet etching using the formed resist pattern as an etching mask.
A process of inspecting the formed transfer pattern and correcting the pattern defect as necessary.
The substrate processing method and the photomask cleaning method according to the embodiment of the present invention can be applied at any stage of these steps.
１…フォトマスク基板
２，３…主面
１０…基板処理装置
１１…ホルダ
１２…クランプ部材
１３…駆動手段
１４…スクラブ材
１５…スクラブ移動手段
１６…上面側処理液供給手段
１７…下面側処理液供給手段
DESCRIPTION OF SYMBOLS 1 ... Photomask substrate 2, 3 ... Main surface 10 ... Substrate processing apparatus 11 ... Holder 12 ... Clamp member 13 ... Driving means 14 ... Scrub material 15 ... Scrub moving means 16 ... Upper surface side processing liquid supply means 17 ... Lower surface side processing liquid Supply means
Claims (12)
前記基板の主面を水平にした状態で、前記基板を下向き面側から支承する支承部材と、
前記支承部材に支承された前記基板の外縁部の一部を、対向する２方向から挟んで前記基板を保持するクランプ部材と、
前記クランプ部材に保持された基板を前記支承部材から離間させるために、前記支承部材と前記クランプ部材の少なくとも一方を鉛直方向に移動させる駆動手段と、
前記離間により形成された空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させるスクラブ移動手段と、
前記基板の下向き面に処理液を供給する処理液供給手段と、
を有する、基板処理装置。 A substrate processing apparatus for processing a downward surface of a substrate with a processing liquid,
With the main surface of the substrate horizontal, a support member for supporting the substrate from the downward surface side;
A clamp member for holding the substrate by sandwiching a part of the outer edge of the substrate supported by the support member from two opposing directions;
Drive means for moving at least one of the support member and the clamp member in a vertical direction to separate the substrate held by the clamp member from the support member;
A scrub moving means for moving the scrub material along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate within the space formed by the separation;
Treatment liquid supply means for supplying a treatment liquid to the downward surface of the substrate;
A substrate processing apparatus.
前記基板の四角形の主面を水平にした状態で、前記基板を下向き面側から支承部材で支承することにより、前記基板をセットする工程と、
前記基板の主面の相対向する二辺にある基板外縁部の一部を、それぞれクランプ保持する保持工程と、
前記クランプ保持された前記基板と前記支承部材の少なくとも一方を鉛直方向に移動させることにより、前記基板の下向き面と前記支承部材を離間する離間工程と、
前記下向き面に、前記処理液を供給するとともに、前記離間によって形成された空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させることにより、前記基板の下向き面を処理液によって処理する処理工程と、
を有する、基板処理方法。 A substrate processing method for processing a downward surface of a substrate with a processing liquid,
A step of setting the substrate by supporting the substrate with a supporting member from a downward surface side in a state where the rectangular main surface of the substrate is horizontal;
A holding step of clamping and holding a part of the substrate outer edge portion on two opposite sides of the main surface of the substrate;
A separation step of separating the downward surface of the substrate and the support member by moving at least one of the substrate held by the clamp and the support member in a vertical direction;
The processing liquid is supplied to the downward surface, and the scrub material is moved along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate in the space formed by the separation. A processing step of processing the downward surface of the substrate with a processing liquid;
A substrate processing method.
前記基板の四角形の主面を水平にした状態で、前記基板を下向き面側から支承部材で支承することにより、前記基板をセットする工程と、
前記基板の主面の相対向する二辺にある基板外縁部の一部を、それぞれクランプ保持する第１保持工程と、
前記クランプ保持された前記基板と前記支承部材の少なくとも一方を鉛直方向に移動させることにより、前記基板の下向き面と前記支承部材を離間する離間工程と、
前記下向き面に、前記処理液を供給するとともに、前記離間によって形成された空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させることにより、前記基板の下向き面を処理液によって処理する第１処理工程と、
前記二辺にある基板外縁部をクランプ保持から解放し、前記二辺と異なる二辺にある基板外縁部の一部を、それぞれクランプ保持する第２保持工程と、
前記下向き面に、前記処理液を供給するとともに、前記空間内で、前記基板の下向き面にスクラブ材を接触させつつ、前記スクラブ材を前記基板の下向き面に沿って移動させることにより、前記基板の下向き面を処理液によって処理する第２処理工程と、
を有する、基板処理方法。 A substrate processing method for processing a downward surface of a substrate with a processing liquid,
A step of setting the substrate by supporting the substrate with a supporting member from a downward surface side in a state where the rectangular main surface of the substrate is horizontal;
A first holding step of clamping and holding a part of the substrate outer edge portion on two opposite sides of the main surface of the substrate;
A separation step of separating the downward surface of the substrate and the support member by moving at least one of the substrate held by the clamp and the support member in a vertical direction;
The processing liquid is supplied to the downward surface, and the scrub material is moved along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate in the space formed by the separation. A first processing step of processing the downward surface of the substrate with a processing liquid;
A second holding step of releasing the substrate outer edge portion on the two sides from the clamp holding, and clamping and holding a part of the substrate outer edge portion on the two sides different from the two sides;
The substrate is provided by supplying the processing liquid to the downward surface and moving the scrub material along the downward surface of the substrate while contacting the scrub material with the downward surface of the substrate in the space. A second treatment step of treating the downward surface of the substrate with the treatment liquid;
A substrate processing method.
前記フォトマスク基板の膜面を上側にした状態で、前記フォトマスク基板の膜面を洗浄する膜面洗浄工程と、を有し、
前記裏面洗浄工程と前記膜面洗浄工程との間に、前記フォトマスク基板を上下反転させる工程を有しない、フォトマスク洗浄方法。 A back surface cleaning step of cleaning the back surface of the photomask substrate by the substrate processing method according to claim 4;
A film surface cleaning step of cleaning the film surface of the photomask substrate with the film surface of the photomask substrate facing upward,
A photomask cleaning method, which does not include a step of turning the photomask substrate upside down between the back surface cleaning step and the film surface cleaning step.
A photomask manufacturing method comprising the photomask cleaning method according to claim 10.
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