JP2019016658A5 - - Google Patents
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- JP2019016658A5 JP2019016658A5 JP2017131656A JP2017131656A JP2019016658A5 JP 2019016658 A5 JP2019016658 A5 JP 2019016658A5 JP 2017131656 A JP2017131656 A JP 2017131656A JP 2017131656 A JP2017131656 A JP 2017131656A JP 2019016658 A5 JP2019016658 A5 JP 2019016658A5
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- insulating substrate
- solder
- semiconductor element
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- metal block
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- 229910000679 solder Inorganic materials 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 63
- 230000003287 optical Effects 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000005201 scrubbing Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000000919 ceramic Substances 0.000 description 33
- 241000013987 Colletes Species 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Description
次に、溝３１の長さ方向について説明する。図２中（ｂ）で示すように、セラミック基板２を溝３１内で接合する時、Ｓ１方向にスクラブ動作するため、溝３１の長さ方向のサイズはセラミック基板２の長さに加えてスクラブ動作させる寸法分以上に長くする必要がある。例えば、幅が１．０ｍｍ、長さが１．５ｍｍのセラミック基板２の組立公差が±０．１ｍｍで、長さ方向に０．１ｍｍスクラブ動作させる場合、溝３１の長さ方向のサイズは１．９ｍｍ以上とするのが好ましい。またはんだを濡れ拡がらせるために、スクラブ動作させる寸法はスクラブ動作させる部材のスクラブ動作方向の寸法の５％以上程度とするのが好ましい。
また、溝３１内に接合されたセラミック基板２の接合面と対向する面には、図１で示すように半導体レーザチップ１がはんだ７によって接合される。この接合時に、半導体レーザチップ１はスクラブ動作するため、この半導体レーザチップ１を保持する治具であるコレットが溝３１の壁面に当たらないよう、溝３１の深さはセラミック基板２の厚さより浅くするのが好ましい。さらに、セラミック基板２を溝３１にはんだ接合する時に、セラミック基板２をセラミック基板２より大きいコレットで保持する場合、セラミック基板２を保持するコレットが金属ブロック３の主面に当たらないよう、溝３１の深さはセラミック基板２のコレットで覆われていない部分の厚さより浅くするのが好ましい。
Next, the length direction of the groove 31 will be described. As shown in FIG. 2B, when the ceramic substrate 2 is joined in the groove 31, a scrub operation is performed in the S1 direction. Therefore, the size of the groove 31 in the longitudinal direction is the same as the length of the ceramic substrate 2 in addition to the scrub. It is necessary to make it longer than the size to operate. For example, when the assembly tolerance of the ceramic substrate 2 having a width of 1.0 mm and a length of 1.5 mm is ± 0.1 mm and the scrubbing operation is performed by 0.1 mm in the length direction, the size of the groove 31 in the length direction is 1. It is preferable that it is not less than 9 mm. Further, in order to wet and spread the solder, it is preferable that the size of the scrubbing operation is about 5% or more of the size of the member to be scrubbed in the scrubbing operation direction.
Further, as shown in FIG. 1, the semiconductor laser chip 1 is joined by solder 7 to the surface of the ceramic substrate 2 which is joined in the groove 31 and which faces the joining surface. Since the semiconductor laser chip 1 performs a scrubbing operation at the time of this bonding, the depth of the groove 31 is shallower than the thickness of the ceramic substrate 2 so that the collet, which is a jig for holding the semiconductor laser chip 1, does not hit the wall surface of the groove 31. Preferably. Furthermore, when holding the ceramic substrate 2 with a collet larger than the ceramic substrate 2 when soldering the ceramic substrate 2 to the groove 31, the groove 31 is provided so that the collet holding the ceramic substrate 2 does not hit the main surface of the metal block 3. It is preferable that the depth of is smaller than the thickness of the portion of the ceramic substrate 2 not covered with the collet.
例えば、幅が１．０ｍｍ、長さが１．５ｍｍ、厚さが０．３ｍｍのセラミック基板２を用いて、このセラミック基板２より大きいコレットでセラミック基板２の表面から０．１ｍｍまで保持し、片側１．０ｍｍスクラブ動作させてはんだ接合する場合、溝３１は幅を１．０ｍｍ、長さを２．５ｍｍより大きく、深さを０．２ｍｍより浅くするのが好ましい。さらには、例えば溝３１の深さを０．１ｍｍより浅くして、コレットおよび溝３１で周囲を覆われていないセラミック基板２の側面の厚さが０．１ｍｍ以上程度確保できるようにすることで、コレットが多少傾いてもコレットの先端が金属ブロック３の主面に接触しなくなるため、より好ましい。 For example, a ceramic substrate 2 having a width of 1.0 mm, a length of 1.5 mm and a thickness of 0.3 mm is used, and a collet larger than the ceramic substrate 2 holds the ceramic substrate 2 up to 0.1 mm from the surface, When performing a soldering operation by scrubbing 1.0 mm on one side, the groove 31 preferably has a width of 1.0 mm, a length of more than 2.5 mm, and a depth of less than 0.2 mm. Further, for example, by making the depth of the groove 31 shallower than 0.1 mm, the thickness of the side surface of the ceramic substrate 2 which is not covered with the collet and the groove 31 can be ensured to be about 0.1 mm or more. Even if the collet is slightly inclined, the tip of the collet does not come into contact with the main surface of the metal block 3 , which is more preferable.
次にはんだ６、はんだ７、はんだ８について説明する。
はんだ６はセラミック基板２の一方の面に形成された電極パターン２１ｂと金属ブロック３に設けられた溝３１の底面との接合に用いられる。はんだ６によってセラミック基板２が接合される時は、金属ブロック３はサーモモジュール４にはんだ８によって接合されている。よって、はんだ６の材料は、はんだ６の接合時にはんだ８が再溶融しないように、融点がはんだ８より低く、熱伝導率の大きい金属が好ましい。そのため、はんだは、一般的にはＳｎ、Ｐｂ、Ａｕ、Ａｇ、Ｃｕ、Ｚｎ、Ｎｉ、Ｓｂ、Ｂｉ、Ｉｎ、Ｇｅ等を含有し、その融点が４５０℃未満の合金が用いられるが、はんだ６には、主にＳｎにＡｇやＣｕ等を含有し、その融点が２５０℃未満の合金を用いるのが好ましい。また、はんだ６の接合後の厚さは放熱性の観点から、０．３ｍｍ以下とするのが好ましい。さらには０．１ｍｍ以下とするのがより好ましい。
Next, the solder 6, the solder 7, and the solder 8 will be described.
The solder 6 is used for joining the electrode pattern 21b formed on one surface of the ceramic substrate 2 and the bottom surface of the groove 31 provided in the metal block 3. When the ceramic substrate 2 is joined by the solder 6, the metal block 3 is joined by the solder 8 to the thermo module 4. Therefore, the material of the solder 6 is preferably a metal having a lower melting point and a higher thermal conductivity than the solder 8 so that the solder 8 is not remelted when the solder 6 is joined. Therefore, the solder generally contains Sn, Pb, Au, Ag, Cu, Zn, Ni, Sb, Bi, In, Ge and the like, and an alloy having a melting point of less than 450 ° C. is used. It is preferable to use an alloy mainly containing Sn, Ag, Cu or the like and having a melting point of less than 250 ° C. In addition, the thickness of the solder 6 after joining is preferably 0.3 mm or less from the viewpoint of heat dissipation. Furthermore, it is more preferable that the thickness is 0.1 mm or less.
はんだ７はセラミック基板２の他方の面に形成された電極パターン２１ａと半導体レーザチップ１との接合に用いられる。はんだ７によって半導体レーザチップ１が接合される時は、セラミック基板２は金属ブロック３にはんだ６によって接合されており、金属ブロック３はサーモモジュール４にはんだ８によって接合されている。よって、はんだ７の材料は、はんだ６と同様に、はんだ７の接合時にはんだ８が再溶融しないように、融点がはんだ８より低く、熱伝導率の大きい金属が好ましい。この時、はんだ６は再溶融しても全く問題ない。そのためはんだ７も、主にＳｎにＡｇやＣｕ等を含有し、その融点が２５０℃未満の合金を用いるのが好ましい。はんだ６と全く同じ材料を用いてもよい。また、はんだ７の接合後の厚さは放熱性の観点から、はんだ６と同様に、０．３ｍｍ以下とするのが好ましい。さらには０．１ｍｍ以下とするのがより好ましい。 The solder 7 is used for joining the electrode pattern 21 a formed on the other surface of the ceramic substrate 2 and the semiconductor laser chip 1. When the semiconductor laser chip 1 is joined by the solder 7, the ceramic substrate 2 is joined by the solder 6 to the metal block 3, and the metal block 3 is joined by the solder 8 to the thermo module 4. Therefore, like the solder 6, the material of the solder 7 is preferably a metal having a lower melting point and a higher thermal conductivity than the solder 8 so that the solder 8 does not remelt when the solder 7 is joined. At this time, there is no problem even if the solder 6 is remelted. Therefore, the solder 7 is also preferably made of an alloy mainly containing Ag, Cu, etc. in Sn and having a melting point of less than 250 ° C. The same material as the solder 6 may be used. The thickness of the solder 7 after joining is preferably 0.3 mm or less from the viewpoint of heat dissipation, like the solder 6. Furthermore, it is more preferable that the thickness is 0.1 mm or less.
以上のように構成された本実施の形態１に係る光モジュール１０１の効果について説明する。
ここでは、はんだ６およびはんだ７を溶融してはんだ接合するため、サーモモジュール４の底面からのホットプレートによる全体加熱を行うものとする。
金属ブロック３の主面のセラミック基板２がはんだ６によって接合される位置に、セラミック基板２より大きく、少なくとも幅の一部がセラミック基板２の幅と略等しい溝３１を設けることで、はんだ６とはんだ７に融点が同程度のはんだを用いても、はんだ接合時にセラミック基板２を溝３１の長さ方向へ、半導体レーザチップ１を溝３１の幅方向へスクラブ動作することができる。一方、少なくとも幅の一部がセラミック基板２の幅と略等しい、すなわち幅方向の余裕がセラミック基板２の組立公差以下であるので、半導体レーザチップ１を溝３１の幅方向へスクラブ動作時にはセラミック基板２は幅方向には固定されている。これによって、各工程でのはんだ接合時にスクラブ動作が可能となり、はんだ表面の酸化被膜を除去して、はんだを確実にお互いの部材に濡れ広がらせて確実にはんだ接合することができる。加えて、はんだ内の気泡も除去できるため、はんだボイドを低減することができる。したがって、信頼性が高く熱抵抗の小さい、高品質なはんだ接合部を得ることができる。
The effects of the optical module 101 according to the first embodiment configured as above will be described.
Here, since the solder 6 and the solder 7 are melted and solder-joined, the entire heating by the hot plate from the bottom surface of the thermo module 4 is performed.
By providing a groove 31 that is larger than the ceramic substrate 2 and has a width at least partially equal to the width of the ceramic substrate 2 at a position where the ceramic substrate 2 on the main surface of the metal block 3 is joined by the solder 6, Even when the solder having the same melting point is used as the solder 7, the ceramic substrate 2 can be scrubbed in the length direction of the groove 31 and the semiconductor laser chip 1 can be scrubbed in the width direction of the groove 31 at the time of solder joining. On the other hand, at least a part of the width is substantially equal to the width of the ceramic substrate 2 , that is, the margin in the width direction is less than or equal to the assembly tolerance of the ceramic substrate 2, so the semiconductor laser chip 1 is scrubbed in the width direction of the groove 31 when the ceramic substrate is scrubbed. 2 is fixed in the width direction. As a result, a scrubbing operation can be performed at the time of solder joining in each step, the oxide film on the solder surface can be removed, and the solder can be surely wetted and spread on the respective members for reliable solder joining. In addition, since bubbles in the solder can be removed, solder voids can be reduced. Therefore, it is possible to obtain a high-quality solder joint having high reliability and low thermal resistance.
また、開口部５１は実施の形態１の溝３１と同様、図３Ａ〜図３Ｉで示したように、幅方向の少なくとも一部がセラミック基板２の幅と略等しくなるように形成されていればよい。開口部５１は貫通していなくても、溝形状であってもよい。開口部５１が金属プレート５を貫通している場合、熱抵抗の増加を防止することができだけでなく、金属ブロック３に対し開口部５１の壁面を容易に垂直に形成でき、セラミック基板２を金属ブロック３に接合する時、開口部５１の内壁面にセラミック基板２が接することでセラミック基板２が傾くことなく位置決めできる。
実施の形態１と同様に、セラミック基板２が開口部５１内で開口部５１の長さ方向にスクラブ動作されてはんだ６により接合され、その後、半導体レーザチップ１が開口部５１の幅方向にスクラブ動作されながらはんだ７により接合される。
このように、半導体レーザチップ１の接合時に、開口部５１の幅方向にスクラブ動作が行われても、セラミック基板２は開口部５１の幅で固定され、実施の形態１の金属ブロック３に溝３１を設けた場合と同様、はんだ接合工程が簡便となり、組み立て精度の高い、信頼性の高い光モジュールを提供できるという効果を得ることができる。
加えて、このように構成することで、製品の種類ごとに光軸の位置が異なっていても、金属プレート５を適宜取り換えることで全て同じ金属ブロック３を用いることができるため、より好ましい。
Further, as in the groove 31 of the first embodiment, the opening 51 may be formed so that at least a part in the width direction is substantially equal to the width of the ceramic substrate 2, as shown in FIGS. 3A to 3I. Good. The opening 51 does not have to penetrate, and may have a groove shape. When the opening 51 penetrates the metal plate 5, not only an increase in thermal resistance can be prevented, but also the wall surface of the opening 51 can be easily formed perpendicular to the metal block 3, and the ceramic substrate 2 can be formed. When the ceramic substrate 2 is joined to the metal block 3, the ceramic substrate 2 contacts the inner wall surface of the opening 51, so that the ceramic substrate 2 can be positioned without tilting.
Similar to the first embodiment, the ceramic substrate 2 is scrubbed in the opening 51 in the length direction of the opening 51 and joined by the solder 6, and then the semiconductor laser chip 1 is scrubbed in the width direction of the opening 51. It is joined by the solder 7 while being operated.
As described above, when the semiconductor laser chip 1 is bonded, even if the scrubbing operation is performed in the width direction of the opening 51, the ceramic substrate 2 is fixed by the width of the opening 51 and the metal block 3 of the first embodiment is provided with the groove. Similar to the case where 31 is provided, it is possible to obtain the effect that the solder joining process is simplified and an optical module with high assembly accuracy and high reliability can be provided.
In addition, with such a configuration, even if the position of the optical axis differs depending on the type of product, the same metal block 3 can be used by appropriately replacing the metal plate 5, which is more preferable.
さらに、開口部５１の長さ方向を半導体レーザチップ１の光軸の方向と平行となるように設けることで、セラミック基板２の搭載位置精度を向上し、組立て時および動作時の半導体レーザチップ１の光軸の位置ずれを抑制することができる。
その結果、高品質なはんだ接合部を備えた信頼性の高い、安価な光モジュールを得ることができる。
Further, by providing the opening 51 so that the longitudinal direction thereof is parallel to the optical axis direction of the semiconductor laser chip 1, the mounting position accuracy of the ceramic substrate 2 is improved, and the semiconductor laser chip 1 during assembly and operation is improved. The positional deviation of the optical axis can be suppressed.
As a result, it is possible to obtain a highly reliable and inexpensive optical module having a high quality solder joint.
Claims (9)
前記金属ブロックに形成され、前記絶縁基板の外形より大きい溝であって、少なくとも幅の一部が前記絶縁基板の幅と略等しい溝に、第一のはんだを挟んで前記絶縁基板を配置し、
前記絶縁基板を前記溝の長さ方向にスクラブ動作を行いはんだ接合し、
前記絶縁基板に第二のはんだを挟んで前記光半導体素子を配置し、
前記光半導体素子を上記溝の幅方向にスクラブ動作を行いはんだ接合する、ことを特徴とする光モジュールの製造方法。 A method for manufacturing an optical module, in which an insulating substrate and an optical semiconductor element are sequentially soldered on a metal block,
A groove that is formed in the metal block and is larger than the outer shape of the insulating substrate, at least a part of the width of which is substantially equal to the width of the insulating substrate, and the insulating substrate is arranged with the first solder interposed therebetween.
Scrubbing the insulating substrate in the length direction of the groove for solder joining,
Arranging the optical semiconductor element sandwiching the second solder on the insulating substrate,
A method of manufacturing an optical module, characterized in that the optical semiconductor element is subjected to a scrubbing operation in the width direction of the groove to perform solder bonding.
前記金属ブロックの上に、開口部が前記絶縁基板の外形より大きい開口部であって、少なくとも幅の一部が前記絶縁基板の幅と略等しい開口部を有する金属プレートを接合し、
前記開口部に第一のはんだを挟んで前記絶縁基板を配置し、
前記絶縁基板を前記開口部の長さ方向にスクラブ動作を行いはんだ接合し、
前記絶縁基板に第二のはんだを挟んで前記光半導体素子を配置し、
前記光半導体素子を上記開口部の幅方向にスクラブ動作を行いはんだ接合する、ことを特徴とする光モジュールの製造方法。 A method for manufacturing an optical module, in which an insulating substrate and an optical semiconductor element are sequentially soldered on a metal block,
On the metal block, a metal plate having an opening whose opening is larger than the outer shape of the insulating substrate and at least a part of the width of which is substantially equal to the width of the insulating substrate is joined,
Arranging the insulating substrate with the first solder sandwiched in the opening,
Scrubbing the insulating substrate in the length direction of the opening for solder joining,
Arranging the optical semiconductor element sandwiching the second solder on the insulating substrate,
A method for manufacturing an optical module, characterized in that the optical semiconductor element is subjected to a scrubbing operation in the width direction of the opening to perform solder bonding.
形状が前記絶縁基板の外形より大きく、少なくとも幅の一部が前記絶縁基板の幅と略等しい形状を有するダムが設けられた前記金属ブロックのダム内に、第一のはんだを挟んで前記絶縁基板を配置し、
前記絶縁基板を前記ダムの長さ方向にスクラブ動作を行いはんだ接合し、
前記絶縁基板に第二のはんだを挟んで前記光半導体素子を配置し、
前記光半導体素子を上記ダムの幅方向にスクラブ動作を行いはんだ接合する、ことを特徴とする光モジュールの製造方法。 A method for manufacturing an optical module, in which an insulating substrate and an optical semiconductor element are sequentially soldered on a metal block,
The insulating substrate is sandwiched by a first solder in a dam of the metal block in which a dam having a shape larger than the outer shape of the insulating substrate and at least a part of the width of which is substantially equal to the width of the insulating substrate is provided. Place
The insulating substrate is soldered by performing a scrubbing operation in the length direction of the dam,
Arranging the optical semiconductor element sandwiching the second solder on the insulating substrate,
A method for manufacturing an optical module, characterized in that the optical semiconductor element is subjected to a scrubbing operation in the width direction of the dam to be soldered.
前記金属ブロックに形成された溝部に第一のはんだを介して接合された絶縁基板と、
前記絶縁基板に第二のはんだを介して接合された光半導体素子と、を備え、
前記金属ブロックの溝部は、前記絶縁基板の外形より大きい溝であって、少なくとも幅の一部が前記絶縁基板の幅と略等しく、長さ方向は前記光半導体素子の光軸方向となるように形成された、ことを特徴とする光モジュール。 A metal block,
An insulating substrate joined to the groove formed in the metal block via the first solder,
An optical semiconductor element joined to the insulating substrate via a second solder,
The groove portion of the metal block is a groove larger than the outer shape of the insulating substrate, at least a part of the width of which is substantially equal to the width of the insulating substrate, and the length direction is the optical axis direction of the optical semiconductor element. An optical module, which is formed.
前記金属ブロックに接合され、開口部を有する金属プレートと、
前記開口部で第一のはんだを介して前記金属ブロックと接合された絶縁基板と、
前記絶縁基板に第二のはんだを介して接合された光半導体素子と、を備え、
前記金属プレートの開口部は、前記絶縁基板の外形より大きい開口部であって、少なくとも幅の一部が前記絶縁基板の幅と略等しく、長さ方向は前記光半導体素子の光軸方向となるように形成された、ことを特徴とする光モジュール。 A metal block,
A metal plate joined to the metal block and having an opening;
An insulating substrate joined to the metal block via the first solder in the opening,
An optical semiconductor element joined to the insulating substrate via a second solder,
The opening of the metal plate is larger than the outer shape of the insulating substrate, at least a part of the width is substantially equal to the width of the insulating substrate, and the length direction is the optical axis direction of the optical semiconductor element. An optical module, which is formed as described above.
前記金属ブロックのダム内に、第一のはんだを介して接合された絶縁基板と、
前記絶縁基板に第二のはんだを介して接合された光半導体素子と、を備え、
前記ダムの形状は、前記絶縁基板の外形より大きな形状であって、少なくとも幅の一部が前記絶縁基板の幅と略等しく、長さ方向は前記光半導体素子の光軸方向となるように形成された、ことを特徴とする光モジュール。 A metal block with a dam formed,
In the dam of the metal block, an insulating substrate joined via the first solder,
An optical semiconductor element joined to the insulating substrate via a second solder,
The shape of the dam is larger than the outer shape of the insulating substrate, at least a part of the width is substantially equal to the width of the insulating substrate, and the length direction is formed to be the optical axis direction of the optical semiconductor element. The optical module characterized in that
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| JPS62140484A (en) * | 1985-12-16 | 1987-06-24 | Hitachi Ltd | Optical semiconductor device |
| JP2622029B2 (en) * | 1990-05-18 | 1997-06-18 | 株式会社東芝 | Semiconductor light emitting device |
| JP3183247B2 (en) * | 1998-02-27 | 2001-07-09 | 日本電気株式会社 | Semiconductor laser module |
| JP2000068583A (en) * | 1998-08-18 | 2000-03-03 | Mitsubishi Electric Corp | Semiconductor laser |
| JP2000349099A (en) * | 1999-06-07 | 2000-12-15 | Toshiba Corp | Method of bonding with solder and manufacture of semiconductor device |
| JP2004325826A (en) * | 2003-04-25 | 2004-11-18 | Fuji Photo Film Co Ltd | Fixing method and fixed structure of optical member |
| US20060018355A1 (en) * | 2004-07-23 | 2006-01-26 | Comlasc.Nt-Ab | Laser diode arrays with reduced heat induced strain and stress |
| JP2010161159A (en) * | 2009-01-07 | 2010-07-22 | Calsonic Kansei Corp | Die bonding method for bare chip, and bare chip mounting component |
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