JP2018533845A - 加工基板上のチップスケールパッケージの固体デバイス用のリフトオフ工程 - Google Patents
加工基板上のチップスケールパッケージの固体デバイス用のリフトオフ工程 Download PDFInfo
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- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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Abstract
Description
[0001]本出願は、2016年10月7日に出願された米国非仮特許出願第15/288,506号、および2015年10月19日に出願された米国仮特許出願第62/243,540号の利益を主張するものであり、その内容はその全体が参照により組み込まれる。
134とp−GaN層140との間にそれぞれ電圧を印加することにより、MQW領域136にキャリアが注入され、発光を引き起こす。
Claims (20)
- 加工基板構造体を処理する方法であって、前記方法は、
多結晶基板と、
前記多結晶基板を封止する加工層と
を含む加工基板構造体を提供することと、
前記加工層に結合された犠牲層を形成することと、
前記犠牲層に固体デバイス構造体を接合することと、
前記固体デバイス構造体の1つ以上の部分を除去して前記犠牲層の1つ以上の部分を露出することによって前記固体デバイス構造体内に1つ以上のチャネルを形成することと、
エッチング薬液を前記1つ以上のチャネルを通って前記犠牲層の前記1つ以上の露出部まで流すことと、
前記エッチング薬液と前記犠牲層との間の相互作用によって前記犠牲層を溶解し、それにより前記固体デバイス構造体から前記加工基板構造体を分離することと
を含む、方法。 - 前記犠牲層は、チタン(Ti)、バナジウム(V)、クロム(Cr)、タンタル(Ta)、タングステン(W)、レニウム(Re)、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、またはこれらの組み合わせのうちの1つを含む、請求項1に記載の方法。
- 前記エッチング薬液は、フッ化水素酸(HF)または硫酸(H2SO4)を含む、請求項1に記載の方法。
- 前記多結晶基板は、多結晶窒化アルミニウムガリウム(AlGaN)、多結晶窒化ガリウム(GaN)、多結晶窒化アルミニウム(AlN)、炭化ケイ素(SiC)、またはこれらの組み合わせのうちの1つを含む、請求項1に記載の方法。
- 前記犠牲層に結合された結合層を形成することと、
前記結合層に結合された実質的に単結晶のシリコン層を形成することと、
前記実質的に単結晶のシリコン層に結合された窒化ガリウム(GaN)層を形成することと、
前記GaN層に結合された1つ以上の固体デバイスを形成することと、
によって前記固体デバイス構造体を形成することを更に含む、請求項4に記載の方法。 - 前記GaN層を形成することは、前記実質的に単結晶のシリコン層上に前記GaN層をエピタキシャル成長させることを含む、請求項5に記載の方法。
- 前記1つ以上の固体デバイスを形成することは、
エピタキシャル成長によって前記GaN層に結合されたN−GaN層を形成することと、
エピタキシャル成長によって前記N−GaN層に結合されたGaN系活性層を形成することと、
エピタキシャル成長によって前記GaN系活性層に結合されたP−GaN層を形成することと
を含む、請求項6に記載の方法。 - 前記1つ以上の固体デバイスを形成した後、かつ前記1つ以上のチャネルを形成する前に、前記固体デバイス構造体上にモールディング支持体を形成することを更に含む、請求項7に記載の方法。
- 前記1つ以上のチャネルの各々は、前記モールディング支持体、前記GaN層、前記実質的に単結晶のシリコン層、および前記結合層を通過する、請求項8に記載の方法。
- 加工基板構造体を処理する方法であって、前記方法は、
多結晶基板と、
前記多結晶基板を封止する加工層と
を含む加工基板構造体を提供することと、
前記加工層に結合された犠牲層を形成することであって、前記犠牲層が露出した周辺部を有する、前記犠牲層を形成することと、
前記犠牲層に固体デバイス構造体を接合することと、
前記犠牲層の前記露出した周辺部にエッチング薬液を塗布することと、
前記エッチング薬液と前記犠牲層との間の相互作用によって前記犠牲層を溶解し、それにより前記固体デバイス構造体から前記加工基板構造体を分離することと
を含む、方法。 - 前記犠牲層は、チタン(Ti)、バナジウム(V)、クロム(Cr)、タンタル(Ta)、タングステン(W)、レニウム(Re)、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、またはこれらの組み合わせのうちの1つを含む、請求項10に記載の方法。
- 前記エッチング薬液は、フッ化水素酸(HF)または硫酸(H2SO4)を含む、請求項10に記載の方法。
- 前記多結晶基板は、多結晶窒化アルミニウムガリウム(AlGaN)、多結晶窒化ガリウム(GaN)、多結晶窒化アルミニウム(AlN)、炭化ケイ素(SiC)、またはこれらの組み合わせのうちの1つを含む、請求項10に記載の方法。
- 前記犠牲層に結合された結合層を形成することと、
前記結合層に結合された実質的に単結晶のシリコン層を形成することと、
前記実質的に単結晶のシリコン層に結合された窒化ガリウム(GaN)層を形成することと、
前記GaN層に結合された1つ以上のGaN系デバイスを形成することと、
によって前記固体デバイス構造体を形成することを更に含む、請求項10に記載の方法。 - 前記1つ以上の固体デバイスを形成した後、かつ前記エッチング薬液を塗布する前に、前記固体デバイス構造体上にモールディング支持体を形成することを更に含む、請求項14に記載の方法。
- 加工基板構造体を処理する方法であって、前記方法は、
多結晶基板と、
前記多結晶基板を封止する加工層であって、露出した周辺部を有する前記加工層と
を含む加工基板構造体を提供することと、
前記加工層に固体デバイス構造体を接合することと、
前記加工層の前記露出した周辺部にエッチング薬液を塗布することと、
前記エッチング薬液と前記加工層との間の相互作用によって前記加工層を溶解し、それにより前記固体デバイス構造体から前記多結晶基板を分離することと
を含む、方法。 - 前記エッチング薬液は、フッ化水素酸(HF)または硫酸(H2SO4)を含む、請求項16に記載の方法。
- 前記多結晶基板は、多結晶窒化アルミニウムガリウム(AlGaN)、多結晶窒化ガリウム(GaN)、多結晶窒化アルミニウム(AlN)、炭化ケイ素(SiC)、またはこれらの組み合わせのうちの1つを含む、請求項16に記載の方法。
- 前記加工層は、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、またはこれらの組み合わせのうちの1つを含む、請求項16に記載の方法。
- 前記加工層に結合された結合層を形成することと、
前記結合層に結合された実質的に単結晶のシリコン層を形成することと、
前記実質的に単結晶のシリコン層に結合された窒化ガリウム(GaN)層をエピタキシャル成長させることと、
1つ以上のGaN系層のエピタキシャル成長によって前記GaN層に結合された1つ以上のGaN系デバイスを形成することと
によって前記固体デバイス構造体を形成することを更に含む、請求項18に記載の方法。
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