JP2018513570A - Jfetソースフォロアを有するイメージセンサ及びイメージセンサ画素 - Google Patents
Jfetソースフォロアを有するイメージセンサ及びイメージセンサ画素 Download PDFInfo
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- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 11
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 229910006405 Si—SiO Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/1463—Pixel isolation structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
本出願は、2015年3月31日に出願された米国仮特許出願第62/141,222号の利益を主張するものであり、この文献は、引用による組み入れが許可されている、又は禁止されていない各PCT加盟国及び加盟地域のために、その全体が引用により本明細書に組み入れられる。
11 n+ドープ領域
12 p+ドープ領域
14 p+ドープ領域
18 n型領域
20 p型領域
Claims (21)
- 複数の画素を備えたイメージセンサであって、少なくとも1つの画素が、
半導体基板内に形成された浮遊拡散領域と、
前記画素に蓄積された光電荷の前記浮遊拡散への移動を選択的に引き起こすように構成された移送ゲートと、
(i)チャネル領域によって結合されたソース及びドレインと、(ii)前記浮遊拡散領域を含むゲートとを有するJFETと、
を含むことを特徴とするイメージセンサ。 - 前記チャネル領域は、前記基板の表面に実質的に平行な横方向に沿って前記ソースと前記ドレインとの間を導通するように構成された第1の導電型の第1のドープ領域を含み、前記浮遊拡散領域は、前記第1の導電型とは反対の第2の導電型の第2のドープ領域を含み、前記浮遊拡散の前記第2のドープ領域は、前記ソースと前記ドレインとの間の前記横方向に沿って前記第1のドープ領域に隣接して該第1のドープ領域の下方に配置される、
請求項1に記載のイメージセンサ。 - 前記浮遊拡散及び前記チャネル領域は、前記移送ゲートの動作によって前記浮遊拡散へ選択的に移動した電荷が、前記チャネル領域を介して前記ソースと前記ドレインとの間の電流を変化させるように構成される、
請求項1又は2に記載のイメージセンサ。 - 前記浮遊拡散及び前記チャネル領域は、前記移送ゲートの動作によって前記浮遊拡散へ選択的に移動した電荷が、前記ゲートの電位に変化を引き起こした後に前記ソースの電位に変化を引き起こすように構成される、
請求項1又は2に記載のイメージセンサ。 - 前記浮遊拡散の容量は、少なくとも500μV/e−の変換利得をもたらすほど十分に小さく、前記イメージセンサは、QISとして構成される、
請求項1又は2に記載のイメージセンサ。 - 前記チャネルは、埋め込みチャネルとして構成される、
請求項1又は2に記載のイメージセンサ。 - 前記イメージセンサは、裏面照射型デバイスとして構成される、
請求項1又は2に記載のイメージセンサ。 - 前記移送ゲートは、前記浮遊拡散から離間して重ならない、
請求項1又は2に記載のイメージセンサ。 - 前記浮遊拡散は、リセットゲートを使用せずにリセットドレインを使用してリセットされるように構成される、
請求項1又は2に記載のイメージセンサ。 - 前記移送ゲートは、前記浮遊拡散から離間して重ならない、
請求項9に記載のイメージセンサ。 - 前記画素は、前記移送ゲートの実質的に下方に配置されて、前記移送ゲートを用いて前記浮遊拡散へ選択的に移動した前記光電荷を蓄えるように構成された電荷保存/蓄積領域を有するフォトダイオードを含む、
請求項1又は2に記載のイメージセンサ。 - 前記画素は、共有画素として構成される、
請求項1又は2に記載のイメージセンサ。 - 前記チャネルは、p型チャネルである、
請求項1又は2に記載のイメージセンサ。 - 複数の画素を備えたイメージセンサを提供する方法であって、
半導体基板内に浮遊拡散を形成するステップと、
前記画素に蓄積された光電荷の前記浮遊拡散への移動を選択的に引き起こすように構成された移送ゲートを形成するステップと、
前記半導体基板内に、(i)チャネル領域によって結合されたソース及びドレインと、(ii)前記浮遊拡散領域を含むゲートとを有するJFETを形成するステップと、
を含むことを特徴とする方法。 - 前記チャネル領域は、前記基板の表面に実質的に平行な横方向に沿って前記ソースと前記ドレインとの間を導通するように構成された第1の導電型の第1のドープ領域を含み、前記浮遊拡散領域は、前記第1の導電型とは反対の第2の導電型の第2のドープ領域を含み、前記浮遊拡散の前記第2のドープ領域は、前記ソースと前記ドレインとの間の前記横方向に沿って前記第1のドープ領域に隣接して該第1のドープ領域の下方に配置される、
請求項14に記載の方法。 - 前記浮遊拡散及び前記チャネル領域は、前記移送ゲートの動作によって前記浮遊拡散へ選択的に移動した電荷が、前記チャネル領域を介して前記ソースと前記ドレインとの間の電流を変化させるように構成される、
請求項14又は15に記載の方法。 - 前記浮遊拡散及び前記チャネル領域は、前記移送ゲートの動作によって前記浮遊拡散へ選択的に移動した電荷が、前記ゲートの電位に変化を引き起こした後に前記ソースの電位に変化を引き起こすように構成される、
請求項14又は15に記載の方法。 - 前記浮遊拡散の容量は、少なくとも500μV/e−の変換利得をもたらすほど十分に小さく、前記イメージセンサは、QISとして構成される、
請求項14又は15に記載の方法。 - 前記チャネルは、埋め込みチャネルとして構成される、
請求項14又は15に記載の方法。 - 前記移送ゲートは、前記浮遊拡散から離間して重ならない、
請求項14又は15に記載の方法。 - 前記浮遊拡散は、リセットゲートを使用せずにリセットドレインを使用してリセットされるように構成される、
請求項14又は15に記載の方法。
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PCT/US2016/025444 WO2016161214A1 (en) | 2015-03-31 | 2016-03-31 | Image sensor and image sensor pixel having jfet source follower |
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CN112565638B (zh) * | 2020-12-03 | 2022-09-30 | 天津大学合肥创新发展研究院 | 一种降低量子图像传感器子像素读出噪声的电路及方法 |
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CN108140653B (zh) | 2022-08-19 |
WO2016161214A1 (en) | 2016-10-06 |
EP3278364A4 (en) | 2018-12-19 |
JP2021106286A (ja) | 2021-07-26 |
EP3278364A1 (en) | 2018-02-07 |
JP2023095955A (ja) | 2023-07-06 |
EP3278364B1 (en) | 2021-05-26 |
US11764249B2 (en) | 2023-09-19 |
US20200105821A1 (en) | 2020-04-02 |
CN108140653A (zh) | 2018-06-08 |
US10340305B2 (en) | 2019-07-02 |
US20180090537A1 (en) | 2018-03-29 |
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