JP2018501656A - 微細線製造方法 - Google Patents
微細線製造方法 Download PDFInfo
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- JP2018501656A JP2018501656A JP2017532042A JP2017532042A JP2018501656A JP 2018501656 A JP2018501656 A JP 2018501656A JP 2017532042 A JP2017532042 A JP 2017532042A JP 2017532042 A JP2017532042 A JP 2017532042A JP 2018501656 A JP2018501656 A JP 2018501656A
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- G03F7/20—Exposure; Apparatus therefor
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- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
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- G03F7/004—Photosensitive materials
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- G03F7/004—Photosensitive materials
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- G03F7/004—Photosensitive materials
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- G03F7/004—Photosensitive materials
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
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- H05K2201/01—Dielectrics
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Abstract
Description
(i) 正面(100a)および裏面(100b)を有する透明基板(100)を提供し、
(ii) 基板(100)の正面(100a)上に遮光活性化層(101)のパターンを提供し、
(iii) 遮光活性化層(101)のパターンを含む基板(100)の正面(100a)上に感光性組成物(102)を配置し、
(iv) 電磁放射線の供給源で基板(100)の裏面(100b)から感光性組成物(102)を光硬化させ、
(v) 感光性組成物の未硬化残存物(102a)を除去し、それによって、遮光活性化層(101)のパターンの上に凹部構造(104)を選択的に露出させ、
(vi) このように形成された凹部構造(104)内へ無電解めっきにより少なくとも1つの金属または金属合金(105)を堆積させる、
各ステップを含む。
Opti−tec 5013 (Cygnet Electronics Ltd.社からのもの)
n=1.54
Loctite 3192TM (Henkel AG&Co.KG社からのもの)
n=1.50
Loctite 3193HSTM (Henkel AG&Co.KG社からのもの)
n=1.52
Loctite 3194TM (Henkel AG&Co.KG社からのもの)
n=1.52
Loctite 3195TM (Henkel AG&Co.KG社からのもの)
n=1.52
である。
(vii) 凹部構造(104)内への少なくとも1つの金属または金属合金(105)の堆積の後、光硬化された樹脂層(103)を除去し(ストリッピングし)、それによって、形成された金属または金属合金堆積物(105)を露出させる、
ことを含む。
(ii.a) 当該基板(300)の正面(300a)の少なくとも一部分の上に処理溶液(302)を堆積させ、
(ii.b) 当該基板(300)の正面(300a)上の先に堆積させた処理溶液(302)の少なくとも一部分をレーザーで選択的に硬化させ、それによって、遮光活性化層(301)のパターンを形成し、
(ii.c) 基板(300)から処理溶液(302)の未硬化残存物を除去する、
ことによって実施する。
Claims (15)
- 与えられた順序で、以下の各ステップ、すなわち、
(i) 正面(100a)および裏面(100b)を有する透明基板(100)を提供し、
(ii) 基板(100)の正面(100a)上に遮光活性化層(101)のパターンを提供し、
(iii) 遮光活性化層(101)のパターンを含む基板(100)の正面(100a)上に感光性組成物(102)を配置し、
(iv) 電磁放射線の供給源で基板(100)の裏面(100b)から感光性組成物(102)を光硬化させ、
(v) 感光性組成物の未硬化残存物(102a)を除去し、それによって、遮光活性化層(101)のパターンの上に凹部構造(104)を選択的に露出させ、
(vi) このように形成された凹部構造(104)内へ無電解めっきプロセスにより少なくとも1つの金属または金属合金(105)を堆積させる、
各ステップを含むことを特徴とする、透明基板上への微細線回路の製造のためのプロセス。 - ステップ(ii)における遮光活性化層のパターンは、基板(100)の正面(100a)上に処理溶液を堆積させることによって提供され、処理溶液は、少なくとも1つの導電性で不透明の粒子またはその前駆物質および少なくとも1つの溶媒を含むことを特徴とする請求項1記載のプロセス。
- 処理溶液は、導電性で不透明の粒子として、銅またはパラジウムを含むことを特徴とする請求項2記載のプロセス。
- ステップ(ii)において形成される遮光活性化層(301)のパターンは、与えられた順序で、ステップ(iia)〜(iic)によって、すなわち、
(ii.a) 基板(300)の正面(300a)の少なくとも一部分の上に処理溶液(302)を堆積させ、
(ii.b) 基板(300)の正面(300a)上の先に堆積させた処理溶液(302)の少なくとも一部分をレーザーで選択的に硬化させ、それによって、遮光活性化層(301)のパターンを形成し、
(ii.c) 基板(300)から処理溶液(302)の未硬化残存物を除去する、
ことによって提供されることを特徴とする請求項1〜3のいずれかに記載のプロセス。 - 処理溶液は、印刷方法によって堆積させることを特徴とする請求項1〜3のいずれかに記載のプロセス。
- 遮光活性化層(101)のパターンの高さは、1nm〜1μmの範囲であることを特徴とする請求項1〜5のいずれかに記載のプロセス。
- 基板(100)は、ホウケイ酸ガラス、石英ガラス、シリカガラス、フッ素化ガラス、ポリイミド、ポリエチレンテレフタレート、ポリエチレン、ポリプロピレン、ポリ酢酸ビニル、ポリビニルアルコールおよび上述したものの混合物および複合物から成る群から選択することを特徴とする請求項1〜6のいずれかに記載のプロセス。
- 感光性組成物(102)は、ドライフィルム、液体レジスト、印刷可能レジストおよび光画像化可能誘電体から選択することを特徴とする請求項1〜7のいずれかに記載のプロセス。
- 感光性組成物(102)は、ドライフィルムであることを特徴とする請求項8記載のプロセス。
- 感光性組成物(102)によって形成される層は、0.1〜20μmの厚みを有することを特徴とする請求項1〜9のいずれかに記載のプロセス。
- ステップ(vi)において堆積させる金属または金属合金は、銅および銅合金から選択することを特徴とする請求項1〜10のいずれかに記載のプロセス。
- 凹部構造(104)内への少なくとも1つの金属または金属合金(105)の堆積の後、ステップ(iv)において形成された光硬化された樹脂層(103)を除去し(ストリッピングし)、それによって、形成された金属または金属合金堆積物(105)を露出させる、さらなるステップ(vii)を含むことを特徴とする請求項1〜11のいずれかに記載のプロセス。
- 感光性組成物の屈折率nPは、透明基板の屈折率nTと実質的に同じであることを特徴とする請求項1〜12のいずれかに記載のプロセス。
- 電磁放射線の供給源は、高度の光コリメートを可能とする光源であることを特徴とする請求項1〜13のいずれかに記載のプロセス。
- 0.5μm〜10μmの線幅を有する金属または金属合金の線の大きさで作成される微細線回路が製造されることを特徴とする請求項1〜14のいずれかに記載のプロセス。
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