JP2018166192A - 基板処理システム、制御装置、成膜方法及びプログラム - Google Patents
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Abstract
Description
本発明の基板処理システムについて説明する。図1は、本発明の実施形態に係る基板処理システムの概略断面図である。
図1に示されるように、基板処理装置1は、長手方向が垂直方向である略円筒形の処理容器4を有する。処理容器4は、円筒体の内筒6と、内筒6の外側に同心的に配置された天井を有する外筒8とを備える2重管構造を有する。内筒6及び外筒8は、例えば石英等の耐熱性材料により形成されている。
本発明の実施形態に係る制御装置100について説明する。図2は、本発明の実施形態に係る制御装置100の機能構成を説明するための図である。
本発明の実施形態に係る外乱除去処理について説明する。図3は、本発明の実施形態に係る外乱除去処理の一例のフローチャートである。
4 処理容器
100 制御装置
101 記憶部
102 算出部
103 補正部
W ウエハ
Wm モニタウエハ
Claims (11)
- 処理容器内に収容された複数の基板に対し、前記複数の基板のうち少なくとも一の基板に成膜された膜の特性に基づいて算出される成膜条件を用いて、前記複数の基板に成膜処理を行うことが可能な基板処理システムであって、
前記基板の表面状態が前記一の基板に成膜される膜の特性に与える影響を表す表面状態情報、及び前記基板の前記処理容器内における配置状態が前記一の基板に成膜される膜の特性に与える影響を表す配置状態情報を記憶する記憶部と、
前記記憶部に記憶された前記表面状態情報及び前記配置状態情報に基づいて、前記複数の基板が前記一の基板の膜の特性に与える影響を表す情報を算出する算出部と、
前記算出部が算出した前記情報に基づいて、前記一の基板に成膜される膜の特性を補正する補正部と、
を有する、
基板処理システム。 - 前記表面状態情報は、前記基板に成膜された膜の種類を表す膜種情報を含む、
請求項1に記載の基板処理システム。 - 前記表面状態情報は、前記基板の表面積を表す表面積情報を含む、
請求項2に記載の基板処理システム。 - 前記配置状態情報は、前記処理容器内にガスを供給するガス導入部から前記一の基板に至るまでの経路上に載置される基板の枚数を表す枚数情報を含む、
請求項3に記載の基板処理システム。 - 前記配置状態情報は、前記一の基板における成膜が行われる側の面と隣接する基板に成膜された膜の種類を表す隣接膜種情報を含む、
請求項1乃至5のいずれか一項に記載の基板処理システム。 - 前記一の基板は、製品基板に形成される膜の特性のモニタのためのモニタ基板である、
請求項1乃至7のいずれか一項に記載の基板処理システム。 - 処理容器内に収容された複数の基板に対し、前記複数の基板のうち少なくとも一の基板に成膜された膜の特性に基づいて算出される成膜条件を用いて、前記複数の基板に成膜処理を行うことが可能な基板処理装置を制御する制御装置であって、
前記基板の表面状態が前記一の基板に成膜される膜の特性に与える影響を表す表面状態情報、及び前記基板の前記処理容器内における配置状態が前記一の基板に成膜される膜の特性に与える影響を表す配置状態情報を記憶する記憶部と、
前記記憶部に記憶された前記表面状態情報及び前記配置状態情報に基づいて、前記複数の基板が前記一の基板の膜の特性に与える影響を表す情報を算出する算出部と、
前記算出部が算出した前記情報に基づいて、前記一の基板に成膜される膜の特性を補正する補正部と、
を有する、
制御装置。 - 処理容器内に収容された複数の基板に対し、前記複数の基板のうち少なくとも一の基板に成膜された膜の特性に基づいて算出される成膜条件を用いて、前記複数の基板に成膜処理を行う成膜方法であって、
前記基板の表面状態が前記一の基板に成膜される膜の特性に与える影響を表す表面状態情報、及び前記基板の前記処理容器内における配置状態が前記一の基板に成膜される膜の特性に与える影響を表す配置状態情報に基づいて、前記複数の基板が前記一の基板の膜の特性に与える影響を表す情報を算出する算出ステップと、
前記算出ステップで算出した前記情報に基づいて、前記一の基板に成膜される膜の特性を補正する補正ステップと、
を有する、
成膜方法。 - 請求項10に記載の成膜方法をコンピュータに実行させるためのプログラム。
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KR1020180033813A KR102234404B1 (ko) | 2017-03-28 | 2018-03-23 | 기판 처리 시스템, 제어 장치, 성막 방법 및 프로그램 |
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