JP2018165647A - 試料トレンチ埋込方法 - Google Patents
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
また、荷電粒子ビームを用いた化学蒸着(CVD)によって、トレンチ内に化合物ガスの分解物(以下、埋込材料と称することがある)を堆積させてトレンチを埋め込む方法も知られている。
すなわち、本発明の試料トレンチ埋込方法は、一面から深さ方向に延びるトレンチを有する試料から、該トレンチを含む小領域の試料片を切り出す切り出し工程と、前記試料片の前記深さ方向に沿って広がる側面から、前記トレンチ内に向けて電子ビームを透過させるとともに、前記トレンチの前記一面側の開口から前記トレンチ内に化合物ガスを噴射することにより、前記電子ビームの照射で生じた二次電子によって前記化合物ガスを分解し、前記化合物ガスの構成物を前記トレンチ内に堆積させる堆積工程と、を少なくとも備えたことを特徴とする。
図1は、荷電粒子ビーム装置の一例を示す構成図である。
荷電粒子ビーム装置10は、内部を真空状態に維持可能な試料室11と、試料室11の内部において試料Sおよび試料片ホルダPを固定可能なステージ12と、ステージ12を駆動するステージ駆動機構13と、を備えている。
荷電粒子ビーム装置10は、試料室11の内部における所定の照射領域内の照射対象に電子ビーム(EB)を照射する電子ビーム照射光学系15を備えている。
荷電粒子ビーム装置10は、集束イオンビームまたは電子ビームの照射によって照射対象から発生する二次電子Rを検出する二次電子検出器16を備えている。
荷電粒子ビーム装置10は、ステージ12に固定された試料Sから微小な試料片Qを取り出し、試料片Qを保持して試料片ホルダPに移設するニードル18と、ニードル18を駆動して試料片Qを搬送するニードル駆動機構19と、を備えている。このニードル18とニードル駆動機構19を合わせて試料片移設手段と呼ぶこともある。
試料片Qの長手方向の寸法は、例えば、10μm、15μm、20μm程度で、幅(厚さ)は、例えば、500nm、1μm、2μm、3μm程度とされる。そして、トレンチTの開口径Wは、10nm〜200nm、深さDは、100nm〜40μm程度である。
ステージ12は、試料Sを保持する。ステージ12は、試料片ホルダPを保持するホルダ固定台12aを備えている。このホルダ固定台12aは複数の試料片ホルダPを搭載できる構造であってもよい。
コンピュータ21は、入力デバイス22から出力される信号または予め設定された自動運転制御処理によって生成される信号などによって、荷電粒子ビーム装置10の動作を統合的に制御する。
まず、試料片Qを作製するための準備を行う。すなわち、試料室11の内部において、ステージ12のホルダ固定台12a上に、試料Sを載置して固定するとともに、後に作製する試料片Qを固定する試料片ホルダPを固定する。そして、試料室11を密閉して図示しない排気手段で排気することで、試料室11内部を所定の真空度まで減圧させる。
なお、試料Sにおいて、予め観察を行いたい対象断面A1の位置が決定されている場合には、位置情報や画像情報を制御部21に記憶させておき、制御部21による制御のもと自動的に対象断面A1を含む位置を決定するものとしても良い。
Claims (3)
- 一面から深さ方向に延びるトレンチを有する試料から、該トレンチを含む小領域の試料片を切り出す切り出し工程と、
前記試料片の前記深さ方向に沿って広がる側面から、前記トレンチ内に向けて電子ビームを透過させるとともに、前記トレンチの前記一面側の開口から前記トレンチ内に化合物ガスを噴射することにより、前記電子ビームの照射で生じた二次電子によって前記化合物ガスを分解し、前記化合物ガスの構成物を前記トレンチ内に堆積させる堆積工程と、を少なくとも備えたことを特徴とする試料トレンチ埋込方法。 - 前記堆積工程では、前記電子ビームを前記トレンチの底部から前記開口に向かって走査させることにより、前記構成物を前記トレンチの底部から前記開口に向けて順に堆積させることを特徴とする請求項1記載の試料トレンチ埋込方法。
- 前記堆積工程では、前記試料片の前記側面から前記トレンチの内壁面までの距離に応じて前記電子ビームの加速電圧を可変させることを特徴とする請求項1または2記載の試料トレンチ埋込方法。
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JP2017062507A JP6900027B2 (ja) | 2017-03-28 | 2017-03-28 | 試料トレンチ埋込方法 |
TW107107256A TWI768002B (zh) | 2017-03-28 | 2018-03-05 | 試料溝槽埋入方法 |
CN201810253305.1A CN108666260B (zh) | 2017-03-28 | 2018-03-26 | 试样沟槽填埋方法 |
KR1020180034869A KR102485795B1 (ko) | 2017-03-28 | 2018-03-27 | 시료 트렌치 매립 방법 |
US15/938,022 US10648081B2 (en) | 2017-03-28 | 2018-03-28 | Method of burying sample trench |
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KR102180979B1 (ko) * | 2019-08-19 | 2020-11-19 | 참엔지니어링(주) | 처리 장치 및 방법 |
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CN108666260A (zh) | 2018-10-16 |
KR20180109738A (ko) | 2018-10-08 |
CN108666260B (zh) | 2023-09-12 |
TWI768002B (zh) | 2022-06-21 |
KR102485795B1 (ko) | 2023-01-05 |
US20180282870A1 (en) | 2018-10-04 |
TW201841188A (zh) | 2018-11-16 |
US10648081B2 (en) | 2020-05-12 |
JP6900027B2 (ja) | 2021-07-07 |
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