JP2018101698A - シリコンウェーハの研磨方法およびシリコンウェーハの製造方法 - Google Patents
シリコンウェーハの研磨方法およびシリコンウェーハの製造方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 190
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 190
- 239000010703 silicon Substances 0.000 title claims abstract description 190
- 238000005498 polishing Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000007517 polishing process Methods 0.000 claims description 57
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 45
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 238000007518 final polishing process Methods 0.000 claims description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
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- 238000007730 finishing process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 201
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
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- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
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- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
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Abstract
Description
(1)シリコンウェーハのおもて面および裏面を研磨する両面研磨工程と、
前記両面研磨工程後、前記シリコンウェーハのノッチ部の面取り部に対して研磨処理を施すノッチ部研磨工程と、
前記ノッチ部研磨工程後、前記ノッチ部の面取り部以外の前記シリコンウェーハの外周面取り部に対して研磨処理を施す外周面取り部研磨工程と、
前記外周面取り部研磨工程後、前記シリコンウェーハのおもて面に対して仕上げ研磨処理を施す仕上げ研磨工程と、
を備えるシリコンウェーハの研磨方法であって、
前記ノッチ部研磨工程は、前記おもて面が水濡れ状態の下で行うことを特徴とするシリコンウェーハの研磨方法。
以下、図面を参照して本発明の実施形態について説明する。本発明のシリコンウェーハの研磨方法は、シリコンウェーハのおもて面および裏面に対して研磨処理を施す両面研磨工程と、両面研磨工程後、シリコンウェーハのノッチ部の面取り部に対して研磨処理を施すノッチ部研磨工程と、ノッチ部研磨工程後、ノッチ部の面取り部以外のシリコンウェーハの外周面取り部(外周部の面取り部)に対して研磨処理を施す外周面取り部研磨工程と、外周面取り部研磨工程後、シリコンウェーハのおもて面に対して仕上げ研磨処理を施す仕上げ研磨工程とを備えるシリコンウェーハの研磨方法である。ここで、ノッチ部研磨工程は、おもて面が水濡れ状態の下で行うことを特徴とする。
次に、本発明によるシリコンウェーハの製造方法について説明する。本発明によるシリコンウェーハの製造方法は、チョクラルスキー法によりシリコンインゴットを育成し、育成したシリコンインゴットをスライスしてシリコンウェーハを得た後、得られたシリコンウェーハに対して、上記した本発明によるシリコンウェーハの研磨方法により、ノッチ部の面取り部に対して特定の条件下で研磨処理を施すことを特徴としている。従って、両面研磨工程、ノッチ部研磨工程、外周面取り部研磨工程、および仕上げ研磨工程をこの順に行い、ノッチ部研磨工程をシリコンウェーハのおもて面が水濡れ状態の下で行う以外、一切限定されない。以下、本発明のシリコンウェーハの製造方法の一例を示す。
本発明によるシリコンウェーハの製造方法により、シリコンウェーハを作成した。まず、CZ法により育成した単結晶インゴットの外周部に対して研削処理を施して直径を調整した後、インゴットの外周部に<110>方位を示すノッチ部を形成した。続いて、単結晶シリコンインゴットからブロックを切り出し加工を行った後、ノッチ部が形成されたブロックをスライスして、直径300mmのシリコンウェーハを得た。
発明例と同様にシリコンウェーハを2枚作成した。ただし、ノッチ部の面取り部に対する研磨処理の前に、シリコンウェーハのおもて面上に水の膜を形成しなかった。その他の条件は発明例と全て同じである。
発明例および従来例により作成されたシリコンウェーハの表面を、ウェーハ表面検査装置(Surfscan SP2;KLA−Tencor社製)を用いて、DICモード(DIC法による測定モード)により測定した。測定にあたって、凹凸形状の段差状微小欠陥の高さの閾値を3nmに設定し、この閾値を超える段差状微小欠陥の個数を求めた。得られた結果を図4に示す。
12,22 スラリー供給手段
13,33 水供給手段
21 台
31 二流体ノズル
32 ブラシ
B ビームスプリッタ
D 段差状微小欠陥
F 水の膜
H 飛沫
L レーザ
M ミラー
P フォトダイオード
S スラリー
W シリコンウェーハ
Claims (7)
- シリコンウェーハのおもて面および裏面を研磨する両面研磨工程と、
前記両面研磨工程後、前記シリコンウェーハのノッチ部の面取り部に対して研磨処理を施すノッチ部研磨工程と、
前記ノッチ部研磨工程後、前記ノッチ部の面取り部以外の前記シリコンウェーハの外周面取り部に対して研磨処理を施す外周面取り部研磨工程と、
前記外周面取り部研磨工程後、前記シリコンウェーハのおもて面に対して仕上げ研磨処理を施す仕上げ研磨工程と、
を備えるシリコンウェーハの研磨方法であって、
前記ノッチ部研磨工程は、前記おもて面が水濡れ状態の下で行うことを特徴とするシリコンウェーハの研磨方法。 - 前記水濡れ状態は、前記両面研磨工程の後に、前記おもて面に対して親水化処理を施して親水面とした後、前記親水面に水を供給することにより形成する、請求項1に記載のシリコンウェーハの研磨方法。
- 前記親水化処理は化学洗浄処理である、請求項2に記載のシリコンウェーハの研磨方法。
- 前記水の供給は、1L/分以上10L/分以下の流量で行う、請求項2または3に記載のシリコンウェーハの研磨方法。
- 前記水濡れ状態は、前記両面研磨工程の後に、前記おもて面に水を供給し続けることにより形成する、請求項1に記載のシリコンウェーハの研磨方法。
- 前記外周面取り部研磨工程と前記仕上げ研磨工程との間に化学洗浄処理を行わない、請求項1〜5のいずれか一項に記載のシリコンウェーハの研磨方法。
- チョクラルスキー法で育成した単結晶シリコンインゴットの外周部にノッチ部を形成し、次いでスライスしてシリコンウェーハを得た後、得られたシリコンウェーハに対して、請求項1〜6のいずれかに記載のシリコンウェーハの研磨方法により研磨処理を施すことを特徴とするシリコンウェーハの製造方法。
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DE112021000907T5 (de) | 2020-04-08 | 2022-11-17 | Shin-Etsu Handotai Co., Ltd. | Verfahren zur Messung der Form von DIC-Defekten auf Silicium-Wafern und Polierverfahren |
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