JP2018037497A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2018037497A JP2018037497A JP2016168569A JP2016168569A JP2018037497A JP 2018037497 A JP2018037497 A JP 2018037497A JP 2016168569 A JP2016168569 A JP 2016168569A JP 2016168569 A JP2016168569 A JP 2016168569A JP 2018037497 A JP2018037497 A JP 2018037497A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000003990 capacitor Substances 0.000 claims abstract description 50
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 7
- 230000000052 comparative effect Effects 0.000 description 13
- 230000008961 swelling Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 AlGaN Chemical compound 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/7687—Thin films associated with contacts of capacitors
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- H01L23/64—Impedance arrangements
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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Abstract
Description
(2)前記第1金属層の周縁部から前記第1金属層の外側の領域の前記基板上に延在した第3金属層を具備することが好ましい。第3金属層が第1金属層を押さえるため、第1金属層の膨れを効果的に抑制することができる。
(3)前記第1絶縁膜は、前記第1金属層の周縁部から前記第1金属層の外側の領域の前記基板上に延在した領域を含むことが好ましい。第1絶縁膜が第1金属層を押さえるため、第1金属層の膨れを効果的に抑制することができる。
(4)前記導電層は、前記ビアホールの内部の表面に設けられたシードメタルとその上に設けられたメッキ層からなることが好ましい。これにより、簡単な構成の導電層を形成することができる。
図1Aおよび図1Bに示すように、半導体装置100においては、ビアホール10a、キャパシタ26、パッド28(第1金属層)および絶縁膜40(第1絶縁膜)が厚さ方向(図1Bの上下方向)において重なっている。
図2Aから図2Hは半導体装置100の製造方法を例示する断面図である。図2Aに示すように、基板10の上面に半導体層11をエピタキシャル成長する。例えば蒸着法およびリフトオフ法、またはスパッタリング法およびエッチング法により、半導体層11の上面にパッド28を形成する。例えば化学気相成長(Chemical Vapor Deposition:CVD)法により、パッド28の上面に絶縁膜12を形成する。図2Bに示すように、例えばCVD法により絶縁膜12の上面に絶縁膜40を形成する。
図3Aは比較例1に係る半導体装置100Rを例示する平面図である。図3Bは図3Aの線B−Bに沿った断面図である。図3Aおよび図3Bに示すように、半導体装置100Rにおいては、キャパシタ26とパッド28とが平面内に並べて配置されている。パッド28は基板10上に、ビア電極18と重なるように設けられている。絶縁膜40は設けられていない。比較例1によれば、キャパシタ26とパッド28とが、基板10の平面内の別の箇所に設けられているため、基板10が大型化し、半導体装置も大型化してしまう。
図4Aは比較例2に係る半導体装置200Rを例示する平面図である。図4Bは図4Aの線C−Cに沿った断面図である。図4Cはパッド28に膨れの発生した例を示す断面図である。図4Aおよび図4Bに示すように、比較例2においては、キャパシタ26がビア電極18と重なっている。またキャパシタ26の下部電極20が金属層16と接触しており、金属層16を介してビア電極18と電気的に接続されている。すなわち下部電極20はキャパシタ26の電極であり、かつ比較例1におけるパッド28の役割も担う。比較例2によれば、キャパシタ26がビア電極18と重なっているため、比較例1と比べ基板10を小型化することができる。
10a ビアホール
11 半導体層
12、14、22、40 絶縁膜
13、15、23 開口部
16 金属層
18 ビア電極
20 下部電極
20a、22a 膨れ
24 上部電極
26 キャパシタ
30、32、34 配線層
100、200、300 半導体装置
Claims (4)
- 基板と、
前記基板上に設けられた半導体層と、
前記基板および前記半導体層を貫いて設けられたビアホールと、
前記ビアホールの内部に設けられた導電層と、
前記半導体層上に設けられ、前記導電層と電気的に接続されるとともに、前記ビアホール全面を被覆して設けられた第1金属層と、
前記第1金属層上に設けられた第1絶縁膜と、
前記第1絶縁膜上に設けられ、下部電極、上部電極および前記下部電極と前記上部電極の間に設けられた第2絶縁膜を含むキャパシタと、
前記第1金属層と、前記下部電極または上部電極の何れか一方との間を電気的に接続する第2金属層とを備え、
前記キャパシタの下部電極、上部電極および第2絶縁膜が互いにオーバーラップする領域は、その全てが前記第1金属層の領域の内側に位置するとともに、前記ビアホール全面を被覆する領域を含む半導体装置。 - 前記第1金属層の周縁部から前記第1金属層の外側の領域の前記基板上に延在した第3金属層を具備する請求項1に記載の半導体装置。
- 前記第1絶縁膜は、前記第1金属層の周縁部から前記第1金属層の外側の領域の前記基板上に延在した領域を含む請求項1から2のいずれか一項に記載の半導体装置。
- 前記導電層は、前記ビアホールの内部の表面に設けられたシードメタルとその上に設けられたメッキ層からなる請求項1記載の半導体装置。
Priority Applications (3)
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JP2016168569A JP6725109B2 (ja) | 2016-08-30 | 2016-08-30 | 半導体装置 |
US15/688,325 US10319634B2 (en) | 2016-08-30 | 2017-08-28 | Semiconductor device having MIM capacitor |
CN201710762899.4A CN107799503B (zh) | 2016-08-30 | 2017-08-30 | 具有mim电容器的半导体器件 |
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JP2016168569A JP6725109B2 (ja) | 2016-08-30 | 2016-08-30 | 半導体装置 |
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JP2018037497A true JP2018037497A (ja) | 2018-03-08 |
JP6725109B2 JP6725109B2 (ja) | 2020-07-15 |
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JP2016168569A Active JP6725109B2 (ja) | 2016-08-30 | 2016-08-30 | 半導体装置 |
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JP (1) | JP6725109B2 (ja) |
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US10297494B2 (en) * | 2017-01-26 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Raised via for terminal connections on different planes |
DE102017127920A1 (de) | 2017-01-26 | 2018-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Erhöhte Durchkontaktierung für Anschlüsse auf unterschiedlichen Ebenen |
US10622302B2 (en) | 2018-02-14 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for semiconductor device connection and methods of forming the same |
JP6981601B2 (ja) | 2018-05-29 | 2021-12-15 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US11158775B2 (en) | 2018-06-08 | 2021-10-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
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