JP2017538865A - 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス - Google Patents
気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス Download PDFInfo
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- 238000009834 vaporization Methods 0.000 title description 9
- 238000010549 co-Evaporation Methods 0.000 title 1
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- 238000000034 method Methods 0.000 claims abstract description 25
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- METIWNNPHPBEHP-UHFFFAOYSA-N 2-[[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]-2,1,3-benzothiadiazol-7-yl]methylidene]propanedinitrile Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C2=NSN=C2C(C=C(C#N)C#N)=CC=1)C1=CC=C(C)C=C1 METIWNNPHPBEHP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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Abstract
Description
OVPD:有機気相蒸着
HTM:高温気化材料
LTM:低温気化材料
DTDCPB:2−[(7−{4−[N,N−ビス(4−メチルフェニル)アミノ]フェニル}−2,1,3−ベンゾチアジアゾール−4−イル)メチレン]プロパンジニトリル
Bphen:バトフェナントロリン
ITO:インジウム錫オキシド
VTE:真空熱蒸着。
図6CのLTM濃度プロットは、前記主反応器512の上部から前記LTMの流れが前記シャワーヘッド607の入り口に近づき、前記基板510に凝縮することを示す。同様にして、図6Dに示すように、前記シャワーヘッド607からの注入されたHTMの流れはHTMが基板510に近づくにつれて希釈される。
本発明の明細書および実施例は例示のみとして考慮され、本発明の真の範囲や趣旨は後述の請求項に提示される。
Claims (21)
- 主反応器壁によって規定される主反応器と;
少なくとも2つの有機蒸気を前記主反応器に導入するように構成された、少なくとも2つのソースバレルと;
前記主反応器内に設置された基板ステージ;と
キャリアガスを前記主反応器壁に沿って導入することで、基板ステージに向けて前記有機蒸気が流れるときに前記有機蒸気の反応器壁上での凝縮を低減するように構成された、少なくとも1つのキャリアガス注入路と、を有する有機気相蒸着システム。 - 前記少なくとも2つのソースバレルの温度が個別に制御可能である、請求項1に記載のシステム。
- 前記少なくとも2つのソースバレルの温度が、少なくともソースバレルの一部分を取り囲む、請求項2に記載のシステム。
- 前記少なくとも1つのキャリアガス注入路が環状で前記主反応器壁に向けて同心円状に広がる、請求項1に記載のシステム。
- 前記少なくとも1つのキャリアガス注入路がキャリアガスの電荷を打消し、前記キャリアガスはアルゴンガスおよび窒素ガスの少なくとも1つを含む、請求項1に記載のシステム。
- 前記ソースバレルの1つが約200℃の温度に制御されるように構成され、前記ソースバレルの他の1つが約500℃の温度に制御されるように構成されるとともに、前記主反応器が約300℃の温度に制御されるように構成される、請求項1に記載のシステム。
- 前記有機蒸気が約20sccmで前記主反応器に供給されるとともに、前記キャリアガスが前記主反応器に約20sccmで導入される、請求項1に記載のシステム。
- 前記少なくとも1つのキャリアガス注入路は、前記2つの有機蒸気が主反応器に注入される位置より上部で、前記キャリアガスを前記主反応器壁に沿って導入し始める、請求項1に記載のシステム。
- 垂直の向きに設置され、前記有機蒸気が前記基板ステージの上部に導入される、請求項1に記載のシステム。
- 主反応器と;
前記主反応器の第1の端部に第1の有機蒸気を導入するように構成された第1のソースバレルと;
前記主反応器の第2の端部に位置するように設置された基板ステージと;
第2のソースバレルの取り出し口から前記主反応器に第2の有機蒸気を供給するように構成された、前記第2の有機蒸気より低い温度の第2のソースバレルと;
を有し、
前記第2のソースバレルの取り出し口は、前記主反応器の前記第1の端部と前記基板ステージとの間に前記基板とある距離で位置し、前記距離は前記第1の有機蒸気が前記基板ステージに向かって移動するときに、より高温の前記第2の有機蒸気への前記第1の有機蒸気の暴露を最小化するように選択される、有機気相蒸着システム。 - 前記少なくとも1つのソースバレルの取り出し口は、シャワーヘッドの環形状であり、前記第2の有機蒸気を前記基板に向かって供給するように構成される、請求項10に記載のシステム。
- 前記第2のソースバレルの取り出し口の前記基板ステージとは反対側に設置された遮断板をさらに有する、請求項10に記載のシステム。
- 前記第1の有機蒸気が約200℃の温度で導入されるように構成され、前記第2の有機蒸気が約500℃の温度で導入されるように構成されるとともに、前記基板ステージが約30℃の温度である、請求項10に記載のシステム。
- 第1の有機蒸気を第1の温度で周囲隔壁によって規定される主反応器に導入し;
第2の有機蒸気を、前記第1の温度より高い、第2の温度で主反応器に導入し;
キャリアガスを前記周囲隔壁に沿うように前記主反応器に供給する;
工程を含み、
前記キャリアガスは前記第2の有機蒸気を前記隔壁への凝縮を低減し、前記第1の有機蒸気と前記第2の有機蒸気が前記主反応器を通って基板に向かって流れるように構成される、有機気相蒸着法を用いて有機膜を製造する方法。 - 前記第1の温度は約200℃であり、前記第2の温度は約500℃であり、前記主反応器の温度は約300℃である、請求項14に記載の方法。
- 前記第1の有機蒸気を前記第1の温度に、前記第2の有機蒸気を前記第2の温度に、第1のソースバレルおよび第2のソースバレルを囲む加熱コイルを用いて個別に制御することをさらに含む、請求項14に記載の方法。
- 前記キャリアガスがアルゴンガスおよび窒素ガスの少なくとも1つを含む、請求項14に記載の方法。
- 前記第1の有機蒸気および第2の有機蒸気をそれぞれ前記主反応器に約20sccmで導入するとともに、前記キャリアガスを約20sccmで供給する、請求項14に記載の方法。
- 前記キャリアガスの供給を、前記第1の有機蒸気および前記第2の有機蒸気が前記主反応器に導入される位置よりも上部で行う、請求項14に記載の方法。
- 前記キャリアガスを、前記主反応器に沿って延びる環から供給する、請求項14に記載の方法。
- 第1の有機蒸気を基板の位置する主反応器の第2の端部に対して、第1の有機蒸気が向くように第1の有機蒸気を第1の温度で主反応器の第1の端部に導入し;
第2の有機蒸気を、前記第1の温度より高い第2の温度で前記基板に向けて導入する;
ことを含み、
前記主反応器に供給される前記第2の有機蒸気は、前記主反応器の第1の端部と前記基板との間に前記基板とある距離で位置し、前記距離は第1の有機蒸気が基板に向かって移動するときに、より高い温度の前記第2の有機蒸気への前記第1の有機蒸気の暴露を最小化するように選択される、有機気相蒸着法を用いて有機膜を製造する方法。
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JP2020218793A JP7340261B2 (ja) | 2014-12-11 | 2020-12-28 | 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス |
JP2023112293A JP2023145490A (ja) | 2014-12-11 | 2023-07-07 | 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス |
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PCT/US2015/065163 WO2016094755A1 (en) | 2014-12-11 | 2015-12-11 | Organic vapor phase deposition system and methods of use for simultaneous deposition of low and high evaporation temperature materials, and devices produced therein |
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JP2004010989A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | 薄膜形成装置 |
JP2005133122A (ja) * | 2003-10-29 | 2005-05-26 | Sony Corp | 成膜装置および成膜方法 |
JP2008240049A (ja) * | 2007-03-27 | 2008-10-09 | Seiko Epson Corp | 蒸着装置 |
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JP2004000989A (ja) * | 2003-08-05 | 2004-01-08 | Yasukawa Control Kk | 浄水装置 |
JP5179739B2 (ja) * | 2006-09-27 | 2013-04-10 | 東京エレクトロン株式会社 | 蒸着装置、蒸着装置の制御装置、蒸着装置の制御方法および蒸着装置の使用方法 |
US8440021B2 (en) * | 2007-08-16 | 2013-05-14 | The Regents Of The University Of Michigan | Apparatus and method for deposition for organic thin films |
AU2008293639A1 (en) | 2007-08-24 | 2009-03-05 | The Regents Of The University Of Michigan | Growth of ordered crystalline organic films |
KR102027475B1 (ko) * | 2012-03-28 | 2019-10-01 | 라시크 아이엔씨. | 다성분 용액으로부터의 공정 가스의 전달 방법 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004010989A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | 薄膜形成装置 |
JP2005133122A (ja) * | 2003-10-29 | 2005-05-26 | Sony Corp | 成膜装置および成膜方法 |
JP2008240049A (ja) * | 2007-03-27 | 2008-10-09 | Seiko Epson Corp | 蒸着装置 |
Non-Patent Citations (1)
Title |
---|
SHTEIN MAX: "MATERIAL TRANSPORT REGIMES AND MECHANISMS FOR GROWTH OF MOLECULAR ORGANIC THIN FILMS 以下備考", JOURNAL OF APPLIED PHYSICS, vol. VOL:89, NR:2, JPN5017010674, 15 January 2001 (2001-01-15), US, pages 1470 - 1476, ISSN: 0004166643 * |
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EP3230489A1 (en) | 2017-10-18 |
KR102560307B1 (ko) | 2023-07-26 |
TWI709659B (zh) | 2020-11-11 |
TW201631201A (zh) | 2016-09-01 |
KR20170095929A (ko) | 2017-08-23 |
EP3230489B1 (en) | 2023-02-15 |
JP2023145490A (ja) | 2023-10-11 |
US20170361354A1 (en) | 2017-12-21 |
JP2021063302A (ja) | 2021-04-22 |
CN107208253A (zh) | 2017-09-26 |
JP7340261B2 (ja) | 2023-09-07 |
JP6818681B2 (ja) | 2021-01-20 |
WO2016094755A1 (en) | 2016-06-16 |
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