JP2017517894A - ワイドバンドギャップ半導体デバイスのためのオーバーモールド・パッケージング - Google Patents
ワイドバンドギャップ半導体デバイスのためのオーバーモールド・パッケージング Download PDFInfo
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- JP2017517894A JP2017517894A JP2016569842A JP2016569842A JP2017517894A JP 2017517894 A JP2017517894 A JP 2017517894A JP 2016569842 A JP2016569842 A JP 2016569842A JP 2016569842 A JP2016569842 A JP 2016569842A JP 2017517894 A JP2017517894 A JP 2017517894A
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- 239000004065 semiconductor Substances 0.000 title claims description 73
- 238000004806 packaging method and process Methods 0.000 title description 14
- 230000009477 glass transition Effects 0.000 claims abstract description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 53
- 238000010521 absorption reaction Methods 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 230000004044 response Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
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- 238000004891 communication Methods 0.000 description 5
- 230000008602 contraction Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
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- 239000003990 capacitor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
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- 230000008054 signal transmission Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
Description
28 ワイドバンドギャップ半導体デバイス
30 オーバーモールド
32 入力/出力ピン
34 リードフレーム
38 ダイアタッチ材料
40 ボンドワイヤ
Claims (30)
- リードフレームと、
前記リードフレームに取り付けられたワイドバンドギャップ半導体デバイスと、
約135℃よりも高いガラス転移温度と約20GPa未満の曲げ弾性率とを有するオーバーモールドと、
を備える、トランジスタパッケージ。 - 前記オーバーモールドは、前記ガラス転移温度を超える温度で約50ppm/℃未満の熱膨張係数と前記ガラス転移温度未満の温度で約18ppm/℃未満の熱膨張係数とを有する、請求項1に記載のトランジスタパッケージ。
- 前記オーバーモールドは、約0.5%未満の吸湿率を有する、請求項1に記載のトランジスタパッケージ。
- 前記オーバーモールドは、約400℃未満のガラス転移温度を有する、請求項1に記載のトランジスタパッケージ。
- 前記リードフレーム及び前記ワイドバンドギャップ半導体デバイスは、前記オーバーモールドによって実質的に取り囲まれる、請求項1に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、窒化ガリウム(GaN)トランジスタである、請求項1に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約150Wよりも大きいピーク出力電力を有する、請求項6に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、2.2GHzを超えて3.8GHzに至るまでの周波数で動作する場合に約150Wよりも大きいピーク出力電力を有する、請求項7に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約1kW未満のピーク出力電力を有する、請求項7に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約40W/m−Kよりも大きいバルク熱伝導率と約20GPa未満の曲げ弾性率とを有するダイアタッチ材料を用いて前記リードフレームに取り付けられる、請求項1に記載のトランジスタパッケージ。
- 前記ダイアタッチ材料は、約200W/m−K未満のバルク熱伝導率を有する、請求項10に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、GaN on SiC(窒化ガリウム・オン・シリコンカーバイド)トランジスタである、請求項1に記載のトランジスタパッケージ。
- リードフレームと、
前記リードフレームに取り付けられたワイドバンドギャップ半導体デバイスと、
約135℃より高いガラス転移温度と、前記ガラス転移温度を超える温度で約50ppm/℃未満の熱膨張係数と前記ガラス転移温度未満の温度で約18ppm/℃未満の熱膨張係数とを有するオーバーモールドと、
を備えるトランジスタパッケージ。 - 前記オーバーモールドは、約400℃未満のガラス転移温度を有する、請求項13に記載のトランジスタパッケージ。
- 前記オーバーモールドは、約0.5%未満の吸湿率を有する、請求項13に記載のトランジスタパッケージ。
- 前記リードフレーム及び前記ワイドバンドギャップ半導体デバイスは、前記オーバーモールドによって実質的に取り囲まれる、請求項13に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、窒化ガリウム(GaN)トランジスタである、請求項13に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約150Wより大きいピーク出力電力を有する、請求項13に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、3.8GHzに至るまでの周波数で動作する場合に約150Wより大きいピーク出力電力を有する、請求項18に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約1kW未満のピーク出力電力を有する、請求項19に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約40W/m−Kより大きいバルク熱伝導率と約20GPa未満の曲げ弾性率とを有するダイアタッチ材料を用いて前記リードフレームに取り付けられる、請求項13に記載のトランジスタパッケージ。
- 前記ダイアタッチ材料は、約200W/m−K未満のバルク熱伝導率を有する、請求項21に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、GaN on SiC(窒化ガリウム・オン・シリコンカーバイド)トランジスタである、請求項13記載のトランジスタパッケージ。
- リードフレームと、
約40W/m−Kより大きいバルク熱伝導率と約20GPa未満の曲げ弾性率とを有するダイアタッチ材料を用いて前記リードフレームに取り付けられたワイドバンドギャップ半導体デバイスと、
を備える、トランジスタパッケージ。 - 前記ダイアタッチ材料は、約200W/m−K未満のバルク熱伝導率を有する、請求項24に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、窒化ガリウム(GaN)トランジスタである、請求項24に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約150Wより大きいピーク出力電力を有する、請求項26に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、3.8GHzに至るまでの周波数で動作する場合に約150Wより大きいピーク出力電力を有する、請求項27記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、約1kW未満のピーク出力電力を有する、請求項27に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、GaN on SiC(窒化ガリウム・オン・シリコンカーバイド)トランジスタである、請求項24記載のトランジスタパッケージ。
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