JP2017501883A - 金属セラミック基板を製造する方法 - Google Patents
金属セラミック基板を製造する方法 Download PDFInfo
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- JP2017501883A JP2017501883A JP2016538800A JP2016538800A JP2017501883A JP 2017501883 A JP2017501883 A JP 2017501883A JP 2016538800 A JP2016538800 A JP 2016538800A JP 2016538800 A JP2016538800 A JP 2016538800A JP 2017501883 A JP2017501883 A JP 2017501883A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 246
- 239000002184 metal Substances 0.000 title claims abstract description 246
- 239000000919 ceramic Substances 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 114
- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000001465 metallisation Methods 0.000 claims abstract description 49
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000005219 brazing Methods 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- 238000005304 joining Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000001513 hot isostatic pressing Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 2
- 239000011224 oxide ceramic Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- 229910052845 zircon Inorganic materials 0.000 claims 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 8
- 239000005751 Copper oxide Substances 0.000 description 6
- 229910000431 copper oxide Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
・ 均一な酸化銅層が得られるように銅シートを酸化させるステップと、
・ 上記の均一な酸化銅層を備えた銅シートをセラミック層上に載置するステップと、
・ 約1025〜1083℃の、例えば約1071℃のプロセス温度にこの結合体を加熱するステップと、
・ 室温に冷却するステップとを有する。
Claims (19)
- 第1および第2メタライゼーション部(3,4)と、前記第1および前記第2メタライゼーション部(3,4)の間に収容される少なくとも1つのセラミック層(2)とを含む、金属セラミック基板(1)を製造する方法であって、
第1金属層(5)および第2金属層(6)と前記セラミック層(2)とを、具体的には前記第1金属層(5)および前記第2金属層(6)の開放縁部部分(5a,6a)がそれぞれ、縁部側において前記セラミック層(2)を越えて突出するように、重ねて積層し、
前記セラミック層(2)を収容する、気密に閉鎖されて容器内部空間(8)を閉じ込める金属容器(7)を形成するため、前記第1金属層(5)および前記第2金属層(6)を、突出している前記開放縁部部分(5a,6a)の領域において互いに変形させて、互いに直接接合し、
前記金属層(5,6)のうちの少なくとも1つと、前記セラミック層(2)との面による接合を作るため、処理チャンバにおいて、前記金属容器(7)を構成する前記金属層(5,6)を、前記容器内部に収容されている前記セラミック層(2)と共に500〜2000barのガス圧および300℃から前記金属層(5,6)の融解温度までのプロセス温度で互いに熱間静水圧加圧し、
前記第1および前記第2メタライゼーション部(3,4)を構成するため、少なくとも、前記金属層(5,6)の互いに接合されかつ突出した前記開放縁部部分(5a,6a)を除去する、
ことを特徴とする方法。 - 前記金属容器(7)を形成するため、前記金属層(5,6)の前記開放縁部部分(5a,6a)を、その直接の接合の前に、締め付け力(F,F’)を加えることによって変形させる、
請求項1に記載の方法。 - 前記金属層(5,6)の前記開放縁部部分(5a,6a)は、縁部側が溶接により、特に抵抗溶接もしくはレーザ溶接により、または、硬ろう付けを含めたろう付けによって互いに接合され、または、
前記金属層(5,6)の前記縁部側の直接接合が、機械的な接合法および/または加工法によって作られ、具体的には前記開放縁部部分(5a,6a)の圧延、圧縮および/または折り返しによって作られる、
請求項1または2に記載の方法。 - 前記金属層(5,6)の前記縁部側の直接接合の前に前記容器内部空間(8)を真空化する、
請求項1から3までのいずれか1項に記載の方法。 - 前記金属層(5,6)の前記縁部側の直接接合の前に、真空化した前記容器内部空間(8)に酸素を注入する、
請求項4に記載の方法。 - 前記金属層(5,6)を、真空においてまたは不活性ガス雰囲気において、好適には不活性ガスとして窒素またはアルゴンを使用して縁部側を直接互いに接合する、
請求項4に記載の方法。 - セラミック層(2)に加えて、前記容器内部空間(8)に多孔性材料(11)、好適には前記容器内部空間(8)内に存在する残存ガスを吸収するように形成された金属またはセラミックを収容する、
請求項1から6までのいずれか1項に記載の方法。 - 前記容器内部空間(8)に収容する前、前記多孔性材料(11)を真空化して、気密の密封層(12)でコーティングする、
請求項7に記載の方法。 - 前記容器内部空間(8)に収容する前、前記多孔性材料(11)に酸素を充填して気密の密封層(12)によってコーティングする、
請求項7に記載の方法。 - 前記積層の前、前記セラミック層(2)の上面(2.1)および/または下面(2.2)に硬ろう層もしくは活性ろう層を全面にわたってコーティングする、
請求項1から9までのいずれか1項に記載の方法。 - 前記第1メタライゼーション部(3)および/または前記第2メタライゼーション部(4)を、銅もしくは銅合金、および/またはアルミニウムもしくはアルミニウム合金から製造する、
請求項1から10までのいずれか1項に記載の方法。 - 前記セラミック層(2)を酸化物セラミック、窒化物セラミックもしくは炭化物セラミックから、具体的には酸化アルミニウム(Al2O3)もしくは窒化アルミニウム(AlN)もしくは窒化ケイ素(Si3N4)もしくは炭化ケイ素(SiC)から製造するか、または、酸化ジルコンを含有する酸化アルミニウム(Al2O3+ZrO2)から製造する、
請求項1から11までのいずれか1項に記載の方法。 - 第1および第2メタライゼーション部(3,4)と、前記第1及び前記第2メタライゼーション部(3,4)の間に収容されかつ上面(2,1)および下面(2.2)を備えた少なくとも1つのセラミック層(2)を含む、金属セラミック基板(1)を製造する方法にであって、
前記セラミック層(2)の前記上面(2.1)および/または前記下面(2.2)上の縁部側に、周囲を取り囲むフレーム状の、好適には連続したろう層(13)を被着し、第1および第2金属層(5,6)と前記セラミック層(2)とを重ねて積層し、加熱により、少なくとも、周囲を取り囲むフレーム状の前記ろう層(13)の領域において縁部側のろう接続部(14)を形成し、しかも前記セラミック層(2)と、複数の前記金属層(5,6)のうちの少なくとも1つとの間に、気密に閉鎖されたスリット状の中間空間(15,15’)を形成し、複数の前記金属層(5,6)のうちの少なくとも1つと前記セラミック層(2)との平坦な接続部を作るため、前記金属層(5,6)および前記セラミック層(2)を、処理チャンバにおいて、500〜2000barのガス圧および300℃から前記金属層(5,6)または前記ろう層(13)の融解温度までのプロセス温度において、互いに熱間静水圧加圧し、前記金属層(5,6)が前記メタライゼーション部(3,4)を形成する、
ことを特徴とする方法。 - 前記第1および前記第2メタライゼーション部(3,4)を形成するため、少なくとも、縁部側の前記ろう付け接合部(14)を介して前記セラミック層(2)に接合されている、前記金属層(5,6)の縁部領域(5a,6a)を除去する、
請求項13に記載の方法。 - 前記熱間静水圧加圧の前にDCB法または硬ろう付け法もしくは活性ろう付け法を使用して、前記金属層(5,6)のうちの1つの金属層を前記セラミック層(2)に接合する、
請求項1から14までのいずれか1項に記載の方法。 - 前記積層の際に前記第1金属層(5)と前記セラミック層(2)との間および/または前記第2金属層(6)と前記セラミック層(2)との間に、好適には銅またはアルミニウムからなる少なくとも1つの別の金属層(5’,6’)を挿入する、
請求項1から15までのいずれか1項に記載の方法。 - 前記金属層(5,6)を縁部側で接合するため、2つの半殻部(9.1,9.2)を有する補助ツール(9)を用いて複数の前記層(2,5,6)を互いに締め付ける、
請求項1から16までのいずれか1項に記載の方法。 - 前記積層の前、複数の前記金属層(5,6)のうちの少なくとも1つ、および/または、前記セラミック層(2)の上面(2.1)および/または下面(2.2)に酸化物層を被着する、
請求項1から17までのいずれか1項に記載の方法。 - 請求項1から18までのいずれか1項に記載の方法にしたがって製造された金属セラミック基板(1)。
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DE102022104156A1 (de) | 2022-02-22 | 2023-08-24 | Rogers Germany Gmbh | Metall-Keramik-Substrat und Verfahren zur Herstellung eines Metall-Keramik-Substrats |
DE102022122799A1 (de) | 2022-09-08 | 2024-03-14 | Rogers Germany Gmbh | Elektronikmodul und Verfahren zur Herstellung eines solchen Elektronikmoduls |
DE102022129493A1 (de) | 2022-11-08 | 2024-05-08 | Rogers Germany Gmbh | Metall-Keramik-Substrat und Verfahren zur Herstellung von Metall-Keramik-Substraten |
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WO2015085991A1 (de) | 2015-06-18 |
KR20160122700A (ko) | 2016-10-24 |
CN105900222A (zh) | 2016-08-24 |
KR102415810B1 (ko) | 2022-07-01 |
US10351477B2 (en) | 2019-07-16 |
US20160304405A1 (en) | 2016-10-20 |
DE102013113734B4 (de) | 2018-03-08 |
EP3080055B1 (de) | 2018-11-28 |
EP3080055A1 (de) | 2016-10-19 |
DE102013113734A1 (de) | 2015-06-11 |
JP6676528B2 (ja) | 2020-04-08 |
CN105900222B (zh) | 2018-11-02 |
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