JP2017174713A - Heater divided into multi-zones - Google Patents
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- JP2017174713A JP2017174713A JP2016061539A JP2016061539A JP2017174713A JP 2017174713 A JP2017174713 A JP 2017174713A JP 2016061539 A JP2016061539 A JP 2016061539A JP 2016061539 A JP2016061539 A JP 2016061539A JP 2017174713 A JP2017174713 A JP 2017174713A
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- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 230000007423 decrease Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 239000010409 thin film Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 80
- 230000002093 peripheral effect Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 12
- 238000007650 screen-printing Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000005238 degreasing Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
本発明は、半導体ウエハ等の被加熱物を載置して加熱する加熱ヒータに関し、特にマルチゾーンに区分されたゾーンごとに加熱可能な加熱ヒータに関する。 The present invention relates to a heater that places and heats an object to be heated such as a semiconductor wafer, and more particularly to a heater that can be heated for each zone divided into multiple zones.
ＬＳＩなどの半導体デバイスを製造する半導体製造装置では、被処理物である半導体ウエハに対してＣＶＤやスパッタリングに代表される成膜処理やエッチング処理など、様々な薄膜処理が施される。これら薄膜処理は半導体ウエハを加熱状態で処理することが多く、当該処理が行われるチャンバー内には薄膜処理の際に半導体ウエハを載置してその下面から加熱するサセプタとも称されるウエハ加熱ヒータが一般的に搭載されている。 In a semiconductor manufacturing apparatus for manufacturing a semiconductor device such as an LSI, various thin film processes such as a film forming process and an etching process typified by CVD and sputtering are performed on a semiconductor wafer which is an object to be processed. These thin film processes often process semiconductor wafers in a heated state, and a wafer heater called a susceptor that places a semiconductor wafer in the chamber in which the process is performed and heats the semiconductor wafer from its lower surface. Is generally installed.
上記ウエハ加熱ヒータは、例えば特許文献１に示されるように上面に平坦なウエハ載置面を備えたセラミックス製の円板状部材からなるウエハ載置台と、これを下面側から支持する円筒状の支持部材とから構成されており、該ウエハ載置台の内部には電熱コイルや薄膜状の抵抗発熱体等の発熱回路がウエハ載置面に平行な面上に埋設されている。該発熱回路の両端部に電気的に接続する端子部はウエハ載置台の下面から突出しており、そこに接続する導電性部材からなる引出線を介して外部電源に接続されている。
The wafer heater includes, for example, a wafer mounting table made of a ceramic disk-shaped member having a flat wafer mounting surface on the upper surface as shown in
上記したウエハ加熱ヒータでは製品となる半導体デバイスの品質のばらつきを抑えるため、ウエハ載置面での均熱性を高めて半導体ウエハを全面に亘って均一に加熱することが求められている。そのため、発熱回路の回路パターンを緻密にして温度ムラが生じないようにしたり、ウエハ載置面をマルチゾーンに区分してそれらの各々に配した発熱回路に個別に給電することでゾーンごとにきめ細かく温度制御したりすることが行われている。 The above-described wafer heater is required to uniformly heat the semiconductor wafer over the entire surface by increasing the heat uniformity on the wafer mounting surface in order to suppress the variation in quality of the semiconductor device as a product. Therefore, the circuit pattern of the heat generation circuit is made minute so that temperature unevenness does not occur, or the wafer mounting surface is divided into multi-zones, and power is individually supplied to the heat generation circuits arranged in each of the zones, so that each zone is finely divided. Temperature control is performed.
しかしながら、例えばウエハ載置面を内側と外側の２つのゾーンに区分してそれらの各々に個別に給電可能な発熱回路を配する場合、合計４個の端子部をウエハ載置台の下面側に設ける必要があるため、これら端子部及びそれらの引出線を伝ってウエハ載置台の熱が外部に逃げやすくなり、その結果ウエハ載置面の温度が局所的に低下することがあった。 However, for example, when a wafer mounting surface is divided into two zones, an inner side and an outer side, and a heating circuit capable of supplying power to each of them is arranged, a total of four terminal portions are provided on the lower surface side of the wafer mounting table. Since it is necessary, the heat of the wafer mounting table easily escapes outside through these terminal portions and their lead lines, and as a result, the temperature of the wafer mounting surface may be locally reduced.
また、チャンバー内は腐食性ガス雰囲気にあるため、端子部及び引出線は気密シールされた円筒状の支持部材の内側に設けるのが望ましいが、そのため、外側ゾーンの発熱回路の両端部を支持部材が設けられている内側ゾーンにまで引き込む必要があった。その結果、内側ゾーンの発熱回路の回路パターンが不均一になる上、外側ゾーンの発熱回路の両端部の引き込み部分の発熱によって内側ゾーンの均熱性が乱れることがあった。 Also, since the inside of the chamber is in a corrosive gas atmosphere, it is desirable to provide the terminal part and the lead wire inside the airtightly sealed cylindrical support member. Therefore, both ends of the heat generating circuit in the outer zone are provided on the support member. Needed to be pulled into the inner zone where As a result, the circuit pattern of the heat generating circuit in the inner zone becomes non-uniform, and the heat uniformity in the inner zone may be disturbed by the heat generated in the drawing portions at both ends of the heat generating circuit in the outer zone.
本発明は、このような従来の事情に鑑みてなされたものであり、半導体ウエハ等の被加熱物を載置する載置台の載置面の均熱性を安価且つコンパクトな構造で高めることが可能な加熱ヒータを提供することを目的とする。 The present invention has been made in view of such a conventional situation, and it is possible to improve the thermal uniformity of the mounting surface of the mounting table on which a heated object such as a semiconductor wafer is mounted with an inexpensive and compact structure. An object is to provide a simple heater.
上記目的を達成するため、本発明に係る加熱ヒータは、被加熱物の載置面を上面に備えた載置台を有する加熱ヒータであって、前記載置面を２ゾーン以上に区分したゾーンごとに前記載置台の内部には発熱回路が埋設されており、これら発熱回路は載置台の厚み方向で異なる位置にそれぞれ層状に配設されており、少なくとも２つの発熱回路の一端部同士が共通の端子部に接続していることを特徴としている。 In order to achieve the above object, a heater according to the present invention is a heater having a mounting table provided with a mounting surface for an object to be heated on the upper surface, and each zone in which the mounting surface is divided into two or more zones. The heating table is embedded in the mounting table, and the heating circuits are arranged in layers at different positions in the thickness direction of the mounting table, and one end of at least two heating circuits is common to each other. It is characterized by being connected to the terminal part.
本発明によれば、半導体ウエハ等の被加熱物を載置する載置台の載置面の均熱性を安価且つコンパクトな構造で高めることができる。 ADVANTAGE OF THE INVENTION According to this invention, the thermal uniformity of the mounting surface of the mounting base which mounts to-be-heated objects, such as a semiconductor wafer, can be improved with a cheap and compact structure.
最初に本発明の実施形態を列記して説明する。本発明の加熱ヒータの実施形態は、被加熱物の載置面を上面に備えた載置台を有する加熱ヒータであって、前記載置面を２ゾーン以上に区分したゾーンごとに前記載置台の内部には発熱回路が埋設されており、これら発熱回路は載置台の厚み方向で異なる位置にそれぞれ層状に配設されており、少なくとも２つの発熱回路の一端部が共通の端子部に接続していることを特徴としている。これにより半導体ウエハ等の被加熱物を載置する載置台の載置面の均熱性を安価且つコンパクトな構造で高めることができる。 First, embodiments of the present invention will be listed and described. An embodiment of the heater according to the present invention is a heater having a mounting table provided with a mounting surface for an object to be heated on the upper surface, and the mounting table is divided into two or more zones. Heat generation circuits are embedded inside, and these heat generation circuits are arranged in layers at different positions in the thickness direction of the mounting table, and one end of at least two heat generation circuits are connected to a common terminal portion. It is characterized by being. Thereby, the thermal uniformity of the mounting surface of the mounting table on which an object to be heated such as a semiconductor wafer is mounted can be enhanced with an inexpensive and compact structure.
上記本発明の加熱ヒータの実施形態においては、前記少なくとも２つの発熱回路の一端部が露出する有底穴が前記載置台の下面に設けられており、前記有底穴に前記共通の端子部の先端部が嵌入しているのが好ましい。これにより簡易な構造で共通端子を接続させることが可能になる。また、前記有底穴で露出している前記少なくとも２つのゾーンの発熱回路の一端部は、前記有底穴の内壁面においてメタライズ層の形態を有しているのが好ましい。これにより、発熱回路の一端部と共通の端子部との電気的接続を安定化させることができる。更に、前記有底穴は奥に行くに従って縮径するテーパー構造を有しており、前記共通の端子部の先端部は前記テーパー構造の有底穴に嵌合するように切頭円錐形状を有しているのが好ましい。これにより発熱回路の一端部と共通の端子部との電気的接続をより一層安定化させることが可能になる。 In the embodiment of the heater according to the present invention, a bottomed hole from which one end of the at least two heat generating circuits is exposed is provided on the lower surface of the mounting table, and the common terminal portion is provided in the bottomed hole. It is preferable that the tip portion is fitted. This makes it possible to connect the common terminals with a simple structure. Moreover, it is preferable that the one end part of the heat generating circuit of the at least two zones exposed at the bottomed hole has a form of a metallized layer on the inner wall surface of the bottomed hole. Thereby, the electrical connection between the one end portion of the heat generating circuit and the common terminal portion can be stabilized. Further, the bottomed hole has a tapered structure that decreases in diameter toward the back, and the tip of the common terminal portion has a truncated conical shape so as to fit into the bottomed hole of the tapered structure. It is preferable. This makes it possible to further stabilize the electrical connection between the one end portion of the heat generating circuit and the common terminal portion.
上記本発明の加熱ヒータの実施形態においては、前記載置台を下面側から支持する筒状支持部材を更に有しているのが好ましく、また、前記端子部が前記筒状支持部材の内側に設けられているのがより好ましい。これにより、ウエハ載置面での優れた均熱性の効果がより顕著になる。また、筒状部材の内側に設けた端子部やその引出線を腐食性ガス雰囲気から隔離することができる。 In the embodiment of the heater of the present invention, it is preferable to further include a cylindrical support member that supports the mounting table from the lower surface side, and the terminal portion is provided inside the cylindrical support member. More preferably. As a result, the excellent thermal uniformity effect on the wafer mounting surface becomes more remarkable. Moreover, the terminal part provided in the inner side of the cylindrical member and its lead wire can be isolated from the corrosive gas atmosphere.
次に、本発明の加熱ヒータの一具体例として、図１に示すような半導体ウエハに対してエッチング処理やＣＶＤ処理などを行う半導体製造装置のチャンバー１内に搭載されるウエハ加熱ヒータ２について説明する。この本発明の一具体例のウエハ加熱ヒータ２は、半導体ウエハＷを載置するウエハ載置面１０ａを上面に備えた好適にはセラミックスからなる略円板状のウエハ載置台１０と、これを下面から支持する好適にはセラミックスからなる略円筒形状の支持部材２０とを有している。
Next, as a specific example of the heater of the present invention, a wafer heater 2 mounted in a
支持部材２０の上下両端部は外側に屈曲したフランジ形状を有しており、その環状端面に設けた図示しないＯ−リング等のシール材及び該フランジ部を貫通する図示しないネジ等の結合手段によってウエハ載置台１０の下面及びチャンバー１の底面にそれぞれ気密にシールされている。これにより、支持部材２０の内側をチャンバー１内の腐食性ガス雰囲気から隔離することが可能になる。
The upper and lower ends of the
上記のウエハ載置台１０や支持部材２０の好適な材質であるセラミックとしては、例えば窒化アルミニウム、窒化ケイ素、炭化ケイ素、酸化アルミニウム等を挙げることができる。これらの中では熱伝導率の高い窒化アルミニウムが好ましい。ウエハ載置台１０と支持部材２０は互いに同じ材質からなるのが好ましく、これにより加熱や冷却の際に同様に膨張や縮小させることができるので、熱応力によるウエハ載置台１０のウエハ載置面１０ａの反りやウエハ載置台１０と支持部材２０との接合部の破損等の問題を生じにくくすることができる。
Examples of the ceramic that is a suitable material for the wafer mounting table 10 and the
本発明の一具体例のウエハ加熱ヒータ２では、図２（ａ）〜（ｃ）に示すように、このウエハ載置台１０の内部に、第１発熱回路１１、第２発熱回路１２、及び第３発熱回路１３の３つの発熱回路が埋設されている。これら３つの発熱回路は、ウエハ載置面１０ａを半径方向に区分した環状外周部、円形中央部、及びそれらの間の環状中間部の３つのゾーンを別々に加熱できるようにこれら３つのゾーン内にそれぞれ配設されている。すなわち、第１発熱回路１１はウエハ載置台１０の最外周部の環状ゾーン内に配設されており、第３発熱回路１３はウエハ載置台１０の中央部の円形ゾーン内に配設されており、第２発熱回路１２はこれら両ゾーンに挟まれた中間部の環状ゾーン内に配設されている。
In the wafer heater 2 according to one specific example of the present invention, as shown in FIGS. 2A to 2C, a first
なお、本発明の加熱ヒータは上記したようにウエハ載置面１０ａを３つのゾーンに区分する場合に限定されるものではなく、ウエハ載置面１０ａを２つのゾーンに区分してもよいし、４つ以上のゾーンに区分してもよい。また、区分のしかたは、上記のようにウエハ載置面１０ａを半径方向に区分する場合に限定されるものではなく、ウエハ載置面１０ａを周方向に区分してもよいし、半径方向の区分と周方向の区分とが混在していてもよい。
The heater of the present invention is not limited to the case where the
本発明の一具体例のウエハ加熱ヒータ２では、上記の３つの発熱回路は、ウエハ載置台１０の内部において、厚み方向に異なる３つの面上にそれぞれ位置している。すなわち、第１発熱回路１１はウエハ載置面１０ａに最も近い面上に位置しており、第２発熱回路１２はウエハ載置台１０の厚み方向のほぼ中央の面上に位置しており、第３発熱回路１３はウエハ載置面１０ａから最も遠い面上に位置している。なお、ウエハ載置台１０内の第１発熱回路１１及び第３発熱回路１３の位置は逆であってもよい。
In the wafer heater 2 according to one specific example of the present invention, the three heating circuits described above are located on three different surfaces in the thickness direction inside the wafer mounting table 10. That is, the first
かかる構造により、各ゾーンの発熱回路の両端部は他のゾーンの発熱回路に物理的に干渉することなくウエハ載置台１０の中心部にまで引き込むことが可能になる。また、他のゾーン内を通過する両端部の引き込み部分は、当該他のゾーンのほぼ全面積を使うことができるので、例えば薄膜状の抵抗発熱体の場合は、当該両端部の引き込み部分を幅広にしてそこから実質的にジュール熱が発生しないようにできる。これにより、当該両端部の引き込み部分によって他のゾーンの均熱性が乱れるのを防ぐことができる。 With this structure, both end portions of the heat generating circuit in each zone can be drawn to the center of the wafer mounting table 10 without physically interfering with the heat generating circuits in other zones. In addition, since the drawing area at both ends passing through the other zone can use almost the entire area of the other zone, for example, in the case of a thin film resistance heating element, the drawing area at the both ends is wide. Thus, Joule heat can be substantially prevented from being generated therefrom. Thereby, it can prevent that the soaking | uniform-heating property of another zone is disturb | confused by the drawing-in part of the said both ends.
本発明の一具体例のウエハ加熱ヒータ２では、上記の３つの発熱回路の一端部１１ａ、１２ａ、１３ａは全てウエハ載置台１０の中心部で重なっている。そして、これら３つの一端部１１ａ、１２ａ、１３ａが重なっている部分を貫通する有底穴１０ｂがウエハ載置台１０の下面側に設けられている。有底穴１０ｂの内壁部では上記の３つの発熱回路の一端部１１ａ、１２ａ、１３ａが露出しているので、この有底穴１０ｂにウエハ載置台１０の下面側からロッド状の共通端子部１４を挿入することで、該共通端子部１４を共通端子としてこれら３つの発熱回路の一端部１１ａ、１２ａ、１３ａに接続することができる。
In the wafer heater 2 according to a specific example of the present invention, the one
本発明の一具体例のウエハ加熱ヒータ２では、図３に示すように、上記の有底穴１０ｂは奥に行くに従って縮径するテーパー構造になっており、このテーパー構造の内壁を覆うように上記した３つの発熱回路の一端部１１ａ、１２ａ、１３ａは一体となって漏斗状のメタライズ層１５を形成している。そして、この漏斗状のメタライズ層１５のテーパー部に面で当接するように、上記したロッド状の共通端子部１４は先端部１４ａが先細の切頭円錐形状になっている。これにより、上記した３つの発熱回路の一端部１１ａ、１２ａ、１３ａと共通端子部１４との電気的接続を安定化させることができる。
In the wafer heater 2 of one specific example of the present invention, as shown in FIG. 3, the bottomed
上記のメタライズ層の材質としてはＷ（タングステン）またはＭｏ（モリブデン）が好ましく、その厚みは５〜５０μｍ程度、有底穴１０ｂの最も深い部分に位置する縮径部の内径は０.２〜２ｍｍ程度、有底穴１０ｂの開口部に位置する拡径部の内径は６〜１０ｍｍ程度が好ましい。また、共通端子部１４の材質としてはタングステンが好ましい。共通端子部１４をウエハ載置台１０に固定する方法としては、限定するものではないが、例えば図３に示すように切頭円錐形状部の近傍に位置する円柱部の先端部分にツバ状の突出部１４ｂを設け、この突出部とウエハ載置台１０の下面との対向部分にガラス材を封入することで良好に固定することができる。
The material of the metallized layer is preferably W (tungsten) or Mo (molybdenum), the thickness thereof is about 5 to 50 μm, and the inner diameter of the reduced diameter portion located at the deepest portion of the bottomed
上記の３つの発熱回路１１、１２、１３の他端部は、共通の端子部１４の近傍に位置する端子１６、１７、１８にそれぞれ接合している。そして、これら４つの端子部に４本の引出線１９の一端部がそれぞれ接続している。これら４本の引出線１８は支持部材２０の内側で下端まで延在し、チャンバー１の底面に設けられている貫通孔１ａを通ってチャンバー１の外部に引き出される。
The other end portions of the three
上記したように、本発明の一具体例のウエハ加熱ヒータでは、３つの発熱回路に対して合計４個の端子部を設けるだけでよいので、ウエハ載置台の下面側をコンパクトな構造にすることができ、円筒状の支持部材の内側を簡素化することができる。なお、本発明の加熱ヒータは上記したようにウエハ載置台に埋設されている全ての発熱回路の一端部を共通の端子部に接続させる構造に限定されるものではなく、一部の発熱回路の一端部だけを共通の端子部に接続させる構造でもよい。また、複数の発熱回路の端部群と共通端子との接続は、上記したメタライズ層を介した接続に限定されるものではなく、カシメ、溶接、ロウ接、ネジ止め等の接合手段で接続してもよい。 As described above, in the wafer heater according to one specific example of the present invention, it is only necessary to provide a total of four terminal portions for the three heating circuits, so that the lower surface side of the wafer mounting table has a compact structure. And the inside of the cylindrical support member can be simplified. Note that the heater of the present invention is not limited to a structure in which one end portion of all the heating circuits embedded in the wafer mounting table is connected to a common terminal portion as described above. A structure in which only one end portion is connected to a common terminal portion may be used. Further, the connection between the end groups of the plurality of heat generating circuits and the common terminal is not limited to the connection through the metallized layer described above, but is connected by a joining means such as caulking, welding, brazing, or screwing. May be.
以上、本発明の加熱ヒータについて一具体例を挙げて説明したが、本発明は係る具体例に限定されるものではなく、本発明の主旨から逸脱しない範囲の種々の態様で実施することが可能である。すなわち、本発明の技術的範囲は、特許請求の範囲及び均等物に及ぶものである。 As mentioned above, although the specific example was given and demonstrated about the heater of this invention, this invention is not limited to the example which concerns, It can implement in the various aspects of the range which does not deviate from the main point of this invention. It is. That is, the technical scope of the present invention extends to the claims and equivalents.
［実施例１］
窒化アルミニウム粉末９９.５質量部に焼結助剤として酸化イットリウム０.５質量部を加え、更にバインダー、有機溶剤を加えて、ボールミル混合することにより、スラリーを作製した。得られたスラリーをスプレードライ法で噴霧することにより顆粒を作製し、これをプレス成形して３枚の成形体を作製した。これら成形体を窒素雰囲気中にて７００℃の条件で脱脂した後、窒素雰囲気中において１８５０℃で焼結して、３枚の窒化アルミニウム焼結体を得た。得られた焼結体を、直径３３０ｍｍ、厚み８ｍｍの円板状に加工した。このときの表面粗さはＲａで０.８μｍ、平面度は５０μｍであった。
[Example 1]
A slurry was prepared by adding 0.5 parts by mass of yttrium oxide as a sintering aid to 99.5 parts by mass of the aluminum nitride powder, adding a binder and an organic solvent, and mixing them with a ball mill. The obtained slurry was sprayed by a spray drying method to produce granules, which were press-molded to produce three molded bodies. These compacts were degreased at 700 ° C. in a nitrogen atmosphere and then sintered at 1850 ° C. in a nitrogen atmosphere to obtain three aluminum nitride sintered bodies. The obtained sintered body was processed into a disk shape having a diameter of 330 mm and a thickness of 8 mm. At this time, the surface roughness Ra was 0.8 μm, and the flatness was 50 μm.
これら３枚の窒化アルミニウム焼結体のうち、最下部となる１枚目の焼結体の上面の直径１６０ｍｍの中央部の円形ゾーンにＷペーストで線幅４ｍｍ、厚み２０μｍの円形同心円パターンをスクリーン印刷により塗布し、中間部となる２枚目の焼結体の上面の直径１６０ｍｍの中央部の円形ゾーンよりも外周側の環状ゾーンにＷペーストで線幅４ｍｍ、厚み２０μｍの環状同心円パターンをスクリーン印刷により塗布した。そして、これらＷペーストを窒素雰囲気中の７００℃での脱脂と１８３０℃での焼成を行って発熱回路を形成した。なお、上記２枚目の外周側の環状ゾーンの発熱回路の両端部は、中央部の円形ゾーンの中心部分まで、該中央部の円形ゾーンのほぼ全面を覆う幅広の引き込み線で引き込み、そのうちの一方は、３枚の焼結体を重ね合わせた時に上記の１枚目の中央部の円形ゾーンの発熱回路の一端部に重なる位置に配した。 Of these three aluminum nitride sintered bodies, a circular concentric pattern having a line width of 4 mm and a thickness of 20 μm is screened with a W paste in a circular zone at the center of the diameter of 160 mm on the upper surface of the first sintered body as the lowermost part. An annular concentric pattern with a line width of 4 mm and a thickness of 20 μm is applied to the annular zone on the outer peripheral side of the circular zone at the center of the upper surface of the 160 mm diameter central portion of the upper surface of the second sintered body as an intermediate portion by screen printing. It was applied by printing. These W pastes were degreased at 700 ° C. in a nitrogen atmosphere and baked at 1830 ° C. to form a heating circuit. In addition, both ends of the heat generating circuit of the annular zone on the outer peripheral side of the second sheet are drawn into a central portion of the circular zone at the central portion by a wide lead line covering almost the entire surface of the central circular zone, One was arranged at a position overlapping one end of the heat generating circuit in the circular zone at the center of the first sheet when the three sintered bodies were superposed.
そして、２枚目の焼結体と最上部となる３枚目の焼結体の下面に接着用の窒化アルミニウムを主成分とする接着材料を塗布して脱脂した後、これら３枚の焼結体を重ね合わせて接合させた。このようにして得た接合体に対してその下面に、上記２つの発熱回路の一端部同士を貫通するテーパー構造の有底穴を設け、その内壁面を厚み２０μｍのＷ製のメタライズ層で被覆した。この時、テーパー構造の有底穴における縮径部の内径は１.５ｍｍ、開口部の内径は６.０ｍｍとなった。そして、このテーパー構造の有底穴に先端部が切頭円錐形状を有するＷ製の外部端子を嵌合させた。一方、上記２つの発熱回路の他端部については、各々を貫通する有底穴をザグリ加工してＷ製の外部端子を嵌入した。このようにして試料１のウエハ載置台を作製した。
Then, after applying an adhesive material mainly composed of aluminum nitride for adhesion to the lower surface of the second sintered body and the uppermost third sintered body, degreasing, and then sintering these three sheets The bodies were overlapped and joined. The bonded body thus obtained is provided with a bottomed hole having a taper structure penetrating one end portions of the two heat generating circuits on the lower surface thereof, and the inner wall surface thereof is covered with a W metallization layer having a thickness of 20 μm. did. At this time, the inner diameter of the reduced diameter portion of the bottomed hole having a tapered structure was 1.5 mm, and the inner diameter of the opening portion was 6.0 mm. And the external terminal made from W which a front-end | tip part has a truncated cone shape was fitted to the bottomed hole of this taper structure. On the other hand, for the other end portions of the two heat generating circuits, a bottomed hole penetrating each other was counterbored and a W-made external terminal was inserted. In this way, a wafer mounting table for
比較のため、直径３３０ｍｍ、厚み１２ｍｍの２枚の円板状の窒化アルミニウム焼結体を作製し、下側の焼結体の上面の直径１６０ｍｍの中央部の円形ゾーンとこれよりも外周側の環状ゾーンにそれぞれＷペーストで線幅４ｍｍ、厚み２０μｍの円形同心円パターン及び環状同心円パターンをスクリーン印刷により塗布し、上記と同様に脱脂及び焼成を行って発熱回路を形成した。なお、外周側の発熱回路はその両端部を中央部の円形ゾーンに引き込んだため、中央部の円形ゾーンの発熱回路の回路パターンが一部不均一になった。そして、もう一方の上側の焼結体の下面に上記と同様に接着材料を塗布して脱脂した後、これら２枚の焼結体を重ね合わせて接合させた。得られた接合体の下面に、上記の２つの発熱回路の各々の両端部を貫通する４つの有底穴をザグリ加工し、４本のＷ製の外部端子を嵌入した。このようにして試料２のウエハ載置台を作製した。 For comparison, two disk-shaped aluminum nitride sintered bodies having a diameter of 330 mm and a thickness of 12 mm were prepared, and a circular zone in the center of the upper surface of the lower sintered body having a diameter of 160 mm and an outer peripheral side thereof were formed. A circular concentric pattern and a circular concentric pattern having a line width of 4 mm and a thickness of 20 μm were each applied to the annular zone by screen printing with W paste, and degreasing and firing were performed in the same manner as above to form a heating circuit. In addition, since both ends of the heat generating circuit on the outer peripheral side were drawn into the central circular zone, the circuit pattern of the heat generating circuit in the central circular zone was partially uneven. And after apply | coating an adhesive material to the lower surface of the other upper sintered body and degreasing similarly to the above, these two sintered bodies were piled up and joined. Four bottomed holes penetrating both ends of each of the two heat generating circuits were counterbored on the lower surface of the obtained joined body, and four W external terminals were fitted. In this way, a wafer mounting table for Sample 2 was produced.
これら試料１及び２のウエハ載置台の各々に対して、両端部にフランジ部を有する内径６０ｍｍ、高さ１５０ｍｍ、肉厚２ｍｍのＡｌＮ製の円筒状の支持部材の一端部をネジで接合した。なお、フランジ部とウエハ載置台の接合面との間はＯ−リングを用いて気密にシールした。そして、支持部材の内側に位置する端子部に引出線を接続すると共に、支持部材の他端部をチャンバーの底部にＯ−リングで気密シールした状態でクランプを用いて固定した。
One end of a cylindrical support member made of AlN having an inner diameter of 60 mm, a height of 150 mm, and a thickness of 2 mm having flange portions at both ends was joined to each of the wafer mounting tables of
得られた試料１及び２の加熱ヒータの各々に対して、発熱回路に給電してウエハ載置台を加熱して載置面の均熱性を評価した。具体的には、加熱ヒータの発熱回路に給電して加熱ヒータを５００℃に加熱した。この状態で、センサレー社製の３００ｍｍ、１７点ウエハ測温計を用いてウエハ載置面の温度分布を測定した。その結果、温度の高低差は試料２では１５℃であるのに対して試料１は１０℃であり、本発明の要件を満たす試料１の方が本発明の要件を満たしていない試料２よりも均熱性に優れていることが分かった。
With respect to each of the obtained heaters of
［実施例２］
３ゾーンに区分した場合の均熱性について評価するため、上記実施例１と同様にして直径３３０ｍｍで厚みがそれぞれ８ｍｍ、５ｍｍ、５ｍｍ、６ｍｍの４枚の窒化アルミニウム焼結体を作製し、最下部となる厚み６ｍｍの焼結体の上面の直径１１０ｍｍの中央部の円形ゾーンにＷペーストで線幅４ｍｍ、厚み２０μｍの円形同心円パターンをスクリーン印刷により塗布し、下から２枚目の厚み５ｍｍの焼結体の上面の直径１１０ｍｍの中央部の円形ゾーンよりも外周側の幅５５ｍｍの環状ゾーンにＷペーストで線幅４ｍｍ、厚み２０μｍの環状同心円パターンをスクリーン印刷により塗布し、下から３枚目の厚み５ｍｍの焼結体の上面の直径２２０ｍｍの中央部円形ゾーンよりも外周側の最外周環状ゾーンにＷペーストで線幅４ｍｍ、厚み２０μｍの環状同心円パターンをスクリーン印刷により塗布した。
[Example 2]
In order to evaluate the thermal uniformity when it is divided into three zones, four aluminum nitride sintered bodies having a diameter of 330 mm and thicknesses of 8 mm, 5 mm, 5 mm, and 6 mm, respectively, were prepared in the same manner as in Example 1 above. A circular concentric pattern having a line width of 4 mm and a thickness of 20 μm is applied by screen printing to a circular zone at the center of a diameter of 110 mm on the upper surface of the sintered body having a thickness of 6 mm, and the second sheet from the bottom is baked with a thickness of 5 mm. An annular concentric pattern having a line width of 4 mm and a thickness of 20 μm was applied by screen printing to an annular zone having a width of 55 mm on the outer peripheral side of the central circular zone having a diameter of 110 mm on the upper surface of the bonded body by screen printing. A line width of 4 mm and a thickness of 2 on the outermost peripheral annular zone on the outer peripheral side of the central circular zone having a diameter of 220 mm on the upper surface of the sintered body having a thickness of 5 mm and a thickness of 2 A 0 μm annular concentric pattern was applied by screen printing.
なお、上記の２つの環状同心円パターンの発熱回路の両端部は中央部の円形ゾーンの中心部分まで、各々内側ゾーンのほぼ全面を覆う幅広の引き込み線で引き込み、各両端部のうちの一方は、４枚の焼結体を重ね合わせた時に上記の最下部の中央部の円形ゾーンの発熱回路の一端部に重なる位置に配した。以降は上記実施例１と同様にＷペーストの脱脂及び焼成を行い、最下部を除く３枚の焼結体の下面に接着材料を塗布して脱脂してから４枚の焼結体を重ね合わせて接合させた。更にこれら３つの発熱回路の各々の両端部に対して、実施例１と同様にして１個のＷ製の共通端子と３個の個別の端子に接合させた。このようにして試料３のウエハ載置台を作製した。 In addition, both ends of the heat generating circuit of the two annular concentric patterns described above are drawn to the central portion of the central circular zone with a wide lead-in line covering almost the entire inner zone, and one of the both ends is When the four sintered bodies were superposed, they were arranged at a position overlapping one end of the heating circuit in the circular zone at the center of the lowermost part. Thereafter, the W paste is degreased and fired in the same manner as in Example 1 above, the adhesive material is applied to the lower surface of the three sintered bodies except the lowermost part, and the four sintered bodies are superposed after degreasing. And joined. Further, both ends of each of these three heat generating circuits were joined to one common terminal made of W and three individual terminals in the same manner as in Example 1. In this way, a wafer mounting table for Sample 3 was produced.
比較のため、直径３３０ｍｍ、厚み１２ｍｍの２枚の円板状の窒化アルミニウム焼結体を作製し、下側の焼結体の上面の直径１１０ｍｍの中央部の円形ゾーンと、これよりも外周側の幅５５ｍｍの環状ゾーンと、その外周側の最外周環状ゾーンとにそれぞれＷペーストで線幅４ｍｍ、厚み２０μｍの円形同心円パターン、並びに中間部及び最外周部の環状同心円パターンをスクリーン印刷により塗布し、上記と同様に脱脂及び焼成を行って発熱回路を形成した。なお、外周側の２つの発熱回路の両端部を中央部に引き込んだため、中央部及び中間環状部の発熱回路の回路パターンが一部不均一になった。そして、もう一方の上側の焼結体の下面に上記と同様に接着材料を塗布して脱脂した後、これら２枚の焼結体を重ね合わせて接合させた。得られた接合体の下面に、上記の３つの発熱回路の各々の両端部を貫通する６つの有底穴をザグリ加工し、６本のＷ製の外部端子を嵌入した。このようにして試料４のウエハ載置台を作製した。 For comparison, two disk-shaped aluminum nitride sintered bodies having a diameter of 330 mm and a thickness of 12 mm were prepared, and a circular zone in the central portion of the upper surface of the lower sintered body having a diameter of 110 mm and an outer peripheral side thereof. A circular concentric pattern having a line width of 4 mm and a thickness of 20 μm, and a circular concentric pattern of the middle part and the outermost part are applied by screen printing to the annular zone having a width of 55 mm and the outermost circumferential annular zone on the outer circumferential side thereof, respectively. In the same manner as above, degreasing and baking were performed to form a heat generating circuit. In addition, since both ends of the two heat generating circuits on the outer peripheral side were drawn into the central part, the circuit patterns of the heat generating circuits in the central part and the intermediate annular part were partially non-uniform. And after apply | coating an adhesive material to the lower surface of the other upper sintered body and degreasing similarly to the above, these two sintered bodies were piled up and joined. Six bottomed holes penetrating both ends of each of the three heat generating circuits were counterbored on the lower surface of the obtained joined body, and six W external terminals were fitted. In this manner, a wafer mounting table for Sample 4 was produced.
更に比較のため、直径３３０ｍｍ、厚み８ｍｍの３枚の円板状の窒化アルミニウム焼結体を作製し、最下部の焼結体の上面の直径１１０ｍｍの中央部の円形ゾーンと、最外周部の幅５５ｍｍの最外周環状ゾーンとにそれぞれＷペーストで線幅４ｍｍ、厚み２０μｍの円形同心円パターン及び環状同心円パターンをスクリーン印刷により塗布し、中間部の焼結体の上面の直径１１０ｍｍの中央部の円形ゾーンよりも外周側の幅５５ｍｍの環状ゾーンにＷペーストで線幅４ｍｍ、厚み２０μｍの環状同心円パターンをスクリーン印刷により塗布した。これらＷペーストを上記と同様に脱脂及び焼成を行って発熱回路を形成した。なお、最下部の最外周側の発熱回路の両端部を中央部に引き込んだため、中央部の発熱回路の回路パターンが一部不均一になった。そして、中間部と最上部の焼結体の下面に上記と同様に接着材料を塗布して脱脂した後、これら３枚の焼結体を重ね合わせて接合させた。得られた接合体の下面に、上記の３つの発熱回路の各々の両端部を貫通する６つの有底穴をザグリ加工し、６本のＷ製の外部端子を嵌入した。このようにして試料５のウエハ載置台を作製した。 Further, for comparison, three disk-shaped aluminum nitride sintered bodies having a diameter of 330 mm and a thickness of 8 mm were prepared, and a circular zone in the center of 110 mm in diameter on the upper surface of the lowermost sintered body and an outermost peripheral portion were formed. A circular concentric pattern and a circular concentric pattern having a line width of 4 mm and a thickness of 20 μm are each applied by screen printing to the outermost peripheral annular zone having a width of 55 mm by screen printing. An annular concentric pattern having a line width of 4 mm and a thickness of 20 μm was applied by screen printing to an annular zone having a width of 55 mm on the outer peripheral side of the zone with a W paste. These W pastes were degreased and fired in the same manner as described above to form a heating circuit. In addition, since both ends of the heat generating circuit on the outermost peripheral side at the lowermost part were drawn into the central part, the circuit pattern of the heat generating circuit in the central part was partially uneven. And after apply | coating an adhesive material to the lower surface of the sintered compact of the intermediate | middle part and the uppermost part and degreasing similarly to the above, these 3 sintered compacts were piled up and joined. Six bottomed holes penetrating both ends of each of the three heat generating circuits were counterbored on the lower surface of the obtained joined body, and six W external terminals were fitted. In this way, a wafer mounting table for Sample 5 was produced.
これら試料３〜５のウエハ載置台の各々に対して、実施例１と同様に支持部材を介してチャンバーに固定した。そして、実施例１と同様にして温度分布を測定した。その結果、温度高低差は試料３では８℃、試料４では１６℃、試料５では１４℃であり、本発明の要件を満たす試料３が最も均熱性に優れていた。
Each of the wafer mounting tables of Samples 3 to 5 was fixed to the chamber via a support member in the same manner as in Example 1. Then, the temperature distribution was measured in the same manner as in Example 1. As a result, the temperature difference was 8 ° C. for
［実施例３］
６ゾーンに区分した場合の均熱性について評価するため、上記実施例１と同様にして直径３３０ｍｍで厚みがそれぞれ８ｍｍ、５ｍｍ、５ｍｍ、６ｍｍの４枚の窒化アルミニウム焼結体を作製し、最下部と下から２枚目の焼結体の上面については実施例２と同様にＷペーストでスクリーン印刷し、下から３枚目の厚み５ｍｍの焼結体の上面の直径２２０ｍｍの中央部円形ゾーンよりも外周側の最外周環状部については、周方向に４等分した４つの扇形ゾーンにそれぞれＷペーストで線幅４ｍｍ、厚み２０μｍの環状同心円パターンをスクリーン印刷により塗布した。
[Example 3]
In order to evaluate the thermal uniformity when it is divided into 6 zones, four aluminum nitride sintered bodies having a diameter of 330 mm and thicknesses of 8 mm, 5 mm, 5 mm, and 6 mm, respectively, were prepared in the same manner as in Example 1 above. The upper surface of the second sintered body from the bottom was screen-printed with W paste in the same manner as in Example 2 and from the central circular zone with a diameter of 220 mm on the upper surface of the third 5 mm thick sintered body from the bottom. As for the outermost peripheral annular portion on the outer peripheral side, an annular concentric pattern having a line width of 4 mm and a thickness of 20 μm was applied to each of four fan-shaped zones divided into four equal parts in the circumferential direction by screen printing.
なお、上記の１つの環状同心円パターン及び４つの扇形パターンの発熱回路の各々の両端部は中央部の円形ゾーンの中心部分まで、各々内側ゾーンのほぼ全面を覆う幅広の引き込み線で引き込み、各々の両端部のうちの一方は、４枚の焼結体を重ね合わせた時に上記の最下部の中央部の円形ゾーンの発熱回路の一端部に重なる位置に配した。以降は上記実施例１と同様にＷペーストの脱脂及び焼成を行い、最下部を除く３枚の焼結体の下面に接着材料を塗布して脱脂してから４枚の焼結体を重ね合わせて接合させた。更にこれら６つの発熱回路の各々の両端部に対して、実施例１と同様にして１個のＷ製の共通端子と６個の個別の端子に接合させた。 In addition, each end of each of the one annular concentric pattern and the four fan-shaped heating circuits is drawn to a central part of the circular zone at the center by a wide lead line covering almost the entire inner zone, One of the two end portions was disposed at a position overlapping one end portion of the heating circuit in the circular zone at the center of the lowermost portion when the four sintered bodies were overlapped. Thereafter, the W paste is degreased and fired in the same manner as in Example 1 above, the adhesive material is applied to the lower surface of the three sintered bodies except the lowermost part, and the four sintered bodies are superposed after degreasing. And joined. Further, both ends of each of these six heat generating circuits were joined to one common terminal made of W and six individual terminals in the same manner as in Example 1.
このようにして作製した試料６のウエハ載置台に対して、実施例１と同様に支持部材を介してチャンバーに固定した。そして、実施例１と同様にして温度分布を測定した。その結果、試料６の温度高低差は４℃となり、ゾーン数を増やすことによって均熱性が向上することが分かった。
［実施例４］
ウエハ載置台の材質が異なる場合の均熱性について評価するため、窒化アルミニウム製に代えてアルミナ製にした以外は試料３と同様にして試料７のウエハ載置台を作製した。更に、３ゾーンに設けた３つの発熱回路の各々の両端部のうちの一方を１個の共通端子に接合することに代えて別々の３個の端子に接合した以外は上記試料７のウエハ載置台と同様にして試料８のウエハ載置台を作製した。
The wafer mounting table of the sample 6 thus manufactured was fixed to the chamber via a support member in the same manner as in Example 1. Then, the temperature distribution was measured in the same manner as in Example 1. As a result, it was found that the temperature difference of the sample 6 was 4 ° C., and that the temperature uniformity was improved by increasing the number of zones.
[Example 4]
In order to evaluate thermal uniformity when the material of the wafer mounting table is different, a wafer mounting table of Sample 7 was manufactured in the same manner as Sample 3 except that it was made of alumina instead of aluminum nitride. Further, the sample 7 is mounted on the wafer except that one of the two end portions of each of the three heating circuits provided in the three zones is joined to three separate terminals instead of joining to one common terminal. A wafer mounting table for Sample 8 was fabricated in the same manner as the mounting table.
これら試料７及び８のウエハ載置台の各々に対して、実施例１と同様に支持部材を介してチャンバーに固定し、実施例１と同様にして温度分布を測定した。その結果、温度高低差は試料７では１６℃、試料８では１８℃となり、材質を変えても本発明の効果が奏されることが分かった。また、アルミナ製よりもＡｌＮ製の方が顕著な効果が得られることが分かった。
Each of the wafer mounting tables of Samples 7 and 8 was fixed to the chamber via a support member in the same manner as in Example 1, and the temperature distribution was measured in the same manner as in Example 1. As a result, the temperature difference was 16 ° C. for
１ チャンバー
１ａ 貫通孔
２ ウエハ加熱ヒータ
１０ ウエハ載置台
１０ａ ウエハ載置面
１０ｂ 有底穴
１１ 第１発熱回路
１２ 第２発熱回路
１３ 第３発熱回路
１１ａ 第１発熱回路の一端部
１２ａ 第２発熱回路の一端部
１３ａ 第３発熱回路の一端部
１４ 共通端子部
１４ａ 先端部
１４ｂ 突出部
１５ メタライズ層
１６ 第１発熱回路の他端部の端子
１７ 第２発熱回路の他端部の端子
１８ 第３発熱回路の他端部の端子
１９ 引出線
２０ 支持部材
Ｗ 半導体ウエハ
DESCRIPTION OF
Claims (5)
It has further the cylindrical support member which supports the mounting table from the lower surface side, The said terminal part is provided in the inside of the said cylindrical support member in any one of Claims 1-4. The heater described.
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| CN112673709A (en) * | 2018-10-11 | 2021-04-16 | 日本发条株式会社 | Stage, film forming apparatus, and film processing apparatus |
| WO2022162729A1 (en) * | 2021-01-26 | 2022-08-04 | 住友電気工業株式会社 | Heater |
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| JP2006165181A (en) * | 2004-12-06 | 2006-06-22 | Toshiba Ceramics Co Ltd | Structure for mounting feeding terminal of ceramic base with metal members embedded therein |
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| JP2005303014A (en) * | 2004-04-12 | 2005-10-27 | Ngk Insulators Ltd | Substrate heating device |
| JP2006114250A (en) * | 2004-10-12 | 2006-04-27 | Toshiba Ceramics Co Ltd | Power supply terminal installation structure of metal member embedding ceramic substrate |
| JP2006165181A (en) * | 2004-12-06 | 2006-06-22 | Toshiba Ceramics Co Ltd | Structure for mounting feeding terminal of ceramic base with metal members embedded therein |
| JP2008243990A (en) * | 2007-03-26 | 2008-10-09 | Ngk Insulators Ltd | Substrate heating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190126238A (en) | 2018-05-01 | 2019-11-11 | 니혼도꾸슈도교 가부시키가이샤 | Ceramic heater |
| TWI713408B (en) * | 2018-05-01 | 2020-12-11 | 日商日本特殊陶業股份有限公司 | Ceramic heater |
| US10879089B2 (en) | 2018-05-01 | 2020-12-29 | Ngk Spark Plug Co., Ltd. | Ceramic heater |
| CN112673709A (en) * | 2018-10-11 | 2021-04-16 | 日本发条株式会社 | Stage, film forming apparatus, and film processing apparatus |
| CN112673709B (en) * | 2018-10-11 | 2024-02-02 | 日本发条株式会社 | Stage, film forming apparatus, and film processing apparatus |
| WO2022162729A1 (en) * | 2021-01-26 | 2022-08-04 | 住友電気工業株式会社 | Heater |
| KR20230130666A (en) | 2021-01-26 | 2023-09-12 | 스미토모덴키고교가부시키가이샤 | heater |
| JP7468710B2 (en) | 2021-01-26 | 2024-04-16 | 住友電気工業株式会社 | heater |
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