JP2017162878A - 基板支持装置 - Google Patents
基板支持装置 Download PDFInfo
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- JP2017162878A JP2017162878A JP2016043633A JP2016043633A JP2017162878A JP 2017162878 A JP2017162878 A JP 2017162878A JP 2016043633 A JP2016043633 A JP 2016043633A JP 2016043633 A JP2016043633 A JP 2016043633A JP 2017162878 A JP2017162878 A JP 2017162878A
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 84
- 230000002093 peripheral effect Effects 0.000 claims abstract description 21
- 239000011810 insulating material Substances 0.000 claims abstract description 19
- 230000000149 penetrating effect Effects 0.000 claims abstract description 5
- 238000003780 insertion Methods 0.000 claims description 9
- 230000037431 insertion Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 abstract description 44
- 239000010408 film Substances 0.000 description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 7
- 238000005219 brazing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/016—Heaters using particular connecting means
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
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- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Surface Heating Bodies (AREA)
Abstract
【解決手段】セラミックスヒータ100は、基板を支持する支持面を上面に有する基材10と、基材10に埋設された電極20と、基材10の下面に取り付けられ、断熱性材料からなる基材支持部材30と、基材支持部材30の周壁34に形成され、それぞれが、上下方向に貫通する1つの貫通孔35を挿通して、電極20と電気的に接続された給電ロッド40とを備える。
【選択図】図1
Description
本発明の基板支持装置の第1の実施形態に係るセラミックスヒータ100について、図1を参照して説明する。
図2に示すように、セラミックスヒータ100において、蓋部材50に上下方向に貫通し、給電ロッド40が1本ずつそれぞれ挿通される貫通孔52を形成し、この貫通孔52と給電ロッド40との隙間をシール剤などの閉塞部材53で閉塞させ、拡径部33と蓋部材50をOリング51を介して固定してもよい。
本発明の基板支持装置の第2の実施形態に係るセラミックスヒータ100Aについて、図3を参照して説明する。このセラミックスヒータ100Aは、上述したセラミックスヒータ100と類似するので、相違点についてのみ説明する。
本発明の基板支持装置の第3の実施形態に係るセラミックスヒータ100Bについて、図4を参照して説明する。このセラミックスヒータ100Bは、上述したセラミックスヒータ100,100Aと類似するので、相違点についてのみ説明する。
本発明の基板支持装置の第4の実施形態に係るセラミックスヒータ100Cについて、図5を参照して説明する。このセラミックスヒータ100Cは、上述したセラミックスヒータ100と類似するので、相違点についてのみ説明する。
図6に示すように、セラミックスヒータ100Cにおいて、給電ワイヤ90がそれぞれ接続された複数の接続部材92と、これら接続部材92を保持する保持部材93を備えていてもよい。
Claims (6)
- 基板を支持する支持面を上面に有する基材と、
前記基材に埋設された電極と、
前記基材の下面に取り付けられ、断熱性材料からなる基材支持部材と、
前記基材支持部材の周壁に形成され、それぞれが、上下方向に貫通する1つの貫通孔を挿通して、前記電極と電気的に接続された給電ロッド又は給電ワイヤとを備えたことを特徴とする基板支持装置。 - 前記基材支持部材の下面に取り付けられ、上下方向に貫通し、前記給電ロッド又は給電ワイヤが挿通された貫通孔を有する蓋部材を備え、
前記給電ロッド又は給電ワイヤと前記蓋部材の貫通孔との隙間、及び、前記基材支持部材と前記蓋部材との隙間が閉塞されていることを特徴とする請求項1に記載の基板支持装置。 - 基板を支持する支持面を上面に有する基材と、
前記基材に埋設された電極と、
前記基材の下面に取り付けられ、断熱性材料からなる中空の基材支持部材と、
前記基材支持部材の内周壁面に上下方向に延在するように形成された1又は電気的に独立した複数の導電性膜と、
前記電極と前記導電性膜とを電気的に接続する接続部材とを備えたことを特徴とする基板支持装置。 - 基板を支持する支持面を上面に有する基材と、
前記基材に埋設された電極と、
前記基材の下面に取り付けられた中空の基材支持部材と、
前記基材支持部材の中空内に挿入され、断熱性材料からなる挿入部材と、
前記挿入部材の外周壁面に上下方向に延在するように形成された1又は電気的に独立した複数の導電性膜と、
前記電極と前記導電性膜とを電気的に接続する接続部材とを備えたことを特徴とする基板支持装置。 - 基板を支持する支持面を上面に有する基材と、
前記基材に埋設された電極と、
前記基材の下面に取り付けられた中空の基材支持部材と、
前記基材支持部材の中空を挿通し、前記電極と電気的に接続された可撓性を有する給電ワイヤとを備えたことを特徴とする基板支持装置。 - 前記電極及び前記給電ワイヤがそれぞれ複数存在し、
前記給電ワイヤがそれぞれ接続され、導電性材料からなる複数の接続部材と、
前記複数の接続部材を保持し、絶縁性材料からなる保持部材とを備えることを特徴とする請求項5に記載の基板支持装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2016043633A JP6674800B2 (ja) | 2016-03-07 | 2016-03-07 | 基板支持装置 |
PCT/JP2017/004138 WO2017154435A1 (ja) | 2016-03-07 | 2017-02-06 | 基板支持装置 |
KR1020177036381A KR102052811B1 (ko) | 2016-03-07 | 2017-02-06 | 기판지지장치 |
US15/742,346 US11004715B2 (en) | 2016-03-07 | 2017-02-06 | Substrate supporting device |
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JP2016043633A JP6674800B2 (ja) | 2016-03-07 | 2016-03-07 | 基板支持装置 |
Publications (2)
Publication Number | Publication Date |
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JP2017162878A true JP2017162878A (ja) | 2017-09-14 |
JP6674800B2 JP6674800B2 (ja) | 2020-04-01 |
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JP2016043633A Active JP6674800B2 (ja) | 2016-03-07 | 2016-03-07 | 基板支持装置 |
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US (1) | US11004715B2 (ja) |
JP (1) | JP6674800B2 (ja) |
KR (1) | KR102052811B1 (ja) |
WO (1) | WO2017154435A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019175883A (ja) * | 2018-03-26 | 2019-10-10 | 日本特殊陶業株式会社 | 加熱装置 |
JP2020035603A (ja) * | 2018-08-29 | 2020-03-05 | 日本碍子株式会社 | セラミックヒータ及び筒状シャフトの製法 |
WO2020189264A1 (ja) * | 2019-03-18 | 2020-09-24 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
JP2020161284A (ja) * | 2019-03-26 | 2020-10-01 | 日本碍子株式会社 | セラミックヒータ |
WO2021010062A1 (ja) * | 2019-07-16 | 2021-01-21 | 日本碍子株式会社 | シャフト付きセラミックヒータ |
JPWO2021010063A1 (ja) * | 2019-07-16 | 2021-01-21 | ||
JP2021031743A (ja) * | 2019-08-27 | 2021-03-01 | 京セラ株式会社 | ウェハ用部材及びウェハ用装置 |
CN113207199A (zh) * | 2020-02-03 | 2021-08-03 | 日本碍子株式会社 | 陶瓷加热器 |
JP2021523559A (ja) * | 2018-05-03 | 2021-09-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ペデスタル用のrf接地構成 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US11083050B2 (en) | 2017-11-21 | 2021-08-03 | Watlow Electric Manufacturing Company | Integrated heater and method of manufacture |
TWI697253B (zh) * | 2018-05-22 | 2020-06-21 | 美商瓦特洛威電子製造公司 | 一體式加熱器及製造方法 |
US11818813B2 (en) | 2018-09-28 | 2023-11-14 | Kyocera Corporation | Wafer-use member, wafer-use system, and method for manufacturing wafer-use member |
WO2021145110A1 (ja) * | 2020-01-15 | 2021-07-22 | 日本特殊陶業株式会社 | 保持装置 |
US11894240B2 (en) * | 2020-04-06 | 2024-02-06 | Tokyo Electron Limited | Semiconductor processing systems with in-situ electrical bias |
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- 2017-02-06 WO PCT/JP2017/004138 patent/WO2017154435A1/ja active Application Filing
- 2017-02-06 US US15/742,346 patent/US11004715B2/en active Active
- 2017-02-06 KR KR1020177036381A patent/KR102052811B1/ko active IP Right Grant
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WO2017154435A1 (ja) | 2017-09-14 |
US11004715B2 (en) | 2021-05-11 |
JP6674800B2 (ja) | 2020-04-01 |
US20180204754A1 (en) | 2018-07-19 |
KR102052811B1 (ko) | 2019-12-05 |
KR20180008740A (ko) | 2018-01-24 |
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