JP4421595B2 - 加熱装置 - Google Patents
加熱装置 Download PDFInfo
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- JP4421595B2 JP4421595B2 JP2006310521A JP2006310521A JP4421595B2 JP 4421595 B2 JP4421595 B2 JP 4421595B2 JP 2006310521 A JP2006310521 A JP 2006310521A JP 2006310521 A JP2006310521 A JP 2006310521A JP 4421595 B2 JP4421595 B2 JP 4421595B2
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- 238000010438 heat treatment Methods 0.000 title claims description 160
- 239000000919 ceramic Substances 0.000 claims description 232
- 239000000758 substrate Substances 0.000 claims description 74
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 39
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 25
- 239000004917 carbon fiber Substances 0.000 claims description 25
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 description 36
- 239000000843 powder Substances 0.000 description 25
- 238000005219 brazing Methods 0.000 description 24
- 239000002994 raw material Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 230000035882 stress Effects 0.000 description 18
- 229910010293 ceramic material Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 13
- 239000012298 atmosphere Substances 0.000 description 11
- 239000013590 bulk material Substances 0.000 description 11
- 238000005245 sintering Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000005304 joining Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 description 6
- 238000007373 indentation Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2214/00—Aspects relating to resistive heating, induction heating and heating using microwaves, covered by groups H05B3/00, H05B6/00
- H05B2214/04—Heating means manufactured by using nanotechnology
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
導電性セラミックス部材17Bの平面形状は、特に限定されない。導電性セラミックス部材17Bから高周波電極12に流れる電流を等配分できるように、円形や正方形などのような中心軸対称の形状とすることが、より好ましい。
11 セラミックス基体
11a 加熱面
11b 裏面
11c 導通穴
12 高周波電極
13 端子
14 スリーブ
15 応力緩和材
16 ろう材
17A〜17E 導電性セラミックス部材
Claims (7)
- 絶縁性セラミックスを主成分とする板状の基体と、
この基体の一方の表面近傍に埋設された平板状の電極と、
この基体の他方の表面から前記電極に向けて穿設された端子穴に挿入され、前記電極と
導通する端子とを備え、かつ、
前記端子穴の底面と、前記電極との間に、前記基体の絶縁性セラミックスと同等の熱膨
張係数を有する導電性セラミックス部材が前記電極に接続されて前記基体に埋設され、こ
の導電性セラミックス部材を介して前記電極と前記端子とが電気的に接続されており、
前記導電性セラミックス部材は板状であり、その平面の長さが、前記端子穴の底面の直
径よりも大きく、炭素繊維を含む窒化アルミニウムよりなる
ことを特徴とする加熱装置。 - 絶縁性セラミックスを主成分とする板状の基体と、
この基体の一方の表面近傍に埋設された平板状の電極と、
この基体の他方の表面から前記電極に向けて穿設された端子穴に挿入され、前記電極と
導通する端子とを備え、かつ、
前記端子穴の底面と、前記電極との間に、前記基体の絶縁性セラミックスと同等の熱膨
張係数を有する導電性セラミックス部材が前記電極に接続されて前記基体に埋設され、こ
の導電性セラミックス部材を介して前記電極と前記端子とが電気的に接続されており、
前記導電性セラミックス部材は、前記端子穴の底面部及び側面部を含む凹形状であり、
この端子穴の側面に、ねじ溝が形成されており、炭素繊維を含む窒化アルミニウムよりなる
ことを特徴とする加熱装置。 - 絶縁性セラミックスを主成分とする板状の基体と、
この基体の一方の表面近傍に埋設された平板状の電極と、
この基体の他方の表面から前記電極に向けて穿設された端子穴に挿入され、前記電極と
導通する端子とを備え、かつ、
前記端子穴の底面と、前記電極との間に、前記基体の絶縁性セラミックスと同等の熱膨
張係数を有する導電性セラミックス部材が前記電極に接続されて前記基体に埋設され、こ
の導電性セラミックス部材を介して前記電極と前記端子とが電気的に接続されており、
前記導電性セラミックス部材は、前記端子穴の底面に頂面が露出する凸形状であり、こ
の頂面の長さが、前記端子穴の底面の直径よりも小さい
ことを特徴とする加熱装置。 - 絶縁性セラミックスを主成分とする板状の基体と、
この基体の一方の表面近傍に埋設された平板状の電極と、
この基体の他方の表面から前記電極に向けて穿設された端子穴に挿入され、前記電極と
導通する端子とを備え、
前記基体を形成する絶縁性セラミックスと同等の熱膨張係数を有しており、前記端子穴
の底面と前記電極との間に埋設されて前記電極に接続される導電性セラミックス部材と、
前記導電性セラミックス部材と前記端子穴との間に埋設されて前記導電性セラミックス
部材に接続される金属板と、
前記金属板と前記端子穴の底面との間に埋設されて前記金属板に接続される金属導電部
材とを有し、
前記金属導電部材は、前記端子穴の底面において露出されており、
前記露出された前記金属導電部材の平面の長さが、前記端子穴の底面の直径よりも小さ
い
ことを特徴とする加熱装置。 - 前記導電性セラミックス部材が、炭素繊維を含む窒化アルミニウムよりなることを特徴
とする請求項3乃至4の何れか1項に記載の加熱装置。 - 前記導電性セラミックス部材が、電気伝導率が10Ω・cm以下であることを特徴とす
る請求項1乃至5の何れか1項に記載の加熱装置。 - 前記基体と前記導電性セラミックス部材とが、同種のセラミックスを主成分とすること
を特徴とする請求項1乃至6の何れか1項に記載の加熱装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006310521A JP4421595B2 (ja) | 2006-11-16 | 2006-11-16 | 加熱装置 |
US11/939,601 US8071913B2 (en) | 2006-11-16 | 2007-11-14 | Heating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006310521A JP4421595B2 (ja) | 2006-11-16 | 2006-11-16 | 加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008130609A JP2008130609A (ja) | 2008-06-05 |
JP4421595B2 true JP4421595B2 (ja) | 2010-02-24 |
Family
ID=39415891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006310521A Active JP4421595B2 (ja) | 2006-11-16 | 2006-11-16 | 加熱装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8071913B2 (ja) |
JP (1) | JP4421595B2 (ja) |
Cited By (1)
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US20210074568A1 (en) * | 2015-07-13 | 2021-03-11 | Sumitomo Electric Industries, Ltd. | Wafer holding body |
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TWI450353B (zh) * | 2008-01-08 | 2014-08-21 | Ngk Insulators Ltd | A bonding structure and a semiconductor manufacturing apparatus |
JP5143029B2 (ja) * | 2008-01-08 | 2013-02-13 | 日本碍子株式会社 | 接合構造及び半導体製造装置 |
JP5185025B2 (ja) * | 2008-08-29 | 2013-04-17 | 太平洋セメント株式会社 | セラミックス部材 |
JP2010177415A (ja) * | 2009-01-29 | 2010-08-12 | Kyocera Corp | 保持用治具およびこれを備えた吸着装置 |
JP5732798B2 (ja) * | 2010-09-29 | 2015-06-10 | 住友大阪セメント株式会社 | セラミック部材 |
KR101339981B1 (ko) * | 2011-11-29 | 2013-12-11 | (주)티티에스 | 기판 지지 모듈 |
JP5807032B2 (ja) * | 2012-03-21 | 2015-11-10 | 日本碍子株式会社 | 加熱装置及び半導体製造装置 |
KR101388600B1 (ko) * | 2012-06-04 | 2014-04-23 | 주식회사 케이에스엠컴포넌트 | 홈부가 형성된 전기 공급 부재를 포함하는 세라믹 히터 |
KR101488806B1 (ko) * | 2013-06-04 | 2015-02-04 | (주)티티에스 | 기판 지지 유닛 |
JP6096622B2 (ja) * | 2013-08-31 | 2017-03-15 | 京セラ株式会社 | セラミックヒータ |
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JP6532816B2 (ja) * | 2015-11-27 | 2019-06-19 | 日本特殊陶業株式会社 | 端子を備えた部材及びその製造方法 |
JP6577362B2 (ja) * | 2015-12-24 | 2019-09-18 | 京セラ株式会社 | ヒータ |
JP6837806B2 (ja) * | 2016-10-31 | 2021-03-03 | 信越化学工業株式会社 | 加熱素子 |
KR102298654B1 (ko) * | 2017-04-19 | 2021-09-07 | 주식회사 미코세라믹스 | 내구성이 개선된 세라믹 히터 |
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JP7284561B2 (ja) * | 2017-10-30 | 2023-05-31 | 日本特殊陶業株式会社 | 電極埋設部材 |
US10849221B2 (en) * | 2017-10-30 | 2020-11-24 | Ngk Spark Plug Co., Ltd. | Electrode embedded member |
JP7027219B2 (ja) * | 2018-03-28 | 2022-03-01 | 京セラ株式会社 | 試料保持具 |
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WO2019208191A1 (ja) * | 2018-04-27 | 2019-10-31 | 日本碍子株式会社 | ウエハ支持台 |
JP6586259B1 (ja) * | 2018-04-27 | 2019-10-02 | 日本碍子株式会社 | ウエハ支持台 |
US20210400800A1 (en) * | 2018-10-30 | 2021-12-23 | Kyocera Corporation | Board-like structure and heater system |
US11869796B2 (en) * | 2019-03-26 | 2024-01-09 | Niterra Co., Ltd. | Electrode-embedded member and method for manufacturing same, electrostatic chuck, and ceramic heater |
JP2020177735A (ja) * | 2019-04-15 | 2020-10-29 | 日本特殊陶業株式会社 | 電極埋設部材の製造方法 |
JP7265930B2 (ja) * | 2019-05-21 | 2023-04-27 | 日本特殊陶業株式会社 | 加熱装置および加熱装置の製造方法 |
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JP2021027180A (ja) * | 2019-08-06 | 2021-02-22 | 日本特殊陶業株式会社 | 保持装置 |
JP7356868B2 (ja) * | 2019-11-05 | 2023-10-05 | 日本特殊陶業株式会社 | 複合部材 |
KR20240032691A (ko) * | 2022-09-02 | 2024-03-12 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 배치대 |
WO2024047857A1 (ja) * | 2022-09-02 | 2024-03-07 | 日本碍子株式会社 | ウエハ載置台 |
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JP3813654B2 (ja) | 1995-02-09 | 2006-08-23 | 日本碍子株式会社 | セラミックスの接合構造およびその製造方法 |
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WO2001066488A1 (fr) * | 2000-03-07 | 2001-09-13 | Ibiden Co., Ltd. | Substrat ceramique pour fabrication/inspection de semi-conducteur |
JP3618640B2 (ja) | 2000-06-15 | 2005-02-09 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
JP4156788B2 (ja) | 2000-10-23 | 2008-09-24 | 日本碍子株式会社 | 半導体製造装置用サセプター |
JP2003077781A (ja) | 2001-08-31 | 2003-03-14 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
US6838646B2 (en) | 2002-08-22 | 2005-01-04 | Sumitomo Osaka Cement Co., Ltd. | Susceptor device |
JP4451098B2 (ja) | 2002-08-22 | 2010-04-14 | 住友大阪セメント株式会社 | サセプタ装置 |
JP4499431B2 (ja) | 2003-07-07 | 2010-07-07 | 日本碍子株式会社 | 窒化アルミニウム焼結体、静電チャック、導電性部材、半導体製造装置用部材及び窒化アルミニウム焼結体の製造方法 |
JP4482472B2 (ja) | 2005-03-24 | 2010-06-16 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
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2006
- 2006-11-16 JP JP2006310521A patent/JP4421595B2/ja active Active
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2007
- 2007-11-14 US US11/939,601 patent/US8071913B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20210074568A1 (en) * | 2015-07-13 | 2021-03-11 | Sumitomo Electric Industries, Ltd. | Wafer holding body |
Also Published As
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US20080116187A1 (en) | 2008-05-22 |
JP2008130609A (ja) | 2008-06-05 |
US8071913B2 (en) | 2011-12-06 |
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