JP2017110295A5 - - Google Patents

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JP2017110295A5
JP2017110295A5 JP2016234953A JP2016234953A JP2017110295A5 JP 2017110295 A5 JP2017110295 A5 JP 2017110295A5 JP 2016234953 A JP2016234953 A JP 2016234953A JP 2016234953 A JP2016234953 A JP 2016234953A JP 2017110295 A5 JP2017110295 A5 JP 2017110295A5
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JP
Japan
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present
penetrating
trench
fill
depth
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JP2016234953A
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Japanese (ja)
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JP6812768B2 (en
JP2017110295A (en
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Description

<充填>
本発明において、本発明の導電性ペーストで充填すべき部材(被充填物)としては、金属(合金、金属間化合物も含む。)のほか、セラミック、プラスチック、これらの複合材料等を例示できるが、本発明では特にセラミック(シリコンチップ含む)又はプラスチックが好ましい。ここで言う被充填物は、ビア又はトレンチのような微細空間を有するものであり、これを充填するために本発明の導電性ペーストを使用することができる。本発明においては、上述のようなナノ粒子を用いることから、半導体を貫通するビアホール(スルーサブストレートビア:TSV)を充填するような場合に採用されうる。
本発明では、特に金属ナノ粒子を使用する点から、ビアは直径0.5〜2.0μm、深さが0.5〜2.0μm、トレンチは幅0.5〜2.0μm、深さが0.5〜2.0μmのものが好ましい。ここで「ビア」は、基板に設けた貫通又は非貫通の穴のことを示す。
<Fill>
In the present invention, examples of the member (filling material) to be filled with the conductive paste of the present invention include metals (including alloys and intermetallic compounds), ceramics, plastics, and composite materials thereof. In the present invention, ceramic (including a silicon chip) or plastic is particularly preferable. The material to be filled here has a minute space such as a via or a trench, and the conductive paste of the present invention can be used to fill the space. In the present invention, since the above-described nanoparticles are used, the present invention can be employed when filling a via hole (through substrate via: TSV) penetrating a semiconductor.
In the present invention, from the viewpoint of using metal nanoparticles, the via has a diameter of 0.5 to 2.0 μm and a depth of 0.5 to 2.0 μm, and the trench has a width of 0.5 to 2.0 μm and a depth of 0.5 to 2.0 μm. It is preferably 0.5 to 2.0 μm. Here, the “via” indicates a penetrating or non-penetrating hole provided in the substrate.

JP2016234953A 2015-12-11 2016-12-02 Conductive paste Active JP6812768B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015242211 2015-12-11
JP2015242211 2015-12-11

Publications (3)

Publication Number Publication Date
JP2017110295A JP2017110295A (en) 2017-06-22
JP2017110295A5 true JP2017110295A5 (en) 2020-01-09
JP6812768B2 JP6812768B2 (en) 2021-01-13

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JP2016234953A Active JP6812768B2 (en) 2015-12-11 2016-12-02 Conductive paste

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JP (1) JP6812768B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6638863B2 (en) * 2017-12-18 2020-01-29 Dic株式会社 Copper fine particle sintered body
KR102181676B1 (en) * 2020-01-15 2020-11-24 조옥래 Copper-based material having embedded silver nano particles and method for producing the same
WO2024058254A1 (en) * 2022-09-16 2024-03-21 日亜化学工業株式会社 Ceramic sintered body substrate, light-emitting device, and methods for manufacturing these

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103328136B (en) * 2011-03-31 2014-12-03 Dic株式会社 Composite of organic compound and silver core/copper shell nanoparticles and method for producing same
JP2013171862A (en) * 2012-02-17 2013-09-02 Tokyo Electron Ltd Metal paste filling method, metal paste filling device, and via plug manufacturing method
SG11201502567TA (en) * 2012-10-29 2015-05-28 Alpha Metals Sintering powder
JP6372978B2 (en) * 2013-06-28 2018-08-15 古河電気工業株式会社 Conductive paste
WO2015098658A1 (en) * 2013-12-24 2015-07-02 Dic株式会社 Bonding material containing metal nanoparticles

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