JP2017028216A - 実装構造体及びその製造方法 - Google Patents

実装構造体及びその製造方法 Download PDF

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JP2017028216A
JP2017028216A JP2015148331A JP2015148331A JP2017028216A JP 2017028216 A JP2017028216 A JP 2017028216A JP 2015148331 A JP2015148331 A JP 2015148331A JP 2015148331 A JP2015148331 A JP 2015148331A JP 2017028216 A JP2017028216 A JP 2017028216A
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Prior art keywords
metal terminal
substrate
resin
convex portion
resin convex
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JP2015148331A
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JP6608640B2 (ja
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純廣 市川
Sumihiro Ichikawa
純廣 市川
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2015148331A priority Critical patent/JP6608640B2/ja
Priority to US15/202,700 priority patent/US9824993B2/en
Publication of JP2017028216A publication Critical patent/JP2017028216A/ja
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Abstract

【課題】真空チャンバ内にアライメント機構が備えられた装置を用いることなく金属端子同士を接続信頼性が高い状態で直接接合することが可能な実装構造体を提供する。
【解決手段】本実装構造体は、第１の金属端子及び第１の樹脂凸部が第１面に形成された第１の基板と、前記第１の金属端子と同種の金属からなる第２の金属端子、及び第２の樹脂凸部が第２面に形成された第２の基板と、を有し、前記第２の基板の前記第２面と前記第１の基板の前記第１面とが対向するように、前記第１の基板上に前記第２の基板を備え、前記第１の基板の第１面と前記第２の基板の第２面との間に充填された封止部を有し、前記第１の金属端子と前記第２の金属端子とは直接接合されており、前記第１の樹脂凸部と前記第２の樹脂凸部とは直接接合されており、前記第１の樹脂凸部及び前記第２の樹脂凸部は、フィラーを含有しない樹脂材料からなり、前記封止部は、フィラーを含有する樹脂材料からなる。
【選択図】図１

Description

本発明は、実装構造体及びその製造方法に関する。
銅端子を有する第１の基板と、銅端子を有する第２の基板とを積層し、銅端子同士を直接接合（所謂Ｃｕ−Ｃｕ接合）した実装構造体が知られている。
Ｃｕ−Ｃｕ接合を行う場合には、接合される銅端子の表面を活性化し減圧下で接合する方法（常温接合、SAB：Surface Activated Bonding）、バイト研削等で銅端子の表面を削り減圧下の還元雰囲気中で接合する方法、金属塩生成結合法等が用いられる。
ところで、Ｃｕ−Ｃｕ接合を行う前には、接合される銅端子のアライメントが必要となる。接合前に銅端子同士をアライメントする方法としては、例えば、真空チャンバ内にアライメント機構が備えられた装置を用いる第１の方法が知られている。
又、ハイブリッドボンディングと称される第２の方法が知られている。この方法では、第１の基板上に形成した銅端子の周囲を半硬化状態の樹脂で封止し、銅端子の先端側と樹脂の表面とを研削又は研磨して両者の高さを揃える。同様に、第２の基板上に形成した銅端子の周囲を半硬化状態の樹脂で封止し、銅端子の先端側と樹脂の表面とを研削又は研磨して両者の高さを揃える。そして、銅端子の先端側同士を対向させて、第１の基板上に第２の基板を配置し、半硬化状態の樹脂の表面同士を接触させて第１の基板と第２の基板とを仮固定する。その後、熱圧着により、銅端子同士を直接接合（Ｃｕ−Ｃｕ接合）すると共に半硬化状態の樹脂を完全に硬化させる。
特開２０１５−００８２２８号公報
しかしながら、上記の第１の方法では、真空チャンバ内にアライメント機構が備えられた装置が高価となることに加え、アライメント機構の腐食が懸念される。
又、上記の第２の方法では、仮固定時や直接接合時に、銅端子と銅端子との間に樹脂の噛み込みが発生し、銅端子同士の接続信頼性を低下させることが懸念される。
本発明は、上記に鑑みてなされたもので、真空チャンバ内にアライメント機構が備えられた装置を用いることなく金属端子同士を接続信頼性が高い状態で直接接合することが可能な実装構造体を提供することを課題とする。
本実装構造体は、第１の金属端子及び第１の樹脂凸部が第１面に形成された第１の基板と、前記第１の金属端子と同種の金属からなる第２の金属端子、及び第２の樹脂凸部が第２面に形成された第２の基板と、を有し、前記第２の基板の前記第２面と前記第１の基板の前記第１面とが対向するように、前記第１の基板上に前記第２の基板を備え、前記第１の基板の第１面と前記第２の基板の第２面との間に充填された封止部を有し、前記第１の金属端子と前記第２の金属端子とは直接接合されており、前記第１の樹脂凸部と前記第２の樹脂凸部とは直接接合されており、前記第１の樹脂凸部及び前記第２の樹脂凸部は、フィラーを含有しない樹脂材料からなり、前記封止部は、フィラーを含有する樹脂材料からなることを要件とする。
開示の技術によれば、真空チャンバ内にアライメント機構が備えられた装置を用いることなく金属端子同士を接続信頼性が高い状態で直接接合することが可能な実装構造体を提供できる。
本実施の形態に係る実装構造体を例示する図である。 本実施の形態に係る実装構造体の製造工程を例示する図（その１）である。 本実施の形態に係る実装構造体の製造工程を例示する図（その２）である。
以下、図面を参照して発明を実施するための形態について説明する。なお、各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。
［本実施の形態に係る実装構造体の構造］
まず、本実施の形態に係る実装構造体の構造について説明する。図１は、本実施の形態に係る実装構造体を例示する図であり、図１（ｂ）は平面図、図１（ａ）は図１（ｂ）のＡ−Ａ線に沿う断面図である。
図１を参照するに、実装構造体１は、第１の基板１０と、第２の基板２０と、封止部４０とを有する。実装構造体１において、第２の基板２０の他方の面２０ｂ（第２面）が第１の基板１０の一方の面１０ａ（第１面）と対向するように、第２の基板２０が第１の基板１０上に積層されている。
なお、本実施の形態では、便宜上、実装構造体１の第２の基板２０側を上側又は一方の側、第１の基板１０側を下側又は他方の側とする。又、各部位の第２の基板２０側の面を一方の面又は上面、第１の基板１０側の面を他方の面又は下面とする。但し、実装構造体１は天地逆の状態で用いることができ、又は任意の角度で配置することができる。又、平面視とは対象物を第１の基板１０の一方の面１０ａの法線方向から視ることを指し、平面形状とは対象物を第１の基板１０の一方の面１０ａの法線方向から視た形状を指すものとする。
第１の基板１０は、例えば、ガラスクロスにエポキシ系樹脂等の絶縁性樹脂を含浸させた所謂ガラスエポキシ基板等である。第１の基板１０として、ガラス繊維、炭素繊維、アラミド繊維等の織布や不織布にエポキシ系樹脂等の絶縁性樹脂を含浸させた樹脂基板を用いてもよい。又、第１の基板１０として、シリコン基板を用いてもよいし、セラミック基板を用いてもよい。又、第１の基板１０がシリコン基板である場合に、内部に半導体集積回路が形成されていてもよい。第１の基板１０の厚さは、例えば、数１０μｍ〜数ｍｍ程度とすることができる。
第２の基板２０の材料や厚さは、例えば、第１の基板１０と同様とすることができる。但し、第１の基板１０と第２の基板２０とは同種であってもよいし、異種であってもよい。例えば、第１の基板１０及び第２の基板２０が共に樹脂基板であってもよいし、第１の基板１０が樹脂基板であって第２の基板２０がシリコン基板であってもよい。
つまり、実装構造体１は、第１の基板１０及び第２の基板２０の何れもが半導体集積回路を有しない配線基板同士の積層体であってもよい。又、第１の基板１０及び第２の基板２０の一方が半導体集積回路を有する半導体チップ又は半導体ウェハ、他方が半導体集積回路を有しない配線基板との積層体であってもよい。又、第１の基板１０及び第２の基板２０の何れもが半導体集積回路を有する半導体チップと半導体チップ、半導体チップと半導体ウェハ、又は半導体ウェハと半導体ウェハとの積層体であってもよい。又、第１の基板１０及び第２の基板２０の何れか一方が単数で、他方が複数であってもよい。
第１の基板１０の一方の面１０ａには、第１の金属端子１１が形成されている。又、第２の基板２０の他方の面２０ｂには、第２の金属端子２１が形成されている。第１の金属端子１１及び第２の金属端子２１は、例えば、第１の基板１０及び第２の基板２０にエリアアレイ状（格子状）に配置され、各第１の金属端子１１と各第２の金属端子２１とは互いに対向している。互いに対向している第１の金属端子１１と第２の金属端子２１とは同種の金属からなり、直接接合されている。
第１の金属端子１１と第２の金属端子２１の材料としては、例えば、銅（Ｃｕ）を用いることができる。この場合、第１の金属端子１１と第２の金属端子２１との接合は、所謂Ｃｕ−Ｃｕ接合となる。但し、第１の金属端子１１と第２の金属端子２１の材料は、直接接合が可能な同種の金属であれば、銅（Ｃｕ）以外であってもよい。銅（Ｃｕ）以外の材料としては、例えば、ニッケル（Ｎｉ）、銀（Ａｇ）、インジウム（Ｉｎ）、錫（Ｓｎ）等を挙げることができる。
第１の金属端子１１及び第２の金属端子２１は、例えば円柱状であり、高さは例えば５μｍ〜５００μｍ程度とすることができる。第１の金属端子１１及び第２の金属端子２１が円柱状である場合、円柱の端面の直径は例えば５μｍ〜数１００μｍ程度とすることができる。第１の金属端子１１及び第２の金属端子２１のピッチは、例えば、２０μｍ〜数１００μｍ程度とすることができる。
第１の基板１０の一方の面１０ａにおいて、第１の金属端子１１が配置される領域よりも外周側の領域には、第１の樹脂凸部３１が形成されている。又、第２の基板２０の他方の面２０ｂにおいて、第２の金属端子２１が配置される領域よりも外周側の領域には、第２の樹脂凸部３２が形成されている。第１の樹脂凸部３１と第２の樹脂凸部３２とは互いに対向しており、両者は直接接合されている。
第１の樹脂凸部３１及び第２の樹脂凸部３２の材料としては、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂を用いることができる。第１の樹脂凸部３１及び第２の樹脂凸部３２は、フィラーを含有していない。図１では、第１の基板１０及び第２の基板２０が夫々矩形であり、第１の基板１０及び第２の基板２０の四隅に第１の樹脂凸部３１及び第２の樹脂凸部３２が配置されている。但し、第１の樹脂凸部３１及び第２の樹脂凸部３２は、最低２つずつあればよく、３つや５つ以上あってもよい。又、第１の樹脂凸部３１及び第２の樹脂凸部３２は、細長状に形成してもよい。
なお、第１の基板１０及び第２の基板２０が矩形である場合、第１の樹脂凸部３１及び第２の樹脂凸部３２の全部又は一部は、矩形の対角線上に配置されていることが好ましい。後述のように、第１の樹脂凸部３１及び第２の樹脂凸部３２は仮固定に用いる端子であり、バランス良く配置することが必要だからである。
封止部４０は、第１の基板１０の一方の面１０ａと第２の基板２０の他方の面２０ｂとの間に、第１の金属端子１１及び第２の金属端子２１を被覆するように充填されている。封止部４０は所謂アンダーフィル樹脂であり、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂から構成することができる。封止部４０は、シリカ（ＳｉＯ２）等のフィラーを含有している。封止部４０がフィラーを含有することにより、実装構造体１全体の強度を向上することができる。
［本実施の形態に係る実装構造体の製造方法］
次に、本実施の形態に係る実装構造体の製造方法について説明する。図２及び図３は、本実施の形態に係る実装構造体の製造工程を例示する図である。なお、図２及び図３は、図１（ａ）に対応する断面を示している。
まず、図２（ａ）に示す工程では、樹脂基板やシリコン基板等の第１の基板１０を準備し、第１の基板１０の一方の面１０ａに第１の金属端子１１を形成する。第１の金属端子１１の材料としては、例えば、銅（Ｃｕ）を用いることができる。第１の金属端子１１は、例えば、セミアディティブ法により形成することができる。なお、この工程では、第１の金属端子１１の高さがばらついている場合がある。
次に、第１の基板１０の一方の面１０ａの第１の金属端子１１が配置された領域よりも外周側の領域に、Ｂ−ステージ状態（半硬化状態）の複数個の第１の樹脂凸部３１を形成する。第１の樹脂凸部３１は、例えば、図１（ｂ）に示した４箇所の位置に配置することができる。第１の樹脂凸部３１の材料としては、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂から構成することができる。第１の樹脂凸部３１は、フィラーを含有していない。第１の樹脂凸部３１は、例えば、Ｂ−ステージ状態（半硬化状態）の樹脂フィルムをラミネートすることで形成できる。或いは、液状又はペースト状の樹脂を印刷法等により塗布し、その後プリベークしてＢ−ステージ状態としてもよい。
次に、図２（ｂ）に示す工程では、例えばバイト研削により第１の金属端子１１及び第１の樹脂凸部３１の先端側を削って高さを揃えると共に、第１の金属端子１１の上端面を平坦化及び活性化する。この際、第１の樹脂凸部３１は、バイトの刃欠けを生じさせる要因となるフィラーを含有していないため、第１の金属端子１１と共に容易にバイト研削することができる。
次に、図２（ｃ）に示す工程では、まず、図２（ａ）と同様の工程により、第２の基板２０の他方の面２０ｂに第２の金属端子２１及び第２の樹脂凸部３２を形成する。第２の金属端子２１の材料としては、第１の金属端子１１と同種の金属を用いる。例えば、第１の金属端子１１が銅（Ｃｕ）であれば、第２の金属端子２１も銅（Ｃｕ）で形成する。又、第２の樹脂凸部３２の材料としては、例えば、第１の樹脂凸部３１と同種の、フィラーを含有していない樹脂を用いることができる。
そして、図２（ｂ）と同様の工程により、例えばバイト研削により第２の金属端子２１及び第２の樹脂凸部３２の先端側を削って高さを揃えると共に、第２の金属端子２１の下端面を平坦化及び活性化する。この際、第２の樹脂凸部３２は、バイトの刃欠けを生じさせる要因となるフィラーを含有していないため、第２の金属端子２１と共に容易にバイト研削することができる。その後、第１の金属端子１１の上端面と第２の金属端子２１の下端面とが対向し、第１の樹脂凸部３１の上端面と第２の樹脂凸部３２の下端面とが対向するように、第１の基板１０上に第２の基板２０を位置決めする。
次に、図３（ａ）に示す工程では、第１の樹脂凸部３１の上端面と第２の樹脂凸部３２の下端面とが接するように、第１の基板１０上に第２の基板２０を積層する。第１の樹脂凸部３１及び第２の樹脂凸部３２はＢ−ステージ状態であるため、第１の基板１０上に第２の基板２０が仮固定される。仮固定の際に、第１の樹脂凸部３１及び第２の樹脂凸部３２が硬化しない程度に加熱（例えば、１００℃以下程度の温度）してもよい。なお、この時点では、第１の金属端子１１の上端面と第２の金属端子２１の下端面との間には、僅かな隙間が形成されている場合がある。又、第１の金属端子１１の上端面と第２の金属端子２１の下端面には、酸化膜が形成されている場合がある。
次に、図３（ｂ）に示す工程では、蟻酸雰囲気や水素ラジカル雰囲気等の還元雰囲気中で、第１の樹脂凸部３１及び第２の樹脂凸部３２を、夫々を構成する樹脂の硬化温度以上（例えば、１５０〜３００℃程度）に加熱しながら、第２の基板２０を第１の基板１０側に押圧する。
これにより、蟻酸等の還元物質により、第１の金属端子１１の上端面及び第２の金属端子２１の下端面に形成された酸化膜が除去され、第１の金属端子１１の上端面と第２の金属端子２１の下端面とが熱圧着により直接接合される。第１の金属端子１１及び第２の金属端子２１の材料が銅（Ｃｕ）であれば、両者は所謂Ｃｕ−Ｃｕ接合される。なお、蟻酸等の還元物質は、第１の金属端子１１の上端面と第２の金属端子２１の下端面との間に少しでも隙間があれば、そこから浸み込んで酸化膜を除去する。その後、第１の樹脂凸部３１及び第２の樹脂凸部３２が硬化して直接接合される。
なお、第１の樹脂凸部３１及び第２の樹脂凸部３２の硬化に要する時間は、第１の金属端子１１の上端面と第２の金属端子２１の下端面との直接接合に要する時間よりも十分に長い。そのため、第１の金属端子１１と第２の金属端子２１との直接接合が先に完了し、その後、第１の樹脂凸部３１及び第２の樹脂凸部３２の硬化が開始され、更に時間が経過すると第１の樹脂凸部３１及び第２の樹脂凸部３２が完全に硬化する。
但し、上記は一例であり、第１の樹脂凸部３１及び第２の樹脂凸部３２の硬化時間は、第１の樹脂凸部３１及び第２の樹脂凸部３２を構成する樹脂の硬化温度に依存する。例えば、硬化温度が低い樹脂であれば、第１の金属端子１１と第２の金属端子２１との直接接合よりも早く、若しくは同時に硬化が始まる場合もある。
次に、図３（ｃ）に示す工程では、第１の基板１０の一方の面１０ａと第２の基板２０の他方の面２０ｂとの間に、熱硬化性のエポキシ系樹脂等の絶縁性樹脂を充填して硬化させ封止部４０を形成する。これにより、実装構造体１が完成する。なお、封止部４０は、シリカ（ＳｉＯ２）等のフィラーを含有している。
このように、本実施の形態では、第１の金属端子１１及び第２の金属端子２１が設けられていない領域に第１の樹脂凸部３１及び第２の樹脂凸部３２を配置する。そして、第１の樹脂凸部３１と第２の樹脂凸部３２とを仮固定して、第１の金属端子１１及びそれに対向する第２の金属端子２１とを位置合わせする。ここで、第１の金属端子１１及び第２の金属端子２１が設けられている領域には樹脂が存在しないため、位置合わせの際に第１の金属端子１１と第２の金属端子２１との間に樹脂が噛み込むことがない。その結果、第１の金属端子１１と第２の金属端子２１とを信頼性の高い状態で直接接合することが可能となる。
又、第１の樹脂凸部３１と第２の樹脂凸部３２とを仮固定することで第１の金属端子１１及びそれに対向する第２の金属端子２１とを位置合わせ（アライメント）するため、アライメント機構を有する高価な装置を用いる必要がない。なお、蟻酸雰囲気や水素ラジカル雰囲気等の還元雰囲気中で低温はんだの加熱等を行う装置は、アライメント機構を有するものではないため、安価である。
又、第１の樹脂凸部３１の材料としてフィラーを含有しない樹脂材料を用いるため、バイトの刃欠けを生じさせることなく、第１の金属端子１１と共に容易にバイト研削することができる。そのため、第１の樹脂凸部３１と第１の金属端子１１との高さを容易に揃えることができる。第２の樹脂凸部３２及び第２の金属端子２１についても同様である。
又、第１の金属端子１１と第２の金属端子２１とを直接接合する工程の前に、第１の樹脂凸部３１と第２の樹脂凸部３２とを仮固定する工程を有している。これにより、例えば、半導体ウェハ上に個片化された多数の半導体チップを接合する場合等でも、半導体ウェハと個片化された各半導体チップとを適切な位置で仮固定することで、両者が位置ずれすることなく接合工程に移行することが可能となる。
以上、好ましい実施の形態等について詳説したが、上述した実施の形態等に制限されることはなく、特許請求の範囲に記載された範囲を逸脱することなく、上述した実施の形態等に種々の変形及び置換を加えることができる。
１０ 第１の基板
１０ａ 第１の基板の一方の面
１１ 第１の金属端子
２０ 第２の基板
２０ｂ 第２の基板の他方の面
２１ 第２の金属端子
３１ 第１の樹脂凸部
３２ 第２の樹脂凸部
４０ 封止部

Claims (7)

  1. 第１の金属端子及び第１の樹脂凸部が第１面に形成された第１の基板と、
    前記第１の金属端子と同種の金属からなる第２の金属端子、及び第２の樹脂凸部が第２面に形成された第２の基板と、を有し、
    前記第２の基板の前記第２面と前記第１の基板の前記第１面とが対向するように、前記第１の基板上に前記第２の基板を備え、
    前記第１の基板の第１面と前記第２の基板の第２面との間に充填された封止部を有し、
    前記第１の金属端子と前記第２の金属端子とは直接接合されており、
    前記第１の樹脂凸部と前記第２の樹脂凸部とは直接接合されており、
    前記第１の樹脂凸部及び前記第２の樹脂凸部は、フィラーを含有しない樹脂材料からなり、
    前記封止部は、フィラーを含有する樹脂材料からなる実装構造体。
  2. 前記第１の樹脂凸部と前記第２の樹脂凸部は、前記第１の金属端子及び前記第２の金属端子が配置される領域よりも外周側の領域に夫々複数個配置されている請求項１に記載の実装構造体。
  3. 前記第１の基板及び前記第２の基板は、夫々矩形であり、
    前記第１の樹脂凸部及び前記第２の樹脂凸部の全部又は一部は、前記矩形の対角線上に配置されている請求項２に記載の実装構造体。
  4. 第１の金属端子及び半硬化状態の第１の樹脂凸部が第１面に形成された第１の基板を作製する工程と、
    前記第１の金属端子と同種の金属からなる第２の金属端子、及び半硬化状態の第２の樹脂凸部が第２面に形成された第２の基板を作製する工程と、
    前記第１の金属端子の端面と前記第２の金属端子の端面とが対向し、前記第１の樹脂凸部の端面と前記第２の樹脂凸部の端面とが対向するように、前記第１の基板上に前記第２の基板を積層し、前記第１の樹脂凸部の端面と前記第２の樹脂凸部の端面とを仮固定する工程と、
    前記第１の樹脂凸部及び前記第２の樹脂凸部の夫々を構成する樹脂の硬化温度以上に加熱すると共に、前記第１の金属端子の端面と第２の金属端子の端面の酸化膜を除去し、前記第２の基板を前記第１の基板側に押圧し、前記第１の金属端子の端面と前記第２の金属端子の端面とを直接接合する工程と、
    前記第１の金属端子の端面と前記第２の金属端子の端面とを直接接合すると共に、前記第１の樹脂凸部と前記第２の樹脂凸部とを硬化させて直接接合する工程と、を有する実装構造体の製造方法。
  5. 前記直接接合する工程は、還元雰囲気中で行われる請求項４に記載の実装構造体の製造方法。
  6. 前記仮固定する工程よりも前に、前記第１の金属端子の端面及び前記第２の金属端子の端面を研削して活性化する工程を有する請求項４又は５に記載の実装構造体の製造方法。
  7. 前記活性化する工程では、前記第１の金属端子の端面及び前記第１の樹脂凸部の端面を研削して前記第１の金属端子と前記第１の樹脂凸部の高さを揃え、前記第２の金属端子の端面及び前記第２の樹脂凸部の端面を研削して前記第２の金属端子と前記第２の樹脂凸部の高さを揃える請求項６に記載の実装構造体の製造方法。
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