JP2016540360A5 - 基板処理システム及び基板処理方法 - Google Patents
基板処理システム及び基板処理方法 Download PDFInfo
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- JP2016540360A5 JP2016540360A5 JP2016540404A JP2016540404A JP2016540360A5 JP 2016540360 A5 JP2016540360 A5 JP 2016540360A5 JP 2016540404 A JP2016540404 A JP 2016540404A JP 2016540404 A JP2016540404 A JP 2016540404A JP 2016540360 A5 JP2016540360 A5 JP 2016540360A5
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- substrate processing
- processing system
- processing method
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- 239000000758 substrate Substances 0.000 title description 4
- 238000003672 processing method Methods 0.000 title description 2
Description
本発明はシステム及び方法に関し、特に、基板処理システム及び基板処理方法に関する。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/020,793 | 2013-09-07 | ||
US14/020,793 US9190248B2 (en) | 2013-09-07 | 2013-09-07 | Dynamic electrode plasma system |
PCT/US2014/054207 WO2015035116A1 (en) | 2013-09-07 | 2014-09-05 | Dynamic electrode plasma system |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016540360A JP2016540360A (ja) | 2016-12-22 |
JP2016540360A5 true JP2016540360A5 (ja) | 2017-10-12 |
JP6465892B2 JP6465892B2 (ja) | 2019-02-06 |
Family
ID=52624497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016540404A Active JP6465892B2 (ja) | 2013-09-07 | 2014-09-05 | 基板処理システム及び基板処理方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9190248B2 (ja) |
JP (1) | JP6465892B2 (ja) |
KR (1) | KR102212621B1 (ja) |
CN (1) | CN105580113B (ja) |
TW (1) | TWI650791B (ja) |
WO (1) | WO2015035116A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9997351B2 (en) * | 2015-12-08 | 2018-06-12 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for filling a cavity using angled ion beam |
JP6584355B2 (ja) * | 2016-03-29 | 2019-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR102673632B1 (ko) | 2016-12-06 | 2024-06-13 | 삼성전자주식회사 | 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법 |
KR102374697B1 (ko) * | 2017-09-07 | 2022-03-15 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
US20190393053A1 (en) * | 2018-06-20 | 2019-12-26 | Applied Materials, Inc. | Etching apparatus |
US11043394B1 (en) | 2019-12-18 | 2021-06-22 | Applied Materials, Inc. | Techniques and apparatus for selective shaping of mask features using angled beams |
CN112663028B (zh) * | 2020-02-10 | 2023-04-14 | 拉普拉斯新能源科技股份有限公司 | 一种pecvd镀膜机 |
US11270864B2 (en) * | 2020-03-24 | 2022-03-08 | Applied Materials, Inc. | Apparatus and system including extraction optics having movable blockers |
WO2022040334A1 (en) | 2020-08-18 | 2022-02-24 | Enviro Metals, LLC | Metal refinement |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068244A (ja) * | 2001-08-28 | 2003-03-07 | Applied Materials Japan Inc | イオン注入装置の引出電極系およびイオン注入装置 |
JP4039834B2 (ja) * | 2001-09-28 | 2008-01-30 | 株式会社荏原製作所 | エッチング方法及びエッチング装置 |
US6716727B2 (en) | 2001-10-26 | 2004-04-06 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for plasma doping and ion implantation in an integrated processing system |
US6777695B2 (en) * | 2002-07-12 | 2004-08-17 | Varian Semiconductors Equipment Associates, Inc. | Rotating beam ion implanter |
GB2393571B (en) * | 2002-09-26 | 2007-03-21 | Leo Electron Microscopy Ltd | Improvements in and relating to the control of instruments |
JP4969781B2 (ja) * | 2005-01-14 | 2012-07-04 | 株式会社アルバック | プラズマドーピング装置 |
US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
US7498590B2 (en) * | 2006-06-23 | 2009-03-03 | Varian Semiconductor Equipment Associates, Inc. | Scan pattern for an ion implanter |
KR20080063988A (ko) * | 2007-01-03 | 2008-07-08 | 삼성전자주식회사 | 중성빔을 이용한 식각장치 |
US20120104274A1 (en) * | 2009-07-16 | 2012-05-03 | Canon Anelva Corporation | Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device |
US9177756B2 (en) | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US8946061B2 (en) * | 2011-08-30 | 2015-02-03 | Varian Semiconductor Equiptment Associates, Inc. | Engineering of porous coatings formed by ion-assisted direct deposition |
US20130287963A1 (en) * | 2012-04-26 | 2013-10-31 | Varian Semiconductor Equipment Associates, Inc. | Plasma Potential Modulated ION Implantation Apparatus |
-
2013
- 2013-09-07 US US14/020,793 patent/US9190248B2/en active Active
-
2014
- 2014-09-05 WO PCT/US2014/054207 patent/WO2015035116A1/en active Application Filing
- 2014-09-05 TW TW103130678A patent/TWI650791B/zh active
- 2014-09-05 JP JP2016540404A patent/JP6465892B2/ja active Active
- 2014-09-05 CN CN201480053404.5A patent/CN105580113B/zh active Active
- 2014-09-05 KR KR1020167008752A patent/KR102212621B1/ko active IP Right Grant
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