JP2016540360A5 - 基板処理システム及び基板処理方法 - Google Patents

基板処理システム及び基板処理方法 Download PDF

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JP2016540360A5
JP2016540360A5 JP2016540404A JP2016540404A JP2016540360A5 JP 2016540360 A5 JP2016540360 A5 JP 2016540360A5 JP 2016540404 A JP2016540404 A JP 2016540404A JP 2016540404 A JP2016540404 A JP 2016540404A JP 2016540360 A5 JP2016540360 A5 JP 2016540360A5
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substrate processing
processing system
processing method
substrate
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JP6465892B2 (ja
JP2016540360A (ja
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本発明はシステム及び方法に関し、特に、基板処理システム及び基板処理方法に関する。
JP2016540404A 2013-09-07 2014-09-05 基板処理システム及び基板処理方法 Active JP6465892B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/020,793 2013-09-07
US14/020,793 US9190248B2 (en) 2013-09-07 2013-09-07 Dynamic electrode plasma system
PCT/US2014/054207 WO2015035116A1 (en) 2013-09-07 2014-09-05 Dynamic electrode plasma system

Publications (3)

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JP2016540360A JP2016540360A (ja) 2016-12-22
JP2016540360A5 true JP2016540360A5 (ja) 2017-10-12
JP6465892B2 JP6465892B2 (ja) 2019-02-06

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JP2016540404A Active JP6465892B2 (ja) 2013-09-07 2014-09-05 基板処理システム及び基板処理方法

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US (1) US9190248B2 (ja)
JP (1) JP6465892B2 (ja)
KR (1) KR102212621B1 (ja)
CN (1) CN105580113B (ja)
TW (1) TWI650791B (ja)
WO (1) WO2015035116A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9997351B2 (en) * 2015-12-08 2018-06-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for filling a cavity using angled ion beam
JP6584355B2 (ja) * 2016-03-29 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102673632B1 (ko) 2016-12-06 2024-06-13 삼성전자주식회사 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법
KR102374697B1 (ko) * 2017-09-07 2022-03-15 삼성전자주식회사 반도체 소자의 제조방법
US20190393053A1 (en) * 2018-06-20 2019-12-26 Applied Materials, Inc. Etching apparatus
US11043394B1 (en) 2019-12-18 2021-06-22 Applied Materials, Inc. Techniques and apparatus for selective shaping of mask features using angled beams
CN112663028B (zh) * 2020-02-10 2023-04-14 拉普拉斯新能源科技股份有限公司 一种pecvd镀膜机
US11270864B2 (en) * 2020-03-24 2022-03-08 Applied Materials, Inc. Apparatus and system including extraction optics having movable blockers
WO2022040334A1 (en) 2020-08-18 2022-02-24 Enviro Metals, LLC Metal refinement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068244A (ja) * 2001-08-28 2003-03-07 Applied Materials Japan Inc イオン注入装置の引出電極系およびイオン注入装置
JP4039834B2 (ja) * 2001-09-28 2008-01-30 株式会社荏原製作所 エッチング方法及びエッチング装置
US6716727B2 (en) 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US6777695B2 (en) * 2002-07-12 2004-08-17 Varian Semiconductors Equipment Associates, Inc. Rotating beam ion implanter
GB2393571B (en) * 2002-09-26 2007-03-21 Leo Electron Microscopy Ltd Improvements in and relating to the control of instruments
JP4969781B2 (ja) * 2005-01-14 2012-07-04 株式会社アルバック プラズマドーピング装置
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US7498590B2 (en) * 2006-06-23 2009-03-03 Varian Semiconductor Equipment Associates, Inc. Scan pattern for an ion implanter
KR20080063988A (ko) * 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US20120104274A1 (en) * 2009-07-16 2012-05-03 Canon Anelva Corporation Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device
US9177756B2 (en) 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8946061B2 (en) * 2011-08-30 2015-02-03 Varian Semiconductor Equiptment Associates, Inc. Engineering of porous coatings formed by ion-assisted direct deposition
US20130287963A1 (en) * 2012-04-26 2013-10-31 Varian Semiconductor Equipment Associates, Inc. Plasma Potential Modulated ION Implantation Apparatus

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