JP2016531425A - オプトエレクトロニクス半導体チップ、半導体部品、および、オプトエレクトロニクス半導体チップの製造方法 - Google Patents
オプトエレクトロニクス半導体チップ、半導体部品、および、オプトエレクトロニクス半導体チップの製造方法 Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Dicing (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Laser Beam Processing (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (16)
- キャリア(5)と、放射を発生させかつ/または受け取るために設けられた活性領域(20)を有する半導体ボディ(2)とを有する、オプトエレクトロニクス半導体チップ(1)であって、
− 前記半導体ボディは、接続層(6)によって前記キャリア上に固定され;
− 前記キャリアは、前記半導体ボディに対向する第1の主面(53)と、前記半導体ボディとは反対側の第2の主面(54)との間に垂直方向に延在し、側面(51)が前記第1の主面と前記第2の主面とを互いに接続し;
− 前記キャリアの前記側面の第1の領域(511)が切欠き部(55)を有し;
− 前記側面の第2の領域が前記切欠き部と前記第2の主面との間に垂直方向に延在し;
− 前記半導体チップは、前記半導体ボディと前記第1の領域とを、それぞれ、少なくとも部分的に被覆している絶縁層(4)を有し;
− 前記第2の領域には、前記絶縁層が存在しない、オプトエレクトロニクス半導体チップ(1)。 - 前記キャリアは、導電性である、請求項1に記載の半導体チップ。
- 前記絶縁層は、前記接続層の前記半導体ボディを横方向に越えて延出する部分を完全に被覆している、請求項1または2に記載の半導体チップ。
- 前記切欠き部の垂直方向の広がりは、前記キャリアの垂直方向の広がりの10%〜70%(両端値を含む)である、請求項1〜3のいずれか一項に記載の半導体チップ。
- 請求項1〜4のいずれか一項に記載の半導体チップ(1)、および、成形体(7)を有する半導体部品であって、
− 前記成形体は、前記半導体チップ上に成形され、前記キャリアの前記側面の前記第1の領域と前記第2の領域とを、それぞれ、少なくとも一部の領域において被覆し;
− 前記半導体部品は、前記半導体チップ(1)の前記キャリアの前記第2の主面とは反対側の前面(11)から、前記キャリアの前記第1の領域を介して前記成形体の前面(71)まで引かれている接触トラック(8)を有する、半導体部品。 - 複数の半導体チップの製造方法であって、
a) 放射を発生させかつ/または受け取るために設けられた活性領域(20)を有する半導体積層体(200)であって複数の半導体ボディ(2)に区画されている半導体積層体(200)と、前記半導体積層体が配置されているキャリア複合体(50)とを有する複合体(9)を設けるステップと;
b) 隣接する半導体ボディ間に少なくとも一部の領域において延在し、かつ、前記キャリア複合体内まで延在するトレンチ型くぼみ部(56)を形成するステップと;
c) 前記半導体積層体と前記トレンチ型くぼみ部の側面(560)とを、それぞれ、少なくとも一部の領域において被覆する絶縁層(4)を形成するステップと;
d) 前記複合体を前記複数の半導体チップに個片化するステップであって、前記個片化するステップは、前記トレンチ型くぼみ部に沿って少なくとも一部の領域において延在する個片化切込み部(3)によって行われるステップと、を含む、複数の半導体チップの製造方法。 - 前記キャリア複合体の前記半導体積層体に対向する前面(501)には、ステップd)において、前記トレンチ型くぼみ部の領域内に金属材料が存在しない、請求項6に記載の方法。
- 前記キャリア複合体の前記半導体積層体とは反対側の後面(502)には、ステップd)において、金属材料が存在しない、請求項6または7に記載の方法。
- 前記キャリア複合体は、ステップb)後に薄膜化される、請求項6〜8のいずれか一項に記載の方法。
- ステップd)において前記トレンチ型くぼみ部に沿って延在する前記個片化切込み部の幅は、前記トレンチ型くぼみ部の幅よりも小さい、請求項6〜9のいずれか一項に記載の方法。
- 電気的接触面(81)が前記半導体ボディそれぞれの上に形成され、隣接する半導体ボディ間の前記トレンチ型くぼみ部に沿って延在する前記個片化切込み部は、それぞれ、前記個片化切込み部の中心線(31)が、関連する前記トレンチ型くぼみ部の中心線(561)よりも、前記隣接する半導体ボディの最も近い接触面から離隔するように形成される、請求項6〜10のいずれか一項に記載の方法。
- 前記キャリア複合体は、ステップd)において、前記トレンチ型くぼみ部とは反対側の面から個片化される、請求項6〜11のいずれか一項に記載の方法。
- 前記個片化切込み部の前記トレンチ型くぼみ部に対する位置決めは、前記キャリア複合体を通した前記トレンチ型くぼみ部の光学認識によって行われる、請求項12に記載の方法。
- レーザ放射による垂直方向における完全なまたは局所のみの材料改質が、ステップd)において、前記キャリア複合体内に行われる、請求項6〜13のいずれか一項に記載の方法。
- 化学的な材料除去が、ステップd)において、前記キャリア複合体内に行われる、請求項6〜13のいずれか一項に記載の方法。
- 前記トレンチ型くぼみ部は、ステップb)において、コヒーレント放射によって、化学的に、および/または、機械的に形成される、請求項6〜15のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013107971.7A DE102013107971A1 (de) | 2013-07-25 | 2013-07-25 | Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
DE102013107971.7 | 2013-07-25 | ||
PCT/EP2014/065445 WO2015011028A1 (de) | 2013-07-25 | 2014-07-17 | Optoelektronischer halbleiterchip, halbleiterbauelement und verfahren zur herstellung von optoelektronischen halbleiterchips |
Publications (2)
Publication Number | Publication Date |
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JP2016531425A true JP2016531425A (ja) | 2016-10-06 |
JP6277270B2 JP6277270B2 (ja) | 2018-02-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016528450A Expired - Fee Related JP6277270B2 (ja) | 2013-07-25 | 2014-07-17 | オプトエレクトロニクス半導体チップ、半導体部品、および、オプトエレクトロニクス半導体チップの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160163939A1 (ja) |
JP (1) | JP6277270B2 (ja) |
CN (1) | CN105580145B (ja) |
DE (1) | DE102013107971A1 (ja) |
WO (1) | WO2015011028A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102014116141B4 (de) | 2014-11-05 | 2022-07-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement |
DE102017119344A1 (de) * | 2017-08-24 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils |
DE102019212944A1 (de) * | 2019-08-28 | 2021-03-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement, vorrichtung mit einem halbleiterbauelement und verfahren zur herstellung von halbleiterbauelementen |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283757A (ja) * | 1993-03-25 | 1994-10-07 | Kyocera Corp | Ledアレイの製造方法 |
JPH0832110A (ja) * | 1994-07-19 | 1996-02-02 | Oki Electric Ind Co Ltd | 端面発光型led、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法 |
JPH10242574A (ja) * | 1997-02-25 | 1998-09-11 | Hitachi Ltd | 半導体光素子 |
JPH10275936A (ja) * | 1997-03-28 | 1998-10-13 | Rohm Co Ltd | 半導体発光素子の製法 |
JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
JP2007129143A (ja) * | 2005-11-07 | 2007-05-24 | Nichia Chem Ind Ltd | 半導体素子の製造方法 |
JP2011129718A (ja) * | 2009-12-17 | 2011-06-30 | Showa Denko Kk | 基板、テンプレート基板、半導体発光素子、半導体発光素子の製造方法、半導体発光素子を用いた照明装置および電子機器 |
JP2011199122A (ja) * | 2010-03-23 | 2011-10-06 | Toyoda Gosei Co Ltd | 半導体発光素子の製造方法 |
JP2012138452A (ja) * | 2010-12-27 | 2012-07-19 | Panasonic Corp | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
JP2013016576A (ja) * | 2011-07-01 | 2013-01-24 | Fuji Mach Mfg Co Ltd | 半導体パッケージ |
JP2013514642A (ja) * | 2009-12-18 | 2013-04-25 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
DE102011054891A1 (de) * | 2011-10-28 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
US6611050B1 (en) * | 2000-03-30 | 2003-08-26 | International Business Machines Corporation | Chip edge interconnect apparatus and method |
DE10038671A1 (de) * | 2000-08-08 | 2002-02-28 | Osram Opto Semiconductors Gmbh | Halbleiterchip für die Optoelektronik |
US6869861B1 (en) * | 2001-03-08 | 2005-03-22 | Amkor Technology, Inc. | Back-side wafer singulation method |
CN1241253C (zh) * | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
US6933212B1 (en) * | 2004-01-13 | 2005-08-23 | National Semiconductor Corporation | Apparatus and method for dicing semiconductor wafers |
US7129114B2 (en) * | 2004-03-10 | 2006-10-31 | Micron Technology, Inc. | Methods relating to singulating semiconductor wafers and wafer scale assemblies |
US8124454B1 (en) * | 2005-10-11 | 2012-02-28 | SemiLEDs Optoelectronics Co., Ltd. | Die separation |
US20090102070A1 (en) * | 2007-10-22 | 2009-04-23 | International Business Machines Corporation | Alignment Marks on the Edge of Wafers and Methods for Same |
US8211781B2 (en) * | 2008-11-10 | 2012-07-03 | Stanley Electric Co., Ltd. | Semiconductor manufacturing method |
US8216867B2 (en) * | 2009-06-10 | 2012-07-10 | Cree, Inc. | Front end scribing of light emitting diode (LED) wafers and resulting devices |
DE102009058345B4 (de) * | 2009-12-15 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser |
US8866153B2 (en) * | 2010-01-19 | 2014-10-21 | Sharp Kabushiki Kaisha | Functional element and manufacturing method of same |
GB2484711A (en) * | 2010-10-21 | 2012-04-25 | Optovate Ltd | Illumination Apparatus |
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2013
- 2013-07-25 DE DE102013107971.7A patent/DE102013107971A1/de not_active Withdrawn
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2014
- 2014-07-17 CN CN201480053076.9A patent/CN105580145B/zh not_active Expired - Fee Related
- 2014-07-17 WO PCT/EP2014/065445 patent/WO2015011028A1/de active Application Filing
- 2014-07-17 JP JP2016528450A patent/JP6277270B2/ja not_active Expired - Fee Related
- 2014-07-17 US US14/906,724 patent/US20160163939A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283757A (ja) * | 1993-03-25 | 1994-10-07 | Kyocera Corp | Ledアレイの製造方法 |
JPH0832110A (ja) * | 1994-07-19 | 1996-02-02 | Oki Electric Ind Co Ltd | 端面発光型led、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法 |
JPH10242574A (ja) * | 1997-02-25 | 1998-09-11 | Hitachi Ltd | 半導体光素子 |
JPH10275936A (ja) * | 1997-03-28 | 1998-10-13 | Rohm Co Ltd | 半導体発光素子の製法 |
JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
JP2007129143A (ja) * | 2005-11-07 | 2007-05-24 | Nichia Chem Ind Ltd | 半導体素子の製造方法 |
JP2011129718A (ja) * | 2009-12-17 | 2011-06-30 | Showa Denko Kk | 基板、テンプレート基板、半導体発光素子、半導体発光素子の製造方法、半導体発光素子を用いた照明装置および電子機器 |
JP2013514642A (ja) * | 2009-12-18 | 2013-04-25 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
JP2011199122A (ja) * | 2010-03-23 | 2011-10-06 | Toyoda Gosei Co Ltd | 半導体発光素子の製造方法 |
JP2012138452A (ja) * | 2010-12-27 | 2012-07-19 | Panasonic Corp | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
JP2013016576A (ja) * | 2011-07-01 | 2013-01-24 | Fuji Mach Mfg Co Ltd | 半導体パッケージ |
DE102011054891A1 (de) * | 2011-10-28 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
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US20160163939A1 (en) | 2016-06-09 |
CN105580145A (zh) | 2016-05-11 |
WO2015011028A1 (de) | 2015-01-29 |
JP6277270B2 (ja) | 2018-02-07 |
CN105580145B (zh) | 2018-07-06 |
DE102013107971A1 (de) | 2015-01-29 |
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