JP2016529693A - 平坦化によってはんだパッド形態差を低減する方法 - Google Patents
平坦化によってはんだパッド形態差を低減する方法 Download PDFInfo
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- JP2016529693A JP2016529693A JP2016520772A JP2016520772A JP2016529693A JP 2016529693 A JP2016529693 A JP 2016529693A JP 2016520772 A JP2016520772 A JP 2016520772A JP 2016520772 A JP2016520772 A JP 2016520772A JP 2016529693 A JP2016529693 A JP 2016529693A
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- Prior art keywords
- solder
- metal layer
- solder pad
- chip
- pad
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 152
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000007747 plating Methods 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
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Abstract
Description
Claims (20)
- 第1の表面と該第1の表面とは反対の第2の表面とを有する電子デバイスを設け、
前記第1の表面の上第1の距離の第1のはんだパッドと、前記第1の表面の上第2の距離の第2のはんだパッドとを設け、前記第1の距離は前記第2の距離と異なり、
前記第1のはんだパッドの上に第1の金属層部分を堆積し、
前記第2のはんだパッドの上に第2の金属層部分を堆積し、
前記第1の金属層部分及び前記第2の金属層部分を、それぞれ、第3の表面及び第4の表面を有するように平坦化し、前記第3の表面及び前記第4の表面は同じ平面内にあり、
前記第1の金属層部分の上に第1のはんだ層を堆積し、且つ
前記第2の金属層部分の上に第2のはんだ層を堆積し、前記第1のはんだ層の頂面が、前記第2のはんだ層の頂面と実質的に同じ平面内にあるようにする、
ことを有する方法。 - 当該方法は更に、
前記第1のはんだパッドと前記第2のはんだパッドとの間に誘電体層を設ける
ことを有し、
前記堆積された第1の金属層部分は、前記第1のはんだパッドに接続された第5の表面と、前記第5の表面とは反対の第6の表面とを有し、
前記堆積された第2の金属層部分は、前記第2のはんだパッドに接続された第7の表面と、前記第7の表面とは反対の第8の表面とを有し、且つ
前記誘電体層は、前記第6及び第8の表面の如何なる箇所よりも、前記第1の表面に近い、
請求項1に記載の方法。 - 前記電子デバイスは、ウェハからの個片化後のチップである、請求項1に記載の方法。
- 前記第1のはんだパッドに対応する第3のはんだパッドと、前記第2のはんだパッドに対応する第4のはんだパッドとを有する基板に対して、前記チップを位置決めし、
前記第1のはんだ層を前記第3のはんだパッドに接合し、且つ
前記第2のはんだ層を前記第4のはんだパッドに接合する、
ことを更に有する請求項3に記載の方法。 - 前記第1のはんだ層を前記第3のはんだパッドに接合すること、及び前記第2のはんだ層を前記第4のはんだパッドに接合することは、はんだリフローによる、請求項4に記載の方法。
- 前記第1のはんだ層を前記第3のはんだパッドに接合すること、及び前記第2のはんだ層を前記第4のはんだパッドに接合することは、超音波ボンディングによる、請求項4に記載の方法。
- 前記第1の金属層部分を堆積すること、及び前記第2の金属層部分を堆積することは、前記第1のはんだパッド及び前記第2のはんだパッドの上に金属をめっきすることによって実行される、請求項1に記載の方法。
- 当該方法は更に、
前記第1のはんだパッドと前記第2のはんだパッドとの間に誘電体部分を設ける
ことを有し、
前記第1の金属層部分及び前記第2の金属層部分を平坦化することは、前記誘電体部分よりも高いように前記第1の金属層部分及び前記第2の金属層部分を平坦化することを有する、
請求項1に記載の方法。 - 前記電子デバイスは、ウェハからの個片化後のチップであり、前記チップはフリップチップ発光ダイオードである、請求項1に記載の方法。
- 前記電子デバイスは、ウェハからの個片化後のチップであり、前記チップは集積回路である、請求項1に記載の方法。
- 前記平面は前記第1の表面に実質的に平行である、請求項1に記載の方法。
- 前記平面は、前記第1の表面に対して或る角度にある、請求項1に記載の方法。
- 第1の表面と該第1の表面とは反対の第2の表面とを有する電子デバイスと、
前記第1の表面の上第1の距離の第1のはんだパッド、及び前記第1の表面の上第2の距離の第2のはんだパッドであり、前記第1の距離は前記第2の距離と異なる、第1及び第2のはんだパッドと、
前記第1のはんだパッドの上の第1の金属層部分と、
前記第2のはんだパッドの上の第2の金属層部分であり、第1の金属層及び第2の金属層が平坦化されて、それぞれ、第3の表面及び第4の表面を有し、前記第3の表面及び前記第4の表面は同じ平面内にある、第2の金属層部分と、
平坦化された前記第1の金属層部分の上の第1のはんだ層と、
平坦化された前記第2の金属層部分の上の第2のはんだ層であり、前記第1のはんだ層の頂面が、当該第2のはんだ層の頂面と実質的に同じ平面内にある、第2のはんだ層と、
を有するエレクトロニクス構造体。 - 当該構造体は更に、
前記第1のはんだパッドに対応する第3のはんだパッドと、前記第2のはんだパッドに対応する第4のはんだパッドとを有する基板
を有し、
前記第1のはんだ層は前記第3のはんだパッドに接合され、且つ
前記第2のはんだ層は前記第4のはんだパッドに接合されている、
請求項13に記載の構造体。 - 前記第1の金属層部分及び前記第2の金属層部分はめっき層である、請求項13に記載の構造体。
- 当該構造体は更に、
前記第1のはんだパッドと前記第2のはんだパッドとの間の誘電体部分
を有し、
前記第1の金属層部分及び前記第2の金属層部分は、前記誘電体部分よりも高いように平坦化されている、
請求項13に記載の構造体。 - 前記チップはフリップチップ発光ダイオードである、請求項13に記載の構造体。
- 前記チップは集積回路である、請求項13に記載の構造体。
- 前記平面は前記第1の表面に実質的に平行である、請求項13に記載の構造体。
- 前記平面は、前記第1の表面に対して或る角度にある、請求項13に記載の構造体。
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PCT/IB2014/061968 WO2014207590A2 (en) | 2013-06-24 | 2014-06-05 | Reducing solder pad topology differences by planarization |
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EP3014653B1 (en) | 2019-09-18 |
WO2014207590A3 (en) | 2015-05-07 |
CN105308732A (zh) | 2016-02-03 |
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