JP2016516327A - 導波路および半導体パッケージング - Google Patents
導波路および半導体パッケージング Download PDFInfo
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- JP2016516327A JP2016516327A JP2015561339A JP2015561339A JP2016516327A JP 2016516327 A JP2016516327 A JP 2016516327A JP 2015561339 A JP2015561339 A JP 2015561339A JP 2015561339 A JP2015561339 A JP 2015561339A JP 2016516327 A JP2016516327 A JP 2016516327A
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- wafer
- waveguide
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- layer
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- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004806 packaging method and process Methods 0.000 title description 10
- 235000012431 wafers Nutrition 0.000 claims abstract description 127
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 56
- 229910000679 solder Inorganic materials 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000012536 packaging technology Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 104
- 229920002120 photoresistant polymer Polymers 0.000 description 62
- 238000003384 imaging method Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000010931 gold Substances 0.000 description 13
- 230000007704 transition Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 238000013459 approach Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 238000000708 deep reactive-ion etching Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011111 cardboard Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003897 fog Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- -1 stonework Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/002—Manufacturing hollow waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/02—Waveguide horns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
- H01L2223/6633—Transition between different waveguide types
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13109—Indium [In] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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Abstract
Description
この発明は、国防省高度研究プロジェクト庁によって与えられた契約番号W911QX−C−0066の下で、政府支援でなされた。政府はこの発明における権利を有している。
<優先権の主張>
この出願は、2013年3月8日に申請された「WAVEGUIDE AND SEMICONDUCTOR PACKAGING」と題する米国仮出願第61/775,451号、及び2013年3月8日に申請された「DEEP TRENCH WAFER PATTERNING」と題する米国仮出願第61/775,454号の優先権を主張する。
本明細書に記載されるように、シリコンあるいは他のウエハ(例えばグラス)は両方とも、ウエハスケール・パッケージングによるパッケージとして使用されることができ、またさらに多数のチップのために相互に連結する導波路として使用され得る。多数のシリコンウエハは受動的シリコン導波素子を形成するために組み合わせることができる。チップが導波路とは別々に形成されるので、異なる組立て技術がチップとパッケージングに使用することができる。例えば、III−Vウエハから特定化されたチップは、シリコン・パッケージおよび導波路内で集積されうる。チップは、半田ボール、マイクロバンプ、半田マイクロバンプあるいは銅のマイクロバンプを使用して、シリコン・パッケージと動作可能に結合され得る。マイクロバンプはアメリカ合衆国オレゴン州、ポートランドにて2010年5月17日−20日開催のCS MANTECHConferenceでのX.Zeng氏の「Wafer Level Bump Technology For III−V MMIC Manufacturing」に開示され、その内容が参照によって組込まれる。半田ボールはスルー・ウエハ(thru−wafer)を使用して、パッケージの外部に電気的なDC接続を提供し得る。一実施例において、銅のマイクロバンプは半田キャップを備えた50μmの銅めっきを使用して形成される。半田ボールの様々な寸法が可能であるが、本明細書に開示された実装は、3milの半田ボール、あるいは随意に5milの半田ボールに基づく。これらの特徴は、様々な活性技術の集積化およびさらに既知の良好な活性を有するダイの使用を考慮に入れることを可能にする。
図2Aのチップ中間層(102)の組立ては、図5と共に工程(200)で始まる図4のフローチャートの最初のカラムに関して記載される。それは、組立ての様々な工程の間にグラフでチップ中間層を表す。図4の工程(202)では、チップ中間層(102)の組立ては、図5において(310)で示されるように砒化ガリウム(GaAs)(340)の層から始まる。好ましい実施形態では、GaAs層(340)は厚さ500−600μmで、100umの厚さまで薄くなる。工程(202)を継続し、DCルーティントレース(342)はGaAs層340の上部表面にパターニングされる。
図2Aの導波路層(104)の組立ては、図6と共に工程(214)で始まる図4のフローチャートの第2のカラムに関して記載され、それは、組立ての様々な工程の間にグラフ的に導波路層を表す。図4の工程(216)で、プラズマ助長の化学蒸着法(PECVD)酸化物(384)は、図6の(370)で示されるシリコンウエハ(382)の両面に置かれる。好ましい実施形態において、シリコンウエハ(382)は、およそ300μmと350μmの間の厚さを有している。代替の厚さは当業者に明白であり、所望のパラメータに基づき得る。図6の(372)で、シリコン層(382)の上部の酸化物は、例えば、図4の工程(218)に述べられているようなRIEプロセスを使用してエッチングされる。導波路層(104)の組立てに関する特定の詳細は、図12〜15に関して以下に与えられるだろう。
一般に、図2Aのチップ(108)、(110)および(112)の1つ以上は、GaAsまたはInPのようなIII−V半導体から形成され得る。代替のウエハ材料は当業者に明白であり、デバイス(100)で使用される各チップに対して同じである必要がない。LNAと検出器のチップのための特定の処理詳細は以下に議論されるだろう。一般に、ウエハの「正面側」の処理中に複数のチップを作成するために、1以上の「ホットビア(hot via)」相互連結が、それらの背部からチップの正面側にDCをもたらすために加えられるか、あるいは映像信号を提供する。
図2AのLNAチップ(108)および(110)の組立ては、図7Aおよび7Bと共に工程(228)で始まる図4のフローチャートの第3カラムに関して記載されるだろう。図4の工程(230)では、組立ては、GaAsまたはInPのようなIII−V半導体の正面の横のTHz HEMTプロセスから始まる。その後、工程(232)では、背部THz HEMT組立てを行なうことができるように、ウエハはフリップ処理される。
図7Bに示されるように、LNAと検出器チップは集積された電磁遷移を使用して、DRIE形成された導波路に結合される。E−面プローブは、図1Aのホーンアンテナ(122)と図7Bに示されるようなLNAチップ(110)との間に相互連結される。これは、稠密な集積化がコンポーネント同士の間隔を最小限にすることを可能にし、配列のスケーラビリティに不可欠である。MMIC間の距離は、コンパクトな画素寸法を実現し、かつ最小の相互連結損失を提供する。
図4の工程242乃至 258に示されるように、ZBDチップ(112)は同様にLNAチップに作り上げられる。好ましい実施形態では、ZBD(112)は、マイクロ波及びミリ波信号のバイアスされていないミクシング、逓倍及び直接の検波を提供するnIN疑似ショットキーダイオードを使用する。一実施例において、検出器(112)は、検波回路バイアスの必要をなくす「零バイアス・ダイオード」である。これは総合システムを単純化し、システムノイズを低減する。ダイオードの一例はSawdaiらの(米国特許第8,334,550号)に開示され、その内容は参照によって組込まれている。このアプローチでは、高濃度にドープした(InGaAsなどの)n+狭バンドギャップ層は、標準的なショットキーダイオード中の陽極金属を交換する。したがって、有効なショットキーバリアは、n+アノード層と最低値にドープしたカソード層の間のエピタキシアル成長したヘテロ接合である。ヘテロ接合は所望のバリアの高さを生産するために調整することができる、したがってダイオード・ターンオン電圧のチューニングを可能にする。最初の結果は、n−I−N疑似ショットキーダイオードが、高周波に計量可能で、十分に零バイアス検出器として使用のために0Vで整流して、容易に作り上げられることを実証した。ダイオードは、520GHzまで、およびより好ましくは740GHzまでのしゃ断周波数fCを提供する。これらのnINダイオードを使用するバイアスされていない直接の検波回路は、195GHz(図20)で付帯的なRFのための>3000V/Wの応答を実証した。シミュレートされた検波応答は340GHzの入射RF信号のために〜1400V/Wである。
このnINダイオード技術はピークγ〜27V−1、および520GHzまでのしゃ断周波数を実証した。これらの新規なnINユニポーラ装置で達成される性能指数は、他の零バイアス・ショットキーダイオードと比較可能である。
図4の工程226で示されるように、マイクロ画素を組み立てる第1工程は、図8の400で示されるようなチップ中間層(102)に導波路層(104)を結合することを含んでいる。低温ボンディングプロセスは半田ボール(例えばインジウム−Auボンディング又はAu−Au熱圧着)への熱接触を最小限にするために使用される。
図2Aのアンテナ層(106)の製造は、図9と共に工程264で始まる図4のフローチャートの最後のカラムに関連して記載され、製造中の様々な工程の間にグラフ式にアンテナ層を表す。図4の工程266で、シリコンの1mmの厚さのウエハ(424)、例えばプラズマ強化化学蒸着法(PECVD)酸化物(430)は、図9の410で描かれるように、シリコンウエハ(424)の下側に成膜される。412で示されるように、酸化物(430)がエッチングされる。
図4の工程276で、アンテナ層(106)は、In/Au接着剤あるいはAu/Au 熱−圧縮接着剤で導波路層(104)に接合される。追加の金属フィルム(インジウムなど)は、層(104または106)に追加される必要があり得、そのプロセスは、以下のセクション9で述べる。最後に、図4の工程278で、組み立てられた層は、個々の画素へと方形切断される。
本明細書に記載された集積化アプローチおよび特徴は、異なるウエハ技術を備えたチップおよび導波路のバッチ組立てを可能にする。異なる半導体技術の中で作り上げられ、低損失のマイクロマシン処理された導波路トランジションを介して接続されたチップの集積化は、改善された素子性能を可能にする。本明細書に記載されたmFPA実装に適用されるように、公知の良好なチップとの三角形の格子の2−Dサブアレイの完全に積層された330〜350GHzの焦点面配列が製造され得、高密度、LNA、検波器及びミクロスケール画素のミクロンの精度の集積化を提供する。図2Aに示されるmFPAは、およそ0.4cm×0.18cm×0.135cmの寸法で作り上げられた。
マイクロマシン処理された導波路(WG)は、WGの空胴を形成するためにウエハにディープトレンチを使用する。WGトレンチを備えたトレンチ・ウエハは、WGを完成するために、しばしば1つ以上の追加のウエハに集積される。例えば、トレンチ・ウエハはWGの空胴を密閉するためにカバーウエハおよび(または)底ウエハに集積され得る。追加の処理および(または)パターニングはトレンチ・ウエハにおけるトレンチの形成後に必要とされ得る。例えば、トレンチ・ウエハは、さらにWG空胴の内部に置かれたチップで集積する必要があり得る。
しかしながら、トレンチ深さがほぼ30乃至50μm以上である場合、湿ったホトレジスト(PR)は特にトレンチ・エッジの近くでトレンチの形成後にパターニングするのにふさわしくないかもしれない。例えば、湿ったPRは、ほぼ200μmの高さのトレンチ・サイドウォールを十分に被覆しないかもしれない。別の例において、追加処理は、トレンチの内部、例えば半田パッドおよび(または)ウエハ上面表面からトレンチ内に延びる金属ラインに必要とされ得る。実験は、これらのパターンは湿ったPRを使用して達成するのが難しいことを示した。
Claims (22)
- サブミリメートル波長(SMMW)デバイスを製造する方法であって、該方法は、
1つ以上のDCスルーバイアスを含むように第1ウエハをバッチ処理する工程、
前記第1ウエハの上部表面に1つ以上の半田・バンプを堆積する工程、
前記半田・バンプと整列した1つ以上の空胴を作るために第2ウエハをバッチ処理する工程、
前記第2ウエハの下部表面を前記第1ウエハの上部表面と接合する工程、
モノリシックマイクロ波集積回路(MMIC)チップを形成するために半導体材料の1つ以上の第3ウエハをバッチ処理する工程、及び
前記1以上の第3ウエハを個々のMMICチップへと方形切断する工程、及び
前記1以上のMMICチップを前記第2ウエハの空胴に設ける工程
を含む方法。 - 前記第2ウエハの1以上の空洞と整列した1以上のアンテナを形成するために第4ウエハをバッチ処理する工程、及び
前記第4ウエハを前記第2ウエハの上部表面と接合する工程を更に含む請求項1に記載の方法。 - 前記1以上のアンテナがホーンアンテナである請求項2に記載の方法。
- 前記第1、第2及び第4ウエハがウエハスケール・アセンブリ(WSA)技術を使用して組み立てられる請求項2に記載の方法。
- 前記第2ウエハの空胴が導波路を含む請求項1に記載の方法。
- 前記第1ウエハがGaAsであり、前記第2及び第4ウエハがシリコンであり、前記第3ウエハがIII−V半導体材料である請求項1に記載の方法。
- 前記MMICが動作可能性に関してテストされ、公知で良好なチップのみが前記第2ウエハの空洞に設けられる請求項1に記載の方法。
- 前記MMICが能動的な回路類を含んでいる請求項1に記載の方法。
- 前記MMICが均質でない材料とプロセスを使用して製造される請求項7に記載の方法。
- 前記MMICチップに電気的な相互連結を提供するために、半田・バンプが前記DCバイアスに整列される請求項1に記載の方法。
- サブミリメートル波長(SMMW)焦点面配列(FPA)用の画素であって、
DCスルーバイアスと該DCスルーバイアスと整列する半田・バンプを含むチップ・インターフェース、
前記チップ・インターフェースの上部表面上の半田・バンプと整列する1つ以上の空胴を含む導波路、
前記導波路の空胴に挿入された1つ以上のモノリシックマイクロ波集積回路(MMIC)チップ、及び
前記導波路の空胴の少なくとも1つと整列したアンテナを含み、
そこでは、SMMW信号はアンテナによって受け取られ、前記導波路の空胴を通して送信され、前記MMICチップによって処理される画素。 - 前記チップ・インターフェースがウエハと前記導波路から製造され、アンテナは1つ以上のウエハから製造される請求項11に記載の画素。
- 前記チップ・インターフェース・ウエハおよび前記1つ以上の導波路およびアンテナ・ウエハがウエハスケール・パッケージング技術を用いて集積される請求項12に記載の画素。
- 前記アンテナがホーンアンテナである請求項11に記載の画素。
- 前記MMICチップにおいて、1つ以上の低ノイズ増幅器(LNA)および1つ以上のダイオードを含む請求項11に記載の画素。
- 前記チップ・インターフェース、前記導波路、前記アンテナおよび前記MMICチップが各々別々に製造される請求項11に記載の画素。
- 前記MMICが動作可能性に関してテストされ、公知で良好なチップのみが前記導波路の空胴に入れられる請求項11に記載の画素。
- 第1層であって、該第1層の一方の側から他方の側まで複数の電気的導通を含む第1層、
前記第1層の電気的導通と整列した複数の導波路空胴を含む第2層、
前記複数の導波路空胴に挿入され、前記第1層の電気的導通と動作可能に接続された複数のモノリシックマイクロ波集積回路(MMIC)チップ、及び
複数のアンテナを含む第3層であって、該複数のアンテナが前記複数の導波路空胴に整列する複数のアンテナを含むサブミリメートル波長(SMMW)焦点面配列(FPA)。 - 前記MMICチップが低ノイズ増幅器(LNA)およびダイオードをさらに含む請求項18に記載のFPA。
- 前記第1、第2、第3層および前記MMICチップが各々別々に作り上げられる請求項19に記載のFPA。
- 前記MMICチップがIII−V半導体材料から製造され、前記第1、第2及び第3層がバッチ処理される請求項19に記載のFPA。
- 前記第1、第2及び第3層がウエハスケール・アセンブリ(WSA)技術を用いて組み立てられる請求項18に記載のFPA。
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Also Published As
Publication number | Publication date |
---|---|
US20140254979A1 (en) | 2014-09-11 |
WO2014137484A1 (en) | 2014-09-12 |
EP2965356A1 (en) | 2016-01-13 |
US20170018597A1 (en) | 2017-01-19 |
US9960204B2 (en) | 2018-05-01 |
US9478458B2 (en) | 2016-10-25 |
JP6176869B2 (ja) | 2017-08-09 |
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