JP2016207720A - めっき処理方法、記憶媒体およびめっき処理システム - Google Patents
めっき処理方法、記憶媒体およびめっき処理システム Download PDFInfo
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- JP2016207720A JP2016207720A JP2015084434A JP2015084434A JP2016207720A JP 2016207720 A JP2016207720 A JP 2016207720A JP 2015084434 A JP2015084434 A JP 2015084434A JP 2015084434 A JP2015084434 A JP 2015084434A JP 2016207720 A JP2016207720 A JP 2016207720A
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】めっき処理方法は、凹部(112)の内表面を含む基板の表面に、触媒層(118)を形成する触媒層形成工程と、触媒層が形成された基板を凹部の内部まで乾燥させる乾燥工程と、乾燥した基板を回転させながら、基板の表面を構成する物質を溶解しうる処理液を乾燥した基板の表面に供給し、これにより、乾燥していた凹部の内部への処理液の浸入を防止または抑制しながら、少なくとも凹部の外側の基板の表面にある触媒層を除去する除去工程と、無電解めっき法により、触媒層が形成された凹部の内部にめっき層(119)を形成するめっき工程とを含む。
【選択図】図2
Description
4 第1前処理部(触媒層形成ユニット)
6 第2前処理部(触媒層除去ユニット)
8 めっき処理部(めっき処理ユニット)
100,120 基板
110,126a 表面
112,126b 凹部
118,128 触媒層
119,130 めっき層
Claims (8)
- 表面に凹部が形成された基板を準備する工程と、
前記凹部の内表面を含む前記基板の表面に、触媒層を形成する触媒層形成工程と、
前記触媒層が形成された前記基板を、前記凹部の内部まで乾燥させる乾燥工程と、
乾燥した前記基板を回転させながら、前記基板の表面を構成する物質を溶解しうる処理液を前記基板の表面に供給し、これにより、乾燥していた前記凹部の内部への前記処理液の浸入を防止または抑制しながら、少なくとも前記凹部の外側の前記基板の前記表面にある触媒層を除去する除去工程と、
無電解めっき法により、前記触媒層が形成された前記凹部の内部にめっき層を形成するめっき工程と、
を備えためっき処理方法。 - 前記触媒層形成工程は、
金属触媒イオンを含有する触媒液を基板に接触させることにより、金属触媒イオンを前記基板の表面に付着させる付着工程と、
前記金属触媒イオンを還元して金属とする還元工程と
を含む請求項1記載のめっき処理方法。 - 前記金属はパラジウムである、請求項2記載のめっき処理方法。
- 前記めっき層はNiBからなる、請求項1から3のうちのいずれか一項に記載のめっき処理方法。
- 前記処理液が希フッ酸であり、前記基板の表面を構成している物質が前記希フッ酸により溶解することができるシリコンまたはシリコン化合物である、請求項1から4のうちのいずれか一項に記載のめっき処理方法。
- 前記基板の表面を構成している物質がレジストであり、前記処理液がレジストを溶解しうる溶剤である、請求項1から4のうちのいずれか一項に記載のめっき処理方法。
- めっき処理システムの動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記めっき処理システムを制御して請求項1から6のうちのいずれか一項に記載のめっき処理方法を実行させるプログラムが記録された記憶媒体。
- 表面に凹部を有する基板に対して、前記凹部の内表面を含む前記基板の表面に触媒層を形成するとともに、前記触媒層が形成された前記基板を、前記凹部の内部まで乾燥させる第1前処理部と、
乾燥した前記基板を回転させながら、前記基板の表面を構成する物質を溶解しうる処理液を乾燥した前記基板の表面に供給し、これにより、乾燥していた前記凹部の内部への前記処理液の浸入を防止または抑制しながら、少なくとも前記凹部の外側の前記基板の前記表面にある触媒層を除去する第2前処理部と、
無電解めっき法により、前記触媒層が形成された前記凹部の内部にめっき層を形成するめっき処理部と、
を備えためっき処理システム。
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WO2019151023A1 (ja) * | 2018-02-05 | 2019-08-08 | 東京エレクトロン株式会社 | 多層配線の形成方法、多層配線形成装置および記憶媒体 |
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