JP2016178323A - ハイブリッド能動フィールドギャップ拡張ドレインmosトランジスタ - Google Patents
ハイブリッド能動フィールドギャップ拡張ドレインmosトランジスタ Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims description 37
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- UVGLBOPDEUYYCS-UHFFFAOYSA-N silicon zirconium Chemical compound [Si].[Zr] UVGLBOPDEUYYCS-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (13)
- 集積回路であって、
基板と、
拡張されたドレイン金属酸化物半導体(MOS)トランジスタと、
を含み、
前記拡張されたドレインMOSトランジスタが、
前記基板内の拡張されたドレインであって、前記拡張されたドレインがドリフト領域を含み、前記ドリフト領域が、交互の、フィールドギャップドリフト領域及び能動ギャップ領域を含む、前記拡張されたドレイン、
前記基板内のチャネル領域であって、前記ドリフト領域に接する前記チャネル領域、
前記フィールドギャップドリフト領域の近傍であり且つ前記チャネル領域とは反対側に位置する、前記拡張されたドレイン内のフィールド酸化物要素であって、前記拡張されたドレインが前記フィールド酸化物要素下に延びるようになっている、前記フィールド酸化物要素、
前記チャネル領域及び前記ドリフト領域の上で前記基板上のゲート誘電体層、
前記チャネル領域の上の前記ゲート誘電体層上のゲートであって、前記ゲートが、前記フィールドギャップドリフト領域の上のフィールドプレートを含み、前記フィールドプレートが前記フィールド酸化物要素上に延びる、前記ゲート、及び
前記チャネル領域に接し且つ前記ゲートに近接する、前記基板内のソース、
を含む、集積回路。 - 請求項1の集積回路であって、
各前記能動ギャップ領域に近接する少なくとも1つの前記ドレインコンタクト、及び前記フィールド酸化物要素に重なる前記フィールドプレートとは反対側の各前記フィールド酸化物要素に近接する少なくとも1つの前記ドレインコンタクトがある、集積回路。 - 請求項1の集積回路であって、
前記フィールドプレートが先細の形状を有し、前記フィールド酸化物要素の上の各前記フィールドプレートのドレイン端部幅が、前記フィールドプレートの前記フィールド酸化物要素とは反対側の各前記フィールドプレートのソース端部幅より少なくとも100ナノメートル小さくなるようになっている、集積回路。 - 請求項1の集積回路であって、
前記フィールドプレートが、逆向き(retrograde)先細の形状を有し、前記フィールド酸化物要素の上の各前記フィールドプレートのドレイン端部幅が、前記フィールドプレートの前記フィールド酸化物要素とは反対側の各前記フィールドプレートのソース端部幅より少なくとも100ナノメートル大きくなるようになっている、集積回路。 - 請求項1の集積回路であって、
前記拡張されたドレインMOSトランジスタが、
前記能動ギャップ領域及び前記フィールド酸化物要素に接する前記拡張されたドレイン内のドレインコンタクト拡散された領域、
前記ドレインコンタクト拡散された領域上のドレインコンタクト、及び
前記ソース上のソースコンタクト、
を更に含む、集積回路。 - 集積回路であって、
基板と、
対称ネステッド(nested)構成の拡張されたドレインMOSトランジスタと、
を含み、
前記拡張されたドレインMOSトランジスタが、 前記基板内の拡張されたドレインであって、前記拡張されたドレインが、前記拡張されたドレインMOSトランジスタの第1の部分内の第1のドリフト領域と、前記拡張されたドレインMOSトランジスタの第2の部分内の第2のドリフト領域とを含み、前記第1のドリフト領域が、交互の、第1のフィールドギャップドリフト領域及び第1の能動ギャップ領域を含み、前記第2のドリフト領域が、交互の、第2のフィールドギャップドリフト領域及び第2の能動ギャップ領域を含む、前記拡張されたドレイン、
前記第1の部分内の前記基板内の第1のチャネル領域であって、前記第1のドリフト領域に接する、前記第1のチャネル領域、
前記第2の部分内の前記基板内の第2のチャネル領域であって、前記第2のチャネル領域が前記第2のドリフト領域に接し、前記第2のチャネル領域が、前記拡張されたドレインの前記第1のチャネル領域とは反対側に位置するようになっている、前記第2のチャネル領域、
前記拡張されたドレインにおいて交互の線形構成に配置されるフィールド酸化物要素であって、前記拡張されたドレインが前記フィールド酸化物要素下に延びるように、且つ、前記フィールド酸化物要素が、前記第1のチャネル領域とは反対側の前記第1のフィールドギャップドリフト領域に近接して且つ及び前記第2のチャネル領域とは反対側の前記第2のフィールドギャップドリフト領域に近接して位置するようになっている、前記フィールド酸化物要素、
前記第1のチャネル領域及び前記第1のドリフト領域の上であり、且つ、前記第2のチャネル領域及び前記第2のドリフト領域の上の、前記基板上のゲート誘電体層、
前記第1のチャネル領域の上の前記ゲート誘電体層上の第1のゲート部であって、前記第1のゲート部が、前記第1のフィールドギャップドリフト領域の上の第1のフィールドプレートを含み、前記第1のフィールドプレートが前記フィールド酸化物要素上に延びる、前記第1のゲート部、
前記第2のチャネル領域の上の前記ゲート誘電体層上の第2のゲート部であって、前記第2のゲート部が、前記第2のフィールドギャップドリフト領域の上の第2のフィールドプレートを含み、前記第2のフィールドプレートが前記フィールド酸化物要素上に延びる、前記第2のゲート部、
前記第1のチャネル領域に接し且つ前記第1のゲート部に近接する前記基板内の第1のソース、
前記第2のチャネル領域に接し且つ前記第2のゲート部に近接する前記基板内の第2のソース、
前記第1の能動ギャップ領域及び前記第2の能動ギャップ領域に近接する前記ドレインコンタクト拡散された領域上のドレインコンタクト、
前記第1のソース上の第1のソースコンタクト、及び
前記第2のソース上の第2のソースコンタクト、
を含む、集積回路。 - 請求項6の集積回路であって、
前記ドレインコンタクトが、各前記第1の能動ギャップ領域及び各前記第2の能動ギャップ領域に近接して形成される、集積回路。 - 請求項7の集積回路であって、
前記拡張されたドレインMOSトランジスタが、
前記第1の能動ギャップ領域、前記第2の能動フィールド領域、及び前記フィールド酸化物要素に接する前記拡張されたドレイン内のドレインコンタクト拡散された領域、
前記第1の能動ギャップ領域及び前記第2の能動ギャップ領域に近接する前記ドレインコンタクト拡散された領域上のドレインコンタクト、
前記第1のソース上の第1のソースコンタクト、及び
前記第2のソース上の第2のソースコンタクト、
を更に含む、集積回路。 - 集積回路を形成するプロセスであって、
基板を提供することと、
拡張されたドレインMOSトランジスタを形成することと、
を含み、
前記拡張されたドレインMOSトランジスタを形成することが、
前記基板内に拡張されたドレインを形成する工程であって、前記拡張されたドレインが、交互のフィールドギャップドリフト領域及び能動ギャップ領域を備えたドリフト領域を含み、且つ、前記拡張されたドレインMOSトランジスタのチャネル領域に接するようにする、工程、
チャネル領域が前記ドリフト領域に接するように、前記基板内にチャネル領域を形成する工程、
前記フィールドギャップドリフト領域に近接し且つ前記チャネル領域とは反対側の前記拡張されたドレイン内にフィールド酸化物要素を形成する工程であって、前記拡張されたドレインが前記フィールド酸化物要素下に延びるようになっている、工程、
前記チャネル領域及び前記ドリフト領域の上の前記基板上にゲート誘電体層を形成する工程、
前記チャネル領域の上の前記ゲート誘電体層上にゲートを形成する工程であって、前記ゲートが、前記フィールド酸化物要素上に延びる前記フィールドギャップドリフト領域の上のフィールドプレートを含むようにする、工程、及び
前記チャネル領域に接し且つ前記ゲートに近接する前記基板内にソースを形成する工程、
を含むプロセスによる、
プロセス。 - 請求項9のプロセスであって、
各前記能動ギャップ領域に近接する少なくとも1つの前記ドレインコンタクト、及び前記フィールド酸化物要素に重なる前記フィールドプレートとは反対側の各前記フィールド酸化物要素に近接する、少なくとも1つの前記ドレインコンタクトがある、プロセス。 - 請求項10のプロセスであって、
前記フィールドプレートが先細の形状を有し、そのため、前記フィールド酸化物要素の上の各前記フィールドプレートのドレイン端部幅が、前記フィールドプレートの前記フィールド酸化物要素とは反対側の各前記フィールドプレートソース端部幅より少なくとも100ナノメートル小さくなるようになっている、プロセス。 - 請求項11のプロセスであって、
前記フィールドプレートが逆向き先細の形状を有し、そのため、前記フィールド酸化物要素の上の各前記フィールドプレートのドレイン端部幅が、前記フィールドプレートの前記フィールド酸化物要素とは反対側の各前記フィールドプレートのソース端部幅より少なくとも100ナノメートル大きくなるようになっている、プロセス。 - 請求項11のプロセスであって、
前記拡張されたドレインMOSトランジスタを形成することが、
前記能動ギャップ領域及び前記フィールド酸化物要素に接する前記拡張されたドレイン内にドレインコンタクト拡散された領域を形成する工程、
前記ドレインコンタクト拡散された領域上にドレインコンタクトを形成する工程、及び
前記ソース上にソースコンタクトを形成する工程、
を更に含む、プロセス。
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