JP2016127260A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2016127260A JP2016127260A JP2015183561A JP2015183561A JP2016127260A JP 2016127260 A JP2016127260 A JP 2016127260A JP 2015183561 A JP2015183561 A JP 2015183561A JP 2015183561 A JP2015183561 A JP 2015183561A JP 2016127260 A JP2016127260 A JP 2016127260A
- Authority
- JP
- Japan
- Prior art keywords
- processing
- wall
- mounting table
- mounting
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 191
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000005192 partition Methods 0.000 claims abstract description 80
- 230000007246 mechanism Effects 0.000 claims abstract description 24
- 230000003028 elevating effect Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 67
- 238000000034 method Methods 0.000 abstract description 32
- 230000008569 process Effects 0.000 abstract description 29
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 61
- 238000007789 sealing Methods 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67383—Closed carriers characterised by substrate supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0268—Liner tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
前記処理空間内の処理ガスは、前記仕切板と前記インナーウォールの内側面との間を、当該インナーウォールの周方向に沿って流れてもよい。
Sを形成できる。そして、インナーウォール15に形成されたスリット15cから処理空間S内の処理ガスを排気するので、各ウェハW毎にガス流れの均一性を確保し、面内均一なウェハ処理を行うことができる。
10 処理容器
11、12 載置台
13 シャワーヘッド
14 隔壁
15 インナーウォール
20 側壁
21 天井板
22 底板
32 シャワープレート
110 仕切板
W ウェハ
G 隙間
S 処理空間
V 排気空間
Claims (4)
- 基板を処理する基板処理装置であって、
基板を気密に収容する処理容器と、
前記処理容器内で基板を載置する複数の載置台と、
前記載置台の上方から前記載置台に向けて処理ガスを供給する処理ガス供給部と、
前記処理容器内を排気する排気機構と、
前記処理容器内に配置され、前記各載置台の外周と間隔をあけて当該載置台を個別に囲う隔壁と、
前記隔壁を退避位置と基板処理位置との間で昇降させる昇降機構と、
前記処理容器の底面に配置され、前記載置台の外周と間隔をあけて当該載置台を個別に囲う円筒形状のインナーウォールと、を有し、
前記隔壁を前記基板処理位置に移動させることで、前記隔壁と前記インナーウォールにより基板の処理空間が形成され、
前記インナーウォールには、スリットが形成され、
前記処理空間内の処理ガスの排気は、前記スリットを介して行われ、
前記インナーウォールは、前記処理空間内の処理ガスが前記スリットに直接流れ込まないように迂回させる仕切板を備えていることを特徴とする、基板処理装置。 - 前記インナーウォールは、前記載置台の基板載置面よりも下方に配置されていることを特徴とする、請求項1に記載の基板処理装置。
- 前記スリットは、前記インナーウォールの側面であって前記載置台の載置面よりも下方に等間隔で複数設けられ、
前記仕切板は、前記インナーウォールの中心から前記スリットを視認できなくなる位置に配置されていることを特徴とする、請求項1または2のいずれか一項に記載の基板処理装置。 - 前記仕切板は、前記インナーウォールの内側面に平行な円弧形状を有し、
前記処理空間内の処理ガスは、前記仕切板と前記インナーウォールの内側面との間を、当該インナーウォールの周方向に沿って流れることを特徴とする、請求項3に記載の基板処理装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/971,708 US10096495B2 (en) | 2014-12-26 | 2015-12-16 | Substrate processing apparatus |
KR1020150183925A KR101772775B1 (ko) | 2014-12-26 | 2015-12-22 | 기판 처리 장치 |
TW108134888A TWI712083B (zh) | 2014-12-26 | 2015-12-24 | 基板處理裝置 |
TW104143591A TWI681484B (zh) | 2014-12-26 | 2015-12-24 | 基板處理裝置 |
CN201810678335.7A CN108878324B (zh) | 2014-12-26 | 2015-12-25 | 基板处理装置 |
CN201510993622.3A CN105742211B (zh) | 2014-12-26 | 2015-12-25 | 基板处理装置 |
KR1020170105677A KR101922811B1 (ko) | 2014-12-26 | 2017-08-21 | 기판 처리 장치 |
US16/114,743 US20190006207A1 (en) | 2014-12-26 | 2018-08-28 | Substrate processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014264550 | 2014-12-26 | ||
JP2014264550 | 2014-12-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019149622A Division JP6796692B2 (ja) | 2014-12-26 | 2019-08-19 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016127260A true JP2016127260A (ja) | 2016-07-11 |
JP6574656B2 JP6574656B2 (ja) | 2019-09-11 |
Family
ID=56359840
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015183561A Active JP6574656B2 (ja) | 2014-12-26 | 2015-09-17 | 基板処理装置 |
JP2019149622A Active JP6796692B2 (ja) | 2014-12-26 | 2019-08-19 | 基板処理装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019149622A Active JP6796692B2 (ja) | 2014-12-26 | 2019-08-19 | 基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP6574656B2 (ja) |
KR (2) | KR101772775B1 (ja) |
CN (1) | CN108878324B (ja) |
TW (2) | TWI712083B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019039337A1 (ja) * | 2017-08-25 | 2019-02-28 | 東京エレクトロン株式会社 | インナーウォール及び基板処理装置 |
CN113437000A (zh) * | 2021-05-26 | 2021-09-24 | 苏雪雯 | 一种安全性能高的晶圆承载盘 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7229061B2 (ja) | 2019-03-26 | 2023-02-27 | 東京エレクトロン株式会社 | 基板のエッチング装置及びエッチング方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327767A (ja) * | 2003-04-25 | 2004-11-18 | Tokyo Electron Ltd | プラズマ処理装置 |
US20080011424A1 (en) * | 2005-08-05 | 2008-01-17 | Advanced Micro-Fabrication Equipment, Inc. Asia | Multi-station decoupled reactive ion etch chamber |
JP2009004729A (ja) * | 2007-06-20 | 2009-01-08 | Advanced Micro-Fabrication Equipment Inc Asia | 多数の処理ステーションを含む結合を除くリアクティブイオンエッチングチャンバ |
US20090028761A1 (en) * | 2007-07-27 | 2009-01-29 | Devine Daniel J | Advanced multi-workpiece processing chamber |
JP2012146854A (ja) * | 2011-01-13 | 2012-08-02 | Tokyo Electron Ltd | 基板処理装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4265839B2 (ja) | 1999-06-24 | 2009-05-20 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP4933789B2 (ja) | 2006-02-13 | 2012-05-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP4985183B2 (ja) * | 2007-07-26 | 2012-07-25 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
JP5347294B2 (ja) * | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
-
2015
- 2015-09-17 JP JP2015183561A patent/JP6574656B2/ja active Active
- 2015-12-22 KR KR1020150183925A patent/KR101772775B1/ko active IP Right Grant
- 2015-12-24 TW TW108134888A patent/TWI712083B/zh active
- 2015-12-24 TW TW104143591A patent/TWI681484B/zh active
- 2015-12-25 CN CN201810678335.7A patent/CN108878324B/zh active Active
-
2017
- 2017-08-21 KR KR1020170105677A patent/KR101922811B1/ko active IP Right Grant
-
2019
- 2019-08-19 JP JP2019149622A patent/JP6796692B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327767A (ja) * | 2003-04-25 | 2004-11-18 | Tokyo Electron Ltd | プラズマ処理装置 |
US20080011424A1 (en) * | 2005-08-05 | 2008-01-17 | Advanced Micro-Fabrication Equipment, Inc. Asia | Multi-station decoupled reactive ion etch chamber |
JP2009004729A (ja) * | 2007-06-20 | 2009-01-08 | Advanced Micro-Fabrication Equipment Inc Asia | 多数の処理ステーションを含む結合を除くリアクティブイオンエッチングチャンバ |
US20090028761A1 (en) * | 2007-07-27 | 2009-01-29 | Devine Daniel J | Advanced multi-workpiece processing chamber |
JP2010534952A (ja) * | 2007-07-27 | 2010-11-11 | マットソン テクノロジー インコーポレイテッド | 多数の加工物を処理する進歩したチャンバ |
JP2012146854A (ja) * | 2011-01-13 | 2012-08-02 | Tokyo Electron Ltd | 基板処理装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019039337A1 (ja) * | 2017-08-25 | 2019-02-28 | 東京エレクトロン株式会社 | インナーウォール及び基板処理装置 |
JP2019041026A (ja) * | 2017-08-25 | 2019-03-14 | 東京エレクトロン株式会社 | インナーウォール及び基板処理装置 |
CN113437000A (zh) * | 2021-05-26 | 2021-09-24 | 苏雪雯 | 一种安全性能高的晶圆承载盘 |
CN113437000B (zh) * | 2021-05-26 | 2023-11-21 | 鄂尔多斯市骁龙半导体有限公司 | 一种安全性能高的晶圆承载盘 |
Also Published As
Publication number | Publication date |
---|---|
KR20170099401A (ko) | 2017-08-31 |
KR101922811B1 (ko) | 2018-11-27 |
KR101772775B1 (ko) | 2017-08-29 |
JP6574656B2 (ja) | 2019-09-11 |
CN108878324B (zh) | 2022-04-12 |
TW202004890A (zh) | 2020-01-16 |
TWI712083B (zh) | 2020-12-01 |
KR20160079688A (ko) | 2016-07-06 |
JP6796692B2 (ja) | 2020-12-09 |
JP2019212923A (ja) | 2019-12-12 |
TWI681484B (zh) | 2020-01-01 |
TW201635410A (zh) | 2016-10-01 |
CN108878324A (zh) | 2018-11-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10096495B2 (en) | Substrate processing apparatus | |
JP5567392B2 (ja) | プラズマ処理装置 | |
JP6676537B2 (ja) | 基板載置台 | |
JP2019212923A (ja) | 基板処理装置 | |
KR102414566B1 (ko) | 기판의 에칭 장치 및 에칭 방법 | |
WO2015114977A1 (ja) | 基板処理装置 | |
TWI787393B (zh) | 基板處理裝置 | |
JP2012237026A (ja) | 成膜装置 | |
JP2015138885A (ja) | 基板処理装置、シャワープレート及び基板処理方法 | |
KR102554732B1 (ko) | 이너 월 및 기판 처리 장치 | |
JP2018085392A (ja) | 基板処理装置 | |
KR102378336B1 (ko) | 베이크 장치 및 베이크 방법 | |
JP2018148099A (ja) | 基板処理装置 | |
WO2016027734A1 (ja) | 基板処理装置 | |
CN111033695B (zh) | 内壁和基板处理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180420 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20190201 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6574656 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |