JP2016127115A5 - - Google Patents

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JP2016127115A5
JP2016127115A5 JP2014266139A JP2014266139A JP2016127115A5 JP 2016127115 A5 JP2016127115 A5 JP 2016127115A5 JP 2014266139 A JP2014266139 A JP 2014266139A JP 2014266139 A JP2014266139 A JP 2014266139A JP 2016127115 A5 JP2016127115 A5 JP 2016127115A5
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adhesive sheet
semiconductor chips
pressure
sensitive adhesive
interval
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JP2014266139A
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JP2016127115A (en
JP6482865B2 (en
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Priority to JP2014266139A priority Critical patent/JP6482865B2/en
Priority claimed from JP2014266139A external-priority patent/JP6482865B2/en
Priority to TW104143853A priority patent/TWI676210B/en
Publication of JP2016127115A publication Critical patent/JP2016127115A/en
Publication of JP2016127115A5 publication Critical patent/JP2016127115A5/ja
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Description

本発明の一態様によれば、第一の粘着シートに貼付されたウエハをダイシングにより個片化し、複数の半導体チップを形成する工程と、前記第一の粘着シートを引き延ばして、前記複数の半導体チップ同士の間隔を拡げる工程と、前記複数の半導体チップを、第二の粘着シートに転写する工程と、前記第一の粘着シートを剥離する工程と、前記第二の粘着シートを引き延ばして、前記複数の半導体チップ同士の間隔をさらに拡げる工程と、を備える、半導体装置の製造方法を提供できる。 According to one aspect of the present invention, the step of dicing the wafer attached to the first pressure-sensitive adhesive sheet to form a plurality of semiconductor chips, and extending the first pressure-sensitive adhesive sheet, the plurality of semiconductors stretching a step of widening the interval between chips, the plurality of semiconductor chips, a step of transferring the second tacky Chakushi over preparative, a step of peeling the first adhesive sheet, the second adhesive sheet And a step of further widening the interval between the plurality of semiconductor chips.

本発明の一態様において、前記第二の粘着シートを引き延ばして、前記複数の半導体チップ同士の間隔を拡げた後、前記複数の半導体チップの回路面を残して封止部材で覆う工程をさらに備えることも好ましい。
この態様によれば、半導体チップの取り扱い性を低下させることなく複数の半導体チップ間の間隔を大きく拡げたうえで、封止部材で複数の半導体チップを覆うことができる。しかも、この態様によれば、個片化された半導体チップを、1個ずつ第一の粘着シートから別の粘着シートや支持体にピック・アンド・プレイスによって再配列することなく、封止部材で覆うことができる。それゆ、この態様によれば、WLPの製造プロセスの工程を簡略化することができる。
1 aspect of this invention WHEREIN: After extending said 2nd adhesive sheet and expanding the space | interval of these semiconductor chips, it further includes the process of leaving the circuit surface of these semiconductor chips, and covering with a sealing member. It is also preferable.
According to this aspect, it is possible to cover the plurality of semiconductor chips with the sealing member after greatly increasing the interval between the plurality of semiconductor chips without reducing the handling of the semiconductor chips. Moreover, according to this aspect, the separated semiconductor chips can be sealed one by one with the sealing member without being rearranged by pick and place from the first adhesive sheet to another adhesive sheet or support. Can be covered. Soreyu example, according to this embodiment, it is possible to simplify the manufacturing process step of the WLP.

[第一のエキスパンド工程]
図1(C)には、複数の半導体チップCPを保持する第一の粘着シート10を引き延ばす工程(第一のエキスパンド工程と称する場合がある。)を説明する図が示されている。
ダイシングにより複数の半導体チップCPに個片化した後、第一の粘着シート10を引き延ばして、複数の半導体チップCP間の間隔を拡げる。第一のエキスパンド工程において第一の粘着シート10を引き延ばす方法は、特に限定されない。第一の粘着シート10を引き延ばす方法としては、例えば、環状または円状のエキスパンダを押し当てて第一の粘着シート10を引き延ばす方法や、把持部材などを用いて第一の粘着シート10の外周部を掴んで引き延ばす方法などが挙げられる。
[First expanding process]
FIG. 1C shows a diagram illustrating a process of extending the first adhesive sheet 10 that holds a plurality of semiconductor chips CP (sometimes referred to as a first expanding process).
After dicing into several semiconductor chips CP by dicing, the 1st adhesive sheet 10 is extended and the space | interval between several semiconductor chips CP is expanded. The method for extending the first pressure-sensitive adhesive sheet 10 in the first expanding step is not particularly limited. Examples of the method of stretching the first pressure-sensitive adhesive sheet 10 include a method of stretching the first pressure-sensitive adhesive sheet 10 by pressing an annular or circular expander, and an outer periphery of the first pressure-sensitive adhesive sheet 10 using a gripping member or the like. For example, a method of grasping and extending the part.

Claims (1)

第一の粘着シートに貼付されたウエハをダイシングにより個片化し、複数の半導体チップを形成する工程と、
前記第一の粘着シートを引き延ばして、前記複数の半導体チップ同士の間隔を拡げる工程と、
前記複数の半導体チップを、第二の粘着シートに転写する工程と、
前記第一の粘着シートを剥離する工程と、
前記第二の粘着シートを引き延ばして、前記複数の半導体チップ同士の間隔をさらに拡げる工程と、を備える、半導体装置の製造方法。
Separating the wafer affixed to the first pressure-sensitive adhesive sheet by dicing and forming a plurality of semiconductor chips;
Extending the first pressure-sensitive adhesive sheet and widening the interval between the plurality of semiconductor chips; and
Said plurality of semiconductor chips, a step of transferring the second tacky Chakushi over preparative,
Peeling the first pressure-sensitive adhesive sheet;
Extending the second pressure-sensitive adhesive sheet to further increase the interval between the plurality of semiconductor chips.
JP2014266139A 2014-12-26 2014-12-26 Manufacturing method of semiconductor device Active JP6482865B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014266139A JP6482865B2 (en) 2014-12-26 2014-12-26 Manufacturing method of semiconductor device
TW104143853A TWI676210B (en) 2014-12-26 2015-12-25 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014266139A JP6482865B2 (en) 2014-12-26 2014-12-26 Manufacturing method of semiconductor device

Publications (3)

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JP2016127115A JP2016127115A (en) 2016-07-11
JP2016127115A5 true JP2016127115A5 (en) 2017-11-16
JP6482865B2 JP6482865B2 (en) 2019-03-13

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JP (1) JP6482865B2 (en)
TW (1) TWI676210B (en)

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KR102571926B1 (en) * 2017-05-22 2023-08-28 가부시끼가이샤 레조낙 Semiconductor device manufacturing method and expand tape
JP2019012714A (en) * 2017-06-29 2019-01-24 株式会社ディスコ Manufacturing method of semiconductor package
CN111295739B (en) * 2017-11-16 2023-08-25 琳得科株式会社 Method for manufacturing semiconductor device
KR102515684B1 (en) * 2017-11-16 2023-03-30 린텍 가부시키가이샤 Manufacturing method of semiconductor device
TWI785161B (en) * 2017-12-07 2022-12-01 日商琳得科股份有限公司 Adhesive laminate, method of using adhesive laminate, and method of manufacturing semiconductor device
JP7084228B2 (en) * 2018-06-26 2022-06-14 日東電工株式会社 Semiconductor device manufacturing method
JP7250468B6 (en) * 2018-10-12 2023-04-25 三井化学株式会社 Electronic device manufacturing method and adhesive film
KR102123419B1 (en) * 2018-10-29 2020-06-17 한국기계연구원 Sheet for controlling gap between device and method of controlling gap between device using the same
KR20210123318A (en) * 2019-01-31 2021-10-13 린텍 가부시키가이샤 Expand method and semiconductor device manufacturing method

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WO2010058646A1 (en) * 2008-11-21 2010-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーション Semiconductor package and method for manufacturing same
JP2011077235A (en) * 2009-09-30 2011-04-14 Nitto Denko Corp Pressure-sensitive adhesive sheet for retaining element, and method of manufacturing element
JP5350980B2 (en) * 2009-11-02 2013-11-27 シチズン電子株式会社 LED element manufacturing method
JP5460374B2 (en) * 2010-02-19 2014-04-02 シチズン電子株式会社 Manufacturing method of semiconductor device
WO2014002535A1 (en) * 2012-06-29 2014-01-03 シャープ株式会社 Semiconductor device manufacturing method

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