JP2015144197A5 - - Google Patents
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- Publication number
- JP2015144197A5 JP2015144197A5 JP2014016990A JP2014016990A JP2015144197A5 JP 2015144197 A5 JP2015144197 A5 JP 2015144197A5 JP 2014016990 A JP2014016990 A JP 2014016990A JP 2014016990 A JP2014016990 A JP 2014016990A JP 2015144197 A5 JP2015144197 A5 JP 2015144197A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- support substrate
- adhesive
- scribe line
- extending
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 4
- 239000000853 adhesive Substances 0.000 claims 3
- 230000001070 adhesive Effects 0.000 claims 3
- 230000000149 penetrating Effects 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 238000007598 dipping method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000002093 peripheral Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000000638 solvent extraction Methods 0.000 claims 1
Claims (2)
前記支持基板に貼り付けられたウェーハを薄くする工程と、
第１の方向とこれと交差する第２の方向にそれぞれ複数延在し、チップの領域を区画するスクライブラインであって、前記ウェーハの外周部に位置する領域を除く前記スクライブラインの前記第１の方向のみに前記スクライブラインに沿って延伸し、前記ウェーハの外周部が連結して残されるパターンを有する前記ウェーハを貫通する溝を形成する工程と、
前記支持基板に貼り付けられた前記ウェーハを溶剤に浸漬し、前記溝から浸透する前記溶剤により前記接着剤を除去する工程と、を有する半導体装置の製造方法。 Attaching a support substrate to the first surface of the wafer using an adhesive;
Thinning the wafer attached to the support substrate;
A plurality of scribe lines each extending in a first direction and a second direction intersecting with the first direction and partitioning a chip region, wherein the first scribe line excluding a region located on an outer peripheral portion of the wafer Extending along the scribe line only in the direction of, and forming a groove penetrating the wafer having a pattern in which the outer periphery of the wafer is connected and left ; and
Dipping the wafer attached to the support substrate in a solvent, and removing the adhesive with the solvent penetrating from the groove.
前記ウェーハの前記第１面とは反対側の第２面に支持部材を固定し、前記ウェーハを前記支持基板から取り外す工程と、
前記第１の方向と交叉する第２の方向に延びる第２スクライブラインに沿って前記ウェーハを切断する工程と、を有する請求項１に記載の半導体装置の製造方法。 After the step of removing the adhesive,
Fixing a support member to a second surface opposite to the first surface of the wafer, and removing the wafer from the support substrate;
The method of manufacturing a semiconductor device according to claim 1, further comprising: cutting the wafer along a second scribe line extending in a second direction intersecting with the first direction.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014016990A JP6324743B2 (en) | 2014-01-31 | 2014-01-31 | Manufacturing method of semiconductor device |
| US14/608,879 US9368405B2 (en) | 2014-01-31 | 2015-01-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014016990A JP6324743B2 (en) | 2014-01-31 | 2014-01-31 | Manufacturing method of semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017120799A Division JP6384934B2 (en) | 2017-06-20 | 2017-06-20 | Manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015144197A JP2015144197A (en) | 2015-08-06 |
| JP2015144197A5 true JP2015144197A5 (en) | 2017-03-09 |
| JP6324743B2 JP6324743B2 (en) | 2018-05-16 |
Family
ID=53755460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014016990A Active JP6324743B2 (en) | 2014-01-31 | 2014-01-31 | Manufacturing method of semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9368405B2 (en) |
| JP (1) | JP6324743B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017157679A (en) * | 2016-03-01 | 2017-09-07 | 株式会社ディスコ | Manufacturing method of package wafer and package water |
| DE102016109693B4 (en) * | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Process for separating semiconductor dies from a semiconductor substrate and semiconductor substrate arrangement |
| US9905466B2 (en) * | 2016-06-28 | 2018-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer partitioning method and device formed |
| DE102016122637A1 (en) * | 2016-11-23 | 2018-05-24 | Infineon Technologies Ag | Method of use in the manufacture of semiconductor devices |
| JP6906205B2 (en) * | 2017-08-01 | 2021-07-21 | 株式会社サイオクス | Manufacturing method of semiconductor laminate and manufacturing method of nitride crystal substrate |
| CN107649785A (en) * | 2017-09-22 | 2018-02-02 | 北京世纪金光半导体有限公司 | A kind of wafer thining method and device |
| US20200251516A1 (en) * | 2017-10-26 | 2020-08-06 | Sony Semiconductor Solutions Corporation | Semiconductor device, solid-state image sensor, manufacturing method, and electronic device |
| JP7066263B2 (en) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | Machining method, etching equipment, and laser processing equipment |
| WO2020189526A1 (en) * | 2019-03-15 | 2020-09-24 | デンカ株式会社 | Nitride ceramic substrate production method and nitride ceramic base material |
| JP7459490B2 (en) * | 2019-11-28 | 2024-04-02 | 株式会社ソシオネクスト | Semiconductor wafers and semiconductor devices |
| US20210296176A1 (en) * | 2020-03-23 | 2021-09-23 | Semiconductor Components Industries, Llc | Structure and method for electronic die singulation using alignment structures and multi-step singulation |
| US11764096B2 (en) * | 2020-07-08 | 2023-09-19 | Micron Technology, Inc. | Method for semiconductor die edge protection and semiconductor die separation |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01225510A (en) * | 1988-03-04 | 1989-09-08 | Sumitomo Electric Ind Ltd | Cutting and dividing method for semiconductor base |
| JP2829064B2 (en) | 1989-11-27 | 1998-11-25 | 株式会社ジャパンエナジー | Method for manufacturing semiconductor device |
| JPH091542A (en) * | 1995-06-23 | 1997-01-07 | Matsushita Electron Corp | Cutting method for thin plate-like raw material |
| JP3328167B2 (en) * | 1997-07-03 | 2002-09-24 | 日本電気株式会社 | Manufacturing method of semiconductor wafer |
| JP2002025948A (en) | 2000-07-10 | 2002-01-25 | Canon Inc | Dividing method of wafer, semiconductor device and manufacturing method thereof |
| JP4271409B2 (en) * | 2002-05-22 | 2009-06-03 | リンテック株式会社 | Processing method for brittle materials |
| JP2004146487A (en) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| US6869894B2 (en) * | 2002-12-20 | 2005-03-22 | General Chemical Corporation | Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing |
| JP4529691B2 (en) * | 2005-01-07 | 2010-08-25 | セイコーエプソン株式会社 | Substrate dividing method and liquid jet head manufacturing method |
| US20100200957A1 (en) * | 2009-02-06 | 2010-08-12 | Qualcomm Incorporated | Scribe-Line Through Silicon Vias |
| US8697542B2 (en) * | 2012-04-12 | 2014-04-15 | The Research Foundation Of State University Of New York | Method for thin die-to-wafer bonding |
| US8536709B1 (en) * | 2012-06-25 | 2013-09-17 | United Microelectronics Corp. | Wafer with eutectic bonding carrier and method of manufacturing the same |
-
2014
- 2014-01-31 JP JP2014016990A patent/JP6324743B2/en active Active
-
2015
- 2015-01-29 US US14/608,879 patent/US9368405B2/en active Active
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