JP2016066709A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2016066709A JP2016066709A JP2014194836A JP2014194836A JP2016066709A JP 2016066709 A JP2016066709 A JP 2016066709A JP 2014194836 A JP2014194836 A JP 2014194836A JP 2014194836 A JP2014194836 A JP 2014194836A JP 2016066709 A JP2016066709 A JP 2016066709A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 199
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 77
- 238000005530 etching Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000012447 hatching Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
図1は、第1の実施形態における太陽電池の模式的平面図である。
以下、図6〜図14を参照して、本実施形態の太陽電池1の製造方法について説明する。なお、図7〜図14は、それぞれの製造工程を示す図であって、(a)は、図1に示すI−I線に沿う断面の一部を拡大して示す模式的断面図であり、(b)は、図1に示すII−II線に沿う部分に対応する断面を示す模式的断面図であり、(c)は、図1に示すIII−III線に沿う部分に対応する断面を示す模式的断面図である。
2…半導体基板
2a…主面
3…第1の半導体層
3i…i型非晶質半導体膜
3n…n型非晶質半導体膜
4…絶縁層
5…第2の半導体層
5i…i型非晶質半導体膜
5p…p型非晶質半導体膜
6…n側電極
6a…第1の電極層
6b…第2の電極層
6A…n側バスバー
6B…n側フィンガー
7…p側電極
7a…第1の電極層
7b…第2の電極層
7A…p側バスバー
7B…p側フィンガー
14…レジストパターン
15…レジストパターン
Claims (4)
- 主面を有する一導電型の半導体基板と、
前記半導体基板の前記主面上に形成される一導電型の第1の半導体層と、
前記半導体基板の前記主面上に形成される他導電型の第2の半導体層と、
前記第1の半導体層と前記第2の半導体層とが重なる領域において、前記第1の半導体層と前記第2の半導体層との間に設けられる絶縁層とを備え、
前記第1の半導体層が前記半導体基板と接合する第1の領域と、
前記第2の半導体層が前記半導体基板と接合する第2の領域と、
前記絶縁層が設けられる第3の領域とを有し、
前記第1の領域が、所定方向に延びる複数の第1のフィンガー部と、前記複数の第1のフィンガー部の一方端を接続する第1のバスバー部とを有し、
前記第2の領域が、前記所定方向に延びる複数の第2のフィンガー部と、前記複数の第2のフィンガー部の一方端を接続する第2のバスバー部とを有し、
前記第1のフィンガー部及び前記第2のフィンガー部が互いに間挿し合っており、
前記第3の領域が、前記第1のフィンガー部において前記第1の半導体層と前記第2の半導体層とが重なる前記領域に位置するとともに、前記第1のバスバー部に位置する、太陽電池。 - 一導電型がn型であり、他導電型がp型である、請求項1に記載の太陽電池。
- 前記第1の半導体層が、前記半導体基板の前記主面上に形成される第1の真性半導体膜と、前記第1の真性半導体膜の上に形成される一導電型の第1の半導体膜の積層構造を有し、前記第2の半導体層が、前記半導体基板の前記主面上に形成される第2の真性半導体膜と、前記第2の真性半導体膜の上に形成される他導電型の第2の半導体膜の積層構造を有する、請求項1または2に記載の太陽電池。
- 前記第1の半導体層及び前記第2の半導体層はアモルファスシリコンを含み、
前記絶縁層は窒化ケイ素を含む、請求項1〜3のいずれか一項に記載の太陽電池。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014194836A JP2016066709A (ja) | 2014-09-25 | 2014-09-25 | 太陽電池 |
DE102015218244.4A DE102015218244A1 (de) | 2014-09-25 | 2015-09-23 | Solarzelle |
US14/863,579 US20160093754A1 (en) | 2014-09-25 | 2015-09-24 | Solar cell |
JP2018182671A JP6906195B2 (ja) | 2014-09-25 | 2018-09-27 | 太陽電池 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2014194836A JP2016066709A (ja) | 2014-09-25 | 2014-09-25 | 太陽電池 |
Related Child Applications (1)
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JP2018182671A Division JP6906195B2 (ja) | 2014-09-25 | 2018-09-27 | 太陽電池 |
Publications (1)
Publication Number | Publication Date |
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JP2016066709A true JP2016066709A (ja) | 2016-04-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014194836A Pending JP2016066709A (ja) | 2014-09-25 | 2014-09-25 | 太陽電池 |
Country Status (3)
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US (1) | US20160093754A1 (ja) |
JP (1) | JP2016066709A (ja) |
DE (1) | DE102015218244A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020149128A1 (ja) * | 2019-01-18 | 2020-07-23 | 株式会社カネカ | 太陽電池の製造方法 |
WO2020218000A1 (ja) * | 2019-04-23 | 2020-10-29 | 株式会社カネカ | 太陽電池および太陽電池の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019008955A1 (ja) * | 2017-07-03 | 2019-01-10 | 株式会社カネカ | 太陽電池および太陽電池モジュール |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010522976A (ja) * | 2007-03-28 | 2010-07-08 | コミツサリア タ レネルジー アトミーク | 互いに噛み合う不連続のヘテロ接合構造を有する光起電装置 |
JP2012033810A (ja) * | 2010-08-02 | 2012-02-16 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
JP2013030615A (ja) * | 2011-07-28 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
JP2013211392A (ja) * | 2012-03-30 | 2013-10-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US20140034119A1 (en) * | 2012-08-02 | 2014-02-06 | Samsung Sdi Co., Ltd. | Photoelectric device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
WO2012132655A1 (ja) | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
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2014
- 2014-09-25 JP JP2014194836A patent/JP2016066709A/ja active Pending
-
2015
- 2015-09-23 DE DE102015218244.4A patent/DE102015218244A1/de active Pending
- 2015-09-24 US US14/863,579 patent/US20160093754A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010522976A (ja) * | 2007-03-28 | 2010-07-08 | コミツサリア タ レネルジー アトミーク | 互いに噛み合う不連続のヘテロ接合構造を有する光起電装置 |
JP2012033810A (ja) * | 2010-08-02 | 2012-02-16 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
JP2013030615A (ja) * | 2011-07-28 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
JP2013211392A (ja) * | 2012-03-30 | 2013-10-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US20140034119A1 (en) * | 2012-08-02 | 2014-02-06 | Samsung Sdi Co., Ltd. | Photoelectric device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020149128A1 (ja) * | 2019-01-18 | 2020-07-23 | 株式会社カネカ | 太陽電池の製造方法 |
JPWO2020149128A1 (ja) * | 2019-01-18 | 2021-09-30 | 株式会社カネカ | 太陽電池の製造方法 |
JP7101264B2 (ja) | 2019-01-18 | 2022-07-14 | 株式会社カネカ | 太陽電池の製造方法 |
WO2020218000A1 (ja) * | 2019-04-23 | 2020-10-29 | 株式会社カネカ | 太陽電池および太陽電池の製造方法 |
JPWO2020218000A1 (ja) * | 2019-04-23 | 2021-11-25 | 株式会社カネカ | 太陽電池および太陽電池の製造方法 |
JP7202456B2 (ja) | 2019-04-23 | 2023-01-11 | 株式会社カネカ | 太陽電池および太陽電池の製造方法 |
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DE102015218244A1 (de) | 2016-03-31 |
US20160093754A1 (en) | 2016-03-31 |
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