JP2016048256A - 3軸磁場センサー - Google Patents
3軸磁場センサー Download PDFInfo
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- JP2016048256A JP2016048256A JP2015233282A JP2015233282A JP2016048256A JP 2016048256 A JP2016048256 A JP 2016048256A JP 2015233282 A JP2015233282 A JP 2015233282A JP 2015233282 A JP2015233282 A JP 2015233282A JP 2016048256 A JP2016048256 A JP 2016048256A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 163
- 230000004907 flux Effects 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 23
- 230000005415 magnetization Effects 0.000 claims description 49
- 230000004044 response Effects 0.000 claims description 13
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 24
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- 239000000758 substrate Substances 0.000 abstract description 10
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- 239000010410 layer Substances 0.000 description 116
- 230000008569 process Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 10
- 230000005294 ferromagnetic effect Effects 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 230000005290 antiferromagnetic effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
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- 238000010438 heat treatment Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
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- 238000004088 simulation Methods 0.000 description 3
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- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
以下では、本発明の実施形態が以下の図面と関連付けて説明され、図面において同様の参照符号は同様の要素を表わす。
Claims (12)
- 磁場センサーであって、
第1の磁気抵抗センサー、第2の磁気抵抗センサー、第3の磁気抵抗センサー、および第4の磁気抵抗センサーを含む第1のブリッジ回路であって、該第1、第2、第3及び第4の磁気抵抗センサーは、該第1、第2、第3及び第4の磁気抵抗センサーの平面に直交する第1の方向における磁場を検知するホイートストンブリッジとして結合されている、前記第1のブリッジ回路を備え、
前記第1の磁気抵抗センサーは、
第1の端部および第2の端部を有する第1の検知素子と、
前記第1の検知素子の第1の端部と直交し、かつ該第1の端部から離間して配置された第1の磁束ガイドとを含み、
前記第2の磁気抵抗センサーは、
第1の端部および第2の端部を有する第2の検知素子と、
前記第2の検知素子の第2の端部と直交し、かつ該第2の端部から離間して配置された第2の磁束ガイドとを含み、
前記第3の磁気抵抗センサーは、
第1の端部および第2の端部を有する第3の検知素子と、
前記第3の検知素子の第1の端部と直交し、かつ該第1の端部から離間して配置された第3の磁束ガイドとを含み、
前記第4の磁気抵抗センサーは、
第1の端部および第2の端部を有する第4の検知素子と、
前記第4の検知素子の第2の端部と直交し、かつ該第2の端部から離間して配置された第4の磁束ガイドとを含む、磁場センサー。 - 前記第1、第2、第3、及び第4の磁束ガイドのうちの少なくとも一つは、高透磁性材料を含む、請求項1に記載の磁場センサー。
- 前記高透磁性材料は、ニッケル鉄を含む、請求項2に記載の磁場センサー。
- 前記第1の磁束ガイド、前記第2の磁束ガイド、前記第3の磁束ガイド、及び前記第4の磁束ガイドのうちの一つ以上のガイドは、前記第1の検知素子、前記第2の検知素子、前記第3の検知素子、及び前記第4の検知素子の下方にそれぞれ配置されている、請求項1に記載の磁場センサー。
- 前記第1の磁束ガイド、前記第2の磁束ガイド、前記第3の磁束ガイド、及び前記第4の磁束ガイドのうちの一つ以上のガイドは、前記第1の検知素子、前記第2の検知素子、前記第3の検知素子、及び前記第4の検知素子の上方にそれぞれ配置されている、請求項1に記載の磁場センサー。
- 前記第1の磁気抵抗センサーは、
前記第1の検知素子の第2の端部と直交し、かつ該第2の端部から離間して配置された第5の磁束ガイドをさらに含み、
前記第2の磁気抵抗センサーは、
前記第2の検知素子の第1の端部と直交し、かつ該第1の端部から離間して配置された第6の磁束ガイドをさらに含み、
前記第3の磁気抵抗センサーは、
前記第3の検知素子の第2の端部と直交し、かつ該第2の端部から離間して配置された第7の磁束ガイドをさらに含み、
前記第4の磁気抵抗センサーは、
前記第4の検知素子の第1の端部と直交し、かつ該第1の端部から離間して配置された第8の磁束ガイドをさらに含む、請求項1に記載の磁場センサー。 - 前記第1の方向にける磁場は、前記第1の方向と直交する第2の方向に沿って前記第1の検知素子および前記第2の検知素子において非対称応答を生成する、請求項1に記載の磁場センサー。
- 前記第1の検知素子は、第1のピン止め層を含み、前記第2の検知素子は、第2のピン止め層を含み、前記第1及び第2のピン止め層の各々は、ピン止め方向を含み、
前記第1方向における磁場の検出に応答して、前記第1の検知素子の磁化は、前記第1のピン止め層のピン止め方向から離れるように回転し、前記第2の検知素子の磁化は、前記第2のピン止め層のピン止め方向に向かって回転する、請求項1に記載の磁場センサー。 - 前記第1方向における磁場の検出に応答して、前記第1の検知素子の磁化は、第1のピン止め層のより高い抵抗に回転し、前記第2の検知素子の磁化は、第2のピン止め層のより低い抵抗に回転する、請求項1に記載の磁場センサー。
- 前記第2の方向にける磁場は、前記第2の方向に沿って前記第1の検知素子および前記第2の検知素子において対称応答を生成する、請求項7に記載の磁場センサー。
- 前記第1および第2の磁気抵抗センサーは、ホイートストンブリッジにおいて、動作時に前記第2の方向における磁場応答を排除するように接続されている、請求項7に記載の磁場センサー。
- 前記第1および第2の磁気抵抗センサーは、ホイートストンブリッジにおいて、動作時に前記第1の方向における磁場応答を倍増するように接続されている、請求項7に記載の磁場センサー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/567,496 | 2009-09-25 | ||
US12/567,496 US8390283B2 (en) | 2009-09-25 | 2009-09-25 | Three axis magnetic field sensor |
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JP2012531101A Division JP6089272B2 (ja) | 2009-09-25 | 2010-09-27 | 3軸磁場センサー |
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JP2016048256A true JP2016048256A (ja) | 2016-04-07 |
JP6127333B2 JP6127333B2 (ja) | 2017-05-17 |
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JP2015233282A Active JP6127333B2 (ja) | 2009-09-25 | 2015-11-30 | 3軸磁場センサー |
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Country Status (8)
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US (4) | US8390283B2 (ja) |
JP (2) | JP6089272B2 (ja) |
KR (1) | KR101849516B1 (ja) |
CN (1) | CN102292773B (ja) |
DE (1) | DE112010003775B4 (ja) |
SM (1) | SMP201100062B (ja) |
TW (2) | TWI497097B (ja) |
WO (1) | WO2011038343A1 (ja) |
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KR20200112914A (ko) * | 2018-03-01 | 2020-10-05 | 요코가와 덴키 가부시키가이샤 | 전류 측정 장치, 전류 측정 방법, 및 컴퓨터 판독 가능한 비일시적 기록 매체 |
KR102412180B1 (ko) | 2018-03-01 | 2022-06-22 | 요코가와 덴키 가부시키가이샤 | 전류 측정 장치, 전류 측정 방법, 및 컴퓨터 판독 가능한 비일시적 기록 매체 |
JP2021143919A (ja) * | 2020-03-11 | 2021-09-24 | 株式会社東芝 | 磁気センサ及び診断装置 |
JP7292234B2 (ja) | 2020-03-11 | 2023-06-16 | 株式会社東芝 | 磁気センサ及び診断装置 |
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US20110074406A1 (en) | 2011-03-31 |
SMP201100062B (it) | 2012-09-07 |
TW201541109A (zh) | 2015-11-01 |
USRE46428E1 (en) | 2017-06-06 |
DE112010003775T5 (de) | 2012-10-11 |
CN102292773B (zh) | 2015-11-25 |
SMAP201100062A (it) | 2012-01-18 |
JP2013506141A (ja) | 2013-02-21 |
USRE49404E1 (en) | 2023-01-31 |
JP6089272B2 (ja) | 2017-03-08 |
WO2011038343A1 (en) | 2011-03-31 |
TWI591361B (zh) | 2017-07-11 |
US8390283B2 (en) | 2013-03-05 |
USRE46180E1 (en) | 2016-10-18 |
JP6127333B2 (ja) | 2017-05-17 |
TW201133016A (en) | 2011-10-01 |
CN102292773A (zh) | 2011-12-21 |
DE112010003775B4 (de) | 2021-11-25 |
KR20120066612A (ko) | 2012-06-22 |
KR101849516B1 (ko) | 2018-04-17 |
TWI497097B (zh) | 2015-08-21 |
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