JP2016039370A - 熱伝導体、熱伝導体を備える半導体装置とその製造方法 - Google Patents
熱伝導体、熱伝導体を備える半導体装置とその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 200
- 239000004020 conductor Substances 0.000 title claims description 27
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- 239000012530 fluid Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 150000004767 nitrides Chemical group 0.000 claims description 4
- 239000002470 thermal conductor Substances 0.000 claims 4
- 230000004888 barrier function Effects 0.000 abstract description 14
- 238000012546 transfer Methods 0.000 abstract description 13
- 238000012986 modification Methods 0.000 description 21
- 230000004048 modification Effects 0.000 description 21
- 238000001816 cooling Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000005484 gravity Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
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- 238000002347 injection Methods 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
Abstract
Description
以下、図面を参照し、図2に示される半導体装置3の製造方法を説明する。
以下、図面を参照し、図7に示される半導体装置103の製造方法を説明する。
Claims (16)
- 熱伝導体であって、
発熱体を支持する支持層を備え、
前記支持層は、作動液が封入される流路を含んでおり、
前記流路は、前記支持層の厚み方向に沿って伸びる、熱伝導体。 - 前記支持層の材料が、半導体である、請求項1に記載の熱伝導体。
- 前記流路は、前記支持層の厚み方向に往復する往復流路を有する、請求項1又は2に記載の熱伝導体。
- 前記流路は、前記支持層の厚み方向に沿って伸びる複数の直線流路を有する、請求項1又は2に記載の熱伝導体。
- 前記直線流路は、前記発熱体側に向けて先細りに構成されている、請求項4に記載の熱伝導体。
- 前記直線流路の内壁面にウィック構造が設けられている、請求項4又は5に記載の熱伝導体。
- 半導体装置であって、
請求項1〜6のいずれか一項に記載の熱伝導体と、
前記熱伝導体の前記支持層上に設けられており、半導体素子を構成する半導体領域が形成されている半導体層と、を備え、
前記半導体素子が、前記発熱体である、半導体装置。 - 前記半導体層の上面に接触しており、一方向に沿って伸びるソース電極と、
前記半導体層の前記上面に接触しており、前記一方向に沿って伸びるドレイン電極と、
前記半導体層上に設けられており、前記ソース電極と前記ドレイン電極の間に配置されており、前記一方向に沿って伸びるゲート電極と、をさらに備え、
前記流路は、前記半導体層の前記上面に直交する方向から観測したときに、前記ソース電極、前記ドレイン電極及び前記ゲート電極の存在範囲に対応して選択的に配置されている、請求項7に記載の半導体装置。 - 前記流路は、前記半導体層の前記上面に直交する方向から観測したときに、前記ゲート電極の存在範囲に対応して選択的に配置されている、請求項8に記載の半導体装置。
- 前記支持層の材料が、シリコンであり、
前記半導体層の材料が、窒化物半導体である、請求項7〜9のいずれか一項に記載の半導体装置。 - モジュールであって、
請求項1〜6のいずれか一項に記載の熱伝導体と、
前記熱伝導体の前記支持層下に設けられており、前記支持層の前記流路に連通する連通路を含む金属の放熱板と、を備えるモジュール。 - 半導体モジュールであって、
請求項7〜10のいずれか一項に記載の半導体装置と、
前記熱伝導体の前記支持層下に設けられており、前記支持層の前記流路に連通する連通路を含む金属の放熱板と、を備える半導体モジュール。 - 半導体装置の製造方法であって、
支持層上に半導体層を結晶成長させる工程と、
前記半導体層に半導体素子を構成する半導体領域を形成する工程と、
前記支持層を加工して流路を形成する工程と、
前記流路内に作動液を封入する工程と、を備え、
前記流路は、前記支持層の厚み方向に沿って伸びる、製造方法。 - 前記支持層の材料が、半導体である、請求項13に記載の製造方法。
- 前記流路は、前記支持層の厚み方向に往復する往復流路を有する、請求項13又は14に記載の熱伝導体。
- 前記流路は、前記支持層の厚み方向に沿って伸びる複数の直線流路を有する、請求項13又は14に記載の熱伝導体。
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JP2015145787A JP6191660B2 (ja) | 2014-08-05 | 2015-07-23 | 熱伝導体、熱伝導体を備える半導体装置 |
US14/811,965 US9536996B2 (en) | 2014-08-05 | 2015-07-29 | Apparatus and method of manufacturing a support layer |
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JP2015145787A JP6191660B2 (ja) | 2014-08-05 | 2015-07-23 | 熱伝導体、熱伝導体を備える半導体装置 |
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JP2016039370A true JP2016039370A (ja) | 2016-03-22 |
JP6191660B2 JP6191660B2 (ja) | 2017-09-06 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019533903A (ja) * | 2016-10-17 | 2019-11-21 | ツェットエフ、フリードリッヒスハーフェン、アクチエンゲゼルシャフトZf Friedrichshafen Ag | 放熱装置及びそれを製造する方法 |
JP2021132167A (ja) * | 2020-02-21 | 2021-09-09 | 富士電機株式会社 | 沸騰冷却器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102016218522B3 (de) * | 2016-09-27 | 2017-06-22 | Jenoptik Laser Gmbh | Optische oder optoelektronische Baugruppe und Verfahren zur Herstellung dafür |
DE102016218968A1 (de) * | 2016-09-30 | 2018-04-05 | Siemens Aktiengesellschaft | Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls |
US11769709B2 (en) * | 2016-12-02 | 2023-09-26 | ThermAvant Technologies, LLC | Integrated circuit with integrally formed micro-channel oscillating heat pipe |
KR102639555B1 (ko) | 2017-01-13 | 2024-02-23 | 삼성전자주식회사 | 열분산유닛을 가지는 전자파 차폐구조 및 그 제조방법 |
CN110467741A (zh) | 2018-04-20 | 2019-11-19 | 中科艾玛科技成都有限公司 | 一种亲水超滑的避孕套 |
WO2020110202A1 (ja) * | 2018-11-27 | 2020-06-04 | 東芝三菱電機産業システム株式会社 | 半導体装置 |
CN116806369A (zh) * | 2021-01-11 | 2023-09-26 | 华为技术有限公司 | 多端子氮化镓功率晶体管 |
KR102554272B1 (ko) * | 2023-02-03 | 2023-07-13 | 대한민국(방위사업청장) | 집적회로의 직접 냉각 장치 및 이의 제조 방법 |
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- 2015-07-29 US US14/811,965 patent/US9536996B2/en active Active
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JP2019533903A (ja) * | 2016-10-17 | 2019-11-21 | ツェットエフ、フリードリッヒスハーフェン、アクチエンゲゼルシャフトZf Friedrichshafen Ag | 放熱装置及びそれを製造する方法 |
JP2021132167A (ja) * | 2020-02-21 | 2021-09-09 | 富士電機株式会社 | 沸騰冷却器 |
JP7439559B2 (ja) | 2020-02-21 | 2024-02-28 | 富士電機株式会社 | 沸騰冷却器 |
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JP6191660B2 (ja) | 2017-09-06 |
US9536996B2 (en) | 2017-01-03 |
US20160043066A1 (en) | 2016-02-11 |
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