JP2016039309A - 多層膜をエッチングする方法 - Google Patents
多層膜をエッチングする方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000005530 etching Methods 0.000 title claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 132
- 238000012545 processing Methods 0.000 claims abstract description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011737 fluorine Substances 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 9
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002060 fluorescence correlation spectroscopy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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Abstract
【解決手段】
多層膜は、交互に積層された第1の膜及び第2の膜を含み、第1の膜及び第2の膜は互いに異なる誘電率を有する。多層膜をエッチングする方法は、(a)プラズマ処理装置の処理容器内に、多層膜及び該多層膜上に設けられたマスクを有する被処理体を準備する工程と、(b)多層膜をエッチングする工程であり、水素ガス、フルオロハイドロカーボンガス、フッ素含有ガス、炭化水素ガス、三塩化ホウ素ガス、及び窒素ガスを含む処理ガスを前記処理容器内で励起させる、該工程と、を含む。
【選択図】図1
Description
・H2ガスの流量:50〜300sccm
・CH2F2ガスの流量:40〜80sccm
・NF3ガスの流量:50〜100sccm
・CH4ガスの流量:5〜50sccm
・BCl3ガスの流量:5〜30sccm
・N2ガスの流量:10〜200sccm
・第1の高周波電源62の高周波電力の周波数:27〜100MHz
・第1の高周波電源62の高周波電力:500〜2700W
・第2の高周波電源64の高周波電力の周波数:0.4〜13MHz
・第2の高周波電源64の高周波電力:1000〜4000W
・処理容器12内の圧力:2.66〜13.3Pa(20〜100mT)
・高周波電力のONとOFFの周波数:1〜40kHz
・一周期において高周波電力がONの期間が占めるデューティー比:50〜90%
・高周波電力がONの期間の負の直流電圧の絶対値:150〜500V
・高周波電力がOFFの期間の負の直流電圧の絶対値:350〜1000V
以下、方法MTを用いて行った実験例、及び比較のために行った比較実験例について説明する。
Claims (8)
- 互いに異なる誘電率を有し、且つ、交互に積層された第1の膜及び第2の膜を含む多層膜をエッチングする方法であって、
プラズマ処理装置の処理容器内に、前記多層膜及び該多層膜上に設けられたマスクを有する被処理体を準備する工程と、
前記多層膜をエッチングする工程であり、水素ガス、フルオロハイドロカーボンガス、フッ素含有ガス、炭化水素ガス、三塩化ホウ素ガス、及び窒素ガスを含む処理ガスを前記処理容器内で励起させる、該工程と、
を含む方法。 - 前記フルオロハイドロカーボンガスは、CH2F2ガス、CH3Fガス、又はCHF3ガスである、請求項1に記載の方法。
- 前記フッ素含有ガスは、NF3ガス又はSF6ガスである、請求項1又は2に記載の方法。
- 前記炭化水素ガスは、CH4ガスである、請求項1〜3の何れか一項に記載の方法。
- 前記第1の膜は酸化シリコン膜であり、前記第2の膜は窒化シリコン膜である、請求項1〜4の何れか一項に記載の方法。
- 前記第1の膜は酸化シリコン膜であり、前記第2の膜はポリシリコン膜である、請求項1〜4の何れか一項に記載の方法。
- 前記第1の膜と前記第2の膜は、合計24層以上積層されている、請求項1〜6の何れか一項に記載の方法。
- 前記マスクは、アモルファスカーボン製である、請求項1〜7の何れか一項に記載の方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014162809A JP6454492B2 (ja) | 2014-08-08 | 2014-08-08 | 多層膜をエッチングする方法 |
KR1020150106596A KR101835683B1 (ko) | 2014-08-08 | 2015-07-28 | 다층막을 에칭하는 방법 |
US14/817,393 US9263239B1 (en) | 2014-08-08 | 2015-08-04 | Etching method of multilayered film |
SG10201506214XA SG10201506214XA (en) | 2014-08-08 | 2015-08-06 | Etching method of multilayered film |
CN201510484931.8A CN105374756B (zh) | 2014-08-08 | 2015-08-07 | 多层膜的蚀刻方法 |
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JP2014162809A JP6454492B2 (ja) | 2014-08-08 | 2014-08-08 | 多層膜をエッチングする方法 |
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JP2016039309A true JP2016039309A (ja) | 2016-03-22 |
JP6454492B2 JP6454492B2 (ja) | 2019-01-16 |
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US (1) | US9263239B1 (ja) |
JP (1) | JP6454492B2 (ja) |
KR (1) | KR101835683B1 (ja) |
CN (1) | CN105374756B (ja) |
SG (1) | SG10201506214XA (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019138654A1 (ja) * | 2018-10-26 | 2019-07-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
JP2019145780A (ja) * | 2018-02-15 | 2019-08-29 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
KR20220152139A (ko) | 2021-05-07 | 2022-11-15 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 장치 |
KR20230129310A (ko) | 2022-03-01 | 2023-09-08 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6604911B2 (ja) * | 2016-06-23 | 2019-11-13 | 東京エレクトロン株式会社 | エッチング処理方法 |
JP6948181B2 (ja) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
JP2020068221A (ja) * | 2018-10-22 | 2020-04-30 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
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JP6035117B2 (ja) * | 2012-11-09 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
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2014
- 2014-08-08 JP JP2014162809A patent/JP6454492B2/ja active Active
-
2015
- 2015-07-28 KR KR1020150106596A patent/KR101835683B1/ko active IP Right Grant
- 2015-08-04 US US14/817,393 patent/US9263239B1/en not_active Expired - Fee Related
- 2015-08-06 SG SG10201506214XA patent/SG10201506214XA/en unknown
- 2015-08-07 CN CN201510484931.8A patent/CN105374756B/zh not_active Expired - Fee Related
Patent Citations (8)
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JPS5658972A (en) * | 1979-10-16 | 1981-05-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching method |
JPH0536645A (ja) * | 1991-07-25 | 1993-02-12 | Sony Corp | ドライエツチング方法 |
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WO2014069559A1 (ja) * | 2012-11-01 | 2014-05-08 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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JP2019145780A (ja) * | 2018-02-15 | 2019-08-29 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
JP7158252B2 (ja) | 2018-02-15 | 2022-10-21 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
WO2019138654A1 (ja) * | 2018-10-26 | 2019-07-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
JPWO2019138654A1 (ja) * | 2018-10-26 | 2020-01-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
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KR20230129310A (ko) | 2022-03-01 | 2023-09-08 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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US20160042918A1 (en) | 2016-02-11 |
SG10201506214XA (en) | 2016-03-30 |
KR101835683B1 (ko) | 2018-03-07 |
CN105374756B (zh) | 2019-01-15 |
JP6454492B2 (ja) | 2019-01-16 |
KR20160018366A (ko) | 2016-02-17 |
CN105374756A (zh) | 2016-03-02 |
US9263239B1 (en) | 2016-02-16 |
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