JP2016001739A - トンネル誘電体層を伴う太陽電池の製造方法 - Google Patents
トンネル誘電体層を伴う太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 239000000126 substance Substances 0.000 claims abstract description 17
- 239000012298 atmosphere Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 147
- 238000012545 processing Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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Abstract
Description
本発明は、米国エネルギー省より付託された契約番号DE−FC36−07GO17043の下、連邦政府の支援を受けてなされた発明であり、政府は本発明について一定の権利を有する。
[項目1]
太陽電池の基板の表面に酸化物層を設けるべく、前記基板の前記表面を湿式化学溶液に晒す工程と、
前記酸化物層を前記太陽電池のトンネル誘電体層へと変換するべく、前記酸化物層を略摂氏900度以上の温度で乾燥雰囲気中で加熱する工程とを備える太陽電池の製造方法。
[項目2]
前記酸化物層が、前記製造中に1回だけ略摂氏900度以上の温度に晒される、項目1に記載の太陽電池の製造方法。
[項目3]
前記湿式化学溶液が、オゾン(O 3 )及び過酸化水素(H 2 O 2 )からなる群から選択される酸化剤を含む、項目1または2に記載の太陽電池の製造方法。
[項目4]
前記湿式化学溶液及び前記基板の前記表面が、前記基板の前記表面を湿式化学溶液に晒す工程の間に、可視光放射に露出される項目1から3の何れか一項に記載の太陽電池の製造方法。
[項目5]
前記湿式化学溶液に晒す工程の後であって、前記加熱する工程の前に、前記酸化物層を、摂氏500度未満の温度から略摂氏565度の温度に加熱し、次いで摂氏500度未満の温度に戻すよう冷却する工程を更に備える項目1から4の何れか一項に記載の太陽電池の製造方法。
[項目6]
前記加熱する工程の前に、前記酸化物層の上に材料層を形成する工程を更に備える項目1から5の何れか一項に記載の太陽電池の製造方法。
[項目7]
前記材料層が、アモルファスシリコン層であって、前記アモルファスシリコン層が、前記加熱する工程の間に多結晶シリコン層へと結晶化される項目6に記載の太陽電池の製造方法。
[項目8]
前記多結晶シリコン層の上に金属接点を形成する工程を更に備える項目7に記載の太陽電池の製造方法。
[項目9]
前記基板がバルクシリコン基板であって、前記酸化物層が酸化シリコン層である、項目1から8の何れか一項に記載の太陽電池の製造方法。
[項目10]
熱酸化によって、摂氏600度未満の温度で、太陽電池の基板の表面上に酸化物層を形成する工程と、
前記酸化物層を前記太陽電池のトンネル誘電体層に変換するべく、前記酸化物層を略摂氏900度以上の温度で乾燥雰囲気中で加熱する工程とを備える太陽電池の製造方法。
[項目11]
前記酸化物層が、前記製造中に1回だけ略摂氏900度以上の温度に晒される項目10に記載の太陽電池の製造方法。
[項目12]
前記酸化物層が、低圧熱酸化処理によって形成される項目10または11に記載の太陽電池の製造方法。
[項目13]
前記低圧熱酸化処理が、酸素(O 2 )を含有する雰囲気中で、略摂氏500〜580度の範囲の温度で実施される項目12に記載の太陽電池の製造方法。
[項目14]
前記加熱する工程の前に、前記酸化物層の上に材料層を形成する工程を更に備える項目10から13の何れか一項に記載の太陽電池の製造方法。
[項目15]
前記材料層が、アモルファスシリコン層であって、前記アモルファスシリコン層が、前記加熱する工程の間に多結晶シリコン層へと結晶化される項目14に記載の太陽電池の製造方法。
[項目16]
前記多結晶シリコン層の上に金属接点を形成することを更に含む項目15に記載の太陽電池の製造方法。
[項目17]
前記基板がバルクシリコン基板であって、前記酸化物層が酸化シリコン層である項目10から16の何れか一項に記載の太陽電池の製造方法。
[項目18]
前記酸化物層を形成する工程の後であって、前記加熱する工程の前に、前記酸化物層を摂氏500度未満の温度から略摂氏565度の温度に加熱し、次いで摂氏500度未満の温度に戻すよう冷却する工程を更に備える項目10から17の何れか一項に記載の太陽電池の製造方法。
[項目19]
基板と、
基板上に配設されたトンネル誘電体層とを備え、
前記トンネル誘電体層が、酸化物層を略摂氏900度以上で1回だけ加熱することによって形成される太陽電池。
[項目20]
前記トンネル誘電体層の上に設けられた多結晶シリコン層を更に備える項目19に記載の太陽電池。
[項目21]
前記多結晶シリコン層の上に設けられた金属接点を更に備える項目20に記載の太陽電池。
[項目22]
前記基板がバルクシリコン基板であって、前記トンネル誘電体層が酸化シリコン層である項目19から21の何れか一項に記載の太陽電池。
Claims (22)
- 太陽電池の基板の表面に酸化物層を設けるべく、前記基板の前記表面を湿式化学溶液に晒す工程と、
前記酸化物層を前記太陽電池のトンネル誘電体層へと変換するべく、前記酸化物層を略摂氏900度以上の温度で乾燥雰囲気中で加熱する工程とを備える太陽電池の製造方法。 - 前記酸化物層が、前記製造中に1回だけ略摂氏900度以上の温度に晒される、請求項1に記載の太陽電池の製造方法。
- 前記湿式化学溶液が、オゾン(O3)及び過酸化水素(H2O2)からなる群から選択される酸化剤を含む、請求項1または2に記載の太陽電池の製造方法。
- 前記湿式化学溶液及び前記基板の前記表面が、前記基板の前記表面を湿式化学溶液に晒す工程の間に、可視光放射に露出される請求項1から3の何れか一項に記載の太陽電池の製造方法。
- 前記湿式化学溶液に晒す工程の後であって、前記加熱する工程の前に、前記酸化物層を、摂氏500度未満の温度から略摂氏565度の温度に加熱し、次いで摂氏500度未満の温度に戻すよう冷却する工程を更に備える請求項1から4の何れか一項に記載の太陽電池の製造方法。
- 前記加熱する工程の前に、前記酸化物層の上に材料層を形成する工程を更に備える請求項1から5の何れか一項に記載の太陽電池の製造方法。
- 前記材料層が、アモルファスシリコン層であって、前記アモルファスシリコン層が、前記加熱する工程の間に多結晶シリコン層へと結晶化される請求項6に記載の太陽電池の製造方法。
- 前記多結晶シリコン層の上に金属接点を形成する工程を更に備える請求項7に記載の太陽電池の製造方法。
- 前記基板がバルクシリコン基板であって、前記酸化物層が酸化シリコン層である、請求項1から8の何れか一項に記載の太陽電池の製造方法。
- 熱酸化によって、摂氏600度未満の温度で、太陽電池の基板の表面上に酸化物層を形成する工程と、
前記酸化物層を前記太陽電池のトンネル誘電体層に変換するべく、前記酸化物層を略摂氏900度以上の温度で乾燥雰囲気中で加熱する工程とを備える太陽電池の製造方法。 - 前記酸化物層が、前記製造中に1回だけ略摂氏900度以上の温度に晒される請求項10に記載の太陽電池の製造方法。
- 前記酸化物層が、低圧熱酸化処理によって形成される請求項10または11に記載の太陽電池の製造方法。
- 前記低圧熱酸化処理が、酸素(O2)を含有する雰囲気中で、略摂氏500〜580度の範囲の温度で実施される請求項12に記載の太陽電池の製造方法。
- 前記加熱する工程の前に、前記酸化物層の上に材料層を形成する工程を更に備える請求項10から13の何れか一項に記載の太陽電池の製造方法。
- 前記材料層が、アモルファスシリコン層であって、前記アモルファスシリコン層が、前記加熱する工程の間に多結晶シリコン層へと結晶化される請求項14に記載の太陽電池の製造方法。
- 前記多結晶シリコン層の上に金属接点を形成することを更に含む請求項15に記載の太陽電池の製造方法。
- 前記基板がバルクシリコン基板であって、前記酸化物層が酸化シリコン層である請求項10から16の何れか一項に記載の太陽電池の製造方法。
- 前記酸化物層を形成する工程の後であって、前記加熱する工程の前に、前記酸化物層を摂氏500度未満の温度から略摂氏565度の温度に加熱し、次いで摂氏500度未満の温度に戻すよう冷却する工程を更に備える請求項10から17の何れか一項に記載の太陽電池の製造方法。
- 基板と、
基板上に配設されたトンネル誘電体層とを備え、
前記トンネル誘電体層が、酸化物層を略摂氏900度以上で1回だけ加熱することによって形成される太陽電池。 - 前記トンネル誘電体層の上に設けられた多結晶シリコン層を更に備える請求項19に記載の太陽電池。
- 前記多結晶シリコン層の上に設けられた金属接点を更に備える請求項20に記載の太陽電池。
- 前記基板がバルクシリコン基板であって、前記トンネル誘電体層が酸化シリコン層である請求項19から21の何れか一項に記載の太陽電池。
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JP2012049156A (ja) * | 2010-08-24 | 2012-03-08 | Osaka Univ | 太陽電池およびその製造方法 |
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US20150263200A1 (en) | 2015-09-17 |
KR102100065B1 (ko) | 2020-04-10 |
JP6519820B2 (ja) | 2019-05-29 |
JP5825692B2 (ja) | 2015-12-02 |
KR101758952B1 (ko) | 2017-07-17 |
CN102959731A (zh) | 2013-03-06 |
WO2012003038A3 (en) | 2012-04-12 |
CN102959731B (zh) | 2016-10-19 |
US8709851B2 (en) | 2014-04-29 |
US8334161B2 (en) | 2012-12-18 |
KR20130098191A (ko) | 2013-09-04 |
KR20170040366A (ko) | 2017-04-12 |
WO2012003038A2 (en) | 2012-01-05 |
KR20180014831A (ko) | 2018-02-09 |
US9537030B2 (en) | 2017-01-03 |
US20140134788A1 (en) | 2014-05-15 |
US9112066B2 (en) | 2015-08-18 |
JP2019091919A (ja) | 2019-06-13 |
AU2011271682A1 (en) | 2013-01-17 |
EP2589087A4 (en) | 2017-07-26 |
JP6082060B2 (ja) | 2017-02-15 |
CN106847937A (zh) | 2017-06-13 |
AU2011271682B2 (en) | 2015-08-13 |
US20120000528A1 (en) | 2012-01-05 |
JP2017069588A (ja) | 2017-04-06 |
US20130078758A1 (en) | 2013-03-28 |
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