JP2015537390A - オプトエレクトロニクス半導体素子、およびオプトエレクトロニクス半導体素子の製造方法 - Google Patents
オプトエレクトロニクス半導体素子、およびオプトエレクトロニクス半導体素子の製造方法 Download PDFInfo
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- JP2015537390A JP2015537390A JP2015547002A JP2015547002A JP2015537390A JP 2015537390 A JP2015537390 A JP 2015537390A JP 2015547002 A JP2015547002 A JP 2015547002A JP 2015547002 A JP2015547002 A JP 2015547002A JP 2015537390 A JP2015537390 A JP 2015537390A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 90
- 125000006850 spacer group Chemical group 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 25
- 239000007921 spray Substances 0.000 claims description 12
- 229920003023 plastic Polymers 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000013590 bulk material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 229920001296 polysiloxane Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000012778 molding material Substances 0.000 description 5
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (16)
- 動作中に混色光を放出するオプトエレクトロニクス半導体素子(5)であって、
・光出射面(1A)と、当該光出射面(1A)に対して横方向に延在する少なくとも1つの側面(1B)とを有し、かつ、動作中に当該光出射面(1A)に1次光(6A)を透過させて放出するオプトエレクトロニクス半導体チップ(1)、
・前記1次光(6A)の少なくとも一部を2次光(6B)に波長変換するように構成された変換部材(4)、および、
・スペーサ部材(3)
を有し、
前記変換部材(4)には湾曲が施されており、
前記変換部材(4)は前記オプトエレクトロニクス半導体チップ(1)上に配置されており、
前記スペーサ部材(3)は前記オプトエレクトロニクス半導体チップ(1)と前記変換部材(4)との間に配置されており、
前記スペーサ部材(3)の、前記変換部材(4)の方を向いた表面(3A)は湾曲しており、
前記変換部材(4)は、前記湾曲した表面(3A)と直接接触する
ことを特徴とするオプトエレクトロニクス半導体素子(5)。 - 前記変換部材(4)は、前記湾曲した表面(3A)に設けられた、均一な厚さの層である、
請求項1記載のオプトエレクトロニクス半導体素子(5)。 - 前記スペーサ部材(3)の、前記変換部材(4)の方を向いた湾曲した表面(3A)は、前記変換部材(4)により完全に覆われている、
請求項1または2記載のオプトエレクトロニクス半導体素子(5)。 - 前記少なくとも1つの側面(1B)は前記変換部材(4)により覆われている、
請求項1から3までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記スペーサ部材(3)の、前記変換部材(4)の方を向いた湾曲した表面(3A)は、凸面状に湾曲している、
請求項1から4までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記スペーサ部材(3)は前記光出射面(1A)と直接接触する、
請求項1から5までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記少なくとも1つの側面(1B)は前記スペーサ部材(3)により覆われていない、
請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記スペーサ部材(3)は前記1次光(6A)に対して透過性である、
請求項1から7までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記スペーサ部材(3)は、透明プラスチック材料から成る、
請求項1から8までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記変換部材(4)表面に配置された光学部材(7)を備える、
請求項1から9までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 前記光学部材(7)は、前記半導体チップ(1)から見て下流であって、かつ、当該半導体チップ(1)の前記光出射面(1A)と前記少なくとも1つの側面(1B)とに付着して配置されている、
請求項10記載のオプトエレクトロニクス半導体素子(5)。 - 前記光学部材(7)は、ビーム成形用に構成されたレンズである、
請求項10または11記載のオプトエレクトロニクス半導体素子(5)。 - 前記オプトエレクトロニクス半導体チップ(1)は、面発光型薄膜半導体チップである、
請求項1から12までのいずれか1項記載のオプトエレクトロニクス半導体素子(5)。 - 動作中に混色光を放出するオプトエレクトロニクス半導体素子(5)の製造方法であって、
・光出射面(1A)と、当該光出射面(1A)に対して横方向に延在する少なくとも1つの側面(1B)とを有するオプトエレクトロニクス半導体チップ(1)であって、動作中に当該光出射面(1A)に透過させて1次光(6A)を放出するオプトエレクトロニクス半導体チップ(1)を準備するステップと、
・材料バルクを前記光出射面(1A)に設けて、材料バルクの表面張力により、湾曲した表面(3A)を生じさせて、スペーサ部材(3)を形成するステップと、
・前記スペーサ部材(3)の前記湾曲した表面(3A)に変換材料を被着させることにより、湾曲した変換部材(4)を形成するステップと
を有することを特徴とする製造方法。 - スプレー成膜法を用いて、前記変換材料を前記湾曲した表面(3A)に塗布する、
請求項14記載の製造方法。 - 前記変換部材(4)と前記スペーサ部材(3)とが設けられた前記半導体チップ(1)に、光学部材(7)を一体成形する、
請求項14または15記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012112307.1 | 2012-12-14 | ||
DE102012112307.1A DE102012112307A1 (de) | 2012-12-14 | 2012-12-14 | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
PCT/EP2013/076271 WO2014090894A1 (de) | 2012-12-14 | 2013-12-11 | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015537390A true JP2015537390A (ja) | 2015-12-24 |
JP2015537390A5 JP2015537390A5 (ja) | 2016-09-29 |
JP6092422B2 JP6092422B2 (ja) | 2017-03-08 |
Family
ID=49759309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015547002A Expired - Fee Related JP6092422B2 (ja) | 2012-12-14 | 2013-12-11 | オプトエレクトロニクス半導体素子、およびオプトエレクトロニクス半導体素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9373760B2 (ja) |
JP (1) | JP6092422B2 (ja) |
CN (1) | CN104854715B (ja) |
DE (1) | DE102012112307A1 (ja) |
WO (1) | WO2014090894A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015121074A1 (de) * | 2015-12-03 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Halbleiterbauteil mit lichtleiterschicht |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
JP2006352061A (ja) * | 2004-11-12 | 2006-12-28 | Philips Lumileds Lightng Co Llc | 発光素子への光学要素の結合 |
JP2007324608A (ja) * | 2006-05-31 | 2007-12-13 | Philips Lumileds Lightng Co Llc | 波長変換部材の変更による色管理 |
JP2008135537A (ja) * | 2006-11-28 | 2008-06-12 | Dowa Electronics Materials Co Ltd | 発光装置及びその製造方法 |
JP2010186968A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 発光装置および発光装置の製造方法 |
WO2011104364A1 (de) * | 2010-02-26 | 2011-09-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes bauelement mit einem halbleiterchip und einem konversionselement und verfahren zu dessen herstellung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
WO2010002221A2 (ko) * | 2008-07-03 | 2010-01-07 | 삼성엘이디 주식회사 | 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치 |
DE102008045331A1 (de) | 2008-09-01 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US20110006331A1 (en) * | 2010-09-20 | 2011-01-13 | Alexander Shaikevitch | Light-emitting device with a semi-remote phosphor coating |
US8552454B2 (en) * | 2010-11-29 | 2013-10-08 | Epistar Corporation | Light-emitting device and light mixing device |
US8507328B2 (en) * | 2011-05-27 | 2013-08-13 | Tsmc Solid State Lighting Ltd. | Systems and methods providing semiconductor light emitters |
-
2012
- 2012-12-14 DE DE102012112307.1A patent/DE102012112307A1/de not_active Withdrawn
-
2013
- 2013-12-11 CN CN201380065535.0A patent/CN104854715B/zh not_active Expired - Fee Related
- 2013-12-11 WO PCT/EP2013/076271 patent/WO2014090894A1/de active Application Filing
- 2013-12-11 JP JP2015547002A patent/JP6092422B2/ja not_active Expired - Fee Related
- 2013-12-11 US US14/651,306 patent/US9373760B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
JP2006352061A (ja) * | 2004-11-12 | 2006-12-28 | Philips Lumileds Lightng Co Llc | 発光素子への光学要素の結合 |
JP2007324608A (ja) * | 2006-05-31 | 2007-12-13 | Philips Lumileds Lightng Co Llc | 波長変換部材の変更による色管理 |
JP2008135537A (ja) * | 2006-11-28 | 2008-06-12 | Dowa Electronics Materials Co Ltd | 発光装置及びその製造方法 |
JP2010186968A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 発光装置および発光装置の製造方法 |
WO2011104364A1 (de) * | 2010-02-26 | 2011-09-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes bauelement mit einem halbleiterchip und einem konversionselement und verfahren zu dessen herstellung |
Also Published As
Publication number | Publication date |
---|---|
CN104854715A (zh) | 2015-08-19 |
US9373760B2 (en) | 2016-06-21 |
WO2014090894A1 (de) | 2014-06-19 |
US20150333235A1 (en) | 2015-11-19 |
JP6092422B2 (ja) | 2017-03-08 |
DE102012112307A1 (de) | 2014-06-18 |
CN104854715B (zh) | 2018-05-15 |
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