JP2015517205A - GaNHEMTデバイスに関する裏面バイアのダイヤモンドの直接成長 - Google Patents
GaNHEMTデバイスに関する裏面バイアのダイヤモンドの直接成長 Download PDFInfo
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- JP2015517205A JP2015517205A JP2015501738A JP2015501738A JP2015517205A JP 2015517205 A JP2015517205 A JP 2015517205A JP 2015501738 A JP2015501738 A JP 2015501738A JP 2015501738 A JP2015501738 A JP 2015501738A JP 2015517205 A JP2015517205 A JP 2015517205A
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- Prior art keywords
- diamond
- substrate
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- gan
- gan hemt
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- 239000010432 diamond Substances 0.000 title claims abstract description 67
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (20)
- 上面および底面を備え、前記底面を通って基板内に形成されるバイアを更に備えていることを特徴とする基板であって、ダイヤモンドが、基板のバイアの内で、少なくとも部分的に提供されることを特徴とする、基板と、
基板の上面に提供される複数のエピタキシャル層と、前記エピタキシャル層上に提供される複数のデバイス層と
を有することを特徴とする半導体デバイス。 - 前記ダイヤモンドが、バイア内だけに提供されることを特徴とする請求項1に記載のデバイス。
- 前記ダイヤモンドが、基板の底面の上に層として提供されることを特徴とする請求項1に記載のデバイス。
- 前記ダイヤモンドが、バイアを完全に充填することを特徴とする請求項1に記載のデバイス。
- 前記ダイヤモンドが、バイアを部分的に充填するだけであることを特徴とする請求項1に記載のデバイス。
- 前記バイアが基板を完全に貫通することを特徴とする請求項1に記載のデバイス。
- 前記バイアが基板を介して部分的に伸びるだけであることを特徴とする請求項1に記載のデバイス。
- 前記バイアが基板を介して完全に貫通し、エピタキシャル層の少なくとも1つの中に伸びることを特徴とする請求項1に記載のデバイス。
- デバイスが、GaN HEMT素子であり、基板が炭化ケイ素基板であることを特徴とする請求項1に記載のデバイス。
- ダイヤモンドは、異なるダイヤモンドの純度の複数のダイヤモンド層であり、最も高い純度のダイヤモンド層が基板の上面に最も近いところにあることを特徴とする請求項1に記載のデバイス。
- ダイヤモンドは、ダイヤモンド純度によって、ならされる段階的なダイヤモンド層であり、最も高い純度のダイヤモンドが基板の上面に最も近いところにあることを特徴とする請求項1に記載のデバイス。
- バイアが、デバイス層の幅と同一サイズの幅を有することを特徴とする請求項1に記載のデバイス。
- ダイヤモンドは多結晶ダイアモンドであることを特徴とする請求項1に記載のデバイス。
- 上面および底面を備えている炭化ケイ素基板であって、該基板が底面を介して基板内に形成されるバイアを更に包含することを特徴とする炭化ケイ素基板と、
基板の上面に提供される複数のエピタキシャル層と、
エピタキシャル層に提供される複数のデバイス層と、バイア内に提供されるダイヤモンド層と
を有することを特徴とするGaN HEMTデバイス。 - バイアが、デバイス層の幅と同一サイズの幅を有することを特徴とする請求項14に記載のデバイス。
- ダイヤモンド層が、多結晶ダイヤモンド層であることを特徴とする請求項14に記載のデバイス。
- ダイヤモンド層がバイア内だけに提供されることを特徴とする請求項14に記載のデバイス。
- ダイヤモンド層が、基板の底面の上に層として提供されることを特徴とする請求項14に記載のデバイス。
- ダイヤモンド層がバイアを完全に充填することを特徴とする請求項14に記載のデバイス。
- ダイヤモンド層がバイアを部分的に充填するだけであることを特徴とする請求項14に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/425,245 | 2012-03-20 | ||
US13/425,245 US8575657B2 (en) | 2012-03-20 | 2012-03-20 | Direct growth of diamond in backside vias for GaN HEMT devices |
PCT/US2013/030593 WO2013142156A1 (en) | 2012-03-20 | 2013-03-12 | Direct growth of diamond in backside vias for gan hemt devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015517205A true JP2015517205A (ja) | 2015-06-18 |
JP6174113B2 JP6174113B2 (ja) | 2017-08-02 |
Family
ID=47997902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015501738A Active JP6174113B2 (ja) | 2012-03-20 | 2013-03-12 | GaNHEMTデバイスに関する裏面バイアのダイヤモンドの直接成長 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8575657B2 (ja) |
JP (1) | JP6174113B2 (ja) |
DE (1) | DE112013001611T5 (ja) |
TW (1) | TWI517383B (ja) |
WO (1) | WO2013142156A1 (ja) |
Cited By (5)
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JP2016539510A (ja) * | 2013-09-02 | 2016-12-15 | アールエフエイチアイシー コーポレイション | 基板近傍の熱伝導性が改善された多結晶性cvdダイヤモンドを含む半導体デバイス構造体 |
WO2017115479A1 (ja) * | 2015-12-28 | 2017-07-06 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2017135401A1 (ja) * | 2016-02-04 | 2017-08-10 | 三菱電機株式会社 | 半導体基板 |
WO2017159682A1 (ja) * | 2016-03-18 | 2017-09-21 | 三菱電機株式会社 | 半導体装置および半導体装置を生産する方法 |
US11205704B2 (en) | 2018-02-01 | 2021-12-21 | Mitsubishi Electric Corporation | Semiconductor device and production method therefor |
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JP6143598B2 (ja) * | 2013-08-01 | 2017-06-07 | 株式会社東芝 | 半導体装置 |
US9196703B2 (en) | 2013-08-22 | 2015-11-24 | Northrop Grumman Systems Corporation | Selective deposition of diamond in thermal vias |
KR101758082B1 (ko) | 2013-12-30 | 2017-07-17 | 한국전자통신연구원 | 질화물 반도체 소자의 제조 방법 |
KR102127443B1 (ko) * | 2014-01-08 | 2020-06-26 | 엘지이노텍 주식회사 | 전력 반도체 소자 |
CN104134689B (zh) * | 2014-06-11 | 2018-02-09 | 华为技术有限公司 | 一种hemt器件及制备方法 |
US9876102B2 (en) | 2015-07-17 | 2018-01-23 | Mitsubishi Electric Research Laboratories, Inc. | Semiconductor device with multiple carrier channels |
US9583607B2 (en) | 2015-07-17 | 2017-02-28 | Mitsubishi Electric Research Laboratories, Inc. | Semiconductor device with multiple-functional barrier layer |
US9484284B1 (en) | 2016-03-16 | 2016-11-01 | Northrop Grumman Systems Corporation | Microfluidic impingement jet cooled embedded diamond GaN HEMT |
US9966301B2 (en) * | 2016-06-27 | 2018-05-08 | New Fab, LLC | Reduced substrate effects in monolithically integrated RF circuits |
US9780181B1 (en) | 2016-12-07 | 2017-10-03 | Mitsubishi Electric Research Laboratories, Inc. | Semiconductor device with multi-function P-type diamond gate |
US11488889B1 (en) | 2017-08-08 | 2022-11-01 | Northrop Grumman Systems Corporation | Semiconductor device passive thermal management |
JP7137947B2 (ja) * | 2018-03-22 | 2022-09-15 | ローム株式会社 | 窒化物半導体装置 |
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- 2013-03-12 JP JP2015501738A patent/JP6174113B2/ja active Active
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Also Published As
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JP6174113B2 (ja) | 2017-08-02 |
DE112013001611T5 (de) | 2014-12-24 |
US8575657B2 (en) | 2013-11-05 |
US20130248879A1 (en) | 2013-09-26 |
TW201344904A (zh) | 2013-11-01 |
WO2013142156A1 (en) | 2013-09-26 |
TWI517383B (zh) | 2016-01-11 |
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