JP2015503175A - ナノスケールの冷却機能を持つナノプラズモン素子 - Google Patents
ナノスケールの冷却機能を持つナノプラズモン素子 Download PDFInfo
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- JP2015503175A JP2015503175A JP2014534519A JP2014534519A JP2015503175A JP 2015503175 A JP2015503175 A JP 2015503175A JP 2014534519 A JP2014534519 A JP 2014534519A JP 2014534519 A JP2014534519 A JP 2014534519A JP 2015503175 A JP2015503175 A JP 2015503175A
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- nanoplasmon
- cooling
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- phonon
- cooling structure
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- 238000001816 cooling Methods 0.000 title claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 239000002086 nanomaterial Substances 0.000 claims abstract description 8
- 239000002105 nanoparticle Substances 0.000 claims description 11
- 238000013500 data storage Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052580 B4C Inorganic materials 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000005457 Black-body radiation Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Micromachines (AREA)
- Plasma Technology (AREA)
- Magnetic Record Carriers (AREA)
- Optical Head (AREA)
- Photovoltaic Devices (AREA)
- Carbon And Carbon Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (12)
- 加熱面と冷却面とを有するナノプラズモン加熱層と、前記冷却面に隣接して設けられている冷却構造体とを備え、前記加熱層は複数の局所エネルギー受信サイトを有し、前記冷却構造体は前記加熱層からの熱を取り除くためのナノ規模構造体を有していることを特徴とするナノプラズモン素子。
- 前記冷却構造体はプラズモン冷却層を備えることを特徴とする請求項1に記載のナノプラズモン素子。
- 前記プラズモン冷却層は、縦方向に交互にあらわれるナノ粒子領域と非ナノ粒子領域とを備えていることを特徴とする請求項2に記載のナノプラズモン素子。
- 前記プラズモン冷却層は所定波長以下の厚みを持つ間隙層とプラズモニック副層とを備えていることを特徴とする請求項2に記載のナノプラズモン素子。
- 前記プラズモン冷却層は、交互にあらわれる間隙層とプラズモニック副層とを備えていることを特徴とする請求項4に記載のナノプラズモン素子。
- 前記冷却構造体はフォノン冷却層を備えていることを特徴とする請求項1に記載のナノプラズモン素子。
- 前記フォノン冷却層は、縦方向に交互にあらわれるナノ粒子領域と非ナノ粒子領域とを備えていることを特徴とする請求項6に記載のナノプラズモン素子。
- 前記フォノン冷却層は所定波長以下の厚みを持つ間隙層とフォノン副層とを備えていることを特徴とする請求項6に記載のナノプラズモン素子。
- 前記フォノン冷却層は交互にあらわれる間隙層とフォノン副層とを備えていることを特徴とする請求項8に記載のナノプラズモン素子。
- 前記冷却構造体はミクロン以下の流路を備え、前記流路は熱を吸収するナノ構造体を有していることを特徴とする請求項1に記載のナノプラズモン素子。
- 前記冷却構造体は前記局所エネルギー受信サイトに局在していることを特徴とする請求項1に記載のナノプラズモン素子。
- 前記素子はデータ記憶装置、光起電力電池及び描画媒体のうちいずれか1つであることを特徴とする請求項1に記載のナノプラズモン素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2011/054929 WO2013052045A1 (en) | 2011-10-05 | 2011-10-05 | Nanoplasmonic device with nanoscale cooling |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015503175A true JP2015503175A (ja) | 2015-01-29 |
JP5883938B2 JP5883938B2 (ja) | 2016-03-15 |
Family
ID=48044024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014534519A Active JP5883938B2 (ja) | 2011-10-05 | 2011-10-05 | ナノスケールの冷却機能を持つナノプラズモン素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140246171A1 (ja) |
EP (1) | EP2764763B1 (ja) |
JP (1) | JP5883938B2 (ja) |
KR (1) | KR101719886B1 (ja) |
CN (1) | CN103959924A (ja) |
TR (1) | TR201717340T4 (ja) |
WO (1) | WO2013052045A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11171253B2 (en) * | 2016-09-21 | 2021-11-09 | Kabushiki Kaisha Toshiba | Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201458A (ja) * | 2005-12-28 | 2007-08-09 | Furukawa Electric Co Ltd:The | 異方性冷却素子およびこれを備えた半導体素子 |
JP2010182386A (ja) * | 2009-02-09 | 2010-08-19 | Fuji Electric Device Technology Co Ltd | 磁気記録媒体 |
WO2010109822A1 (ja) * | 2009-03-23 | 2010-09-30 | 昭和電工株式会社 | 熱アシスト磁気記録媒体及び磁気記録再生装置 |
US20120154816A1 (en) * | 2010-12-15 | 2012-06-21 | Sony Corporation | Imaging apparatus, electronic apparatus, photovoltaic cell, and method of manufacturing imaging apparatus |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6713866B2 (en) * | 2002-04-22 | 2004-03-30 | Agilent Technologies, Inc. | Cooling of optoelectronic elements |
US20050116336A1 (en) * | 2003-09-16 | 2005-06-02 | Koila, Inc. | Nano-composite materials for thermal management applications |
US20050126766A1 (en) * | 2003-09-16 | 2005-06-16 | Koila,Inc. | Nanostructure augmentation of surfaces for enhanced thermal transfer with improved contact |
US8704078B2 (en) * | 2006-06-02 | 2014-04-22 | The Boeing Company | Integrated solar cell and battery device including conductive electrical and thermal paths |
CN101836053B (zh) * | 2007-05-21 | 2013-02-27 | Gmz能源公司 | 太阳能热电和太阳能热的热电联产 |
US20100031990A1 (en) * | 2008-08-01 | 2010-02-11 | University Of Kentucky Research Foundation | Cascaded Photovoltaic and Thermophotovoltaic Energy Conversion Apparatus with Near-Field Radiation Transfer Enhancement at Nanoscale Gaps |
-
2011
- 2011-10-05 JP JP2014534519A patent/JP5883938B2/ja active Active
- 2011-10-05 WO PCT/US2011/054929 patent/WO2013052045A1/en active Application Filing
- 2011-10-05 US US14/349,050 patent/US20140246171A1/en not_active Abandoned
- 2011-10-05 TR TR2017/17340T patent/TR201717340T4/tr unknown
- 2011-10-05 CN CN201180073846.2A patent/CN103959924A/zh active Pending
- 2011-10-05 KR KR1020147012031A patent/KR101719886B1/ko active IP Right Grant
- 2011-10-05 EP EP11873687.5A patent/EP2764763B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201458A (ja) * | 2005-12-28 | 2007-08-09 | Furukawa Electric Co Ltd:The | 異方性冷却素子およびこれを備えた半導体素子 |
JP2010182386A (ja) * | 2009-02-09 | 2010-08-19 | Fuji Electric Device Technology Co Ltd | 磁気記録媒体 |
WO2010109822A1 (ja) * | 2009-03-23 | 2010-09-30 | 昭和電工株式会社 | 熱アシスト磁気記録媒体及び磁気記録再生装置 |
US20120154816A1 (en) * | 2010-12-15 | 2012-06-21 | Sony Corporation | Imaging apparatus, electronic apparatus, photovoltaic cell, and method of manufacturing imaging apparatus |
Also Published As
Publication number | Publication date |
---|---|
WO2013052045A1 (en) | 2013-04-11 |
EP2764763A1 (en) | 2014-08-13 |
KR101719886B1 (ko) | 2017-04-04 |
JP5883938B2 (ja) | 2016-03-15 |
US20140246171A1 (en) | 2014-09-04 |
TR201717340T4 (tr) | 2018-06-21 |
EP2764763B1 (en) | 2017-09-27 |
EP2764763A4 (en) | 2015-06-24 |
CN103959924A (zh) | 2014-07-30 |
KR20140127795A (ko) | 2014-11-04 |
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