US20140246171A1 - Nanoplasmonic device with nanoscale cooling - Google Patents

Nanoplasmonic device with nanoscale cooling Download PDF

Info

Publication number
US20140246171A1
US20140246171A1 US14/349,050 US201114349050A US2014246171A1 US 20140246171 A1 US20140246171 A1 US 20140246171A1 US 201114349050 A US201114349050 A US 201114349050A US 2014246171 A1 US2014246171 A1 US 2014246171A1
Authority
US
United States
Prior art keywords
cooling
layer
nanoplasmonic
sub
nanoplasmonic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/349,050
Inventor
Ibrahim Kursat Sendur
Ali Kosar
Mustafa Pinar Menguc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sabanci Universitesi
Ozyegin Universitesi
Original Assignee
Sabanci Universitesi
Ozyegin Universitesi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sabanci Universitesi, Ozyegin Universitesi filed Critical Sabanci Universitesi
Assigned to SABANCI UNIVERSITY, OZYEGIN UNIVERSITY reassignment SABANCI UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOSAR, ALI, KURSAT SENDUR, IBRAHIM, PINAR MENGUC, MUSTAFA
Publication of US20140246171A1 publication Critical patent/US20140246171A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to nanoplasmonic devices and, in particular, to the cooling of nanoplasmonic devices.
  • Nanoplasmonic techniques are being used increasingly to couple optical energy into devices. Examples of such applications include magnetic memory, photovoltaic cells, and sub-wavelength lithography. Besides efficient coupling of the energy, sub-wavelength resolutions are possible.
  • Such applications make use of an optical spot smaller than the diffraction limit. This can result in substantial localized heating. Heat can be removed with a bulk metallic layer, but this can result in general heating by spreading the heat and may as well change the near-field characteristics of the device. In general, it may be difficult to obtain satisfactory cooling in an efficient and compact manner.
  • a nanoplasmonic device includes a nanoplasmonicly heatable layer having a heating side and a cooling side, the heatable layer including a plurality of localized energy receiving sites; and a cooling structure located adjacent to the cooling side, the cooling structure including a nanoscale structure to remove heat from the heated layer.
  • FIG. 1 is a schematic diagram of an example of a nanoplasmonic system according to an aspect of the invention
  • FIG. 2 is a schematic diagram of an example of a nanoplasmonic device according to another aspect of the invention.
  • FIG. 3 is a schematic diagram of an example of a nanoplasmonic device according to an additional aspect of the invention.
  • FIG. 4 is a schematic diagram of an example of a nanoplasmonic device according to another additional aspect of the invention.
  • an example nanoplasmonic system 10 includes optical sources 12 , nanotransducers 14 , and a nanoplasmonic device 20 .
  • the nanoplasmonic device 20 includes a heatable layer 22 having a heating side 24 and a cooling side 26 and a cooling structure 28 adjacent to the cooling side 26 .
  • the cooling structure 28 includes nanostructures described more fully below.
  • the heatable layer 22 may be, for example, a magnetic memory material responsive to heat, a photovoltaic cell, or a lithography material.
  • each optical source 12 and nanotransducer 14 combination can produce a sub-wavelength spot 16 of optical energy on the heatable layer 22 .
  • the nanotransducers 14 may be, for example, known devices for localizing incident radiation into a sub-wavelength heated spots such as nanoparticles, nanoantennas and nanowaveguides. Each spot 16 corresponds to a localized energy receiving site. would also be possible to translate a single optical source 12 and nanotransducer 14 combination to successively illuminate the spots 16 . Radiative heat transfer at the nanoscale is the fundamental mechanism in coupling the sub-wavelength optical spots 16 produced by each optical spot 12 and nanotransducer 16 combination.
  • Electromagnetic radiation from an object scales with 1/R, where R is the distance from the object.
  • the electromagnetic power scales with 1/R ⁇ 2.
  • the radiative heat transfer between the surfaces can be several orders of magnitude higher than predicted by Planck's blackbody radiation.
  • the radiative heat transfer at sub-wavelength distances can be three orders of magnitude higher than the prediction by Planck's blackbody radiation.
  • This enhancement is due to electromagnetic energy tunneling of the evanescent fields, and excitation of surface plasmon or phonon polaritons on the structures.
  • plasmonic cooling or phononic cooling correspond to cooling an object through enhanced energy transfer when one or more of the structures supports surface plasmon resonances or surface phononic resonances, respectively.
  • space or gap between objects may be, for example, air or vacuum, material such as dielectrics may also be used.
  • the nanoplasmonic device 20 includes a heatable layer 22 and a cooling structure 28 ′ formed on a substrate 30 .
  • the substrate may be for example a semiconductor or dielectric material such as silicon or any other suitable material such as ceramic glass or amorphous glass and is generally much thicker than the other layers.
  • the heatable layer may be, for example, 5 nm to 30 nm thick.
  • the cooling structure 28 ′ may be, for example, 5 nm to 200 nm thick.
  • the cooling structure 28 ′ is formed from a dielectric or semiconductor 32 with embedded nanoparticles 34 that support surface plasmon or phonon resonance.
  • the size of the nanoparticles 34 can be between 5 nm and 200 nm. It is expected that particle sizes on the order of 5 nm to 20 nm is preferable.
  • the alternating pattern of particles as a percentage of total width can be referred to as the duty cycle. A typical duty cycle for the particles is around 50 percent.
  • the dielectric 32 can be, for example, an oxide such as silicon dioxide, titanium dioxide, or tantulum pentoxide.
  • the nanoparticles 32 can be made of metals such as gold, silver, aluminum, platinum, or copper to support surface plasmon resonances.
  • the nanoparticles 32 can be made of SiC, cubic boron nitride (cBN), hexagonal boron nitride (hBN), or boron carbide BC to support surface phonon resonances.
  • These structures can be fabricated using different techniques.
  • One potential way to fabricate these structures is the thin-film deposition and patterning techniques, which are well-known and heavily utilized by semiconductor companies and hard-disk drive companies.
  • Thin film layers can be deposited using different techniques such as sputtering, thermal evaporation, or ion beam deposition.
  • the patterning of these structures can be achieved using photolithographic techniques. Alternatively, patterning of these structures can also be achieved using more recently developed techniques including self-ordered arrays or nanoimprint lithography.
  • Different patterns can be made of nanoparticles embedded into a dielectric or semiconductor layer. Different patterns can be obtained by using different duty-cycles between particles. Also, different patterns include the possible shapes that can form the cross section of the layer. Different patterns can refer to different cross sections of nanoparticles, including, for example, spherical, cylindrical, rectangular and square. Different patterns can also refer to different arrangements of these particles with respect to each other, including regular distribution with constant duty-cycle and random distribution.
  • the nanoplasmonic device 20 includes a heatable layer 22 and a cooling structure 28 ′′ formed on a substrate 30 .
  • the substrate may be for example a semiconductor or dielectric material such as silicon or any other suitable material such as ceramic glass or amorphous glass and is generally much thicker than the other layers.
  • the heatable layer may be, for example, 5 nm to 30 nm thick.
  • the cooling structure 28 ′′ may be, for example, 5 nm to 200 nm thick.
  • the cooling structure 28 ′′ includes a gap 36 between the heatable layer 22 and the polariton layers 38 , 40 , 42 , 44 .
  • the gap 36 facilitates the radiative energy transfer between the layers. This gap should be very small, i.e. nanoscale scale or sub-wavelength scale, to facilitate phonon tunneling (or evanescent energy coupling) between the structures.
  • the layer underneath is selected so that it supports surface phonon resonances or alternatively it can be selected to support surface plasmon resonances. This way the radiative energy transfer between the objects is further enhanced.
  • the polariton layers 38 , 40 , 42 , 44 are a multilayer structure, where each layer may have a different thickness and material property. Each layer may have a different property from the other.
  • the stack supports surface plasmon resonances or surface phonon resonances. These are surface waves that can be excited under specific conditions.
  • the layers can be surface plasmon resonance supporting metals such as gold or silver; or surface phonon resonance materials such as SiC, cubic boron nitride (cBN), hexagonal boron nitride (hBN), or boron carbide BC. In between the layers are dielectric layers.
  • the nanoplasmonic device 20 includes a heatable layer 22 and a cooling structure 28 ′′′ formed in the substrate 30 .
  • the cooling structure 28 ′′′ includes sub-micron channels 46 in the substrate 30 for use with a circulating cooling fluid, for example, water. Inside of each channel 46 are nanorods 48 to improve heat absorption by the cooling fluid. Shapes other than rods could also be employed.
  • the cooling structure 28 ′′′ may be, for example fabricated in a silicon substrate.
  • the substrate 30 can be formed from two halves anodically bonded together and similarly bonded to the heatable layer 22 . E-beam lithography techniques can be used to form the channels in each half.
  • the nanostructures can be deposited by glancing angle deposition (GLAD).
  • GLAD glancing angle deposition
  • the nanostructures can be rods of copper for example.
  • cooling structure 28 ′′′ is localized under the spot 16 . This localization can be employed in the other embodiments herein as well. This allows not only the more rapid cooling possible with nanoscale structures, but also the focusing of the cooling effects more closely to where they are needed.

Abstract

A nanoplasmonic device includes a nanoplasmonicly heatable layer having a heating side and a cooling side, the heatable layer including a plurality of localized energy receiving sites; and a cooling structure located adjacent to the cooling side, the cooling structure including a nanoscale structure to remove heat from the heated layer.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to nanoplasmonic devices and, in particular, to the cooling of nanoplasmonic devices.
  • Nanoplasmonic techniques are being used increasingly to couple optical energy into devices. Examples of such applications include magnetic memory, photovoltaic cells, and sub-wavelength lithography. Besides efficient coupling of the energy, sub-wavelength resolutions are possible.
  • Such applications make use of an optical spot smaller than the diffraction limit. This can result in substantial localized heating. Heat can be removed with a bulk metallic layer, but this can result in general heating by spreading the heat and may as well change the near-field characteristics of the device. In general, it may be difficult to obtain satisfactory cooling in an efficient and compact manner.
    • SUMMARY OF THE INVENTION
  • A nanoplasmonic device includes a nanoplasmonicly heatable layer having a heating side and a cooling side, the heatable layer including a plurality of localized energy receiving sites; and a cooling structure located adjacent to the cooling side, the cooling structure including a nanoscale structure to remove heat from the heated layer.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic diagram of an example of a nanoplasmonic system according to an aspect of the invention;
  • FIG. 2 is a schematic diagram of an example of a nanoplasmonic device according to another aspect of the invention;
  • FIG. 3 is a schematic diagram of an example of a nanoplasmonic device according to an additional aspect of the invention; and
  • FIG. 4 is a schematic diagram of an example of a nanoplasmonic device according to another additional aspect of the invention.
    •  DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Referring to FIG. 1, an example nanoplasmonic system 10 includes optical sources 12, nanotransducers 14, and a nanoplasmonic device 20.
  • The nanoplasmonic device 20 includes a heatable layer 22 having a heating side 24 and a cooling side 26 and a cooling structure 28 adjacent to the cooling side 26. The cooling structure 28 includes nanostructures described more fully below.
  • The heatable layer 22 may be, for example, a magnetic memory material responsive to heat, a photovoltaic cell, or a lithography material.
  • In operation, each optical source 12 and nanotransducer 14 combination can produce a sub-wavelength spot 16 of optical energy on the heatable layer 22. The nanotransducers 14 may be, for example, known devices for localizing incident radiation into a sub-wavelength heated spots such as nanoparticles, nanoantennas and nanowaveguides. Each spot 16 corresponds to a localized energy receiving site. would also be possible to translate a single optical source 12 and nanotransducer 14 combination to successively illuminate the spots 16. Radiative heat transfer at the nanoscale is the fundamental mechanism in coupling the sub-wavelength optical spots 16 produced by each optical spot 12 and nanotransducer 16 combination.
  • When two objects are not in contact, i.e. when these two objects are separated by a distance, there is still a heat transfer between objects due to radiative heat transfer. The heat is transferred between these two bodies through electromagnetic radiation. Classically, this electromagnetic radiation from an object is related to the temperature of the object, and is known as the blackbody radiation. The electromagnetic radiative heat transfer from an object to another object not only depends on the temperature of the radiator, but also other factors as well, including the distance between two objects. Electromagnetic radiation from an object scales with 1/R, where R is the distance from the object. The electromagnetic power scales with 1/R̂2.
  • However, at the nanoscale, that is, the sub-wavelength scale, when objects are separated by less than sub-wavelength scale, the radiative heat transfer between the surfaces can be several orders of magnitude higher than predicted by Planck's blackbody radiation. The radiative heat transfer at sub-wavelength distances can be three orders of magnitude higher than the prediction by Planck's blackbody radiation. This enhancement is due to electromagnetic energy tunneling of the evanescent fields, and excitation of surface plasmon or phonon polaritons on the structures. There are several ways to enhance this radiative heat transfer between objects. When the objects are brought into the sub-wavelength near-field regime, the radiative energy transfer between objects is enhanced due to evanescent coupling of the electromagnetic energy between objects. This phenomenon is also referred to as photon tunneling, and it is observed if the objects are separated by less than the wavelength of light. In addition, surface plasmon resonances or phonon resonances also improve the electromagnetic energy transfer. If the structures support surface plasmon resonances or surface phonon resonances, the electromagnetic energy transfer substantially increases. As used herein, plasmonic cooling or phononic cooling correspond to cooling an object through enhanced energy transfer when one or more of the structures supports surface plasmon resonances or surface phononic resonances, respectively.
  • While the space or gap between objects may be, for example, air or vacuum, material such as dielectrics may also be used.
  • Referring to FIG. 2, the nanoplasmonic device 20 includes a heatable layer 22 and a cooling structure 28′ formed on a substrate 30. The substrate may be for example a semiconductor or dielectric material such as silicon or any other suitable material such as ceramic glass or amorphous glass and is generally much thicker than the other layers. The heatable layer may be, for example, 5 nm to 30 nm thick. The cooling structure 28′ may be, for example, 5 nm to 200 nm thick.
  • The cooling structure 28′ is formed from a dielectric or semiconductor 32 with embedded nanoparticles 34 that support surface plasmon or phonon resonance.
  • The size of the nanoparticles 34 can be between 5 nm and 200 nm. It is expected that particle sizes on the order of 5 nm to 20 nm is preferable. The alternating pattern of particles as a percentage of total width can be referred to as the duty cycle. A typical duty cycle for the particles is around 50 percent.
  • The dielectric 32 can be, for example, an oxide such as silicon dioxide, titanium dioxide, or tantulum pentoxide. The nanoparticles 32 can be made of metals such as gold, silver, aluminum, platinum, or copper to support surface plasmon resonances. Alternatively, the nanoparticles 32 can be made of SiC, cubic boron nitride (cBN), hexagonal boron nitride (hBN), or boron carbide BC to support surface phonon resonances.
  • These structures can be fabricated using different techniques. One potential way to fabricate these structures is the thin-film deposition and patterning techniques, which are well-known and heavily utilized by semiconductor companies and hard-disk drive companies. Thin film layers can be deposited using different techniques such as sputtering, thermal evaporation, or ion beam deposition. The patterning of these structures can be achieved using photolithographic techniques. Alternatively, patterning of these structures can also be achieved using more recently developed techniques including self-ordered arrays or nanoimprint lithography.
  • Different patterns can be made of nanoparticles embedded into a dielectric or semiconductor layer. Different patterns can be obtained by using different duty-cycles between particles. Also, different patterns include the possible shapes that can form the cross section of the layer. Different patterns can refer to different cross sections of nanoparticles, including, for example, spherical, cylindrical, rectangular and square. Different patterns can also refer to different arrangements of these particles with respect to each other, including regular distribution with constant duty-cycle and random distribution.
  • This utilizes the coupling between fundamental electromagnetic and thermal phenomena. Placing patterned structures that can support surface plasmon resonances and phonon resonances improve the localized electromagnetic and optical field distribution around these regions. Such localized and improved optical fields improve the radiative energy transfer between these particles and the heatable layer thereby improving the localized heating and cooling.
  • Referring to FIG. 3, the nanoplasmonic device 20 includes a heatable layer 22 and a cooling structure 28″ formed on a substrate 30. The substrate may be for example a semiconductor or dielectric material such as silicon or any other suitable material such as ceramic glass or amorphous glass and is generally much thicker than the other layers. The heatable layer may be, for example, 5 nm to 30 nm thick. The cooling structure 28″ may be, for example, 5 nm to 200 nm thick.
  • The cooling structure 28″ includes a gap 36 between the heatable layer 22 and the polariton layers 38, 40, 42, 44. The gap 36 facilitates the radiative energy transfer between the layers. This gap should be very small, i.e. nanoscale scale or sub-wavelength scale, to facilitate phonon tunneling (or evanescent energy coupling) between the structures. The layer underneath is selected so that it supports surface phonon resonances or alternatively it can be selected to support surface plasmon resonances. This way the radiative energy transfer between the objects is further enhanced.
  • The polariton layers 38, 40, 42, 44 are a multilayer structure, where each layer may have a different thickness and material property. Each layer may have a different property from the other. The stack supports surface plasmon resonances or surface phonon resonances. These are surface waves that can be excited under specific conditions. The layers can be surface plasmon resonance supporting metals such as gold or silver; or surface phonon resonance materials such as SiC, cubic boron nitride (cBN), hexagonal boron nitride (hBN), or boron carbide BC. In between the layers are dielectric layers.
  • Referring to FIG. 4, the nanoplasmonic device 20 includes a heatable layer 22 and a cooling structure 28′″ formed in the substrate 30.
  • The cooling structure 28′″ includes sub-micron channels 46 in the substrate 30 for use with a circulating cooling fluid, for example, water. Inside of each channel 46 are nanorods 48 to improve heat absorption by the cooling fluid. Shapes other than rods could also be employed.
  • The cooling structure 28′″ may be, for example fabricated in a silicon substrate. The substrate 30 can be formed from two halves anodically bonded together and similarly bonded to the heatable layer 22. E-beam lithography techniques can be used to form the channels in each half. Before bonding, the nanostructures can be deposited by glancing angle deposition (GLAD). The nanostructures can be rods of copper for example.
  • It should be noted that the cooling structure 28′″ is localized under the spot 16. This localization can be employed in the other embodiments herein as well. This allows not only the more rapid cooling possible with nanoscale structures, but also the focusing of the cooling effects more closely to where they are needed.
  • It should be evident that this disclosure is by way of example and that various changes may be made by adding, modifying or eliminating details without departing from the fair scope of the teaching contained in this disclosure. The invention is therefore not limited to particular details of this disclosure except to the extent that the following claims are necessarily so limited.

Claims (12)

What is claimed is:
1. A nanoplasmonic device comprising:
a nanoplasmonicly heatable layer having a heating side and a cooling side, said heatable layer including a plurality of localized energy receiving sites; and
a cooling structure located adjacent to said cooling side, said cooling structure including a nanoscale structure to remove heat from said heated layer.
2. A nanoplasmonic device according to claim 1, wherein said cooling structure comprises a plasmonic cooling layer.
3. A nanoplasmonic device according to claim 2, wherein said plasmonic cooling layer comprises longitudinally alternating nanoparticles and non-nanoparticle regions.
4. A nanoplasmonic device according to claim 2, wherein said plasmonic cooling layer comprises a gap layer of less than a sub-wavelength thickness and a plasmonic sub-layer.
5. A nanoplasmonic device according to claim 4, wherein said plasmonic cooling layer comprises alternating gap layers and plasmonic sub-layers.
6. A nanoplasmonic device according to claim 1, wherein said cooling structure comprises a phononic cooling layer.
7. A nanoplasmonic device according to claim 6, wherein said phononic cooling layer comprises longitudinally alternating nanoparticle and non-nanoparticle regions.
8. A nanoplasmonic device according to claim 6, wherein said phononic cooling layer comprises a gap layer of less than a sub-wavelength thickness and a phononic sub-layer.
9. A nanoplasmonic device according to claim 8, wherein said phononic cooling layer comprises alternating gap layers and phononic sub-layers.
10. A nanoplasmonic device according to claim 1, wherein said cooling structure comprises sub-micron fluid passages including nanostructure heat-absorbing structures.
11. A nanoplasmonic device according to claim 1, wherein said cooling structure is localized to said localized energy receiving sites.
12. A nanoplasmonic device according to claim 1, wherein said device is one of a data storage device, a photovoltaic cell and a lithography medium.
US14/349,050 2011-10-05 2011-10-05 Nanoplasmonic device with nanoscale cooling Abandoned US20140246171A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/054929 WO2013052045A1 (en) 2011-10-05 2011-10-05 Nanoplasmonic device with nanoscale cooling

Publications (1)

Publication Number Publication Date
US20140246171A1 true US20140246171A1 (en) 2014-09-04

Family

ID=48044024

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/349,050 Abandoned US20140246171A1 (en) 2011-10-05 2011-10-05 Nanoplasmonic device with nanoscale cooling

Country Status (7)

Country Link
US (1) US20140246171A1 (en)
EP (1) EP2764763B1 (en)
JP (1) JP5883938B2 (en)
KR (1) KR101719886B1 (en)
CN (1) CN103959924A (en)
TR (1) TR201717340T4 (en)
WO (1) WO2013052045A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180083150A1 (en) * 2016-09-21 2018-03-22 Kabushiki Kaisha Toshiba Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030197266A1 (en) * 2002-04-22 2003-10-23 Jonathan Simon Cooling of optoelectronic elements
US20050116336A1 (en) * 2003-09-16 2005-06-02 Koila, Inc. Nano-composite materials for thermal management applications
US20070277876A1 (en) * 2006-06-02 2007-12-06 The Boeing Company Integrated solar cell and battery device including conductive electrical and thermal paths
US20100031990A1 (en) * 2008-08-01 2010-02-11 University Of Kentucky Research Foundation Cascaded Photovoltaic and Thermophotovoltaic Energy Conversion Apparatus with Near-Field Radiation Transfer Enhancement at Nanoscale Gaps

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050126766A1 (en) * 2003-09-16 2005-06-16 Koila,Inc. Nanostructure augmentation of surfaces for enhanced thermal transfer with improved contact
JP4833827B2 (en) * 2005-12-28 2011-12-07 古河電気工業株式会社 Anisotropic cooling element, Peltier module including the same, light emitting diode element, semiconductor laser element
WO2008153686A2 (en) * 2007-05-21 2008-12-18 Gmz Energy, Inc. Solar thermoelectric and thermal cogeneration
JP5332676B2 (en) * 2009-02-09 2013-11-06 富士電機株式会社 Magnetic recording medium
WO2010109822A1 (en) * 2009-03-23 2010-09-30 昭和電工株式会社 Thermally assisted magnetic recording medium, and magnetic recording/reproducing device
JP5541137B2 (en) * 2010-12-15 2014-07-09 ソニー株式会社 Imaging device, electronic device, solar battery, and manufacturing method of imaging device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030197266A1 (en) * 2002-04-22 2003-10-23 Jonathan Simon Cooling of optoelectronic elements
US20050116336A1 (en) * 2003-09-16 2005-06-02 Koila, Inc. Nano-composite materials for thermal management applications
US20070277876A1 (en) * 2006-06-02 2007-12-06 The Boeing Company Integrated solar cell and battery device including conductive electrical and thermal paths
US20100031990A1 (en) * 2008-08-01 2010-02-11 University Of Kentucky Research Foundation Cascaded Photovoltaic and Thermophotovoltaic Energy Conversion Apparatus with Near-Field Radiation Transfer Enhancement at Nanoscale Gaps

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180083150A1 (en) * 2016-09-21 2018-03-22 Kabushiki Kaisha Toshiba Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system
US11171253B2 (en) * 2016-09-21 2021-11-09 Kabushiki Kaisha Toshiba Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system

Also Published As

Publication number Publication date
TR201717340T4 (en) 2018-06-21
JP2015503175A (en) 2015-01-29
CN103959924A (en) 2014-07-30
KR101719886B1 (en) 2017-04-04
EP2764763A4 (en) 2015-06-24
WO2013052045A1 (en) 2013-04-11
EP2764763A1 (en) 2014-08-13
EP2764763B1 (en) 2017-09-27
KR20140127795A (en) 2014-11-04
JP5883938B2 (en) 2016-03-15

Similar Documents

Publication Publication Date Title
Lee et al. Hyperbolic metamaterials: fusing artificial structures to natural 2D materials
Cuevas et al. Radiative heat transfer
Park et al. Fundamentals and applications of near-field radiative energy transfer
Shi et al. Colossal enhancement of near-field thermal radiation across hundreds of nanometers between millimeter-scale plates through surface plasmon and phonon polaritons coupling
Maurer et al. Coupling between plasmonic films and nanostructures: from basics to applications
Duan et al. Launching phonon polaritons by natural boron nitride wrinkles with modifiable dispersion by dielectric environments
Mupparapu et al. Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures
Song et al. 1D trilayer films grating with W/SiO2/W structure as a wavelength-selective emitter for thermophotovoltaic applications
Cheng et al. All-optical manipulation of magnetization in ferromagnetic thin films enhanced by plasmonic resonances
Liu et al. Near-field radiative heat transfer in hyperbolic materials
Qi et al. Effects of gap thickness and emitter location on the photoluminescence enhancement of monolayer MoS2 in a plasmonic nanoparticle-film coupled system
Pascale et al. Perspective on near-field radiative heat transfer
Didari et al. Near-field radiative transfer in spectrally tunable double-layer phonon-polaritonic metamaterials
CN103337271B (en) A kind of Trapping of Atoms of chip surface and Optical Lattices method
Zhao et al. Atomic-scale control of coherent thermal radiation
Patel et al. Generation of highly confined photonic nanojet using crescent-shape refractive index profile in microsphere
Sakurai et al. Electromagnetic resonances of solar-selective absorbers with nanoparticle arrays embedded in a dielectric layer
Pfeiffer et al. Coupling a single solid-state quantum emitter to an array of resonant plasmonic antennas
Ussembayev et al. Contrasting anisotropy of light absorption and emission by semiconductor nanoparticles
Toropov et al. Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures
EP2764763B1 (en) Nanoplasmonic device with nanoscale cooling
Tanjaya et al. Photothermal heating and heat transfer analysis of anodic aluminum oxide with high optical absorptance
Liu et al. Near-field thermal radiation of metamaterials/metasurfaces constructed of natural anisotropic materials
RU2796816C1 (en) Method for creating a controlled subwavelength temperature profile and a plasmonic metasurface for implementing the method
Wang et al. Solar energy harvesting by perfect absorbers made of natural hyperbolic material

Legal Events

Date Code Title Description
AS Assignment

Owner name: OZYEGIN UNIVERSITY, TURKEY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KURSAT SENDUR, IBRAHIM;KOSAR, ALI;PINAR MENGUC, MUSTAFA;SIGNING DATES FROM 20140225 TO 20140306;REEL/FRAME:032656/0855

Owner name: SABANCI UNIVERSITY, TURKEY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KURSAT SENDUR, IBRAHIM;KOSAR, ALI;PINAR MENGUC, MUSTAFA;SIGNING DATES FROM 20140225 TO 20140306;REEL/FRAME:032656/0855

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION