JP2015202507A - 高温はんだ合金 - Google Patents
高温はんだ合金 Download PDFInfo
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- JP2015202507A JP2015202507A JP2014082816A JP2014082816A JP2015202507A JP 2015202507 A JP2015202507 A JP 2015202507A JP 2014082816 A JP2014082816 A JP 2014082816A JP 2014082816 A JP2014082816 A JP 2014082816A JP 2015202507 A JP2015202507 A JP 2015202507A
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- solder alloy
- solder
- mass
- temperature solder
- temperature
- Prior art date
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- Granted
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 170
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 104
- 239000000956 alloy Substances 0.000 title claims abstract description 104
- 229910052718 tin Inorganic materials 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 18
- 238000005304 joining Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910000765 intermetallic Inorganic materials 0.000 abstract description 15
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 36
- 238000000034 method Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 16
- 229910016338 Bi—Sn Inorganic materials 0.000 description 14
- 230000008018 melting Effects 0.000 description 12
- 238000002844 melting Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000004907 flux Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 229910020938 Sn-Ni Inorganic materials 0.000 description 8
- 229910008937 Sn—Ni Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- 229910018104 Ni-P Inorganic materials 0.000 description 7
- 229910018536 Ni—P Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 229910018125 Al-Si Inorganic materials 0.000 description 5
- 229910018520 Al—Si Inorganic materials 0.000 description 5
- 229910020836 Sn-Ag Inorganic materials 0.000 description 5
- 229910020988 Sn—Ag Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910018594 Si-Cu Inorganic materials 0.000 description 4
- 229910008465 Si—Cu Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000006071 cream Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 3
- QUMCIHKVKQYNPA-RUZDIDTESA-N C1(CCCCC1)CN1[C@@H](C=2N(C=3C=NC(=NC1=3)NC1=C(C=C(C(=O)NC3CCN(CC3)C)C=C1)OC)C(=NN=2)C)CC Chemical compound C1(CCCCC1)CN1[C@@H](C=2N(C=3C=NC(=NC1=3)NC1=C(C=C(C(=O)NC3CCN(CC3)C)C=C1)OC)C(=NN=2)C)CC QUMCIHKVKQYNPA-RUZDIDTESA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910016331 Bi—Ag Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910005887 NiSn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010967 Ti—Sn Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Abstract
Description
本発明は、第1の実施形態によれば、高温はんだ合金であってスズ(Sn)を、0.05質量%〜0.3質量%含有し、残部は、ビスマス(Bi)及び不可避不純物からなる。不可避不純物とは、主として、銅(Cu)、ニッケル(Ni)、亜鉛(Zn)、鉄(Fe)、アルミニウム(Al)、ヒ素(As)、カドミウム(Cd)、銀(Ag)、金(Au)、インジウム(In)、リン(P)、鉛(Pb)などをいう。また、本発明による高温はんだ合金は、Pbを含まない鉛フリー高温はんだ合金である。
本発明は、第2の実施形態によれば、高温はんだ合金であってSnを、0.05質量%〜0.3質量%含有し、Agを、0.5質量%〜11.0質量%含有し、残部は、Bi及び不可避不純物からなる。第2実施形態による高温はんだ合金も、不可避不純物を除いて、Pbを含まない鉛フリー高温はんだ合金である。Agは、Biの濡れ性を改善することができるため、第1実施形態によるBi−Sn二元系はんだの特性をさらに改善することができる。
本発明の実施例に係るBi−Sn二元系高温はんだ合金、及び比較例のBiーGe系はんだを用いて、その接合特性を評価した。
本実験例は、Bi−Sn−Ag三元系高温はんだ合金の特性評価に代えて、Biはんだの特性を改善するAgの添加効果を調べたものである。Ag添加によりAg3Sn金属間化合物が形成すると低融点層(Sn層)が減少して、耐リフロー性の向上が予測され、Ag添加によって先の実施例で実証したBi−Sn高温はんだ合金の有利な特性を損なうことがないことは、合理的に推測することが可能である。
1a 高温はんだ合金層
1b Ni−Sn化合物層
2 Siチップ(SiCチップ)
20 Si層
21 Al−Si膜
22 Ni−P膜
23 Auめっき膜
3 基板
4 ワイヤボンディング
5 封止材
9 Snを含まないはんだ合金
9a はんだ合金層
9b Bi−Ni金属間化合物層
50 ボイド
100 半導体装置
200 SOP
300 QFP
400 プリント基板
Claims (6)
- スズを、0.05質量%〜0.3質量%含有し、残部は、ビスマス及び不可避不純物からなる高温はんだ合金。
- 前記スズを、0.1質量%〜0.3質量%含有する、請求項1に記載の高温はんだ合金。
- さらに、銀を、0.5質量%〜11質量%含有する、請求項1または2のいずれかに記載の高温はんだ合金。
- 前記銀を、0.5質量%〜2.5質量%含有する、請求項3に記載の高温はんだ合金。
- 表面実装部品の接合に用いるための、請求項1〜4のいずれかに記載の高温はんだ合金。
- 金属基板とSiチップもしくはSiCチップとを、請求項1〜5のいずれかに記載の高温はんだ合金で接合してなる接合体を備えてなる半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014082816A JP6543890B2 (ja) | 2014-04-14 | 2014-04-14 | 高温はんだ合金 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014082816A JP6543890B2 (ja) | 2014-04-14 | 2014-04-14 | 高温はんだ合金 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015202507A true JP2015202507A (ja) | 2015-11-16 |
JP6543890B2 JP6543890B2 (ja) | 2019-07-17 |
Family
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JP2014082816A Active JP6543890B2 (ja) | 2014-04-14 | 2014-04-14 | 高温はんだ合金 |
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JP (1) | JP6543890B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107041081A (zh) * | 2017-06-02 | 2017-08-11 | 奇酷互联网络科技(深圳)有限公司 | Pcb表面贴装方法和印刷电路板 |
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WO2007055308A1 (ja) * | 2005-11-11 | 2007-05-18 | Senju Metal Industry Co., Ltd. | ソルダペーストとはんだ継手 |
JP2010129664A (ja) * | 2008-11-26 | 2010-06-10 | Fujitsu Ltd | 電子装置及びその製造方法 |
JP2011014705A (ja) * | 2009-07-01 | 2011-01-20 | Hitachi Ltd | 半導体装置および半導体装置の製造方法 |
JP2015098046A (ja) * | 2013-11-19 | 2015-05-28 | 住友金属鉱山株式会社 | Bi基はんだ合金、並びにそれを用いた電子部品のボンディング方法および電子部品実装基板 |
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2014
- 2014-04-14 JP JP2014082816A patent/JP6543890B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001205477A (ja) * | 2000-01-25 | 2001-07-31 | Murata Mfg Co Ltd | 半田付け構造ならびに貫通型セラミックコンデンサ |
JP2001353590A (ja) * | 2000-06-12 | 2001-12-25 | Murata Mfg Co Ltd | はんだ組成物およびはんだ付け物品 |
JP2004533327A (ja) * | 2001-05-28 | 2004-11-04 | ハネウエル・インターナシヨナル・インコーポレーテツド | 高温鉛フリーハンダ用組成物、方法およびデバイス |
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CN107041081A (zh) * | 2017-06-02 | 2017-08-11 | 奇酷互联网络科技(深圳)有限公司 | Pcb表面贴装方法和印刷电路板 |
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JP6543890B2 (ja) | 2019-07-17 |
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