JP2015201558A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 abstract description 47
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 150000002500 ions Chemical class 0.000 description 10
- 238000005530 etching Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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Abstract
Description
処理チャンバー内圧力:5.32Pa(40mTorr)
第1の高周波:周波数100MHz、300W
第2の高周波:周波数3.2MHz、10000W
処理時間:1分
なお、プラズマエッチング条件は、上記に限定されるものではなく、処理ガスの流量を、C4F8+C4F6=10〜300sccm、Ar=50〜800sccm、O2=5〜150sccmから任意に選択することにより、圧力を1.33〜5.32Pa(10〜40mTorr)に設定することが可能である。
Claims (7)
- 被処理基板にプラズマを作用させて処理を行うプラズマ処理方法であって、
前記被処理基板を収容する処理チャンバーと、
前記処理チャンバー内に配設され、前記被処理基板が載置される下部電極と、
前記処理チャンバー内に配設され、前記下部電極と対向する上部電極と、
前記被処理基板の周囲を囲むように配設されたフォーカスリングと、
前記上部電極と前記下部電極との間に高周波電力を印加する高周波電源と、
前記処理チャンバーの上部に配設された環状の電磁石であって、前記被処理基板の周縁部より外側に位置するように配設された環状のコイルを有する電磁石と、
を具備したプラズマ処理装置を用い、
前記コイルに通電して磁界を発生させることにより、前記被処理基板の上部及び前記フォーカスリングの上部に形成されるプラズマシースの界面を平坦化する
ことを特徴とするプラズマ処理方法。 - 請求項1記載のプラズマ処理方法であって、
前記被処理基板及び前記フォーカスリングの上部に形成されるプラズマシースの界面を平坦化することによって、プラズマエッチングによって形成されたパターンにチルティングが発生することを抑制することを特徴とするプラズマ処理方法。 - 請求項1又は2記載のプラズマ処理方法であって、
前記コイルに通電することによって発生させた磁界は、その水平磁界成分の径方向の分布が前記被処理基板の外周縁部より外側の部分でピークを有することを特徴とするプラズマ処理方法。 - 請求項1〜3いずれか1項記載のプラズマ処理方法であって、
前記フォーカスリングの消耗状態に応じて前記コイルに通電する電流を変化させることを特徴とするプラズマ処理方法。 - 被処理基板にプラズマを作用させて処理を行うプラズマ処理装置であって、
前記被処理基板を収容する処理チャンバーと、
前記処理チャンバー内に配設され、前記被処理基板が載置される下部電極と、
前記処理チャンバー内に配設され、前記下部電極と対向する上部電極と、
前記被処理基板の周囲を囲むように配設されたフォーカスリングと、
前記上部電極と前記下部電極との間に高周波電力を印加する高周波電源と、
前記処理チャンバーの上部に配設された環状の電磁石であって、前記被処理基板の周縁部より外側に位置するように配設された環状のコイルを有する電磁石と、
前記コイルに通電して磁界を発生させることにより、前記被処理基板の上部及び前記フォーカスリングの上部に形成されるプラズマシースの界面を平坦化する制御部と、
を具備したことを特徴とするプラズマ処理装置。 - 請求項5記載のプラズマ処理装置であって、
前記コイルに通電することによって発生させた磁界は、その水平磁界成分の径方向の分布が前記被処理基板の外周縁部より外側の部分でピークを有することを特徴とするプラズマ処理装置。 - 請求項5又は6記載のプラズマ処理装置であって、
前記制御部は、前記フォーカスリングの消耗状態に応じて前記電磁石に通電する電流を変化させることを特徴とするプラズマ処理装置。
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JP2014080039A JP6244518B2 (ja) | 2014-04-09 | 2014-04-09 | プラズマ処理方法及びプラズマ処理装置 |
KR1020167024685A KR102361757B1 (ko) | 2014-04-09 | 2015-04-06 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
PCT/JP2015/001913 WO2015155972A1 (ja) | 2014-04-09 | 2015-04-06 | プラズマ処理方法及びプラズマ処理装置 |
CN201580012852.5A CN106104768B (zh) | 2014-04-09 | 2015-04-06 | 等离子体处理方法和等离子体处理装置 |
US15/264,955 US10170284B2 (en) | 2014-04-09 | 2016-09-14 | Plasma processing method and plasma processing apparatus |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017212051A (ja) * | 2016-05-23 | 2017-11-30 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP2019087666A (ja) * | 2017-11-08 | 2019-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
JP2019186400A (ja) * | 2018-04-11 | 2019-10-24 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム |
KR20200066212A (ko) | 2018-11-30 | 2020-06-09 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치, 산출 방법 및 산출 프로그램 |
US10699882B2 (en) | 2018-02-22 | 2020-06-30 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US11621177B2 (en) | 2019-05-13 | 2023-04-04 | Tokyo Electron Limited | Plasma processing apparatus and calculation method |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102472651B1 (ko) * | 2015-05-11 | 2022-11-30 | 가부시키가이샤 에바라 세이사꾸쇼 | 전자석 장치, 전자석 제어 장치, 전자석 제어 방법 및 전자석 시스템 |
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US12020898B2 (en) * | 2019-09-09 | 2024-06-25 | Tokyo Electron Limited | Plasma processing system and method of processing substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267237A (ja) * | 1992-03-23 | 1993-10-15 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ・ダメージ低減法およびプラズマ処理装置 |
JP2004303939A (ja) * | 2003-03-31 | 2004-10-28 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置及び磁場発生装置 |
JP2007258417A (ja) * | 2006-03-23 | 2007-10-04 | Tokyo Electron Ltd | プラズマ処理方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
JP3375302B2 (ja) * | 1998-07-29 | 2003-02-10 | 東京エレクトロン株式会社 | マグネトロンプラズマ処理装置および処理方法 |
US20070224709A1 (en) * | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
US7837826B2 (en) * | 2006-07-18 | 2010-11-23 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
KR20080023569A (ko) * | 2006-09-11 | 2008-03-14 | 주식회사 하이닉스반도체 | 식각프로파일 변형을 방지하는 플라즈마식각장치 |
JP2009245988A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法 |
JP5371466B2 (ja) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6018757B2 (ja) | 2012-01-18 | 2016-11-02 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5808697B2 (ja) * | 2012-03-01 | 2015-11-10 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置及びドライエッチング方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267237A (ja) * | 1992-03-23 | 1993-10-15 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ・ダメージ低減法およびプラズマ処理装置 |
JP2004303939A (ja) * | 2003-03-31 | 2004-10-28 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置及び磁場発生装置 |
JP2007258417A (ja) * | 2006-03-23 | 2007-10-04 | Tokyo Electron Ltd | プラズマ処理方法 |
Cited By (12)
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JP2017212051A (ja) * | 2016-05-23 | 2017-11-30 | 東京エレクトロン株式会社 | プラズマ処理方法 |
KR20170132096A (ko) * | 2016-05-23 | 2017-12-01 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
KR102350148B1 (ko) | 2016-05-23 | 2022-01-11 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
JP2019087666A (ja) * | 2017-11-08 | 2019-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
US10699882B2 (en) | 2018-02-22 | 2020-06-30 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
JP2019186400A (ja) * | 2018-04-11 | 2019-10-24 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム |
JP7055054B2 (ja) | 2018-04-11 | 2022-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム |
KR20200066212A (ko) | 2018-11-30 | 2020-06-09 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치, 산출 방법 및 산출 프로그램 |
US11488808B2 (en) | 2018-11-30 | 2022-11-01 | Tokyo Electron Limited | Plasma processing apparatus, calculation method, and calculation program |
US11862438B2 (en) | 2018-11-30 | 2024-01-02 | Tokyo Electron Limited | Plasma processing apparatus, calculation method, and calculation program |
US11621177B2 (en) | 2019-05-13 | 2023-04-04 | Tokyo Electron Limited | Plasma processing apparatus and calculation method |
WO2024018960A1 (ja) * | 2022-07-20 | 2024-01-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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KR20160141712A (ko) | 2016-12-09 |
US10170284B2 (en) | 2019-01-01 |
KR102361757B1 (ko) | 2022-02-10 |
CN106104768B (zh) | 2019-12-03 |
US20170004956A1 (en) | 2017-01-05 |
CN106104768A (zh) | 2016-11-09 |
WO2015155972A1 (ja) | 2015-10-15 |
JP6244518B2 (ja) | 2017-12-13 |
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