JP2015099828A - 圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 - Google Patents
圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 Download PDFInfo
- Publication number
- JP2015099828A JP2015099828A JP2013238246A JP2013238246A JP2015099828A JP 2015099828 A JP2015099828 A JP 2015099828A JP 2013238246 A JP2013238246 A JP 2013238246A JP 2013238246 A JP2013238246 A JP 2013238246A JP 2015099828 A JP2015099828 A JP 2015099828A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- piezoelectric element
- electrode
- ethylhexanoate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 40
- 238000010248 power generation Methods 0.000 title claims abstract description 13
- 238000002347 injection Methods 0.000 title abstract 4
- 239000007924 injection Substances 0.000 title abstract 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000010936 titanium Substances 0.000 claims abstract description 36
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 32
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 26
- 229910052742 iron Inorganic materials 0.000 claims abstract description 25
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 24
- 238000006073 displacement reaction Methods 0.000 claims abstract description 22
- 229910052788 barium Inorganic materials 0.000 claims abstract description 18
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 14
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 12
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000032258 transport Effects 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 32
- 239000000463 material Substances 0.000 abstract description 31
- 239000002131 composite material Substances 0.000 abstract description 24
- 239000010410 layer Substances 0.000 description 90
- 239000000758 substrate Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 52
- 239000011572 manganese Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 21
- 150000004696 coordination complex Chemical class 0.000 description 20
- 239000002243 precursor Substances 0.000 description 19
- 229910052748 manganese Inorganic materials 0.000 description 18
- 230000001681 protective effect Effects 0.000 description 17
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000011651 chromium Substances 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 238000005238 degreasing Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 229910052725 zinc Inorganic materials 0.000 description 9
- SMSVUYQRWYTTLI-UHFFFAOYSA-L 2-ethylhexanoate;iron(2+) Chemical compound [Fe+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O SMSVUYQRWYTTLI-UHFFFAOYSA-L 0.000 description 8
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 8
- NJLQUTOLTXWLBV-UHFFFAOYSA-N 2-ethylhexanoic acid titanium Chemical compound [Ti].CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O NJLQUTOLTXWLBV-UHFFFAOYSA-N 0.000 description 8
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- VJFFDDQGMMQGTQ-UHFFFAOYSA-L barium(2+);2-ethylhexanoate Chemical compound [Ba+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O VJFFDDQGMMQGTQ-UHFFFAOYSA-L 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- DLWBHRIWCMOQKI-UHFFFAOYSA-L strontium;2-ethylhexanoate Chemical compound [Sr+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O DLWBHRIWCMOQKI-UHFFFAOYSA-L 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- -1 iridium (Ir) Chemical class 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- UVPKUTPZWFHAHY-UHFFFAOYSA-L 2-ethylhexanoate;nickel(2+) Chemical compound [Ni+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O UVPKUTPZWFHAHY-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HKAASGNXFXHLHR-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] HKAASGNXFXHLHR-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- DJHZYHWLGNJISM-FDGPNNRMSA-L barium(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ba+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O DJHZYHWLGNJISM-FDGPNNRMSA-L 0.000 description 1
- GYIWFHXWLCXGQO-UHFFFAOYSA-N barium(2+);ethanolate Chemical compound [Ba+2].CC[O-].CC[O-] GYIWFHXWLCXGQO-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- NPCUWXDZFXSRLT-UHFFFAOYSA-N chromium;2-ethylhexanoic acid Chemical compound [Cr].CCCCC(CC)C(O)=O NPCUWXDZFXSRLT-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- QAEKNCDIHIGLFI-UHFFFAOYSA-L cobalt(2+);2-ethylhexanoate Chemical compound [Co+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O QAEKNCDIHIGLFI-UHFFFAOYSA-L 0.000 description 1
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- SEKCXMNFUDONGJ-UHFFFAOYSA-L copper;2-ethylhexanoate Chemical compound [Cu+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O SEKCXMNFUDONGJ-UHFFFAOYSA-L 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- PVFSDGKDKFSOTB-UHFFFAOYSA-K iron(3+);triacetate Chemical compound [Fe+3].CC([O-])=O.CC([O-])=O.CC([O-])=O PVFSDGKDKFSOTB-UHFFFAOYSA-K 0.000 description 1
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011254 layer-forming composition Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- JTQPTNQXCUMDRK-UHFFFAOYSA-N propan-2-olate;titanium(2+) Chemical compound CC(C)O[Ti]OC(C)C JTQPTNQXCUMDRK-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- UMBFGWVRZIHXCK-FDGPNNRMSA-L strontium;(z)-4-oxopent-2-en-2-olate Chemical compound [Sr+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O UMBFGWVRZIHXCK-FDGPNNRMSA-L 0.000 description 1
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 1
- YTBRWVXQNMQQTK-UHFFFAOYSA-N strontium;ethanolate Chemical compound CCO[Sr]OCC YTBRWVXQNMQQTK-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- IFNXAMCERSVZCV-UHFFFAOYSA-L zinc;2-ethylhexanoate Chemical compound [Zn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O IFNXAMCERSVZCV-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
- H02N2/186—Vibration harvesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/0005—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing non-specific motion; Details common to machines covered by H02N2/02 - H02N2/16
- H02N2/001—Driving devices, e.g. vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
- H10N30/2048—Membrane type having non-planar shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】第1電極60と、第1電極上に設けられた圧電体層70と、圧電体層上に設けられた第2電極80とを備えた圧電素子300において、圧電体層70は、ビスマス、バリウム、鉄、チタン及びストロンチウムを含むペロブスカイト構造を有する複合酸化物からなり、バリウムに対するストロンチウムの含有量は、5mol%以上18mol%以下である。
【選択図】図3
Description
図1は、本発明の実施形態1に係る圧電素子を具備する液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図であり、図3は図2のA−A′線断面図である。図1〜図3に示すように、本実施形態の流路形成基板10は、シリコン単結晶基板からなり、その一方の面には二酸化シリコンからなる弾性膜50が形成されている。
(0<x<0.40、0.05≦y≦0.18)
(Bi1−x(Ba1−ySry)x)(Fe1−xTix)O3 (1’)
(0<x<0.40、0.05≦y≦0.18)
なお、圧電体層70の厚さは限定されない。例えば、圧電体層70の厚さは3μm以下、好ましくは0.3μm〜1.5μmである。
まず、図4(a)に示すように、シリコンウェハーである流路形成基板用ウェハー110の表面に弾性膜50を構成する二酸化シリコン(SiO2)等からなる二酸化シリコン膜を熱酸化等で形成する。次いで、図4(b)に示すように、弾性膜50(二酸化シリコン膜)上に、酸化チタン等からなる密着層56を、スパッタリング法や熱酸化等で形成する。
次に、図7(c)に示すように、流路形成基板用ウェハー110の圧電素子300側に、シリコンウェハーであり複数の保護基板30となる保護基板用ウェハー130を接着剤35を介して接合した後に、流路形成基板用ウェハー110を所定の厚さに薄くする。
そして、図8(b)に示すように、流路形成基板用ウェハー110をマスク膜52を介してKOH等のアルカリ溶液を用いた異方性エッチング(ウェットエッチング)することにより、圧電素子300に対応する圧力発生室12、連通部13、インク供給路14及び連通路15等を形成する。
(実施例1)
まず、(110)に配向した単結晶シリコン(Si)基板の表面に熱酸化により膜厚1170nmの二酸化シリコン膜を形成した。次に、二酸化シリコン膜上にRFマグネトロンスパッター法により膜厚40nmのチタン膜を形成し、熱酸化することで酸化チタン膜(密着層56)を形成した。次に、酸化チタン膜上にRFマグネトロンスパッター法により膜厚100nmの白金膜(第1電極60)を形成した。
前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸ストロンチウム及び2−エチルヘキサン酸チタンのn−オクタン溶液を、Bi、Fe、Mn、Ba、Sr及びTiのmol比が、Bi:Fe:Mn:Ba:Sr:Ti=75.0:71.25:3.75:23.0:2.0:25.0となるように混合して調製した溶液を用いた以外は、実施例1と同様の操作を行った。これにより、Baに対するSrの含有量が8.70mol%である圧電体層70を具備する圧電素子300を得た。
前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸ストロンチウム及び2−エチルヘキサン酸チタンのn−オクタン溶液を、Bi、Fe、Mn、Ba、Sr及びTiのmol比が、Bi:Fe:Mn:Ba:Sr:Ti=75.0:71.25:3.75:22.5:2.5:25.0となるように混合して調製した溶液を用いた以外は、実施例1と同様の操作を行った。これにより、Baに対するSrの含有量が11.11mol%である圧電体層70を具備する圧電素子300を得た。
前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸ストロンチウム及び2−エチルヘキサン酸チタンのn−オクタン溶液を、Bi、Fe、Mn、Ba、Sr及びTiのmol比が、Bi:Fe:Mn:Ba:Sr:Ti=75.0:71.25:3.75:22.0:3.0:25.0となるように混合して調製した溶液を用いた以外は、実施例1と同様の操作を行った。これにより、Baに対するSrの含有量が13.63mol%である圧電体層70を具備する圧電素子300を得た。
前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸ストロンチウム及び2−エチルヘキサン酸チタンのn−オクタン溶液を、Bi、Fe、Mn、Ba、Sr及びTiのmol比が、Bi:Fe:Mn:Ba:Sr:Ti=75.0:71.25:3.75:21.25:3.75:25.0となるように混合して調製した溶液を用いた以外は、実施例1と同様の操作を行った。これにより、Baに対するSrの含有量が17.65mol%である圧電体層70を具備する圧電素子300を得た。
前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸バリウム及び2−エチルヘキサン酸チタンのn−オクタン溶液を、Bi、Fe、Mn、Ba及びTiのmol比が、Bi:Fe:Mn:Ba:Ti=75.0:71.25:3.75:25.0:25.0となるように混合して調製した溶液を用いた以外は、実施例1と同様の操作を行った。これにより、Srを含有しない圧電体層70を具備する圧電素子300を得た。
前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸ストロンチウム及び2−エチルヘキサン酸チタンのn−オクタン溶液を、Bi、Fe、Mn、Sr及びTiのmol比が、Bi:Fe:Mn:Sr:Ti=75.0:71.25:3.75:25.0:25.0となるように混合して調製した溶液を用いた以外は、実施例1と同様の操作を行った。これにより、Baを含有しない圧電体層70を具備する圧電素子300を得た。
実施例1〜5及び比較例1、2の圧電素子につき、アグザクト社製の変位測定装置(DBLI)を用い室温で、φ=500μmの電極パターンを使用し、周波数1kHzの電圧を印加して、電界誘起歪(変位量)−電圧の関係(バタフライカーブ)を求めた。これらのバタフライカーブから、到達歪から逆到達歪までの圧電体層の最大歪量をそれぞれ求めた。表1に実施例1〜5及び比較例1、2の最大歪量の測定結果をまとめて示す。また、図9に実施例3及び比較例1のバタフライカーブを示し、図10に実施例1〜5及び比較例1、2の最大歪量とSr含有量との関係を示す。また、図11に実施例1〜5及び比較例1の最大歪量とSr含有量との関係をより詳細に示す。
以上、本発明の液体噴射ヘッドの一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、上述した実施形態では、流路形成基板10として、シリコン単結晶基板を例示したが、特にこれに限定されず、例えば、SOI基板、ガラス等の材料を用いるようにしてもよい。
上述した実施形態のインクジェット式記録ヘッドは、インクカートリッジ等と連通するインク流路を具備する記録ヘッドユニットの一部を構成して、インクジェット式記録装置などの液体噴射装置に搭載される。図12は、そのインクジェット式記録装置の一例を示す概略図である。
また、本発明に係る圧電素子は、優れた変位特性を示すことから、インクジェット式記録ヘッドに代表される液体噴射ヘッドに限られず、液体噴射装置、超音波センサー、圧電モーター、超音波モーター、圧電トランス、振動式ダスト除去装置、圧力−電気変換機、超音波発信機、圧力センサー、加速度センサーなどに搭載して好適に用いることができる。
また、本発明に係る圧電素子は、良好なエネルギー電気変換能力を示すことから、発電装置に搭載して好適に用いることができる。発電装置としては、圧力電気変換効果を使用した発電装置、光による電子励起(光起電力)を使用した発電装置、熱による電子励起(熱起電力)を使用した発電装置、振動を利用した発電装置などが挙げられる。
Claims (6)
- 第1電極と、前記第1電極上に設けられた圧電体層と、前記圧電体層上に設けられた第2電極とを備えた圧電素子であって、
前記圧電体層は、ビスマス、バリウム、鉄、チタン及びストロンチウムを含むペロブスカイト構造を有する複合酸化物からなり、
前記バリウムに対する前記ストロンチウムの含有量は、5mol%以上18mol%以下であることを特徴とする圧電素子。 - 請求項1に記載する圧電素子を具備することを特徴とする液体噴射ヘッド。
- 請求項2に記載する液体噴射ヘッドと、記録媒体を搬送する搬送部と、前記液体噴射ヘッドから噴射される液体とを具備することを特徴とする液体噴射装置。
- 請求項1に記載する圧電素子と、前記圧電素子を駆動することによって生じる変位を外部に伝える振動部と、発生した圧力波を外部に伝える整合層とを具備することを特徴とする超音波センサー。
- 請求項1に記載する圧電素子と、前記圧電素子を配した振動体と、前記振動体と接触する移動体とを少なくとも具備することを特徴とする圧電モーター。
- 請求項1に記載する圧電素子と、前記圧電素子により生じた電荷を前記第1電極及び前記第2電極の少なくとも一方から取り出す取り出し電極とを具備することを特徴とする発電装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013238246A JP6268468B2 (ja) | 2013-11-18 | 2013-11-18 | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
US14/541,828 US9312791B2 (en) | 2013-11-18 | 2014-11-14 | Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic sensor, piezoelectric motor, and power generating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013238246A JP6268468B2 (ja) | 2013-11-18 | 2013-11-18 | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015099828A true JP2015099828A (ja) | 2015-05-28 |
JP6268468B2 JP6268468B2 (ja) | 2018-01-31 |
Family
ID=53172873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013238246A Active JP6268468B2 (ja) | 2013-11-18 | 2013-11-18 | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9312791B2 (ja) |
JP (1) | JP6268468B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108503348A (zh) * | 2017-02-27 | 2018-09-07 | Tdk株式会社 | 压电组合物以及压电元件 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6519735B2 (ja) * | 2014-03-24 | 2019-05-29 | セイコーエプソン株式会社 | 圧電素子及び圧電素子応用デバイス |
CN107530006A (zh) * | 2015-04-17 | 2018-01-02 | 太阳诱电株式会社 | 振动波形传感器和波形分析装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090230211A1 (en) * | 2008-03-12 | 2009-09-17 | Fujifilm Corporation | Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device |
US20100308692A1 (en) * | 2009-06-08 | 2010-12-09 | Fujifilm Corporation | Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus |
JP2011032111A (ja) * | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | セラミックス組成物およびその製造方法、圧電アクチュエーター、液体噴射ヘッドならびに液体噴射装置 |
WO2013062120A1 (en) * | 2011-10-26 | 2013-05-02 | Canon Kabushiki Kaisha | Piezoelectric material, piezoelectric element, and electronic apparatus |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4051654B2 (ja) | 2000-02-08 | 2008-02-27 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッド及びこれらの製造方法並びにインクジェットプリンタ |
JP4413568B2 (ja) * | 2003-09-19 | 2010-02-10 | パナソニック株式会社 | 超音波探触子 |
JP4498265B2 (ja) * | 2005-11-15 | 2010-07-07 | キヤノン株式会社 | モータ駆動装置、制御方法、及びプログラム |
JP5248168B2 (ja) | 2008-04-01 | 2013-07-31 | セイコーエプソン株式会社 | 圧電材料および圧電素子 |
JP5679694B2 (ja) | 2009-05-20 | 2015-03-04 | キヤノン株式会社 | 圧電材料 |
JP5681398B2 (ja) | 2009-07-09 | 2015-03-04 | 富士フイルム株式会社 | ペロブスカイト型酸化物、強誘電体組成物、圧電体、圧電素子、及び液体吐出装置 |
JP5616171B2 (ja) * | 2009-09-28 | 2014-10-29 | 富士フイルム株式会社 | 高分子複合圧電体及びそれを用いた圧電素子 |
JP5616126B2 (ja) * | 2010-05-27 | 2014-10-29 | 富士フイルム株式会社 | ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置 |
EP2463925B1 (en) * | 2010-12-10 | 2016-11-23 | Seiko Epson Corporation | Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, and piezoelectric ceramic |
-
2013
- 2013-11-18 JP JP2013238246A patent/JP6268468B2/ja active Active
-
2014
- 2014-11-14 US US14/541,828 patent/US9312791B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090230211A1 (en) * | 2008-03-12 | 2009-09-17 | Fujifilm Corporation | Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device |
JP2009242229A (ja) * | 2008-03-12 | 2009-10-22 | Fujifilm Corp | ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置 |
US20100308692A1 (en) * | 2009-06-08 | 2010-12-09 | Fujifilm Corporation | Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus |
EP2262020A2 (en) * | 2009-06-08 | 2010-12-15 | Fujifilm Corporation | Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus |
JP2011018896A (ja) * | 2009-06-08 | 2011-01-27 | Fujifilm Corp | 圧電素子及びそれを備えた圧電アクチュエータ、液体吐出装置、発電装置 |
JP2011032111A (ja) * | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | セラミックス組成物およびその製造方法、圧電アクチュエーター、液体噴射ヘッドならびに液体噴射装置 |
WO2013062120A1 (en) * | 2011-10-26 | 2013-05-02 | Canon Kabushiki Kaisha | Piezoelectric material, piezoelectric element, and electronic apparatus |
JP2013107813A (ja) * | 2011-10-26 | 2013-06-06 | Canon Inc | 圧電材料、圧電素子、および電子機器 |
US20140265729A1 (en) * | 2011-10-26 | 2014-09-18 | Canon Kabushiki Kaisha | Piezoelectric material, piezoelectric element, and electronic apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108503348A (zh) * | 2017-02-27 | 2018-09-07 | Tdk株式会社 | 压电组合物以及压电元件 |
JP2018142599A (ja) * | 2017-02-27 | 2018-09-13 | Tdk株式会社 | 圧電組成物及び圧電素子 |
Also Published As
Publication number | Publication date |
---|---|
JP6268468B2 (ja) | 2018-01-31 |
US20150138281A1 (en) | 2015-05-21 |
US9312791B2 (en) | 2016-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5834776B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス、並びにセンサー | |
JP5975210B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー並びに圧電素子の製造方法 | |
JP5915850B2 (ja) | 圧電素子の製造方法、液体噴射ヘッドの製造方法、液体噴射装置の製造方法、超音波デバイスの製造方法及びセンサーの製造方法 | |
JP6268468B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 | |
JP6372644B2 (ja) | 圧電素子、液体噴射ヘッド及びセンサー | |
JP5773129B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びirセンサー | |
JP6146599B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP5440795B2 (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP2013131572A (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
JP5790922B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP6057049B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP6015892B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP2012124354A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP2015128111A (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置及びセンサー | |
JP5915848B2 (ja) | 圧電素子の製造方法、液体噴射ヘッドの製造方法、液体噴射装置の製造方法、超音波デバイスの製造方法及びセンサーの製造方法 | |
JP6183600B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス、フィルター及びセンサー | |
JP2013098441A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP2013098442A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP5773127B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びirセンサー | |
JP2015061048A (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
JP2014194992A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP5765525B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びirセンサー | |
JP5892308B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP2013055276A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP2013052641A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150422 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170809 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170816 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170921 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6268468 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |